Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated. The Al2O3 films were grown by atomic layer deposition using trimethylaluminum and water. The cycle-by-cycle etching was monitored throughout the entire atomic layer etching process time using in situ and in real-time spectroscopic ellipsometry. The studies revealed that the sequential surface reactions were self-limiting versus reactant exposure. Spectroscopic ellipsometry analysis also confirmed the linear removal of Al2O3. Various process pressures ranging from 50 to 200 Pa were employed for Al2O3 etching. The Al2O3 etch rates increased with process pressures: Al2O3 etch rates of 0.92, 1.14, 1.22, and 1.31 Å/cycle were obtained at 300 °C for process pressures of 50, 100, 150, and 200 Pa, respectively. The Al2O3 etch rates increased with the temperature from 0.55 Å/cycle at 250 °C to 1.38 Å/cycle at 350 °C. Furthermore, this paper examined the temperature dependence of the rivalry between the removal (Al2O3 etching) and growth (AlF3 deposition) processes using the reactants trimethylaluminum and hydrogen fluoride. The authors determined that 225 °C is the transition temperature between AlF3 atomic layer deposition and Al2O3 atomic layer etching. The high sensitivity of in vacuo x-ray photoelectron spectroscopy allowed the investigation of the interface reactions for a single etching pulse as well as the initial etch mechanism. The x-ray photoelectron spectroscopy measurements indicated that the fluorinated layer is not completely removed after each trimethylaluminum exposure. The Al2O3 atomic layer etching process mechanism may also be applicable to etch other materials such as HfO2.

Fresh water scarcity is an alarming issue for communities across the globe. The development of water recycling and reuse technologies has become crucial in expanding the limited water resources. Reverse osmosis (RO) is among the key processes that can treat wastewater to meet potable water reuse standards. Despite the advancements in RO membrane technologies, many challenges persist regarding the operation and maintenance of RO membranes, such as membrane fouling. Extensive research investigations have focused on developing RO membrane modifications to combat the decreased performance due to fouling. Polyethylenimine (PEI) is a promising polymer used for enhancing the anti-fouling properties of thin film composite (TFC) RO membranes. PEI, a positively charged polymer with high charge density, is commonly grafted on TFC RO membrane surfaces to produce smoother, more hydrophilic membranes to minimize fouling. However, little research is available on the optimal PEI placement within the composite RO membrane layers for enhancing antifouling properties. The current study aimed to investigate whether alternative positions within the membrane layers could yield better anti-fouling performance compared to incorporation PEI on the membrane surface. Unmodified (i.e., control) and PEI-modified TFC RO membranes were fabricated in the laboratory. The PEI-modified membranes were produced in two variations with regards to the position of PEI in the composite membrane layer. The first variation, named PEI-1, involved immersing the polysulfone (Psf) support layer of the membrane in an aqueous PEI solution, before the active polyamide (PA) layer was formed. The second variation, named PEI-2, consisted of immersing the fully formed TFC RO membrane in an aqueous PEI solution to incorporate PEI on the surface of the active PA layer. The PEI used in the study for membrane modification had branched configuration with molecular weight of 1200 g/mole. The laboratory-scale TFC RO membranes produced herein were characterized and tested for water flux, salt rejection, and fouling behavior. The water flux and salt rejection, commonly referred to as permselectivity, of all the membranes produced were evaluated in a crossflow filtration unit. On the other hand, the fouling tests were conducted in a dead-end membrane filtration unit because of operational limitations of the crossflow unit. The PEI-1 membrane produced a water flux of 18.7 LMH (L/m2hr) and a stable salt rejection of 82.1%. The PEI-2 membrane resulted in a water flux of 22.4 LMH and a salt rejection of 85.2%. These results indicate that incorporating PEI on the membrane PA active surface layer achieved better permselectivity compared to PEI-1, which is the membrane with