This work has examines the creation and use of chemical templates for nanocircuit and other nanodevice fabrication. Chemical templating can be useful in attachment, orientation and wiring of molecularly templated circuits. DNA origami provides a suitable method for creating molecularly templated circuits as DNA can be folded into complex shapes and functionalized with active circuit elements, such as semiconducting nanomaterials. Surface attachment of DNA origami structures can be accomplished by hybridization of dangling single-stranded DNA (ssDNA) on the origami structures with complementary surface-bound strands. Chemical templating provides a pathway for placing the patterned surface-bound attachment points needed for surface alignment of the molecular templates. Chemical templates can also be used to connect circuit elements on the surface by selectively metallizing the templates to form local wiring. AFM tip-directed nano-oxidation was selected as the method for patterning to create chemical templates. This project demonstrates new techniques for creating, continuous metallization of, and DNA attachment to nanochemical templates. Selective-continuous metallization of nanochemical templates is needed for wiring of circuit templates. To improve the metallization density and enable the continuous nano-scale metallization of amine-coated surfaces, the treatment of amine-coated surfaces with a plating additive prior to metallization was studied. The additive treatment resulted in a 73% increase in seed material, enabling continuous nano-scale metallization. A new method was developed to create amine nanotemplates by selective attachment of a polymer to surface oxide patterns created by nano-oxidation. The treatment of the templates with the additive enabled a five-fold reduction in feasible width for continuous metallization. Nano-oxidation was also used in the nanometer-scale patterning of a thiol-coated surface. Metallization of the background thiols but not the oxidized patterns resulted in a metal film that was a negative of the patterns. The resulting metal film may be useful for nanometer-scale pattern transfer. DNA-coated gold nanoparticles (AuNPs) were selectively attached to amine templates by an ionic interaction between the template and ssDNA attached to the particles. Only the ssDNA on the bottom of the AuNPs interacted with the template, leaving the top strands free to bind with complementary ssDNA. Attempts to attach origami structures to these particles were only marginally successful, and may have been hindered by the presence of complementary ssDNA in solution but not attached to the origami, or the by the low density of DNA-AuNPs attached to the templates. The formation of patterned binding sites by direct, covalent attachment of ssDNA to chemical templates was also explored. Initial results indicated that ssDNA was chemically bound to the templates and able to selectively bind to complementary strands; however, the observed attachment density was low and further optimization is required. Methods such as these are needed to enable nano-scale, site-specific alignment of nanomaterials.

In this dissertation, I developed a Pd seeding method in association with electroless plating, to successfully metallize both lambda DNA and DNA origami templates on different surfaces. On mica surfaces, this method offered a fast, simple process, and the ability to obtain a relatively high yield of metallized DNA nanostructures. When using lambda DNA as the templates, I studied the effect of Pd(II) activation time on the seed height and density, and an optimal activation time between 10 and 30 min was obtained. Based on the Pd seeds formed on DNA, as well as a Pd electroless plating solution, continuous Pd nanowires that had an average diameter of ~28 nm were formed with good selectivity on lambda DNA. The selected Pd activation time was also applied to metallize "T"-shape DNA origami, and Au coated branched nanostructures with a length between 200-250 nm, and wire diameters of ~40 nm were also fabricated. In addition, I found that the addition of Mg2+ ion into the reducing agent and electroless plating solution could benefit the surface retention of Pd seeded DNA and Au plated DNA structures. This work indicated that DNA molecules were promising templates to fabricate metal nanostructures; moreover, the formation of Au metallized branched nanostructures showed progress towards nanodevice fabrication using DNA origami. Silicon surfaces were also used as the substrates for DNA metallization. More complex circular circuit DNA origami templates were used. To obtain high enough seed density, multiple Pd seeding steps were applied which showed good selectivity and the seeded DNA origami remained on the surface after seeding steps. I used distribution analysis of seed height to study the effect of seeding steps on both average height and the uniformity of the Pd seeds. Four-repeated palladium seedings were confirmed to be optimal by the AFM images, seed height distribution analysis, and Au electroless plating results. Both Au and Cu metallized circular circuit design DNA origami were successfully obtained with high yield and good selectivity. The structures were maintained well after metallization, and the average diameters of Au and Cu samples were ~32 nm and 40 nm, respectively. Electrical conductivity measurements were done on these Au and Cu samples, both of which showed ohmic behavior. This is the first work to demonstrate the conductivity of Cu metallized DNA templates. In addition, the resistivities were calculated based on the measured resistance and the size of the metallized structures. My work shows promising progress with metallized DNA and DNA origami templates. The resulting metal nanostructures may find use as conducting interconnects for nanoscale objects as well as in surface enhanced Raman scattering analysis.

