Células eletroquímicas poliméricas emissoras de luz, PLECs, são dispositivos eletrônicos orgânicos que vêm despertando muito interesse comercial por operarem sob baixa tensão com alto desempenho e sem a necessidade de eletrodos específicos, como o óxido de estanho e índio (ITO), cálcio entre outros. Esta característica confere a possibilidade de processamento de baixo custo e de obter dispositivos flexíveis. Nas PLECs a injeção de portadores eletrônicos de carga nas interfaces, entre a camada ativa do dispositivo e seus eletrodos, é facilitada por ação de espécies iônicas, que são inseridas no material polimérico por adição de um sal. Do ponto de vista científico, o interesse atual reside na completa compreensão dos fenômenos de transporte de portadores eletrônicos no interior do dispositivo. Hoje existem dois modelos concorrentes. Um considera o transporte eletrônico por difusão e o outro leva em consideração a dopagem eletroquímica e a consequente formação de uma junção PIN (semicondutor dopado tipo-p camada isolante semicondutor dopado tipo-n). Nesse contexto, propusemos a fabricação e caracterização elétrica de PLECs com diversas composições e espessuras a fim de confrontar os resultados experimentais com os modelos em questão. Demonstramos a existência de uma concentração crítica de sal, abaixo da qual a operação da PLEC é promovida predominantemente por injeção auxiliada pela formação de duplas-camadas devido ao movimento iônico. No regime de tensões mais elevadas, além da injeção, ocorre a dopagem tipo-p e tipo-n e a formação da junção PIN. Além disso, determinamos que para tensões superiores à de operação o dispositivo apresenta comportamento ôhmico, com resistência elétrica proporcional à espessura do dispositivo e praticamente independente da temperatura. Nossos resultados mostraram que no regime de tensões mais baixas deve ocorrer um processo de transporte por difusão, mas à medida que a tensão aumenta, inicia-se um processo de dopagem tipo-p de um lado e tipo-n de outro, aumentando a condutividade das regiões dopadas e finalizando com a formação de uma junção PIN. Mostramos também que a tensão acumulada nas duplas-camadas independe do tipo de polímero eletrônico, e que a tensão de operação, aquela na qual o polímero luminesce, é semelhante á do gap da banda proibida do polímero luminescente. / Polymer light emitting electrochemical cells, PLECs, are organic electronic devices that have attracted commercial interest because they operate at low voltage and exhibit high performance without the need of specific electrodes such as indium tin oxide (ITO), calcium and others. This feature provides low cost of fabrication and exible devices. The charge injection in the PLECs is facilitated by the action of ionic species, which are inserted in the polymeric material by adding a salt. This thesis treats with a controversy related to transport phenomena along the bulk of the device. Currently, there is two opposite models. One that considers that transport is driven by diffusion mechanism; and the other takes into account the formation of a PIN junction (p-type semiconductor insulating layer n-type semiconductor). Here, we proposed the fabrication and characterization of PLECs having different compositions and thickness, and the results were faced up to the models. We showed the existence of critical concentration of salt, below of which the operation of the PLECs are mainly due to injection stimulated by the ionic double-layer. For higher applied voltages, the injection still exists but it is followed by a PIN junction formation. We also verified that for voltages above the turn-on the device electrical resistance is proportional to the sample thickness and is practically temperature-independent. Our results showed that for low voltages the transport is dominated by diffusion, but as the voltage increases, the semiconducting layer starts to be doped: p-type in one side, and n-type in the other. Therefore, the conductivity of the semiconducting layer increases, and it finalizes by the formation of the PIN junction. Finally, we showed that the double-layer characteristic does not depend on the electronic polymer, and that the value of the turn-on voltage is very close to that of the electronic gap of the forbidden band.

