The generation of new nanoscale fabrication techniques is both novel and necessary for the generation of new devices and new materials. Graphene, a heavily studied and versatile material, provides new avenues to generate these techniques. Graphene’s 2-dimensional form remains both robust and uncommonly manipulable. In this project we show that graphene can be combined with the yeast cell, Saccharomyces cerevisiae, arguably the most studied and utilized organism on the planet, to generate these new techniques and devices. Graphene oxide will be used to encapsulate yeast cells and we report on the development of a method to electrically read the behaviour of these yeast cells. The advantage of an encapsulation process for a cell sensor is the ability to create a system that can electrically show both changes in ion flow into and out of the cell and mechanical changes in the cell surface. Since the graphene sheets are mechanically linked to the surface of the cell, stresses imparted to the sheets by changes in the cell wall or cell size would also be detectable. The development process for the encapsulation will be refined to eradicate excess gold on the yeast cells as well as to minimize the amount of stray, unattached graphene in the samples. The graphene oxide encapsulation process will also be shown to generate a robust substrate for material synthesis. With regards to cell sensing applications, sources of noise will be examined and refinements to the device setup and testing apparatus explored in order to magnify the relevant electrical signal. The spherical topography of an encapsulated yeast cell will be shown to be an advantageous substrate for material growth. Zinc oxide, as a sample material being investigated for its own applications for photovoltaics, will be grown on these substrates. The spherical nature of the encapsulated cell allows for radial material growth and a larger photo-active area resulting in a device with increased efficiency over a planar complement. The zinc oxide nanorods are grown via an electrochemical growth process which also reduces the graphene oxide sheets to electrochemically reduced graphene. XRD analysis confirms that the material synthesized is infact zinc oxide. The nanorods synthesized are 200nm to 400nm in width and 1µm in length. The increase efficiency of the non-planar device and the effectiveness of the encapsulated cell as a growth substrate indicate encapsulated cells as a research avenue with significant potential.

Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being pursued. Silicon nanoparticle films made from solution are a promising candidate for low-cost solar cells. However, controlling the properties of silicon nanoparticles is quite a challenge, in particular shape and size distribution, which effect device performance. At present, none of the solar cells made from silicon nanoparticle films have an efficiency exceeding the efficiency of those based on crystalline silicon. To address the challenge of controlling silicon nanoparticle properties, both theoretical and experimental investigations are needed. In this thesis, we investigate silicon nanoparticle properties via quantum mechanical modeling of silicon nanoparticles and synthesis of silicon nanoparticle films via colloidal grinding. Silicon nanoparticles with shapes including cubic, rectangular, ellipsoidal and flat disk are modeled using semi-empirical methods and configuration interaction. Their electronic properties with different surface passivation were also studied. The results showed that silicon nanoparticles with hydrogen passivation have higher HOMOLUMO gaps, and also the HOMO-LUMO gap depends on the size and the shape of the particle. In contrast, silicon nanoparticles with oxygen passivation have a lower HOMO-LUMO gap. Raman spectroscopy calculation of silicon nanoparticles show peak shift and asymmetric broadening similar to what has been observed in experiment. Silicon nanoparticle synthesis via colloidal grinding was demonstrated as a straightforward and inexpensive approach for thin film solar cells. Data analysis of silicon particles via SEM images demonstrated that colloidal grinding is effective in reducing the Si particle size to sub-micron in a short grinding time. Further increases in grinding time, followed by filtration demonstrated a narrowing of the Si particle size and size-distribution to an average size of 70 nm. Raman spectroscopy and EDS data demonstrated that the Si nanoparticles contain oxygen due to exposure to air during grinding. I-V characterization of the milled Si nanoparticles showed an ohmic behaviour with low current at low biases then Schottky diode behaviour or a symmetric curve at large biases. / Graduate / 0794 / 0544 / zahraalbu@hotmail.com

Uppsala kommun has acquired the land at Ulleråkerand the plan is that it should be the starting point forthe new southeast district. The area is supposed toinclude 8000 new homes. The idea is also that the areashould be a new modern energy-efficient district. Thisreport examines how much energy that could be savedby using a passive house integrated design instead oftodays standard. Simulations in Matlab regarding localenergy utilization has also been done. Calculationsshow that the passive house integrated designgenerates in a total energy saving of 49 per centcompared to the standard house. The local electricalproduction comes from solar cell panels placed on theroofs and facades and the installed power is 19.8 MW.The production covers 80.3 per cent of the totalenergy demand or 91.4 per cent of the electricaldemand per year. But the systems production ismismatched to the local demand for electricity.

Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being pursued. Silicon nanoparticle films made from solution are a promising candidate for low-cost solar cells. However, controlling the properties of silicon nanoparticles is quite a challenge, in particular shape and size distribution, which effect device performance. At present, none of the solar cells made from silicon nanoparticle films have an efficiency exceeding the efficiency of those based on crystalline silicon. To address the challenge of controlling silicon nanoparticle properties, both theoretical and experimental investigations are needed. In this thesis, we investigate silicon nanoparticle properties via quantum mechanical modeling of silicon nanoparticles and synthesis of silicon nanoparticle films via colloidal grinding. Silicon nanoparticles with shapes including cubic, rectangular, ellipsoidal and flat disk are modeled using semi-empirical methods and configuration interaction. Their electronic properties with different surface passivation were also studied. The results showed that silicon nanoparticles with hydrogen passivation have higher HOMOLUMO gaps, and also the HOMO-LUMO gap depends on the size and the shape of the particle. In contrast, silicon nanoparticles with oxygen passivation have a lower HOMO-LUMO gap. Raman spectroscopy calculation of silicon nanoparticles show peak shift and asymmetric broadening similar to what has been observed in experiment. Silicon nanoparticle synthesis via colloidal grinding was demonstrated as a straightforward and inexpensive approach for thin film solar cells. Data analysis of silicon particles via SEM images demonstrated that colloidal grinding is effective in reducing the Si particle size to sub-micron in a short grinding time. Further increases in grinding time, followed by filtration demonstrated a narrowing of the Si particle size and size-distribution to an average size of 70 nm. Raman spectroscopy and EDS data demonstrated that the Si nanoparticles contain oxygen due to exposure to air during grinding. I-V characterization of the milled Si nanoparticles showed an ohmic behaviour with low current at low biases then Schottky diode behaviour or a symmetric curve at large biases. / Graduate / 0794 / 0544 / zahraalbu@hotmail.com

The commercially available solar cells suffer from low conversion efficiency due to the thermalization and transmission losses arising from the mismatch between the band gap of the semiconductor materials and the solar spectrum. Advanced device architectures based on nanomaterial have been proposed and being successfully used to enhance the efficiency of the solar cells. Quantum dots (QDs) and nanowires (NWs) are the nanosclae structures that have been exploited for the development of the third generation solar cell devices and nanowire based solar cells, respectively. The optical and electrical properties of these materials can be tuned by their size and geometry; hence they have great potential for the production of highly efficient solar cell. Application of QDs and NWs with enhanced optoelectronic properties and development of low-cost fabrication processes render a new generation of economic highly efficient PV devices. The most significant contribution of this PhD study is the development of simple and cost effective methods for fabrication of nanowires and quantum dots for advanced solar cell architectures. In advanced silicon nanowires (SiNWs) array cell, SiNWs have been widely synthesised by the well-known vapor-liquid-solid method. Electron beam lithography and deep reactive ion etching have also been employed for fabrication of SiNWs. Due to the high price and complexity of these methods, simple and cost effective approaches are needed for the fabrication of SiNWs. In another approach, to enhance the cell efficiency, organic dyes and polymers have been widely used as luminescent centers and host mediums in the luminescent down shifting (LDS) layers. However, due to the narrow absorption band of the dyes and degradation of the polymers by moisture and heat, these materials are not promising candidates to use as LDS. Highly efficient luminescent materials and transparent host materials with stable mechanical properties are demanded for luminescent down shifting applications. In this project, simple fabrication processes were developed to produce SiNWs and QDs for application in advanced cell architectures. The SiNWs array were successfully fabricated, characterized and deployed in new cell architectures with radial p-n junction geometry. The luminescence down shifting of layers containing QDs in oxide and glass mediums was verified. The silica coated quantum dots which are suitable for luminescence down shifting, were also fabricated and characterized for deployment in new design architectures. Silicon nanowires were fabricated using two simplified methods. In the first approach, a maskless reactive ion etching process was developed to form upright ordered arrays of the SiNWs without relying on the complicated nano-scale lithography or masking methods. The fabricated structures were comprehensively characterized. Light trapping and photoluminescence properties of the medium were verified. In the second