Single self-assembled semiconductor quantum dots (QDs) are able to emit single-photons and entangled-photons pairs. They are therefore considered as potential candidate building blocks for quantum information processing (QIP) and communication. To exploit them fully, the ability to precisely control their optical properties is needed due to several reasons. For example, the stochastic nature of their growth ends up with only little probability of finding any two or more QDs emitting indistinguishable photons. These are required for two-photon quantum interference (partial Bell-state measurement), which lies at the heart of linear optics QIP. Also, most of the as-grown QDs do not fulfil the symmetries required for generation of entangled-photon pairs. Additionally, tuning is required to establish completely new systems, for example, 87Rb atomic-vapors based hybrid semiconductoratomic (HSA) interface or QDs with significant heavy-hole (HH)-light-hole (LH) mixings. The former paves a way towards quantum memories and the latter makes the optical control of hole spins much easier required for spin- based QIP. This work focuses on the optical properties of a new type of QDs optimized for HSA experiments and their broadband tuning using strain. It was created by integrating the membranes, containing QDs, onto relaxor-ferroelectric actuators and was quantified with a spatial resolution of ~1 µm by combining measurements of the µ-photoluminescence of the regions surrounding the QDs and dedicated modeling. The emission of a neutral exciton confined in a QD usually consists of two fine-structure-split lines which are linearly polarized along orthogonal directions. In our QDs we tune the emission energies as large as ~23meV and the fine-structure-splitting by more than 90 µeV. For the first time, we demonstrate that strain is able to tune the angle between the polarization direction of these two lines up to 40° due to increased strain-induced HH-LH mixings up to ~55%. Compared to other quantum emitters, QDs can be easily integrated into optoelectronic devices, which enable, for example, the generation of non-classical light under electrical injection. A novel method to create sub-micrometer sized current-channels to efficiently feed charge carriers into single QDs is presented in this thesis. It is based on focused-laserbeam assisted thermal diffusion of manganese interstitial ions from the top GaMnAs layer into the underlying layer of resonant tunneling diode structures. The combination of the two methods investigated in this thesis may lead to new QDbased devices, where direct laser writing is employed to preselect QDs by creating localized current-channels and strain is used to fine tune their optical properties to match the demanding requirements imposed by QIP concepts.

Der erste Teil der Arbeit beschäftigt sich mit ultraschnellen Relaxationsprozessen in quasi-eindimensionalen organischen Molekülkristallen. Als Modellsystem wird das Perylenderivat MePTCDI untersucht. Mit verschiedenen Methoden der optischen Ultrakurzzeit-Spektroskopie werden Prozesse der Exzitonen- und Phononenrelaxation in der Zeit-Domäne untersucht. Die dafür aufgebauten Experimente erreichen eine Zeitauflösung von 20 Femtosekunden. Durch optische Anregung der niedrigsten elektronischen Übergänge werden in einem organischen Molekülkristall freie Exzitonen mit Wellenvektor k=0 gebildet. Dabei werden gleichzeitig zahlreiche intramolekulare und intermolekulare Schwingungsfreiheitsgrade angeregt. Die Anregung mit fs-Laserpulsen führt zum Aufbau kohärenter Schwingungswellenpakete. Es werden sowohl hochenergetische Oszillationen intramolekularer Vibrationen beobachtet, als auch erstmalig niedrigenergetische Oszillationen, die von Gittervibrationen (Phononen) stammen. Die kohärenten Vibrationen im elektronischen Grundzustand klingen bei Raumtemperatur im Bereich einiger Pikosekunden ab. Durch die optische Anregung mit fs-Laserpulsen wird nicht nur phononische Kohärenz, sondern auch elektronische Kohärenz der optischen Übergänge induziert. Die elektronische