A novel solid state illumination source has been developed. A two terminal dual LED has been created with the ability to control the relative intensities of the two emission peaks by varying drive current. Doping profiles have been used to extend the dynamic range of the dual LED over other reported devices. Operation of the dual LEDs is explained as a function of drive current. In addition, novel use of phosphor mixtures allows the creation of a broadband spectral power distribution that can be varied using a dual LED as an excitation source. Combinations of phosphors that have varied excitation spectra provide the ability to selectively excite different phosphors with the different LED emission peaks. First and second generations of the two terminal dual LED and the phosphor combination are discussed. The final source has the ability to mimic the light of a blackbody radiator over a range of 3200 K - 5300 K. The development of a three terminal dual LED as a pump source was prohibited by the need for a III-nitride tunnel junction, that proved unattainable in the scope of this work. However, several novel doping schemes were investigated toward this end. Finally, a circadian light source has also been developed that can affect physiological changes in humans, and a light box for entrainment of circadian rhythms in rats has been built.

LEDs are being developed as the next generation lighting source due to their high efficiency and long life time, with a potential to save $15 billion per year in energy cost by 2020. State of the art LEDs are capable of emitting light at ~115 lm/W and have lifetime over 50,000 hours. It has already surpassed the efficiency of incandescent light sources, and is even comparable to that of fluorescent lamps. Since the total luminous flux generated by a single LED is considerably lower than other light sources, to be competitive the total light output must be increased with higher forward currents and packages of multiple LEDs. However, both of these solutions would increase the junction temperature, which degrades the performance of the LED--as the operating temperature goes up, the light intensity decreases, the lifetime is reduced, and the light color changes. The word "junction" refers to the p-n junction within the LED-chips. Critical to the temperature rise in high powered LED sources is the very large heat flux at the die level (100-500 W/cm2) which must be addressed in order to lower the operating temperature in the die. It is possible to address the spreading requirements of high powered LED die through the use of power electronic substrates for efficient heat dissipation, especially when the die are directly mounted to the power substrate in a chipon- board (COB) architecture. COB is a very attractive technology for packaging power LEDs which can lead improved price competiveness, package integration and thermal performance. In our work high power LED-chips (>1W/die) implementing COB architectures were designed and studied. Substrates for these packaging configurations include two types of power electronic substrates; insulated-metal-substrates (IMS) and direct-bonded-copper (DBC). To lower the operating temperature both the thermal impedance of the dielectric layer and the heat spreading in the copper circuit layers must be studied. In the analysis of our architectures, several lead free solders and thermal interface materials were considered. We start with the analysis of single-chip LED package and extend the result to the multi-chip arrays. The thermal resistance of the system is only a function of geometry and thermal conductivity if temperature-independent properties are used. Thus through finite element analysis (ANSYS) the effect of geometry and thermal conductivity on the thermal resistance was investigated. The drawback of finite element analysis is that many simulations must be conducted whenever the geometry or the thermal conductivity is changed. To bypass same of the computational load, a thermal resistance network was developed. We developed analytical expressions of the thermal resistance, especially focusing on the heat spreading effect at the substrate level. Finally, multi-chip LED arrays were analyzed through finite element analysis and an analytical analysis; where die-spacing is another important factor to determine the junction temperature. With this thermal analysis, critical design considerations were investigated in order to minimize device temperatures and thereby maximizing light output while also maximizing device reliability.

