Cette thèse s'inscrit dans le contexte de l'électronique de spin et traite plus particulièrement de l'interaction réciproque entre un courant polarisé en spin et l'aimantation des structures magnétiques. Au cours de ce travail, les équations du transport diffusif dépendant du spin ont été couplées de façon auto-cohérente à l'équation de la dynamique d'aimantation dans l'approche micromagnétique au sein du code éléments finis. Cet outil numérique est appliqué à l'étude de la dynamique de parois de domaines dans différentes géométries sous l'action d'un courant polarisé. Il a permis de mettre en évidence plusieurs nouveaux phénomènes liés à l'interaction mutuelle entre l'aimantation et les spins des électrons. Pour des rubans à section rectangulaire, l'impact de cette interaction, habituellement négligée dans les modèles simplifiés, est quantifié via le calcul de la vitesse de déplacement de parois et du courant critique de Walker. Ces paramètres ont été étudiés en fonction de la largeur de paroi, du courant appliqué et des longueurs caractéristiques du transport polarisé en spin. L'augmentation du paramètre de non-adiabaticité du système, liée à l'augmentation du gradient d'aimantation ainsi qu'à une forte non-localité du modèle couplé, a été démontrée. Pour des fils à section circulaire et à diamètre modulable, une contribution supplémentaire à la non-adiabaticité du système liée, à la géométrie confinée, a été mise en évidence. Puis, les différents régimes dynamiques ainsi que les conditions de dépiégage de la paroi ont été caractérisés en fonction de la taille de constrictions. / In the context of spintronics this thesis studies the mutual interaction between a spin polarised current and the magnetization of magnetic structures. During this work, the diffusive spin transport equations were coupled in a self-consistent manner with the magnetization dynamics equations in the micromagnetic approach in our homemade finite element code. This numerical tool applied to the study of domain walls dynamics in different geometries under the action of spin polarized current highlighted several new phenomena related to the mutual interaction between the magnetization and the spins of electrons. For rectangular cross section stripes, the impact of this interaction, usually neglected in simplified models, is quantified by the computation of the domain wall velocity and the Walker critical current. These quantities were studied as a function of the domain wall width, the applied current, and the spin polarised transport characteristic lengths. Increasing the non-adiabatic parameter of the system related to the increase in the magnetization gradient and a strong non-locality of the coupled model was demonstrated. For circular cross section wires with a modulated diameter, an additional contribution to the non-adiabaticity of the system related to the confined geometry is highlighted. Then the different dynamic regimes and domain wall unpinning conditions are characterised according to the constriction size.

Avec la diminution du nœud de la technologie CMOS, la puissance statique et dynamique augmente spectaculairement. It est devenu l'un des principaux problèmes en raison de l'augmentation du courant de fuite et de la longue distance entre les mémoires et les circuits logiques. Au cours des dernières décennies, les dispositifs de spintronique, tels que la jonction tunnel magnétique (JTM) écrit par transfert de spin, sont largement étudiés pour résoudre le problème de la puissance statique grâce à leur non-volatilité. L'architecture logic-in-memory (LIM) hybride permet de fabriquer les dispositifs de spintronique au-dessus des circuits CMOS, réduisant le temps de transfert et la puissance dynamique. Cette thèse vise à la conception de circuits logiques et mémoires pour le système de faible puissance, en combinant les technologies JTM et CMOS. En utilisant un modèle compact JTM et le design-kit CMOS de STMicroelectronics, nous étudions les circuits hybrides MTJ/CMOS de 1-bit et multi-bit, y compris les opérations de lecture et d'écriture. Les méthodes d'optimisation sont également introduites pour améliorer la fiabilité, ce qui est