Kohärenz klingt mit der Dephasierungszeit T2 ab. Trotz der hohen Zeitauflösung war es letztendlich nicht möglich, die Dephasierung des niedrigsten exzitonischen Übergangs zeitlich aufzulösen - sie liegt jedoch im Bereich 17fs < T2 < 52fs. Die energetische Relaxation der freien Exzitonen zu den relaxierten, emittierenden Exzitonenzuständen erfolgt mit einer Zeitkonstante von ca. 50fs. Von diesen relaxierten Zuständen erfolgt die energetische Abregung in den elektronischen Grundzustand im ns-Bereich. Im zweiten Teil der Arbeit werden Untersuchungen an selbst-assemblierten Monoschichten (SAM) photochromer Moleküle vorgestellt. Als Modellsystem dienen Azobenzen-funktionalisierte Thiole auf Gold (111). Es konnten hochgeordnete Monoschichten dieser photochromen Moleküle erzielt werden, allerdings sind die bisherigen Schichten aufgrund der dichten Packung nicht photoaktivierbar. Mit Hilfe von Raster-Mikroskopie und Infrarot-Spektroskopie werden diese ultradünnen Schichten strukturell untersucht. Es wird ein kommensurates Wachstum mit zwei Molekülen in der nahezu rechteckigen Einheitszelle beobachtet, wobei die laubbaumförmigen Moleküle nahezu senkrecht auf der Oberfläche stehen. Als weitere Methode wurde die Generation der zweiten Harmonischen (Second Harmonic Generation, SHG) angewendet. Diese Technik eröffnet prinzipiell die Möglichkeit, photostimuliertes Schalten der Schicht zeitaufgelöst zu untersuchen. / The first part of this thesis is devoted to ultrafast relaxation processes in quasi-one-dimensional organic molecular crystals. Crystalline samples of the perylene derivative MePTCDI are employed as a model system. Processes concerning the excitonic and phononic relaxation are investigated in time domain using various experimental techniques of optical ultrafast spectroscopy. The experimental setups attain a time-resolution of 20 femtoseconds. Free excitons at wavevector k=0 are formed in a molecular crystal by optical excitation of the lowest electronic transitions. Thereby, various intramolecular and intermolecular vibrational degrees of freedom are excited simultaneously. The excitation by fs-laser pulses results in the composition of coherent vibrational wave packets. Both, higher-energetic oscillations caused by intramolecular vibrations (internal phonons) and, for the first time in a quasi-one-dimensional organic system, lower-energetic modulations which are related to coherent lattice phonons (external phonons) are observed. The coherence of both types of phonons in the electronic ground state is damped at room temperature within a few ps. Besides phononic coherence, optical excitation by fs-laser pulses additionally induces electronic coherence of the optical transitions. The electronic coherence decays with the dephasing time T2. In spite of the high time-resolution, finally it was not possible to time resolve the dephasing of the lowest excitonic transition - however, we can estimated it to be in the range of 17fs < T2 < 52fs. The energetic relaxation of free excitons to the relaxed, emitting exciton states takes place with a time constant of approx. 50fs. The subsequent energetic relaxation to the electronic ground state occurs on a ns-time scale. In the second part, investigations of self-assembled monolayers (SAM) of photochromic molecules are presented. Azobenzene-functionalized thiols on gold (111) are employed as a model system. Highly ordered monolayers of these photochromic molecules could be realized. However, these layers are not photoactive because of dense packing. By use of scanning tunneling microscopy and infra-red spectroscopy the structural properties of these ultrathin layers are investigated. A commensurate growth, yielding a lattice with two molecules within the nearly rectangular unit cell is observed. The molecules, shaped like a broad-leafed tree, are found to stand nearly upright on the surface. Second harmonic generation (SHG) is applied as another experimental method. This technique allows to time resolve photo-stimulated conformational changes of the layers in principle.

