Le comportement en fatigue du polychloroprène, un élastomère synthétique, est fonction de : • l’endommagement lié à l’amorçage et la propagation de fissures. • le renforcement induit par la cristallisation sous tension. • l’auto-échauffement de l’éprouvette. L’équilibre entre ces trois phénomènes a été investigué en suivant l’évolution de l’aire de l’hystérésis et de la raideur au cours d’essais de fatigue à amplitude constante. Des essais après un précyclage ont permis de modifier cet équilibre en travaillant sur une éprouvette ayant un historique de chargement. La présence initiale de fissures dans une éprouvette dont l’autoéchauffement est très faible induit un effet de la cristallisation sous tension plus marqué. Une nette amélioration des caractéristiques en fatigue est ainsi observée. Des essais à amplitude variable ont également permis d’observer l’influence de la modification de l’équilibre entre ces trois phénomènes. Ces observations ont mené à la construction du diagramme raideur/hystérésis permettant l’unification des courbes à une sollicitation donnée, indépendamment de l’historique de chargement. Une approche par amorçage de fissure a permis de mettre au point une méthode issue de l’analyse de l’évolution de l’aire de l’hystérésis pour déterminer très rapidement la limite à 106 cycles en fatigue du CR. / The fatigue behavior of the polychloroprene, a synthetic rubber, relies on : Damage caused by the initiation and the propagation of the cracks The reinforcement caused by the strain-induced crystallization The self-heating of the sample The equilibrium between those three phenomena was investigated by following the evolution of the hysteresis area and the stiffness during constant amplitude fatigue tests Some pre cycling tests allowed the modification of this equilibrium by working on a sample with a loading history. The presence at the beginning of the fatigue test of cracks in the sample, which undergoes at that time of the test a very low self-heating, is subjected to a more important effect of the strain induced crystallization. The fatigue characteristic of the CR is well enhanced. Some variable amplitude tests made possible the observation of the consequences of the modification of this equilibrium. It leads to the drawing of a stiffness/hysteresis diagram allowing the unification of the curves at a given solicitation, independently of the loading history. A fast method derived from the study of the evolution of the hysteresis area to find the fatigue limit at 106 cycles using the crack initiation approach has been presented.

Este trabalho contempla um estudo sistemático das propriedades elétricas de óxidos cerâmicos a base de manganês. Ênfase foi dada a sistemas onde uma correlação forte entre os graus de liberdade de carga, spin e rede com ordenamento orbital resultam em um estado fundamental heterogêneo, devido a uma separação de fases. Com esse objetivo, foram preparadas amostras policristalinas e monocristalinas de Nd0.5Ca0.5Mn1-xCrxO3, 0.0 x 0.07. A caracterização destas amostras, via medidas de transporte elétrico (T) e de susceptibilidade magnética (T), revelou a ocorrência de uma temperatura de ordenamento de carga CO em TCO 250 K e que uma substituição pequena de Mn por Cr resulta na supressão desse estado CO, induzindo uma transição de fase do tipo metal-isolante (MI) no sistema. Concomitantemente a esta transição MI observa-se uma transição de fase do estado paramagnético PA isolante para um estado ferromagnético FM metálico em TMI ~ TC ~ 140 K. A análise combinada dos resultados experimentais de resistividade elétrica (T,H), magnetização (T) e de espectroscopia de impedância Z(,T) revelaram uma coexistência e competição entre fases na determinação do estado fundamental dessas manganitas. Tal competição foi observada ocorrer em uma larga faixa de temperatura, ou seja, abaixo da temperatura TCO 250 K até a mais baixa temperatura estudada de 1.4 K. Os dados também permitiram concluir que a natureza do estado fundamental desses materiais compreende de uma mistura de fases isolantes entre as temperaturas TCO 250 K e TMI ~ TC ~ 140 K. Por outro lado, e abaixo de TMI, o estado fundamental do sistema pode ser visualizado como sendo composto de uma fina mistura de duas fases: uma com ordenamento de carga e orbital (CO/OO) e de caráter isolante e uma outra ordenada ferromagneticamente FM e com características metálicas. A natureza deste estado fundamental heterogêneo foi confirmada através de medidas de relaxação da resistência elétrica (T,t) obtidas nas duas regiões de temperatura acima citadas. Os dados de (T,t) ainda permitiram concluir que o estado fundamental desses materiais além de heterogêneo é dinâmico, como esperado em um cenário de separação de fases. Uma outra característica desse estado heterogêneo, notadamente abaixo de TMI, é que o mesmo responde de forma não convencional a estímulos diversos, incluindo grandes excitações de corrente elétrica aplicada I. Nesse contexto, a natureza heterogênea do estado CO para T < TCO, bem como da coexistência de fases CO e FM em T < TMI foi provada via um estudo sistemático das propriedades de transporte e magnetização usando diferentes intensidades de corrente elétrica aplicada em medidas de (T,I), M(T,I) e através de curvas características V-I. A observação de fenômenos não lineares, principalmente em curvas características V-I, indicou que os mesmos são precursores de transições de fase abruptas, quando altas densidades de corrente são aplicadas nos materiais. Os dados também permitiram concluir que a corrente elétrica não é distribuída homogeneamente neste estado fundamental heterogêneo. Isto implica em uma localização de corrente e conseqüente efeito Joule dentro do material. A dissipação devido ao efeito Joule é responsável por um auto-aquecimento do material e pode ser suficiente para induzir transições de fase devido ao aumento de temperatura da amostra. A aplicação de um modelo simples de dissipação de calor aplicado aos dados experimentais indicam que o fenômeno de localização de corrente e efeito Joule são fundamentais para o entendimento de transições de fase induzidas por corrente elétrica nessas manganitas. / A systematic study of the electrical properties in doped manganese oxides is presented. Special attention was given to compositions where the strong correlation between charge, spin, and lattice degrees of freedom with orbital ordering resulting in a heterogeneous ground state leads to phase separation. To do this work, polycrystalline and monocrystalline Nd0,5Ca0,5Mn1-xCrxO3, 0,0 x 0,07 samples were prepared. The results obtained through electrical transport (T) and, magnetic susceptibility (T) have revealed the occurrence of charge ordering at TCO 250 K. A small partial substitution of Mn by Cr results in a suppression of the long range charge ordering state and induces both a magnetic from paramagnetic PA to ferromagnetic FM and a electronic from insulating to metallic phase transition at TMI ~ TC ~ 140 K. A combined analysis of the experimental results performed through (T,H), (T), and impedance spectroscopy Z(,T) revealed the coexistence of competing phases in the ground state of these manganites. Such a competition has been found in a large temperature range, from TCO 250 down to 1,4 K. In addition, it is suggested that the ground state comprises a delicate mixture of insulating phases between TCO 250 K e TMI ~ TC ~ 140 K. On the other hand, below TMI, the ground state can be visualized as comprised of two phases: (1) insulating charge orbital ordering (CO/OO) and (2) ferromagnetic metallic phases. The nature of this heterogeneous ground state was confirmed through relaxation measurements (T,t) performed in both temperature intervals cited above. The data indicated that besides to be heterogeneous this ground state is dynamical, as expected in the phase separation scenario. Moreover, this ground state responds in an unconventional fashion when the system is stimulated by electrical current, notably below TMI. Within this context, the heterogeneous nature of the CO state for T < TCO, and the coexistence of CO and FM phases for T < TMI, were studied through magnetic and electrical measurements using electrical current of different magnitude (T,I), M(T,I) and characteristic V-I curves. The non-linear phenomena are precursors of the very sharp transition when high electrical current density is applied. The data also allows to conclude that the electrical current is not homogeneously distributed throughout the sample in this ground state. Differently, the electrical current is localized in thin channels bringing about a large self-heating Joule effect. We argue that the dissipation due to Joule effect is responsible for the self-heating which in turn is large enough to induce phase transition due to the temperature raise. The application of a simple heat dissipation model to the experimental data reveals that both the electrical current localization phenomenon and the Joule effect are very important to the understanding of the current-induced phase transition in these manganites.