extrêmement important pour les circuits logiques où les blocs de correction d'erreur ne peuvent pas être facilement intégrés sans sacrifier leurs performances ou augmenter la surface de circuit. Nous étendons la structure MTJ/CMOS hybride de multi-bit à la conception d’une mémoire MRAM avec les circuits périphériques simples. Basés sur le concept de LIM, les circuits logiques/arithmétiques non-volatiles sont conçus. Les JTMs sont intégrés non seulement comme des éléments de stockage, mais aussi comme des opérandes logiques. Tout d'abord, nous concevons et analysons théoriquement les portes logiques non-volatiles (PLNVs) comprenant NOT, AND, OR et XOR. Ensuite, les additionneurs complets non-volatiles (ACNVs) de 1-bit et 8-bit sont proposés et comparés avec l'additionneur classique basé sur la technologie CMOS. Nous étudions l'effet de la taille de transistor CMOS et des paramètres de JMT sur les performances d’ACNV. De plus, nous optimisons l’ACNV sous deux faces. Premièrement, un circuit de détection (mode de tension) de très haute fiabilité est proposé. Après, nous proposons de remplacer le JTM à deux électrodes par un JTM à trois électrodes (écrit par transfert de spin assisté par l’effet Hall de spin) en raison du temps d'écriture et de la puissance plus petit. Basé sur les PLNVs et ACNVs, d'autres circuits logiques peuvent être construits, par exemple, soustracteur non-volatile. Enfin, une mémoire adressable par contenu non-volatile (MACNV) est proposée. Deux décodeurs magnétiques visent à sélectionner des lignes et à enregistrer la position de recherche dans un état non-volatile. / With the shrinking of CMOS (complementary metal oxide semi-conductor) technology, static and dynamic power increase dramatically and indeed has become one of the main challenges due to the increasing leakage current and long transfer distance between memory and logic chips. In the past decades, spintronics devices, such as spin transfer torque based magnetic tunnel junction (STT-MTJ), are widely investigated to overcome the static power issue thanks to their non-volatility. Hybrid logic-in-memory (LIM) architecture allows spintronics devices to be fabricated over the CMOS circuit plane, thereby reducing the transfer latency and the dynamic power dissipation. This thesis focuses on the design of hybrid MTJ/CMOS logic circuits and memories for low-power computing system.By using a compact MTJ model and the STMicroelectronics design kit for regular CMOS design, we investigate the hybrid MTJ/CMOS circuits for single-bit and multi-bit reading and writing. Optimization methods are also introduced to improve the reliability, which is extremely important for logic circuits where error correction blocks cannot be easily embedded without sacrificing their performances or adding extra area to the circuit. We extend the application of multi-context hybrid MTJ/CMOS structure to the memory design. Magnetic random access memory (MRAM) with simple peripheral circuits is designed.Based on the LIM concept, non-volatile logic/arithmetic circuits are designed to integrate MTJs not only as storage elements but also as logic operands. First, we design and theoretically analyze the non-volatile logic gates (NVLGs) including NOT, AND, OR and XOR. Then, 1-bit and 8-bit non-volatile full-adders (NVFAs), the basic elements for arithmetic operations, are proposed and compared with the traditional CMOS-based full-adder. The effect of CMOS transistor sizing and the MTJ parameters on the performances of NVFA is studied. Furthermore, we optimize the NVFA from two levels. From the structure-level, an ultra-high reliability voltage-mode sensing circuit is used to store the operand of NVFA. From the device-level, we propose 3-terminal MTJ switched by spin-Hall-assisted STT to replace the 2-terminal MTJ because of its smaller writing time and power consumption. Based on the NVLGs and NVFAs, other logic circuits can be built, for instance, non-volatile subtractor.Finally, non-volatile content addressable memory (NVCAM) is proposed. Two magnetic decoders aim at selecting a word line to be read or written and saving the corresponding search location in non-volatile state.

