Die als Absorbermaterial für Dünnschichtsolarzellen geeigneten Verbindungshalbleiter Cu2ZnSnS4 (CZTS) und Cu2ZnSnS(4-x)Sex (x<3, CZTSSe) konnten erfolgreich durch Kombination der elektrochemischen Legierungsabscheidung und der anschließenden Sulfurisierung in H2S-haltiger Atmosphäre hergestellt werden. In früheren Arbeiten wurden die viel versprechenden Eigenschaften von CZTS und Cu2ZnSnSe4 (CZTSe), als In und Ga freie und damit kostengünstige Alternativen, bereits ausführlich vorgestellt. Im Rahmen dieser Arbeit konnte anhand von kristallographischen Ergebnissen sowie durch Untersuchungen der Bandlückenenergien bestätigt werden, dass die Kesterite CZTS (1,46eV) und CZTSSe (1,32eV) erfolgreich mittels einer nasschemischen Vorstufe herstellbar sind. Weiterhin wurde erstmalig der Zusammenhang unterschiedlicher Stöchiometrien anhand ermittelter Halbleitereigenschaften (Na, Eg, EFB) gezeigt. Auf diesen Ergebnissen basierend wurde eine optimale Zusammensetzung zur Herstellung funktionaler Absorberschichten bestimmt. Dennoch zeigt sich, dass die Prozessparameter der Gasphasen-Sulfurisierung entscheidend die Bildung homogener Schichten beeinflusst. Die beobachtete große Kristallverteilung und die dabei auftretenden lokalen Löcher setzten die Funktionalität der hergestellten Solar Zellen (Al/ZnO:Al/CdS/CZTS/Mo/Glas) deutlich herab. Trotz der geringen Wirkungsgrade konnte aus einer Reihe unterschiedlicher Absorbermaterialien eine optimale Stöchiometrie (~Cu2Zn1.1Sn0.9S4) ermittelt werden. Die elektrochemische Coabscheidung von Se (~Cu2Zn1.2Sn0.9Se0.3) und die dadurch erfolgte partielle Substitution von S durch Se bewirkte, verglichen zur CZTS Morphologie, eine kompaktere und geschlossene Schichtstruktur. Der Einfluss des Selenanteils wurde dabei anhand detaillierter kristallographischer Untersuchungen und einer reduzierten Bandlückenenergie (1,32eV) bestätigt. Obwohl deutlich reproduzierbare Diodeneigenschaften über große Flächen beobachtet wurden, konnten keine Verbesserung des Wirkungsgrads erzielt werden. Cu2ZnSn (CZT) und Cu2ZnSnSe0.3 (CZTSe) Precursorschichten wurden mittels eines neu entwickelten alkalischen sowie zyanidfreien Elektrolyten auf Mo beschichteten Glassubstraten abgeschieden. Dieser alkalische Elektrolyt zeigte eine hohe Langzeitstabilität und die bisher unbekannte Möglichkeit der Abscheidung hoher Zinnanteile bei niedrigen Temperaturen. Aufgrund detaillierter elektrochemischer Untersuchungen konnte ein fundamentales Verständnis hinsichtlich der Einflüsse unterschiedlicher Additive, Konzentrationen und Temperaturen erzielt werden. Diese Ergebnisse konnten zur Interpretation der beobachteten potentialabhängigen Legierungsbildung herangezogen werden. Im Rahmen eines wesentlich fundamentalen Ansatzes erfolgte weiterhin die Charakterisierung der Legierungsbildung, ausgehend von unterschiedlicher Metallgehalte im Elektrolyten, anhand eines kürzlich publizierten kinetischen Modells zur elektrochemischen Legierungsabscheidung. Basierend auf diesen Untersuchungen konnte das vorgestellte Badsystem aufgrund einer genauen Einstellbarkeit und Nachdosierung erfolgreich zur ternären Abscheidung von Precursorschichten verwendet werden. / Cu2ZnSnS4 (CZTS) and Cu2ZnSnS(4-x)Sex (x<0.3, CZTSSe) thin film solar cell absorber materials were successfully formed by combining a one step electrochemical precursor deposition followed by a vapour phase sulfurization process. CZTS and Cu2ZnSnSe4 (CZTSe) are known as promising candidates for thin film solar cell applications without using rare and thus expensive materials like In and Ga. This thesis confirmed by XRD and band gap energy data the potential to produce the kesterite type semiconductor materials CZTS (1,46eV) and CZTSSe (1,32eV) via a wet chemical precursor step. This paper presents for the first time the impact of different absorber compositions on semiconductor properties (NA, Eg, EFB) of