On assiste aujourd’hui à une évolution des systèmes électroniques nomades vers des fonctionnalités plus avancées. Cette complexification des systèmes électroniques nomades nécessite une augmentation de la puissance de calcul des puces électronique, ce qui se peut se traduire par une utilisation d’une technologie CMOS agressive, mais qui se complète aujourd’hui par une technique appelée intégration 3D. Il ne s’agit donc plus d’une évolution classique à l’échelle du transistor suivant la loi de Moore mais à celle de l’échelle plus large du boîtier / système, on parle alors de la loi de « More than Moore ». L’empilement tridimensionnel (3D) des puces électroniques engendre une augmentation de la densité de puissance totale dissipée par unité de surface de l’empilement final. Cette puissance, résultant essentiellement de l’effet joule dans les transistors et l’interconnexion, est une source de chaleur qui contribue à l’augmentation de la température globale de la puce. L’objectif global de cette thèse est d’étudier les échanges thermiques dans un empilement de puces 3D durant leur fonctionnement. On s’attachera à comprendre les effets géométriques ou matériaux de l’empilement ainsi que l’impact du placement des TSV, Bumps ... sur ces échanges thermiques. L’étude s’appuie sur des simulations numériques validées par des mesures expérimentales sur des empilements 3D. Ces études numérique et expérimentale auront comme finalité de déduire des règles de dessin thermiques qui seront validées sur le dessin de circuits basiques ou plus complexes. Dans la suite, ces différents objectifs seront motivés et abordés en détail. L’établissement d’un modèle thermique basé sur des simulations en éléments finis d’un procédé industriel CMOS 65 nm 3D permettra d’aborder le problème de modélisation de la manière la plus précise possible. En effet, les précédentes simulations ont utilisé des modèles compacts – donc de moindre précision que les éléments finis – et un procédé générique qui ne reflète pas toutes les propriétés des matériaux, et en particulier celles des interfaces. Les résultats ainsi obtenus seront validés par des mesures sur des puces empilées réalisées dans le procédé considéré. Dans cette partie expérimentale, l’objectif est de déterminer une cartographie de la température dans un empilement 3D en utilisant des capteurs embarqués dans le silicium, et ce sous différentes conditions d’opération de la puce 3D. Il en ressortira un modèle numérique validé et calibré par des mesures expérimentales. / Today we are witnessing an evolution of mobile electronic systems to more advanced features. The complexity of mobile electronic systems requires an increase in computing power of electronic chips, which can lead to the use of aggressive CMOS technology, but which now completed with a technique called 3D integration. It is more of a classical evolution across the transistor following Moore's law but that of the wider scale of the packaging / system, it is called the law of "More than Moore". Three dimensional (3D) stack of electronic chip generates an increase in the density of total power dissipated per unit area of the final stack. This power, essentially resulting in the Joule effect transistors and interconnection, is a source of heat which contributes to increase the overall temperature of the chip. The global objective of this thesis is to study the heat transfer in a 3D stack of chips during operation. We will seek to understand the geometric or materials effects of the stack and the impact of the placement of TSV, Bumps ... on these heat exchanges. The study is based on numerical simulations validated by experimental measurements on 3D stacks. These numerical and experimental studies have as a goal to deduce thermal design rules that will be validated in the drawing of basic or more complex circuits. In the following, these goals will be motivated and discussed in detail. The establishment of a thermal model based on finite element simulations of an industrial process 3D CMOS 65 nm will address the problem of modelling the most accurate way possible. Indeed, previous simulations used compact models - so that the lower accuracy of finite elements - and a generic method that does not reflect all of the properties of materials, and in particular interfaces. The results obtained will be validated by measurements on stacked chips carried out within the process concerned. In the experimental part, the objective is to determine a thermal mapping in a 3D stack using sensors embedded in the silicon, and under different conditions of 3D chip process. This will provide a numerical model validated and calibrated by experimental measurements.

Self-heating in storage facilities of biomass pellet can lead to spontaneous combustion. This has resulted in many fires over the years, causing both financial and environmental losses. In order to assess the risk for spontaneous combustion of biomass pellets during storage, it is important to know how prone the fuel is to self-heating, i.e. to determine its reactivity. This thesis presents experimental work performed to develop a sensitive screening test procedure for biomass pellets, using isothermal calorimetry for direct measurement of the heat production rate. This method can be used to compare the reactivity of different biomass pellets. This could be useful for e.g. facility owners to gain better knowledge of their fuels propensity for self-heating and thereby facilitate safer storage. The screening test procedure can also be used for research purposes. Experiments have been performed with 31 different biomass pellet batches to investigate how the pellet composition, origin, etc. influence the reactivity of the pellets. The results from these experiments clearly show a significant difference in reactivity between different types of pellets. The results indicate that pine/spruce mix pellets are significantly more reactive than all other types of pellets tested, and that pellets consisting of 100 % pine are more reactive than pellets consisting of 100 % spruce. Pellets produced from winery wastes, straw, or eucalyptus, have low reactivity compared to pellets consisting of pine and/or spruce. The reactivity of the pellets was shown to be reduced by either introducing certain types of anti-oxidants into the pellets or by extracting lipids from the raw material of pellets. The screening test procedure is already being used today by some facility owners for assessing their fuels propensity for self-heating. The procedure is also one of the suggested test methods in “ISO/CD 20049 Solid biofuels — Determination of self-heating of pelletized biofuels”. / This thesis presents experimental work performed to develop a sensitive screening test procedure for biomass pellets, using isothermal calorimetry for direct measurement of the heat production rate. This method can be used to directly compare the reactivity, that is how prone the fuel is to self-heating, of different batches of biomass pellets. The results could be used for safety assessment by the industry or for research purposes to investigate how different factors influence the self-heating potential. Experiments were performed with 31 different biomass pellet batches to investigate how the pellet composition, origin, etc. influence the heat release rate. The results clearly show that there is a significant difference in reactivity between different types of pellets. Pine/spruce mix pellets are more reactive than the other types of pellets tested and pellets consisting of 100 % pine are more reactive than pellets consisting of 100 % spruce. Pellets produced from winery wastes, straw, or eucalyptus, have low reactivity compared to pellets consisting of pine and/or spruce. The results also show that the reactivity of the pellets can be reduced by either introducing certain types of anti-oxidants into the pellets or by extracting lipids from the raw material of pellets.