Un des challenges actuels dans le domaine de la spintronique est son extension vers des systèmes dits de nanospintronique, où les dimensions sont réduites à l’échelle du nanomètre, avec comme système modèle un nano-aimant unique. La découverte de nouveaux moyens pour contrôler l’aimantation dans ces nano-aimants, pourrait avoir des applications pour les technologies de l’information. Dans le cadre de cette thèse nous nous sommes intéressés plus particulièrement aux nouveaux effets liés à l’accumulation de charges électriques au sein de films magnétiques ultraminces, aussi appelés effets de champ électrique. Nous avons étudié l’effet de l’application d’un champ électrique sur les différents paramètres magnétiques propres à nos films, via des mesures de magnéto-transport et magnéto-optique. Ces mesures ont été conduites sur une tri-couche de Pt/Co/AlOx présentant un gradient d’oxydation pour l’alumine. L’oxydation de cette interface étant contrôlée à l’échelle nanométrique, une large gamme de paramètres magnétiques est donc accessible au sein d’un seul et même échantillon. Ceci représente un très bon outil d’étude pour les différents phénomènes intervenant dans ces tri-couches. La caractérisation fine de ces échantillons a permis de mettre en évidence une zone pour laquelle des propriétés très intéressantes ont été observées (domaines spontanément désaimantés, bulles skyrmioniques). La proximité de la température de Curie (Tc) de cette zone avec la température de mesure (ambiante) en est la cause principale. Ces bulles skyrmioniques font actuellement l’objet de beaucoup de recherche au niveau national et international, étant considérées comme potentiellement très attractives pour des applications de type mémoire et logique magnétique. L’originalité de ce travail de thèse a été de montrer que ces bulles skyrmioniques sont fortement influencées par le champ électrique, dû au fort contrôle des propriétés magnétiques de cette zone (anisotropie, champ coercitif, aimantation à saturation, facteur DMI). Nous proposons le design d’un interrupteur nanométrique permettant de créer ou effacer ces bulles skyrmioniques grâce à un champ électrique, levant ainsi un verrou important pour la mémoire/logique magnétique basée sur ces bulles skyrmioniques. La potentialité de ces nouveaux effets pour réaliser un renversement ’aimantation/une création de bulles skyrmioniques, assistés par champ électrique, a été étudiée à des plages de températures et d’anisotropies adaptées pour ces applications (température ambiante). / A current challenge in the field of spintronics is the development of functional nanospintronics systems, in which the dimensions of the device are confined to the nanometer scale. The model system is called a single nano-magnet. New possible routes to control its magnetisation could be useful for many applications, in particular, those in the area of information technology. During this PhD, we chose to study the particular effects that are linked to the electric charge accumulation in the nano-magnet. This effect, also known as the electric field effect, were studied on the different magnetic properties of our films. They were probed by magneto-transport and magnetooptical measurements. These measurements were conducted on asymmetric Pt/Co/AlOx trilayers. These structures were sputter-deposited on a wedge shape for the alumina. This leadingto a nanometric control of the oxidation degree of the interface. Then, a wide range of magnetic parameters is available on a unique sample. Systematic caracterization of these structures showed an interesting zone for magnetic properties (spontaneous striped domains, skyrmionic bubbles). The observation of this type of magnetic object is directly linked to the weak Curie temperature(Tc) of this zone (close to room temperature. Skyrmionic bubbles are subject to lots of international studies. They are potentially attractive for memories or logic devices development. The key result of this PhD was to show the strong dependence of magnetic skymionic bubbles with electric field application. The full electrical switch of these objects has been achieved, due to the strong electrical control of the different magnetic properties. To induce electric-field assisted magnetisation reversal/skyrmionic bubbles nucleation, studies were performed for an adapted range of temperatures and anisotropies (room temperature).