The objective of the research was to develop high quality GaN epitaxial growth on alternative substrates that could result in higher external quantum efficiency devices. Typical GaN growth on sapphire results in high defect materials, typically 10⁸⁻¹⁰cm⁻², due to a large difference in lattice mismatch and thermal expansion coefficient. Therefore, it is useful to study epitaxial growth on alternative substrates to sapphire such as ZnO which offers the possibility of lattice matched growth. High-quality metalorganic chemical vapor deposition (MOCVD) of GaN on ZnO substrate is hard to grow due to the thermal stability of ZnO, out-diffusion of Zn, and H₂back etching into the sample. Preliminary growths of GaN on bare ZnO substrates showed multiple cracks and peeling of the surface. A multi-buffer layer of LT-AlN/GaN was found to solve the cracking and peeling-off issues and demonstrated the first successful GaN growth on ZnO substrates. Good quality InGaN films were also grown showing indium compositions of 17-27% with no indium droplets or phase separation. ZnO was found to to sustain a higher strain state than sapphire, and thereby incorporating higher indium concentrations, as high as 43%, without phase separation, compared to the same growth on sapphire with only 32%. Si doping of InGaN layers, a known inducer for phase separation, did induce phase separation on sapphire growths, but not for growths on ZnO. This higher strain state for ZnO substrates was correlated to its perfect lattice match with InGaN at 18% indium concentration. Transmission electron microscopy results revealed reduction of threading dislocation and perfectly matched crystals at the GaN buffer/ZnO interface showing coherent growth of GaN on ZnO. However, Zn diffusion into the epilayer was an issue. Therefore, an atomic layer deposition of Al₂O₃was grown as a transition layer prior to GaN and InGaN growth by MOCVD. X-ray and PL showed distinct GaN peaks on Al₂O₃/ZnO layers demonstrating the first GaN films grown on Al₂O₃/ZnO. X-ray photoelectron spectroscopy showed a decrese in Zn diffusion into the epilayer, demonstrating that an ALD Al₂O₃layer was a promising transition layer for GaN growth on ZnO substrates by MOCVD.

Organic light-emitting diodes (OLEDs) have drawn much attention in the last two decades. In recent years, the power efficiency of OLEDs has been increased to exceed the efficiency of fluorescent light bulbs. However, such high-efficiency devices are typically based on small molecules that have to be evaporated in vacuum. A much higher fabrication throughput and therefore lowered costs are expected if high-efficiency OLEDs were processed from solution. This thesis shows how solution-processed electrophosphorescent multilayer OLEDs can be achieved by starting with an evaporated three-layer device structure and replacing layer by layer with a solution-processed layer. First, the hole-transport layer was replaced by a polymer and high efficiencies were observed when using a hole-transport polymer with a high ionization potential and a low hole mobility. Then, the emissive layer was replaced by a copolymer consisting of hole-transport groups and emissive complexes in its side-chains. OLEDs with four different colors are shown where the orange devices showed the highest efficiency. The orange copolymer was further optimized by making changes to the chemical nature of the polymer, such as different molecular weight, different concentrations of the emissive complex and different linkers between the side-chains and the polymer backbone. Finally, a three-layer solution-processed OLED was fabricated by crosslinking the hole-transport and the emissive layer, and by spin-coating an electron-transport polymer on top. Moreover, using the photocrosslinking properties of the emissive layer, solution-processed multilayer OLEDs of two different colors were patterned using photolithography to fabricate a white-light source with a tunable emission spectrum. Furthermore, with more and more organic semiconductors being integrated into the circuitry of commercial products, good electrical models are needed for a circuit design with predictive capabilities. Therefore, a model for the example of an organic single-layer diode is introduced in the last chapter of this thesis. The model has been implemented into SPICE and consists of an equivalent circuit that is mostly based on intrinsic material properties, which can be measured in independent experiments. The model has been tested on four different organic materials, and good agreement between model and experimental results is shown.