L’Inconel 718 est utilisé dans les disques de turbine des moteurs d’avion, de par sa haute résistance à la corrosion, à l’oxydation, au fluage et sa haute résistance mécanique à très haute température. Le nombre total de cycles de ces composants mécaniques s’élève à 109~1010 durant sa vie. Ils subissent des chargements de grande amplitude à faible fréquence, comme les forces centrifuges ou les contraintes thermiques mais aussi des chargements de faibles amplitudes à très haute fréquence, du aux vibrations des pales. Dans ce travail, on se propose d’étudier la fatigue à très grand nombre de cycles (VHCF) de l’Inconel 718 en utilisant des machines de fatigue ultrasonique, fonctionnant à 20KHz. Le système d’acquisition utilise des cartes NI et le logiciel LabView pour superviser la fréquence, la température, les déplacements durant toute la durée des tests. Des capteurs laser Keyence utilisant deux sondes pour les faces supérieure et inférieure de l’éprouvette permettent de capturer la fréquence et les modes de vibration. La différence entre les valeurs moyennes mesurées permet d’accéder à l’allongement de l’éprouvette, dû à l’auto-échauffement.3 types de matériaux avec différents traitements thermiques, AR, DA et DAHQ de l’ONERA et SAFRAN sont comparés. La différence au niveau de la taille de grain, de la phase, des précipités, … est analysée par micrographie métallographique en utilisant un microscope optique (MO) et un microscope électronique à balayage (MEB). Le comportement en traction quasi-statique et sous chargement cyclique contrainte-déformation est aussi proposé. La transition entre durcissement et adoucissement cyclique apparait à l’issue du traitement thermique. Finalement, les surfaces de ruptures sont observées en utilisant des caméras optiques et un MEB afin d’identifier les mécanismes de ruptures de l’Inconel 718 dans le domaine de la fatigue à très grand nombre de cycles. / Inconel 718 is widely used in turbine disk of aeronautic engines, due to its high resistance to corrosion, oxidation, thermal creep deformation and high mechanical strength at elevated temperature. The total cycle of these mechanical components is up to 109~1010 during its whole lifetime. It endures high-amplitude low-frequency loading including centrifugal force or thermal stress, and also low-amplitude high-frequency loading came from vibration of blade.In this work, the very high cycle fatigue (VHCF) behaviour of Inconel 718 with self-heating phenomenon without any cooling is studied using ultrasonic fatigue system at 20KHz. Acquisition system is improved using NI capture card with LabView for monitoring the frequency, temperature, displacement and so on during all the tests. Keyence laser sensor with two probes at the top and bottom surfaces of the specimens is used to reveal the frequency and vibration mode. The difference of mean values between these two probes is the elongation of the specimen caused by self-heating phenomenon.Three sets of materials with different heat treatment, As-Received (AR), Directly Aged (DA) and Directly Aged High Quality (DAHQ) from ONERA and SAFRAN are compared. The difference of grain size, phase, precipitate particle, etc. is investigated by metallographic micrograph using optical microscope (OM) and scanning electron microscope (SEM). Quasi-static uniaxial tensile property and cyclic stress-strain response is also proposed. The transition from cyclic hardening to cyclic softening appears after aged heat treatment. Finally, fracture surfaces are observed using optical camera and scanning electron microscope in order to identify the mechanism of fracture of Inconel 718 in the VHCF domain.

Le développement de la technologie des composants CMOS ultimes à grille ultra-courte (L < 20 nm) se heurte à de nombreuses difficultés technologiques, mais également à des limites thermiques qui perturbent notablement les règles de mise à l'échelle communément employées jusqu'à présent. Les fortes densités de courant obtenues dans des zones actives aussi réduites génèrent un important échauffement local (par effet Joule), lié à l'émission de phonons par les porteurs chauds, qui peut conduire à des réductions très sensibles des performances, voire à des défaillances. Ce phénomène est identifié comme un des plus critiques pour la poursuite de l'augmentation de la densité d'intégration des circuits. Cela est particulièrement crucial dans les technologies SOI (silicium sur isolant), où la présence de l'isolant enterré constitue un frein à l'évacuation de la chaleur. À l'échelle nanométrique, l'étude théorique de ces phénomènes d'échauffement n'est plus possible par des modèles macroscopiques (coefficient de diffusion de la chaleur) mais nécessite une description microscopique détaillée des transferts de chaleur qui sont localement hors d’équilibre. Il s'agit donc de modéliser de façon appropriée, non seulement le transport électronique et la génération de phonons, mais aussi le transport de phonons hors équilibre et les interactions phonons-phonons et électrons-phonons.Le formalisme de l’équation de transport de Boltzmann (BTE) est très bien adapté à l'étude de ce problème. En effet, il est largement utilisé depuis des années pour l'étude du transport des particules chargées dans les composants semi-conducteurs. Ce formalisme est beaucoup moins standard pour étudier le transport des phonons. Une des problématiques de ce travail concerne le couplage de la résolution de la BTE des phonons avec celle des électrons.Ce travail de thèse a développé un algorithme de calcul du transport de phonons par résolution directe de la BTE des phonons. Cet algorithme de transport de phonon a été couplé au transport électronique simulé grâce au logiciel "MONACO" basé sur une résolution statistique (ou Monte Carlo) de la BTE. Finalement, ce nouveau simulateur électrothermique a été utilisé pour étudier les effets d’auto échauffement dans des nano-transistors. L’intérêt principal de ces travaux est de permettre une analyse du transport electro-thermique au-delà d’une approche macroscopique (respectivement formalisme de Fourier pour la thermique et dérive-diffusion pour le courant). En effet, il donne accès aux distributions de phonons dans le dispositif et pour chaque mode de phonon. En particulier, ce simulateur apporte une meilleure compréhension des effets des électrons chauds sur les points chauds et leur relaxation dans les accès. / The ultra-short gate (LG < 20 nm) CMOS components (Complementary Metal-Oxide-Semiconductor) face thermal limitations due to significant local heating induced by phonon emission by hot carriers in active regions of reduced size. This phenomenon, called self-heating effect, is identified as one of the most