the bulk material. Based on this data an optimum stoichiometry was identified to produce a functional absorber layer. However, sulfurization remained as the most critical process to achieve homogeneous thin films. In the most cases local pin holes and a large crystal size distribution diminished the conversion efficiency of produced solar cell samples (Al/ZnO:Al/CdS/CZTS/Mo/glass). Nevertheless an optimum performance was found for a slight excess of Zn (~Cu2Zn1.1Sn0.9S4). The electrochemical codeposition of Se (~Cu2Zn1.2Sn0.9Se0.3) at the precursor step enabled to do a partial substitution of S by Se which was identified to improve CZTS morphology into a homogeneous and dense layer. The expected impact of Se was also confirmed by detailed crystallographic and band gap energy (1.32eV) measurements. Although solar cell function was found for enlarged areas the low overall conversion efficiency could be not pushed to higher levels. Cu2ZnSn (CZT) and Cu2ZnSnSe0.3 (CZTSe) precursor layers were directly electrodeposited on Mo coated soda line glass substrates from a new developed alkaline cyanide free alloy bath system. The presented electrolyte showed high long term stability and an up to now unknown high rate of Sn codeposition at low electrolyte temperatures. Results of a detailed electrolyte characterization gave a fundamental understanding of additive, concentration and temperature effects. This knowledge was successfully linked to explain the potential depended alloy composition effects. As a more fundamental approach a new kinetic model of the electrochemical alloy deposition was used to characterize the impact of changed electrolyte metal contents on the resulting alloy composition. Based on this data the presented alloy bath system was successfully applied for precise adjustment and replenishment during the ternary precursor deposition.

Silicon technologyhas been seekingfor a monolithic solution for a chip where data processing and data communication is performed in the CMOS part and the photonic component, respectively. Traditionally, silicon has been widely considered for electronic applications but not for photonic applications due to its indirect bandgap nature. However, band structure engineering and manipulation through alloying Si with Ge and Sn has opened new possibilities. Theoretical calculations show that it is possible to achieve direct transitions from Ge ifit is alloyed with Sn. Therefore, a GeSn system is a choice to get a direct bandgap. Extending to ternary GeSnSi and quaternary GeSnSiCstructures grown on Si wafers not only makes the bandgap engineering possible but also allowsgrowing lattice matched systems with different strain and bandgaps located in the infrared region. Different heterostructures can be designed and fabricated for detecting lightas photonic sensing oremitting the light as lasers. Alloying not only makes engineering possible but it also induces strain which plays an important role for electronic applications. Theoretical and experimental works show that tensile strain could increase the mobility, which is promising for electronic devices where high mobility channels for high performance MOSFETs is needed to speed up the switching rate. On the other hand, high n-doping in tensile strains in p-i-n structures makesΓ band transitions most probable which is promising for detection and emission of the light. As another benefit of tensile strain, the direct bandgap part shrinks faster than the indirect one if the strain amount is increased. To get both electronic and photonic applications of GeSn-based structures, two heterostructures (Ge/GeSn(Si)/GeSi/Ge/Si and Ge/GeSn/Si systems), including relaxed and compressive strained layers used to produce tensile strained layers, were designed in this thesis. The low temperature growth is of key importance in this work because the synthesis of GeSn-based