Células eletroquímicas poliméricas emissoras de luz, PLECs, são dispositivos eletrônicos orgânicos que vêm despertando muito interesse comercial por operarem sob baixa tensão com alto desempenho e sem a necessidade de eletrodos específicos, como o óxido de estanho e índio (ITO), cálcio entre outros. Esta característica confere a possibilidade de processamento de baixo custo e de obter dispositivos flexíveis. Nas PLECs a injeção de portadores eletrônicos de carga nas interfaces, entre a camada ativa do dispositivo e seus eletrodos, é facilitada por ação de espécies iônicas, que são inseridas no material polimérico por adição de um sal. Do ponto de vista científico, o interesse atual reside na completa compreensão dos fenômenos de transporte de portadores eletrônicos no interior do dispositivo. Hoje existem dois modelos concorrentes. Um considera o transporte eletrônico por difusão e o outro leva em consideração a dopagem eletroquímica e a consequente formação de uma junção PIN (semicondutor dopado tipo-p camada isolante semicondutor dopado tipo-n). Nesse contexto, propusemos a fabricação e caracterização elétrica de PLECs com diversas composições e espessuras a fim de confrontar os resultados experimentais com os modelos em questão. Demonstramos a existência de uma concentração crítica de sal, abaixo da qual a operação da PLEC é promovida predominantemente por injeção auxiliada pela formação de duplas-camadas devido ao movimento iônico. No regime de tensões mais elevadas, além da injeção, ocorre a dopagem tipo-p e tipo-n e a formação da junção PIN. Além disso, determinamos que para tensões superiores à de operação o dispositivo apresenta comportamento ôhmico, com resistência elétrica proporcional à espessura do dispositivo e praticamente independente da temperatura. Nossos resultados mostraram que no regime de tensões mais baixas deve ocorrer um processo de transporte por difusão, mas à medida que a tensão aumenta, inicia-se um processo de dopagem tipo-p de um lado e tipo-n de outro, aumentando a condutividade das regiões dopadas e finalizando com a formação de uma junção PIN. Mostramos também que a tensão acumulada nas duplas-camadas independe do tipo de polímero eletrônico, e que a tensão de operação, aquela na qual o polímero luminesce, é semelhante á do gap da banda proibida do polímero luminescente. / Polymer light emitting electrochemical cells, PLECs, are organic electronic devices that have attracted commercial interest because they operate at low voltage and exhibit high performance without the need of specific electrodes such as indium tin oxide (ITO), calcium and others. This feature provides low cost of fabrication and exible devices. The charge injection in the PLECs is facilitated by the action of ionic species, which are inserted in the polymeric material by adding a salt. This thesis treats with a controversy related to transport phenomena along the bulk of the device. Currently, there is two opposite models. One that considers that transport is driven by diffusion mechanism; and the other takes into account the formation of a PIN junction (p-type semiconductor insulating layer n-type semiconductor). Here, we proposed the fabrication and characterization of PLECs having different compositions and thickness, and the results were faced up to the models. We showed the existence of critical concentration of salt, below of which the operation of the PLECs are mainly due to injection stimulated by the ionic double-layer. For higher applied voltages, the injection still exists but it is followed by a PIN junction formation. We also verified that for voltages above the turn-on the device electrical resistance is proportional to the sample thickness and is practically temperature-independent. Our results showed that for low voltages the transport is dominated by diffusion, but as the voltage increases, the semiconducting layer starts to be doped: p-type in one side, and n-type in the other. Therefore, the conductivity of the semiconducting layer increases, and it finalizes by the formation of the PIN junction. Finally, we showed that the double-layer characteristic does not depend on the electronic polymer, and that the value of the turn-on voltage is very close to that of the electronic gap of the forbidden band.

