Intermediate band (IB) materials have attracted considerable research interest since they can dramatically enhance the near infrared light absorption and lead to applications in the fields of so-called intermediate band solar cells or infrared photodetectors. Hyperdoping Si with deep level impurities is one of the most effective approaches to form an IB inside Si. In this thesis, titanium (Ti) or chalcogen doped Si with concentrations far exceeding the Mott transition limits (~ 5×10^19 cm-3 for Ti) are fabricated by ion implantation followed by pulsed laser annealing (PLA) or flash lamp annealing (FLA). The structural and electrical properties of the implanted layer are investigated by channeling Rutherford backscattering spectrometry (cRBS) and Hall measurements. For Si supersaturated with Ti, it is shown that Ti-implanted Si after liquid phase epitaxy shows cellular breakdown at high doping concentrations during the rapid solidification, preventing Ti incorporation into Si matrix. However, the out-diffusion and the cellular breakdown can be effectively suppressed by solid phase epitaxy during FLA, leading to a much higher Ti incorporation. In addition, the formed microstructure of cellular breakdown also complicates the interpretation of the electrical properties. After FLA, the samples remain insulating even with the highest Ti implantation fluence, whereas the sheet resistance decreases with increasing Ti concentration after PLA. According to the results from conductive atomic force microscopy (C-AFM), the decrease of the sheet resistance after PLA is attributed to the percolation of Ti-rich cellular walls, but not to the insulator-to-metal transition due to Ti-doping. Se-hyperdoped Si samples with different Se concentrations are fabricated by ion implantation followed by FLA. The study of the structural properties of the implanted layer reveals that most Se atoms are located at substitutional lattice sites. Temperature-dependent sheet resistance shows that the insulator-to-metal transition occurs at a Se peak concentration of around 6.3 × 10^20 cm-3, proving the formation of an IB in host semiconductors. The correlation between the structural and electrical properties under different annealing processes is also investigated. The results indicate that the degrees of crystalline lattice recovery of the implanted layers and the Se substitutional fraction depend on pulse duration and energy density of the flash. The sample annealed at short pulse durations (1.3 ms) shows better conductivity than long pulse durations (20 ms). The electrical properties of the hyperdoped layers can be well-correlated to the structural properties resulting from different annealing processes.:Chapter 1 Introduction 1 1.1 Shallow and Deep level impurities in semiconductors 1 1.2 Challenges for hyperdoping semiconductors with deep level Impurities 2 1.3 Solid vs. liquid phase epitaxy 5 1.4 Previous work 7 1.4.1 Transition metal in Si 7 1.4.2 Chalcogens in Si 10 1.5 The organization of this thesis 15 Chapter 2 Experimental methods 18 2.1 Ion implantation 18 2.1.1 Basic principle of ion implantation 18 2.1.2 Ion implantation equipment 19 2.1.3 Energy loss 20 2.2 Pulsed laser annealing (PLA) 23 2.3 Flash lamp annealing (FLA) 24 2.4 Rutherford backscattering and channeling spectrometry (RBS/C) 27 2.4.1 Basic principles 27 2.4.2 Analysis of the elements in the target 28 2.4.3 Channeling and RBS/C 29 2.4.4 Analysis of the impurity lattice location 31 2.5 Hall measurements 31 2.5.1 Sample preparation 32 2.5.2 Resistivity 32 2.5.3 Hall measurements 33 Chapter 3 Suppressing the cellular breakdown in silicon supersaturated with titanium 34 3.1 Introduction 34 3.2 Experimental 35 3.3 Results 36 3.4 Conclusions 42 Chapter 4 Titanium-implanted silicon: does the insulator-to-metal transition really happen? 44 4.1 Introduction 44 4.2 Experimental section 45 4.3 Results 47 4.3.1 Recrystallization of Ti-implanted Si 47 4.3.2 Lattice location of Ti impurities 48 4.3.3 Electrical conduction 50 4.3.4 Surface morphology 52 4.3.5 Spatially resolved conduction 53 4.4 Discussion 55 4.5 Conclusion 56 Chapter 5 Realizing the insulator-to-metal transition in Se hyperdoped Si via non-equilibrium material processing 57 5.1 Introduction 57 5.2 Experimental 59 5.3 Results 60 5.4 Conclusions 65 Chapter 6 Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing 67 6.1 Introduction 67 6.2 Experimental 68 6.3 Results 69 6.4 Conclusions 76 Chapter 7 Summary and outlook 78 7.1 Summary 78 7.2 Outlook 81 References 83 Publications 89