PEI incorporated inside the structure (i.e., incorporated on the Psf support layer). However, both PEI-modified membranes exhibited lower permselectivity performance compared to the unmodified control membrane, which produced a water flux of 23.9 LMH and salt rejection of 88.2%. To test fouling of the unmodified and PEI modified RO membranes, bovine serum albumin (BSA) was chosen as a model foulant based on preliminary investigations conducted herein to compare BSA to sodium alginate. After the foulant was introduced in the feed, the unmodified membrane exhibited a 31.8% total fouling ratio, the decrease in flux from the foulant solution compared to running clean DI water. However, a 90.7% flux recovery ratio was achieved when a final DI water rinse was performed. The PEI-1 membrane had a 39.7% total fouling ratio and a 81.6% flux recovery ratio after rinsing with DI water. The PEI-2 membrane showed a 43.1% total fouling ratio as a result of BSA fouling and a 94% flux recovery ratio when rinsed with DI water at the end of the fouling test. Water contact angle (WCA) analysis confirmed that the PEI-2 membrane had the most hydrophilic surface (WCA 25.1°) compared to the control membrane (WCA 52.9°). The higher hydrophilicity of PEI-2 aligns with its higher flux recovery results, which indicated reduced membrane fouling. Furthermore, the PEI-2 membrane had a drastically lower WCA than those reported in the literature for PEI-modified membranes, which ranged from (63° – 80°). In conclusion, the increased flux recovery and surface hydrophilicity of the PEI-2 membrane indicated that the best anti-fouling performance would likely be obtained when PEI is grafted onto the surface of the active PA membrane surface. Future research is warranted to optimize the PEI-2 membrane by exploring the effect of PEI concentration, molecular weight, and structural configuration (i.e., branched versus linear), on anti-fouling performance of the membranes.

The increase in the magnitude of local electric fields through resonances of plasmonic excitations in metallic nanoparticles is a major area of current optical research. This dissertation is focused on plasmon-enhanced second harmonic generation of organic ionic self-assembled films via localized surface plasmon resonance of gold nanorods. By matching the plasmon resonance of the gold nanorods to the wavelength of the fundamental light, it is possible to greatly enhance the SHG efficiency. To demonstrate this, the surface of the gold nanorods was functionalized with a nonlinear-optical (NLO) polymer, PCBS, via the layer-by-layer method and deposited on a polymer thin film created on a glass substrate using the ionic self-assembled multilayer (ISAM) method. The sample fabrication is divided into two parts: gold nanorod synthesis and functionalization. The gold nanorods were synthesized by the seed-mediated method with varying amounts of silver ions to control their LSPR wavelengths. The functionalization started by replacing the original thick CTAB bilayer on the surface of the gold nanorods by a thin PAH-DTC layer via dialysis. The nanorods were then alternately coated with PAH (polycation) and PCBS (NLO polyanion) up to three bilayers of PAH/PCBS. The number of polymer layers on the nanorods was chosen in consideration of the LSPR decay length (a few nm). The functionalized gold nanorods were then deposited on either PAH/PCBS or PAH/PSS ISAM films. Characterization was performed via optical spectral measurement, zeta potential measurement, and field-emission scanning electron microscopy (FESEM). The LSPR wavelength shifted when the surrounding medium changed. It was red-shifted for each added polymer layer on the nanorod surface. However, when the functionalized nanorods were deposited on the ISAM film, the resonance peak blue-shifted. The zeta potential confirmed the proper electric charge of each polymer layer coated on the nanorods. Finally, FESEM was performed on the samples for visual inspection of the nanorod deposition and distribution after the SHG measurement was complete. The SHG from the functionalized gold nanorods was measured using a Maker-like fringe method. In this method, second harmonic waves generated from the front and rear sides of the substrate interfere constructively and destructively when the sample is rotated with respect to the incoming pump wave. Electrical noise reduction techniques