Tato disertační práce se zabývá navržením nízkonapěťových, nízkopříkonových analogových obvodů, které používají nekonvenční techniky CMOS. Lékařská zařízení na bateriové napájení, jako systémy pro dlouhodobý fyziologický monitoring, přenosné systémy, implantovatelné systémy a systémy vhodné na nošení, musí být male a lehké. Kromě toho je nutné, aby byly tyto systémy vybaveny baterií s dlouhou životností. Z tohoto důvodu převládají v biomedicínských aplikacích tohoto typu nízkopříkonové integrované obvody. Nekonvenční techniky jako např. využití transistorů s řízeným substrátem (Bulk-Driven “BD”), s plovoucím hradlem (Floating-Gate “FG”), s kvazi plovoucím hradlem (Quasi-Floating-Gate “QFG”), s řízeným substrátem s plovoucím hradlem (Bulk-Driven Floating-Gate “BD-FG”) a s řízeným substrátem s kvazi plovoucím hradlem (Bulk-Driven Quasi-Floating-Gate “BD-QFG”), se v nedávné době ukázaly jako efektivní prostředek ke zjednodušení obvodového zapojení a ke snížení velikosti napájecího napětí směrem k prahovému napětí u tranzistorů MOS (MOST). V práci jsou podrobně představeny nejdůležitější charakteristiky nekonvenčních technik CMOS. Tyto techniky byly použity pro vytvoření nízko napěťových a nízko výkonových CMOS struktur u některých aktivních prvků, např. Operational Transconductance Amplifier (OTA) založené na BD, FG, QFG, a BD-QFG techniky; Tunable Transconductor založený na BD MOST; Current Conveyor Transconductance Amplifier (CCTA) založený na BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) založený na BD MOST; Winner Take All (WTA) and Loser Take All (LTA) založený na BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) založený na BD-QFG technice. Za účelem ověření funkčnosti výše zmíněných struktur, byly tyto struktury použity v několika aplikacích. Výkon navržených aktivních prvků a příkladech aplikací je ověřován prostřednictvím simulačních programů PSpice či Cadence za použití technologie 0.18 m CMOS.

Network-on-chip (NoC) based multi-processor systems-on-chip (MPSoCs) are promising candidates for future multi-processor embedded platforms, which are expected to be composed of hundreds of heterogeneous processing elements (PEs) to potentially provide high performances. However, together with the performances, the systems complexity will increase, and new high level design techniques will be needed to efficiently model, simulate, debug and synthesize them. System-level design (SLD) is considered to be the next frontier in electronic design automation (EDA). It enables the description of embedded systems in terms of abstract functions and interconnected blocks. A promising complementary approach to SLD is the use of models of computation (MoCs) to formally describe the execution semantics of functions and blocks through a set of rules. However, also when this formalization is used, there is no clear way to synthesize system-level models into software (SW) and hardware (HW) towards a NoC-based MPSoC implementation, i.e., there is a lack of system design automation (SDA) techniques to rapidly synthesize and prototype system-level models onto heterogeneous NoC-based MPSoCs. In addition, many of the proposed solutions require large overhead in terms of SW components and memory requirements, resulting in complex and customized multi-processor platforms. In order to tackle the problem, a novel model-based SDA flow has been developed as part of the thesis. It starts from a system-level specification, where functions execute according to the synchronous MoC, and then it can rapidly prototype the system onto an FPGA configured as an heterogeneous NoC-based MPSoC. In the first part of the thesis the HeartBeat model is proposed as a model-based technique which fills the abstraction gap between the abstract system-level representation and its implementation on the multiprocessor prototype. Then details are provided to describe how this technique is automated to rapidly prototype the modeled system on a flexible platform, permitting to adjust the system specification until the designer is satisfied with the results. Finally, the proposed SDA technique is improved defining a methodology to automatically explore possible design alternatives for the modeled system to be implemented on a heterogeneous NoC-based MPSoC. The goal of the exploration is to find an implementation satisfying the designer's requirements, which can be integrated in the proposed SDA flow. Through the proposed SDA flow, the designer is relieved from implementation details and the design time of systems targeting heterogeneous NoC-based MPSoCs on FPGA is significantly reduced. In addition, it reduces possible design errors proposing a completely automated technique for fast prototyping. Compared to other SDA flows, the proposed technique targets a bare-metal solution, avoiding the use of an operating system (OS). This reduces the memory requirements on the FPGA platform comparing to related work targeting MPSoC on FPGA. At the same time, the performance (throughput) of the modeled applications can be increased when the number of processors of the target platform is increased. This is shown through a wide set of case studies implemented on FPGA. / <p>QC 20140609</p>

