Industrial systems often require the acquisition of real-world analog signals for several applications. Various physical phenomena such as displacement, pressure, temperature, light intensity, etc. are measured by sensors, which is a type of transducer, and then converted into a corresponding electrical signal. The electrical signal obtained from the sensor, usually a few tens mV in magnitude, is subsequently conditioned by means of amplification, filtering, range matching, isolation etc., so that the signal can be rendered for further processing and data extraction. This thesis presents the design and implementation of a general purpose op amp used to condition a reflective object sensor’s output. The op amp is used in a non-inverting configuration, as a current-to-voltage converter to transform a phototransistor current into a usable voltage. The op amp has been implemented using CMOS architecture and fabricated in AMI 0.5-µm CMOS process available through MOSIS. The thesis begins with an overview of the various circuits involving op amps used in signal conditioning circuits. Owing to the vast number of applications for sensor signal conditioning circuits, a brief discussion of an industrial sensor circuit is also illustrated. This is followed by the complete design of the op amp and its implementation in the data acquisition circuit. The op amp is then characterized using simulation results. Finally, the test setup and the measurement results are presented. The thesis concludes with an overview of some possible future work on the sensor-op amp data acquisition circuit.

Developments in automotive (particularly hybrid electric vehicles), aerospace, and energy production industries over the recent years have led to expanding research interest in integrated circuit (IC) design toward high-temperature applications. A high-voltage, high-temperature SOI process allows for circuit design to expand into these extreme environment applications. Nearly all electronic devices require a reliable supply voltage capable of operating under various input voltages and load currents. These input voltages and load currents can be either DC or time-varying signals. In this work, a stable supply voltage for embedded circuit functions is generated on chip via a voltage regulator circuit producing a stable 5-V output voltage. Although applications of this voltage regulator are not limited to gate driver circuits, this regulator was developed to meet the demands of a gate driver IC. The voltage regulator must provide reliable output voltage over an input range from 10 V to 30 V, a temperature range of −50 ºC to 200 ºC, and output loads from 0 mA to 200 mA. Additionally, low power stand-by operation is provided to help reduce heat generation and thus lower operating junction temperature. This regulator is based on the LM723 Zener reference voltage regulator which allows stable performance over temperature (provided proper design of the temperature compensation scheme). This circuit topology and the SOI silicon process allow for reliable operation under all application demands. The designed voltage regulator has been successfully tested from −50 ºC to 200 ºC while demonstrating an output voltage variation of less than 25 mV under the full range of input voltage. Line regulation tests from 10 V to 35 V show a 3.7-ppm/V supply sensitivity. With the use of a high-temperature ceramic output capacitor, a 5-nsec edge, 0 to 220 mA, 1-µsec pulse width load current induced only a 55 mV drop in regulator output voltage. In the targeted application, load current pulse widths will be much shorter, thereby improving the load transient performance. Full temperature and input voltage range tests reveal the no-load supply current draw is within 330 µA while still providing an excess of 200 mA of load current upon demand.

This thesis is investigating the new globally asynchronous locally synchronous (GALS) technology for integrated circuits. Different types of asynchronous wrappers are tested and a new wrapper design is presented. It also investigates the possibility to use VHDL for asynchronous simulation and synthesis. The conclusions are that the GALS technology is possible to use but that it needs new synthesis tools, because todays tools are designed for synchronous technology.