critical for the continuous increase in the integration density of circuits. This is especially crucial in SOI technology (silicon on insulator), where the presence of the buried insulator hinders the dissipation of heat.At the nanoscale, the theoretical study of these heating phenomena, which cannot be led using the macroscopic models (heat diffusion coefficient), requires a detailed microscopic description of heat transfers that are locally non-equilibrium. It is therefore appropriate to model, not only the electron transport and the phonon generation, but also the phonon transport and the phonon-phonon and electron-phonon interactions. The formalism of the Boltzmann transport equation (BTE) is very suitable to study this problem. In fact, it is widely used for years to study the transport of charged particles in semiconductor components. This formalism is much less standard to study the transport of phonons. One of the problems of this work concerns the coupling of the phonon BTE with the electron transport.In this context, wse have developed an algorithm to calculate the transport of phonons by the direct solution of the phonon BTE. This algorithm of phonon transport was coupled with the electron transport simulated by the simulator "MONACO" based on a statistical (Monte Carlo) solution of the BTE. Finally, this new electro-thermal simulator was used to study the self-heating effects in nano-transistors. The main interest of this work is to provide an analysis of electro-thermal transport beyond a macroscopic approach (Fourier formalism for thermal transport and the drift-diffusion approach for electric current, respectively). Indeed, it provides access to the distributions of phonons in the device for each phonon mode. In particular, the simulator provides a better understanding of the hot electron effects at the hot spots and of the electron relaxation in the access.

Fundação de Amparo a Pesquisa do Estado de Minas Gerais / This work is dedicated to the development of a strategy for numerical-computational modeling and experimental verification of the self-heating phenomenon in viscoelastic materials with emphasis on the thermal runaway phenomenon taking into account the combined effects of dynamic loads and static preloads. The methodology of modeling by finite element allows us to consider the influence of frequency, temperature and static preload on the self-heating phenomenon of the linear viscoelastic materials. For this purpose, modifications are made that allow thermomechanical analysis of more complex viscoelastic structures, in addition the evaluation of introducing metal inserts in bulk material for reducing effects of self-heating. The validation of the proposed model and the identification of the physical parameters of thermal efficiency and heat transfer by natural convection, initially unknown, are obtained by comparison of the results of numerical simulations with the corresponding obtained through experimental tests for a specimen formed by a translational viscoelastic joint. The curve-fitting procedure is formulated as an inverse optimization problem through use of the Firefly Algorithm for minimizing the objective function defined as the square difference between the temperatures obtained from the simulations and the corresponding generated by the tests for each time instant. The accuracy and limitations of the model are evaluated by comparing the experimental and simulated temperature profile, allowing to verify the numerical evidence and the qualitative consistence of the results obtained with reported in the literature for the thermal runaway phenomenon for simple devices without effect preload. / Este trabalho é dedicado ao desenvolvimento de uma estratégia de modelagem numéricocomputacional e verificação experimental do fenômeno do autoaquecimento de materiais viscoelásticos com ênfase no fenômeno da fuga térmica levando-se em conta os efeitos combinados de cargas dinâmicas e pré-cargas estáticas. A metodologia de modelagem por elementos finitos permite considerar a influência da frequência, da temperatura e da pré-carga estática no fenômeno do autoaquecimento de materiais viscoelástico lineares. Para tanto, são feitas modificações que permitem a análise termomecânica de estruturas viscoelásticas mais complexas, além da avaliação da introdução de insertos metálicos no volume do material para a redução dos efeitos do autoaquecimento. A validação do modelo proposto e a identificação dos parâmetros físicos de rendimento térmico e de transferência de calor por convecção natural incialmente desconhecidos, são obtidos através da confrontação dos resultados das simulações numéricas com os correspondentes obtidos via ensaios experimentais para um corpo de prova formado por uma junta viscoelástica translacional. O procedimento de ajuste de curvas é formulado como um problema inverso de otimização via emprego da técnica Colônia de Vagalumes para a minimização da função objetivo definida como sendo a diferença quadrática entre as temperaturas obtidas das simulações e as correspondentes geradas pelos ensaios para cada instante de tempo. A precisão e as limitações do modelo são avaliadas pela comparação dos perfis simulados e experimentais de temperatura, possibilitando confirmar as evidências numéricas e a consistência qualitativa dos resultados obtidos com o reportado na literatura para o fenômeno da fuga térmica para dispositivos mais simples e sem o efeito da pré-carga. / Mestre em Engenharia Mecânica

Malgré plusieurs décennies d'études expérimentales et numériques sur la tenue en fatigue d'assemblages soudés, cette problématique demeure une préoccupation principale de l'industrie automobile. En effet, de nombreux composants aux géométries complexes (e.g. berceaux) sont obtenus à partir de pièces soudées et constituent des éléments de sécurité pour lesquels aucune défaillance ne peut être acceptée. Malgré les progrès en modélisation numérique, des essais sont toujours nécessaires afin de fournir des données sur éprouvettes « simples » afin d'alimenter les modèles numériques, mais aussi de démontrer le bon dimensionnement des structures. Les procédures classiques d'essais de fatigue sont coûteuses en temps et nécessitent la destruction de plusieurs pièces. La méthode dite d'auto-échauffement permet de réduire significativement le temps d'essai et propose une approche non destructive. Cette méthode consiste à mesurer l'évolution de température en surface de la structure étudiée au cours du chargement cyclique. Cette approche permet de tirer avantage du signal thermique macroscopique afin de mettre en évidence la micro-plasticité responsable de la rupture par fatigue. Les objectifs du travail présenté sont