approach, combination of the nanosphere lithography and etching techniques were utilized for wire formation. This method provides a better control on the wire diameters and geometries in a very simple and cost effective way. The fabricated silicon nanowires were used for formation of the radial p-n junction array cells. The functionality of the new cell structures were confirmed through experimental and simulation results. Quantum dots are promising candidates as luminescent centers due to their tunable optical properties. Oxide/glass matrices are also preferred as the host medium for QDs because of their robust mechanical properties and their compatibility with standard silicon processing technology. Besides, the oxide layers are transparent mediums with good passivation and anti-reflection coating properties. They can also be used to encapsulate the cell. In this work, ordered arrays of QDs were incorporated in an oxide layer to form a luminescent down shifting layer. This design benefits from the enhanced absorption of a periodic QD structure in a transparent oxide. The down shifting properties of the layer after deployment on a crystalline silicon solar cell were examined. For this purpose, crystalline silicon solar cells were fabricated to use as test platform for down shifting. In order to examine the down-shifting effect, different approaches for formation of a luminescence down shifting layer were developed. The LDS layer consist of cadmium selenide- zinc sulfide (CdSe/ZnS) quantum dots in oxide and glass layers to act as luminescent centers and transparent host medium, respectively. The structural and optical properties of the fabricated layers were studied. The concept of spectral engineering was proved by the deployment of the layer on the solar cell. To further benefit from the LDS technique, quantum efficiency of the QDs and optical properties of the layer must be improved. Demand for the high quantum efficiency material with desired geometry leaded us to synthesis quantum dots coated with a layer of grown oxide. As the luminescence quantum efficiency of the QDs is correlated to the surface defects, one advantage of having oxide on the outer shell of the QDs, is to passivate the surface non-radiative recombination centers and produce QDs with high luminescent quantum yield. In addition, nanoparticles with desired size can be obtained only by changing the thickness of the oxide shell. This method also simplifies the fabrication of QD arrays for luminescence down shifting application, since it is easier to form ordered arrays from larger particles. QD superlattices in an oxide medium can be fabricated on a large area by a simple spin-coating or dip coating methods. The photonic crystal properties of the proposed structure can greatly increase the absorption in the QDs layer and enhance the effect of down shifting.

The objective of this thesis is to understand and improve optical and electrical confinement to achieve cost-effective high-efficiency thin p-type Si solar cells. Optical confinement is achieved by front surface texturing in conjunction with an internal reflective layer on the back surface. Electrical confinement is obtained through the use of a high-lifetime material coupled with high-quality passivation on both surfaces. This research is divided into five tasks. In the first task, Ga-doped Cz Si was investigated to achieve a high and stable lifetime. It was found that for 1 ohm-cm nominal-resistivity screen-printed Al-back surface filed (BSF) cells, the Ga-doped ingot gave ~1.5% higher absolute efficiency after light-soaking relative to the B-doped counterpart. The benefit of using Ga is therefore quite explicit. In the second task, the screen-printed Al-BSF was investigated to explore its potential and limitations for achieving high-efficiency cells. It was found that there exists a critical alloying temperature for a given Al-thickness, above which the Al-BSF becomes non-uniform and cell performance starts to degrade. This puts a limit on the quality of the Al-BSF that can be achieved. An alternative way of back passivation involving dielectric/metal layers was therefore explored. In Task three, two key requirements for achieving high-efficiency dielectric back-passivated cells were established through device modeling. These are (1) a formation of a high-quality BSF underneath the local back contact through vias in the dielectric and (2) a high-quality dielectric passivation with either a moderate positive charge density or a high negative charge density. Task four involved the development of a metallization technique through vias in the dielectric to achieve a high-quality contact and an efficient internal reflector in conjunction with a high-quality local BSF. Further, a novel dielectric system composed of a spin-on SiO<SUB>2</SUB> layer capped with SiN<SUB>x</SUB> was developed that exhibited excellent passivation and a moderate positive charge density. The final task involved fabrication and analysis of dielectric back-passivated cells. The new dielectric and process sequence developed in this thesis resulted in screen-printed solar cells with efficiency as high as 19% with the potential for 20% efficient cells on 100-µm thick Si substrates.