Since its inception as the Tungsten Workshop in 1984, AMC has served as the leading conference for the interconnect and contact metallization communities, and has remained at the leading edge of the development of tungsten, aluminum, and copper/low-K interconnects. As the semiconductor industry evolves, exciting new challenges in metallization are emerging, particularly in the areas of contacts to advanced devices, local interconnect solutions for highly-scaled devices, advanced memory device metallization, and 3D/packaging technology. While the conference content has evolved, the unique workshop environment of AMC fosters open discussion to create opportunities for cross-pollination between academia and industry. Submissions are covering materials, process, integration and reliability challenges spanning a wide range of topics in metallization for interconnect/contact applications, especially in the areas of: - Contacts to advanced devices (FinFET, Nanowire, III/V, and 2D materials) - Highly-scaled local and global interconnects - Beyond Cu interconnect - Novel metallization schemes and advanced dielectrics - Interconnect and device reliability - Advanced memory (NAND/DRAM, 3D NAND, STT and RRAM) - 3D and packaging (monolithic 3D, TSV, EMI) - Novel and emerging interconnects Executive Committee: Sang Hoon Ahn (Samsung Electronics Co., Ltd.) Paul R. Besser (Lam Research) Robert S. Blewer (Blewer Scientific Consultants, LLC) Daniel Edelstein (IBM) John Ekerdt (The University of Texas at Austin) Greg Herdt (Micron) Chris Hobbs (Sematech) Francesca Iacopi (Griffith University) Chia-Hong Jan (Intel Corporation) Rajiv Joshi (IBM) Heinrich Koerner (Infineon Technologies) Mehul Naik (Applied Materials Inc.) Fabrice Nemouchi (CEA LETI MINATEC) Takayuki Ohba (Tokyo Institute of Technology) Noel Russell (TEL Technology Center, America) Stefan E. Schulz (Chemnitz University of Technology) Yosi Shacham-Diamand (Tel-Aviv University) Roey Shaviv (Applied Materials Inc.) Zsolt Tokei (IMEC)

This dissertation constitutes two major sections. In the first major section, a kinetic analysis was established to investigate the electromigration (EM), enhanced intermetallic compound (IMC) growth and void formation for Sn-based Pb-free solder joints to Cu under bump metallization (UBM). The model takes into account the interfacial intermetallic reaction, Cu-Sn interdiffusion, and current stressing. A new approach was developed to derive atomic diffusivities and effective charge numbers based on Simulated Annealing (SA) in conjunction with the kinetic model. The finite difference (FD) kinetic model based on this approach accurately predicted the intermetallic compound growth when compared to empirical observation. The ultimate electromigration failure of the solder joints was caused by extensive void formation at the intermetallic interface. The void formation mechanism was analyzed by modeling the vacancy transport under electromigration. The effects of current density and Cu diffusivity in Sn solder were also investigated with the kinetic model. The second major section describes the integration of Step and Flash Imprint Lithography (S-FIL®) into an industry standard Cu/low-k dual damascene process. The yield on a Back End Of the Line (BEOL) test vehicle that contains standard test structures such as via chains with 120 nm vias was established by electrical tests. S-FIL shows promise as a cost effective solution to patterning sub 45 nm features and is capable of simultaneously patterning two levels of interconnect structures, which provides a low cost BEOL process. The critical processing step in the integration is the reactive ion etching (RIE) process that transfers the multilevel patterns to the inter-level dielectrics (ILD). An in-situ, multistep etch process was developed that gives excellent pattern structures in two industry standard Chemical Vapor Deposited (CVD) low-k dielectrics. The etch process showed excellent pattern fidelity and a wide process window. Electrical testing was conducted on the test vehicle to show that this process renders high yield and consistent via resistance. Discussions of the failure behaviors that are characteristic to the use of S-FIL are provided. / text