Germanium (Ge) is the most compatible semiconductor material with silicon-based complementary metal-oxide semiconductor technology, which has higher electron and hole mobility than Si, leading to enhanced device performance. In addition, semiconductor nanowires (NWs) have attracted significant attention as promising candidates for next-generation nanoscale devices. Due to their unique geometry and physical properties, NWs show excellent optical and electrical properties such as quantum size effects, enhanced light absorption, and high biological and chemical sensitivity. Furthermore, high response to light irradiation is one of the most significant properties of semiconductor NWs, which makes them excellent candidates for photodetectors. Hence, Ge NWs are promising high-mobility nanostructures for optoelectronic devices. Despite constant improvement in the performance of single NW-based devices, determining their electrical properties remains challenging. Here, a symmetric six-contact Hall bar configuration is developed for top-down fabricated highly doped Ge NWs with different widths down to 30 nm, which simultaneously facilitates Hall effect and four-probe resistance measurements. Furthermore, accurate control of doping and fabrication of metal contacts on n-type doped Ge NWs with low resistance and linear characteristics remain significant challenges in Ge-based devices. Therefore, a combined approach is reported to fabricate Ohmic contacts on n-type doped Ge NWs using ion implantation and rear-side flash lamp annealing. This approach allows the fabrication of axial p–n junctions along the single NWs with different widths. The fabricated devices demonstrated rectifying characteristics in dark conditions. The photoresponse of the axial p–n junction photodetectors was investigated under three different illumination wavelengths of 637 nm, 785 nm, and 1550 nm. Moreover, the fabricated axial p–n junction photodetector demonstrated a high-frequency response up to 1 MHz at zero bias.

Using shallow implantation of ions and molecules with masses centred at 27 atomic mass units(amu) in diamond, a new artificial optical centre with unique properties has been created. The centre shows a linearly polarised fluorescence with a main narrow emission line mostly found at 582 nm, together with a weak vibronic sideband at room temperature. The fluorescence lifetime is∼2 ns and the brightest centres are more than three times brighter than the nitrogen-vacancy centres. A majority of the centres shows stable fluorescence whereas some others present a blinking behaviour, at faster or slower rates. Furthermore, a second kind of optical centre has been simultaneously created in the same diamond sample, within the same ion implantation run. This centre has a narrow zero-phonon line (ZPL) at∼546 nm and a broad phonon sideband at room temperature. Interestingly, optically detected magnetic resonance (ODMR) has been measured on several single 546 nm centres and two resonance peaks are found at 0.99 and 1.27 GHz. In view of their very similar ODMR and optical spectra, the 546 nm centre is likely to coincide with the ST1 centre, reported once (with a ZPL at 550 nm), but of still unknown nature. These new kinds of centres are promising for quantum information processing, sub-diffraction optical imaging or use as single-photon sources.

Lithium niobate (LiNbO3) is a human-made crystalline which is widely used in modern photonics due to its useful properties. In recent years, there has been significant progress in the development of lithium niobate on insulator (LNOI) technology, realizing a fully functional photonic integrated circuits, thanks to its capabilities in both electro-optics and second-order optical nonlinearity. To integrate laser source and amplifier onto the photonic integrated chips, rare-earth-ion doping has been considered while traditional laser source is difficult to integrate on chip. Among the rare-earth ions, erbium ions can provide laser source at 1550nm, which can meet the requirements of high-speed telecommunication band. In this thesis, we investigated a recent-made erbium-implanted LNOI sample through setting up a homebuilt microscope system. By exciting the erbium-implanted area with 980nm continuous wave laser, the emission light around 1550nm was collected and measured. Developing the setup with an automatic scanning code, the photoluminescence response of the implanted area on the sample was mapped. Conclusively, the investigation of the implanted samples demonstrated that the erbium-ion emitters could emit measurable photoluminescence signal around 1550 nm wavelength in spite of background noise and notably at room temperature. These results demonstrated the capability of the designed microscope while still need to be improved in terms of detectors sensitivity and signal to noise ratio. It also revealed the promising implantation of active Er ions into LNOI chips conveying the fabrication of Er photon sources on thin film lithium niobate in next step. / Lithiumniobat (LiNbO_3) är en konstgjord kristall som är allmänt använd inom modern fotonik på grund av dess användbara egenskaper. Under de senaste åren har det skett