hetrostructures on Si wafers requires low thermal conditions due tothe large lattice mismatch which makes them metastable. RPCVD was used to synthesize theseheterostructures because not only it offers a low temperature growth but also because it is compatible with CMOS technology. For utilization of these structures in devices, n-type and p-type doping of relaxed and compressive strained layers were developed. HRRLMs, HRTEM, RBS, SIMS, and FPP techniques were employed to evaluatestrain, quality, Sn content and composition profile of the heterostructures. The application of GeSn-based heterostructures is not restricted to electronics and photonics. Another application investigated in this work is photovoltaics. In competition with Si-based solar cells, which have, or areexpected to have,high stability and efficiency, thirdgeneration solar cells offer the use of low cost materials and production and can therefore be an alternative for future light energy conversion technology. Particularly, quantum dot sensitized solar cells are associated with favorable properties such as high extrinsic coefficients, size dependent bandgaps and multiple exciton generation and with a theoretical efficiencyof 44%. In this work, two categories of QDs, Cd-free and Cd-based QDs were employed as sensitizers in quantum dot sensitized solar cells (QDSSCs). Cd-based QDs have attracted large interest due to high quantum yield,however, toxicityremains still totheir disadvantage. Mn doping as a bandgap engineering tool for Cd-based type IIZnSe/CdS QDs wasemployed to boostthe solar cell efficiency. Theoretical and experimental investigations show that compared to single coreQDSSCs,typeII core-shells offer higher electron-hole separation due to efficient band alignment where the photogenerated electrons and holes are located in the conduction band of the shell and valence band of the core, respectively. This electron-hole separation suppresses recombination and by carefully designing the band alignment in the deviceit can increase the electron injection and consequently the power conversion efficiency of the device. Considering eco-friendly and commercialization aspects, three different “green” colloidal nanostructures having special band alignments, which are compatible for sensitized solar cells, were designed and fabricated by the hot injection method. Cu2GeS3-InP QDs not only can harvest light energy up to the infraredregion but can also be usedastypeII QDs. ZnS-coating was employed as a strategy to passivate the surface of InP QDs from interaction with air and electrolyte. In addition, ZnS-coating and hybrid passivation was applied for CuInS2QDs to eliminate surface traps. / <p>QC 20151125</p>

In der vorliegenden Arbeit wurden Thiophenoligomere nach dem Konzept Akzeptor – Donator – Akzeptor (A-D-A) und Donator – Akzeptor – Donator (D-A-D) synthetisiert und umfassend charakterisiert. Oligothiophene unterschiedlicher Kettenlänge stellen dabei den Donatoranteil des Moleküls dar, während 2,2-Dicyanovinyle (DCV), 1,3,2-2H-Dioxaborine (DOB), 2,1,3-Benzothiadiazole (BTDA) die Akzeptorstruktur im Molekül repräsentieren. Diese Materialien sollen als Absorber in der intrinsischen Schicht von organischen Solarzellen (OSC) eingesetzt werden. Zusätzliche Untersuchungen an DOB-substituierten Fluorenen, die als Elektronentransportmaterialien in der n-Schicht von OSC Anwendung finden sollten, erwiesen sich in diesem Fall nicht als vielversprechend. Alle untersuchten Verbindungen wurden, abhängig von ihrer Löslichkeit bzw. Verdampfbarkeit im Vakuum, durch Absorption in Lösung und im dünnen Film, durch Cyclovoltammetrie (CV) und durch DFT-Rechnung charakterisiert. Die thermische Stabilität wurde durch TG/DTA-Messungen untersucht. Die Ladungsträgerbeweglichkeit der DCV-Verbindungen wurde in organischen Feldeffekttransistoren untersucht, sowie Solarzellen mit verschiedenen Schichtdicken der Quinquethiophenverbindung DCV2-5T als Donatormaterial der intrinsischen Schicht angefertigt. Eine gezielte Modifikation der Verbindungen durch Wahl des Akzeptors und die Länge des aromatischen Systems ermöglichte die Synthese von Molekülen mit abstimmbaren Eigenschaften. Eine bathochrome Verschiebung des Absorptionsmaximums kann durch eine Vergrößerung des π-Systems erreicht werden. CV-Messungen und DFT-Rechnungen zeigen, dass E(LUMO) maßgeblich vom Akzeptor bestimmt wird, während E(HOMO) mehr durch den Donatorteil des Moleküls beeinflusst wird. Diese Eigenschaften sind unabhängig vom Aufbau (A-D-A oder D-A-D) der Verbindungen. Bezüglich der thermischen Stabilität sind die D-A-D – Verbindungen gegenüber den A-D-A – Verbindungen zu favorisieren. Ein weiterer wichtiger Schlüsselpunkt der Arbeit ist die Erkenntnis, dass die bisher verwendeten Alkylketten am Rückgrat des Oligothiophens die Löcherbeweglichkeit der Verbindungen stark herabsetzen. Zwei Solarzellen in einer m-i-p– Anordnung (Metall – intrinsisch – p-dotiert) erreichen mit dem DCV2-5T (Schichtdicke 6 bzw. 10 nm) als Donatormaterial eine Effizienz von 2.8 %. Die Zellen zeichnen sich durch einen hohen Füllfaktor (bis zu 58 %) aus und erreichen eine Leerlaufspannung von bis zu 1.03 V. Die Interpretation der J-V-Kennlinien führt zu der Annahme, dass die Exzitonendiffusionslänge kürzer als 10 nm ist, weswegen es bei einer höheren Schichtdicke des Thiophens zu einer Rekombination der erzeugten Exzitonen kommt. / The present thesis deals with thiophene oligomers according to the concept acceptor-donor-acceptor (A-D-A) or donor-acceptor-donor (D-A-D). Thiophenes represent the donor-part of the molecule whereas the acceptor-part can either be 2,2-dicyanovinyle (DCV), 1,3,2-2H-dioxaborine (DOB) or 2,1,3-benzothiadiazole (BTDA). These materials are supposed to work as absorbers in the intrinsic layer of an organic small molecular solar cell (OSC). Additional studies on substituted fluorenes, however, known to work as electron transport material in the n-layer of OSC, have not proved promising in this case. Depending on their solubility in organic solvents or their suitability for vacuum sublimation, all compounds were characterised by absorption measurements in solution and thin film, cyclic voltammetry (CV) and DFT-calculations. The thermal stability was determined by thermal analysis. Charge carrier mobility measurements using organic field effect transistors were applied to investigate the DCV-compounds. The quinquethiophene DCV2-5T was used in varying thicknesses as a donor material in the intrinsic absorbing layer of an OSC. Systematic variation of the compounds by applying different accepting groups and/or modifying the lengths of the aromatic systems permitted the synthesis of molecules with tunable properties. A bathochromic shift of the absorption maximum can be achieved by increasing the number of thiophene units. CV measurements and DFT calculations reveal a dependency of E(LUMO) on the accepting group whereas E(HOMO) is more influenced by the donor part of the molecule. These properties are independent from the concept A-D-A or D-A-D. Concerning thermal stability, D-A-D compounds seem to be more stable than A-D-A materials. Another important point is the knowledge that alkyl chains used so far at the backbone of the oligothiophene chain significantly decrease the hole mobility. Two OSCs arranged in an m-i-p-stack (metal – intrinsic – p-doped) with the quinquethiophene DCV2-5T (layer thickness 6 and 10 nm) both reach an efficiency of 2.8 %. They show a high fillfactor (up to 58 %) and reach an open circuit voltage of 1.03 V. Interpretation of the other parameters leads to the assumption that the exciton diffusion length of the molecule is shorter than 10 nm. This results in a recombination of the excitons in the cell with the thicker layer of DCV2-5T.