<div>The huge gamut of today’s internet-connected embedded devices has led to increasing concerns regarding the security and confidentiality of data. To address these requirements, most embedded devices employ cryptographic algorithms, which are computationally secure. Despite such mathematical guarantees, as these algorithms are implemented on a physical platform, they leak critical information in the form of power consumption, electromagnetic (EM) radiation, timing, cache hits and misses, and so on, leading to side-channel analysis (SCA) attacks. Non-profiled SCA attacks like differential/correlational power/EM analysis (DPA/CPA/DEMA/CEMA) are direct attacks on a single device to extract the secret key of an encryption algorithm. On the other hand, profiled attacks comprise of building an offline template (model) using an identical device and the attack is performed on a similar device with much fewer traces.</div><div><br></div><div>This thesis focusses on developing efficient side-channel attacks and circuit-level low-overhead generic countermeasures. A cross-device deep learning-based profiling power side-channel attack (X-DeepSCA) is proposed which can break the secret key of an AES-128 encryption engine running on an Atmel microcontroller using just a single power trace, thereby increasing the threat surface of embedded devices significantly. Despite all these advancements, most works till date, both attacks as well as countermeasures, treat the crypto engine as a black box, and hence most protection techniques incur high power/area overheads.</div><div><br></div><div>This work presents the first white-box modeling of the EM leakage from a crypto hardware, leading to the understanding that the critical correlated current signature should not be passed through the higher metal layers. To achieve this goal, a signature attenuation hardware (SAH) is utilized, embedding the crypto core locally within the lower metal layers so that the critical correlated current signature is not passed through the higher metals, which behave as efficient antennas and its radiation can be picked up by a nearby attacker. Combination of the 2 techniques – current-domain signature suppression and local lower metal routing shows >350x signature attenuation in measurements on our fabricated 65nm test chip, leading to SCA resiliency beyond 1B encryptions, which is a 100x improvement in both EM and power SCA protection over the prior works with comparable overheads. Moreover, this is a generic countermeasure and can be utilized for any crypto core without any performance degradation.</div><div><br></div><div>Next, backed by our physics-level understanding of EM radiation, a digital library cell layout technique is proposed which shows >5x reduction in EM SCA leakage compared to the traditional digital logic gate layout design. Further, exploiting the magneto-quasistatic (MQS) regime of operation for the present-day CMOS circuits, a HFSS-based framework is proposed to develop a pre-silicon EM SCA evaluation technique to test the vulnerability of cryptographic implementations against such attacks during the design phase itself.</div><div><br></div><div>Finally, considering the continuous growth of wearable and implantable devices around a human body, this thesis also analyzes the security of the internet-of-body (IoB) and proposes electro-quasistatic human body communication (EQS-HBC) to form a covert body area network. While the traditional wireless body area network (WBAN) signals can be intercepted even at a distance of 5m, the EQS-HBC signals can be detected only up to 0.15m, which is practically in physical contact with the person. Thus, this pioneering work proposing EQS-HBC promises >30x improvement in private space compared to the traditional WBAN, enhancing physical security. In the long run, EQS-HBC can potentially enable several applications in the domain of connected healthcare, electroceuticals, augmented and virtual reality, and so on. In addition to these physical security guarantees, side-channel secure cryptographic algorithms can be augmented to develop a fully secure EQS-HBC node.</div>