betydande framsteg inom utvecklingen av teknologin för litiumniobat på isolator (LNOI), vilket har resulterat i fullt fungerande fotoniska integrerade kretsar, tack vare dess förmågor inom både elektrooptik och optisk icke-linjäritet av andra ordningen. För att integrera laserskälla och förstärkare på de fotoniska integrerade kretsarna har överväganden gjorts om tillsats av sällsynta jordartsmetaller, eftersom det är svårt att integrera traditionella laserskällor på kretsar. Bland de sällsynta jordartsmetalljonerna kan erbiumjoner fungera som laserskälla vid 1550 nm, vilket uppfyller kraven för höghastighetstelekommunikationsbandet. I denna avhandling undersökte vi nyligen tillverkat ett LNOI-prov som hade implanterats med erbiumjoner genom att bygga upp ett hemgjort mikroskopsystem. Genom att excitera det erbium-implanterade området med en 980 nm kontinuerlig våglaser samlades och mättes utstrålningen vid 1550 nm. Genom att utveckla installationen med en automatisk skanningskod kartlades fotoluminescensresponsen hos det implanterade området på provet. Sammantaget visade undersökningen av de implanterade proverna att erbiumjonemitterare kunde avge mätbara fotoluminescenssignaler vid en våglängd omkring 1550 nm trots bakgrundsbuller och framför allt vid rumstemperatur. Dessa resultat bekräftade mikroskopets kapacitet, även om förbättringar behövs vad gäller detektorns känslighet och signal-till-brusförhållandet. De avslöjade också den lovande implanteringen av aktiva Er-joner i LNOI-kretsar och möjligheten att tillverka Er-fotonkällor på tunna filmer av litiumniobat i nästa steg.

Oxygen in single crystalline antimony triselenide (Sb₂Se₃) is addressed by infrared (IR) absorption spectroscopy. Measurements conducted on Sb₂Se₃ samples doped—during growth, post-growth annealing in the O₂ ambient, or by O ion implantation—with ¹⁶O reveal an IR absorption line at 527 cm⁻¹ (10 K). Substitution of ¹⁶O by ¹⁸O “red”-shifts the signal down to 500 cm⁻¹ based on which the line is assigned to a local vibrational mode of an isolated oxygen defect. Annealing of O-enriched samples in hydrogen atmosphere at temperatures above 380 °C results in the suppression of the 527-cm⁻¹ line and concurrent appearance of the signals due to hydroxyl groups, suggesting formation of oxygen-hydrogen complexes. The configuration of the 527-cm⁻¹ oxygen center is discussed.

<p>The development of a deuterium-deuterium/ tritium-deuterium (D-D/ D-T) pulsed neutron generator based on the principle of the Plasma Immersion Ion Implantation (PI3) technique is presented, in terms of investigating development of a compact system to generate an ultra short burst of mono-energetic neutrons (of order 1010 per second) during a short period of time (&lt / 20&mu / s) at repetition rates up to 1 kHz. The system will facilitate neutron detection techniques, such as neutron back-scattering, neutron radiography and time-of-flight activation analysis.</p> <p><br /> Aspects addressed in developing the system includes (a) characterizing the neutron spectra generated as a function of the target configuration/ design to ensure a sustained intense neutron flux for long periods of time, (b) the system was also characterised as a function of power supply operating conditions such as voltage, current, gas pressure and plasma density.</p>

Cette thèse a pour objectif d’apporter des informations quantitatives sur la mobilité de l’hélium dans des céramiques nucléaires avancées comme TiC, TiN et ZrC, soumises à des traitements thermiques ou bien en présence de dommages d’irradiation. L’approche expérimentale développée au cours de ce travail est basée sur l’implantation ionique d’ions d’hélium-3 de 3 MeV en profondeur dans les trois matériaux précédemment cités et sur la mesure du profil de concentration en profondeur de l’isotope 3He au moyen d’une réaction nucléaire spécifique induite par des deutérons, 3He(d, p0)4He. La microscopie électronique à transmission et la spectrométrie Raman sont couplées à l’analyse par réaction nucléaire.Parmi les principaux résultats obtenus :- aucun relâchement d’hélium n’est observé à température ambiante pour les trois composés. Les valeurs d’énergie d’activation associée au relâchement d’hélium après un recuit thermique dans l’intervalle 1100 – 1600°C sont comprises entre 0,77 et 1,2 eV et semblent étroitement liées à la microstructure initiale du composé (stoéchiométrie et taille de grains). La capacité de rétention de l’hélium-3 dans des carbures ou nitrures de métaux de transition soumis à des traitements thermiques en conditions contrôlées croît dans l’ordre ZrC < TiC < TiN.- la formation de blisters n’et observée qu’à la surface de ZrC.- les profils d’implantation d’hélium présentent deux composantes pour les trois matériaux, l’une située au voisinage de la fin de parcours des ions et la seconde plus proche de la surface. Cette dernière résulte probablement du piégeage d’atomes d’hélium par les lacunes natives présentes.