Ces dernières années ont vu un intérêt croissant pour l'application de nanoparticules de chalcogénure (IP) (par exemple Se, Te) dans divers secteurs industriels, y compris l'énergie, les aciers, le verre et le raffinage du pétrole. Le chalcogénure métallique fluorescent (par exemple CdSe, CdTe) NPs sont utilisés dans les cellules solaires, les capteurs optoélectroniques et aussi dans le domaine de la biologie et de la médecine pour l'imagerie ou de détection comprenant biolabelling. En outre, en raison de la forte toxicité des oxyanions chalcogènes (à savoir, sélénite, séléniate, tellurites et tellurate), leur libération dans l'environnement est très préoccupante. Ainsi, mettre l'accent a été donné dans cette thèse sur le développement d'un nouveau procédé de synthèse microbienne des NPs chalcogénures en combinant le traitement biologique des eaux usées Se / Te contenant avec biorecovery de Se / Te sous la forme de Se / Te chalcogénures NPs.Une attention particulière a été accordée pour étudier l'effet des métaux lourds (par exemple Cd, Zn et Pd) co-contaminants sur bioréduction sélénite par anaérobie granulaire boues. boue anaérobie granulaire capable de réduire sélénite de séléniure de, en présence de Cd a été enrichie pour la synthèse microbienne de CdSe IP. Il était évident que lorsque Cd est présent avec sélénite, soit il forme un complexe de Se-Cd par adsorption sur biogène Se (0) des nanoparticules après EME-oxyanion ou bioréduction il réagit avec le séléniure aqueux (HSe-) pour former CdSe. Les spectres d'absorption et de fluorescence de la phase aqueuse à confirmer la présence de CdSe IP dans la phase aqueuse. spectroscopie Raman et X-ray spectroscopie de photoélectrons (XPS) analyse l'appui de cette constatation. La formation d 'une couche alliée de CdSxSe1-x à l'interface entre le noyau et CdS CdSe shell dans la boue a également été observée. Des études détaillées sur les substances polymères extracellulaires (EPS) révèlent que la teneur en protéines et en polysaccharides comme augmenté dans les EPS extraites de boues enrichi tandis que les substances humiques comme diminué. chromatographie d'exclusion de taille (SEC) des EPS révèle en outre une empreinte distincte pour les protéines et les substances humiques-like, avec une augmentation de haute teneur en protéines comme poids moléculaire et l'apparition de nouveaux pics pour les substances humiques comme dans les EPS après l'enrichissement.Anaérobie des boues lit granulaire (UASB) à courant ascendant a été utilisé pour la première fois pour le retrait continu de tellurite des eaux usées synthétique et la récupération du Te comme biogénique Te (0). La spectroscopie aux rayons X à dispersion d'énergie (EDS), diffraction des rayons X (XRD) et analyse spectroscopique Raman de la biomasse a confirmé le dépôt de Te (0) dans la biomasse. Il était évident que la majorité du Te (0) a été piégé principalement dans l'EPS entourant la biomasse, qui peut être facilement séparé par centrifugation / Recent years have seen a growing interest in the application of chalcogenide nanoparticles (NPs) (e.g. Se, Te) in various industrial sectors including energy, steels, glass and petroleum refining. The fluorescent metal chalcogenide (e.g. CdSe, CdTe) NPs are used in solar cells, optoelectronic sensors and also in the field of biology and medicine for imaging or sensing including biolabelling. Moreover, due to the high toxicity of chalcogen oxyanions (i.e., selenite, selenate, tellurite and tellurate), their release in the environment is of great concern. Thus, emphasize was given in this thesis on the development of a novel microbial synthesis process of chalcogenide NPs by combining biological treatment of Se/Te-containing wastewaters with biorecovery of Se/Te in the form of Se/Te chalcogenides NPs.A special focus was given to study the effect of heavy metal (e.g. Cd, Zn and Pd) co-contaminants on selenite bioreduction by anaerobic granular sludge. Anaerobic granular sludge capable of reducing selenite to selenide in the presence of Cd was enriched for the microbial synthesis of CdSe NPs. It was evident that when Cd is present along with selenite, it either forms a Se-Cd complex by adsorption onto biogenic Se(0) nanoparticles after Se-oxyanion bioreduction or it reacts with aqueous selenide (HSe-) to form CdSe. The absorption and fluorescence spectra of the aqueous phase confirm the presence of CdSe NPs in the aqueous phase. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analysis support this finding. The formation of an alloyed layer of CdSxSe1-x at the interface between the CdSe core and CdS shell in the sludge was also observed. Detailed studies on the extracellular polymeric substances (EPS) reveal that the protein and polysaccharide-like content increased in the EPS extracted from enriched sludge while humic-like substances decreased. Size exclusion chromatography (SEC) of EPS further reveals a distinct fingerprint for proteins and humic-like substances, with increase in high molecular weight protein-like and the appearance of new peaks for humic-like substances in the EPS after the enrichment.An upflow anaerobic granular sludge bed (UASB) reactor was used for the first time for continuous removal of tellurite from synthetic wastewater and the recovery of Te as biogenic Te(0). Energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman spectroscopic analysis of biomass confirmed the deposition of Te(0) in the biomass. It was evident that the majority of the Te(0) was trapped predominantly in the EPS surrounding the biomass, which can be easily separated by centrifugation

