Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / Currently there are many studies involving Nanocrystals (NC) incorporated into different types of matrices, including, matrices with porous surface. However, little information is known about the incorporation of NC in Diatomite matrix, and there is a lack of studies on the use of this material. In this context, zinc oxide (ZnO) semiconductor nanoparticles were prepared using two sol-gel methods, microwave and autoclave, at 100 ºC and 180 ºC, respectively. The nanocrystals of ZnO obtained by microwaves were incorporated into a matrix of diatomite (DE) in natura and modified. The modifiers used were APTES (3- aminopropyltriethoxysilane) and MPTS (3-Mercaptopropyltrimetoxysilane) for the study. The material DE/ ZnO, in which ZnO was synthesized with mercaptoethanol (ZnO: ME), was applied for the degradation of Methylene Blue (AM) dye, while ZnO, synthesized with diethyleneglycol (ZnO: DEG), was used for degradation of Rhodamine 6G dye (R6G) by photocatalysis. The results of UV-vis and FTIR spectra show that synthesis carried out by heating under adsorption method is more efficient for the incorporation of ZnO in Diatomite matrix. The FTIR spectra showed that the use of modifiers had no significant influence on the structure. According to the UV-Vis spectra, the DE / ZnO material was successful for application to AM photocatalysis and follows a pseudo-first order kinetics. The ZnO:DEG material used for degradation of R6G obtained higher efficiency due to the wide absorption in the UV-Vis of the photocatalyst material. / Atualmente existem diversos estudos envolvendo Nanocristais (NC) incorporados em matrizes de diferentes tipos, incluindo matrizes com uma superfície porosa. Entretanto, pouco se conhece sobre a incorporação de NC em matriz de Diatomita, além de ser limitado a presença de estudos sobre aplicação desse material. Neste contexto, foram preparadas nanopartículas semicondutoras de óxido de Zinco (ZnO) utilizando dois métodos sol-gel, por micro-ondas e autoclave, numa temperatura de 100 ºC e 180 ºC, respectivamente. Os nanocristais de ZnO obtidos por micro-ondas foram incorporados em matriz de Diatomita (DE) in natura e modificada. Foram utilizados os modificadores APTES (3-Aminopropiltrietoxissilano) e MPTS (3- Mercaptopropiltrimetoxissilano) para o estudo. O material de DE/ZnO, no qual o ZnO foi sintetizado com mercaptoetanol (ZnO:ME), foi aplicado para a degradação do corante Azul de Metileno (AM), enquanto o ZnO, sintetizado com dietilenoglicol (ZnO:DEG), não incorporado foi utilizado para degradação do corante Rodamina 6G (R6G) por fotocatálise. Os resultados de UV-Vis e FTIR mostram que a síntese realizada pelo método de adsorção sob aquecimento é mais eficiente para a incorporação de ZnO na matriz de Diatomita. Os espectros de FTIR mostraram que a utilização de modificadores não exerceu influência significativa na estrutura da DE. Segundo os espectros de UV-Vis, o material de DE/ZnO foi bem-sucedido para aplicação em fotocatálise de AM e segue uma cinética de pseudo-primeira ordem. O material de ZnO:DEG utilizado para degradação de R6G obteve maior eficiência devido a ampla absorção no UV-Vis do material fotocatalisador.