[pt] Esta tese investiga as propriedades eletrônicas de sistemas nanoscópicos com interações de muitos corpos, dando origem ao efeito Kondo. Primeiramente estudamos a transição SU(4)-SU(2) devido a um campo magnético externo e as propriedades de filtro de spin de um nanossistema de dois pontos quânticos capacitivamente acoplados. A transição é caracterizada pela diferença entre as polarizações de spin da ocupação eletrônica nos dois pontos quânticos, como uma função do potencial de porta aplicado sobre os pontos quânticos. Apesar do fato de que o campo magnético externo quebra a simetria SU(4) do Hamiltoniano, o estado fundamental a preserva, como uma propriedade emergente, na região do espaço de parâmetros onde os elétrons não estão polarizados. As propriedades de filtro de spin devido à população eletrônica spin polarizada nos pontos quânticos também é discutida. Estas propriedades são estudadas usando o formalismo dos operadores de projeção, que descreve de forma muito acurada a física associada ao estado fundamental dos sistemas Kondo. No capítulo subsequente, analisamos os efeitos da interação spin-órbita num ponto quântico conectado a contatos, representados pelo modelo da impureza de Anderson no efeito Kondo. Contrariamente ao resultado prévio de vários outros autores, nós mostramos que a interação spin-órbita reduz exponencialmente a temperatura Kondo enquanto a ação da interação no próprio ponto quântico pode ser um mecanismo de destruição do regime Kondo, conforme quebra a simetria SU(2). Usando o modelo de Anderson com acoplamento spin-órbita nós propomos um transistor de spin feito de um ponto quântico conectado a uma nanofaixa submetida à interação spin-órbita Rashba, depositada sobre um substrato ferromagnético. O ponto quântico também é conectado a dois contatos metálicos laterais, através do qual a corrente flui ao longo do sistema. A interação spin-órbita Rashba cria um mecanismo de inversão do spin no ponto quântico. Nós mostramos que o sistema é capaz de operar como um transistor de spin. / [en] This thesis investigates the electronic properties of nanoscopic systems under the presence of many body interactions, given rise to the Kondo effect. Firstly we studied the SU(4)-SU(2) crossover driven by an external magnetic field and the spin-filter properties of a capacitively coupled double quantum dot nanosystem. The crossover is characterized by the difference between the spin polarization of the electronic occupation at the double quantum dot, as a function of the gate potential applied to the quantum dots. Despite the fact that the external magnetic field breaks the SU(4) symmetry of the Hamiltonian, the ground state preserves it, as an emergent property, in a region in the parameter space where the electron are not polarized. The spinfilter properties due the spin polarized electronic population at the dots is also discussed. These properties are studied using the projector projection operator approach, which describes very accurately the physics associated to the ground state of Kondo systems. In a subsequent chapter, we analyze the effect of the spin-orbit interaction in a quantum dot connected to leads, represented by the Anderson impurity model on the Kondo effect. Contrary to several other authors previous results, we show that the Rashba spin-orbit interaction exponentially reduces the Kondo temperature while the action of the interaction on the quantum dot itself could be a mechanism of destroying the Kondo regime, as it breaks SU(2) symmetry. Using the Anderson model with spin-orbit coupling we propose a spin transistor device made of a quantum dot connected to a Rashba spinorbit interacting nanoribbon, deposited on a ferromagnetic substrate. The quantum dot is also connected to two lateral metallic contacts, through which the current flows along the system. The Rashba spin-orbit interaction creates a spin-flip mechanism at the quantum dot. We show that the system is capable of operating as a spin-transistor.