- les valeurs obtenues pour le coefficient apparent de diffusion de l’hélium varient dans l’intervalle 3,58E-19 – 5,296E-18 m^2s^-1 pour TiN et 4,20E-18 – 2,59E-17 m^2s^-1 pour TiC.Les valeurs correspondantes obtenues pour l’énergie d’activation sont respectivement de 2,50 eV pour TiC et de 1,05 eV pour TiN. Le mécanisme impliqué repose sur une dissociation des amas atomes d’hélium – lacunes au voisinage de la fin de parcours des ions. Plus en surface, la diffusion est plutôt du type substitutionnel.- l’observation au MET de sections transverses de TiN préparées par la technique FIB révèlent la présence de bulles d’hélium dès recuit à 1100°C et montrent la croissance des bulles avec la température. L’énergie d’activation de croissance des bulles a été estimée à 0,38 eV. A partir de 1400°C, cette croissance résulte vraisemblablement de l’absorption de lacunes par les amas.- la pression interne des bulles a été calculée à l’aide du modèle de Trinkaus, et nous avons montré qu’à partir de 1500°C, cette pression tendait à s’approcher de la valeur du module de cisaillement de TiN (240 GPa) et qu’elle atteignait la pression d’équilibre de 2 GPa à 1600°C.- à 1100°C, il semble que la densité des bulles présentes dans TiN varie linéairement avec la fluence d’implantation. A 1500°C, la taille des bulles est d’autant plus grande que la fluence est faible.- pour ZrC, l’effet de la fluence sur la mobilité de l’hélium est comparable à celui observé pour TiN. A la plus basse fluence, le relâchement d’hélium est très faible. Il croît avec la température de recuit et avec la fluence d’implantation.- la pré-Irradiation des trois composés par des auto-Ions avant implantation d’hélium provoque une augmentation de la dureté au moins =jusqu’à une dose de 27 dpa. Une très faible augmentation du paramètre de maille est alors détectée (≤ 0.5%).- dans le cas de ces matériaux non amorphisables sous irradiation aux ions, le recuit par perte d’énergie électronique ou bien le pré-Endommagement balistique ne jouent a priori aucun rôle sur la mobilité de l’hélium, étudiée sous l’angle d’une activation thermique. / While the current second and third generation nuclear plant designs provides an economically, technically, and publicly acceptable electricity supply in many markets, further advances in nuclear energy system design can broaden the opportunities for the use of nuclear energy. The fourth generation of nuclear reactors is under development. These new reactors are designed with the following objective in mind: sustainability, safety and reliability, economics, proliferation resistance. Out of six Generation IV systems namely, Gas-Cooled Fast Reactor (GFR), Lead-Cooled fast reactor (LFR), Molten Salt Reactor (MSR), Sodium-Cooled Fast Reactor (SFR), Supercritical-Water-Cooled Reactor (SCWR), Very-High-Temperature Reactor (VHTR), this work is dedicated to identify specific fuel type that is compatible with gas-Cooled fast reactor (GFR) in-Core service conditions and could be extended to diagnose potential cladding material for SFR. The French strategy is mainly oriented towards the development of sodium-Cooled fast reactors (SFR) and very slightly focused on GFR. This dissertation is focused on the study of transition metal ceramics which are candidates for fuel coatings in GFR and have been considered as potential cladding materials for SFR. The specific fuel type in GFR should consists of spherical fuel particle made up of UC or UN, surrounded by a ceramic coating which provides structural integrity and containment of fission products. The most promising candidates for ceramic coatings are ZrN, ZrC, TiN, TiC & SiC due to a combination of neutronic performance, thermal properties, chemical behavior, crystal structure, and physical properties. It is obvious that these ceramics would be exposed to energetic fission products from fuel such as heavy ions and neutrons. These high-Energy neutron will knock the atoms in the surrounding materials and can induce (n, α) reactions, thus producing high concentration of helium atoms during and after reactor operation. The helium atoms produced are energetic and can easily penetrate into the surrounding material. Helium atoms are considered to be highly insoluble in previously studied structural nuclear materials. The accumulation of helium into solid matrix, can lead to the formation of bubbles, cavity, swelling, embrittlement etc. Helium can strongly induce grain boundary cavitation that can produce formation of inter-Granular channels, which may serve as pathways for release of radioactive elements to the environment or lead to grain-Boundary weakening and de-Cohesion. Particularly in ceramics, large quantities of helium can also lead to dimensional changes and cracks due to over-Pressurized helium