Ce travail s'intègre dans les domaines de l'analyse et de la prédiction de la fiabilité des assemblages Multi-Chip Module. Il présente l'étude de fiabilité de microcâblages filaires (wire bonding) en très haute température à partir d'essais de vieillissement et d'analyses expérimentales. Les résultats permettent d'identifier les mécanismes de dégradation et d'évaluer les températures limites d'utilisation de ces interconnexions. Il développe une étude du comportement thermomécanique des joints collés à partir d'essais de caractérisation mécanique, d'essais de vieillissement accéléré et de simulations numériques par éléments finis. Ces méthodes permettent d'évaluer la criticité des assemblages dès la phase de conception. / This work is performed in analysis and prediction areas of Multi-Chip Module package reliability. It presents a reliability study on wire bonding in high temperature environment from aging tests and experimental analyzes. Results permit to identify degradation mechanisms and evaluate temperature limits of these interconnections. It develops a study of the thermomechanical behavior of adhesive joints from mechanical characterization tests, accelerated aging tests and finite element simulations. These methods are used to assess the criticality of packages from the design phase.

This thesis presents methods for fabricating MicroElectroMechanical System (MEMS) actuators and high-flow gas microvalves using wafer-level integration of Shape Memory Alloys (SMAs) in the form of wires and sheets. The work output per volume of SMA actuators exceeds that of other microactuation mechanisms, such as electrostatic, magnetic and piezoelectric actuation, by more than an order of magnitude, making SMA actuators highly promising for applications requiring high forces and large displacements. The use of SMAs in MEMS has so far been limited, partially due to a lack of cost efficient and reliable wafer-level integration approaches. This thesis presents new methods for wafer-level integration of nickel-titanium SMA sheets and wires. For SMA sheets, a technique for the integration of patterned SMA sheets to silicon wafers using gold-silicon eutectic bonding is demonstrated. A method for selective release of gold-silicon eutectically bonded microstructures by localized electrochemical etching, is also presented. For SMA wires, alignment and placement of NiTi wires is demonstrated forboth a manual approach, using specially built wire frame tools, and a semiautomatic approach, using a commercially available wire bonder. Methods for fixing wires to wafers using either polymers, nickel electroplating or mechanical silicon clamps are also shown. Nickel electroplating offers the most promising permanent fixing technique, since both a strong mechanical and good electrical connection to the wire is achieved during the same process step. Resistively heated microactuators are also fabricated by integrating prestrained SMA wires onto silicon cantilevers. These microactuators exhibit displacements that are among the highest yet reported. The actuators also feature a relatively low power consumption and high reliability during longterm cycling. New designs for gas microvalves are presented and valves using both SMA sheets and SMA wires for actuation are fabricated. The SMA-sheet microvalve exhibits a pneumatic performance per footprint area, three times higher than that of previous microvalves. The SMA-wire-actuated microvalve also allows control of high gas flows and in addition, offers benefits of lowvoltage actuation and low overall power consumption. / QC 20120514

The development of micro and nano-electromechanical systems (MEMS and NEMS) with entirely new or improved functionalities is typically based on novel or improved designs, materials and fabrication methods. However, today’s micro- and nano-fabrication is restrained by manufacturing paradigms that have been established by the integrated circuit (IC) industry over the past few decades. The exclusive use of IC manufacturing technologies leads to limited material choices, limited design flexibility and consequently to sub-optimal MEMS and NEMS devices. The work presented in this thesis breaks new ground with a multitude of novel approaches for the integration of non-standard materials that enable the fabrication of 3D micro and nanoelectromechanical systems. The objective of this thesis is to highlight methods that make use of non-standard materials with superior characteristics or methods that use standard materials and fabrication techniques in a novel context. The overall goal is to propose suitable and cost-efficient fabrication and integration methods, which can easily be made available to the industry. The first part of the thesis deals with the integration of bulk wire materials. A novel approach for the integration of at least partly ferromagnetic bulk wire materials has been implemented for the fabrication of high aspect ratio through silicon vias. Standard wire bonding technology, a very mature back-end technology, has been adapted for yet another through silicon via fabrication method and applications including liquid and vacuum packaging as well as microactuators based on shape memory alloy wires. As this thesis reveals, wire bonding, as a versatile and highly efficient technology, can be utilized for applications far beyond traditional interconnections in electronics packaging. The second part presents two approaches for the 3D heterogeneous integration based on layer transfer. Highly efficient monocrystalline silicon/ germanium is integrated on wafer-level for the fabrication of uncooled thermal image sensors and monolayer-graphene is integrated on chip-level for the use in diaphragm-based pressure sensors. The last part introduces a novel additive fabrication method for layer-bylayer printing of 3D silicon micro- and nano-structures. This method combines existing technologies, including focused ion beam implantation and chemical vapor deposition of silicon, in order to establish a high-resolution fabrication process that is related to popular 3D printing techniques. / <p>QC 20121207</p>