Abstract This thesis reports the investigation of color tuning of two types of organic light emitting devices, transistors (OLETs) and diodes (OLEDs). Voltage tunable two color light emission was demonstrated for OLETs. For OLEDs, two kinds of color tuning methods were presented. For these, color tuning was realized using thermal annealing which changes the light emission color of the devices permanently. The two color light emission of the OLETs, employing a three-layer heterostructure device configuration, occurs in red and green. The device structure was first utilized for producing red light emission originating from a light emission layer made of Alq3:DCM that was deposited between the hole and electron transport layers made of DH-4T and DFH-4T, respectively. After modifying the fabrication process in order to raise the device performance by acquiring smoother active layers green light could also be produced by the devices. Green light emission originated from the electron transport layer. This took place during the electron transport mode, while the red emission was apparent while hole transport was active. The color of the light emission was therefore demonstrated as being tunable by voltage. For OLEDs, devices with one active polymeric layer, undoped and doped, were investigated. The undoped OLEDs had the light emission layer made of blue light emitting polyfluorene PFO. The OLEDs suffered from keto-defects shifting their light emission color from blue to greenish shade, a common problem occurring in widely used blue light emitting polyfluorenes. The work conducted and reported in this thesis demonstrated that thermal annealing can be used for diminishing this undesired green emission. For the doped OLEDs with the light emission layer made of a PFO:F8BT blend, color tuning was realized using thermal annealing as well. As a result of exposure to thermal treatment, the light emission color of these devices which was green as fabricated was converted to white. The phenomenon behind this effect was explained by phase separation between the host and dopant polymers of the light emission layer. / Tiivistelmä Tässä väitöskirjatyössä tutkitaan orgaanisten valoa emittoivien transistoreiden (OLET) ja diodien (OLED) värinsäätöä. Työssä tehtiin kolmikerrosrakenteisia OLETeja, jotka kykenevät emittoimaan valoa kahdella värillä ja joiden emittointiväri on jännitesäädettävissä. OLEDien osalta toteutettiin kaksi erilaista värinsäätömenetelmää, joissa molemmissa hyödynnettiin kuumennusta pysyvän värinvaihdon aikaansaamiseksi. Tutkitut OLETit emittoivat punaista ja vihreää valoa. Aluksi tutkittiin vastaavia komponentteja, jotka emittoivat vain punaista valoa. Näissä komponenteissa punaisen valon tuotti keskimmäinen valoemitterinä toiminut kerros (Alq3:DCM), jonka ala- ja yläpuolella olivat aukko- ja elektronijohtavat kerrokset (DH-4T ja DFH-4T). Komponenteilla saatiin tuotettua myös vihreää valoa, kun valmistusprosessia kehitettiin tasaisempien aktiivisten materiaalikerrosten valmistamiseksi. Vihreän valon todettiin olevan elektronijohtavan kerroksen tuottamaa. Kaksiväriemittoiva OLET tuotti vihreää valoa ollessaan elektronijohtavassa tilassa, ja punaista valoa aukkojohtavassa tilassa, emittointivärin ollessa näin jännitesäädettävissä. Työssä tutkittujen OLEDien valon emittointi perustui polymeerikerrokseen, joka oli toisissa OLEDeissa seostamaton ja toisissa seostettu. Seostamattomien OLEDien aktiivinen kerros oli tehty sinistä valoa tuottavasta polyfluoreenista (PFO), jossa usein ilmenee keto-virheitä, joiden vuoksi PFO:sta tehtyjen OLEDien valo muuttuu sinisestä vihertäväksi. Työssä osoitettiin, että kuumennusta voidaan käyttää sinisen emittointivärin palauttamiseen. Seostettujen OLEDien (PFO:F8BT) osalta kuumennusta käytettiin komponenttien emittointivärin muuttamiseksi alkuperäisestä emittointiväristä vihreästä valkoiseksi. Tämä ilmiö selitettiin valoa emittoivan kerroksen polymeerien välisellä faasierkaantumisella.