The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models. I first explored the impact of edge functionalization and doping on the stabilities, electronic, and magnetic properties of silicene nanoribbons (SiNRs) and revealed that the modified structures indicate remarkable spin gapless semiconductor and half-metal behaviors. In order to open and tune a band gap in silicene, SiNRs were perforated with periodic nanoholes. It was found that the band gap varies based on the nanoribbon’s width, nanohole’s repeat periodicity, and nanohole’s position due to the quantum confinement effect. To continue to take advantage of quantum confinement, I also studied the electronic and magnetic properties of hydrogenated silicene nanoflakes (SiNFs). It was discovered that half-hydrogenated SiNFs produce a large spin moment that is directly proportional to the square of the flake’s size. Next, I studied the adsorption behavior of various gas molecules on SiNRs. Based on my results, the SiNR could serve as a highly sensitive gas sensor for CO and NH3 detection and a disposable gas sensor for NO, NO2, and SO2. I also considered adsorption behavior of toxic gas molecules on boron carbide (BC3) and found that unlike graphene, BC3 has good sensitivity to the gas molecules due to the presence of active B atoms. My findings divulged the promising potential of BC3 as a highly sensitive molecular sensor for NO and NH3 detection and a catalyst for NO2 dissociation. Finally, I scrutinized the interactions of CO2 with lithium-functionalized germanene. It was discovered that although a single CO2 molecule was weakly physisorbed on pristine germanene, a significant improvement on its adsorption energy was found by utilizing Li-functionalized germanene as the adsorbent. My results suggest that Li-functionalized germanene shows promise for CO2 capture.

Afin de concurrencer les mémoires à accès aléatoire de type DRAM actuellement sur le marché, les mémoires magnétiques ont depuis quelques années fait l'objet de nombreuses études afin de les rendre aussi performantes que possible. Dans ce contexte, les jonctions tunnel magnétiques à double barrière pourraient présenter des avantages significatifs en termes de vitesse de lecture et de consommation électrique. Nous avons en effet fait la démonstration que les structures à double barrière permettent, pour une configuration antiparallèle des aimantations des polariseurs, d'accroître les effets de transfert de spin assurant ainsi des courants d'écriture faibles. Dans la configuration parallèle des polariseurs, le phénomène est inversé et le couple par transfert de spin résultant est considérablement réduit. Cela permettrait de lire l'information plus rapidement en utilisant des tensions du même ordre de grandeurs que celles utilisées pour l'écriture. Nous avons par ailleurs proposé une méthode d'analyse permettant de caractériser les deux barrières tunnel par des mesures électriques en pleine plaque, ce qui facilite le développement des matériaux et atteste des propriétés électriques attendues avant nanofabrication. / Since a few years, magnetic memories have been extensively studied in order to compete with already existing Random Access Memories such as DRAM. In this context, double barrier magnetic tunnel junctions may have significant assets in terms of reading speed and electrical consumption. In fact, we demonstrated that spin transfer torque is enhanced when polarizers magnetizations are antiparallel, thus yielding a decrease of the writing current. On the contrary, when polarizers are parallel, spin transfer torque is drastically shrinked, thus allowing fast reading of the storage layer state at a voltage as large as the writing voltage. Moreover, we proposed an analysis method to characterize both tunnel barriers by full-sheet electrical measurements, leading to considerable gain of time in material developpement.

Afin de réduire la consommation de puissance des futures générations de systèmesélectroniques, une solution est d’intégrer de la non-volatilité au sein même des cellulesmémoires. Dans cette optique, l’utilisation du retournement de l’aimantation d’un matériauferromagnétique comme support de l’information a été utilisée initialement dans un conceptde mémoire, la MRAM. La dernière évolution de cette technologie, la SOT-RAM, utilise desphénomènes nouveaux appelés SOTs afin de contrôler la direction de l’aimantation. Parrapport aux générations précédentes (STT-MRAM notamment), elle devrait permettred’améliorer la vitesse d’écriture en conservant une endurance adaptée pour des utilisations enmémoires cache où en mémoire centrale. Le terme SOTs est une dénomination généraledésignant l’ensemble des effets, encore mal connus, liés au couplage spin-orbite et permettantle retournement de l’aimantation d’une cellule mémoire.Ce travail de thèse a eu pour objectif d’étudier les SOTs via un système expérimental demesure quasi-statique basé sur les effets Hall