Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is illustrated. The V-pits were sampled using Atomic Force Microscopy and Scanning Electron Microscopy to examine their variation from the theoretical geometry shape. We discovered that the size of the V-pit opening in linearly graded InGaN, with and without GaN cap layer, has a Gaussian distribution. As such, we deduce that the V-pits are produced at different rates, as the growth of the InGaN layer progresses. In Stage I, the V-pits form at a slow rate at the beginning and then accelerate in Stage II when a critical thickness is reached before decelerating in Stage III after arriving at a mean size. It is possible to fill the V-pits by growing a GaN cap layer. It turns out that the filling of the V-pits is more effective at lower growth temperature of the GaN cap layer and the size of the V-pits opening, which is continued in to GaN cap layer, is not dependent on the GaN cap layer thickness. Furthermore, graded InGaN/GaN layers display better strain relaxation as compared to conventionally grown bulk GaN. By employing a specially design configuration, the V-pits can be eliminated from the InGaN epilayer. / Singapore-MIT Alliance (SMA)

Flowcytometric technology has been widely used for measurement of the absolute numbers of T-lymphocytes subsets in Human Immunodeficiency virus (HIV), defining the disease state, monitoring antiviral treatment, and identifying any risk for opportunistic infections. A manual preparing of the samples is required. More recently an automated and enclosed blood cell counting, Celldyn Sapphire has been introduced. In this study the performance of the Flow cytometer EPICS XL as a reference method for analysis of CD3+, CD4+ and CD8 T-lymphocytes was evaluated with blood from 40 individual’s samples. EPICS XL was also compared with Celldyn Sapphire in the analysis of T-lymphocyte subsets in 39 blood samples from patients with low, high and normal lymphocyte counts. The result showed that the precision was high for both EPICS XL (2.5%) and Celldyn (10%). The method was linear over a wide range. Comparisons of CD3+, CD4+, and CD8+ T-lymphocytes analysis showed high coefficients of correlation (r0.9) and agreement (y>0.9x) between two instruments. A lower degree of agreement was observed at low concentration of CD3+ and CD4+ T-lymphocytes (0.757, 0.739). This means that cell counts obtained by Celldyn were 30% lower than those obtained with EPICS XL. This study shows that both EPICS XL and Celldyn Sapphire were suitable for CD4+ and CD8+ T cell counts. It is however preferable to use Flowcytometry for counting of low concentration of CD4+ T-lymphocytes (<200 cells/µL).

African-Americans have been portrayed in stereotypical entertainment roles since their arrival into American society. Before film and television were developed, minstrel and side-shows were the source of entertainment at African-American’s expense. Minstrel shows were performed by White individuals dressed to impersonate Blacks and behaved in a White inter-pretation of Black behavior (Pieterse, 1992, pg. 134). African American women in particular were portrayed in three primary stereotypical ways: the Mammy, the Jezebel, and the Sap-phire. This research examines the relationship between the stereotypes and these historical typecasts of African-American women are relevant to Black director Tyler Perry’s popular character Mabel Simmons, better known as ‘Madea’.

In this thesis, we study a series of Si doped InN films. These samples are grown on sapphire (0001) by molecular beam epitaxy (MBE). We have doped Si in InN films successfully. In this experiment, we control Si cell temperature to change carrier concentration of samples during InN film growth. The carrier concentration and mobility are explored by van der Pauw Hall measurement. As carrier concentration increases, mobility decreases. Carrier concentration changes with Si cell temperature from 6.16x1018 cm-3 to 1.19x1020 cm-3. Photoluminescence (PL) emission peak energy shows blue shift when carrier concentration increases, but the intensity decreases and full width at half maximum (FWHM) broadens. The PL peak of InN film with 1.19x1020 cm-3 split into two peaks 0.74 eV and 0.89 eV. In Raman spectra, Raman modes position and FWHM do not change with carrier concentration. In temperature dependence PL, the dependence of PL spectra shows decrease when carrier concentration increases. In power dependence PL, the PL emission peak energy of InN films with 6.16x1018 cm-3 and 8.50x1018 cm-3 show blue shift, while the PL peaks of InN films with 1.43x1019 cm-3 and 2.27x1019 cm-3 show no significant move. The fitting of power density vs. intensity is linear for all samples, but all slope of them are less than 1 expect for InN film with 1.43x1019 cm-3.

Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. EDELWEISS is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs. An important challenge for EDELWEISS is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence.<br />After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of EDELWEISS II, we have proved the compatibility between a sapphire heat-scintillation detector and the experimental setup.

