Die vorliegende Arbeit beschreibt den Verlauf der Forschung von der Entwicklung einer neuartigen Methode der gepulsten Laser-Plasmaabscheidung (PLD) über die Untersuchung der ternären In- und Al-Legierungssysteme von metastabilem orthorhombischen κ-Ga2O3 auf der Basis dieser Methode hin zu Multi-Quantengraben (QW) Supergitter (SL) Heterostrukturen für transparente Quantengrabeninfrarotphotodetektoren (QWIPs). Im ersten Teil wird die Methode, welche vertical continuous composition spread (VCCS) PLD genannt wird, eingeführt und am MgxZn1−xO Legierungssystem erprobt. Die Methode erlaubt die Kontrolle der Komposition von Dünnfilmen über die radiale Position des PLD Laserspots auf der Targetoberfläche. Das ist eine wichtige Voraussetzung für die Bestimmung der kompositionsabhängigen Eigenschaften der Legierungssysteme und für präzise Profile der physikalischen Eigenschaften in Wachstumsrichtung für das Design von Bauelementen. Die Dünnfilme mit 0 ≤ x ≤ 0.4 zeigen die gleichen Eigenschaften wie solche, die mit Standard-PLD abgeschieden wurden. Numerische Modelle werden präsentiert, welche die Dünnfilmkomposition exakt vorhersagen. Im zweiten Teil werden κ-Ga2O3 Dünnfilme durch die Beigabe von Zinn während des PLD Prozesses stabilisiert. Die Dünnfilme weisen hohe kristalline Qualität, glatte Oberflächen und große Bandlücken (Eg ≈ 4.9 eV) auf. Ein Wachstumsmodell wird präsentiert, welches Zinn als Oberflächenschicht beschreibt. Im dritten Teil werden die In- und Al-Legierungssysteme von κ-Ga2O3 mittels VCCS PLD untersucht. Die Löslichkeitsgrenzen xIn <~ 0.35 und xAl <~ 0.65 sind die höchsten bislang berichteten. In- und out-of-plane Gitterkonstanten wurden in Abhängigkeit der Zusammensetzung bestimmt und Eg konnte von 4.1 eV bis 6.4 eV variiert werden. Die Position des Valenzbandmaximums wird als unabhängig von der Komposition gezeigt, womit die Variation in Eg den Leitungsbandunterschieden gleicht und Detektionsbereiche vom fernen IR bis in das Sichtbare für QWIP-Anwendungen bedeutet. Berechnungen anhand dieser Ergebnisse ergeben Polarisationsladungsdichten an Grenzflächen von Heterostrukturen gleich oder höher derer im etablierten AlGaN/GaN System, welche wichtig zur Polarisationsdotierung zur Besetzung des Grundzustandes in QWIPs sind. Dies bestätigt das große Potential der κ-Phase. Im letzten Teil werden erste kohärent gewachsene κ-(AlxGa1−x)2O3/Ga2O3 SL Strukturen untersucht. Glatte Grenzflächen im Bereich weniger Monolagen werden gezeigt und es konnten kritische Dicken für die κ-Ga2O3 QW Schichten bestimmt werden, die für QWIP-Anwendungen genügen. / The presented thesis describes the research path from the development of a novel pulsed laser deposition (PLD) technique over the exploration of the ternary In- and Al-alloy systems of metastable orthorhombic κ-Ga2O3 employing this technique towards multi-quantum well (QW) superlattice (SL) heterostructures for solar-blind quantum well infrared photodetector (QWIP) applications. In the first part, the PLD technique called vertical continuous composition spread (VCCS) PLD employing radially-segmented targets is established and tested on the well-known MgxZn1−xO alloy system. The technique enables direct control of the chemical composition of thin films by a variation of the radial position of the PLD laser spot on the target surface. This is a prerequisite for a discrete compositional screening of alloy properties and the exact tailoring of physical parameters in growth direction for heterostructure device design. The resulting thin films with 0 ≤ x ≤ 0.4 exhibit the same quality as thin films deposited by standard PLD and numerical models are presented that precisely predict the thin film composition. In the second part, κ-Ga2O3 thin films are stabilized by the addition of tin in the PLD process. The thin films show a high crystalline quality, smooth surfaces and large bandgaps (Eg ≈ 4.9 eV). A growth model is proposed based on tin acting as surfactant. In the third part, the In- and Al-alloy systems of κ-Ga2O3 are explored by VCCS PLD. Solubility limits of xIn <~ 0.35 and xAl <~ 0.65 are the highest reported to date. In- and out-of-plane lattice constants were determined as function of alloy composition and bandgap engineering from 4.1 eV to 6.4 eV is feasible within these limits. The energetic position of the valence band maximum was found independent on chemical composition such that the change in bandgap equals the conduction band offset rendering wavelength ranges from far IR to the visible spectral range in QWIP applications possible. Calculations based on these results found polarization charge densities at the interfaces of corresponding heterostructures on par or larger than for the established AlGaN/GaN system important for polarization doping to populate the ground state in QWIPs. This corroborates the high potential of the κ-phase. In the last part, first coherently grown κ-(AlxGa1−x)2O3/Ga2O3 SL heterostructures are presented. Smooth interfaces of the order of a few monolayers are confirmed and critical thicknesses for coherent growth of the Ga2O3 QW layer are found to be sufficient for QWIP applications.

