Bumpless interconnects and ultra-thinning of 300 mm wafers for three-dimensional (3D) stacking technology has been studied [1, 2]. In our previous studies, wafer thinning effect using device wafers less than 10 μm was investigated [3, 4]. There was no change for the retention time before and after thinning even at 4 μm in thickness of DRAM wafer [5]. In this study, the behavior of Cu contamination on an ultra-thin Si stacked structure was investigated. Thinned Si wafers were intentionally contaminated with Cu on the backside and 250 °C of heating was carried out during the adhesive bonding and de-bonding processing. An approximately 200 nm thick damaged layer was formed at the backside of the Si wafer after thinning process and Cu particle precipitates ranged at 20 nm were observed by cross-sectional transmission electron microscopy (X-TEM). With secondary ion mass spectrometry (SIMS) and EDX analyses, Cu diffusion was not detected in the Si substrate, suggesting that the damaged layer prevents Cu diffusion from the backside.

The lithium tantalite [LiTaO3, abbreviated to LT] thin films were deposited on Pt/Ti/SiO2/Si substrates by spin coating with sol-gel technology and various rapid thermal processing in this thesis. By changing the annealed layers and heating temperature(500~800¢J), the effects of various thermal treatments on the thin films growth and the related properties are studied. Besides, the dynamic response of pyroelectric IR detector using LiTaO3 films was studied. In addition, the detector with back side etching was achieved by the anisotropic wet etching of back silicon substrate. The comparisons of detectors with and without backside etching were also investigated. Experimental results reveal that the annealed layers will influence strongly on grain size, dielectricity, ferroelectricity and pyroelectricity of LT thin films. With the increase of the annealed layers, the grain size of LT thin film increases slightly, and highly c-axis orientated LT films can be obtained for the twelve annealed layers. From 4 to 12 annealed layers, the relative dielectric constant of LT thin film increases from 35 up to 65, the dielectric loss (tand) decreases from 0.00637 to 0.00324, the coercive field (Ec) decreases from 84.79KV/cm to 46.23KV/cm, the remnant polarization (Pr) increases from 2.54 mC/cm2 to 7.36 mC/cm2, and the pyroelctric coefficient (g) increases from 2.18´10-8 C/cm2K up to 5.71´10-8 C/cm2K. In addition, the results also show that the LT thin film possesses the largest figures of merit Fv (3.02¡Ñ10-10 Ccm/J) and Fm (4.08¡Ñ10-8 Ccm/J) at heating temperature of 700¢J with twelve annealed layers. The voltage responsivities (Rv) measured at 70 Hz exists a largest value of 8398 V/W with twelve annealed layers. The specific detectivity (D*) measured at 200 Hz has the maximum value of 1.1¡Ñ108 cmHz1/2/W with twelve annealed layers. The results show that LT12 pyroelectric thin film detector exists both the maximums of voltage responsivity and specific detecivity. Therefore, optimizing the conditions of this study, LT12 thin film will be the most suitable for IR detector application. Finally, the voltage responsivities (Rv) of LT thin film increases from 8398 V/W to 9537 V/W, and the specific detectivity (D*) increases from 1.1¡Ñ108 cmHz1/2/W to 2.67¡Ñ108 cmHz1/2/W after backside etching. The results show that the detectivity can be improved after backside etching.

