The present research work mainly focuses on fabrication of compositionally modulated multilayers of (l−x) Pb(Mgi/3N2/3)O3 - x PbTiO3 (PMNPT) through multi target pulsed laser ablation technique. Heterostructures like compositionally varying multilayers; multilayers with graded interface and a ferroelectric [PbTiO3 (PT)] and relaxor (PMN) superlattices of different periodicities were fabricated. Role of artificially enhanced chemical heterogeneity and strain on enhancement of physical property was studied. Dimensional dependent ferroelectric and antiferroelectric type of polarization behavior was observed in the case of both compositionally varying multilayers and the superlattice structures fabricated. The dimensional dependence of various ferroelectric interactions like long-range, short-range and interfacial coupling among the layers was studied. The phase transition behavior and dielectric studies were carried out on these heterostructures. An artificial superlattice of a relaxor ferroelectric with a ferromagnetic layer was also fabricated for magnetoelectric applications. Chapter 1 provides a brief introduction to ferroelectric (FE) heterostructures, their technological applications and the fundamental physics involved in ferroelectric heterostructures. Initially an introduction to the technological importance and advantages of ferroelectric heterostructures is provided. A brief introduction to relaxor ferroelectrics and their characteristic structural features are discussed. A brief review of the ferroelectric heterostructures both from fundamental science and technological point of view is provided. Finally the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 addresses the problem of phase formation of PMNPT over platinum substrates and the role of the template over the phase formation, micro structural evolution and polarization behavior. The surface modifications of bare Pt under the processing conditions used to fabricate PMNPT was also studied. An intermediate roughening mechanism was observed. The role of LSCO over the micro structural evolution of PMNPT, the minimum thickness of LSCO required for phase formation of PMNPT, role of LSCO on phase formation and its effect on the polarization behavior of PMNPT of constant thickness are discussed. Chapter 4 deals with fabrication of different types of relaxor based heterostructures studied in this work. Three different types of PMNPT based heterostructures was fabricated using a multi target laser ablation chamber. The first type of heterostructure is a compositionally modulated multilayer thin film with four different compositions of (1-x) PMN - x PT (x = 0.0, 0.1, 0.2, 0.3 at.%) and is represented as PMNPT multilayer (ML) further in this thesis. PMNPT ML with different individual layer thickness was fabricated (30, 40, 60, 80, 100 and 120 nm). The second type of heterostructure is the PMNPT ML of same dimensions, but associated with a post deposition annealing to achieve a graded interface between the multilayers present and will be named as PMNPT graded or simply graded, further in this thesis. The third type of heterostructure is an artificial superlattice of a simple relaxor ferroelectric (PMN) and a normal ferroelectric (PT), which will be named as PMN-PT superlattice (SL) further in this thesis. The crystallinity, micro structural features and the nature of the interface present in the fabricated heterostructures were studied using various experimental techniques. Chapter 5 deals with the FE studies of compositionally modulated PMNPT ML thin films and PMNPT graded thin films. The ML with individual layer thickness of 120nm exhibited a clear FE behavior but with a reduced remnant polarization and reduced non linear behavior in capacitance - voltage (C-V) characteristics. But on varying the dimensions of the individual layers (30, 40, 60, 80, 100 and 120nm) a large dielectric tunability of around 74% was observed at lOOnm. The polarization behavior of these ML exhibited an interesting size dependent polarization behavior. A FE behavior was observed at low dimensions of 40 and 30nm. An AFE type of loop was observed at 60 and 80nm of individual layer thickness and at lOOnm it showed a clear paraelectric kind of behavior both in polarization hysteresis (P-E) and C-V studies. Graded films exhibited clear FE behavior at all dimensions fabricated and hence the role of interface in developing a critical polarization behavior in the case of ML was confirmed. Apart from the fundamental physics these ML and graded films permits the tunability of their physical properties on just varying the individual layer thickness. The dimensional dependence of dielectric tunability of ML and graded films were studied and it was found that in the case of a ML the dielectric tunability was high at lOOnm individual layer thickness and at 40nm in the case of a graded film. Thus the interfacial strain, interfacial coupling and chemical heterogeneity give an opportunity to engineer