de déterminer si un lien peut être réalisé entre les mesures de température et la tenue en fatigue d'assemblages soudés, puis d'étudier l'influence de paramètres sur la tenue en fatigue grâce à la méthode proposée. Un protocole expérimental est d'abord proposé afin de mesurer l'évolution de température des mini-structures soudées sous sollicitation cyclique. Une première analyse de la réponse thermique de simples tôles d'acier sous chargement cyclique de faible amplitude est proposée afin de valider un modèle déterministe de champ de source à la fois pour des sollicitations de traction et de flexion. Ces essais permettent par la suite de décrire correctement le comportement thermique de la matière de base des éprouvettes soudées hors du cordon de soudure. Le modèle est alors étendu à l'étude d'éprouvettes soudées, avec la prise en compte de la dissipation de la zone soudée. Une fois le champ de source identifié à partir du modèle, son évolution en fonction de l'amplitude du chargement appliqué mène à une courbe d'auto-échauffement. L'analyse de cette courbe permet une bonne estimation de la limite en fatigue de l'éprouvette soudée après seulement quelques heures d'essais. La méthode est alors appliquée à d'autres configurations de mini-structures soudées afin d'étudier l'influence du grenaillage et d'un gradient de contrainte en zone critique sur la tenue en fatigue. Finalement, la procédure d'essai est appliquée afin de déterminer la tenue en fatigue d'une pièce industrielle, un triangle de suspension mécano-soudé. À cause des mauvaises conditions aux limites thermiques sur une telle structure, une autre méthode est proposée afin de déduire une première estimation du champ de source sur toute la surface observée à partir des mesures thermiques. Cette estimation mène à l'identification de la zone critique en fatigue de la structure et à une première bonne estimation de sa limite en fatigue. / Fatigue design of weld assemblies still remains of prior concern in the automotive industry, despite several decades of experimental, theoretical and numerical body of work. Actually, many complex components (e.g. front and rear axles) are embedded thanks to welding process. Such welded assemblies are expected to be designed as high-safety parts, for which any fatigue failure is supposed to be prevented. Despite numerical modelling is more and more effective, experimental tests are still necessary in order to provide basic design data and at last to prove the design reliability. Standard fatigue tests procedures are sensibly time consuming, are usually destructive and need for several specimens in order to manage reliable results. Conversely, the so-called self-heating tests offer the opportunity to dramatically shorten the test duration and save specimens because it is a non-destructive method. It consists in measuring the temperature evolution of the structure surface during cyclic loading. Such an approach allows to take advantage of the macroscopic thermal signature of microscopic plasticity processes responsible for fatigue damage. The purpose of the present work is the determination of a correlation between thermal measurement and fatigue properties of welded structures, and then studying the influence of parameters on fatigue properties with the developed method. An experimental protocol is first proposed to measure the temperature of the tested specimen under cyclic loading. A first analysis of the thermal response of standard steel sheet specimen under low load amplitude is proposed in order to validate a deterministic heat source model for both tensile and bending tests. These tests allow us to correctly describe the thermal behavior of the base material of welded specimen away from the joint. Then, the model is extended to welded specimen in order to take into account the dissipation of the welded area. Once the dissipative heat source is identified thanks to the model, its evolution with the applied loading leads to a self-heating curve allowing an estimation of the fatigue limit of the welded specimen after only few hours of test. The method is then applied to other configurations of welded specimens in order to study the effects of shot peening and stress gradient on fatigue properties. Finally, the testing procedure is applied for the determination of an industrial component fatigue properties, a welded car wishbone. Due to the bad heat boundary condition, another analysis is proposed to estimate the heat source along the entire component. This estimation leads to the determination of the weakest area of the structure concerned by fatigue and a first good estimation of its fatigue limit.

Phospholipid vesicles are common model systems for cell membranes. Important aspects of the membrane function relate to its mechanical properties. Here we have investigated the deformation behaviour of phospholipid vesicles in a dual-beam laser trap, also called an optical stretcher. This study explicitly makes use of the inherent heating present in such traps to investigate the dependence of vesicle deformation on temperature. By using lasers with different wavelengths, optically induced mechanical stresses and temperature increase can be tuned fairly independently with a single setup. The phase transition temperature of vesicles can be clearly identified by an increase in deformation. In the case of no heating effects, a minimal model for drop deformation in an optical stretcher and a more specific model for vesicle deformation that takes explicitly into account the angular dependence of the optical stress are presented to account for the experimental results. Elastic constants are extracted from the fitting procedures, which agree with literature data. This study demonstrates the utility of optical stretching, which is easily combined with microfluidic delivery, for the future serial, high-throughput study of the mechanical and thermodynamic properties of phospholipid vesicles.