were implemented to improve the SHG signal readings. Signal processing was implemented using LabVIEW software in order to read a reliable SHG signal from the setup. The maximum tolerable fluence of the gold nanorods was determined in order to prevent optical damage. The interference fringe pattern was observed from the functionalized gold nanorods and compared with that from the conventional ISAM film. The enhancement from the gold nanorods was as high as 600 times compared to the bare films. Polarization dependent SHG measurements were conducted to ascertain the effect of coupling between p- or s-polarized fundamental incident light to the SH light. To further improve the SHG enhancement, the self-assembly method herein can be extended from a monolayer to multilayers of functionalized gold nanorods. / Ph. D. / The field of optics examines the interactions of light and matter. The most commonly observed optical phenomena are the reflection and refraction of light where the frequency of light remains unchanged. However, when light becomes intense, interesting optical phenomena occur where the frequency of the outgoing light differs from that of the incoming light. With the invention of the first working laser in 1960, many interesting nonlinear phenomena were experimentally confirmed, including second harmonic generation (SHG) which was the first nonlinear optical process to be observed. In the original SHG experiment, a visible ruby laser was illuminated into a quartz crystal which produced UV light. This demonstrated light frequency doubling corresponding to wavelength halving from 694 nm (ruby laser) to 347 nm (UV light). Following progress in molecular engineering, many organic materials and polymers have been employed to study nonlinear optics for applications such as optical frequency conversion, electro-optic modulation, and second harmonic generation imaging microscopy. Nonetheless, the SHG conversion efficiency is very low due to phase-mismatch. This stems from frequency dispersion in a medium, where the incoming light and the generated light travel at different velocities. In the past, efforts toward enhancing the SHG conversion efficiency was focused on selecting specific crystals in which the incoming light and the second harmonic light pass through different effective path lengths in the medium. Although the phase-matching method is the most effective method to achieve high conversion efficiency it is also important to increase the intrinsic nonlinearity of a material. A new multidisciplinary approach using the surface plasmon resonance has become an important technique for improving the conversion efficiency. Plasmons are the collective oscillation of electrons on a metal surface. At the resonant optical frequency, the amplitude of the plasmon oscillation becomes maximized. When metallic nanoparticles are resonantly illuminated with light, the electric field can be locally intensified at the sharp boundaries of the nanoparticle. Since the intensity of SHG increases by the square of the incoming light intensity, the SHG efficiency can be greatly enhanced via surface plasmons on the metal nanoparticles. In this dissertation, the fabrication of new optical materials incorporating gold plasmonic nanoparticles for SHG enhancement was demonstrated. The plasmonic nanomaterials were fabricated by coating the surface of gold nanorods with nonlinear polymer films and depositing them on another polymer thin film on a flat glass substrate. The enhanced SHG intensity was measured and compared with that of the conventional nonlinear polymer films alone. It was observed that the enhancement from the gold nanorods was as high as 600 times. To further improve the SHG enhancement, the surface modified gold nanorods can be extended from a single layer to multilayers on the polymer film substrate.

