La compréhension et l'étude du système nerveux est un des grands enjeux du XXIème siècle à la fois pour la recherche fondamentale, mais également pour la mise au point de neuroprothèses implantables pour la réhabilitation fonctionnelle (exemple : implants rétiniens, implants cochléaires). Depuis quelques années, des systèmes basés sur l'utilisation de multi-électrodes (MEA : Multi-Electrode-Array) offrent la possibilité d'enregistrer des milliers de cellules interconnectées entre-elles sur plusieurs jours sur des tranches de tissu nerveux ou des systèmes nerveux complets. Mais une des limites de cette technique est le faible nombre de voies de ces systèmes (64 voies). Les travaux de cette thèse ont consisté à développer une technologie de fabrication permettant la réalisation d'un système multiélectrode s « haute densité 3D ». Cela passe par le développement d'une nouvelle technologie dans la réalisation de micro pointes basée sur la gravure profonde du silicium (DRIE), qui permet d'obtenir des pointes en silicium de 80 µm de haut espacées de 50 µm. Des matrices 60, 256 et 1024 voies ont été fabriquées par cette technique. L'utilisation de la stimulation est aussi un point important dans l'étude de ces grands réseaux, mais il n'est pas possible actuellement de disposer de système permettant une stimulation focale. Pour résoudre ce problème, nous avons développé des matrices spécifiques permettant d'obtenir des stimulations focales du tissu. Nous avons également dans ces travaux de thèse étudié le comportement de l'interface métal/liquide, qui est cruciale pour la réalisation de MEA, en utilisant des techniques d'électrochimie / One challenge of the XXIème century will be to understand dynamics of large neural networks for research and to develop neuroprothesis implant (ex retinal implant, cochlear implant). Today microelectrodes arrays (MEAs) positioned in contact with the neural tissue offer the opportunity to record and simulate neuronal tissue. But the main drawback of his technique is low number of recording sites (typically 64). During this thesis, we have developed a specific process using deep reactive ions etching (DRIE), to achieve high density 3D MEAs containing several hundreds of microelectrodes. We have fabricated microneedles 80 µm of height with spacing of 50 µm and MEAs with 60 – 256 and 1024 microelectrodes have been built with this process. Microstimulation, which makes use of electrodes on the micron scale, is gaining increasing interest in both fundamental and clinical research, opening the possibility to stimulate small groups of neurons instead of large regions. However, controlling the spatial extent of microstimulation to achieve focal activation of neuron networks is a challenge. We have proposed a new configuration of MEA specifically designed to achieve a local stimulation. We have also characterised the interface metal/liquid, that was very important for MEA and we have used electrochemistry techniques

This thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform and its important performance metrics. The second chapter discusses ultra-wide tuneability and the critical role that this functionality can have on real world applications. The third chapter presents simulated and measured results of two wideband ring oscillators (8-18 GHz) designed and fabricated in the Jazz 120 BiCMOS platform. A 7-22 GHz wideband VGA in the 8HP platform is also presented further exemplifying the wideband capabilities of SiGe HBTs.

The rechargeable lithium ion batteries (LIB) are playing increasingly important roles in powering portal commercial electronic devices. They are also the potential power sources of electric mobile vehicles. The first kind of the cathode materials, LiXCoO2, was commercialized by Sony Company in 1980s, and it is still widely used today in LIB. However, the high cost of cobalt source, its environmental unfriendliness and the safety issue of LiXCoO2 have hindered its widespread usage today. Searching for alternative cathode materials with low cost of the precursors, being environmentally benign and more stable in usage has become a hot topic in LIB research and development. In the first part of this study, lithium nickel manganese cobalt oxide (LiNi0.6Mn0.35Co0.05O2) is studied as the electrode. The materials are synthesized at high temperatures by solid state reaction method. The effect of synthesis temperature on the electrochemical performance is investigated, where characterizations by, for example, X-ray diffraction (XRD) and scanning electron microscopy (SEM), for particle size distribution, specific surface area, and charge-discharge property, are done over samples prepared at different conditions for comparison. The electrochemical tests of the rechargeable Li ion batteries using LiNi0.6Mn0.35Co0.05 cathode prepared at optimum conditions are carried out in various voltage ranges, at different discharge rates and at high temperature. In another set of experiments, the material is adopted as anode with lithium foil as the cathode, and its capacitance is tested. In the second part of this study, the iron based cathode material is investigated. Lithium iron orthosilicate with carbon coating is synthesized at 700℃ by solid state reaction, which is assisted by high energy ball milling. Characterizations are done for discharge capacities of the samples with different carbon weight ratio coatings. / published_or_final_version / Physics / Master / Master of Philosophy