Les capteurs d’images cherchent de nos jours non seulement à être performant mais également à être adaptés à leur environnement et à de nouvelles utilisations. On peut évoquer le cas des machines et véhicules autonomes par exemple. En raison de la qualité d’image et son coût, une vaste majorité des applications ont aujourd’hui adopté l’usage des pixels CMOS actifs à photodiodes pincées et à illumination par la face arrière.L’originalité de la solution proposée dans ce manuscrit repose l’intégration d’une photogate, utilisée par les capteurs CCD, au sein d’un pixel CMOS. Son utilisation optimise alors l’espace disponible dans le pixel et diminue le nombre d’implantation nécessaire à sa réalisation. Ce développement a également conduit à l’emploi d’une grille de transfert spécifique. Ces deux nouvelles structures auront toutes les deux été élaborées durant cette thèse notamment à l’aide de simulations et de structures de test.La caractérisation de ce nouveau pixel aura démontré de nombreux atouts : entre autres, l’augmentation de la charge à saturation et la réduction du courant d’obscurité. De plus, l’étude détaillée du courant d’obscurité indique une distribution davantage centrée. Celle-ci permet l’identification de contaminants et une meilleure tenue en température en comparaison à une photodiode classique.De nombreuses perspectives s’offrent à la structure telle que la réduction du pas du pixel ou son utilisation dans un environnement contraint en température. / Nowadays image sensors look neither to be efficient, but rather to be adapted to their environment or to new uses. Autonomous machines and vehicles can be mentioned for instance. Because of image quality and cost, a large majority of applications employs CMOS pixels and pinned back-side illuminated photodiodes.The originality of the solution proposed in this manuscript relies on the integration of a photogate, used by CCD sensors, inside a CMOS pixel. Its use optimize the available space inside the pixel and decrease the number of implantation needed to its realization. This development has also led to the use of specific transfer gate. Both structures have been created during this thesis and designed using simulation and specific test structures.The characterization of the developed pixel demonstrate many assets such as an increase of saturation charges and a reduction of dark current. Furthermore, a detailed study of the dark currant indicates a more gathered pixel distribution, allowing the identification of contaminants and a better temperature handling in comparison to a classical photodiode.The proposed structure offers many perspectives such as reduction of the pixel pitch or its potential use in an environment with a temperature constraint.

No description available.

La microscopie optique sur substrats antireflets est un outil de caractérisation simple et puissant qui a notamment permis l'isolation du graphène en 2004. Depuis, le domaine d'étude des matériaux bidimensionnels (2D) s'est rapidement développé, tant au niveau fondamental qu'appliqué. Ces matériaux ultraminces présentent des inhomogénéités (bords, joints de grains, multicouches, etc.) qui impactent fortement leurs propriétés physiques et chimiques. Ainsi leur caractérisation à l'échelle locale est primordiale. Cette thèse s'intéresse à une technique récente de microscopie optique à fort contraste, nommée BALM, basée sur l'utilisation originale de couches antireflets très minces (2-5 nm) et fortement absorbantes (métalliques). Elle a notamment pour but d'évaluer les mérites de cette technique pour l'étude des matériaux 2D et de leur réactivité chimique. Ainsi, les différents leviers permettant d'améliorer les conditions d'observation des matériaux 2D ont tout d'abord été étudiés et optimisés pour deux matériaux modèles : l'oxyde de graphène et les monocouches de MoS₂. L'étude de la dynamique de dépôt de couches moléculaires a notamment permis de montrer à la fois l'extrême sensibilité de BALM pour ce type de mesures et l'apport significatif des multicouches antireflets pour l'augmentation du contraste lors de l'observation des matériaux 2D. L'un des atouts principaux de BALM venant de sa combinaison à d'autres techniques, nous nous sommes particulièrement intéressés au couplage de mesures optiques et électrochimiques pour lesquelles le revêtement antireflet sert d'électrode de travail. Nous avons ainsi pu étudier optiquement la dynamique de réduction électrochimique de l'oxyde de graphène (GO), l'électro-greffage de couches minces organiques par réduction de sels de diazonium sur le GO et sa forme réduite (r-GO), ainsi que l'intercalation d'ions métalliques entre feuillets de GO. En combinant versatilité et fort-contraste, BALM est ainsi établi comme un outil prometteur pour l'étude des matériaux 2D et en particulier pour la caractérisation locale et in situ de leur réactivité chimique et électrochimique. / Optical microscopy based on anti-reflective coatings is a simple yet powerful characterization tool which notably allowed the first observation of graphene in 2004. Since then, the field of two-dimensional (2D) materials has developed rapidly both at the fundamental and applied levels. These ultrathin materials present inhomogeneities (edges, grain boundaries, multilayers, etc.) which strongly impact their physical and chemical properties. Thus their local characterization is essential. This thesis focuses on a recent enhanced-contrast optical microscopy technique, named BALM, based on ultrathin (2-5 nm) and strongly light-absorbing (metallic) anti-reflective layers. The goal is notably to evaluate the benefits of this technique for the study of 2D materials and their chemical reactivity. The various levers to improve 2D materials observation were investigated and optimized for two model materials: graphene oxide and MoS₂ monolayers. The investigation of molecular layer deposition dynamic notably showed the extreme sensitivity of BALM for such measurements and the significant contribution of multilayers anti-reflective coatings to enhance contrast during the observation of 2D materials. One of the main assets of BALM comes from its combination to other techniques. We particularly considered the coupling between optical measurements and electrochemistry for which the anti-reflective layer serves as working electrode. We investigated optically the dynamic of electrochemical reduction of Graphene Oxide (GO), the electrografting of organic layers by diazonium salts reduction on GO and its reduced form (rGO), as well as the intercalation of metallic ions within GO sheets. By combining versatility and high-contrast, BALM is established as a promising tool for the study of 2D materials, especially for the local and in situ characterization of their chemical and electrochemical reactivity.