Une des méthodes utilisées pour étudier la ferroélectricité à l'échelle nanométrique dans les couches minces est la technique appelée « Piezoresponse Force Microscopy » (PFM). La PFM est un mode dérivé de l’AFM (Atomic Force Microscopy) en mode contact. Cette technique est basée sur l’effet piézoélectrique inverse : lorsqu’on applique un champ électrique sur un matériau piézoélectrique celui-ci se déforme. La pointe est posée sur la surface et mesure donc une déformation locale due à la tension appliquée. Les résultats obtenus par PFM sur des couches minces deviennent difficiles à interpréter dès lors que des charges d’origine non ferroélectriques (différentes de la charge de polarisation) entrent en jeu : charges électroniques piégées dans l’oxyde après l’injection de courant dues aux courants de fuite, charges déjà présentes dans la couche, les charges de surface, ainsi que les différents phénomènes électrochimiques due à la présence de la couche d’eau sous la pointe lors des mesures sous atmosphère ambiante. Le but de ce travail de thèse est de montrer que dans le cas de couches très minces les courants de fuite et les phénomènes électrochimiques peuvent conduire à l’interprétation de résultat PFM erroné. Des mesures PFM ont été réalisées sur des couches minces de PbZrTiO3, BaTiO3 et des nanostructures de BiFeO3 ferroélectriques. Les paramètres de mesure utilisés en PFM sont discutés avec une attention particulière sur la première résonance de contact qui permet d’amplifier le signal PFM. L’impact des phénomènes électrochimiques sur le contraste en PFM est discuté et mis en évidence d’un point de vue expérimentale. Des images PFM sur des couches minces non-ferroélectriques sont obtenues semblable à celle obtenues lors de l’utilisation d’une procédure standard sur des échantillons ferroélectriques. Ces images sont réalisées sur des couches minces d’aluminate de lanthane (LaAlO3), d'oxyde de Gadolinium (Gd2O3) et d’oxyde de Silicium (SiO2). Les motifs obtenus sur le LaAlO3 et le Gd2O3, similaires à des domaines de polarisation opposés, tiennent dans le temps sous atmosphère ambiante. Ces mesures sont comparées avec des résultats obtenus sur des couches minces de BaTiO3 préparées par MBE (Molecular Beam Epitaxy). Différentes méthodes de caractérisation électriques à l’échelle macroscopique sont présentées afin de confirmer la ferroélectricité des couches minces étudiées dans cette thèse. L'objectif est de disposer d'une procédure permettant d'affirmer qu'un échantillon dont on ne sait rien est ou n'est pas ferroélectrique. / Piezoresponse Force Microscopy (PFM) is a powerful tool for the characterization of ferroelectric materials thanks to its ability to map and control in a non destructive way domain structures in ferroelectric films. Most of the time, the ferroelectric behaviour of a film is tested by writing domains of opposite polarization with the Atomic Force Microscope (AFM) tip and/or by performing hysteresis loops with the AFM tip as a top electrode. A given sample is declared ferroelectric when domains of opposite direction have been detected; corresponding to zones of distinct contrast on the PFM image, or when an open hysteresis loop is obtained. More prudently in certain cases, the ferroelectricity is at last attested only when the contrast is stable within several hours. But as the thickness of the films studied by PFM decrease, data become difficult to interpret. In particular, charges trapped after current injection due to leakage currents and electrochemical phenomena due to the water layer under the tip may contribute in a non-negligible way to the final contrast of PFM images. In this thesis, some PFM measurements are performed on ferroelectric PbZrTiO3, BaTiO3 thin films and BiFeO3 nanostructures. Different parameters used in PFM measurements are discussed with special attention on the buckling first harmonic PFM measurements which allow the amplification of the PFM signal. The impact of electrochemical effects on the PFM contrast are discussed and are shown experimentally. Then, the standard procedure which is used in order to show the ferroelectricity of a film is applied to a non-ferroelectric sample with apparently the same results. To do so, we use a LaAlO3, Gd2O3 and SiO2 amorphous dielectric films and apply similar voltages as for artificially written ferroelectric domains. The resulting pattern is imaged by PFM and exhibit zones of distinct PFM contrasts, stable with time, similar to the one obtained with ferroelectric samples. These results are explained and is compared with results obtained on BaTiO3 thin films prepared by Molecular Beam Epitaxy which are supposed to be ferroelectric. In order to confirm the ferroelectricity of our thin films, several macroscopic electrical techniques are introduced. The aim of this study is to establish a reliable procedure which would remove any ambiguity in the characterization of the ferroelectric nature of such samples.