Not available / text

The thermodynamic conditions for the behaviour of silicon in the lower part of the blast furnace have been the focus of the thesis. More specifically, the influences of temperature, carbon activity, total gas pressure and Fe reoxidation on silicon have been studied. Calculations show that an increased temperature gives higher equilibrium ratio between silicon in hot metal and slag. Furthermore, laboratory reduction studies shows that the carbon activity in the cohesive zone increase with an increased reduction time. Increased carbon activity will increase the equilibrium silicon content in liquid metal. Equilibrium calculations based on tapped hot metal and slag shows that the equilibrium silicon content of the liquid metal phase is higher than measured at tapping. Around the raceway area the equilibrium silicon content is very high. The high equilibrium silicon content makes it important to differ between the conditions under operation and the conditions of samples taken out of the blast furnace before studied. The equilibrium silicon content is strongly correlated to the CO gas partial pressure. Often this partial pressure is changed during sampling and cooling of samples. At tapping the equilibrium partial pressure of CO has been calculated to higher values than the total gas pressure inside the blast furnace. Metal droplets found in tapped slags are probably formed by reduction of FeO. In the periphery part of the lower part of the blast furnace, it is believed that mainly FeO oxidises silicon in hot metal. It is not expected that the metal droplets in the slag is formed if FeO oxidises dissolved silicon. Instead, the iron droplets may form at reactions with gas, coke carbon or coal powder carbon. Around some droplets increased magnesium content has been found. This may be due to reactions with gaseous magnesium that, according to thermodynamic conditions, is easy to form. It has been reported that much FeO may be formed in the raceway area. The metal droplets may indicate how much FeO that reacts with other components than liquid iron. The iron found in metal droplets in the slag corresponds to between 0.02 and 0.2 wt-% FeO in the slag.

Silicon and silicon-based materials have been investigated for the fabrication of electronic, optoelectronic, solar, and structural/mechanical devices. To enable the continuous use of silicon-based materials for next generation device applications, new and inexpensive ways of fabricating features of silicon, and silica-based materials are needed. This dissertation investigates: 1) novel techniques for the fabrication of silica and silicon nanofeatures with potential application in the electronics and optoelectronics industry; 2) new designs of photomodifiable material systems (resists) for maskless patterning of silica filled composites for structural/mechanical applications. Sub-micron and nano-scaled features were fabricated onto silicon and silicon oxide substrates using a technique combining block copolymers and laser interference ablation. The sacrificial block copolymers are loaded with metallic salt precursors and patterned with a UV laser to generate device-oriented nanofeatures. New photopolymerizable material systems (negative tone resists) were developed based on curcumin photosensitizer and an epoxy-acrylate, vinylether, and vinylether-acrylate silica¬-loaded material systems. The cationic and radical mechanisms employed by the monomeric systems under a high vapor pressure mercury lamp source were investigated with several materials characterization techniques.

Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).