Global shutter pixels are indispensable for applications wherein the minimisation of motion artefacts is of critical importance. However, these pixels are more complex than the common rolling shutter type pixels and require some form of per-pixel storage. They are almost invariably reliant upon metal light shielding in order to protect their in-pixel memory nodes and this prevents them from taking advantage of some of the latest developments in CMOS image sensor technology. Backside-illumination is the most prominent example of such a technology. The greater sensitivity afforded by the reduced optical stack height is indispensable for many applications, particularly in the mobile market where form factor and power consumption are constrained. The design challenge is to exploit these advantages offered by backside-illumination without making use of metal shielding of the per-pixel memory. The research in this thesis covers the design, implementation and characterisation of a back-illuminated voltage-domain global shutter pixel. The pixel architecture is a novel 10 transistor-per-pixel architecture with dual independent in-pixel storage nodes. Beginning with the pixel architecture, the design is developed through TCAD-driven photodiode and pixel layout co-optimisation. The behaviour of pixels with differential parasitic light sensitivity (PLS) behaviour is analysed in greater detail than previously reported and a prediction model is developed based upon this. The 10T pixel is characterised and found to have excellent PLS of -73:5 dB native and -82:5 dB differential PLS at 940 nm. The dual in-pixel storage enables the pixel to operate either in a low noise correlated double sampling mode with differential PLS, or in an exposure-bracketed high dynamic range imaging (HDR) mode. This HDR mode is successfully demonstrated and yields substantial enhancement of the pixel dynamic range.

Water resources are increasingly precious, so wastewater reclaiming has become an important source of water nowadays. There are many types of industry including conventional and hi-tech ones in the selected industrial processing zone, where different process wastewaters are treated by a centralized wastewater treatment plant. The effluent is then discharged into the ocean (EDO). On the other hand, among several other industries backside grinding (BG) wastewater generated by the IC (integrated-circuit) packaging and testing industry is treated by their owned wastewater treatment plants and then discharged onto land (EDL). Normally, BG wastewater is huge in quantity and it contains microscale and nanoscale particles. The objectives of this research were two-fold: (1) to evaluate the feasibility of using two tubular ceramic membranes (microfiltration and ultrafiltration) coupled with the electrocoagulation/electrofiltration (EC/EF) process to effectively treat the effluent discharged into the ocean, effluent discharged onto land, and BG wastewater for the purpose of reclamation; and (2) to investigate the best time for backwashing of membranes through the analysis of components of membrane fouling using resistances in series model. The experimental results showed that the ultrafiltration (UF) membrane (i.e., tubular TiO2/Al2O3 composite membrane) outperformed the mictrofiltration (MF) membrane (i.e., tubular Al2O3 membrane) in terms of permeate quality. But, generally, the later yielded a greater membrane flux. In the case of BG wastewater by UF and EC/EF, the quality of permeate met the tap water standards in terms of water quality items analyzed. As for EDO and EDL further treated by UF and EC/EF, all the analyzed water quality items of permeate, except pH and total dissolved solids, met the tap water standards in Taiwan. Thus, more efforts have to be made to reclaim these two types of effluent. Finally, the components of membrane fouling were analyzed using resistances in series model for the tested water specimens. The results showed that generally the irreversible resistance component (Rirr) had a greater contribution to a better quality of permeate than that of the reversible resistance component (Rr). It was also found that the magnitude of Rirr of BG wastewater was greater than Rirr values of the other two effluents. This might explain why the quality of permeate of the former was better than the latter. The results further indicated that Rr increased more than Rirr as the operating time elapsed, resulting in a limited improvement of permeate quality even a longer treatment time was employed. To recover the membrane flux to its optimum, in this study the best time for backwashing of membrane was determined based on the time at which Rr was greater than Rirr. However, the flux recovery was found to be in the range of 60-77% as compared with the initial flux for a virgin membrane in treating new batch of water specimens. The fraction unable to recover by backwashing might be contributed by Rirr in the membrane pores. A further acid washing would resolve this problem.