Silicon nanowires are a nanostructure consisting of elongated crystals of silicon. Like many nanostructures, silicon nanowires have properties that change with size. In particular, silicon nanowires have a band-gap that is tuneable with the diameter of the nanowire. They tend to absorb a large portion of the light incident upon them and they form a highly textured surface when grown on an otherwise flat substrate. These properties indicate silicon nanowires are good candidates for use in solar cells. Nanostructured silicon, in the form of nanocrystalline silicon, has been used to produce thin film solar cells. Solar cells produced using silicon nanowires could combine the properties of the silicon nanowires with the low material costs and good stability of nanocrystalline based solar cells. This thesis describes the process of optimisation of silicon nanowire growth on a plasma enhanced chemical vapour deposition system. This optimised growth of silicon nanowires is then used to demonstrate a prototype solar cell using silicon nanowires and amorphous silicon. Several steps had to be accomplished to reach this goal. The growth of silicon nanowires was optimised through a number of steps to produce a high density film covering a substrate. Developments were made to the standard deposition technique and it was found that by using pulsed plasma enhanced chemical vapour deposition the density of nanowire growth could be improved. Of a range of catalysts trialled, gold and tin were found to be the most effective catalysts for the growth of silicon nanowires. A range of substrates was investigated and the nanowires were found to grow with high density on transparent conductive oxide coated glass substrates, which would allow light to reach the nanowires when they were used as part of a solar cell. The silicon nanowires were combined with doped and intrinsic amorphous silicon layers with the aim to create thin film photovoltaic devices. Several device designs using silicon nanowires were investigated. The variant that showed the highest efficiency used doped silicon nanowires as a p-layer which was coated with intrinsic and n-type amorphous silicon. By the characterisation and optimisation of the silicon nanowires, a prototype silicon nanowire solar cell was produced. The analysis of these prototype thin film devices, and the nanowires themselves, indicated that silicon nanowires are a promising material for photovoltaic applications.

Polymer solar cells are promising in that they are inexpensive to produce, and due to their mechanical flexibility have the potential for use in applications not possible for more traditional types of solar cells. The performance of polymer solar cells depends strongly on the distribution of electron donor and acceptor material in the active layer. Understanding the connection between morphology and performance as well as how to control the morphology, is therefore of great importance. Furthermore, improving the lifetime of polymer solar cells has become at least as important as improving the efficiency.   In this thesis, the relation between morphology and solar cell performance is studied, and the material stability for blend films of the thiophene-quinoxaline copolymer TQ1 and the fullerene derivatives PCBM and PC70BM. Atomic force microscopy (AFM) and scanning transmission X-ray microscopy (STXM) are used to investigate the lateral morphology, secondary ion mass spectrometry (SIMS) to measure the vertical morphology and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to determine the surface composition. Lateral phase-separated domains are observed whose size is correlated to the solar cell performance, while the observed TQ1 surface enrichment does not affect the performance. Changes to the unoccupied molecular orbitals as a result of illumination in ambient air are observed by NEXAFS spectroscopy for PCBM, but not for TQ1. The NEXAFS spectrum of PCBM in a blend with TQ1 changes more than that of pristine PCBM. Solar cells in which the active layer has been illuminated in air prior to the deposition of the top electrode exhibit greatly reduced electrical performance. The valence band and absorption spectrum of TQ1 is affected by illumination in air, but the effects are not large enough to account for losses in solar cell performance, which are mainly attributed to PCBM degradation at the active layer surface. / The performance of polymer solar cells depends strongly on the distribution of electron donor and acceptor material in the active layer. Understanding the connection between morphology and performance as well as how to control the morphology, is therefore of great importance. Furthermore, improving the lifetime has become at least as important as improving the efficiency for polymer solar cells to become a viable technology.   In this work, the relation between morphology and solar cell performance is studied as well as the material stability for polymer:fullerene blend films. A combination of microscopic and spectroscopic methods is used to investigate the lateral and vertical morphology as well as the surface composition. Lateral phase-separated domains are observed whose size is correlated to the solar cell performance, while the observed surface enrichment of polymer does not affect the performance. Changes to the unoccupied molecular states as a result of illumination in ambient air are observed for the fullerene, but not for the polymer, and fullerenes in a blend change more than pristine fullerenes. Solar cells in which the active layer has been illuminated exhibit greatly reduced electrical performance, mainly attributed to fullerene degradation at the active layer surface. / <p>Paper 2 ingick som manuskript i avhandlingen. Nu publicerad. </p>