Etwa die Hälfte aller Solarzellen weltweit wird aus blockerstarrtem Silizium hergestellt. Derartige Blöcke weisen in ihren Außenbereichen eine verringerte Diffusionslänge der Minoritätsladungsträger auf. Um die Ursache dafür im Fall des bodennahen Bereichs zu bestimmen wurden zwei Spezialblöcke (ein Block mit reduzierter Bor-Dotierung und ein Block mit Phosphor-Dotierung) - u. a. mittels DLTS und FTIR - auf Kristalldefekte untersucht. Zusätzlich zu Dotierelementen (B, P, Al, As) wurden im Bodenbereich folgende Defekte nachgewiesen: <u>Metalle</u>: Fe, Cr <u>Sauerstoffhaltige Defekte</u>: Interstitieller Sauerstoff, Thermische Donatoren (TD), O1, O2 <u>Stickstoffhaltige Defekte</u>: NN-Paar, NNO-Komplex, Shallow Thermal Donors (STD) <u>Ausgedehnte Defekte</u>: Versetzungen, Ausscheidungen, Korngrenzen. Die Verteilung der flachen Donatoren (P, TD, STD, As) und Akzeptoren (B, Al) bestimmt den Widerstandsverlauf im bodennahen Bereich des Phosphor dotierten Spezialblocks. Das dortige Diffusionslängenprofil kann im Rahmen der Shockley-Read-Hall-Statistik erst durch eine Erhöhung des Minoritätseinfangquerschnitts für das Cr-Niveau (Faktor 5) bzw. für das STD-Niveau (Faktor 10) nachgezeichnet werden. Eisen, Versetzungen und Korngrenzen haben hier keinen wesentlichen Einfluss. In den untersten Millimetern des Spezialblocks müssen weitere Defekte hinzukommen, die die Diffusionslänge zusätzlich reduzieren; Thermische Donatoren und O1 und eventuell Ausscheidungen kommen dazu in Frage. Die sinngemäße Übertragung der Konzentrationsverläufe aus den beiden Spezialblöcken auf einen Block mit einer produktionsüblichen Dotierung ([B]≈10^{<small>16</small>}/cm^{<small>3</small>}) ergibt, dass in diesem Fall verschiedene Defekte (TD, STD, CrB und FeB) einen Beitrag zur Diffusionslängenreduktion im bodennahen Blockbereich liefern.

This thesis presents a mathematical model of the nanoporous anode within a dyesensitised solar cell (DSC). The main purpose of this work is to investigate interfacial charge transfer and charge transport within the porous anode of the DSC under both illuminated and non-illuminated conditions. Within the porous anode we consider many of the charge transfer reactions associated with the electrolyte species, adsorbed dye molecules and semiconductor electrons at the semiconductor-dye- electrolyte interface. Each reaction at this interface is modelled explicitly via an electrochemical equation, resulting in an interfacial model that consists of a coupled system of non-linear algebraic equations. We develop a general model framework for charge transfer at the semiconductor-dye-electrolyte interface and simplify this framework to produce a model based on the available interfacial kinetic data. We account for the charge transport mechanisms within the porous semiconductor and the electrolyte filled pores that constitute the anode of the DSC, through a one- dimensional model developed under steady-state conditions. The governing transport equations account for the diffusion and migration of charge species within the porous anode. The transport model consists of a coupled system of non-linear differential equations, and is coupled to the interfacial model via reaction terms within the mass-flux balance equations. An equivalent circuit model is developed to account for those components of the DSC not explicitly included in the mathematical model of the anode. To obtain solutions for our DSC mathematical model we develop code in FORTRAN for the numerical simulation of the governing equations. We additionally employ regular perturbation analysis to obtain analytic approximations to the solutions of the interfacial charge transfer model. These approximations facilitate a reduction in computation time for the coupled mathematical model with no significant loss of accuracy. To obtain predictions of the current generated by the cell we source kinetic and transport parameter values from the literature and from experimental measurements associated with the DSC commissioned for this study. The model solutions we obtain with these values correspond very favourably with experimental data measured from standard DSC configurations consisting of titanium dioxide porous films with iodide/triiodide redox couples within the electrolyte. The mathematical model within this thesis enables thorough investigation of the interfacial reactions and charge transport within the DSC.We investigate the effects of modified cell configurations on the efficiency of the cell by varying associated parameter values in our model. We find, given our model and the DSC configuration investigated, that the efficiency of the DSC is improved with increasing electron diffusion, decreasing internal resistances and with decreasing dark current. We conclude that transport within the electrolyte, as described by the model, appears to have no limiting effect on the current predicted by the model until large positive voltages. Additionally, we observe that the ultrafast injection from the excited dye molecules limits the interfacial reactions that affect the DSC current.