the physical property depending on the requirements. Chapter 6 deals with ferroelectric studies (P-E, C-V) of PMN-PT superlattice structures with different periodicities. The dimensional range in which, the interfacial coupling dominates the overall polarization behavior of the system was analyzed. A dimensional dependent FE and AFE behavior was observed in the PMN-PT SL structures. The dimensional dependent tunability of physical properties was achieved. The different interactions like short range, long range and the interfacial coupling and their dimensional dependent behavior was studied. The dimensional dependent tunability of the P-E and C-V behavior was observed both in symmetric and asymmetric SL structures. Chapter 7 deals with the relaxor behavior of the fabricated PMNPT ML, graded and PMN-PT SL structures. The dielectric phase transition of a PMNPT ML exhibited local maxima in the real part of dielectric constant with temperature. The local maxima correspond to the temperature regime at which, the individual layer dielectric maxima dominates the phase transition behavior of the ML structure. In the case of graded films an averaged behavior of all the compositions, with an enhanced diffusivity was observed. All the characteristic features of a relaxor ferroelectric were observed in the phase transition behavior of a graded thin film. The dielectric maxima exhibited a Vogel-Fulcher type of behavior with frequency, A similar averaged behavior was observed in the phase transition behavior of PMNPT ML at low dimensions (< 40 nm) of the individual layer. The dielectric phase transition behavior of PMN-PT SL structures of different periodicities was studied. No characteristic of a relaxor ferroelectric was observed for the periodicities in the range of 10 to 50 nm. At 60 nm periodicity the individual layer dominance was observed in the phase transition behavior of the SL structure. The phase transition behavior was found to be insensitive to the interfacial coupling in both the PMNPT ML and PMN-PT SL. Chapter 8 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the relaxor heterostructures. All the relaxor heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher's universal type of relaxation behavior. The anomalous dispersion common of a relaxor ferroelectric was observed in the imaginary dielectric constant at high frequencies. A.multi debye type of relaxation behavior was observed in the impedance analysis and the relaxation time was found to obey Vogel-Fulcher type of relation with temperature. The leakage current of all the heterostructures were found to be few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in all the heterostructures fabricated. Chapter 9 deals with an attempt of realizing the magnetoelectric effect in an artificial superlattice structure consisting ferromagnetic [Lao.6Sro.4Mn03 (LSMO)] and ferroelectric (PMNPT 70-30) layers. Both symmetric and asymmetric SL structures were fabricated and the asymmetric SL exhibited both room temperature ferromagnetic and ferroelectric behavior. A weak influence of magnetic field over the polarization behavior was observed. The magnetic behavior and its influence over electrical behavior were found to be dominated by the interface and were confirmed from the Maxwell-Wagner type of relaxation. Chapter 10 gives the summary and conclusions of the present study and also discusses about the future work that could give more insight into the understanding of the relaxor heterostructures.

Fabrication of artificially structured superlattices, when controlled on a nanoscale level, can exhibit enhanced dielectric properties over a wide temperature range. Possible fabrication of new functional devices based on the parametric values of dielectric constants of these heterostructures was the major motivation behind the work. Chapter 1 gives a brief overview of ferroelectrics; their defining features and their commercial importance to electronic industry. An introduction to ferroelectric superlattices, their technological application and fundamental physics that influence the behavior of superlattices are provided. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 involves fabrication of two-component ferroelectric superlattices consisting of Barium Titanate (BTO), and Strontium Titanate (STO) with nanoscale control of superlattice periodicities by high-pressure multi target pulsed laser deposition on Pt (111)/Ti/SiO2/Si (100) substrate. Superlattices with varying periodicities were fabricated and their compositional variation across the thin film and the interface width were studied using Secondary Ion Mass Spectrometry (SIMS). Fabrications of superlattice structure were supported by observation of satellite peaks in XRD corresponding to the coherent heterostructures. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. Chapter 4 deals with ferroelectric studies of BTO/STO superlattices. The size dependent polarization behaviors of the superlattices are shown. The experimental realization of the dimensional range in which, the long-range coupling interaction dominates the overall polarization behavior of the system was studied. The dependence of average spontaneous polarization on the individual layer thickness, temperature and the dimensional range of interaction are discussed. The enhanced non-linear behaviors of the films were measured in terms of tunability. The dielectric phase transition behavior of superlattice structures of different periodicities was studied. Chapter 5 focuses on fabrication of three-component ferroelectric superlattices consisting of Barium Titanate (BTO), Calcium Titanate (CTO) and Strontium Titanate (STO). The fabrications of superlattice structures were confirmed by the presence of satellite reflections in XRD analysis and a periodic concentration of Sr, Ba and Ca throughout the film in Depth profile of SIMS analysis. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. The dielectric characteristic and polarization properties of the system are discussed. Large variations of lattice distortion in the consisting layers were achieved by varying the stacking sequence and superlattice periodicity. The influence of interfacial strain on enhancement of ferroelectric polarization was studied. The size dependence and the role of interfaces in the observed enhancements of the dielectric behaviors were highlighted. The tunability of about 55% was achieved in these systems and was higher than any of the single polycrystalline thin film of the constituent materials reported till date. The enhanced dielectric properties were thus discussed in terms of the interfacial strain driven polar region due to high lattice mismatch and electrostatic coupling due to polarization mismatch between individual layers. Chapter 6 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the superlattice structures. All the heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher’s universal type of relaxation behavior. The anomalous dispersion was observed in the imaginary dielectric constant at high frequencies. A Debye type relaxation behavior was observed in the impedance analysis at low temperatures, whereas, a departure from ideal ‘Debye’ type was noticed as the temperature was increased. The leakage currents of all the heterostructures were found to be a few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in al the superlattice structures fabricated. Chapter 7 summarizes the present study and discusses about the future work that could give more insight into the understanding of the ferroelectric perovskite heterostructures.

This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.

Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

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Die vorliegende Arbeit präsentiert die ersten detaillierten Untersuchungen des Spin-Reorientierungs-Übergangs in epitaktischen NdCo5-Schichten. Die Proben, die mit gepulster Laserdeposition hergestellt wurden, konnten sowohl als in-plane- als auch als out-of-plane-texturierte Schichten präpariert werden. Für beide Wachstumsvarianten ergaben Röntgendiffraktometrie- und Texturmessungen eine sehr gute Texturierung mit einer nahezu einheitlichen Orientierung der c-Achse, die eine Untersuchung der magnetischen Eigenschaften entlang ausgewählter kristallografischer Richtungen ermöglichte. Die globalen Magnetisierungsmessungen der In-plane-Proben zeigten einen Spin-Reorientierungs-Übergang von einer magnetisch leichten c-Achse für Temperaturen oberhalb von 310 K über einen magnetisch leichten Kegel hin zu einer magnetisch leichten Ebene (a-Achse) unterhalb von 255 K. Die Übergangstemperaturen liegen damit geringfügig über den bisher an Massivproben gemessenen Werten. Aus den magnetischen Hysteresemessungen wurden die magnetokristallinen Anisotropiekonstanten erster und zweiter Ordnung für den Temperaturbereich der magnetisch leichten c-Achse und der magnetisch leichten Ebene ermittelt. Die Untersuchungen der Out-of-plane-Proben wiesen die Existenz einer magnetokristallinen Anisotropie höherer als zweiter Ordnung nach. Sie bewirkt ein unterschiedliches Schaltverhalten der parallel zur a- bzw. b-Achse gemessenen magnetischen Hysteresekurven im Temperaturregime der magnetisch leichten Ebene. Für die in-plane-texturierten Schichten wurde das Domänenmuster und dessen Änderung mit der Temperatur im gesamten Spin-Reorientierungs-Bereich analysiert. Diese Untersuchungen basieren auf in Kooperation mit der Universität Hamburg durchgeführten SEMPA-Messungen. Oberhalb von 318 K liegt eine Zweidomänenkonfiguration mit einer Ausrichtung der Magnetisierung parallel zur c-Achse vor, die beim Abkühlen in das Regime des magnetisch leichten Kegels in einen Vierdomänenzustand übergeht. Unterhalb von 252 K bildet sich eine Zweidomänenkonfiguration mit parallel zur a-Achse orientierter Magnetisierung. Diese lokalen Messungen bestätigten den Spin-Reorientierungs-Übergang mit zu den globalen Magnetisierungsmessungen vergleichbaren Übergangstemperaturen. Für charakteristisch orientierte Domänenwände erfolgten genauere Analysen der Magnetisierungsprozesse in den angrenzenden Domänen. Um ein erweitertes Verständnis der Domänenkonfiguration, deren Temperaturabhängigkeit und der vorhandenen Domänenwände zu erarbeiten, erfolgten mikromagnetische Simulationsrechnungen für ausgewählte Temperaturen. Die Berechnungen wurden sowohl für homogene Systeme als auch für Geometrien mit verschiedenen Pinningzentren durchgeführt. Die Analyse der Domänenwände ergab, dass ihr Bloch- oder Néel-Charakter und die Domänenwandweite von der Temperatur sowie ihrer Ausrichtung parallel zur c- oder a-Achse abhängt. / This thesis presents the first detailed investigation of the spin-reorientation-transition in epitaxial NdCo5 thin films. The samples were prepared by pulsed laser deposition as in-plane or out-of-plane textured films. For both kinds of samples X-ray diffraction and texture measurements revealed a high degree of texture with one common orientation of the c-axis within the film, which allowed an investigation of the magnetic properties along distinct crystallographic directions. Global magnetization measurements of the in-plane textured films showed a spin-reorientation from a magnetic easy axis (c-axis) at temperatures above 310 K via a magnetic easy cone to a magnetic easy plane (a-axis) at temperatures below 255 K. The transition temperatures are slightly higher than values reported for bulk samples. The magnetocrystalline anisotropy constants of first and second order were determined for the regime of the magnetic easy axis and plane. Measurements of the out-of-plane textured films verified the existence of a magnetocrystalline anisotropy of order larger than two, which becomes obvious from a different magnetic switching behavior along the a- and b-axis in the temperature regime of the magnetic easy plane. The domain structure and its changes with temperature were investigated for the in-plane textured films. There exists a two domain state at temperatures above 318 K with an orientation of the magnetization parallel to the c-axis from which a four domain state evolves when cooling down the sample to the easy cone state. Finally, a two domain state exists in the regime of the magnetic easy plane (easy a-axis) with an orientation of the magnetization parallel to the a-axis at temperatures below 252 K. The local measurements confirm the spin-reorientation-transition with transition temperatures comparable to those derived from global magnetization measurements. In addition, a detailed analysis of the magnetization processes for some characteristically oriented domain walls was performed. Micromagnetic simulations were carried out for selected temperatures to achieve a deeper understanding of the temperature dependence of the domain configuration and of the domain walls. The simulations considered homogeneous systems as well as systems with pinning centers. An analysis of the domain walls showed that their character and width depend on temperature and the orientation parallel to the a- or c-axis.

Time-resolved Faraday rotation (TRFR) is a pulsed laser pump/probe optical measurement used to characterize electron spin dynamics in semiconductor materials. A Mach-Zehnder type interferometer with orthogonally polarized arms is presented as a device for TRFR measurement that is superior to optical bridge detection, the traditional measuring technique, since Faraday rotation can be passively optically amplified via interference. Operation of the interferometer is analyzed under ideal conditions. Corrections to the ideal case stemming from imperfectly aligned optics, finite polarization extinction ratios, and an imperfect recombination optic are analyzed using a matrix transformation approach. The design of the interferometer is presented and chronicled. A description of the single-beam active control system utilized to stabilize the interferometer by continuous corrections to the optical path length of one arm with a piezoelectric actuator is given. Optical amplification by increasing the power in either arm of the interferometer is demonstrated and TRFR measurements taken with the interferometer at ambient temperatures are compared with measurements taken with the optical bridge. We find the interferometer to offer a detection limit on the order of 50 mrad at room temperature, which is five times more sensitive than the optical bridge. Isolation and stabilization of the interferometer were also successful in reducing signal noise to a level comparable with the optical bridge. Our results demonstrate that the interferometer is a better detection device for Faraday rotation under ambient conditions. In the immediate future, improvements to the control system should be made and experiments should be performed with high-quality samples at cryogenic temperatures to confirm that the interferometer performs as favorably under those conditions.