Face à la raréfaction des énergies fossiles, l’industrie automobile se trouve dans l’obligation de réduire la consommation des véhicules. L’une des idées est de récupérer l’énergie perdue sous forme d’échauffements grâce à la thermoélectricité. L’objectif de ces travaux est l’implantation d’un module thermoélectrique au niveau du radiateur afin d’en récupérer la chaleur dans le cadre d’un projet de recherche financé par Valéo Systèmes Thermiques et l’ADEME. La conception des radiateurs nécessite des épaisseurs supérieures à la centaine de micromètres de matériaux thermoélectriques afin d’en optimiser l’espace disponible. L’électrodéposition est apparue comme la technologie la plus adaptée car elle permet de déposer les matériaux directement sur l’ailette. Cette étude est consacrée aux dépôts électrochimiques de chalcogénures de bismuth (Bi2Te3 et Bi0,5Sb1,5Te3), matériaux les plus performants aux températures de fonctionnement de l’échangeur thermique. La première partie de ces travaux concerne la faisabilité de l’obtention de films d’épaisseurs supérieures à 100 µm et leurs caractérisations : stœchiométrie, structures et propriétés thermoélectriques. L’utilisation originale d’une anode soluble permet l’obtention de films de Bi2Te3 de près de 400 µm. Pour le composé ternaire, la synthèse consiste en une succession de couches de composés différents (Bi0,25Sb0,75-Te0), avant de procéder à leur interdiffusion via un traitement thermique. La dernière partie concerne la réalisation d’un module thermoélectrique. Les multiples étapes de lithographie et de synthèses électrochimiques ont été étudiées afin d’obtenir un module adapté aux échangeurs thermiques. Les caractérisations préliminaires de leurs propriétés montrent des résistances élevées et plusieurs voies d’améliorations sont proposées / In order to face the rarefaction of fossil fuels, the automotive industry has to find new ways to reduce their vehicle consumption. One of the possible ideas is to recover the energy that is lost as heating by using thermoelectricity. The aim of this work is to set-up thermoelectric generators into the radiator in order to recover this lost heat in a frame of research project financially supported by Valéo Systèmes Thermiques and ADEME. The radiator design requires thermoelectric materials thicknesses up to hundred micrometers in order to optimize the available space. Electroplating seems to be the best way to synthesize those materials directly onto the radiator fins. This study focuses on the electroplating of the best thermoelectric materials adapted to the operating temperatures of the heat exchanger: bismuth chalcogenides (Bi2Te3 and Bi0,5Sb1,5Te3). Firstly, a study has been carried out in order to synthesize thick layers above 100 µm of those two materials. Stoichiometry and thermoelectric properties were also determined. The original use of a soluble anode permitted to obtain 400 µm thick Bi2Te3 films. For the ternary compound, the synthesis consisting in a succession of thin layers of Bi0,25Sb0,75 and Te0, before their interdiffusion by annealing, is also presented. Finally, the last part covers the study carried out on the realization of the thermoelectric generators. The multiple stages of lithography and electrochemical syntheses were studied in order to obtain a module adapted to the heat exchanger. The first characterizations evidence high internal resistances and different ways to improve them are also presented