In dieser Dissertation werden ab initio Theorien zur Beschreibung der Zustände von perfekten halbleitenden und nichtleitenden Kristallen, unter Berücksichtigung elektronischer Korrelationen, abgeleitet und angewandt. Als Ausgangsbasis dient hierzu die Hartree-Fock Approximation in Verbindung mit Wannier-Orbitalen. Darauf aufbauend studiere ich zunächst in Teil I der Abhandlung den Grundzustand der wasserstoffbrückengebundenen Fluorwasserstoff und Chlorwasserstoff zick-zack Ketten und analysiere die langreichweitigen Korrelationsbeiträge. Dabei mache ich die Basissatzextrapolationstechniken, die für kleine Moleküle entwickelt wurden, zur Berechnung von hochgenauen Bindungsenergien von Kristallen nutzbar. In Teil II der Arbeit leite ich zunächst eine quantenfeldtheoretische ab initio Beschreibung von Elektroneneinfangzuständen und Lochzuständen in Kristallen her. Grundlage hierbei ist das etablierte algebraische diagrammatische Konstruktionsschema (ADC) zur Approximation der Selbstenergie für die Bestimmung der Vielteilchen-Green's-Funktion mittels der Dyson-Gleichung. Die volle Translationssymmetrie des Problems wird hierbei beachtet und die Lokalität elektronischer Korrelationen ausgenutzt. Das resultierende Schema wird Kristallorbital-ADC (CO-ADC) genannt. Ich berechne damit die Quasiteilchenbandstruktur einer Fluorwasserstoffkette und eines Lithiumfluoridkristalls. In beiden Fällen erhalte ich eine sehr gute Übereinstimmung zwischen meinen Resultaten und den Ergebnissen aus anderen Methoden. / In this dissertation, theories for the ab initio description of the states of perfect semiconducting and insulating crystals are derived and applied. Electron correlations are treated thoroughly based on the Hartree-Fock approximation formulated in terms of Wannier orbitals. In part I of the treatise, I study the ground state of hydrogen-bonded hydrogen fluoride and hydrogen chloride zig-zag chains. I analyse the long-range contributions of electron correlations. Thereby, I employ basis set extrapolation techniques, which have originally been developed for small molecules, to also obtain highly accurate binding energies of crystals. In part II of the thesis, I devise an ab initio description of the electron attachment and electron removal states of crystals using methods of quantum field theory. I harness the well-established algebraic diagrammatic construction scheme (ADC) to approximate the self-energy, used in conjunction with the Dyson equation, to determine the many-particle Green's function for crystals. Thereby, the translational symmetry of the problem and the locality of electron correlations are fully exploited. The resulting scheme is termed crystal orbital ADC (CO-ADC). It is applied to obtain the quasiparticle band structure of a hydrogen fluoride chain and a lithium fluoride crystal. In both cases, a very good agreement of my results to those determined with other methods is observed.

In dieser Dissertation werden ab initio Theorien zur Beschreibung der Zustände von perfekten halbleitenden und nichtleitenden Kristallen, unter Berücksichtigung elektronischer Korrelationen, abgeleitet und angewandt. Als Ausgangsbasis dient hierzu die Hartree-Fock Approximation in Verbindung mit Wannier-Orbitalen. Darauf aufbauend studiere ich zunächst in Teil I der Abhandlung den Grundzustand der wasserstoffbrückengebundenen Fluorwasserstoff und Chlorwasserstoff zick-zack Ketten und analysiere die langreichweitigen Korrelationsbeiträge. Dabei mache ich die Basissatzextrapolationstechniken, die für kleine Moleküle entwickelt wurden, zur Berechnung von hochgenauen Bindungsenergien von Kristallen nutzbar. In Teil II der Arbeit leite ich zunächst eine quantenfeldtheoretische ab initio Beschreibung von Elektroneneinfangzuständen und Lochzuständen in Kristallen her. Grundlage hierbei ist das etablierte algebraische diagrammatische Konstruktionsschema (ADC) zur Approximation der Selbstenergie für die Bestimmung der Vielteilchen-Green's-Funktion mittels der Dyson-Gleichung. Die volle Translationssymmetrie des Problems wird hierbei beachtet und die Lokalität elektronischer Korrelationen ausgenutzt. Das resultierende Schema wird Kristallorbital-ADC (CO-ADC) genannt. Ich berechne damit die Quasiteilchenbandstruktur einer Fluorwasserstoffkette und eines Lithiumfluoridkristalls. In beiden Fällen erhalte ich eine sehr gute Übereinstimmung zwischen meinen Resultaten und den Ergebnissen aus anderen Methoden. / In this dissertation, theories for the ab initio description of the states of perfect semiconducting and insulating crystals are derived and applied. Electron correlations are treated thoroughly based on the Hartree-Fock approximation formulated in terms of Wannier orbitals. In part I of the treatise, I study the ground state of hydrogen-bonded hydrogen fluoride and hydrogen chloride zig-zag chains. I analyse the long-range contributions of electron correlations. Thereby, I employ basis set extrapolation techniques, which have originally been developed for small molecules, to also obtain highly accurate binding energies of crystals. In part II of the thesis, I devise an ab initio description of the electron attachment and electron removal states of crystals using methods of quantum field theory. I harness the well-established algebraic diagrammatic construction scheme (ADC) to approximate the self-energy, used in conjunction with the Dyson equation, to determine the many-particle Green's function for crystals. Thereby, the translational symmetry of the problem and the locality of electron correlations are fully exploited. The resulting scheme is termed crystal orbital ADC (CO-ADC). It is applied to obtain the quasiparticle band structure of a hydrogen fluoride chain and a lithium fluoride crystal. In both cases, a very good agreement of my results to those determined with other methods is observed.