This work investigates the correlation of structural and photovoltaic properties of dyes used in dye-sensitized solar cells. Experimental methods, including ultraviolet-visible spectroscopy, fluorescence spectroscopy, cyclic voltammetry and electrochemical impedance spectroscopy are employed to study optical and electrochemical properties of dye molecules. Computational methods, including density functional theory and time-dependent density functional theory, are used to validate and predict the optical and electronic properties of dye molecules, in their isolated state and once embedded into a working electrode device environment that comprises a dye...TiO2 interface. The results chapters begin with the presentation of a series of quinodimethene dyes that are experimentally validated for their photovoltaic application, and associated computational studies reveal that an inner structural factor - a phenyl ring rotation occurring during the optical excitation process - leads to the competitive photovoltaic device performance of these dyes. Carbazole-based dyes are then systematically studied by computation, especially considering charge transfer paths and binding modes of these dyes on a titania surface. The theoretical models for the basic building block of this chemical family of dyes, known as MK-44, successfully support and explain structural discoveries from X-ray diffraction and reflectometry that impact of their function. A benzothiadiazole-based dye, RK-1, is then systematically studied by both experimental and computational methods, and the results show that the π-bridge composed of thiophene, benzothiadiazole and benzene rings leads to excellent charge separation; and the rotation of these rings during the optical excitation process may well be consistent with the fluorescence spectrum. Finally, the well-known ruthenium-based dyes are theoretically studied to determine the properties of different ligands connected to the metal core of the complex. Conformations with different NCS ligands are calculated in terms of energy and explain well the corresponding results from X-ray diffraction. Acid-base properties of carboxyl groups connected to pyridine ligands in N3 and N749 are theoretically calculated based on thermodynamics and density functional theory. Implicit and explicit models are both adopted to predict these acid dissociative constant values, which are generally in a good agreement with the reported experimental data. The thesis concludes with conclusions and a future outlook.

Les travaux de cette thèse sont en rapport avec la caractérisation de cellules solaires organiques et se déclinent suivant 3 axes :- Dans le cadre du projet IMPCELPHOTOR, nous avons développé un banc de caractérisation LBIC/LBIV permettant de cartographier des dispositifs OPV afin de visualiser et d’identifier les défauts de fonctionnement.- Dans le cadre du projet Européen SPrinTronics, nous avons travaillé sur l’amélioration des électrodes. Pour l’électrode collectrice d’électrons, nous avons sélectionné, testé et validé des encres métalliques à base de nanoparticules d’argent compatibles avec l’impression jet d’encre et permettant de réaliser des dispositifs OPV fonctionnels. Pour l’électrode collectrice de trous, nous avons testé des encres à base de nanofils d’argent et de nanotubes de carbone afin de remplacer l’ITO. Des résultats satisfaisants ont été obtenus avec une encre à base de nanofils d’argent. Cette dernière permet de réaliser des cellules semi-transparentes fonctionnelles sur verre et sur plastique. - Un travail sur l’aspect couleur d’un dispositif OPV a été mené au sein du projet PHASME. Nous avons mis en œuvre différentes techniques afin de modifier la couleur d’un dispositif OPV sans détruire ses performances photovoltaïques, le but étant de réaliser des modules polychromes. Nous avons développé simultanément un logiciel de colorimétrie permettant de contrôler et de prévoir le rendu de couleur dû à l’ajout de filtre coloré sur le dispositif OPV. / The work of this thesis is related to the characterization of organic solar cells and is structured in three independant parts :- Within the IMPCELPHOTOR project, we developed an experimental bench based on LBIC/ LBIV mapping, in order to visualize and identify defects within OPV device and modules.- Within the European SPrinTronics project, we worked on the improvement of OPV electrodes. For the top electrode, we selected, tested, and validated metallic inks based on silver nanoparticles compatible with inkjet printing. For the bottom electrode, we tested silver nanowires and carbon nanotubes inks to replace ITO. Satisfactory results have been obtained with an ink based on silver nanowires, which allowed us to obtain functional semi-transparent cells on glass and plastic.- Within the PHASME project, we worked on the visual aspect of a coloured OPV device. We implemented various strategies to change the color of an OPV device without altering its photovoltaic performance, the aim being to achieve full color modules. Simultaneously, we developed a colorimetric software to control and predict the color rendering on the final device (OPV plus filter).