Les matériaux thermoélectriques sont des matériaux capables de convertir l’énergie thermique en énergie électrique en exploitant l’effet Seebeck et vice-versa, en exploitant l’effet Peltier. Grâce à ces deux effets, il est possible de récupérer l’énergie perdue sous forme de chaleur dans la plupart des activités humaines (industrie, automobile,…) ou bien de produire du froid de manière efficace et silencieuse. Pour une efficacité optimale, il faut se tourner vers des matériaux qui possèdent simultanément une faible résistivité électrique, (rhô), une faible conductivité thermique (lambda) et un fort pouvoir thermoélectrique (ou coefficient Seebeck alpha). En d’autre termes, on peut monter que le facteur a optimiser est le facteur de mérite ZT = alpha2.T/rhô.lambda (une valeur de ZT de 1 est considérée comme élevée). Les verres de chalcogénures, grâce à leurs structures désordonnées, présentent naturellement un lambda bas mais sont trop résistifs (à l’opposé des matériaux thermoélectriques classiques dont on cherche à diminuer la conductivité thermique). Dans ce travail, deux stratégies ont été mises en places afin d’abaisser la résistivité électrique et d’augmenter ainsi les performances thermoélectriques des verres de chalcogénures. En nous focalisant sur les verres de tellurures, nous avons d’abord cherché à modifier leur composition et ajouter des éléments métalliques tels que Cu. La substitution de Te par Se dans le système Cu-As-Te a également permis d’augmenter la stabilité en température. Finalement pour des matériaux vitreux, un ZT maximum de l’ordre de 0,1 a été obtenu à 375K, pour le composé Cu30As10Te54Se6.La seconde solution consiste en une vitrocéramisation de ces verres : en profitant du mélange de matériau vitreux et de matériau cristallin, il est possible de tirer parti des propriétés de chacun (respectivement une conductivité thermique basse et un résistivité électrique basse) et d’augmenter le facteur ZT. En optimisant les vitrocéramiques de la composition Cu15As30Te55, nous avons pu obtenir un ZT proche de 0,2 à 375K. L’évolution des propriétés en fonction de la fraction cristalline et de la microstructure n’est toutefois pas facile à prédire, ce qui nous a également mené à la mise en place d’un modèle de transport dans les composites biphasés, donnant quelques indications sur les directions à suivre pour finalement améliorer ces matériaux davantage / Thermoelectrics are materials capable of converting thermal energy into electrical energy through Seebeck effect, and vice-versa through Peltier effect. By using these two phenomena, it becomes possible to salvage heat loss from most human activities (industries, cars,…) or on the other side, to efficiently and silently produce cold. To obtain an efficient material, it is necessary to look for materials that simultaneously possess a low electrical resistivity, a low thermal conductivity and a high thermoelectric power alpha (or Seebeck coefficient). In other words, it is possible to show that we need to optimize the figure of merit ZT = alpha2.T/rho.lambda (a ZT as high as 1 can be considered as efficient). Chalcogenide glasses, due to favorably disordered structures, exhibit a naturally low thermal conductivity, but have a too high electrical resistivity (oppositely to classical thermoelectrics of which we seek to lower the thermal conductivity). In this work, two strategies were set up into lowering electrical resistivity and then further enhance the thermoelectric performance of chalcogenide glasses. Focusing on telluride glasses, we firstly tried to modify their composition and add metallic elements such as copper. Substituting Te par Se in the ternary system Cu-As-Te allowed increasing their thermal stability. For vitreous materials, we finally obtained a maximal ZT around 0.1 at 375K, for the compound Cu30As10Te54Se6. The second solution consists in partially crystallizing these glasses: by taking advantage of the favorable properties of each phase (the low thermal conductivity of the glassy phase and the low electrical resistivity of the crystalline phase), the figure of merit can be raised. By optimizing glass-ceramics of composition Cu15As30Te55, a ZT close to 0.2 at 375K has been obtained. However, predicting how the thermoelectric properties evolve with crystalline fraction or microstructure is complex. That led us to set up a transport model for two-phases composites, giving finally some insights to further improve these materials.

Les verres de chalcogénures sont développés en raison de leurs propriétés de transparences dans l'infrarouge. Il est par exemple possible de fabriquer des fibres optiques pour des fonctions capteurs fonctionnant dans le moyen infrarouge. L'objet de la présente thèse consiste à étudier le comportement métastable des verres de chalcogénures lorsqu'ils sont soumis à des contraintes particulières : thermiques, rayon γ, ajout d'élément déstabilisant. Des compositions dopées par des terres rares ont également étudiées pour développer des sources fonctionnant dans le moyen IR. / Chalcogenide glasses are developed because of their properties of transparency in the infrared. For example it is possible to manufacture optical fiber or planar wavguide for sensing in the mid-infrared. The purpose of this thesis is to study the metastable behavior of chalcogenide glasses when subjected to specific constraints: thermal behavior, γ ray irradiation, addition of destabilizing elements. Compositions doped with rare-earth have also been also studied in order to develop sources operating in the mid-infrared range.