bubbles. Therefore, study of helium behavior in advanced nuclear ceramics under high operating temperatures and extreme radiation conditions predicted for GFRs is viewed as crucial. In this thesis, ion-Implantation technique and material characterization techniques are used to study diffusion of helium in transition metal ceramics under thermal and extreme irradiation environments. Our main aim during this thesis is: 1) To calculate diffusion and migration energies of helium under different experimental conditions by applying theoretical models on experimental data.2) To investigate the role of microstructure such as grain boundaries, native vacancies and porosity on helium accumulation and its evolution after helium accumulation.3) To know the role of helium introduction conditions on helium diffusion. 4) To establish and validate an approach to calculate pressure built by helium gas inside the bubbles and to verify if the pressure approaches mechanical stability limit.

Nos dias atuais, grande parte das intervenções cirúrgicas inclui o implante de materiais. Os grandes obstáculos na implantação de próteses em organismos humanos são a coagulação sanguínea em contato com o material devido ao alto grau de ativação plaquetária e a compatibilidade dos tecidos biológicos ao material implantado. Agregando melhorias de propriedades mecânicas a superfícies biocompatíveis, materiais poliméricos apresentam grandes tendências a serem excelentes candidatos a biomateriais para tais aplicações. O objetivo deste trabalho foi realizar modificações superficiais em polímeros através do método de implantação por feixe iônico a fim de se investigar mudanças induzidas em suas propriedades superficiais e estudar possíveis mudanças em sua biocompatibilidade, em específico, sua hemocompatibilidade. Amostras de policarbonato foram irradiadas com feixes de íons de argônio com energia 23 keV e cinco diferentes doses. As superfícies das amostras foram analisadas com medidas de ângulo de contato, microscopia de força atômica, espectroscopia de massa de íons secundários, espectroscopia de fotoelétrons, espectroscopia de retroespalhamento Rutherford, deteção de recuo elástico, espectroscopia de raios-X induzidos por partículas e testes de adesão plaquetária. Os resultados das diferentes técnicas apontaram de forma consistente a uma série de alterações químicas e físicas induzidas nas superfícies das amostras, dentre elas: a perda significativa de hidrogênio nas amostras irradiadas, aumento do grau de reticulação entre as cadeias poliméricas que levou ao aumento de elétron deslocalizados e mudança de coloração, remoção de aditivos, migração à superfície de átomos de argônio implantados e alteração de hidrofilicidade. Ao confrontar todos os resultados obtidos com os resultados dos testes de adesão plaquetária, constatou-se que os efeitos observados aumentam o caráter trombogênico da superfície do policarbonato e que a remoção de aditivos com grupos sulfato e sulfonato após irradiação com argônio teve grande influência em tal aumento. / In the current days, a big part of the surgical interventions includes the implant of materials. The great obstacles for prosthesis implantation in living organisms are the blood clotting when in contact to the material due to a high level of platelet activation and the biological tissues compatibility to the implanted material. By joining improvements on mechanical properties to biocompatible surfaces, polymer materials present high tendencies to be excellent biomaterials candidates for such applications. The objective of this work was to perform surface modification in polymers through the ion beam implantation method in order to investigate changes induced in their surface properties and study possible biocompatibility changes. Samples of polycarbonate were irradiated with argon ion beam with 23 keV energy and different doses. The surfaces of the samples were analyzed by contact angle measurements, atomic force microscopy, secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy, elastic recoil detection, particle induced x-ray spectroscopy and platelet adhesion tests. The results from the different techniques pointed consistently to a series of chemical and physical changes induced on the samples\' surfaces, such as: significant loss of hydrogen for the irradiated samples, increase of cross-linking between polymer chains which led to the increase of delocalized electrons and color change, removal of additives, migration of argon atoms to the surface and hydrophilicity changes. By comparing all the obtained results to the platelet adhesion tests results, it was found that the observed effects increase the thrombogenic characteristic of the polycarbonate surface and that the removal of additives with sulfate and sulfonate groups after the argon irradiation had great influence on such increase.

