The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.

Thesis (Ph.D.)--University of Delaware, 2006. / Principal faculty advisor: Michael W. Haney, Dept. of Electrical and Computer Engineering. Includes bibliographical references.

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.

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Recently, the government makes good an environment and fully support to semiconductor industries from top to bottom covering the wafer foundry, IC design and equipment testing in Taiwan. Therefore, most of semiconductor brands which are very famous in the international. In early stages, Taiwanese electronic makers which were from OEM (Original Equipment Manufacturing, OEM) model to get resources, technologies and market information. They were became designers and have own R & D via the cooperation of international companies. And also got business form ODM (Original Design Manufacturing, ODM) to its own brand (Own Brand Manufacturing, OBM) direct management about the smile curve at both ends of the market to earn profits. In this study, Taiwan's IC design industry point of view of IC critical success factors of its own brand. In addition, to gathering in DC-FAN motor driving circuits in Taiwan. There are two related information of major leading brands for study. Through "qualitative research" in depth interviews of experts within the industry leader for the interview study, to find out its own brand of IC critical success factors. This research through the collation of expert interviews found that the market should impetus to fully service, increase innovative business models and strengthen integrated development of the semiconductor supply chains to get high techniques for next generation of products. And, to make good relationship with high position of customers that is critical success factors in its own brand. Moreover, it is a base of planning new products for the further. Hope, these findings could offer and give suggestion to industries as a reference. There is a model for reference when some one faces to similar situation.

Using GaAs HBT provided by AWSC to construct Gummel Poon static model.then using the GaAs HBT processing of GCS to design MMIC power amplifier for the 1.9~2.0 GHz PCS system. This power amplifier exhibits an output power of 27dBm and a power added efficiency as high as 32% at an operation voltage of 3.4V.

Thesis (Ph. D.)--School of Electrical and Computer Engineering, Georgia Institute of Technology, 2004. Directed by James D. Miendl. / Vita. Includes bibliographical references.

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