abstract: Lateral programmable metallization cells (PMC) utilize the properties of electrodeposits grown over a solid electrolyte channel. Such devices have an active anode and an inert cathode separated by a long electrodeposit channel in a coplanar arrangement. The ability to transport large amount of metallic mass across the channel makes these devices attractive for various More-Than-Moore applications. Existing literature lacks a comprehensive study of electrodeposit growth kinetics in lateral PMCs. Moreover, the morphology of electrodeposit growth in larger, planar devices is also not understood. Despite the variety of applications, lateral PMCs are not embraced by the semiconductor industry due to incompatible materials and high operating voltages needed for such devices. In this work, a numerical model based on the basic processes in PMCs – cation drift and redox reactions – is proposed, and the effect of various materials parameters on the electrodeposit growth kinetics is reported. The morphology of the electrodeposit growth and kinetics of the electrodeposition process are also studied in devices based on Ag-Ge30Se70 materials system. It was observed that the electrodeposition process mainly consists of two regimes of growth – cation drift limited regime and mixed regime. The electrodeposition starts in cation drift limited regime at low electric fields and transitions into mixed regime as the field increases. The onset of mixed regime can be controlled by applied voltage which also affects the morphology of electrodeposit growth. The numerical model was then used to successfully predict the device kinetics and onset of mixed regime. The problem of materials incompatibility with semiconductor manufacturing was solved by proposing a novel device structure. A bilayer structure using semiconductor foundry friendly materials was suggested as a candidate for solid electrolyte. The bilayer structure consists of a low resistivity oxide shunt layer on top of a high resistivity ion carrying oxide layer. Devices using Cu2O as the low resistivity shunt on top of Cu doped WO3 oxide were fabricated. The bilayer devices provided orders of magnitude improvement in device performance in the context of operating voltage and switching time. Electrical and materials characterization revealed the structure of bilayers and the mechanism of electrodeposition in these devices. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2020

Ce travail de thèse porte sur une série d’échantillons de composition nominale AgBiSe2-xSx (avec x= 0 à 2), appartenant à la famille des chalcogénures ternaires de type I-V-VI₂. Les analyses structurales et thermiques ont mis en évidence une solution solide complète sans gap de miscibilité, et des transitions de phase pour toutes les compositions. Nous avons pu obtenir des composés monophasés à la fois des phases hexagonale et cubique, et notre étude de DRX en température à mis en évidence une phase rhomboédrique pour certaines compositions (x=1 à 2 dans AgBiSexS2-x). Les résultats de DSC ont confirmé la présence de transitions de phase pour toutes les compositions, avec un déplacement des températures de transition en fonction de la fraction de soufre/sélénium. Notre étude de DRX sous pression de l’échantillon AgBiSe₂ a montré une transition de phase induite par la pression d’une phase hexagonale à rhomboédrique puis cubique. Suite à cette observation, l’application d’une pression chimique, par la substitution de 30% du Bi par du Sb a été utilisée avec succès pour stabiliser la phase cubique pour toutes les compositions. Le dopage par Nb des échantillons substitués par l’antimoine l’a pas eu d’influence sur la nature des phases stables à l’ambiante en comparaison aux échantillons non dopés. Nous avons ensuite étudié l’influence du dopage sur les propriétés de transport. Les valeurs négatives de S pour toutes les compositions indiquent un comportement de semi-conducteur de type n dans la gamme (50-300K). Par ailleurs, nos mesures ont montré à a fois de très faibles valeurs de κ mais aussi une décroissance de ∣S∣ et ρ avec l’augmentation de la fraction de Nb. Ces résultats devraient permettre d’optimiser le facteur de puissance pour améliorer les valeurs de ZT. Enfin, une étude en collaboration avec une équipe chinoise a permis d’obtenir une valeur de ZT de 1.3 à 890K dans un composé AgPbmSnSe₂. / Here, we report on a series of samples with nominal compositions AgBiSe2-xSx (with x= 0 to 2) belonging to the class of ternary chalcogenides of type I-V-VI₂. The structural and thermal analysis result shows a complete solid solution without miscibility gap and phase transitions for all compositions. We have succeeded in obtaining single phase compounds, of both hexagonal and cubic phase, and the high temperature XRD study showed the rhombohedral phase too for selected compositions (x=1 to 2 in AgBiSexS2-x). The DSC results confirmed the presence of the phase transitions for all compositions, with a shift of the temperature of transition as a function of the sulfur/selenium fraction. The high pressure XRD investigation of the compound AgBiSe₂ showed a pressure induced phase transition from hexagonal-to-rhombohedral-to-cubic phase. In this respect, chemical pressure with 30% Sb on the Bi site has been successfully applied to stabilize the cubic phase for all compositions. Nb doping in the Sb-substituted samples does not show any change in the phase behavior at RT in comparison with the undoped samples. The influence of doping on transport properties was analyzed. The negative value of S for all compositions indicates n-type semiconducting behavior over the range (50-300K). Further, the results not only shows very low value of κ but the ∣S∣ and ρ value also decreases for each composition from Nb fraction 0.02 to 0.04. This gives us the opportunity to optimize the power factor in order to improve the ZT value. At last, collaborative study with Chinese team showed that ZT of 1.3 at 890 K can be achieved for AgPbmSnSe2+m (m = 50).