In this thesis we have presented a thorough study on the optical and sensoristic properties of SRSN Mu-disks, in an isolated configuration and when coupled to a passive Si3N4 waveguide placed underneath. The whole structure of the device have been previously simulated in order to study the behavior of the supported WGM when subject to a geometrical variation (i.e.: radius, thickness, shape of the edge of the isolated Mu-disk): the obtained results granted the realization of Mu-resonators with Q factor exceeding 104. The coupled structure have been then simulated with the main goal of maximizing the WGM intensity transmitted at the end of the WG. This task has been fulfilled through a careful optimization of the geometrical parameters (i.e.: X-Gap and Z-Gap). The subsequent step, involving the fabrication process of the sample - realized in the Centro Nacional de Microelectronica (CNM) of Bellaterra - has been carried out using standard CMOS compatible process. The deposition and the implantation of the Si3N4 has been performed by means of LPCVD technique, while for the SiO2 deposition the PECVD. Finally the optical elements has been defined by means of a two level photolithographic mask. On the produced samples we have performed a superficial analysis (SEM, AFM) with the aim of evaluate the presence of geometrical imperfections and estimation of the superficial roughness. Furthermore the EFTEM analysis revealed the absence of Si-nc inside the active layer. Using the Cut-back technique, low losses under 1 dB/cm have been found in both VIS and IR spectral range in the passive WG of different width. On the other hand, applying the SES technique on an Si-rich WG structure we have been able to extract the losses value of active material in a wide and continuous range of wavelength, defined inside the PL spectrum. As a result of a careful optimization of the active SRSN in terms of PL intensities and optical losses, we have been able to produce bright and high Q isolated Mu-disks, achieving maximum values about 1.4x104 in a wide spectral range in the VIS and emitting up to few nW on a single resonance. The reported Q values are the best ever reported in circular Si-based light emitting Mu-cavities and are just limited by the spectral resolution of our experimental setup. The coupled structures demonstrated Q values up to 1.48x103, which are susceptible to be greatly improved through optimization of the fabrication process. Through a prof of concept , we have demonstrated that these structures are very sensible to the surrounding material and are able to detect refractive index changes with sensitivities of 51.79 nm/RIU and minimum measured refractive index change of 1.15x10-3 RIU. / En esta tesis, realizada en el departament d' Electrònica de la Universitat de Barcelona se ha presentado un estudio detallado the las propiedades ópticas y sensoras de estructuras resonantes tipo micro-disco fabricados íntegramente en nitruro de silicio enriquecido con silicio (SRSN). El estudio se ha llevado a cabo bien en estructuras aisladas o en una configuración acoplada con una guía de onda passiva situada debajo de la cavidad. La totalidad de la estructura ha sido simulada con el fin de estudiar el comportamiento de los modos resonantes WGM soportados cuando se cambian las condiciones de contorno geómetricas y del material. Los resultado obtenidos han permitido la realización de estructuras resonantes con factores de calidad superiores a 104. El objetivo de las simulaciones ha sido el de maximizar la intensidad transmitida de los modos soportados (WGM) al final de la guía de onda. Este hito ha sido cumplido gracias a la optimización de los parámetros geómetricos relativos (el X-gap y el Z-gap). Una vez producidas las muestras, se procedió a la realización de un análisis de superficie (SEM, AFM) para evaluar la rugosidad efectiva de las estructuras y las eventuales imperfecciones geométricas. Como resultado de la optimización del material activo en términos de intensidad de fotoluminiscencia y pérdidas ópticas, se consiguieron realizar cavidades resonantes de alta emisión luminosa y buenos factores de calidad. En un nuevo montaje experimental de u-PL desarrollado íntegramente para el estudio de estos dispositivos, se obtuvieron valores máximos de Q = 1.4x104 en un rango espectral ancho en el visible. La potencia emitida en cada resonancia ha sido medida y cuantificada en un valor de nW. Este valor permite la utilización de detectores de silicio integrados. Con el fin de evaluar la sensitividad del dispositivo, se han llevado a cabo medidas de u-PL cambiando el entorno del microdisco y monitorizando el desplazamiento espectral que sufre una determinada resonancia. El resultado de estas medidas muestra un desplazamiento de 1.37 nm como consecuencia de un índice de refracción de An = 0.0038 RIU (refractive index unit).

This work investigates the fundamental device limits related to operational voltage constraints and linearity in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in order to support the design of robust next-generation high-frequency transceivers. This objective requires a broad understanding of how much "usable" voltage exists compared to conventionally defined breakdown voltage specifications, so the role of avalanche-induced current-crowding (or "pinch-in") effects on transistor performance and reliability are carefully studied. Also, the effects of intermodulation distortion are examined at the transistor-level for new and better understanding of the limits and trade-offs associated with achieving enhanced dynamic range and linearity performance on existing and future SiGe HBT technology platforms. Based on these investigations, circuits designed for superior dynamic range performance are presented.

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.