Anyone who decides to buy a new mobile phone today is likely to buy a screen made from organic light-emitting diodes (OLEDs). OLEDs are a relatively new display technology and will probably account for the largest market share in the upcoming years. This is due to their brilliant colors, high achievable display resolution, and comparably simple processing. Since they are not based on the rigid crystal structure of classical semiconductors and can be produced as planar thin-film modules, they also enable the fabrication of large-area lamps on flexible substrates – an attractive scenario for future lighting systems. Despite these promising properties, the breakthrough of OLED lighting technology is still pending and requires further research. The charge-carrier dynamics in an OLED determine its device functionality and, therefore, enable the understanding of fundamental physical concepts and phenomena. From the description of charge-carrier dynamics, this work derives experimental methods and device concepts to optimize the efficiency and stability of OLEDs. OLEDs feature an electric current of charge carriers (electrons and holes) that are intended to recombine under the emission of light. This process is preceded by charge-carrier injection and their transport to the emission layer. These three aspects are discussed together in this work. First, a method is presented that quantifies injection resistances using a simple experiment. It provides a valuable opportunity to better understand and optimize injection layers. Subsequently, the charge carrier transport at high electrical currents, as required for OLEDs as bright lighting elements, will be investigated. Here, electro-thermal effects are presented that form physical limits for the design and function of OLED modules and explain their sudden failure. Finally, the dynamics and recombination of electro-statically bound charge carrier pairs, so-called excitons, are examined. Various options are presented for manipulating exciton dynamics in such a way that the emission behavior of the OLED can be adjusted according to specific requirements.:List of publications . . . . . . . . . . . . . . . . . v List of abbreviations . . . . . . . . . . . . . . . . . ix 1 Introduction . . . . . . . . . . . . . . . . . 1 2 Fundamentals . . . . . . . . . . . . . . . . . 5 2.1 Light sources and the human society . . . . . . . . . . . . . . . . . 5 2.1.1 Human light perception . . . . . . . . . . . . . . . . . . . . 8 2.1.2 Physical light quantification . . . . . . . . . . . . . . . . . . 10 2.1.3 Non-visual light impact . . . . . . . . . . . . . . . . . . . . . 13 2.1.4 Implications for modern light sources . . . . . . . . . . . . . 15 2.2 Organic semiconductors . . . . . . . . . . . . . . . . . . . . . . . . 17 2.2.1 Molecular energy states . . . . . . . . . . . . . . . . . . . . . 18 2.2.2 Intramolecular state transitions . . . . . . . . . . . . . . . . 24 2.2.3 Molecular films . . . . . . . . . . . . . . . . . . . . . . . . . 31 2.2.4 Electrical doping . . . . . . . . . . . . . . . . . . . . . . . . 34 2.2.5 Charge-carrier transport . . . . . . . . . . . . . . . . . . . . 36 2.2.6 Exciton formation and recombination . . . . . . . . . . . . . 38 2.2.7 Exciton transfer . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.3 Organic light-emitting diodes . . . . . . . . . . . . . . . . . . . . . 44 2.3.1 Structure and operation principle . . . . . . . . . . . . . . . 44 2.3.2 Metal-semiconductor interfaces . . . . . . . . . . . . . . . . 47 2.3.3 Typical operation characteristics . . . . . . . . . . . . . . . . 49 2.4 Colloidal nanocrystal emitters . . . . . . . . . . . . . . . . . . . . . 52 2.4.1 Terminology: Nanocrystals and quantum dots . . . . . . . . 52 2.4.2 The particle-in-a-box model . . . . . . . . . . . . . . . . . . 54 2.4.3 Surface passivation . . . . . . . . . . . . . . . . . . . . . . . 55 3 Materials and methods . . . . . . . . . . . . . . . . . 57 3.1 Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 3.1.1 OLED materials . . . . . . . . . . . . . . . . . . . . . . . . . 57 3.1.2 Materials for photoluminescence . . . . . . . . . . . . . . . . 60 3.2 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 3.2.1 Thermal evaporation . . . . . . . . . . . . . . . . . . . . . . 62 3.2.2 Solution processing . . . . . . . . . . . . . . . . . . . . . . . 64 3.3 Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 3.3.1 Absorbance spectroscopy . . . . . . . . . . . . . . . . . . . . 66 3.3.2 Photoluminescence quantum yield . . . . . . . . . . . . . . . 66 3.3.3 Excitation sources . . . . . . . . . . . . . . . . . . . . . . . 67 3.3.4 Sensitive EQE for absorber materials . . . . . . . . . . . . . 68 3.4 Exciton-lifetime analysis . . . . . . . . . . . . . . . . . . . . . . . . 69 3.4.1 Triplet lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 69 3.4.2 Singlet-state lifetime . . . . . . . . . . . . . . . . . . . . . . 70 3.4.3 Lifetime extraction . . . . . . . . . . . . . . . . . . . . . . . 70 3.5 OLED characterization . . . . . . . . . . . . . . . . . . . . . . . . . 73 3.5.1 Current-voltage-luminance and quantum efficiency . . . . . . 73 3.5.2 Temperature-controlled evaluation . . . . . . . . . . . . . . . 74 4 Charge-carrier injection into doped organic films . . . . . . . . . . . . . . . . . 77 4.1 Ohmic injection contacts . . . . . . . . . . . . . . . . . . . . . . . . 79 4.2 Device architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 4.2.1 Conception . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 4.2.2 Device symmetry . . . . . . . . . . . . . . . . . . . . . . . . 80 4.2.3 Device homogeneity . . . . . . . . . . . . . . . . . . . . . . . 83 4.3 Resistance characteristics . . . . . . . . . . . . . . . . . . . . . . . . 84 4.3.1 Experimental results . . . . . . . . . . . . . . . . . . . . . . 84 4.3.2 Equivalent-circuit development . . . . . . . . . . . . . . . . 85 4.4 Impedance spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . 92 4.4.1 Measurement fundamentals . . . . . . . . . . . . . . . . . . 92 4.4.2 Thickness dependence . . . . . . . . . . . . . . . . . . . . . 93 4.4.3 Temperature dependence . . . . . . . . . . . . . . . . . . . . 95 4.5 Depletion zone variation . . . . . . . . . . . . . . . . . . . . . . . . 97 4.6 Molybdenum oxide as a case study . . . . . . . . . . . . . . . . . . 99 5 Charge-carrier transport and self-heating in OLED lighting . . . . . . . . . . . . . . . . .101 5.1 Joule self-heating in OLEDs . . . . . . . . . . . . . . . . . . . . . . 104 5.1.1 Electrothermal feedback . . . . . . . . . . . . . . . . . . . . 104 5.1.2 Thermistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 5.1.3 Cooling strategies . . . . . . . . . . . . . . . . . . . . . . . . 106 5.2 Self-heating causes lateral luminance inhomogeneities in OLEDs . . 108 5.2.1 The influence of transparent electrodes . . . . . . . . . . . . 108 5.2.2 Luminance inhomogeneities in large OLED panels . . . . . . 110 5.3 Electrothermal OLED models . . . . . . . . . . . . . . . . . . . . . 112 5.3.1 Perceiving an OLED as thermistor array . . . . . . . . . . . 112 5.3.2 The OLED as a single three-layer thermistor . . . . . . . . . 114 5.3.3 A numerical 3D model of heat and current flow . . . . . . . 116 5.4 OLED stack and experimental conception . . . . . . . . . . . . . . 118 5.5 The Switch-back effect in planar light sources . . . . . . . . . . . . 120 5.5.1 Predictions from numerical 3D modeling . . . . . . . . . . . 