Broadening the spectrum available to solar cells towards infrared wavelengths is one way to increase efficiency of organic solar devices. This thesis explores the possibilities of these organic heterojunction devices and two different material classes in thin films and organic solar devices: tin phthalocyanines (SnPcs) and aza-bodipys. To estimate the efficiency reachable under sunlight, model calculations are done for single and tandem cells. These calculations include a distinction between the optical gap and the electrical gap and the splitting of the quasi-Fermi levels. With a number of assumptions, e.g. a fill factor (FF) and an external quantum efficiency (EQE) within the absorption range of 65%, the resulting efficiencies are 15% in a single cell and of 21% in a tandem cell. Halogenation is known to lower the energy levels of molecules without chang-ing the optical band gap. Three different fluorinated and chlorinated SnPcs are investigated and compared to the neat SnPc. While chlorination of SnPc worsens the transport properties of the active layer leading to a lowered FF, the fluorina-tion of SnPc results in the intended increase in VOC and, consequently, efficiency for planar heterojunctions. In bulk heterojunction, however, fluorination does not change the efficiency probably due to the unstably bound fluorine. One method to modify the ionization potential (IP) and the absorption of the second material class, the aza-bodipys, is the annulation of the benzene ring. The energy levels determined by CV and UPS measurement and DFT-calculation show very good agreement and can be linked to a decrease in VOC: The Ph4-bodipy (not benzannulated) device has an efficiency of 1.2% with an EQE reaching up to 800nm and a VOC of almost 1V. The Ph2-benz-bodipy device shows a Voc of 0.65V and an efficiency of 1.1%, the EQE reaching up to 860nm. The variation of the molecule’s end groups to vary their IP is successfully employed for three different benz-bodipys: The variation results in a decrease of the optical gap from 1.5eV for the phenyl group, to 1.4eV for the MeO group, and 1.3eV for the thiophene group with the effective gap and the VOC following this trend. Efficiencies of 1.1% and 0.6% in combination with C60 can be reached in mip-type devices. Ph2-benz-bodipy is then optimized into a single cell with an efficiency of 2.9%. In a tandem cell with DCV6T-Bu4:C60, a Voc of 1.7V, a FF of 57% and an efficiency of 5% is reached. / Die Erweiterung des verfügbaren Spektrums in den Infrarotbereich ist eine Möglichkeit, die Effizienz organischer Solarzellen zu erhöhen. Diese Arbeit erkundet das Potential dieser Heteroübergänge und zwei Materialklassen in dünnen Schichten und Bauelementen: Zinnphthalozyanine (SnPc) und aza-Bodipys. Um die potentielle Effizienz abzuschäötzen, werden Modellberechnungen für Einzel- und Tandemzellen durchgeführt, unter Berücksichtigung des Unterschieds von optischer und elektrischer Bandlücke und der Quasiferminiveauaufspaltung. Mithilfe einiger Annahmen (z.B. Füllfaktor (FF) und externe Quanteneffizienz (EQE) gleich 65%) lässt sich die Einzelzelleffizienz auf 15%, die Tandemzelleffizienz auf 21% abschätzen. Halogenierung kann die Energieniveaus organischer Moleküle herabsetzen, ohne die optische Bandlücke zu verändern. Drei verschiedene chlorierte und fluorierte SnPcs werden mit dem reinen SnPc verglichen. Während die Chlorierung die Transporteigenschaften der aktiven Schicht und den FF verschlechtern, erhöht die Fluorierung wie erwartet Leerlaufspannung (VOC) und Effizienz im flachen Übergang, nicht jedoch in der Mischschicht, vermutlich aufgrund des nicht stabil gebundenen Fluors. Ein Weg, Ionisationspotential (IP) und Absorption der aza-Bodipy zu verändern, ist