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<p>Recent developments in semiconductor device technology have seen the advent of wide-bandgap (WBG) based devices that enable operation at high switching frequencies. These devices, such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), are becoming a favored choice in inverters for electric drive systems because of their lower switching losses and higher allowable operating temperature. However, the fast switching of such devices implies increased voltage edge rates (high <i>dv/dt</i>) that give rise to various undesirable effects including large common-mode currents, electromagnetic interference, transient overvoltages, insulation failure due to the overvoltages, and bearing failures due to</p> <p>microarcs. With increased use of these devices in transportation and industrial applications, it is imperative that accurate models and efficient simulation tools, which can predict these high-frequency effects and accompanying system losses, be established. This research initially focuses on establishing an accurate wideband model of a surface-mount permanent-magnet</p> <p>ac machine supplied by a WBG-based inverter. A new multirate simulation framework for predicting the transient behavior and estimating the power losses is then set forth. In this approach,</p> <p>the wideband model is separated into high- and low-frequency models implemented using two different computer programs that are best suited for the respective time scales. Repetitive execution of the high-frequency model yields look-up tables for the switching losses in the semiconductors, electric machine, and interconnecting cable. These look-up tables are then incorporated into the low-frequency model that establishes the conduction</p> <p>losses. This method is applied to a WBG-based electric drive comprised of a SiC inverter and permanent-magnet ac machine. Comparisons of measured and simulated transients are provided.</p>

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The trend towards more and all-electric apparatuses and more electrification will lead to higher electrical demand. Increases in electrical power demand can be provided by either higher currents or higher voltages. Due to "weight" and "voltage" drop, a raise in the current is not preferred; so, "higher voltages" are being considered. Another trend is to reduce the size and weight of apparatuses. Combined, these two trends result in the high voltage, high power density concept. It is expected that by 2030, 80% of all electric power will flow through "power electronics systems". In regards to the high voltage, high power density concept described above, "wide bandgap (WBG) power modules" made from materials such as "SiC and GaN (and, soon, Ga2O3 and diamond)", which can endure "higher voltages" and "currents" rather than "Si-based modules", are considered to be the most promising solution to reducing the size and weight of "power conversion systems". In addition to the trend towards higher "blocking voltage", volume reduction has been targeted for WBG devices. The blocking voltage is the breakdown voltage capability of the device, and volume reduction translates into power density increase. This leads to extremely high electric field stress, E, of extremely nonuniform type within the module, leading to a higher possibility of "partial discharge (PD)" and, in turn, insulation degradation and, eventually, breakdown of the module. Unless the discussed high E issue is satisfactorily addressed and solved, realizing next-generation high power density WBG power modules that can properly operate will not be possible. Contributions and innovations of this Ph.D. work are as follows. i) Novel electric field grading techniques including (a) various geometrical techniques, (b) applying "nonlinear field-dependent conductivity (FDC) materials" to high E regions, and (c) combination of (a) and (b), are developed; ii) A criterion for the electric stress intensity based upon accurate dimensions of a power device package and its "PD measurement" is presented; iii) Guidelines for the electrical insulation design of next-generation high voltage (up to 30 kV), high power density "WBG power modules" as both the "one-minute insulation" and PD tests according to the standard IEC 61287-1 are introduced; iv) Influence of temperature up to 250°C and frequency up to 1 MHz on E distribution and electric field grading methods mentioned in i) is studied; and v) A coupled thermal and electrical (electrothermal) model is developed to obtain thermal distribution within the module precisely. All models and simulations are developed and carried out in COMSOL Multiphysics. / Doctor of Philosophy / In power engineering, power conversion term means converting electric energy from one form to another such as converting between AC and DC, changing the magnitude or frequency of AC or DC voltage or current, or some combination of these. The main components of a power electronic conversion system are power semiconductor devices acted as switches. A power module provides the physical containment and package for several power semiconductor devices. There is a trend towards the manufacturing of electrification apparatuses with higher power density, which means handling higher power per unit volume, leading to less weight and size of apparatuses for a given power. This is the case for power modules as well. Conventional "silicon (Si)-based semiconductor technology" cannot handle the power levels and switching frequencies required by "next-generation" utility applications. In this regard, "wide bandgap (WBG) semiconductor materials", such as "silicon carbide (SiC)"," gallium nitride (GaN)", and, soon, "gallium oxide" and "diamond" are capable of higher switching frequencies and higher voltages, while providing for lower switching losses, better thermal conductivities, and the ability to withstand higher operating temperatures. Regarding the high power density concept mentioned above, the challenge here, now and in the future, is to design compact WBG-based modules. To this end, the extremely nonuniform high electric field stress within the power module caused by the aforementioned trend and emerging WBG semiconductor switches should be graded and mitigated to prevent partial discharges that can eventually lead to breakdown of the module. In this Ph.D. work, new electric field grading methods including various geometrical techniques combined with applying nonlinear field-dependent conductivity (FDC) materials to high field regions are introduced and developed through simulation results obtained from the models developed in this thesis.