In the present thesis the superconducting properties of the Iron-based Ba_{1-x}Rb_{x}Fe_{2}As_{2} arsenides, and A_{x}Fe_{2-y}Se_{2} (A = Cs, Rb, K) chalcogenides are investigated by means of Muon Spin Rotation Spectroscopy. The temperature and pressure dependence of the magnetic penetration depth is obtained form muSR experiments and analyzed to probe the superconducting gap-symmetries for each samples. The Ba_{1-x}Rb_{x}Fe_{2}As_{2} system is described within the multi-gap s+s-wave scenario and results are discussed in the light of the suppression of inter-band processes upon hole doping. Due to the lowered upper critical field Bc2 and reduced Tc, a large section of B-T-p phase diagram is studied for the hole-overdoped x=1 case. By applying hydrostatic pressure, the RbFe_{2}As_{2} system exhibits a classical BCS superconducting characteristics. The A_{x}Fe_{2-y}Se_{2} chalcogenide represents a system containing magnetically ordered and superconducting phases simultaneously. In all investigated chalcogenide samples, about 90% of the total volume show the strong antiferromagnetic phase and 10% exhibit a paramagnetic behavior. Magnetization measurements reveal a 100% Meissner effect, while muSR clearly indicates that the paramagnetic phase is a perfect superconductor. Up to now, there is no clear evidence whether the antiferromagnetic phase is also superconducting. The microscopic coexistence and/or phase separation of superconductivity and magnetism is discussed. Moreover, a new hydrostatic double-wall pressure cell is developed and produced, satisfying the demands of muSR experiments. The designs and characteristics of the new pressure cell are reviewed in the present thesis.

This thesis deals with the deposition of epitaxial chalcogenide (Ge2Sb2Te5 (GST225), GeTe and Sb2Te3) thin films and superlattice (SL) arrangement based on GeTe-Sb2Te3 using pulsed laser deposition (PLD) technique on (111)-oriented Si substrates. The thin films are characterized using in-situ RHEED, XRD, SEM, AFM and TEM. The epitaxial trigonal GST225 films with out-of-plane c-plane orientation were grown in 2D growth mode. For the first group of the films (substrate-target distance (dts) of ~7.5 cm), the epitaxial window was observed from 200 °C to 300 °C. By varying laser frequency, deposition rate as high as 42 nm/ min can be achieved. The deposition with a slight reduction of dts to ~6 cm (second group) at moderate Ts of 220 °C results in the epitaxial films with heterogeneous vacancy structures (coexisting metastable phases. i.e. with random and ordered vacancies, and stable trigonal phase). Thermal annealing (at 220 °C) leads to a phase transformation towards a pure trigonal phase. The epitaxial Sb2Te3 films with out-of-plane (0001) oriented trigonal structure were grown at Ts from 140 to 280 °C in 2D growth mode. The optimum Ts in terms of deposition rate and film quality was determined to be 240 °C. The epitaxial growth of Sb2Te3 thin films is initiated by the self-organized formation of a Sb/Te single-atomic passivation layer on the Si surface. The growth of GeTe was initialized by the formation of an ultra-thin amorphous layer. The films were predominantly grown in the mix of 2D and 3D growth modes. The deposited films possesses trigonal structure out-of-plane (0001)-orientated on Si(111). By employing a 2D-bonded Sb2Te3 as a seeding layer on Si(111), the epitaxial window of GeTe can be extended especially towards the lower temperature regime, up to 145 °C. Additionally, the surface topography can be significantly improved, indicating that the films are grown in 2D growth mode on the buffered substrate. The epitaxial SLs can be grown starting at Ts = 140 °C. Each layer of the SLs, i.e. Sb2Te3 and GeTe layer, was grown in 2D growth mode. An intermixing of GeTe and Sb2Te3 layers occurred at a higher temperature deposition. Studies on local structure of 140 °C-deposited SL showed that the SL consists of Ge-rich Ge(x+y)Sb(2–y)Tez and Sb2Te3 units intercalated by Van der Waals gaps with the inhomogeneity of layer thickness across the SL. The obtained results demonstrate the feasibility of PLD for deposition of good quality epitaxial chalcogenide thin films and SL structure on Si(111).