121 5.5.2 Experimental proof . . . . . . . . . . . . . . . . . . . . . . . 124 5.5.3 Variation of vertical heat flux . . . . . . . . . . . . . . . . . 127 5.5.4 Variation of the OLED area . . . . . . . . . . . . . . . . . . 131 5.6 Electrothermal tristabilities in OLEDs . . . . . . . . . . . . . . . . 133 5.6.1 Observing different burn-in schematics . . . . . . . . . . . . 133 5.6.2 Bistability and tristability in organic semiconductors . . . . 134 5.6.3 Experimental indications for attempted branch hopping . . . 138 5.6.4 Saving bright OLEDs from burning in . . . . . . . . . . . . 144 5.6.5 Taking another view onto the camera pictures . . . . . . . . 145 6 Charge-carrier recombination and exciton management . . . . . . . . . . . . . . . . .147 6.1 Optical down conversion . . . . . . . . . . . . . . . . . . . . . . . . 149 6.1.1 Spectral reshaping of visible OLEDs . . . . . . . . . . . . . 149 6.1.2 Infrared-emitting OLEDs . . . . . . . . . . . . . . . . . . . . 155 6.2 Dual-state Förster transfer . . . . . . . . . . . . . . . . . . . . . . . 158 6.2.1 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 6.2.2 Verification . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6.3 Singlet fission and triplet fusion in rubrene . . . . . . . . . . . . . . 161 6.3.1 Photoluminescence of pure and doped rubrene films . . . . . 163 6.3.2 Electroluminescence transients of rubrene OLEDs . . . . . . 172 6.4 Charge transfer-state tuning by electric fields . . . . . . . . . . . . . 177 6.4.1 CT-state tuning via doping variation . . . . . . . . . . . . . 177 6.4.2 CT-state tuning via voltage . . . . . . . . . . . . . . . . . . 180 6.5 Excursus: Exciton-spin mixing for wavelength identification . . . . 183 6.5.1 Characteristics of the active film . . . . . . . . . . . . . . . . 184 6.5.2 Conception . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 6.5.3 Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 6.5.4 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188 6.5.5 Application demonstrations . . . . . . . . . . . . . . . . . . 192 6.5.6 All-organic device . . . . . . . . . . . . . . . . . . . . . . . . 195 6.5.7 Device limitations and prospects . . . . . . . . . . . . . . . . 198 7 Conclusion and outlook . . . . . . . . . . . . . . . . . 207 7.1 Charge-carrier injection into doped films . . . . . . . . . . . . . . . 207 7.2 Charge-carrier transport in hot OLEDs . . . . . . . . . . . . . . . . 208 7.2.1 Prospects for OLED lighting facing tristable behavior . . . . 209 7.2.2 Outlook: Accessing the hidden PDR 2 region . . . . . . . . . 210 7.3 Charge-carrier recombination and spin mixing . . . . . . . . . . . . 211 7.3.1 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 7.3.2 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 Bibliography. . . . . . . . . . . . . . . . . 215 Acknowledgements . . . . . . . . . . . . . . . . . 249 / Wer sich heute für ein neues Mobiltelefon entscheidet, kauft damit wahrscheinlich einen Bildschirm aus organischen Leuchtdioden (OLEDs). Durch ihre brillanten Farben, die hohe erreichbare Auflösung und eine vergleichsweise einfache Prozessierung werden OLEDs als relativ neue Bildschirmtechnologie in den nächsten Jahren wohl den größten Marktanteil ausmachen. Da sie nicht auf der starren Kristallstruktur klassischer Halbleiter beruhen und als planare Dünnschichtmodule produziert werden können, ermöglichen sie außerdem die Fertigung großer Flächenstrahler auf flexiblen Substraten – ein sehr attraktives Szenario für zukünftige Beleuchtungssysteme. Trotz dieser vielversprechenden Eigenschaften steht der Durchbruch der OLED-Technologie als Leuchtmittel noch aus und erfordert weitere Forschung. Die Dynamik der Ladungsträger (Elektronen und Löcher) in einer OLED charakterisiert wichtige Teile der Bauteilfunktion und ermöglicht daher das Verständnis grundlegender physikalischer Konzepte und Phänomene. Diese Arbeit leitet anhand dieser Beschreibung experimentelle Methoden und Bauteilkonzepte ab, um die Effizienz und Stabilität von OLEDs zu optimieren. OLEDs zeichnen sich dadurch aus, dass ein elektrischer Strom aus Ladungsträgern (Elektronen und Löchern) möglichst effizient unter Aussendung von Licht rekombiniert. Diesem Prozess geht eine Ladungsträgerinjektion und deren Transport zur Emissionsschicht voraus. Diese drei Aspekte werden in dieser Arbeit zusammenhängend diskutiert. Als erstes wird eine Methode vorgestellt, die Injektionswiderstände anhand eines einfachen Experimentes quantifiziert. Sie bildet eine wertvolle Möglichkeit, Injektionsschichten besser zu verstehen und zu optimieren. Anschließend wird der Ladungsträgertransport bei hohen elektrischen Strömen untersucht, wie sie für OLEDs als helle Beleuchtungselemente nötig sind. Hier werden elektro-thermische Effekte vorgestellt, die physikalische Grenzen für das Design und die Funktion von OLED Modulen bilden und deren plötzliches Versagen erklären. Abschließend wird die Dynamik der stark elektrostatisch gebundenen Ladungsträgerpaare, sogenannter Exzitonen, kurz vor deren Rekombination untersucht. Es werden verschiedene Möglichkeiten vorgestellt sie so zu manipulieren, dass sich das Abstrahlverhalten der OLED anhand bestimmter Anforderungen einstellen lässt.:List of publications . . . . . . . . . . . . . . . . . v List of abbreviations . . . . . . . . . . . . . . . . . ix 1 Introduction . . . . . . . . . . . . . . . . . 1 2 Fundamentals . . . . . . . . . . . . . . . . . 5 2.1 Light sources and the human society . . . . . . . . . . . . . . . . . 5 2.1.1 Human light perception . . . . . . . . . . . . . . . . . . . . 8 2.1.2 Physical light quantification . . . . . . . . . . . . . . . . . . 10 2.1.3 Non-visual light impact . . . . . . . . . . . . . . . . . . . . . 13 2.1.4 Implications for modern light sources . . . . . . . . . . . . . 15 2.2 Organic semiconductors . . . . . . . . . . . . . . . . . . . . . . . . 17 2.2.1 Molecular energy states . . . . . . . . . . . . . . . . . . . . . 18 2.2.2 Intramolecular state transitions . . . . . . . . . . . . . . . . 24 2.2.3 Molecular films . . . . . . . . . . . . . . . . . . . . . . . . . 31 2.2.4 Electrical doping . . . . . . . . . . . . . . . . . . . . . . . . 34 2.2.5 Charge-carrier transport . . . . . . . . . . . . . . . . . . . . 36 2.2.6 Exciton formation and recombination . . . . . . . . . . . . . 38 2.2.7 Exciton transfer . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.3 Organic light-emitting diodes . . . . . . . . . . . . . . . . . . . . . 44 2.3.1 Structure and operation principle . . . . . . . . . . . . . . . 44 2.3.2 Metal-semiconductor interfaces . . . . . . . . . . . . . . . . 47 2.3.3 Typical operation characteristics . . . . . . . . . . . . . . . . 