L'utilisation du diamant comme composant d'électronique de puissance est une perspective intéressante tant en ce qui concerne les applications hautes température que forte puissance. La problématique principale de ces travaux réalisés dans le cadre du programme Diamonix, réside dans l'étude et l'élaboration d'un packaging permettant la mise en oeuvre d'une puce diamant devant fonctionner à des températures variant entre -50°C et 300°C. Nous nous sommes intéressés au choix des matériaux de connexion de la puce avec son environnement. Suite à l'étude bibliographique, nous proposons différentes solutions de matériaux envisageables pour le substrat métallisé, les brasures et les métallisations. Dans un second temps, les différents éléments ont été réalisés puis caractérisés à partir d'essais de nanoindentation et de nanorayage. Des essais mécaniques ont permis de caractériser le comportement élastoviscoplastique et l'endommagement des brasures. Ces derniers essais ont servi de base expérimentale à l'identification des paramètres d'un modèle de comportement viscoplastique couplé avec l'endommagement et qui a été spécialement élaboré pour cette étude. Le modèle de comportement a été implémenté dans un code de calcul par éléments finis via une sous-routine. Il permet notamment de simuler le processus de dégradation d'un assemblage. Enfin, ce modèle de comportement a été mis en oeuvre dans des modélisations thermomécaniques de différentes configurations de véhicules test. / Use of diamond as constitutive component in power electronics devices is an interesting prospect for the high temperature and high power applications. The main challenge of this research work included in the Diamonix program is the study and the elaboration of a single-crystal diamond substrate with electronic quality and its associated packaging. The designed packaging has to resist to temperatures varying between -50°C and 300°C. We contributed to the choice of the connection materials intended to be used in the final test vehicle and which can handle such temperature gaps. In the first part, we present a state-of-the-art of the various materials solutions for extreme temperatures. Following this study, we propose a set of materials which considered as potential candidates for high temperature packaging. Special focus is given for the most critical elements in power electronic assemblies which are metallizations and solders. Once the materials choice carried out, thin substrate metallizations, solders and DBC coatings are studied using nanoindentation and nanoscratch tests. Mechanical tests were also carried out on solders to study their elastoviscoplastic and damage behavior. The experimental results are used as database for the identification of the parameters of the viscoplastic model coupled with a porous damage law, worked out for the case of solders. The behavior model is implemented as a user subroutine UMAT in a FE code to predict the degradation of a 2D power electronic assembly and various materials configuration for a 3D test vehicle.

La réalisation de revêtements métalliques en surface de matériaux composites à matrice organique est possible par le procédé cold spray. La construction de tels revêtements à partir de particules de cuivre sur un substrat contenant des fibres de carbone n'a pu aboutir que grâce à l'ajout d'une poudre polymère. Malgré son rôle dans la construction des dépôts, le polymère présente le désavantage d'être un très bon isolant électrique ayant, de ce fait, une influence très néfaste sur la conductivité des dépôts cold spray. Ces travaux ont donc été concentrés sur l'étude de l'influence de la microstructure de ces dépôts sur leur conductivité électrique. Plusieurs poudres de cuivre ont été mélangées dans diverses proportions avec du PEEK, un polymère thermoplastique. La projection cold spray de ces mélanges a abouti à la formation de dépôts homogènes sur les substrats composites. L'influence des caractéristiques des poudres et des paramètres de projection sur les caractéristiques des dépôts a été étudiée. De même, la déformation du PEEK lors de la projection a été analysée car elle joue un rôle important dans la construction du dépôt. L'étude des propriétés mécaniques du PEEK et des conditions de projection ont permis de simuler sa déformation. Dans la microstructure du dépôt, la présence du PEEK limite les contacts entre les particules de cuivre, abaissant fortement la conductivité électrique des dépôts. Un modèle morphologique de la microstructure a été développé afin d'étudier l'influence de la morphologie de la phase de cuivre sur la conductivité des dépôts. Ce modèle a permis de simuler des microstructures présentant diverses morphologies en 3 dimensions. Il ouvre ainsi la possibilité d'étudier numériquement l'influence de la morphologie de la microstructure des dépôts sur leur