Process variations and circuit aging continue to be main challenges to the power-efficiency of VLSI circuits, as considerable power budget must be allocated at design time to mitigate timing variations. Modern designs incorporate adaptive techniques for variation compensation to reduce the extra power consumption. The efficiency of existing adaptive approaches, however, is often significantly attenuated by the fine-grained nature of variations in nanometer technology such as random dopant fluctuation, litho-variation, and different rates of transistor degradation due to non-uniform activity factors. This dissertation addresses the limitations from existing adaptation techniques, and proposes new adaptive approaches to effectively compensate the fine-grained variations. Adaptive supply voltage (ASV) is one of the effective adaptation approaches for power-performance tuning. ASV has advantages on controlling dynamic and leakage power, while voltage generation and delivery overheads from conventional ASV systems make their application to mitigate fine-grained variations demanding. This dissertation presents a dual-level ASV system which provides ASV at both coarse-grained and fine-grained level, and has limited power routing overhead. Significant power reduction from our dual-ASV system demonstrates its superiority over existing approaches. Another novel technique on supply voltage adaptation for variation resilience in VLSI interconnects is proposed. A programmable boostable repeater design boosts switching speed by raising its internal voltage rail transiently and autonomously, and achieves fine-grained voltage adaptation without stand-alone voltage regulators or additional power grid. Since interconnect is a widely recognized bottleneck to chip performance and tremendous repeaters are employed on chip designs, boostable repeater has plenty of chances to improve system robustness. A low cost scheme for delay variation detection is essential to compose an efficient adaptation system. This dissertation presents an area-efficient built-in delay testing scheme which exploits BIST SCAN architecture and dynamic clock skew control. Using this built-in delay testing scheme, a fine-grained adaptation system composed of the proposed boostable repeater design and adaptive clock skew control is proposed, and demonstrated to mitigate process variation and aging induced timing degradations in a power as well as area efficient manner.

In spite of significant progress during last couple of decades, ESD still affects production yields, manufacturing costs, product quality, product reliability and profitability. The objective of an ESD protection circuit is to create a harmless shunting path for the static electricity before it damages the sensitive electronic circuits. As the devices are scaling down, while ESD energy remains the same, VLSIs are becoming more vulnerable to ESD stress. This higher susceptibility to ESD damage is due to thinner gate oxides and shallower junctions. Furthermore, higher operating frequency of the scaled technologies enforces lower parasitic capacitance of the ESD protection circuits. Hence, increasing the robustness of the ESD protection circuits with minimum additional parasitic capacitance is the main challenge in state of the art CMOS processes. Furthermore with scaling, the integration of analog blocks such as ADC, PLL’s, DLL’s, oscillator etc. on digital chips has provided cheap system on chip (SOC) solutions. However, when analog and digital chip are combined into single mixed-signal chip, on-chip noise coupling from the digital to the analog circuitry through ESD protection circuits becomes a big concern. Thus, increasing supply noise isolation while ensuring the ESD protection robustness is also a big challenge. In this thesis, several ESD protection circuits and devices have been proposed to address the critical issues like increased leakage current, slower turn-on time of devices, increased susceptibility to power supply isolation etc. The proposed ESD protection circuits/devices have been classified into two categories: Pad based ESD protection in which the ESD protection circuits are placed in the I/O pads, and Rail based ESD in which ESD protection circuit is placed between power supplies. In our research, both these aspects have been investigated. The Silicon Controlled Rectifier (SCR) based devices have been used for Pad ESD protection as they have highest ESD protection level per unit area. Two novel devices Darlington based SCR (DSCR) and NMOS Darlington based SCR (NMOS-DSCR) having faster turn-on time, lower first breakdown voltage and low capacitance have been proposed. The transient clamps have been investigated and optimized for Rail based ESD protection. In this research, we have addressed the issue of leakage current in transient clamps. A methodology has been purposed to reduce the leakage current by more than 200,000 times without having major impact on the ESD performance. Also, the issue of noise coupling from digital supply to analog supply through the ESD protection circuits has been addressed. A new transient clamp has been proposed to increase the power supply noise isolation. Finally, a new methodology of placement of analog circuit with respect to transient clamp has been proposed to further increase the power supply noise isolation.

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It is well known that many of the optimization problems which arise in applications are <I>hard</I>, which usually means that they are NP-hard. Hence much research has been devoted to finding <I>good</I> relaxations for these hard problems. Usually a <I>good</I> relaxation is one which can be solved (either exactly or within a prescribed numerical tolerance) in polynomial-time. Nesterov and Nemirovskii showed that by this criterion, many convex optimization problems are good relaxations. This thesis presents new convex relaxations for two such hard problems, namely the Maximum-Cut (Max-Cut) problem and the VLSI (Very Large Scale Integration of electronic circuits) layout problem. We derive and study the properties of two new strengthened semidefinite programming relaxations for the Max-Cut problem. Our theoretical results hold for every instance of Max-Cut; in particular, we make no assumptions about the edge weights. The first relaxation provides a strengthening of the well-known Goemans-Williamson relaxation, and the second relaxation is a further tightening of the first. We prove that the tighter relaxation automatically enforces the well-known triangle inequalities, and in fact is stronger than the simple addition of these inequalities to the Goemans-Williamson relaxation. We further prove that the tighter relaxation fully characterizes some low dimensional faces of the cut polytope via the rank of its feasible matrices. We also address some practical issues arising in the solution of these relaxations and present numerical results showing the remarkably good bounds computed by the tighter relaxation. For the VLSI layout problem, we derive a new relaxation by extending the <I>target distance</I> concept recently introduced by Etawil and Vannelli. The resulting AR (Attractor-Repeller) model improves on the NLT (Non-linear optimization Layout Technique) method of van Camp et al. by efficiently finding a good initial point for the NLT solver. Because the AR model is not a convex optimization problem, we isolate the source of the non-convexity and thereby derive a convex version of the model. This derivation leads to the definition of certain generalized target distances with an interesting practical interpretation. Finally, we present numerical results that demonstrate the potential of the AR model.