One third of world’s total energy is used in production of electricity and one fifth of the total electricity produced in the world is used in lighting. Hence, the materials that have high potential in the field of photovoltaic’s and photoluminescence have recently drawn special attention to meet the ever increasing energy demands. In this thesis, we have studied a few materials that hold tremendous promises in fabricating photovoltaics and photoluminescent devices. Any ferroelectric material is an efficient solar energy converter as it contains an the intrinsic dipolar field which can effectively separate the photo excited electron and hole. We have developed a few materials which possess inherent polarization efficiently absorb over a wide portion of the solar spectrum and hence can find application in the field of photovoltaics. Secondly, we also dealt with semiconductor nonmaterial’s which are technologically very important owing to their improved photoluminescence properties. We tried to improve their light emitting efficiency by engineering crystal structure in nanometer length scales. The thesis deals with such advanced energy materials and is divided in seven chapters. Chapter 1 provides a brief introduction to the fundamental concepts that are relevant in the subsequent chapters. The chapter is started with a brief scenario of current status of energy production and its usage. Next, we have discussed the prospects of ferroelectric materials in photovoltaic devices. This is followed by a brief background on ferroelectricity and related properties which we have studied subsequently. At the end of this chapter a brief overview of photoluminescence properties in semiconductor nonmaterial’s is presented. In this section we have addressed the particular issues that need to be taken care of in order to improve their light emission properties. Chapter 2 describes different experimental and theoretical methods that have been employed to carry out different studies presented in the thesis. Chapter 3 addresses the possibility of employing BaTiO3 (BTO) based composite perovskite oxides as a potent photovoltaic material. It is known that BTO can produce photocurrent upon excitation with suitable light source. However, inability of BTO to absorb sufficient sunlight owing to its near UV band gap prevents to make use of this material in photovoltaic devices. In order to reduce the band gap we have tried to tune the electronic structure at the band edge by doping non-d0 transition metal ions at Ti site. As it is known in the literature an isovalent substitution of Ti4+ stabilizes non-polar phase of BTO we employed a co-doping strategy to substitute tetravalent Ti with equal percentage of a trivalent and a pentavalent metal ion. Keeping in mind off-centering of Ti4+ is primary reason behind the large ferroelectric polarization of BTO, a judicious choice of co-dopant was necessary to minimize reduction of polarization due to replacement of Ti. We have found at least two pairs of co-dopants, namely Mn3+-Nb5+ and Fe3+-Nb5+ which at low doping concentration ( < 10%) effectively reduces the band gap of BTO without affecting its polarization to a large extent. We systematically increase the doping concentration of both the pair of dopants and found Mn3+-Nb5+ pair is more efficient over Fe3+-Nb5+ both in terms of reducing band gap and retaining the polarization of BTO. We have characterized the ferroelectric nature of all the doped compositions with the help of dielectric, polarization and pyroelectric measurements. We have also performed first principle density functional theory (DFT) calculations for an equivalent doped composition and addressed the nature of modulations of electronic structure at the band edges which is responsible for such large reduction of band gap. Chapter 4 deals with composite perovskite materials which posses large tetragonal distortions with reduced optical band gaps. Here we have exploited Cu-Nb and Cu-Ta pair which upon complete substitution of Ti of BTO leads to composite perovskites with enhanced tetragonal distortion of the perovskite lattice. For two resultant compositions, namely BaCu1/3Nb2/3O3 and BaCu 1/3Ta2/3O3 we have characterized the optical and ferroelectric properties. We found though these material possess small band gap (∼ 2 eV), these are not ferroelectric in nature. Results of second harmonic generation measurements and refinement of powder X-ray diffraction both establish Centro symmetric nature of these materials. We infer from these results that presence of large tetragonal distortion is a result of symmetric Jahn-Teller type distortion of