conductivité électrique. La conductivité a été mesurées expérimentalement sur des échantillons de dépôt. Un mélange de poudre et des paramètres optimaux ont alors pu être identifiés pour obtenir un dépôt cold spray sur un substrat composite à matrice organique avec une conductivité satisfaisante mais encore inférieure à celle du cuivre massif. / The Cold Spray process allows to manufacture metallic coatings onto Carbon Fiber-Reinforced Composite (CFRP). This process relies on the spraying of high-velocity powder particles to result in high deformation and build up to form a dense coating. However, forming a coating made of copper particles onto a substrate containing carbon fibers was achieved out only by mixing metallic powder with a polymer powder. Although the polymer allow to build up the coating onto CFRP, it is highly electrically insulating. It would therefore decrease the electrical conductivity of the coating drastically. Investigations were carried out on the influence of the coatings microstructure on electrical conductivity. Various copper powders, with different morphologies, granulometry and oxygen contents were mixed with PEEK powder, i.e. a thermoplastic polymer. Cold spray of these powders leads to homogeneous coatings onto CFRP. The characteristics of these coatings were studied as a function of the influence of powder characteristics and spraying parameters. The deformation of the PEEK was also investigated as it governed the build up of the coating. Mechanical testing of PEEK samples and in-situ spraying measurements were performed to feed impact simulations. Then, simulated and experimental impact morphologies of copper particles onto PEEK were compared. The PEEK behavior under impact also prevented sound contacts between copper particles, which decreased the coatings electrical conductivity significantly. A morphological model of the microstructure of the coating was developed to reproduce microstructures in 3D numerically. It allows to investigate numerically the influence of the copper phase morphology on coating conductivity. This conductivity was measured experimentally for various starting copper powders. A carefully selected blend of copper and PEEK powders and optimized spraying parameters lead to homogeneous coatings onto CFRP with an acceptable electrical conductivity but still below bulk copper conductivity.

Due to their ability to confer enhanced surface properties without compromising the properties of the substrate, coatings have become ubiquitous in heavy industrial applications for corrosion, wear, and thermal protection, among others. Kinetic Metallization (KM), a solid-state impact consolidation and coating process, is well-suited for depositing industrial coatings due to its versatility, low substrate heat input, and low cost. The ability of KM coatings to adhere to the substrate is determined by the quality of the interface. The purpose of this study is to develop a model to predict the interfacial quality of KM coatings using known coating and substrate properties. Of the various contributions to adhesion of KM coatings, research suggests that the thermodynamic Work of Adhesion (WAD) is the most fundamental. It is useful to define interfacial quality in terms of the critical strain energy release rate (GC) at which coating delamination occurs. Studies show that GC for a given interface is related to WAD. This study attempts to develop a theoretical model for calculating WAD and understand the relationship between GC and WAD. For a bimetallic interface between two transition metals, WAD can be theoretically calculated using known electronic and physical properties of each metal: the molar volume, V, the surface energy, γ, and the enthalpy of alloy formation, ΔHinterface; ΔHinterface is a function of the molar volume, V, the work function, φ, and the electron density at the boundary of the Wigner-Seitz cell, nWS.WAD for Ni-Cu and Ni-Ti interfaces were 3.51 J/m2 and 4.55 J/m2, respectively. A modified Four-point bend testing technique was used to experimentally measure GC for Ni-Cu and Ni-Ti specimens produced by KM. These tests yielded mean G­C values of 50.92 J/m2 and 132.68 J/m2 for Ni-Cu and Ni-Ti specimens, respectively. Plastic deformation and surface roughness are likely the main reasons for the large discrepancy between GC and WAD. At the 95% confidence level, the mean GC of the Ni-Ti interface is significantly higher than that of the Ni-Cu interface. Further testing is recommended to better understand the relationship between WAD and GC.