In der vorliegenden Arbeit wurde das Phasenverhalten von harten Hantelteilchen (Dumbbells) als Funktion des Aspektverhältnisses (L*, der Quotient aus dem Abstand der Massenzentren zum Durchmesser der Kugel) und der Volumendichte untersucht. Bragg-Reflexe weisen darauf hin, das harte Dumbbells mit L* < 0.4 einen Phasenübergang von einer Fluid-artigen Phase zu einem plastischen Kristall zeigen. Die experimentellen Phasendiagramme bei L* ~ 0.24 und L*~ 0.30 sind vergleichbar mit Vorhersagen aus Monte Carlo-Simulationen. Rheologie Messungen zeigen, dass harte Dumbbells verschiedene Gleichgewichts- und Nichtgleichgewichtsphasen annehmen. Suspensionen von harten Dumbbells im Zweiphasenbereich zeigen ein einziges Fließgrenzen-Ereignis, wohingegen in der plastischen Kristallphase zwei Fließgrenzen-Ereignisse beobachtet werden. Diese, im Folgenden als „double yielding“ bezeichneten Ereignisse, hängen mit der Kristallisation der Suspensionen von harten Dumbbells zusammen. Die entsprechende Strukturentwicklung wurde mit rheo-SANS-Experimenten untersucht und mithilfe von BD Simulationen interpretiert. Es konnte gezeigt werden, dass die plastische Kristallphase polykristallin im Ruhezustand ist. Unter schwacher Scherung wird eine fcc-Schwerzwilling Struktur ausgebildet. Bei hoher Scherung formt sich eine teilweise orientierte Struktur aus gleitenden Schichten. Zwischen diesen beiden Strukturen existiert eine ungeordnete Übergangsphase. Die Scher-induzierte Strukturausbildung eintspricht dem „double yielding“ Ereignis der kristallinen harten Dumbells. Es wurde gezeigt, dass ein größeres L* (L* < 0.4) die Strukturentwicklung unter Scherung qualitativ nicht beeinflusst. Aufgrund verlangsamter Dynamik in der Nähe des Glasübergangs sind lediglich stärkere oder längere Oszillationen von Nöten, um Scher-induzierte Kristallisation zu erzeugen. Im zweiten Teil dieser Arbeit werden Systeme aus hohlen Kugeln und „Janus“-Dumbbells vorgestellt, die als kolloidale Modellsysteme dienen können. / In the present work the phase behaviour of hard dumbbells has been explored as a function of aspect ratio (L*, the center to center distance to the diameter of one composed sphere) and volume fractions using thermosensitive dumbbell-shaped microgels as the hard dumbbell model system. A fluid-to-plastic crystal phase transition indicated by Bragg reflections has been observed for L* < 0.4. The experimental phase diagrams at L* ~ 0.24 and L* ~ 0.30 are comparable to the theoretical prediction of the Monte Carlo simulations. Rheological measurements reveal that the hard dumbbells in the biphasic gap show the yielding behaviour with a single yielding event, while two yielding events have been observed for the plastic crystalline phase. The two yielding events, referred to as the double yielding behaviour, are proved to be related to the crystallization of hard dumbbells. The underlying structural evolution has been investigated by rheo-SANS experiments and the scattering data has been interpreted by BD simulations. It is demonstrated that the plastic crystal structure of the hard dumbbells is polycrystalline at rest, which has been induced into the twinned fcc structure at low strain, the partially oriented sliding layers at high strain and the intermediate state at the strain in-between. The shear-induced structural evolution corresponds to the double yielding events of the fully crystallized hard dumbbells. Additionally, we prove that the increase of L* (L* < 0.4) does not change the structural evolution of the sheared hard dumbbells. Only more extensive or longer oscillations are required to form the shear-induced crystal structures due to the slowdown of the dynamics in the vicinity of the glass transition. In a second part, the work of this thesis is extended to hollow systems composed of hollow spheres and hollow Janus dumbbells that can be used as model systems to probe phase behaviour of hollow capsules.

Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.

We present a theoretical and experimental study on the lowest electronically excited states in quasi-one-dimensional molecular crystals. The specific calculations and the experiments are performed for the model compounds MePTCDI (N-N'-dimethylperylene-3,4:9,10-dicarboximide) and TCDA(3,4:9,10-perylenetetracarboxylic dianhydride). The intermolecular interactions between nearest neighbors are quantum chemically analyzed on the basis of semi-empirical (ZINDO/S) Hartree-Fock calculations and a singly excited configuration interaction scheme. Supermolecular dimer states are projected onto a basis set of localized excitations. The nature of the lowest states is then completely explained as a superposition of molecular and low lying charge-transfer excitations. The CT excitations show a significant intrinsic transition dipole, which is oriented approximately parallel to the molecular planes and has a large component along the molecular M-axis. The exciton states in the one-dimensional stacks are described by a model Hamiltonian that includes interactions between three vibronic levels of the lowest molecular excitation and nearest-neighbor CT excitations. The three-dimensional crystal structure is considered by Frenkel exciton transfer between arbitrary molecules. This model is compared to polarized absorption spectra. With a small set of parameters, we can describe the key features of the absorption spectra, the polarization behavior, and the Davydov splitting. The variation of the polarization ratio for the various exciton states is analyzed as a direct qualitative proof for the mixing between Frenkel and charge-transfer excitons.

This dissertation works out the vibrational properties of epitaxial silicene, which was discovered by Vogt et al. in 2012 by the epitaxial synthesis on the silver substrate. Its two-dimensional (2D) character is modified in comparison to the free-standing silicene due to its epitaxial nature, since the underlying substrate alters the physical properties of silicene as a result of the strong hybridization of the electronic levels of the substrate and adlayer. The growth of silicene layers is complicated by the sensitivity of the Si structures to the experimental conditions, mainly temperature, resulting in the formation of several seemingly different surface reconstructions. Another Si structure appears on the Ag surface at a supramonolayer coverage. The Raman spectroscopy was utilized to understand the relation between different Si structures and reveal their origin as well as to investigate the phonon-related physical properties of two-dimensional Si sheets. The central core of this work is the growth and characterization of these 2D silicene monolayers on the Ag (111) surface as well as the formation of silicene multilayer structures. The characterization of these materials was performed using in situ surface-sensitive measurement methods such as Raman spectroscopy and low-energy electron diffraction under ultra-high vacuum conditions due to high chemical reactivity of epitaxial silicene. Additional characterization was done ex situ by means of scanning force microscopy. The experimentally determined spectral signature of the prototypical epitaxial (3x3)/(4x4) silicene structure was confirmed by ab initio calculations, in collaboration with theory groups. The Raman signatures of the other 2D and 3D Si phases on Ag (111) were determined which allowed us to provide a clear picture of their formation depending on the preparation conditions. The monitoring of the silicene multi-layer growth yielded the vibrational signature of the top layer, reconstructed in a (√3x√3) fashion. It was compared to the inverse, (√3x√3)-Ag/Si(111), system showing the vast amount of similarities, which suggest that the (√3x√3) reconstruction belong to the silver layer. The chemical and physical