System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integrating multiple functionalities onto a single platform. When the platform is a single wafer, as in SOC, it requires the ability to deposit various materials that enable the different functions on to an underlying substrate that can host the electronic circuitry. Transition metal oxides which have a wide range of properties are ideal candidates for the functional material. Si wafer on which micro-electronics technology is widely commercialized is the ideal host platform. Integrating oxides with Si, generally in the form of thin films as required by microelectronics technology, is however a challenge. It starts with the fact that the properties of crystalline oxides to be exploited in performing various functions are direction dependent. Thus, thin films of these oxides need to be deposited on Si in certain crystallographic orientations. Even if a suitably oriented Si wafer surface were available, it does not always provide for epitaxial growth a critical requirement for controlling the crystalline orientation of thin films. This is because Si surface is covered by an amorphous oxide of Si (SiOx). Thus, during growth of the functional oxide, an ambience in which the Si itself will not oxidize needs to be provided. In addition, during thin film growth on either Si or SiOx surface stresses are generated from various sources. Stress and its relaxation are also associated with the formation and evolution of defects. Both, stress and defects need to be managed in order to harness their beneficial effects and prevent detrimental ones. Given the requirement of SoC technology and the problem associated, the research work reported in this thesis was hence concerned with the precise controlling the stress and microstructure in oxide thin films deposited on Si substrates. In order to do so a versatile, ultra high vacuum (UHV) thin film with a base pressure of 10-9 Torr was designed and built as part of this study. The chamber is capable of depositing films by both sputtering (RF & DC) and pulsed laser ablation (PLD). The system has been designed to include an optical curvature measurement tool that enabled real-time stress measurement during growth. Doped zirconia, ZrO2, was chosen as the first oxide to be deposited, as it is among the few oxides that is more stable than SiOx. It is hence used as a buffer layer. It is shown in this thesis that a change in the growth rate at nucleation can lead to (100) or (111) textured films. These two are among the most commonly preferred orientation. Following nucleation a change in growth rate does not affect orientation but affects stress. Thus, independent selection of texture and stress is demonstrated in YSZ thin films on Si. A quantitative model based on the adatom motion on the growth surface and the anisotropic growth rates of the two orientations is used to explain these observations. This study was then subsequent extended to the growth on platinized Si another commonly used Si platform.. A knowledge of the stress and microstructure tailoring in cubic zirconia on Si was then extended to look at the effect of stress on electrical properties of zirconia on germanium for high-k dielectric applications. Ge channels are expected to play a key role in next generation n-MOS technology. Development of high-k dielectrics for channel control is hence essential. Interesting stress and property relations were analyzed in ZrO2/Ge. Stress and texture in pulsed laser deposited (PLD) oxides on silicon and SrTiO3 were studied. It is shown in this thesis that stress tuning is critical to achieve the highest possible dielectric constant. The effect of stress on dielectric constant is due to two reasons. The first one is an indirect effect involving the effect of stress on phase stability. The second one is the direct effect involving interatomic distance. By stress control an equivalent oxide thickness (EOT) of 0.8 nm was achieved in sputter deposited ZrO2/Ge films at 5 nm thickness. This is among the best reported till date. Finally, the effect of growth parameters and deposition geometry on the microstructural and stress evolution during deposition of SrTiO3 on Si and BaTiO3 on SrTiO3 by pulsed laser deposition is the same chamber is described.

Inexhaustible solar energy, which provides a clean, economic and green energy, seems to be an alternative solution, for current and future energy demands. Harvesting solar energy presents a challenge in using eco-friendly, earth abundant and inexpensive materials. Although present CdTe and Cu (In, Ga)Se2 (CIGS) technologies, provide light-to-electricity comparable to silicon technology, toxicity of Cd and scarcity of In limits the widespread utilization. Future tera-watt level module capacity would then be feasible by the low-cost technologies. The chalcogenide thin film technology would therefore provide the exceptional utilization in the large-area module monolithic integrations benefitting from the low material consumption owing to the direct band gap. The current thesis