Eletrônica utilizando polímero em substituição ao silício é uma área de pesquisa recente com perspectivas econômicas promissoras. Compósitos de polímeros com partículas metálicas apresentam interessantes propriedades elétricas, magnéticas e ópticas e têm sido produzidos por uma grande variedade de técnicas. Implantação iônica de metais utilizando plasma é um dos métodos utilizados para obtenção desses compósitos condutores. Neste trabalho é realizada implantação de íons de ouro de baixa energia em PMMA utilizando plasma. O PMMA tem grande importância tecnológica sendo largamente utilizado como resiste em litografias por feixe de elétrons, raios-X, íons e deep-UV. Como resultado da implantação iônica de baixa energia em PMMA há formação de uma camada nanométrica de material condutor. Esse novo material, denominado compósito isolante-condutor, permite criar micro e nanodispositivos através de técnicas largamente utilizadas em microeletrônica. Medidas elétricas são realizadas in situ em função da dose de íons metálicos implantada, o que permite um estudo das propriedades de transporte desses novos materiais, que podem ser modeladas pela teoria da percolação. Simulações utilizando o programa TRIDYN permitem obter a profundidade e o perfil da implantação dos íons. São mostradas caracterizações importantes tais como Microscopia Eletrônica de Transmissão, Microscopia de Varredura por Tunelamento, Espalhamento de Raios-X a Baixos Ângulos, Difração de Raios-X e Espectroscopia UV-vis. Essas técnicas permitem visualizar e investigar o caráter nanoestruturado do compósito metal-polímero. Ainda como parte deste projeto, as camadas condutoras formadas no polímero são caracterizadas quanto à manutenção das suas características de elétron resiste. / Electronics using polymers instead of silicon is a recent research area with promising economic perspectives. Polymer with metallic particles composites presents interesting electrical, magnetic and optical properties and they have been produced by a broad variety of techniques. Metal ion implantation using plasma is one of the used methods to obtain conductor composites. In this work it is performed low energy gold ion implantation in PMMA by using plasma. PMMA has great technological importance once it is broadly used as resist in electron-beam, X-ray, ion and deep UV lithography. As a result of low energy ion implantation in PMMA, a nanometric conducting layer is formed. This new material, named insulator-conductor composite, can allow the creation of micro and nanodevices through well known microelectronics techniques. Electrical measurements are performed in situ as a function of metal ions implanted dose, which allows the investigation of electrical transport of these new materials, which can be modeled by the percolation theory. Simulations using TRIDYN computer code provide the prediction of depth profile of implanted ions. Important characterizations are showed such as Transmission Electron Microscopy, Scanning Tunneling Microscopy, Small Angle X-Ray Scattering, X-Ray Diffraction and UV-vis Spectroscopy. These techniques allow to visualize and to investigate the nanostructured character of the metal-polymer composite. Still as a part of this project, the conducting layers formed are characterized in relation to the maintenance of their characteristics as electron-beam resist.