Die Dissertation verfolgt die Fragestellung biologische Materialien in herkömmlichen elektronischen Strukturen einzusetzen. Im Verlauf der Darstellung werden deshalb die elektrischen Eigenschaften von DNA mit Hinblick auf diesen Einsatz untersucht. Dabei wird zunächst gezeigt, dass sich native DNA durch seine geringe elektrische Leitfähigkeit wahrscheinlich nicht für einen Einsatz in elektronischen Stromkreisen eignet. Deswegen wird ein alternativer Ansatz entwickelt, bei dem DNA zur Assemblierung von dünnen Metalldrähten verwendet wird. Es wird ein Verfahren entwickelt, mit dem Palladium- und Platincluster mit einer Größe von 3 nm auf der DNA erzeugt werden können. Durch die weitere Anlagerung von Metall gelang die kontinuierliche Bedeckung der DNA mit Metall. Im Ergebnis entstehen metallische Clusterketten und Nanodrähte mit einem Durchmesser von 20 bis 100 nm und mehreren Mikrometern Länge. Diese metallischen Strukturen wurden erfolgreich zwischen zwei Goldkontakte integriert. Bei den Messungen konnte eine gute elektrische Leitfähigkeit mit linearer Strom-Spannungsabhängigkeit beobachtet werden. Damit sind diese Strukturen als Verbindungselemente in Schaltkreisen geeignet und somit kann DNA in einem Schaltkreis als strukturgebendes Element für die Assemblierung von Metalldrähten Verwendung finden. Die Anwendungsmöglichkeiten der in dieser Arbeit entwickelten DNA-Metallisierung erstrecken sich jedoch nicht nur auf den technologischen Bereich. Insbesondere konnten in den erzeugten Nanostrukturen Quanteneffekte der schwachen Lokalisierung und Elektron-Elektron-Wechselwirkung nachgewiesen werden. Diese Phänomene führen bei tiefen Temperaturen zu einem Widerstandsanstieg mit sinkender Temperatur. Grund für dieses Verhalten sind die geringen Abmessungen der Probe und eine stark gestörte innere Struktur der Nanodrähte. Damit erscheint die Assemblierung von nanoskaligen Strukturen auf einem biologischen Template als realistisches Konzept zur Untersuchung von Quantenphänomenen kleinster Strukturen.

In numerous Gram-negative and Gram-positive bacteria as well as in Archaea SL proteins form the outermost layer of the cell envelope. SL (glyco)monomers self-assemble with oblique (p2), tetragonal (p4), or hexagonal (p3, p6) symmetries [12]. SL subunits interact with each other and with the underlying cell surface by relatively weak non-covalent forces such as hydrogen-bonds, ionic bonds, salt-bridges or hydrophobic interactions. This makes them easy to isolate by applying chaotropic agents like urea and guanidine hydrochloride (GuHCl), chelating chemicals, or by changing the pH of the environment [10]. Upon dialysis in an ambient buffer monomers recrystallize into regular arrays that possess the forms of flat sheets, open ended cylinders, or spheres on solid substrates, at air-water intefaces and on lipid films, making them appealing for nanobiotechnological applications [3, 18]. The aim of this study was to investigate the structure, thermal stability, in vivo self-assembly process, recrystallization and metallization of three different recombinant SL proteins (SslA-eGFP, mSbsC-eGFP and S13240-eGFP) expressed in yeast S. cerevisiae BY4741 which could be further used in nanobiotechnological applications. In order to fulfill this aim, I investigated the in vivo expression of SL proteins (SslA, SbsC, S13240) tagged with eGFP (SL-eGFP) in the yeast S. cerevisiae BY4141. First, I characterized the heterologous expression of SL fusion constructs with growth and fluorescence measurements combined with Western blot analyses. Fluorescence microscopy investigations of overnight grown cultures showed that SslA-eGFP fusion protein was expressed as fluorescent patches, mSbsC-eGFP as tubular networks, and S13240-eGFP as hollow-like fibrillar network structures, while eGFP did not show any distinct structure Thermal stability of in vivo expressed SL-eGFP fusion proteins were investigated by fluorescence microscopy and immunodetection. In vivo self-assembly kinetics during mitosis and meiosis was the second main issue. In parallel, association of in vivo mSbsC-eGFP structures with the cellular components was of interest. A network of tubular structures in the cytosol of the transformed yeast cells that did not colocalize with microtubules or the actin cytoskeleton was observed. Time-resolved analysis of the formation of these structures during vegetative growth and sporulation was investigated by live fluorescence microscopy. While in meiosis ascospores seemed to receive assembled structures from the diploid cells, during mitosis surface layer structures were formed de novo in the buds. Surface layer assembly always started with the appearance of a dot-like structure in the cytoplasm, suggesting a single nucleation point. In order to get these in vivo SL assemblies stably outside the cells (in situ), cell distruption experiments were conducted. The tubular structures formed by the protein in vivo were retained upon bursting the cells by osmotic shock; however their average length was decreased. During dialysis, monomers obtained by treatment with chaotropic agents recrystallized again to form tube-like structures. This process was strictly dependent on calcium ions, with an optimal concentration of 10 mM. Further increase of the Ca2+ concentration resulted in multiple non-productive nucleation points. It was further shown that the lengths of the S-layer assemblies increased with time and could be controlled by pH. After 48 hours the average length at pH 9.0 was 4.13 µm compared to 2.69 µm at pH 5.5. Successful chemical deposition of platinum indicates the potential of recrystallized mSbsC-eGFP structures for nanobiotechnological applications. For example, such metalized protein nanotubes could be used in conductive nanocircuit technologies as nanowires.