Cu2+ and not due to off-centering of any of the metal ions in their MO6 octahedral geometries. In Chapter 5, we have considered the material SrTiO3 (STO) which is stable in cubic paraelectric phase at room temperature. But at the same time this material is considered as an incipient ferroelectric due to presence of an active polar vibrational mode which does not become completely soft even at temperature close to 0 K. While this polar vibrational mode can easily be frozen by making substitution at Sr site, a similar attempt by making substitution at Ti site failed earlier. Keeping in mind Ti is easier to substitute than Sr we employed same co-doping strategy that we have considered in Chapter 3. We found Mn- Nb and Mn-Ta co-dopants at low doping concentration are extremely useful in transforming incipient ferroelectric STO into a dipolar glass. We have characterized the glassy dipolar property of doped STO with the help of tem-perature dependent dielectric response of these material. At the same time we found these co-doped STO possess enhanced static dielectric constant at room temperature with favourable dielectric loss values in comparison to pure STO. We have also ad-dressed the origin of a glassy dipolar state with the help of DFT calculation performed on equivalent doped composition that we have considered for our experiments. In Chapter 6, we have considered another incipient ferroelectric material TiO2 in rutile phase which also possess polar vibrational mode at temperature close to 0 K. A lattice strain along the polar vibrational mode make symmetric non-polar structure unstable with respect to the distorted polar structure. In this context, we found two particular compositions FeTiTaO6 and CrTiTaO6 that are also stable in rutile phases at room temperature but possess similar strain due to presence of larger Fe or Cr and Ta in rutile lattice. Considering the fact these two composite rutile oxides are relaxer ferroelectric in nature, we critically evaluated the effect of the particular kind of strain that these materials introduce in rutile lattice. We also characterized relaxor ferroelectric property and optical band gap of these materials and commented on the potential of these materials in exploiting them in photovoltaic devices. Chapter 7 presents a unique strategy of making use of crystal defects in improving photoluminescent properties of semiconductor nanocrystals. We have shown defects when introduced in nanocrystals in a controlled protected manner efficiently overcome the problem of self absorption which is known to reduce quantum efficiency of emit-ted light. Controlling synthesis conditions we separately prepared CdS nanocrystals with and without intergrowth defects. We characterized the presence of the intergrowth defect with the help of high resolution transmission electron microscope (HRTEM) image. We have also characterized Stokes’ shifted PL emission and ultrafast charge carrier dynamics of these NCs with intergrowth defects. To support these experimental findings we have computed the electronic structures of model nanoclusters possessing similar intergrowth defects that has been observed in HRTEM images. We find that the presence of defects in a nanocluster particularly affect the position of the band edge. However our joint density of state calculation shows that contribution of these defect states to an absorption spectra is negligible. Thus presence of defect states at band edge ensures a Stokes’ shifted emission without affecting the position of absorption. In a separate section of this chapter we have shown apart from intergrowth defects presence of twin boundary also provide similar mid-gap states that can alter its’ optical proper-ties to large extent. In summary, we have studied a few bulk and nano-materials which can show improved photovoltaic and photoluminescence property. We investigated effect of external dopant ions on a classical ferroelectric material BaTiO3 and two incipient ferroelectric materials SrTiO3 and rutile TiO2. We have also shown that efficient defect engineering could be extremely useful in improving photoluminescent property of CdS nanocrystals which is a prototype of II-VI semiconductor nanomaterials. In a separate Appendix Chapter, we have shown an easy and efficient way to suppress coffee ring effect which takes place universally when a drop of colloidal suspension is dried on a solid substrate. We have shown temporary modification of hydropho-bicity of a glass substrate not only can suppress the coffee ring effect but also leaves the particle in a highly ordered self-assembled phase after completion of drying process