die Anelierung des Benzenrings. Die durch CV und UPS ermittelten und mittels DFT errechneten Energieniveaus stimmen gut überein und führen zu einer Verringerung der VOC: Die Zelle mit nichtaniliertem Ph4-bodipy zeigt eine Effizienz von 1.2%; das EQE reicht bis 800nm, die VOC beträgt fast 1V. Die Ph2-benz-bodipy-Zelle zeigt eine VOC von 0.65V und eine Effizienz von 1.1%, das EQE reicht bis 860nm. Der Austausch der Endgruppen zur Vergrößerung des IP, erfolgreich angewandt auf drei Benz-Bodipy-Verbindungen, führt zu einer Verringerung der optischen Bandlücke: von 1.5eV (Phenyl) über 1.4eV (MeO) zu 1.3eV (Thiophen); effektive Bandlücke und Voc folgen diesem Trend. Effizienzen von 1.1% und 0.6% in Kombination mit C60 werden in mip-Zellen erreicht. Ph2-benz-bodipy zeigt in einer optimierten nip-Zelle sogar eine Effizienz von 2.9%. Eine Tandemzelle mit DCV6T-Bu4:C60 zeigt eine Voc von 1.7V, einen FF von 57% und eine Effizienz von 5%.

Semiconductors such as CuInGaSe2 and CdTe have been investigated as absorber layer materials for thin film solar cells since their band gap matches with the solar spectrum. Films as thin as 2m are sufficient for the absorption of the visible part of solar radiation, because they are characterized by a high absorption coefficient. However, the scarcity and high costs of Indium, Gallium and Tellurium have led to concerns on the sustainability of these technologies. The semiconductor Cu2ZnSnS4 (Copper Zinc Tin Sulphide) consisting of abundantly available elements promises to be an excellent photovoltaic absorber material. The present study is focused on the growth and characterization of CZTS/ZnS thin film heterostructure suitable for PV applications. Ultrasonic Spray Pyrolysis (USP), a variation of Spray Pyrolysis is a thin film deposition technique where the solution to be sprayed is atomized by ultrasonic frequencies. The details of the USP experimental set up and the deposition principle are presented in the thesis. The active layers of the solar cell, viz. the CZTS absorber layer and ZnS emitter layer were grown by this technique. The metal top contact was deposited using e-beam evaporation. The effects of copper concentration and sodium diffusion on the Cu2ZnSnS4 film properties were investigated. The films have shown preferred orientation along (112) direction confirming kesterite structure. The optical studies revealed that a reduction of copper in the films will bring the band gap energy to 1.5eV, which will match with the solar spectrum. Sodium diffusion in the CZTS films is found to passivate the grain boundaries and enhance the electrical conductivity. These properties render CZTS films as good photovoltaic absorber layers. ZnS has a high band gap and is non toxic unlike CdS. The influences of variation in substrate temperature and spray duration on the ZnS film properties were examined. The optical studies conducted on ZnS films revealed that they are highly transparent in the visible region of the solar spectrum. The films were found to possess a band gap of 3.5 eV. These properties make them potential candidates as solar cell emitter layers. The CZTS/ZnS heterojunction solar cell was fabricated and subjected to electrical characterization in dark and illuminated conditions. A conversion efficiency of 1.16% was achieved for the device.

The master’s thesis deals with the noise diagnostic in the solar cells. Describes the main kinds of noises. The samples were quality and reliability screened using noise reliability indicators. The samples were surveyed by measuring the I-V characteristics, the noise spectral density as a function of forward voltage and frequency. It was calculated the noise spectral density as a function of forward current.