A l’échelle mondiale, la part des énergies renouvelables dans le mix énergétique est de plus en plus importante. Basées sur le principe de la photosynthèse, les cellules solaires à colorant sont une des technologies émergentes viables pour une intégration en bâtiment. Ces cellules hybrides utilisent un oxyde semi-conducteur inorganique dont la surface est recouverte d’un colorant organique. L’absorption de la lumière incidente par ce colorant va provoquer l’injection d’un électron de l’état photo-excité de la molécule dans la bande de conduction de l’oxyde. Un médiateur rédox présent dans l’électrolyte va venir régénérer le colorant oxydé et générer un courant sous illumination. Les colorants déjà décrits dans la littérature présentent déjà des rendements de conversion pouvant atteindre 14 % mais très peu de ces matériaux peuvent absorber jusque dans la gamme proche infrarouge (700-1000 nm). Pourtant l’absorption des photons de cette gamme spectrale pourrait mener à une plus grande densité de courant générée et à de meilleures performances globales. Dans ce contexte, ce travail présente une étude complète de nouveaux colorants absorbeurs panchromatiques capable de collecter des photons jusque dans la gamme proche infrarouge. Pour cela, l’approche « donneur-accepteur » a été utilisée afin d’obtenir les propriétés optoélectroniques désirées. Une première famille à base de dérivés du benzothiadiazole a été développée conduisant à de très bonnes propriétés d’absorption dans la gamme proche infrarouge (absorption jusqu’à 925 nm). Les propriétés optiques, électrochimiques et photovoltaïques de ces matériaux ont été étudiées afin de comprendre les limitations de ces matériaux pour une application en cellules solaires. Suite à cela, une nouvelle famille de colorant à base de dérivés de l’isoindigo a été synthétisée et étudiée par spectroscopie UV-Visible, électrochimie et simulation DFT. Ces composés absorbent fortement dans la gamme UV-visible et proche infrarouge jusqu’à 848 nm. Après avoir optimisé les conditions d’imprégnation et de formulation de l’électrolyte, nous avons atteint un rendement de conversion en dispositif de 5,76%. Des mesures photophysiques nous ont permis d’avoir une compréhension fine des facteurs limitant l’efficacité de conversion de ces colorants. Fort de ce constat, nous avons amélioré la structure d’une des molécules pour atteindre un rendement de 7,0 %. Nous avons aussi de manière prospective testé différents matériaux alternatifs au système TiO2/iode classiquement utilisé. / On a global scale, the share of renewable energies in the energy mix is constantly increasing. Based on the principle of photosynthesis, Dye-Sensitized Solar Cells are an emerging technology for Building Integration Photovoltaic (BIPV). These hybrid cells use an inorganic semiconductor oxide whose surface is covered with an organic dye. The absorption of the incident light by this dye will cause the injection of an electron from the photo-excited state of the molecule into the conduction band of the oxide. A redox mediator present in the electrolyte will regenerate the oxidized dye and generate a current under illumination. The dyes already described in the literature shows efficiencies reaching 14%. On the other hand, very few of these materials can absorb up to the near infrared range (NIR) (700-1000 nm). Thereby, the absorption of the NIR spectral range could lead to a greater photo-generated current density. In this context, this work presents a complete study of new panchromatic dyes extending into the near infrared range. For this study, the "donor-acceptor" approach was used to obtain the desired optoelectronic properties. A first family based on benzothiadiazole derivatives has been developed leading to very good absorption properties in the NIR region (absorption up to 925 nm). The optical, electrochemical and photovoltaic properties of these materials have been studied in order to understand the limitations for solar cell applications. Following this, a new dye family based on isoindigo derivatives was synthesized and studied by UV-Visible spectroscopy, electrochemistry and DFT simulation. These compounds strongly absorbs in the UV-visible and NIR spectral range up to 848 nm. The dyeing bath composition and the electrolyte formulation were optimized in order to obtain a device conversion efficiency of 5.76%. Photophysical measurements have allowed us to have a fine understanding of the limiting factors of these dyes. On the basis of this observation, we improved the structure of one of the dye and witg this new molecule we reached a power conversion efficiency of 7.0% with a UV-Visible and near infrared absorption for the solar cell. In the last part of this work we have also obtained preliminary results employing various alternative materials to the TiO2/iodine system.