extraordinaires et planaires. Sonimplémentation et la méthode d’analyse associée, ainsi que les considérations théoriquesnécessaires à l’interprétation des résultats sont détaillées dans ce manuscrit. Il a été montréque le retournement de l’aimantation dans des systèmes à aimantation perpendiculaire à basede cobalt-platine ne peut être expliqué par les modèles simples considérés jusqu’à présentdans la littérature. En effet, il a été mis en évidence qu’au moins deux effets simultanés doiventêtre pris en compte pour expliquer les phénomènes observés. Par ailleurs, ceux-ci présententune sensibilité différente à la fois à une altération de la structure cristalline et à une variationde température. / In order to reduce power consumption in next generations’ electronic devices, one potentialsolution is to implement non-volatility in memory cells. In this goal, the magnetizationswitching of a ferromagnetic material has been used in a memory concept: the MRAM. Thelatest development of this technology, called SOT-RAM, is based on new phenomena calledSOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedentgenerations (STT-MRAM), it should achieve a higher operating speed and an enduranceadapted for cache and main memories applications. SOTs is a generic term referring to all theeffects, linked to the spin-orbit interaction, and that enable magnetization reversal. They areyet not perfectly understood.The main objective of this Ph.D. was then to study these SOTs through a quasi-staticexperimental measurement setup based on anomalous and planar Hall effects. Itsimplementation and the associated analysis method, as well as the required theoreticalconsiderations for data interpretation are detailed in this manuscript. It has been highlightedthat magnetization switching in perpendicularly magnetization cobalt-platinum systemscannot be explained by the simple models considered thus far in the literature. As a matter offact it has been evidenced that at least two effects have to be considered in order to explainobserved phenomena. In addition, they present different susceptibility both to a modificationof the crystal structure and to a temperature change.

Nous avons étudié par STM, SQUID, Réflectivité X, Diffraction des rayons X, absorption optique et XAS des échantillons de Fe(phen)2(NCS)2 et Fe{[3,5-dimethylpyrazolyl]3BH}2 déposé par évaporation thermique sur des substrats de Cu(100), Co(100) et SiO2, et comparé avec des échantillons en poudre. Nous avons confirmé l'existence de l'effet de piégeage d'état de spin induit par les rayons X (SOXIESST), et étudié ses propriétés, en particulier dynamiques. Celui-ci dépend de l'intensité et de la structure du faisceau X appliqué, et est non-résonant. Nous suggérons que son efficacité est influencée également par les états de transfert de charge métal-ligand (MLCT). L'étude des molécules isolées a montré que l'on pouvait les faire transiter par une impulsion électrique, et construire ainsi des dispositifs memrésistifs, mais seulement si l'influence du substrat est suffisamment réduite. À l'aide d'un modèle thermodynamique simple, nous avons alors étudié les couches minces et montré que la coopérativité est réduite et que la température de transition est modifiée (plus grande pour la Fe-phen, plus faible pour la Fe-pyrz). Enfin, nous utilisons ces résultats pour construire des dispositifs multicouche verticaux Au/Fe-phen/Au dont les propriétés électriques, d'après nos résultats préliminaires, sont dépendantes des stimuli extérieurs (température, champ magnétique). Notamment, ils présentent un effet « diode » à la transition de spin. / We have studied by STM, SQUID, X-ray reflectivity, X-ray diffraction, optical absorption and XAS Fe(phen)2(NCS)2 and Fe{[3,5-dimethylpyrazolyl]3BH}2 samples deposited by thermal evaporation on Cu(100), Co(100) and SiO2 substrates, and compared with results on powder samples. We have confirmed the existence of the soft X-ray induced excited spin state trapping (SOXIESST), and investigated its properties, in particular dynamic aspects. The effect is sensitive to the intensity and the structure of the applied X-ray beam, and is non-resonant. We suggest that its efficiency is also governed by metal-ligand charge transfer states (MLCT). The study of single molecules has revealed that they could be switched by voltage pulses, and by this way building memristive devices, but only if the influence of the substrate is sufficiently reduced. We have then investigated thin films with the help from a simple thermodynamic model, and evidenced that the cooperativity was reduced and the transition temperature is modified (higher for Fe-phen, and lower for Fe-pyrz). Finally, we use these results to build multilayer vertical devices Au/Fe-phen/Au, and its electrical properties depends, according to our preliminary results, on the external stimuli (temperature, magnetic field). Notably, they present a “diode” effect at the spin transition.