Interiors are often dealing with the notion of front and back. Physically, with walls facing the occupant and concealing a “behind”, a backside, perhaps an adjacent room. But also, in organization; “in the back of the building” meaning the furthest away from the entrance or from the street, the public. There is also a variety of interiors that are backsides them self. Spaces that, in contrast to fronts or “primary” spaces not are intended to be shown perhaps because they are occupied by functions, or people that for some reason are desired to be hidden. The idea of a backside, though, whether considered good or bad, what belongs there and not, has shifted over time. I believe that this is a truly cultural issue, governed by social constructions that stabilize and become customs in the fabrication of interiors. In this project have I studied and reworked the information from a few domestic interiors. Through the methods of inverting and full-scale construction, have I investigated what a “backside of an interior” is, what it does and how the treatment of it has changed over time. In my studies, I have found that a contemporary apartment interior attempts to seamlessly exclude the “backside”, just like the parlours of a 100 years old bourgeoise palace. But in the contemporary apartment, it is because of praxis and standardization, and not because of what ideas govern the design. By building a full-scale part of an actual contemporary apartment - where I invert and reorganize the order of how it would have been costume - the praxis is brought to light and questioned.

Bumpless interconnects and ultra-thinning of 300 mm wafers for three-dimensional (3D) stacking technology has been studied [1, 2]. In our previous studies, wafer thinning effect using device wafers less than 10 μm was investigated [3, 4]. There was no change for the retention time before and after thinning even at 4 μm in thickness of DRAM wafer [5]. In this study, the behavior of Cu contamination on an ultra-thin Si stacked structure was investigated. Thinned Si wafers were intentionally contaminated with Cu on the backside and 250 °C of heating was carried out during the adhesive bonding and de-bonding processing. An approximately 200 nm thick damaged layer was formed at the backside of the Si wafer after thinning process and Cu particle precipitates ranged at 20 nm were observed by cross-sectional transmission electron microscopy (X-TEM). With secondary ion mass spectrometry (SIMS) and EDX analyses, Cu diffusion was not detected in the Si substrate, suggesting that the damaged layer prevents Cu diffusion from the backside.

Made available in DSpace on 2016-06-02T20:00:22Z (GMT). No. of bitstreams: 1 DissBCF.pdf: 30759720 bytes, checksum: 0bb002a847de0e2dfa65110800339b3a (MD5) Previous issue date: 2007-12-01 / Financiadora de Estudos e Projetos / The analysis and discussion about anthropic occupation of Permanent Preservation Areas along urban water streams constitute the central part of this work. Initially was tried to understand how human beings dominate space and how this domination is degrading the life quality of Man himself through times. Then, through the studies of occupation of Permanent Preservation Areas of Bagres, Cubatão and Espraiado streams in Franca/SP, we tried to explain the problems of Permanent Preservation Areas, as well as identify along with the legal aspects the critical situation of the treatment given to these areas by the society and the government. / A análise e discussão sobre a ocupação antrópica em Áreas de Preservação Permanente APPs marginais a corpos d água urbanos constituem o cerne deste trabalho. Inicialmente procurou-se entender como o ser humano interage com o espaço e como essa interação vem ao longo dos tempos degradando a qualidade de vida do próprio Homem. Posteriormente, através do estudo da ocupação das APPs dos córregos dos Bagres, Cubatão e Espraiado, em Franca/SP, procurou-se explanar os problemas sobre a questão urbana das APPs, bem como identificar, juntamente com os aspectos legais, a situação crítica do tratamento dado pelo poder público e sociedade a essas áreas.