This diploma thesis describes the corrugated substrate integrated horn antenna designed to surface wave’s excitation in the UWB band groups 3, 4, 5 and 6 (6 – 10 GHz). The antenna is integrated into 3,4 mm thick textile with relative permittivity r = 1,195. The coaxial cable is connected via the SMA connector that is attached to the aluminum bracket. From the microstrip line transition the corrugated substrate integrated waveguide is excited. Two strip lines are placed in front of the aperture for improvement of the impedance matching. The directivity of the antenna is 12 dBi at 8 GHz. At the same frequency, the antenna efficiency is 70%.

Die vorliegende Arbeit stellt einen Beitrag zur kontinuierlichen Bestimmung von Massendurchfluss sowie Dichte für den Bereich der Mikroverfahrenstechnik dar. Verschiedene Messverfahren und Sensoren werden vorgestellt und diskutiert. Die fest eingespannte durchflossene Messröhre in resonanter Schwingung kann zum einen zur Dichtebestimmung genutzt werden, da die Dichte des Fluids die bewegte Masse des Sensors und daher dessen Eigenfrequenz beeinflusst. Beim Biegeschwinger erfährt das strömende Fluid zusätzlich eine Winkelgeschwindigkeit, die die Corioliskraft als Maß für die bewegte Masse zur Folge hat. Verschiedene konstruktive Varianten der resonanten Messröhre werden vorgestellt, dabei wird auf analytische Berechnungsverfahren ebenso eingegangen wie auf die Bestimmung der statischen und dynamischen Parameter mit rechnergestützter Simulation (Finite Elemente Methode). Ebenso wird der Einsatz von gekoppelten Mehrfachschwingern erörtert und es werden Schwingungsformen sowie Vor- und Nachteile des Doppelresonators erörtert. Im technologischen Teil wird die Herstellung mechanischer Resonatoren in Volumenmikromechanik vorgestellt. Dabei wird besonders auf das anisotrope Ätzen von einkristallinem Silizium in Kalilauge sowie auf das Silizium-Direktbonden eingegangen. Der Aufbau von Doppelresonatoren durch mehrfaches Bonden wird ebenfalls untersucht und die gefertigten Sensoren werden vorgestellt. Varianten der messtechnischen Auswertung resonanter Sensoren werden bezüglich des Nutzens für die Massendurchfluss- und Dichtemessung untersucht. Dabei werden besonders zwei entwickelte kapazitive Messverfahren näher vorgestellt, mit deren Hilfe die Sensorstrukturen untersucht werden. Es wird die Funktion der Dichtemessung mit einer Auflösung von 0,01 g/cm³ bei Flüssigkeiten und Gasen nachgewiesen und der Massenfluss bis 2 g/s bei einer Auflösung von 0,1 g/s. / This thesis represents a contribution to the continuous measurement of mass flow and density for the field of micro process engineering. Different measuring principles and sensors are introduced and discussed. The clamped fluid-filled measuring tube in resonant oscillation can be used on the one hand for density determination, since the density of the fluid influences the moving mass of the sensor and therefore its eigenfrequency. Inside an oscillating U-tube the fluid will additionally be exposed to an angular velocity, which leads to the Coriolis force as a quantity for the moving mass. Different design variants of the resonant measuring tube are presented. Analytical methods are introduced as well as techniques to determine the static and dynamic parameters by computer-aided simulation (finite element method). Furthermore the usage of coupled oscillators is discussed, possible modes of vibration are determined and the pros and cons of the double resonator are estimated. In the technological part the fabrication of mechanical resonators using bulk micromachining is presented. Special attention is drawn to anisotropic etching of monocrystal silicon in a potassium hydroxide solution as well as to silicon fusion bonding. The forming of double resonators by multiple wafer bonding is also examined and the manufactured sensors are shown. Methods of Variants of metrological evaluation of resonant sensors are examined concerning their usability for the mass flow and density measurement. Particularly two developed capacitive measuring techniques are discussed in detail and the sensor structures are examined with their help. The performance of the density measurement with a resolution down to 0,01 g/cm³ is proven with liquids and gases as well as the mass flow measurement up to 2 g/s with a resolution of 0,1 g/s.

This Thesis is devoted to the investigation of superfluid helium flows due to torsional oscillators. In its first part, flow due to a torsionally oscillating disc suspended on a tungsten filament is studied (building upon the work of A. C. Hollis Hallett from 1952). Measurements of the motion of the torsionally oscillating disc were performed in superfluid helium at temperatures between 1.265 K and 2.157 K at saturated vapour pressure. Time traces of the disc angular deflection were obtained, and critical parameters related to the turbulent flow stability were determined. In laminar flow, scaling of drag forces with the dimensionless Donnelly number was verified. Based on these results, and comparison with the original work, a scenario of the decay of turbulent flow was suggested. The second part of this work is focused on the development and construction of a similar experiment for mK temperatures. A new type of oscillator was designed, a so-called "pillbox", and a series of testing measurements was performed both at room and mK temperatures.

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.:List of Abbreviations and Symbols 1 Introduction and motivation 2 Theory 2.1 Electronic band structure of semiconductors 2.2 Light emitting diodes (LED) 2.2.1 History of LED 2.2.2 Mechanisms of light emission 2.2.3 Electrical properties of LED 2.2.4 LED e ciency 2.3 Si based light emitters 2.4 Microcavity enhanced light emitting pn-diode 2.4.1 Bragg reflectors 2.4.2 Fabry-Perot resonators 2.4.3 Optical mode density and emission enhancement in coplanar Fabry-Perot resonator 2.4.4 Design and optical properties of a Si microcavity LED 3 Preparation and characterisation methods 3.1 Preparation techniques 3.1.1 Thermal oxidation of silicon 3.1.2 Photolithography 3.1.3 Wet chemical cleaning and etching 3.1.4 Ion implantation 3.1.5 Plasma Enhanced Chemical Vapour Deposition (PECVD) of silicon nitride 3.1.6 Magnetron sputter deposition 3.2 Characterization techniques 3.2.1 Variable Angle Spectroscopic Ellipsometry (VASE) 3.2.2 Fourier Transform Infrared Spectroscopy (FTIR) 3.2.3 Microscopy 3.2.4 Electroluminescence and photoluminescence measurements 4 Experiments, results and discussion 4.1 Used substrates 4.1.1 Silicon substrates 4.1.2 Silicon-On-Insulator (SOI) substrates 4.2 Fabrication and characterization of distributed Bragg reflectors 4.2.1 Deposition and characterization of SiO2 4.2.2 Deposition of Si 4.2.3 Distributed Bragg Reflectors (DBR) 4.2.4 Conclusions 4.3 Design of Si pn-junction LED 4.4 Resonant microcavity LED with CoSi2 bottom mirror 4.4.1 Device preparation 4.4.2 Electrical Si diode characteristics 4.4.3 EL spectra 4.4.4 Conclusions 4.5 Si based microcavity LED with two DBRs 4.5.1 Test device 4.5.2 Device fabrication 4.5.3 LED on SOI versus MCLED 4.5.4 Conclusions 5 Summary and outlook 5.1 Summary 5.2 Outlook A Appendix A.1 The parametrization of optical constants A.1.1 Kramers-Kronig relations A.1.2 Forouhi-Bloomer dispersion formula A.1.3 Tauc-Lorentz dispersion formula A.1.4 Sellmeier dispersion formula A.2 Wafer holder List of publications Acknowledgements Declaration / Versicherung

Fabrication of hemispherical structures for application in hemispherical resonator gyro-scopes (HRG) is an integral part of modern sensing systems, especially in relation to space navigation. First, it is important for these structures to be as symmetric as possible in order to accurately track both in-plane and out-of-plane acceleration that occurs in fast moving satellites and space crafts. Next, they need to be larger for easier application in current mm scale systems and to maintain a lower noise floor and high quality factor. The work in this paper introduces a methodology for the analyzation of the micromachining process for larger symmetric hemispherical shell resonators (HSR). This is in order to increase their size while maintaining symmetry through isotropic etching using HNA and the pop-up ring mask design. The implementation of the pop-up ring mask allows for symmetric etching of<111> silicon and larger MEMS structures at a low cost while giving more design control to the user in comparison to alternative designs such as the pinhole. The investigation of how hemispheric structures are affected based on the adjustment of the pop-up ring design serves to both create larger symmetric HSRs and create a better model for future designs and applications. During this investigation, a range of design tests were done to create the hemispherical resonator molds in order to gauge the effectiveness of the pop-up ring changes. These results were then used to develop a method for achieving the desired larger symmetric HSRs.

<p>A specific class of small-scale plasmas (column diameters in a sub-mm to mm range) at rarefied pressures (under 10 Torr) enclosed in glass tubes hold significant interest currently in the scope  of  tunable  plasma  devices.  Specifically,  applications  of  these  plasmas  include  plasma antennas and plasma photonic crystals. Reliable diagnostics are necessary for the development and implementation of these technologies as conventional tools are inadequate in such small-scale plasmas.</p> <p>Coherent microwave scattering in the Thomson regime (TMS) was recently demonstrated for diagnostics of electron number density in miniature free-standing laser-induced plasmas in air under  10  Torr  with  plasma  column  diameters  <  0.5  mm.  However,  measurements  by  TMS diagnostics have never been applied for small-scale plasma objects enclosed within glass tubes. Additionally, TMS measurements were never independently confirmed with a previously verified experimental technique. This work aims to validate results of TMS measurements for small-scale plasma  objects  enclosed  within  glass  tubes  using  the  previously  established  and  well-known hairpin resonator probe. A DC discharge plasma column of fairly large diameter (about 1.5 cm) is used in the experiments to ensure reliable non-intrusive measurements by the hairpin resonator probe.</p> <p>The experiments were conducted in a DC discharge tube with a diameter of 1.5 cm and a length of 7 cm. TMS diagnostics yielded electron number densities of about 5.9×10¹⁰cm^-3, 2.8 ×10¹⁰cm^-3and  1.8 ×10¹⁰cm^-3at  pressures  of  0.2,  0.5  and  2.5  Torr,  respectively.  The corresponding  densities  measured  with  the  hairpin  resonator  probe  were  4.8×10¹⁰cm^-3,  3.8 ×10¹⁰cm^-3 and 2.6 ×10¹⁰cm^-3. Discrepancies between the two techniques were within 30% and can be attributed mainly to inaccuracies in the sheath thickness estimation required the hairpin resonator probe results.</p>

There is a huge demand for low-cost and compact laser devices in particular for point-of-care diagnostic, sensing, or optical communication. Organic solid-state lasers (OSLs) have a great potential to fill that gap due to their specific properties such as high optical gain, low lasing threshold, and spectral tunability. To miniaturize OSLs for micro-optical circuits two aspects are required: The spectrum of the laser should be easily tunable, and the pumping energy should be provided in a simple and compact method, in the best case electrically. In this work, we developed a simple, compact, easy to manufacture, and electrically tunable laser resonator using electroactive polymers. The cavity is formed between a highly reflecting distributed Bragg reflector (DBR) and a highly reflecting silver layer sandwiching a soft elastomer layer. A transparent electrode made by indium tin oxide is placed on the glass substrate below the DBR. If an external voltage between the transparent bottom electrode and the metal layer is applied, the elastomer layer is compressed by the electrostatic pressure, which leads to a blue shift of the optical modes of the microcavity. If an active material with a broad emission spectrum, such as organic molecules, is included inside the cavity layer, it enables the development of an electrically tunable OSL. Hence, we demonstrate a cost-effective approach towards an electrically tunable organic laser source particularly suitable for easily processable lab-on-chip devices. In the second part, a novel organic light emitting diode (OLED) architecture is realized enabling high current densities with low optical losses in the prospect of the realization of an electrically driven OSL. For this purpose, an additional highly conductive lateral transport layer (LTL) is introduced to achieve expansion of the charge recombination to the electrode-free area. Simulations by equivalent circuit approach allow for an analysis of the lateral distribution of the vertical current density to predict the lateral current density distribution in the high excitation regime (current densities ≈ 1 kA/cm² ). Moreover, the Joule heating of the device is reduced by restructuring the OLED layer stack. Thus, high current densities close to the predicted lasing threshold of 1 kA/cm² could be achieved. The results of the thesis presenting a significant step towards the development of an electrical pumped OSL.:1 Introduction 2 Theoretical Background 2.1 Optical Cavities 2.1.1 Fabry-Perot Resonator 2.1.2 Transfer Matrix Algorithm 2.1.3 Distributed Bragg Reflector 2.1.4 Optical Microcavities 2.1.5 Tunable Optical Cavities 2.2 Organic Semiconductors 2.2.1 Properties 2.2.2 Electronic Structure 2.2.3 Absorption and Emission Spectra 2.2.4 Electrical Current 2.2.5 Doping 2.3 Organic Light Emitting Diodes 2.3.1 Basic OLED 2.3.2 Pin-OLED 2.3.3 OLEDs at High Excitation 2.4 Organic Lasers 2.4.1 Fundamentals of a Laser 2.4.2 Organic Molecules as Active Medium 2.4.3 Electrical Pumping of Organic Lasers 2.5 Dielectric Elastomer Actuators 2.5.1 Principle of Operation 2.5.2 Silicone-Based Materials 2.5.3 Compliant Electrodes 3 Experimental Methods 3.1 Sample Fabrication 3.1.1 Dielectric Elastomer Actuators 3.1.2 Organic Light Emitting Diodes 3.2 Characterization Techniques 3.2.1 Optical Characterization 3.2.2 Electrical Characterization 4 Tunable Optical Cavities with Dielectric Elastomer Actuators 4.1 Design of the Tunable Optical Microcavity 4.1.1 Tunable Cavity with Thin Metal Electrode . 4.1.2 Compliant Metal Electrodes on Dielectric Elastomer Films 4.1.3 Actuator Performance of Thick Metal Electrode 4.1.4 Electro-mechanical Characteristic 4.2 Tunable Emission of Optical Elastomer Cavities 4.2.1 Incorporation of Organic Laser Dyes in the Elastomer 4.2.2 Tunable Photoluminescence Spectra 4.2.3 Lasing in Elastomer Cavities 5 Novel Architecture for OLEDs at High Excitation 5.1 OLEDs at High Excitations Using Emission from Metal-free Area 5.1.1 Simulation of the Lateral Distribution of the Vertical Current Density 5.1.2 Investigation of the Lateral Emission 5.1.3 Organic Zener Junction 5.1.4 Simulation of High Excitation Behavior 5.2 Reduction of Self-heating for OLEDs at High Excitation 5.2.1 Crossbar-OLED at High Current Densities 5.2.2 Change in Layer Structure 5.3 Fully Transparent Metal-free OLEDs 5.3.1 Highly doped C 60 as a Transparent Electrode 5.3.2 Investigation of the External Quantum Efficiency 6 Conclusion and Outlook / Insbesondere durch die wachsende Nachfrage in Point-of-Care-Diagnostik, Sensorik oder optischer Kommunikationstechnologie wird eine große Anzahl von günstigen und kompakten Laserbauteilen benötigt. Aufgrund ihrer spezifischen Eigenschaften, wie hoher optische Verstärkung, niedriger Laserschwelle und spektrale Durchstimmbarkeit, sind organische Festkörperlaser geeignete Kandidaten, um diese Lücke zu schließen. Für die Anwendung als mikrooptische Systeme werden zwei wesentliche Komponenten benötigt: Die spektrale Durchstimmbarkeit sowie das Pumpen des Lasers sollten mit einem einfachen und kompakten Verfahren realisiert werden, im besten Fall durch Anlegen einer elektrischen Spannung. In der vorliegenden Arbeit wurde ein kompakter, elektrisch durchstimmbarer Laserresonator entwickelt, welcher mittels eines dielektrischen Elastomeraktuators in wenigen Prozessschritten realisiert werden kann. Der Resonator besteht aus zwei hochreflektierenden Spiegeln, einem dielektrischen Bragg-Spiegels und einem Metallspiegel, die eine Resonatorschicht aus einem weichen, verformbaren Elastomer umschließen. Für die elektrische Aktuation wird eine Spannung zwischen einer transparenten Bodenelektrode aus Indiumzinnoxid unterhalb des Bragg-Spiegel und der Metallschicht angelegt. Durch die elektrostatische Anziehung beider Elektroden wird die Elastomerschicht zusammengedrückt, wodurch die optischen Moden des Resonators eine Blauverschiebung der Wellenlänge erfahren. Durch die Integration einens Fluoreszenzfarbstoffes mit einem breiten Emissionsspektrum innerhalb der Resonatorschicht, wird die Umsetzung eines elektrisch durchstimmbaren, organischen Festkörperlasers ermöglicht. Im zweiten Teil der Arbeit wird ein neuartiges Design für organische Leuchtdioden (OLED) vorgestellt, um diese bei hohen Stromdichten zu betreiben und gleichzeitig die optischen Verluste, die beim Einbau in einen optischen Mikroresonator auftreten, zu minimieren. Hierfür wird eine zusätzliche hoch leitfähige, organische Schicht, die laterale Transportschicht, in den Schichtaufbau der OLED integriert. Aufgrund des verstärkten lateralen Ladungsträgertransports wird die Rekombinationszone bis außerhalb der Elektroden bedeckten Fläche ausgeweitet. Mithilfe einer Simulation, welche die organischen Schichten mittels eines Ersatzschaltbildes beschreibt, war es möglich, die laterale Verteilung der vertikalen Stromdichte zu bestimmen und damit Vorhersagen über die Stromdichtenverteilung bei hohen Anregungen (≈ 1 kA/cm² ) zu treffen. Darüber hinaus ermöglicht eine geänderte Schichtreihenfolge der OLED, die Joulesche Erwärmung des Bauteils zu reduzieren. Dadurch ist es möglich, hohe Stromdichten überhalb der vorherge sagten Laserschwelle von 1 kA/cm² zu erreichen. Diese Ergebnisse stellen eine wichtige Voraussetzung für die Entwicklung eines elektrisch gepumpten, organischen Festkörperlasers dar.:1 Introduction 2 Theoretical Background 2.1 Optical Cavities 2.1.1 Fabry-Perot Resonator 2.1.2 Transfer Matrix Algorithm 2.1.3 Distributed Bragg Reflector 2.1.4 Optical Microcavities 2.1.5 Tunable Optical Cavities 2.2 Organic Semiconductors 2.2.1 Properties 2.2.2 Electronic Structure 2.2.3 Absorption and Emission Spectra 2.2.4 Electrical Current 2.2.5 Doping 2.3 Organic Light Emitting Diodes 2.3.1 Basic OLED 2.3.2 Pin-OLED 2.3.3 OLEDs at High Excitation 2.4 Organic Lasers 2.4.1 Fundamentals of a Laser 2.4.2 Organic Molecules as Active Medium 2.4.3 Electrical Pumping of Organic Lasers 2.5 Dielectric Elastomer Actuators 2.5.1 Principle of Operation 2.5.2 Silicone-Based Materials 2.5.3 Compliant Electrodes 3 Experimental Methods 3.1 Sample Fabrication 3.1.1 Dielectric Elastomer Actuators 3.1.2 Organic Light Emitting Diodes 3.2 Characterization Techniques 3.2.1 Optical Characterization 3.2.2 Electrical Characterization 4 Tunable Optical Cavities with Dielectric Elastomer Actuators 4.1 Design of the Tunable Optical Microcavity 4.1.1 Tunable Cavity with Thin Metal Electrode . 4.1.2 Compliant Metal Electrodes on Dielectric Elastomer Films 4.1.3 Actuator Performance of Thick Metal Electrode 4.1.4 Electro-mechanical Characteristic 4.2 Tunable Emission of Optical Elastomer Cavities 4.2.1 Incorporation of Organic Laser Dyes in the Elastomer 4.2.2 Tunable Photoluminescence Spectra 4.2.3 Lasing in Elastomer Cavities 5 Novel Architecture for OLEDs at High Excitation 5.1 OLEDs at High Excitations Using Emission from Metal-free Area 5.1.1 Simulation of the Lateral Distribution of the Vertical Current Density 5.1.2 Investigation of the Lateral Emission 5.1.3 Organic Zener Junction 5.1.4 Simulation of High Excitation Behavior 5.2 Reduction of Self-heating for OLEDs at High Excitation 5.2.1 Crossbar-OLED at High Current Densities 5.2.2 Change in Layer Structure 5.3 Fully Transparent Metal-free OLEDs 5.3.1 Highly doped C 60 as a Transparent Electrode 5.3.2 Investigation of the External Quantum Efficiency 6 Conclusion and Outlook

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第20377号 / 工博第4314号 / 新制||工||1668(附属図書館) / 京都大学大学院工学研究科電気工学専攻 / (主査)教授 篠原 真毅, 教授 和田 修己, 教授 大村 善治 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

<p>The ferrimagnetic electrical insulator yttrium iron garnet (YIG) has been proved a promising magnonic platform that allows for a variety of application within microwave fre- quency range. This dissertation focuses on the development of novel spin wave resonators and filters for next-generation radio frequency technology.</p> <p>Chapter 1 begins with an introduction to modern radio frequency communication tech- nology and motivation of our research on novel radio frequency devices.</p> <p>Chapter 2 discusses about the properties of yttrium iron garnet (YIG) thin film platform and theory of magnetostatic waves (MSW) within the magnetic thin film system. Three different types of magnetostatic wave modes, known as magnetostatic forward volume wave (MSFVW), magnetostatic backward volume waves (MSBVW) and magnetostatic surface wave (MSSW), are illustrated in this section. They have very distinct dispersion relations and require different transduction technology, which leads to disparate designs for devices utilizing different modes. The damping mechanism and linewidth of the magnetostatic modes will also be discussed in this chapter.</p> <p>Chapter 3 will showcase a new YIG-on-Si platform created using novel YIG bonding technology and the first ever on-chip MSFVW hairpin resonator on the YIG-on-Si platform. In the first part, we would like to show finite element analysis of YIG-on-Si MSFVW hairpin resonator and prove the capability of the hairpin transducer incorporated with YIG thin film to yield lower self-inductance and stronger excitation field. These unique properties are beneficial for generating high coupling between magnon and microwave domains. In the following sections, the bonding technology essential for creation of YIG-on-Si platform and key fabrication technology of hairpin devices are explained in detailed. With well defined fabrication process established, we will demonstrate that the hairpin magnetostatic wave resonator obtained through the process is magnetically tunable with a high coupling efficiency over 50%. An out-of-plane Z-directional tunable magnetic field results in forward volume spin-wave resonance with frequency in the 5G band. This technology enables us to build on-chip devices of desirable high coupling and magnetic tuning on the new YIG-on-Insulator platform and provides possibility of magnetic tuning and band-pass filter at radio-frequency range.</p> <p>Chapter 4 demonstrates a planar monolithic yttrium iron garnet (YIG) Chebyshev bandstop filter on traditional gadolinium gallium garnet (GGG) substrate with tunable frequency, low insertion loss and high rejection. This filter is created in YIG micro-machining technol- ogy that allows direct placement of metal transducers on YIG for strong spin-wave coupling. With an out-of-plane 3900 Oe bias field, the bandstop filter exhibits 55 dB maximum stop- band rejection at a center frequency of 6 GHz, with 2 dB passband insertion loss and 37.8 dBm passband <strong>IIP3</strong>. By applying different bias fields, the stopband center frequency is tuned from 4 GHz to 8 GHz while maintaining more than 30 dB rejection. Incorporated with proper design of tunable compact electromagnet, this new filter design can provide attenuation of spurs appearing across the 5G and X-band spectrum.</p> <p>In chapter 5, we will explore the properties of YIG thin-film materials in depth. Both YIG-on-Si and YIG-on-GGG platform under different conditions will be examined. Results of X-ray diffraction (XRD), ferromagnetic resonance (FMR), scanning tunneling microscope (STM) on the YIG thin films will be presented. Those results will cast light onto the study of limiting factors of our YIG-on-Si and YIG-on-GGG devices.</p>

K-Band (18 to 26 GHz) dielectric resonator oscillators are typically used as a local oscillator in most K-Band digital transmitter/receiver topologies. Traditionally, the oscillator itself is made up of an active device, a dielectric resonator termination network, and a passive load matching network. The termination network embodies a cylindrical high permittivity dielectric resonator that is coupled on the same plane as a current carrying transmission line. This configuration provides an adequate resonance needed for oscillation but has some limitations. In order to provide a high Q resonance the entire oscillator is placed in a metal box to prevent radiation losses. This increases the overall size of the device and makes it difficult to integrate in smaller transceiver topologies. Secondly, a tuning screw is required to help excite the dominant mode of the resonator to achieve the high Q response. This can cause problems in precision due to the mechanical jitter of the screw inherent in mobile devices. By embedding this resonator inside the substrate it is possible to realize a very high Q resonance at a desired frequency and remove the need for a metal cavity and tuning screw. An additional advantage can be seen in terms of overall size reduction of the oscillator circuit. To demonstrate the feasibility of utilizing a dielectric resonator embedded within a substrate, a K-Band oscillator proof of concept has been designed, fabricated, and tested. The oscillator is comprised of a low noise active transistor device, an embedded k-band dielectric resonator and a passive transmission line load network. All elements within the oscillator are optimized to produce a steady oscillation near 20 GHz. Preliminary investigations of a microstrip resonator S-band (2-3 GHz) oscillator are first discussed. Secondly, various challenges in design and fabrication are discussed. Thereafter, simulated and measured results of the embedded DRO structure are presented. Emphasis is placed on output oscillation power and low phase noise. With further development, the entire oscillator can be embedded within the substrate leaving only the active device on the surface. This allows for a considerable reduction in material cost and simple integration with miniaturized digital transmitter/receiver devices.