This document is focused on already existing single-ended frequency filters with modern active components working in current mode and their modification into fully-differential ended form. After the modification both versions were compared between each other. The first part informs about problems concerning analogue frequency filters. The second part deals with used active components - MO-CF (Multiple Output Current Follower), BOTA (Balanced transconductance amplifier), UCC (universal current conveyor), VDTA (Voltage differencing transconductance amplifier), CDTA (Current differencing transconductance amplifier) and VDCC (voltage differencing current conveyor). Four circuits have been chosen and transformed into their differential form. Two circuits have been chosen and realised into PCB and then practicaly measured in a laboratory. The last part is a summary of simulations and measured results and check of circuits behavior result.

The topic of this master’s thesis was a frequency filters and their realization using modern active elements like UVC, UCC, VFA, CFA and OTA. The base point of this thesis was designed frequency filters with these active elements, when the shape of the transfer function will be identical for all structures and compare the characteristics of active elements. The proposed frequency filters are second order with one or two active elements. In the first part of thesis are discussed basic properties of frequency filters, their properties and distribution. Next are described the general characteristics of active filters and their basic elements such as operational amplifier OTA, VFA and CFA, and recently more frequently used voltage and current conveyor. The second part is the frequency filters designed with these elements is the same transfer function. Subsequently, simulations are done all the filters and obtained the frequency response. Finally, these filters are experimentally made and made practical measurements.

This thesis deals with non-linear curcuit structures with current active elements. In its introduction this work deals with a description of the current active elements, such as current conveyor, transconductance operational amplifier and current follower. Further the text pays attention to the possiblities of the circuits for modification signals in analogue technology. First are described circuits of diode limiters and transducer. Great attention is paid to the amplifiers with current active elements. Are propřed simulated and practically realized circuits of universal precise full-wave rectifiers using operational amplifier and current conveyor and made comparisons of known and proposed circuits. The paper also discussed other circuit structures using of current active elements, such as multiplier, divider, a triangular signal generator and oscillators.

Semestral thesis deals with fractional-order frequency filters. There is descripe proposal of the filter, their simulations and practical realizations. The first part is focused at the introduction to a frequency filters. The following is chapter which explore various proposals fractional-order frequency filters. The next chapter describes used activ elements in this thesis. Then there is briefly described a method of the signal flow graphs. The following is a description of the theoretical design of lowpass and highpass frequency filter, where order of the filter is between the first and second. Another part deal with the design and simulation of the four circuits. There are two curcuits consists of transconductance amplifiers (BOTA) and two curcuist consists of current followers. The last part of the thesis deals with practical realization of the two fractional-order filters.

This thesis deals with the fractional (1+)-order filters. The proposed filters operate in the current-mode. The derivation of the filters has been achieved using a third-order aproximation of the coresponding fractional-order transfer functions. It also describes active elements such as universal current conveyor, current follower and operational transconductance amplifier. In the end of this thesis some new circuit solutions of the fractional-order filter are proposed. Then the proposed filters are realized and experimentally measured.

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Ce travail de recherche a été principalement motivé par les avantages importants apportés par la technologie UTBB FDSOI aux applications analogiques et RF de faible puissance. L'objectif principal est d'étudier le comportement dynamique du transistor MOSFET du type UTBB FDSOI et de proposer des modèles prédictifs et des recommandations pour la conception de circuits intégrés RF, en mettant un accent particulier sur le régime d'inversion modérée. Après une brève analyse des progrès réalisés au niveau des architectures du transistor MOSFET, un état de l’art de la modélisation du transistor MOSFET UTBB FDSOI est établi. Les principaux effets physiques impliqués dans le transistor à double grille avec une épaisseur du film de 7 nm sont passés en revue, en particulier l’impact de la grille arrière, à l’aide de mesures et de simulations TCAD. La caractéristique gm/ID en basse fréquence et la caractéristique ym/ID proposée pour la haute fréquence sont étudiées et utilisées dans une conception analogique efficace. Enfin, le modèle NQS haute fréquence proposé reproduit les mesures dans toutes les conditions de polarisation y compris l’inversion modérée jusqu’à 110 GHz. / This research work has been motivated primarily by the significant advantages brought about by the UTBB FDSOI technology to the Low power Analog and RF applications. The main goal is to study the dynamic behavior of the UTBB FDSOI MOSFET in light of the recent technology advances and to propose predictive models and useful recommendations for RF IC design with particular emphasis on Moderate Inversion regime. After a brief review of progress in MOSFET architectures introduced in the semiconductor industry, a state-of-the-art UTBB FDSOI MOSFET modeling status is compiled. The main physical effects involved in the double gate transistor with a 7 nm thick film are reviewed, particularly the back gate impact, using measurements and TCAD. For better insight into the Weak Inversion and Moderate Inversion operations, both the low frequency gm/ID FoM and the proposed high frequency ym/ID FoM are studied and also used in an efficient first-cut analog design. Finally, a high frequency NQS model is developed and compared to DC and S-parameters measurements. The results show excellent agreement across all modes of operation including very low bias conditions and up to 110 GHz.

The aim of the thesis was design of reconnection-less and electronically reconfigurable filters of SISO type with non-traditional active elements. Adjustability of bandwidth or quality factor is also required. First part of the thesis deals with theoretical analysis of filters, their operation modes and design of frequency filters using Signal-flow graph method aswell. Last but not least, electronical reconfiguration of transfer function and parasitic analysis was discussed. Another part describes active elements used in the practical part of thesis. Behaviors and design of active elements using existing circuits (e.g. UCC,EL2082) are described and their transformation into the Signal-flow graph form too. In the practical part five reconnection-less and reconfigurable filters of SISO type was designed using SNAP program. Simulations were done using Orcad program with ideal and real simulation models of active elements. Last part deals with filter design in EAGLE and experimental measurement.

Les travaux présentés dans cette thèse sont consacrés à l'investigation du fonctionnement des technologies bipolaires, et plus particulièrement des technologies BiCMOS SiGe, pour une utilisation à température cryogénique. Un état de l'art sur les transistors bipolaires et les bruits électroniques que l'on rencontre sur ce genre de technologie sont donnés avec une approche orientée vers les basses températures. Ces rappels permettent d'aborder les mesures, des paramètres basse fréquence et du bruit, réalisées sur des transistors bipolaires silicium et sur deux technologies SiGe à 300 K, 77 K et 4.2 K. Il est ensuite présenté deux réalisations d'ASIC cryogénique en technologie standard BiCMOS SiGe. La première est un amplificateur bas bruit (1 nV/sqrtHz) et large bande (1 GHz) fonctionnant à 77 K. Il est destiné à la caractérisation de bolomètres supraconducteurs YBaCuO à électrons chauds. La seconde réalisation est un circuit de lecture et de multiplexage de matrice de SQUID. Il est, en particulier, présenté le développement, la réalisation et le test d'un amplificateur ultra bas bruit (0.2 nV/sqrtHz) avec deux entrées multiplexées fonctionnant à 4.2 K.