Non-ordered porous networks, so-called aerogels, can be achieved by the 3D assembly of quantum dots (QDs). These materials are well suited for photonic applications, however a certain quenching of the photoluminescence (PL) intensity is observed in these structures. This PL quenching is mainly attributed to the energy transfer mechanisms that result from the close contact of the nanoparticles in the network. Here, we demonstrate the formation of a novel aerogel material with non-quenching PL behaviour by non-classical, reversible gel formation from tetrazole capped silica encapsulated QDs. Monitoring of the gelation/degelation by optical spectroscopy showed that the optical properties of the nanocrystals could be preserved in the 3D network since no spectral shifts and lifetime shortening, which can be attributed to the coupling between QDs, are observed in the gels as compared to the original colloidal solutions. In comparison with other QD-silica monoliths, QDs in our gels are homogeneously distributed with a distinct and controllable distance. In addition we show that the silica shell is porous and allows metal ions to pass through the shell and interact with the QD core causing detectable changes of the emission properties. We further show the applicability of this gelation method to other QD materials which sets the stage for facile preparation of a variety of mixed gel structures.

We report on an efficient assembly approach to a variety of electrostatically stabilized all-inorganic semiconductor nanocrystals (NCs) via their linking with appropriate ions into multibranched gel networks. These all-inorganic non-ordered 3D assemblies can combine strong interparticle coupling which facilitates charge transport between the NCs with their diverse morphology, composition, size, and functional capping ligands. Moreover, the resulting dry gels (aerogels) are highly porous monolithic structures, which preserve the quantum confinement of their building blocks. The inorganic semiconductor aerogel made of 4.5 nm CdSe colloidal NCs, capped with iodide ions and bridged with Cd2+ ions, exhibited a surface area as high as 146 m2/g.

Bright emitters with photoluminescence in the spectral region of 800–1600 nm are increasingly important as optical reporters for molecular imaging, sensing, and telecommunication and as active components in electrooptical and photovoltaic devices. Their rational design is directly linked to suitable methods for the characterization of their signal-relevant properties, especially their photoluminescence quantum yield (Φf ). Aiming at the development of bright semiconductor nanocrystals with emission >1000 nm, we designed a new NIR/IR integrating sphere setup for the wavelength region of 600–1600 nm. We assessed the performance of this setup by acquiring the corrected emission spectra and Φf of the organic dyes |trybe, IR140, and IR26 and several infrared (IR)-emissive Cd₁₋ₓHgₓTe and PbS semiconductor nanocrystals and comparing them to data obtained with two independently calibrated fluorescence instruments absolutely or relative to previously evaluated reference dyes. Our results highlight special challenges of photoluminescence studies in the IR ranging from solvent absorption to the lack of spectral and intensity standards together with quantum dot-specific challenges like photobrightening and photodarkening and the size-dependent air stability and photostability of differently sized oleate-capped PbS colloids. These effects can be representative of lead chalcogenides. Moreover, we redetermined the Φf of IR26, the most frequently used IR reference dye, to 1.1 × 10⁻³ in 1,2-dichloroethane DCE with a thorough sample reabsorption and solvent absorption correction. Our results indicate the need for a critical reevaluation of Φf values of IR-emissive nanomaterials and offer guidelines for improved Φf measurements.

No description available.

The work presented in the thesis is focused on the synthesis of diverse colloidal semiconductor NCs in organic media, their surface design with tiny inorganic and hybrid capping species in solution phase, and subsequent assembling of these NC building units into two-dimensional close-packed thin-films and three-dimensional non-ordered porous superstructures.

The work presented in the thesis is focused on the synthesis of diverse colloidal semiconductor NCs in organic media, their surface design with tiny inorganic and hybrid capping species in solution phase, and subsequent assembling of these NC building units into two-dimensional close-packed thin-films and three-dimensional non-ordered porous superstructures.

In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. It is found that a lower barrier height of dielectric matrix influences to the lateral electron transport of the SiQDs in such dielectric matrix. PL results confirm that the band gap of surface oxidized SiQDs widens due to quantum confinement. The present results reveal that the strong peak (Q-peak) due to quantum confinement is more effective in the emission with increasing SiQD concentration. The surface oxide is believed to play an important role in the reduction of SiQD luminescence due to a trapped exiciton. It is concluded that SiQDs surface oxide accompanied by a SiO2 matrix may not provide a good passivation in very small SiQD size. However the energy band gap and conductivity of the SiQDs are tunablity, in the optimum range of SiQD size and concentration. This observation may be important for future nanoelectronics applications.

In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. It is found that a lower barrier height of dielectric matrix influences to the lateral electron transport of the SiQDs in such dielectric matrix. PL results confirm that the band gap of surface oxidized SiQDs widens due to quantum confinement. The present results reveal that the strong peak (Q-peak) due to quantum confinement is more effective in the emission with increasing SiQD concentration. The surface oxide is believed to play an important role in the reduction of SiQD luminescence due to a trapped exiciton. It is concluded that SiQDs surface oxide accompanied by a SiO2 matrix may not provide a good passivation in very small SiQD size. However the energy band gap and conductivity of the SiQDs are tunablity, in the optimum range of SiQD size and concentration. This observation may be important for future nanoelectronics applications.