Indiana University-Purdue University Indianapolis (IUPUI) / Lithium-ion batteries are widely used for portable electronics due to high energy density, mature processing technology and reduced cost. However, their applications are somewhat limited by safety concerns. The lithium-ion battery users will take risks in burn or explosion which results from some internal components failure. So, a practical method is required urgently to find out the failures in early time. In this thesis, a new method based on temperature difference between internal point and surface (TDIS) of the battery is developed to detect the thermal failure especially the thermal runaway in early time. A lumped simple thermal model of a lithium-ion battery is developed based on TDIS. Heat transfer coefficients and heat capacity are determined from simultaneous measurements of the surface temperature and the internal temperature in cyclic constant current charging/discharging test. A look-up table of heating power in lithium ion battery is developed based on the lumped model and cyclic charging/discharging experimental results in normal operating condition. A failure detector is also built based on TDIS and reference heating power curve from the look-up table to detect aberrant heating power and bad parameters in transfer function of the lumped model. The TDIS method and TDIS detector is validated to be effective in thermal runaway detection in a thermal runway experiment. In the validation of thermal runway test, the system can find the abnormal heat generation before thermal runaway happens by detecting both abnormal heating power generation and parameter change in transfer function of thermal model of lithium ion batteries. The result of validation is compatible with the expectation of detector design. A simple and applicable detector is developed for lithium ion battery catastrophic failure detection.

Les études qui seront présentées dans le cadre de cette thèse portent sur le développement et l’optimisation des techniques pour la modélisation compacte des transistors bipolaires à hétérojonction (TBH). Ce type de modélisation est à la base du développement des bibliothèques de composants qu’utilisent les concepteurs lors de la phase de simulation des circuits intégrés. Le but d’une technologie BiCMOS est de pouvoir combiner deux procédés technologiques différents sur une seule et même puce. En plus de limiter le nombre de composants externes, cela permet également une meilleure gestion de la consommation dans les différents blocs digitaux, analogiques et RF. Les applications dites rapides peuvent ainsi profiter du meilleur des composants bipolaires et des transistors CMOS. Le défi est d’autant plus critique dans le cas des applications analogiques/RF puisqu’il est nécessaire de diminuer la puissance consommée tout en maintenant des fréquences de fonctionnement des transistors très élevées. Disposer de modèles compacts précis des transistors utilisés est donc primordial lors de la conception des circuits utilisés pour les applications analogiques et mixtes. Cette précision implique une étude sur un large domaine de tensions d’utilisation et de températures de fonctionnement. De plus, en allant vers des nœuds technologiques de plus en plus avancés, des nouveaux effets physiques se manifestent et doivent être pris en compte dans les équations du modèle. Les règles d’échelle des technologies plus matures doivent ainsi être réexaminées en se basant sur la physique du dispositif. Cette thèse a pour but d’évaluer la faisabilité d’une offre de modèle compact dédiée à la technologie avancée SiGe TBH de chez ST Microelectronics. Le modèle du transistor bipolaire SiGe TBH est présenté en se basant sur le modèle compact récent HICUMversion L2.3x. Grâce aux lois d’échelle introduites et basées sur le dessin même des dimensions du transistor, une simulation précise du comportement électrique et thermique a pu être démontrée.Ceci a été rendu possible grâce à l’utilisation et à l’amélioration des routines et méthodes d’extraction des paramètres du modèle. C’est particulièrement le cas pour la détermination des éléments parasites extrinsèques (résistances et capacités) ainsi que celle du transistor intrinsèque. Finalement, les différentes étapes d’extraction et les méthodes sont présentées, et ont été vérifiées par l’extraction de bibliothèques SPICE sur le TBH NPN Haute-Vitesse de la technologie BiCMOS avancée du noeud 55nm, avec des fréquences de fonctionnement atteignant 320/370GHz de fT = fmax. / The aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology.