Thin Film CdS/CdTe Solar cells have been an attrative alternative to silicon solar cells because of their low cost. Numerical Modeliong using using various tools pertinent only to solar cells have been employed to study the device properties. In this work a powerful device simulation tool MEDICI is used to develop a quantitative device model. The model is modified to accommodate a glass layer and an AM1.5 spectrum is used as the simlation of light source. Analysis of the response of solar cell J-V parameters like voc and Jsc to changes in acceptor concentration, CdTe thickness and changes in the work function of the back contact under intrinsic conditions were done. Trap levels were then added in the midgap regionof the device and the earlier variations were comprehensively studied to establish the trap parameters. Further this model was extended to perform the C-V analysis of the device. Finally two cases were analysed having their energy band profile as the baseline to fix their corresponding J-V responses. The anamolous behaviour of the J-V curves namely the rollover and crossover effects were noted in detail.

This study presents a new way for new 3D energy harvesting energy with vertically aligned nanorods arrays. ZnO nanoparticles array on Au/Cr/Si substrate are directly patterned by electrospray. First, gel solutions with zinc acetate, monoethanolamine and 2-methoxyethanol as the precursor by sol-gel technology were formulated. Then, the solutions were stirred to become clear and homogeneous liquid. Second, the precursor solutions were prepared by electrospray, where a Taylor cone was formed to produce ZnO nanoparticles. Then the ZnO nanoparticles were annealed as seed layers for nanorods. By varying the property of the ZnO solution, needle with collector distance, applied voltage, annealing temperature and molar ratio were discussed. After annealing, the orientation of the ZnO nanorods depend on the crystalline orientation of ZnO nanoparticles. The ZnO nanorods were obtained at a temperature of 90 ¢XC by aqueous solution method. The experimental parameters of lengths, diameters, and pH level of the reaction medium of the Zno nanorod were observed and controlled. The physical structures of ZnO were characterized by X-ray diffraction (XRD) and Field Emission Scanning Electron Microscopy (FESEM) analyses. The results show that the ZnO nanoparticles become more intensity with increasing in annealing temperature. The SEM analysis reveals that the ZnO nanorods have diameters about 100-400 nm and length about 200-1200 nm. Finally, Pt electrode atop as Schottky contacts were packed to fabricate nanogenerator with ZnO nanorods. Then the nanogenerator was driven by ultrasonic wave vibration. The wave drives the electrode up and down to vibrate the nanorods, and its voltage and current were also characterized. The measurement results show the maximum power is 0.004х10-8 W during the operation frequency of 42 kHz.

Multi walled carbon nanotubes (MWCNT) grown in highly ordered porous alumina templates were incorporated into a resistive gas sensor design and were evaluated for their sensitivities. The material characteristics and electrical properties of the nanotubes were analyzed. A study was undertaken to elucidate the effect of UV light on desorption characteristics and the dependence of sensitivity on (i) thickness of amorphous carbon layers and (ii) flow rates of analyte gases. These sensors were highly responsive to both oxidizing and reducing gases with steady state sensitivities of 5% and 10% for 100ppm of NH3 and NO2 respectively, at room temperature. As part of a comparative study, thick films of MWCNTs grown on Si/SiO2 substrates were integrated into various nano-composite based sensors and were evaluated for their response. Steady state sensitivities as high as 10% and 11% were achieved for 100ppm of NH3 and NO2 respectively, at room temperature. MWCNTs were characterized for their electrical properties by I–V measurements at room temperatures. A typical I-V curve with an ohmic behavior was observed for a device with high work function metals (example: Au, Pt); Schottky behavior was observed for devices with metal contacts having low work functions (example: Al, Cu).

Over the past few years, surface plasmon photodetectors have been of renewed interest. This is due to their unique double functionality of combining an SPP waveguide structure with a photodetection structure. This thesis investigates the performance of a Schottky nano-photodetector integrated into a finite width metal stripe which is covered by air on top and supported by silicon at the bottom, supporting the propagation of bound SPP modes. Properties of surface plasmons, including the sub-wavelength confinement, were exploited to increase the efficiency of the detector. The detector performance was explored via applying end-fire coupling to the fundamental supported mode, then the results were used to calculate the devices responsivity, dark current, minimum detectable power, and photocurrent for various metal lengths. End fire coupling to a Schottky mode supported by a nano-structured metal was done for what is believed to be the first time.

The study of defects in semiconductors has been on-going for over 50 years. During this time, researchers have been studying the origins and identity of process induced defects, a task which has proved to be very demanding. While defects in silicon, the most widely used semiconductor, have been widely studied, there is more literature on n-type silicon than on p-type silicon. Compared to n-type silicon, p-type silicon is challenging to work with when it comes to making good Schottky diodes. A good rectifying device is essential for the performing of electrical characterisation techniques such as deep-level transient spectroscopy. In spite of this challenge p-silicon cannot be ignored. Many of the electronic devices are a combination of both n- and p-silicon therefore the need to understand the electronic properties of both materials. In this thesis, defects introduced in p-Si by electron beam deposition (EBD) were investigated. In order to understand these defects better, defects introduced by conditions of electron beam deposition (EBD) without metal deposition, were investigated. This process will be referred to as electron beam exposure (EBE). Finally, the defects were compared to defects induced by alpha-particle irradiation. EBD defects, introduced during electron beam deposition (EBD) of titanium (Ti) contacts on p-Si were investigated. The Schottky contacts were annealed within a temperature range of 200–400 oC. Current-voltage (I-V) measurements were conducted to monitor the change in electrical characteristics with every annealing step. Deep-level transient spectroscopy (DLTS) and Laplace-DLTS techniques were employed to identify the defects introduced after EBD and isochronal annealing of the Ti Schottky contacts. DLTS revealed that the main defects introduced during metallisation were hole traps with activation energy of 0.05 eV, 0.23 eV and 0.38 eV. Depth profiles of these defects showed that the formed close to the interface within a depth of 0.4 μm. Defects induced by EBE were studied by exposing samples for 50 minutes after which nickel (Ni) Schottky contacts were fabricated using resistive deposition. Only one defect with an activation energy of 0.55 eV was observed. This activation energy is similar to that of the I-defect. DLTS depth profiling revealed that the defect could be detected up to a depth of 0.8μm below the junction, which is significantly deeper than EBD defects. Defects induced when p-Si was irradiated by alpha particles from a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7×106 cm−2 s−1 at room temperature were investigated. After exposure at a fluence of 5.1×1010 cm−2, hole traps with the following activation energies were observed: 0.10 eV, identified as a tri-vacancy related defect, 0.33 eV, the interstitial carbon (Ci), 0.52 eV, a B-related defect and 0.16 eV. Low temperature irradiation experiments were also carried out using alpha- particles with the same fluence rate. Measurements were taken between 35 K and 120 K. The defect levels were at 0.10 eV, 0.14 eV and 0.18 eV. These levels were attributed to the boron-substitutional vacancy complex, the mono-vacancy and a vacancy-related defect, respectively. We conclude that EBD and EBE induced more complex defects than those induced by alpha-particle irradiation. / Thesis (PhD)--University of Pretoria, 2019. / Physics / PhD / Unrestricted

This research investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the application of the electron injection effect in optoelectronic devices was investigated. The impact of electron injection on the minority carrier diffusion length was studied at various temperatures in Mg-doped p-GaN, p-Al[subscript x]Ga[subscript 1-x]N, and p-Al[subscript x]Ga[subscript 1-x] N/GaN superlattices. It was found that Lsubscript n] experienced a multi-fold linear increase and that the rate of change of L[subscript n] decreased exponentially with increasing temperature. The effect was attributed to a temperature-activated release of the electrons, which were trapped by the Mg levels. The activation energies, E[subscript a], for the electron injection effect in the Mg-doped (Al)GaN samples were found to range from 178 to 267 meV, which is close to the thermal ionization energy of the Mg acceptor. The E[subscript a] observed for Al[subscript 0.15]Ga[subscript 0.85]N and Al[subscript 0.2]Ga[subscript 0.8]N was consistent with the deepening of the Mg acceptor level due to the incorporation of Al into the GaN lattice. The E[subscript a] in the homogeneously doped Al[subscript 0.2]Ga[subscript 0.8]N/GaN superlattice indicates that the main contribution to the electron injection effect comes from the capture of injected electrons by the wells (GaN). The electron injection effect was successfully applied to GaN doped with an impurity (Mn) other than Mg. Electron injection into Mn-doped GaN resulted in a multi-fold increase of the L[subscript n] and a pronounced decrease in the band-to-band cathodoluminescence intensity. The E[subscript a] due to the electron injection effect was estimated from temperature-dependent cathodoluminescence measurements to be 360 meV. The decrease in the band-to-band cathodoluminescence is consistent with an increase in L[subscript n] and these results are attributed to an increase in the minority carrier lifetime due to the trapping of injected electrons by the Mn levels. A forward bias was applied to inject electrons into commercially built p-i-n and Schottky barrier photodetectors. Up to an order of magnitude increase in the peak (360 nm) responsivity was observed. The enhanced photoresponse lasted for over four weeks and was attributed to an electron injection-induced increase of L[subscript n] and the lifetime.

No description available.

Ce travail de thèse est consacré à la conception et à la fabrication de diodes JBS en carbure de silicium. Une première partie de ce travail a consisté à concevoir par simulation une protection périphérique de la diode la plus efficace possible en réduisant sa sensibilité à la technologie (charges dans l’oxyde et activation des dopants). L’impact de la géométrie de l’anode de la diode JBS sur le champ électrique maximum sous le contact Schottky en inverse et la résistance série de la diode à l’état passant a été étudié. Une nouvelle architecture de diode JBS, à base de tranchées implantées, a été proposée pour pallier les limitations liées aux faibles profondeurs d’implantation d’Al. Une deuxième partie de ce travail a concerné le développement de briques technologiques, indispensables à la fabrication de la diode JBS, tels que les contacts métalliques et la gravure. Enfin, la fabrication complète et la caractérisation électrique de diodes ont été réalisées afin de valider les éléments de conception et l’intégration des briques technologiques développées durant cette thèse. / This study was dedicated to the design and to the fabrication of SiC JBS diodes. The first part of this work includes the design of robust efficient edge termination of the diode with special care to its technology sensitivity. The impact of anode layout of JBS diode on the maximum electric field under Schottky contact and on the on-state resistance has been investigated. A new structure of JBS diode, trenched and implanted, has been proposed to overcome the low Al implantation depth. A second part of this work has been focused on the development of technological steps required for the fabrication of JBS diodes such as metal contact and SiC etching. Finally, full fabrication and electrical characterization of diodes have been carried out in order to validate the design and the integration of technological steps developed during this thesis work.

Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode recuite à 400 °C avec 30 nm de profondeur de gravure a montré une hauteur de barrière de 0,82 eV et un facteur d'idéalité de 1,49. La diode a présenté une très faible densité de courant de fuite de 8.45x10-8 A.mm-1 à -400 V avec une tension de claquage entre 480 V et 750 V. / Si-based devices for power conversion applications are reaching their limits. Wide band gap GaN is particularly interesting due to the high electron saturation velocity and high breakdown electric field, especially when epitaxied on low cost substrates such as Si. This work was dedicated to the development and fabrication of the Schottky diode on AlGaN/GaN on Si. SiNx passivation in very low tensile strain is used. Ti (70 nm)/Al (180 nm) partially recessed ohmic contacts annealed at 800 ºC exhibited a 2.8 Ω.mm Rc with a sheet resistance of 480 Ω/sq. Schottky diodes with the previously cited passivation and ohmic contact were fabricated with a fully recessed Schottky contact annealed at 400 ºC. A Schottky barrier height of 0.82 eV and an ideality factor of 1.49 were obtained. These diodes also exhibited a very low leakage current density (up to -400 V) of 8.45x10-8 A.mm-1. The breakdown voltage varied between 480 V and 750 V.

Study of electric field in radiation detectors by Pockels effect (Master Thesis) by Michael Hakl Abstract Cadmium Telluride (CdTe) is a convenient candidate for room tem- perature detection of X-ray and gama radiation due to 1.5 eV band- gap energy and high atomic mass. Since CdTe has the highest linear electro-optical coefficient among II-VI compounds, the detector rep- resents a Pockels cell. Transmittance of the crystal is modulated by the internal electric field. Processing of infrared camera photographs results in an electric field profile between biasing electrodes. The elec- tric field in semi-insulting CdTe is influenced with deep level traps causing charge polarization under the electrodes. Occupation of traps is dependent on metal-semiconductor interface. Relation of charge accumulation and band bending for gold and indium contacts was studied. Repolarization/depolarization induced by additional illumi- nation with sub/above bandgap excitation laser was observed and ex- ploited for determination of the deep level energy. Results obtained by the Pockels-effect method were supported with luminescence measure- ments. Correlation between the occurrence of deep levels and surface point defects was discovered. Keywords: Pockels electro-optical effect, Cadmium Telluride ra- diation detector, Electric field, Schottky...