properties of this surface structure additionally strengthen this equivalence. The possibility of functionalization of epitaxial silicene was demonstrated via exposure to the atomic hydrogen under UHV conditions. The adsorbed hydrogen covalently bonds to the silicene lattice modifying it and reducing its symmetry. As shown by Raman spectroscopy, such modification can be reversed by thermal desorption of hydrogen. The excitation-dependent Raman measurements also suggest the change of the electronic properties of epitaxial silicene upon hydrogenation suggesting that its originally semi-metallic character is modified into a semiconducting one. / Die experimentellen Forschungsarbeiten zum Thema Silicen basieren auf den 2012 von Vogt et al. durchgeführten Untersuchungen zu dessen Synthese auf Silbersubstraten. Diese Untersuchungen lieferten die Grundlage, auf der zweidimensionales (2D) epitaktisches Silicen sowie weitere 2D Materialien untersucht werden konnten. In den anfänglichen Arbeiten konnte dabei gezeigt werden, dass sich die Eigenschaften von epitaktischem Silicen gegenüber den theoretischen Vorhersagen von frei-stehendem Silicen unterscheiden. Darüber hinaus verkomplizieren sich die experimentellen Untersuchungen dieses 2D Materials, da auf dem Ag(111) Wachstumssubstrat sechs verschiedene 2D Si Polytypen existieren. Eine detaillierte Darstellung dieser Untersuchungen findet sich in dem einführenden Kapitel der vorliegen Promotionsschrift. Der zentrale Kern dieser Arbeit beschäftigt sich mit dem Wachstum und der Charakterisierung dieser 2D Silicen Monolagen auf Ag(111) Oberflächen sowie der Bildung von Silicen- Multilagen Strukturen. Die Charakterisierung dieser Materialien wurde in situ mit oberflächenempfindlichen Messmethoden wie der Raman Spektroskopie und der niederenergetischen Elektronenbeugung unter Ultrahochvakuum-Bedingungen durchgeführt. Eine zusätzliche Charakterisierung erfolgte ex situ mittels Raster-KraftMikroskopie. Die experimentell bestimmte spektrale Raman-Signatur der prototypischen epitaktischen (3x3)/(4x4) Silicene Struktur wurde durch ab initio Rechnungen, in Zusammenarbeit mit Theoriegruppen, bestätigt. Durch diesen Vergleich wir die zweidimensionale Natur der epitaktischen Silicen-Schichten vollständig bestätigt, wodurch andere mögliche Interpretationen ausgeschlossen werden können. Darüber hinaus wurden die Ramans-Signaturen der weiteren 2D und 3D Siliziumphasen auf Ag(111) bestimmt, wodurch sich ein klares Bild der Bildung dieser Strukturen in Abhängigkeit von den Präparationsbedingungen ergibt. Um die Möglichkeit der Funktionalisierung von Silicen und der weiteren 2D Si Strukturen zu testen, wurden diese unter UHV Bedingungen atomarem Wasserstoff ausgesetzt. Durch die Bindung zu den Wasserstoffamen wird die kristalline Struktur der Silicen-Schichten modifiziert und die Symmetrie reduziert, was sich deutlich in der spektralen Raman-Signatur zeigt. Wie mittels Raman Spektroskopie gezeigt werden konnte, kann diese Modifikation durch thermische Desorption des Wasserstoffs rückgängig gemacht werden, ist also reversibel. Raman Messungen mit verschiedenen Anregungswellenlängen deuten darüber hinaus auf die Änderung der elektronischen Eigenschaften der Silicen-Schichten durch die Hydrierung hin. Der ursprüngliche halbmetallische Charakter der epitaktischen Silicen-Schicht geht möglicherweise in einen halbleitenden Zustand über. Das Wachstum von Silicen Multilagen wurde ebenfalls mit in situ Ramanspektroskopie verfolgt. Die sich dabei ergebene Raman-Signatur wurde mit der Raman-Signatur von Ag terminiertem Si(111) verglichen. Hier zeigen sich große Ähnlichkeiten, die auf eine ähnliche atomare Struktur hindeuten und zeigen, dass Ag Atome für die Ausbildung der Oberflächenstruktur während des Wachstums der Si-Lagen verantwortlich sind. Die chemischen und physikalischen Eigenschaften dieser Struktur bestärken zusätzlich diese Äquivalenz.