Submitted by Nadir Basilio (nadirsb@uninove.br) on 2018-06-21T18:42:55Z No. of bitstreams: 1 Heliodora Leao Casalechi.pdf: 2679810 bytes, checksum: f981677bdc05834caca5e26029e42566 (MD5) / Made available in DSpace on 2018-06-21T18:42:55Z (GMT). No. of bitstreams: 1 Heliodora Leao Casalechi.pdf: 2679810 bytes, checksum: f981677bdc05834caca5e26029e42566 (MD5) Previous issue date: 2015-06-24 / Tendinitis is a common disorder of the musculoskeletal system with multiple pathological manifestations. Although most tendons have the ability to spontaneously repair after injury, scar tissue is formed that can prevent the tendon to perform normal functions. Studies have been conducted using phototherapy in different health areas, using low-intensity lasers and LEDs. However, there are few studies with LEDs therapy. The aim of this study was to investigate the effect of phototherapy with Laser (830nm) and LED (945nm) in the repair process of the calcaneus tendonitis in rats. The inflammation was induced by controlled contusion in the medial region of the Achilles tendon of the animals. Was used 112 young male Wistar rats (240 ± 20g), divided into 14 groups with two different experimental periods. Groups CONT (control group), TEND (tendinitis group) during periods 7 and 14 days, LEDT (LED therapy, from th to 7th day and from 1th to 14th day), and LEDT delay (LED therapy from 7th to 14th day). The therapy was initiated 12h after the tendinitis induction, with a 48h interval between irradiations (dose 6J/point). The control animals received simulation of treatment; the same experimental design was used for Laser treatment. All groups were euthanized on the 7th or 14th day after the induction. The tendons were dissected, extracted, and sent for analysis. Were performed biomechanical and histological analysis to evaluate neutrophils and collagen, were also quantitated the inflammatory mediators by real-time polymerase chain reaction (RT-PCR) and the IL-6 and TNF- α levels by ELISA. The results showed that treatments with low-intensity lasers in the parameters used and the times studied reduces migration of inflammatory cells and improves the quality of repair, but the LED even decreasing the inflammation was not effective of biomechanical properties of tendon tissue. / A tendinite é uma desordem comum do sistema musculoesquelético. Embora os tendões tenham habilidade de reparação espontânea após ferimento, o tecido da cicatrização que é formado pode impedir o tendão de executar as funções normais. Estudos vêm sendo realizados utilizando a fototerapia em diferentes áreas da saúde, empregando tanto laseres quanto LEDs de baixa intensidade. Contudo, existe um número reduzido de estudos com a utilização da terapia com LEDs. O objetivo deste estudo foi investigar os efeitos anti-inflamatórios e as propriedades mecânicas do tecido após a ação da fototerapia utilizando LASER (830nm) e LEDs (945nm), na região do infravermelho, na tendinite induzida por trauma mecânico em tendão de Aquiles de ratos. Foram utilizados 112 ratos machos albinos da linhagem Wistar (240 ± 20g), distribuídos em 14 grupos e dois períodos experimentais diferentes. Grupos CONT (grupo controle), os grupos TEND (grupos tendinite) nos períodos de 7 e 14 dias, o LEDT (grupos terapia LED), do 1º ao 7º dia e do 1º ao 14º dia) e o grupo LEDT delay (terapia LED do 7º ao 14º dia). A terapia teve início 12 horas após a indução da tendinite, utilizando uma dose de 6J no ponto de aplicação, com intervalos de 48 em 48 horas. A fototerapia foi aplicada transcutaneamente em um único ponto sobre a região lesionada. Os animais dos grupos controle foram submetidos à simulação da aplicação com o aparelho desligado, o mesmo desenho experimental foi utilizado feito para o tratamento Laser. As eutanásias ocorreram ao 7º e 14º dia do experimento. Foi realizada análise biomecânica, histopatológica para avaliação de neutrófilos e colágeno, também foram quantificados os mediadores inflamatórios por meio da RT-PCR e os níveis de IL-6 e TNF- α foram avaliados pelo teste imunoenzimático (ELISA). Por meio dos resultados encontrados, é possível inferir que os tratamentos com Laser de baixa intensidade, nos parâmetros utilizados e nos tempos estudados melhora a qualidade do reparo do tecido tendíneo, a biomecânica e reduz a migração de células inflamatórias, já o LED de baixa intensidade apesar de diminuir a inflamação não foi eficiente na manutenção da biomecânica do tendão.