presents the results obtained from the quest of other thin film materials and their utilization to an unconventional Cd-free buffer layer. The films suitability for the future applications was assessed through photovoltaics device studies in a comparative manner. Chapter-1 deals with the motivation for the solar energy and the importance of thin film photovoltaics. Alternative materials which are abundantly available would help to reach the future tera watt level production, where the conventional silicon technology alone cannot satisfy the global energy demand. The utilization of non-conventional thin film based solar cells and their working principles were elucidated. The histories of the copper based alternative materials were introduced. Chapter-2 deals with the versatile thin film growth technique that has been designed fabricated and installed further which can handle the growth of the absorber and the top TCO layers with insitu sulphurisation. The methodology of the absorber deposition was discussed in detail. The experimental details for the co-sputtering of CuInAl alloy were presented. A novel selenization method, assisted by the combination of inert gases was developed for the annealing of CuInAl alloyed precursor films. Chapter-3 deals with the presentation of the results obtained on buffer and window layers. Chemical Bath deposition technique was employed for the growth and optimization of the conventional CdS and non-toxic buffer ZnS buffer layers. A) Cadmium sulphide thin films suitable for the utilization of high efficiency solar cells were optimized. Optimization of the buffer involved the effects of cadmium precursors, ammonia concentration and buffer capsule effect. A green route was presented so as to consume the precursors to the maximum extent possible. B) The alternative non-toxic buffer Zinc Sulphide (ZnS) thin films were successfully grown using the above optimized conditions. Moreover the window layer was also optimized for better device partner. Zinc Oxide was used as a n-type partner for the p-type CIS films. The ZnO films were grown by the RF-sputtering from the single cathode exhibited good crystallinity with Zincite structure (hexagonal ZnS, a= 3.249A0 and c= 5.205A0). All the grown films showed high resistivity. Al: ZnO thin films were optimized in two methods 1) by dc co-sputtering from the elemental cathodes, Zinc and Aluminum, 2) dc-sputtering from the single 2% Al-doped ZnO cathode. Low resistivity Al:ZnO thin films were deposited in both the cases. Effect of Aluminum doping into ZnO crystal lattice upon the optical and electrical properties were discussed. Chapter-4 deals with the synthesis of various absorber materials, characterizations and some properties. Briefly the A) Optimization of the CuIn1-xAlxSe2 phase with better adhesion and better crystallinity. Aluminum doping into the crystal lattice of CuInSe2 aided the wide band gap tuning of CIAS thin films. Morphological investigations were carried out for the different set of thin films before and after selenization. Effects of copper and Aluminum concentrations on the lattice parameter of the selenized thin films were addressed. The present chapter deals with the A) electrical properties of CIAS films and its heterojunction partners. Resistivity measurements and effects of Cu/In ratio and the effect of Al doping were described in detail. The CIAS/ZnO heterostructure, CIAS/Al:ZnO heterostructure junction properties as a function of different sun illuminations were discussed. B) The alternative earth abundant, eco-friendly, non-toxic elements Cu2ZnSnS4, absorber thin films synthesis and characterizations. Photo conductive photo measurements showed CZTS a potential candidate for near infra-red photodectection. C) Cu2CoSnS4 (CCTS) nanostructures and quantum dots were synthesized via simple chemical routes. CCTS quantum dots were tuned to exhibit the red edge effect and cold white phosphors. D) Cu3BiS3 nano rods were synthesized and characterized structurally and optically. The transport properties of Cu3BiS3 nanorods were tailored for showing the metallic to semiconducting transitions. Chapter-5 Discusses the A) Efforts made in understanding the CIAS based solar cells through interfaces such as CIAS/ZnO, Mo/CIAS, CIAS/CdS/i-ZnO/Al:ZnO and improving the open circuit voltage VOC upon a rotating substrate, involving the inline and in situ processes, for fabricating the cell/ module were discussed. The device statistics for various set of cells were analyzed. B) Solar cells of CTS absorber with the non-toxic buffer ZnS were fabricated and device properties were analyzed. C) CCTS quantum dots embedded in the polymer matrix were utilized for making the inverted hybrid solar devices in combination of ITO/AZnO bilayered contact replacing the acidic PEDOT: PSS. D) The solar cells made of CCTS hollow spheres by spin coating the absorber in the configuration SLG/Mo/CCTS/CdS/ iZno-AZnO/Ni-Al-Al showed a lower efficiency of 0.02%. Chapter-6 concludes with the summary of present investigations and the scope for future work.