The main purpose of this research was to investigate new medical applications of femtosecond laser ablation. A near-infrared femtosecond laser was tested and proved to be able to overcome the existing limitations and outperform the conventional long-pulse lasers in the areas of human urinary calculus (kidney stone) lithotripsy and skin treatment. The two primary objectives of my research are: 1) to investigate the feasibility of using femtosecond pulsed laser radiation to ablate urinary calculus of various compositions. The laser-calculus interaction mechanism was characterized using pump probe imaging and fast flash imaging. A novel fiber delivery system was developed to transmit and focus high energy femtosecond pulses for urinary calculus lithotripsy. The successful demonstration of the femtosecond laser lithotripsy provided a promising treatment method better than the existing long-pulse laser lithotripsy in a few different aspects, including less collateral damage to surrounding tissue, small-size debris and more controlled experimental condition. 2) to investigate the depth limitation of femtosecond subsurface ablation in scattering skin sample and develop a prototype tissue optical clearing device to enhance femtosecond beam penetration for deeper subsurface cavitation production in the skin. The successful demonstration of the device has potential benefits to new femtosecond-based therapies for reshaping or removing subcutaneous tissues. / text

In this work columnar nanospirals of AlInN were grown on top of TiN-coated sapphire substrates by magnetron sputtering. A variety of samples with different growth parameters were fabricated and investigated. The main objectives in this work were to optimize the degree of circular polarization and to control the active wavelength region for where this polarization effect occurs. Attempts were made to achieve a high degree of circular polarization in both reflected and transmitted light. It is shown that for reflected light it is possible to achieve a high degree of circular polarization within the visible wavelength regions. For transmitted light the concept of achieving circularly polarized light is proven.

In Sweden, lowest acceptable haemoglobin levels in blood donators are 125g/L for women and 135g/L for men for a test sample taken in the beginning of the blood donation. Levels, which are 10g/L lower, are accepted if the sample is taken after the blood donation. Earlier studies show that the haemoglobin level decreases for a person that is lying down. The two aims of this study were to examine how much the haemoglobin levels change during blood donation and to examine if the photometrical instrument Pronto-7TM shows equivalent results to that of the established method Cell-Dyn Sapphire. In the study, 120 blood donors participated. Blood samples were taken in the beginning and in the end of the donation. Analyses by Pronto-7TM were done before and after the donation. The haemoglobin level decreased significantly during the blood donation. The difference was in mean value 5,9g/L according to Cell-Dyn Sapphire. The decrease was significantly less than 10g/L. The Pronto-7TM gave levels that were 1,6g/L higher than Cell-Dyn Sapphire in mean and the standard deviation was higher for Pronto-7TM than for Cell-Dyn Sapphire. In conclusion, the decrease of the haemoglobin levels was significantly less than the expected difference 10g/L. Pronto-7TM gives results that differs a little from the results of the established method.

The kinetics of incongruent reduction between sapphire and oxygen-controlled Mg-Al melts was studied by measuring spinel-layer thickness, sample-weight change and sample-thickness change as a function of time at various temperatures. To eliminate the crucible contamination caused by impurities in commercial MgO crucibles, self-made high-purity MgO crucibles were achieved by gelcasting method, which is an attractive ceramic-forming technique for making high-purity ceramic parts. The oxygen-controlled alloys were obtained by the three-phase-equilibrium experiments at various temperatures. To avoid MgO formation, the oxygen-controlled alloys prepared at relatively lower temperatures were used for incongruent reaction at relatively higher temperatures. That is to say, the oxygen-controlled alloys prepared at 900°C, 1000°C, and 1100°C were used for spinel formation at 1000°C, 1100°C, and 1200°C, respectively. The experiments were conducted in a vertical furnace, and sapphire wafers were hung vertically in high-purity MgO crucibles so that the natural convection induced by the density change in the melt could be investigated. Experimental results obtained at 1000°C, 1100°C, and 1200°C showed that the spinel layer thickness on two kinds of sapphire wafers, namely {0001} and , followed orientation-independent parabolic kinetics, indicating the diffusion in spinel was one of the rate-limiting steps. In addition, the spinel layer thickness was not a function of position. The results of sample-thickness- change measurements also indicated that the effect of natural convection could be neglected. XPS, XRD, and TEM were also employed to characterize some samples in this study. Based on a simple model where the diffusion in spinel was the only rate-limiting step, the governing partial differential equations for diffusion and fluid dynamics were solved by the finite element method. The calculated theoretical parabolic constants at various temperatures were compared with these experimental results, and a good agreement was obtained. Some preliminary studies were also made on the morphologies of spinel particles at the nucleation stage. It was found that the triangular {111} faces of spinel particles were parallel to the surface of {0001} sapphire substrate. The product shape was consistent with the tetrahedron composed of {111} faces. The morphology of spinel particles on a sapphire substrate was more complicated in that the triangular {111} faces of spinel had to be inclined at a certain angle to the substrate in order to maintain the orientation relationship.

abstract: Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists. The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser. A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (<20 ps), this work shows that it can be adapted for longer pulses of up to tens of nanoseconds. In addition to a model describing damage formation of sub-band gap energy laser light in semiconducting and transparent crystalline dielectrics, a novel nanosecond laser process was successfully realized to generate a thin plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable wavelength nanosecond laser source, and three-dimensional motorized precision stage control. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2015