Ce travail traite de la croissance épitaxiale et de la caractérisation d’hétérostructures àbase de multi-puits quantiques (MPQ) pour des applications dans le photovoltaïque. Leséchantillons ont été obtenus par la technique d’épitaxie en phase vapeur aux organométalliques(EPVOM) sur des substrats de saphir (0001). La caractérisation structurale etoptique est réalisée par diffraction de rayons X, microscopie électronique en transmission,spectroscopie de photoluminescence et de transmission. Pour étudier la présence de l’effetphotovoltaïque et pour estimer la performance électrique des échantillons, les MPQ ont étéintégrés dans la géométrie de cellules solaires en utilisant de la photolithographie, desattaques réactives ioniques assistées par plasma inductif et des métallisations pour contacterles parties dopées n et p.Nous avons étudié l’influence de différents designs des régions actives InGaN/GaN surles propriétés optiques et électriques des échantillons, c’est-à-dire le nombre de puitsquantiques InGaN, les épaisseurs des puits et des barrières et la composition en indium dansles puits. Deux mécanismes principaux doivent être pris en compte pour une optimisationefficace de composants photovoltaïques: l’absorption des photons et la collections desporteurs. Nous avons montré qu’une augmentation du nombre de MPQ, de leur épaisseur etde la composition d’In améliorait l’absorption, mais causait aussi des pertes dans l’efficacitéde collection du fait de l’augmentation de l’épaisseur de la couche active (champ électriqueplus faible), de la difficulté des porteurs pour s’échapper de puits plus profonds et derelaxation des contraintes (création de défauts structuraux). La décroissance de l’épaisseur desbarrières peut résoudre les deux premiers points, mais le problème de la relaxation de lacontrainte reste entier. Pour notre meilleur design, nous obtenons une efficacité de conversionde 2 % pour des couches 15×In0.18Ga0.82N/GaN qui ont une réponse spectrale qui s’étendjusqu’à 465 nm. / In this work we report on epitaxial growth and characterization of InGaN/GaN multiquantumwells (MQWs) heterostructures for application in photovoltaic devices. The sampleswere grown by metal-organic vapor phase epitaxy (MOVPE) on (0001) sapphire substrate.The structural and optical characterization is performed by X-ray diffraction, transmissionelectron microscopy, photoluminescence spectroscopy and transmission measurements. Toinvestigate the presence of photovoltaic effect and estimate the electrical performance of thesamples, they were processed into solar cells by means of the photolithography, inductivelycoupled plasma reactive-ion etching and metallization to manage n and p contacts.We studied the influence of different InGaN/GaN active region designs on thestructural, optical and electrical properties of the samples, i.e. number of InGaN quantumwells, QW and quantum barrier thicknesses and indium composition in the wells. Two mainmechanisms have to be taken into account for an efficient optimization of photovoltaicdevices: photon absorption and carrier collection. We showed that an increase of the MQWsnumber, their thickness and the In-content allows absorption improvement, but causes lossesin the carrier collection efficiency due to: the increase of the active region thickness (lowerelectric field), the difficulty of the carrier to escape from deeper QWs and the strain relaxation(structural defect creation). The decrease of the barrier thickness can solve the first two issues,but the problem with strain relaxation remains. In the best design, we report the value of2.00% of conversion efficiency for 15×In0.18Ga0.82N/GaN samples with spectral responseextending to 465 nm.