Esta pesquisa engloba o estudo e desenvolvimento de novas heteroestruturas semicondutoras, tomando como base as estruturas SOI (Silicon-On-Insulator - silício sobre isolante) obtidas pela técnica Smart Cut, estudadas nestes últimos anos no Departamento de Engenharia de Sistemas Eletrônicos da Escola Politécnica da Universidade de São Paulo (EPUSP). Esta técnica combina a solda direta para a união de lâminas e a implantação iônica (I/I) de íons leves para a separação de camadas especificadas. São essenciais na preparação destas estruturas SOI, processos de I/I, limpeza e ativação das superfícies das lâminas e recozimentos em fornos a temperaturas moderadas. Estudamos também, diferentes métodos para a obtenção de novas heteroestruturas, basicamente combinando as técnicas de fabricação da estrutura SOI e os métodos de formação do carbeto de silício (SiC), que chamaremos de heteroestruturas SiCOI (Silicon Carbide-On-Insulator). O método usado para a formação do SiC depende, em cada caso, das características desejadas para o filme que, ao mesmo tempo, estão relacionadas com a aplicação à qual estará destinado. Analisamos três métodos de obtenção do material SiC com características específicas diferentes. A metodologia proposta aborda as seguintes tarefas: Tarefa 1: Obtenção de estruturas SOI pelo método convencional utilizado em trabalhos anteriores e melhoramento das características superficiais da estrutura resultante. Tarefa 2: partindo de uma lâmina de Si previamente coberta por uma camada isolante, fabricar a heteroestrutura SiC/isolante/Si, onde a camada de SiC é crescida pelo método de deposição química de vapor assistida por plasma (PECVD). O filme obtido por deposição PECVD é amorfo e portanto são necessárias etapas de cristalização posteriores ao crescimento. Tarefa 3: partindo de uma estrutura SOI, fabricar a heteroestrutura SiC/SiO2/Si, onde a camada de SiC é obtida por implantação de íons de carbono (C+) na camada ativa de Si da estrutura SOI para sua transformação em SiC. Tarefa 4: partindo de uma estrutura SOI, fabricar a heteroestrutura SiC/SiO2/Si, onde a camada de SiC é obtida por conversão direta da camada ativa de Si da estrutura SOI em SiC como resultado da carbonização do Si usando exposição a ambiente de hidrocarbonetos. Como resultado deste trabalho foram obtidas estruturas SOI Smart Cut com valor médio de rugosidade superficial dentro dos valores esperados segundo a bibliografia consultada. Durante o desenvolvimento de heteroestruturas SiC/isolante/Si obtidas utilizando a técnica de PECVD obtivemos filmes com boas características estruturais. Os recozimentos feitos em ambiente de N2 aparentemente trazem resultados satisfatórios, conduzindo à completa cristalização dos filmes. Nas análises feitas para a fabricação de heteroestruturas SiC/isolante/Si utilizando I/I de carbono confirma-se a formação de c-SiC depois de realizado o recozimento térmico. / In this work we study new semiconductors heterostructures, based on SOI (Silicon-On- Insulator) structures obtained by \"Smart-Cut\" process, that were studied in the last years at Departamento de Engenharia de Sistemas Eletrônicos da Escola Politécnica da Universidade de São Paulo (EPUSP). This technique combines high-dose hydrogen ion implantation (I/I) and direct wafer bonding. To produce SOI structures some processes are essential: I/I process, cleaning and activation of the surfaces, and conventional thermal treatments at moderated temperatures. We also investigate different methods to obtain new heterostructures, basically combining SOI technologies and silicon carbide (SiC) growth processes, which will be called as SiCOI (Silicon Carbide-On-Insulator) heterostructures. The utilized methods to obtain the SiC are related, in each case, with the desired film\'s characteristics, which at the same time are associated with the final application. We analyze three methods to obtain SiC material with specific different characteristics. The proposed methodology approaches the following tasks: Task 1: Fabrication of SOI structures by the conventional technology previously used by us, and the improvement of superficial characteristic of the final structure. Task 2: Fabrication of SiC/insulator/Si heterostructures from Si substrate previously covered with an insulator capping layer, where the SiC layer is deposited by plasma enhanced chemical vapor deposition (PECVD). The PECVD film is amorphous and therefore, a thermal annealing step is necessary for crystallization. Task 3: Fabrication of SiC/SiO2/Si heterostructures from SOI structure, where the SiC layer is synthesized through a high dose carbon implantation into the thin silicon overlayer of a SOI wafer. Task 4: Fabrication of SiC/SiO2/Si heterostructures from SOI structure, where the SiC layer is achieved by direct carbonization conversion of the silicon overlayer of a SOI wafer In this work we have obtained Smart Cut SOI structures with surface roughness similar to the previous reported. We also obtained SiC/insulator/Si heterostructures with good structural characteristics using PECVD technique. The investigated N2 thermal annealing appears to be suitable for the crystallization of all the amorphous films deposited by PECVD. We have shown the possibility of using carbon ion implantation and subsequent thermal annealing to form c-SiC for SiC/insulator/Si heterostructures.