Magister Scientiae - MSc / In this study multilayer graphene nanosheets was synthesize by oxidizing graphite to graphene oxide using H2SO4 and KMnO4 followed by reduction of graphene oxide to graphene using NaBH4. The graphene nanosheets were characterized by Fourier Transform Infrared (FTIR) and Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), Scanning electron microscopy (SEM) and X-ray diffraction (XRD). HRTEM images showed that the multilayer graphene were obtained. The graphene was immobilized directly onto a glassy carbon electrode using the drop coating technique followed by the in situ deposition of mercury, bismuth or antimony thin films to afford graphene modified glassy carbon metal film electrodes (Gr-GC-MEs). The experimental parameters (deposition potential, deposition time, rotation speed, frequency and amplitude) were optimized, and the applicability of the modified electrode was investigated towards the individual and simultaneous determination of Zn2+, Cd2+ and Pb2+ at the low concentration levels (μg L-1) in 0.1 M acetate buffer (pH 4.6) using square wave anodic stripping voltammetry (SWASV). The detection limits values for the Gr-GC-HgE was 0.08, 0.05 and 0.14 μg L-1 for Zn2+, Cd2+ and Pb2+, respectively. The Gr-GC-BiE the detection limits for was 0.12, 0.22 and 0.28 μg L-1 for Zn2+, Cd2+ and Pb2+ while the detection limits for the Gr-GC-SbE was 0.1, 0.3 and 0.3 μg L-1 for Zn2+, Cd2+ and Pb2+, respectively. A Gr-GCE prepared without any binding agents or metal film had detection limits for Zn2+, Cd2+ and Pb2+ of 3.9, 0.8 and 0.2 μg L-1 for Zn2+, Cd2+ and Pb2+. Real sample analysis of which was laboratory tap water was performed using the Gr-GCMEs. Only Gr-GC-HgE was sensitive enough to detect metal ions in the tap water samples at the 3ppb level whereas, the GC-BiE and GC-SbE detected the metal ions at the 10 μg L-1 to 30 μg L-1 level.

Improved fabrication of poly(vinylindenefluoride)-hexafluoropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a direct approach to Langmuir-Blodgett deposition without the use of annealing or additives. To improve sample quality, an automated Langmuir-Blodgett thin film deposition system was developed; a custom dipping trough was fabricated, a sample dipping mechanism was designed and constructed, and the system was automated using custom LabVIEW software. Samples were fabricated in the form of ferroelectric capacitors on substrates of glass and silicon, and implement a unique step design with a bottom electrode of copper with an aluminum wetting layer and a top electrode of gold with an aluminum wetting layer. Samples were then characterized using a custom ferroelectric measurement program implemented in LabVIEW with a Keithley picoammeter/voltage supply to confirm electric coercivity properties. Further characterization using scanning electron microscopy and atomic force microscopy confirmed the improvement in thin film fabrication over previous methods.

This dissertation presents the investigation of three thin film materials used in microelectromechanical systems (MEMS): alumina, silicon, and nickel. For this purpose, novel experimental techniques to test thin films under MEMS-relevant loading conditions were developed in order to study environmental effects and the underlying fatigue mechanisms of amorphous alumina ultra-thin coatings, mono-crystalline brittle silicon thin films, and poly-crystalline ductile nickel thin films. Knowledge of these mechanisms is necessary to improve the reliability of MEMS, especially of those devices operating in harsh environments. MEMS resonators were used to investigate both the fatigue and time-dependent behavior of alumina, silicon, and nickel. While micro-resonators were used in prior studies to research the fatigue properties of mono- and polycrystalline silicon, this work is the first in (1) using them to investigate fatigue properties of ultra-thin coatings and metallic films and in (2) using micro-resonators to investigate the time-dependent fatigue behavior of silicon films. For fatigue testing, the micro-resonators were subjected to fully-reversed loading at resonance (≈40 kHz for alumina-coated silicon, ≈8 kHz for nickel). Experiments were conducted in air at 30 °C, 50% relative humidity (RH) or 80 °C, 90% RH and testing was carried out over a broad range of applied stresses. The resonance frequency evolution proved to be a metric for the accumulated damage, which could be further quantified using finite element analysis. In addition, scanning and transmission electron microscopy were used to examine the extent of fatigue damage. For testing under static loads, the resonators were subjected to external loading using a micromanipulator and probe-tip. Experiments with atomic-layer-deposited alumina investigated