Neste trabalho, apresentamos o resultado de nossas investigações em amostras de poços quânticos parabólicos (PQW) de AlGaAs crescidas em substratos de GaAs por MBE (Molecular Beam Epitaxy). Nossos estudos se concentram nas implicações da variação do fator g de Landé ao longo da estrutura dos PQW, a qual ocorre em virtude da dependência dessa grandeza com respeito ao conteúdo de Al na liga AlGaAs. Essas implicações são analisadas através de medidas de transporte eletrônico (medidas de Hall e do efeito Shubnikov-de Haas). As medidas de Subnikov-de Haas a temperaturas da ordem de dezenas a centenas de milikelvin com variação do ângulo de inclinação se mostram um eficiente método para a determinação do fator g. Distinguimos não só o fator g determinado pelas propriedades da liga, como também uma contribuição oriunda de efeitos de muitos corpos (contribuição de troca). Por outro lado, as medidas de Hall nos revelam um comportamento anômalo, que mostramos não ter origem no conhecido "efeito Hall anômalo" presente em materiais ferromagnéticos, nem em efeitos de ocupação de múltiplas sub-bandas. Atribuímos o fenômeno a um efeito "válvula de spin", conseqüente da variação espacial do fator g. Nossas observações nos permitem a idealização de um transistor "válvula de spin", prescindindo do emprego de materiais magnéticos. / We present the results of our investigations concerning MBE grown AlGaAs/GaAs parabolic quantum well (PQW) samples. We focused on the variation of the Landé g factor along the structure of the PQWs, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The implications are studied by Hall and Shubnikov-de Haas measurements. Shubnikov-de Haas measurements at temperatures of the order of tenths to hundreds of milikelvin with variation of the tilt angle are shown to be an efficient method for the determination of the g factor. We could distinguish not only the alloy g factor, but its many body contribution (exchange contribution). On the other hand, Hall measurements exhibit an unusual behavior, which we prooved it has no relation neither to the well known "anomalous Hall effect", a characteristic of ferromagnetic materials, nor to a multi subband occupation effect. We atribute such behavior to a "spin valve effect", caused by the spatial variation of the g factor. Our observations allow us to idealize a "spin valve" transistor, without any ferromagnetic material in its structure.

Time-resolved Faraday rotation (TRFR) is a pulsed laser pump/probe optical measurement used to characterize electron spin dynamics in semiconductor materials. A Mach-Zehnder type interferometer with orthogonally polarized arms is presented as a device for TRFR measurement that is superior to optical bridge detection, the traditional measuring technique, since Faraday rotation can be passively optically amplified via interference. Operation of the interferometer is analyzed under ideal conditions. Corrections to the ideal case stemming from imperfectly aligned optics, finite polarization extinction ratios, and an imperfect recombination optic are analyzed using a matrix transformation approach. The design of the interferometer is presented and chronicled. A description of the single-beam active control system utilized to stabilize the interferometer by continuous corrections to the optical path length of one arm with a piezoelectric actuator is given. Optical amplification by increasing the power in either arm of the interferometer is demonstrated and TRFR measurements taken with the interferometer at ambient temperatures are compared with measurements taken with the optical bridge. We find the interferometer to offer a detection limit on the order of 50 mrad at room temperature, which is five times more sensitive than the optical bridge. Isolation and stabilization of the interferometer were also successful in reducing signal noise to a level comparable with the optical bridge. Our results demonstrate that the interferometer is a better detection device for Faraday rotation under ambient conditions. In the immediate future, improvements to the control system should be made and experiments should be performed with high-quality samples at cryogenic temperatures to confirm that the interferometer performs as favorably under those conditions.