Over the past decade, low power, energy efficient VLSI design has been the focal point of active research and development. The rapid technology scaling, the growing integration capacity, and the mounting active and leakage power dissipation are contributing to the growing complexity of modern VLSI design. Careful power planning on all design levels is required. This dissertation tackles the low-power, low-energy challenges in deep sub-micron technologies on the architecture and circuit levels. Voltage scaling is one of the most efficient ways for reducing power and energy. For ultra-low voltage operation, a new circuit technique which allows bulk CMOS circuits to work in the sub-0. 5V supply territory is presented. The threshold voltage of the slow PMOS transistor is controlled dynamically to get a lower threshold voltage during the active mode. Due to the reduced threshold voltage, switching speed becomes faster while active leakage current is increased. A technique to dynamically manage active leakage current is presented. Energy reduction resulting from using the proposed structure is demonstrated through simulations of different circuits with different levels of complexity. As technology scales, the mounting leakage current and degraded noise immunity impact performance especially that of high performance dynamic circuits. Dual threshold technology shows a good potential for leakage reduction while meeting performance goals. A model for optimally selecting threshold voltages and transistor sizes in wide fan-in dynamic circuits is presented. On the circuit level, a novel circuit level technique which handles the trade-off between noise immunity and energy dissipation for wide fan-in dynamic circuits is presented. Energy efficiency of the proposed wide fan-in dynamic circuit is further enhanced through efficient low voltage operation. Another direct consequence of technology scaling is the growing impact of interconnect parasitics and process variations on performance. Traditionally, worst case process, parasitics, and environmental conditions are considered. Designing for worst case guarantees a fail-safe operation but requires a large delay and voltage margins. This large margin can be recovered if the design can adapt to the actual silicon conditions. Dynamic voltage scaling is considered a key enabler in reducing such margin. An on-chip process identifier to recover the margin required due to process variations is described. The proposed architecture adjusts supply voltage using a hybrid between the one-time voltage setting and the continuous monitoring modes of operation. The interconnect impact on delay is minimized through a novel adaptive voltage scaling architecture. The proposed system recovers the large delay and voltage margins required by conventional systems by closely tracking the actual critical path at anytime. By tracking the actual critical path, the proposed system is robust and more energy efficient compared to both the conventional open-loop and closed-loop systems.

This thesis presents several algorithms that update the vertex separation of a tree after the tree is modified; the vertex separation of a graph measures the largest number of vertices to the left of and including a vertex that are adjacent to vertices to the right of the vertex, when the vertices in the graph are arranged in the best possible linear ordering. Vertex separation was introduced by Lipton and Tarjan and has since been applied mainly in VLSI design. The tree is modified by either attaching another tree or removing a subtree. The first algorithm handles the special case when another tree is attached to the root, and the second algorithm updates the vertex separation after a subtree of the root is removed. The last two algorithms solve the more general problem when subtrees are attached to or removed from arbitrary vertices; they have good running time performance only in the amortized sense. The running time of all our algorithms is sublinear in the number of vertices in the tree, assuming certain information is precomputed for the tree. This improves upon current algorithms by Skodinis and Ellis, Sudborough, and Turner, both of which have linear running time for this problem. Lower and upper bounds on the vertex separation of a general graph are also derived. Furthermore, analogous bounds are presented for the cutwidth of a general graph, where the cutwidth of a graph equals the maximum number of edges that cross over a vertex, when the vertices in the graph are arranged in the best possible linear ordering.