Made available in DSpace on 2014-12-17T14:07:01Z (GMT). No. of bitstreams: 1 AndreaMAA.pdf: 2205764 bytes, checksum: 63a73bc4d3b5aa4b2d1dd4cc4bb34040 (MD5) Previous issue date: 2006-09-01 / The partial fixed prosthodontics restoration is used to rehabilitate form and function of partial or total compromised teeth, having to remain permanently joined to remainder tooth. The most useful material on prosthodontics is the feldspar porcelain, commercialized as aluminosilicate powders. Dental porcelains are presented with limited mechanical properties to rehabilitate extensive spaces. The association with Ni-Cr metallic systems (metal-ceramic system) allows that the metallic substructure compensates the fragile porcelain nature, preserving the thermal insulation and aesthetics desirable, as well as reducing the possibility of cracking during matication efforts. Cohesive flaws by low mechanical strength connect the metallic substructure to the oral environment, characterized by a electrolytic solution (saliva), by aggressive temperature, pH cyclic changes and mechanical requests. This process results on ionic liberation that could promote allergic or inflammatory responses, and/or clinical degradation of ceramometal system. The aim of this study was to evaluate the presence of an intermediate titanium layer on the microscopic fracture behavior of porcelains on ceramometal systems. Plasma deposition of titanium films result in regular passivating oxide layers which act as barriers to protect the metallic substrate against the hazardous effects of corrosive saliva. Tribocorrosion tests were performed to simulate the oral environment and mechanical stress, making it possible the early detection of crack formation and growth on metal-ceramic systems, which estimate the adherence between the compounds of this system. Plain samples consisting of dental feldspar porcelain deposited either onto metallic substrates or titanium films were fired and characterized by scanning electron microscopy. The result showed that the titanium film improved the adherence of the system compared to conventional metal-ceramic interfaces, thus holding crack propagation / A pr?tese parcial fixa ? empregada na reabilita??o da forma e fun??o de dentes parcial ou totalmente comprometidos, devendo permanecer unida permanentemente aos remanescentes dent?rios. O material mais utilizado na confec??o de pr?teses odontol?gicas ? a porcelana feldsp?tica, disponibilizada sob a forma de p? de aluminossilicatos. As porcelanas odontol?gicas apresentam-se com propriedades mec?nicas limitadas para a reabilita??o em monobloco de espa?os ed?ntulos extensos. A associa??o com sistemas met?licos de n?quel-cromo (sistema metalocer?mico) permite que a infra-estrutura met?lica compense a natureza fr?gil da porcelana, preservando-se a isola??o t?rmica e est?tica desej?veis, bem como reduzindo a possibilidade do desenvolvimento de trincas durante os esfor?os mastigat?rios. Falhas coesivas por baixa resist?ncia mec?nica da porcelana, comunicam a estrutura met?lica com o ambiente oral, caracterizado pela presen?a de uma solu??o eletrol?tica (saliva), pela agressividade das varia??es c?clicas de temperatura, pH e das solicita??es mec?nicas. Este processo resulta na libera??o de ?ons met?licos que podem desencadear respostas al?rgicas ou inflamat?rias, e /ou na degrada??o cl?nica precoce do sistema metalocer?mico. Este trabalho teve por objetivo avaliar o efeito da presen?a de uma camada intermedi?ria de tit?nio sobre o comportamento fratogr?fico, microsc?pico de porcelanas em sistemas metalocer?micos. A aplica??o por plasma de um filme fino de tit?nio, gera uma camada ?xida passivante regular que tende a proteger o substrato met?lico contra os efeitos corrosivos da saliva. Ensaios tribocorrosivos foram realizados para simular o ambiente oral, detectando precocemente a forma??o de trincas no sistema metalocer?mico, o que qualifica a ader?ncia entre os componentes do referido sistema. Foram produzidas amostras planas nas quais suspens?es de porcelana feldsp?tica odontol?gica foram depositadas e queimadas sobre substratos met?licos modificados por filme fino de tit?nio, comparando-as com o sistema metalocer?mico convencional. O sistema de teste apresentou melhores resultados, caracterizando-se pelo menor n?mero de tra?os de fratura superficial adjacentes ? ?rea de ensaio