49 2.4 Colloidal nanocrystal emitters . . . . . . . . . . . . . . . . . . . . . 52 2.4.1 Terminology: Nanocrystals and quantum dots . . . . . . . . 52 2.4.2 The particle-in-a-box model . . . . . . . . . . . . . . . . . . 54 2.4.3 Surface passivation . . . . . . . . . . . . . . . . . . . . . . . 55 3 Materials and methods . . . . . . . . . . . . . . . . . 57 3.1 Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 3.1.1 OLED materials . . . . . . . . . . . . . . . . . . . . . . . . . 57 3.1.2 Materials for photoluminescence . . . . . . . . . . . . . . . . 60 3.2 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 3.2.1 Thermal evaporation . . . . . . . . . . . . . . . . . . . . . . 62 3.2.2 Solution processing . . . . . . . . . . . . . . . . . . . . . . . 64 3.3 Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 3.3.1 Absorbance spectroscopy . . . . . . . . . . . . . . . . . . . . 66 3.3.2 Photoluminescence quantum yield . . . . . . . . . . . . . . . 66 3.3.3 Excitation sources . . . . . . . . . . . . . . . . . . . . . . . 67 3.3.4 Sensitive EQE for absorber materials . . . . . . . . . . . . . 68 3.4 Exciton-lifetime analysis . . . . . . . . . . . . . . . . . . . . . . . . 69 3.4.1 Triplet lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 69 3.4.2 Singlet-state lifetime . . . . . . . . . . . . . . . . . . . . . . 70 3.4.3 Lifetime extraction . . . . . . . . . . . . . . . . . . . . . . . 70 3.5 OLED characterization . . . . . . . . . . . . . . . . . . . . . . . . . 73 3.5.1 Current-voltage-luminance and quantum efficiency . . . . . . 73 3.5.2 Temperature-controlled evaluation . . . . . . . . . . . . . . . 74 4 Charge-carrier injection into doped organic films . . . . . . . . . . . . . . . . . 77 4.1 Ohmic injection contacts . . . . . . . . . . . . . . . . . . . . . . . . 79 4.2 Device architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 4.2.1 Conception . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 4.2.2 Device symmetry . . . . . . . . . . . . . . . . . . . . . . . . 80 4.2.3 Device homogeneity . . . . . . . . . . . . . . . . . . . . . . . 83 4.3 Resistance characteristics . . . . . . . . . . . . . . . . . . . . . . . . 84 4.3.1 Experimental results . . . . . . . . . . . . . . . . . . . . . . 84 4.3.2 Equivalent-circuit development . . . . . . . . . . . . . . . . 85 4.4 Impedance spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . 92 4.4.1 Measurement fundamentals . . . . . . . . . . . . . . . . . . 92 4.4.2 Thickness dependence . . . . . . . . . . . . . . . . . . . . . 93 4.4.3 Temperature dependence . . . . . . . . . . . . . . . . . . . . 95 4.5 Depletion zone variation . . . . . . . . . . . . . . . . . . . . . . . . 97 4.6 Molybdenum oxide as a case study . . . . . . . . . . . . . . . . . . 99 5 Charge-carrier transport and self-heating in OLED lighting . . . . . . . . . . . . . . . . .101 5.1 Joule self-heating in OLEDs . . . . . . . . . . . . . . . . . . . . . . 104 5.1.1 Electrothermal feedback . . . . . . . . . . . . . . . . . . . . 104 5.1.2 Thermistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 5.1.3 Cooling strategies . . . . . . . . . . . . . . . . . . . . . . . . 106 5.2 Self-heating causes lateral luminance inhomogeneities in OLEDs . . 108 5.2.1 The influence of transparent electrodes . . . . . . . . . . . . 108 5.2.2 Luminance inhomogeneities in large OLED panels . . . . . . 110 5.3 Electrothermal OLED models . . . . . . . . . . . . . . . . . . . . . 112 5.3.1 Perceiving an OLED as thermistor array . . . . . . . . . . . 112 5.3.2 The OLED as a single three-layer thermistor . . . . . . . . . 114 5.3.3 A numerical 3D model of heat and current flow . . . . . . . 116 5.4 OLED stack and experimental conception . . . . . . . . . . . . . . 118 5.5 The Switch-back effect in planar light sources . . . . . . . . . . . . 120 5.5.1 Predictions from numerical 3D modeling . . . . . . . . . . . 121 5.5.2 Experimental proof . . . . . . . . . . . . . . . . . . . . . . . 124 5.5.3 Variation of vertical heat flux . . . . . . . . . . . . . . . . . 127 5.5.4 Variation of the OLED area . . . . . . . . . . . . . . . . . . 131 5.6 Electrothermal tristabilities in OLEDs . . . . . . . . . . . . . . . . 133 5.6.1 Observing different burn-in schematics . . . . . . . . . . . . 133 5.6.2 Bistability and tristability in organic semiconductors . . . . 134 5.6.3 Experimental indications for attempted branch hopping . . . 138 5.6.4 Saving bright OLEDs from burning in . . . . . . . . . . . . 144 5.6.5 Taking another view onto the camera pictures . . . . . . . . 145 6 Charge-carrier recombination and exciton management . . . . . . . . . . . . . . . . .147 6.1 Optical down conversion . . . . . . . . . . . . . . . . . . . . . . . . 149 6.1.1 Spectral reshaping of visible OLEDs . . . . . . . . . . . . . 149 6.1.2 Infrared-emitting OLEDs . . . . . . . . . . . . . . . . . . . . 155 6.2 Dual-state Förster transfer . . . . . . . . . . . . . . . . . . . . . . . 158 6.2.1 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 6.2.2 Verification . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6.3 Singlet fission and triplet fusion in rubrene . . . . . . . . . . . . . . 161 6.3.1 Photoluminescence of pure and doped rubrene films . . . . . 163 6.3.2 Electroluminescence transients of rubrene OLEDs . . . . . . 172 6.4 Charge transfer-state tuning by electric fields . . . . . . . . . . . . . 177 6.4.1 CT-state tuning via doping variation . . . . . . . . . . . . . 177 6.4.2 CT-state tuning via voltage . . . . . . . . . . . . . . . . . . 180 6.5 Excursus: Exciton-spin mixing for wavelength identification . . . . 183 6.5.1 Characteristics of the active film . . . . . . . . . . . . . . . . 184 6.5.2 Conception . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 6.5.3 Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 6.5.4 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188 6.5.5 Application demonstrations . . . . . . . . . . . . . . . . . . 192 6.5.6 All-organic device . . . . . . . . . . . . . . . . . . . . . . . . 195 6.5.7 Device limitations and prospects . . . . . . . . . . . . . . . . 198 7 Conclusion and outlook . . . . . . . . . . . . . . . . . 207 7.1 Charge-carrier injection into doped films . . . . . . . . . . . . . . . 207 7.2 Charge-carrier transport in hot OLEDs . . . . . . . . . . . . . . . . 208 7.2.1 Prospects for OLED lighting facing tristable behavior . . . . 209 7.2.2 Outlook: Accessing the hidden PDR 2 region . . . . . . . . . 210 7.3 Charge-carrier recombination and spin mixing . . . . . . . . . . . . 211 7.3.1 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 7.3.2 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 Bibliography. . . . . . . . . . . . . . . . . 215 Acknowledgements . . . . . . . . . . . . . . . . . 249