With the development of solar energy, power conversion systems responsible for energy delivering from photovoltaic (PV) modules to ac or dc grid attract wide attentions and have significantly increased installations worldwide. Modular power conversion system has the highest efficiency of maximum power point tacking (MPPT), which can transfer more solar power to electricity. However, this system suffers the drawbacks of low power conversion efficiency and high cost due to a large number of power electronics converters. High-power density can provide potentials to reduce cost through the reduction of components and potting materials. Nowadays, the power electronics converters with the conventional silicon (Si) based power semiconductor devices are developed maturely and have limited improvements regarding in power conversion efficiency and power density. With the availability of wide bandgap devices, the power electronics converters have extended opportunities to achieve higher efficiency and higher power density due to the desirable features of wide bandgap devices, such as low on-state resistance, small junction capacitance and high switching speed. This dissertation focuses on the application of wide bandgap devices to the dc-dc power conversion for the modular PV applications in an effort to improve the power conversion efficiency and power density. Firstly, the structure of gallium-nitride (GaN) device is studied theoretically and characteristics of GaN device are evaluated under testing with both hard-switching and soft-switching conditions. The device performance during steady-state and transitions are explored under different power level conditions and compared with Si based devices. Secondly, an isolated high-efficiency GaN-based dc-dc converter with capability of wide range regulation is proposed for modular PV applications. The circuit configuration of secondary side is a proposed active-boost-rectifier, which merges a Boost circuit and a voltage-doubler rectifier. With implementation of the proposed double-pulse duty cycle modulation method, the active-boost-rectifier can not only serve for synchronous rectification but also achieve the voltage boost function. The proposed converter can achieve zero-voltage-switching (ZVS) of primary side switches and zero-current-switching (ZCS) of secondary side switches regardless of the input voltages or output power levels. Therefore, the proposed converter not only keeps the benefits of highly-efficient series resonant converter (SRC) but also achieves a higher voltage gain than SRC and a wide range regulation ability without adding additional switches while operating under the fixed-frequency condition. GaN devices are utilized in both primary and secondary sides. A 300-W hardware prototype is built to achieve a peak efficiency of 98.9% and a California Energy Commission (CEC) weighted efficiency of 98.7% under nominal input voltage condition. Finally, the proposed converter is designed and optimized at 1-MHz switching frequency to pursue the feature of high-power density. Considering the ac effects under high frequency, the magnetic components and PCB structure are optimized with finite element method (FEM) simulations. Compared with 140-kHz design, the volume of 1-MHz design can reduce more than 70%, while the CEC efficiency only drops 0.8% at nominal input voltage condition. There are also key findings on circuit design techniques to reduce parasitic effects. The parasitic inductances induced from PCB layout of primary side circuit can cause the unbalanced resonant current between positive and negative half cycles if the power loops of two half cycles have asymmetrical parasitic inductances. Moreover, these parasitic inductances reflecting to secondary side should be considered into the design of resonant inductance. The parasitic capacitances of secondary side could affect ZVS transitions and increase the required magnetizing current. Because of large parasitic capacitances, the dead-time period occupies a large percentage of entire switching period in MHz operations, which should be taken into consideration when designing the resonant frequency of resonant network. / Doctor of Philosophy / Solar energy is one of the most promising renewable energies to replace the conventional fossils. Power electronics converters are necessary to transfer power from solar panels to dc or ac grid. Since the output of solar panel is low voltage with a wide range and the grid side is high voltage, this power converter should meet the basic requirements of high step up and wide range regulation. Additionally, high power conversion efficiency is an important design purpose in order to save energy. The existing solutions have limitations of narrow regulating range, low efficiency or complicated circuit structure. Recently, the third-generation power semiconductors attract more and more attentions who can help to reduce the power loss. They are named as wide band gap devices. This dissertation proposed a wide band gap devices based power converter with ability of wide regulating range, high power conversion efficiency and simple circuit structure. Moreover, this proposed converter is further designed for high power density, which reduces more than 70% of volume. In this way, small power converter can merge into the junction box of solar panel, which can reduce cost and be convenient for installations.