the cohesive and interfacial fatigue properties of alumina coatings of four different thicknesses, ranging from nominally 4.2 nm to 50.0 nm on silicon micro-resonators. Fatigue loading led to both cohesive and interfacial damage, while static loading did not result in any damage. Both the cohesive and interfacial fatigue crack growth rates are approximately one order of magnitude higher at 80 °C, 90% RH than at 30 °C, 50% RH and seem to increase with increasing strain energy release rate. A combination of compressive loading and the silicon sidewall's surface roughness is believed to cause the observed fatigue behavior. Experiments with 10-micrometer-thick deep reactive ion etched silicon micro-resonators investigated two aspects: whether surface oxidation is the critical parameter in silicon thin film fatigue and time-dependent failure in silicon as a potential underlying cause of resonator failures in the low cycle fatigue (LCF, <17 cycles, corresponding to ≈5 min) regime. To confirm whether surface oxidation is the critical parameter in silicon thin film fatigue, the influence of oxygen diffusion barrier alumina coatings on the fatigue behavior was investigated. The coatings led to an increase in fatigue life by at least two orders of magnitude compared to uncoated devices in the harsh environment, which not only confirms reaction layer fatigue (RLF) as governing fatigue mechanism in silicon thin films, but also constitutes a practical solution to significantly increase fatigue lifetimes. Previous LCF data were inconsistent with the RLF model, given that thick surface oxidation is unrealistic for tests lasting only few minutes. Accordingly, time-dependent failure in silicon was investigated as underlying cause and the observation of resonator failures under static loading indeed suggest that time-dependent crack growth may be responsible for LCF failures. Experiments with metallic micro-resonators investigated the fatigue crack initiation in 20-micrometer-thick electro-deposited nickel under MEMS-relevant conditions, such as extreme stress gradients resulting in non-propagating cracks, fully-reversed loading (over a large range of stress amplitudes), exposure to mild and harsh environments, and accumulation of billions of cycles. Under these circumstances, extrusions form locally at the notch root (within few million cycles at high stress amplitudes). Very thick local oxides (only at the location of the extrusions) of up to 1100 nm were observed in the harsh environment, with thinner oxides (up to 700 nm) in the mild environment. Micro-cracks form in the oxide but do not propagate given the extreme stress gradients. Finite element analysis confirmed that oxidation and micro-cracking lead to changes in the resonance frequency, which are consistent with the experimental results. Accumulation of cyclic plasticity appears to also lead to a decrease in resonance frequency which scales with applied strain.

In several types of coating processes a solid substrate is removed at a controlled velocity U from a liquid bath. The shape of the liquid meniscus and the thickness of the coating layer depend on U. These dependencies have to be understood in detail for non-volatile liquids to control the deposition of such a liquid and to lay the basis for the control in more complicated cases (volatile pure liquid, solution with volatile solvent). We study the case of non-volatile liquids employing a precursor film model that describes partial wettability with a Derjaguin (or disjoining) pressure. In particular, we focus on the relation of the deposition of (i) an ultrathin precursor film at small velocities and (ii) a macroscopic film of thickness h ∝ U^(2/3) (corresponding to the classical Landau Levich film). Depending on the plate inclination, four regimes are found for the change from case (i) to (ii). The different regimes and the transitions between them are analysed employing numerical continuation of steady states and saddle-node bifurcations and simulations in time. We discuss the relation of our results to results obtained with a slip model. In connection with evaporative processes, we will study the pinning of a droplet due to a sharp corner. The approach employs an evolution equation for the height profile of an evaporating thin film (small contact angle droplet) on a substrate with a rounded edge, and enables one to predict the dependence of the apparent contact angle on the position of the contact line. The calculations confirm experimental observations, namely that there exists a dynamically produced critical angle for depinning that increases with the evaporation rate. This suggests that one may introduce a simple modification of the Gibbs criterion for pinning that accounts for the non-equilibrium effect of evaporation.