As the third generation of luminescent materials, thermally activated delayed fluorescence (TADF)-type compounds have great potential as emitter molecules in OLEDs allowing for electro-fluorescence with 100 % internal quantum efficiency. For organic electronics, the general wide range of applications from OLEDs, bio-fluorescence imaging to sensor technologies and photonic energy storages roots on the enormous variety of organic materials. Especially in the field of metal- free aromatic designs, the range of possible materials showing diverse triplet harvesting effects is immense, making material development a highly complex task. Firstly, initial efforts in the understanding of the basic concepts behind TADF will be highlighted. A rational design strategy for TADF materials will be illustrated on an innovative material series based on phenylcarbazoles. A reasonable branch of isomers are theoretically constructed and slight stoichiometric modifications are performed to understand how molecular structure and intramolecular steric hindrance affects reverse intersystem crossing (RISC), while simultaneously revealing the strategy for deep blue TADF. The rational design of a bluish green TADF material called 5CzCF3Ph providing CIEy ≤ 0.4 is demonstrated, enabling peak EQE values of 12.1 % with a promising LT50 of 2 hrs at 500 cd∙m-2. Subsequently, the photophysics of five newly designed trimeric donor (D)-acceptor (A)-donor (D) type material compounds, analogue concepts to archetypical TADF designs, highlight the importance of intramolecular electronic couplings between adjacent triplet states for adiabatically-driven TADF, revealing the mechanism of local type triplet state perturbations on 3CT states. The most promising candidate (DMAC-PTO-DMAC) is disclosed and in turn optimized to meet required conditions for deep blue TADF emission. Ultimately, a deep blue luminescent material called isoDMAC-PTO is developed, featuring CIE coordinates of (0.16, 0.14) with an overall quantum yield of (86.4 ± 0.5) %. The focus switches to the fundamental understanding of the underlying mechanism giving rise to TADF in small molecules, leaving the scope of deep blue emission. While investigating the photophysical properties of a synthesized donor (D)-acceptor (A) type thermally activated delayed fluorescence (TADF) emitter named methyl 2-(9,9-dimethylacridin-10-yl)benzoate (DMAC-MB), it is possible to identify the excited state dynamics mediating the spin-flip process and hence the reutilization of non-radiative triplet states allowing for an internal quantum efficiency approaching unity. As experimentally observed by detailed temperature- and time-dependent transient photoluminescence (PL) measurements and consolidated by comprehensive quantum-chemical considerations, excited state configuration interaction by non-adiabatic couplings are anticipated as key property behind triplet up-conversion in the vicinity of conical intersections, contributing to recent research facing the exciton management within the auspicious field of TADF. For the first time, this thesis reports that even a TADF-silent molecule can be converted into efficient TADF systems by increasing the donor π- conjugation length through polymerization of the building block itself. With a total photoluminescence quantum yield up to 71 %, comprehensible research illustrates an efficient thermally activated delayed fluorescence polymer P1, based solely on non-TADF chromophores represented by a model compound 2 (PLQY of 3 % at RT). Finally, as predicted by TDDFT calculations and shown for the first time in the aspiring field of TADF, a thermally activated delayed fluorescence polymer based on a merely radiative, solely phosphorescent repeating unit is demonstrated. Intramolecular π-conjugation is exploited to trigger the charge-transfer excited state energy, revealing a general design tool to provoke TADF, reserved in particular for polymers. While the introduced twisted methyl 2-(9,9-dimethylacridin-10-yl) benzoate (DMAC-MB) reveals efficient thermally activated delayed fluorescence (TADF), a modified analogue 9,9-Dimethyl-5H,9H-quinolino[3,2,1-de]acridin-5-one (DMAC-ACR) shows emerging room temperature phosphorescence (RTP). As for TADF, intramolecular non-adiabatic couplings are unlocked as key feature actuating persistent RTP, linking photophysical analogies between TADF and RTP to structural self-similarities. Last but not least, degradation processes in TADF materials will be addressed. A correlation between theoretically calculated bond-dissociation energies (BDEs) and phenomenological observations reveals that low BDEs, in particular along pronounced charge-transfer bonds, ultimately lead to irreversible TADF material degradation induced by bi-molecular processes comprising TPQ as well as TTA. Finally, this thesis reveals the photophysics of 24 newly designed, synthesized and characterized TADF materials and demonstrates a fundamentally new approach for RTP, based on structural analogues to TADF. Far reaching design principles as conjugation induced TADF in polymers, as well as new design strategies selectively incorporating virbonic couplings yield device performances comprising LT50 of 2 hrs at 500 cd∙m-2 and targeted deep blue emission with CIE (0.16, 0.14). While lighting the way for TADF as future luminescent OLED materials, intrinsic material instabilities due to low bond-dissociation energies are disclosed as key-issues for tomorrows research.

Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.