During the DARPA SCENICC program, J. Ford, et al., demonstrated that CFBs provide a compelling route to compact, wide angle imagers. Monocentric lenses readily provide diffraction-limited images over wide field but onto a hemispherically curved image surface. They demonstrated visible CFBs can be tapered, cut and polished to relay curved images to flat sensors. We have shown that this provides a volumetric imaging efficiency a hundredfold larger than bulk optics can produce; a hundred times the resolution in the same volume or a hundred times less volume for the same resolution. Ford's work leveraged commercial fiber bundles available for the visible spectrum based on silica. We have developed hybrid fiber bundles using step-index confinement between chalcogenide glass cores and polymer cladding with high index-contrast. The high contrast is necessary to provide tight confinement to the high-index As-Se core with minimal crosstalk between closely spaced cores. Tight confinement also minimizes absorption losses in the PEI polymer cladding. The high contrast of this system also provides a large NA to optimize coupling into the CFB from fast lenses. We introduce disorder into the core radius as a mechanism to further decouple adjacent cores, reduce crosstalk and increase fill-factor. We present coupled-mode theory, modal crosstalk superposition, and finite-element modelling to quantify coupling losses and crosstalk as a function of geometry and disorder. We fabricated preforms, drew small fiber bundles and characterized optical properties of the bundles to aid scale-up to megapixel MWIR CFBs.

Results of this research are available online in two published papers. / The main focus of this research was to synthesize and then to characterize the potential high-performance thermoelectric materials. In this regard, we have prepared a series of pure RECuSe2 (with RE = Pr, Sm, Gd, Dy and Er) and RECuTe2 (with RE = Er, Dy and Gd) and analyzed their crystal structure, electronic and physical properties. We used powder and single crystal X-ray diffraction techniques to analyze their crystal structures and employed energy dispersive X-ray spectrometry (EDS) to verify their chemical compositions. The temperature stability of the synthesized samples was examined by differential thermal and gravimetrical analysis. The high-purity consolidated pellets were prepared for physical properties measurements. We analyzed the relationship between their crystal structures and pertinent electronic properties through the LMTO calculations. The RECuSe2 phases adopt two structures, monoclinic and trigonal. The monoclinic structure (P21/c, z = 4) is observed for lighter rare earths (RE = Pr, Sm and Gd) and Cu-disordered trigonal structure for heavier rare earths (P m1, z = 1, RE = Dy and Er). The resistivity and Seebeck coefficient measurements indicate that the studied selenides are p-type semiconductors with relatively small activation energies (0.045-0.12 eV). However, their electrical resistivities are too high (0.49-220 Ohmcm at room temperature) to make them competitive thermoelectric materials. Electronic structure calculations indicate presence of a band gap in the RECuSe2 phases. The synthesized RECuTe2 phases (RE = Er, Dy and Gd) adopt a monoclinic-distorted variant (C2/m, z = 2) of the trigonal structure (P m1, Z= 1) observed for the RECuSe2 (with RE = Dy, Er). While such disorder may be beneficial for lowering their thermal conductivity, large values of electrical resistivity (0.02-0.87 Ohmcm at room temperature) make these phases unsuitable for practical applications. Comparing to the corresponding semiconducting selenides, the tellurides have lower resistivities, and display a metallic type resistivity. Such behavior stems from the closure of band gaps, which is verified by the electronic structures calculations. Structurally the RECuTe2 phases (with RE = Er, Dy and Gd) are similar to RECuSe2 with the P m1 structure. The monoclinic distortion in RECuTe2 is driven by Cu displacement inside the larger tetrahedral voids in the hexagonal close packing of the Te atoms. Most likely, Cu shifts to one side of the Te tetrahedra to optimize the Cu-Te interactions. / Thesis / Candidate in Philosophy