This thesis focuses mainly on the techniques to achieve high-performance top-emitting OLEDs, regarding device efficiency and lifetime for both non-inverted and inverted structures. It is thus organized as follows: In Chapter 2, the basic physics of organic semiconductor materials are reviewed, including the electronic properties of organic semiconductor materials, molecular excitations and their electronic transitions etc., which are believed to be critical for understanding of the work. Then, the general device physics of OLEDs are reviewed in detail, which includes almost every important electrical and optical process involved in the device. Finally, techniques and methods used to improve the device performance are summarized, which includes electrical doping of charge carrier transport layers. In Chapter 3, all organic materials, experimental techniques, and characterization methods used in this study are briefly described. In the following Chapter 4, techniques that are used for device optimization of non-inverted top-emitting OLEDs are discussed. Also, the mechanism of light outcoupling enhancement by a capping layer is discussed there. In the last part of Chapter 4, the influence of the optical device structure on the intrinsic quantum yield of the emitters is studied. Chapter 5 is focused on inverted top-emitting OLEDs, which are believed to be better applicable with current mainstream n-type amorphous silicon thin film transistor (TFT) technology. In this Chapter, the organic/metal and metal/organic interfaces are investigated in detail and their influence on device performance is discussed. In Chapter 6, the degradation of top-emitting OLEDs is studied, with a focus on the influence of electrode material and electrode thickness on the lifetime of top-emitting devices.

In this study, the design and fabrication of a monolithic InP-based 1550-nm photonic-crystal surfaceemitting laser (PCSEL) is reported. The device is composed by an InGaAsP multi-quantum well (MQW) active layer and InP photonic crystal (PhC) formed by metal organic chemical vapour deposition (MOCVD). A theoretical study based mainly on the Fourier modal method using Stanford Stratified Structure Solver (S 4) and finite element analysis using COMSOL Multiphysics was carried out in order to optimize the emission at 1550 nm due to the two-dimensional band-edge resonance effect at the Γ point.The device design and modeling, materials testing (annealing and MOCVD regrowth), process optimization and the fabrication of light emitting diodes (LEDs) based on the same structure as the PCSELs (without the PhC) is reported. The fabricated devices show a low series resistance of 8.19 Ω and a turn-on voltage of 0.84 V. The average differential output power is 41 mW/A with an electroluminescent peak at 1511 nm. The full assembly of the final PCSEL devices is beyond the scope of the present thesis and corresponds to an ongoing project expected to be finalized within the coming year. However, detailed guidelines and fabrication instructions, including the manufacturing of an appropriate lithographic mask set, are provided. / Föreliggande examensarbete rapporterar designen och tillverkningsprocessen för en monolitisk InPbaserad 1550-nm så kallad Photonic-Crystal Surface-Emitting Laser (PCSEL). Komponenten bestå r av en aktiv kvantbrunnsstruktur i InGaAsP och ett fotoniskt-kristall (PhC)-lager i InP, bägge odlade med hjälp av metalorganisk gasfasepitaxi (MOCVD). En teoretisk studie baserad på Fourier-modalmetoden med användning av Stanford Stratified Structure Solver (S4) och finit elementanalys-metoden med med hjälp av av COMSOL Multiphysics utfördes för att optimera emissionen vid 1550 nm genom en tvådimensionell bandkantsresonanseffekt vid Γ punkten.Rapporten går igenom komponentdesign och modellering, materialtestning (värmebehandling och MOCVDåterväxt), processoptimering och tillverkning av lysdioder (LED) baserade på samma struktur som PCSELkomponenterna (men utan PhC-strukturering). De tillverkade lysdioderna uppvisar en låg serieresistans på 8.19 Ω och en framspänning på 0.84 V. Den genomsnittliga differentiella utgångseffekten är 41 mW/A med en luminescenstopp vid 1511 nm. Den slutliga tillverkningen av färdiga PCSEL-enheter ligger utanför ramen för detta examensarbete och motsvarar istället ett pågående projekt som förväntas bli slutfört inom det kommande året. Däremot ges detaljerade riktlinjer och tillverkningsinstruktioner, för vilket ett fotolitografiskt mask-set även tagits fram.