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<p>As the miniaturization of the transistors in integrated circuits approaches the atomic scale limit, novel materials with exceptional performance are desired. Moreover, to conduct enough current with an ultrathin and small-scale body, high drain current density is preferably required. Nevertheless, devices may suffer seriously from self-heating effect (SHE) with high drain bias and current if the generated heat cannot be dissipated efficiently. In this thesis, we introduce two material systems and several techniques to accomplish the demand without SHE. Tellurium, as a van der Waals material composed by atomic helical chains, is able to realize its one-dimensional structure. We illustrate that the cross-sectional current density of 150 MA/cm2 is achieved through boron nitride nanotube (BNNT) encapsulation without SHE due to the superior thermal conductivity of BN. With the nanotube encapsulation technique applied, one-dimensional tellurium nanowire transistors with diameter down to 2 nm are realized as well, and single tellurium atomic chain is isolated. Furthermore, atomic-layer-deposited indium oxide (In2O3) as thin-film transistors exhibit even better current carrying capacity. Through co-optimization of their electrical and thermal performance, drain current up to 4.3 mA/μm is achieved with a 1.9-nm-thick body without SHE. The alleviation of SHE is due to a) the high thermal conductivity of the substrate assisting on efficiently dissipating the generated thermal energy, b) SHE avoidance with short-pulse measurement, and c) interface engineering between the channel stack and the substrate. These two material systems may be the solid solution to the desire of high current density transistors in the post-Moore era.</p>

Atomic Layer Deposition (ALD) of Al2O3 on tall multiwalled carbon nanotube forests shows concentration variation with the depth in the form of discrete steps. While ALD is capable of extremely conformal deposition in high aspect ratio structures, decreasing penetration depth has been observed over multiple thermal ALD cycles on 1.3 mm tall multiwalled carbon nanotube forests. SEM imaging with Energy Dispersive X-ray Spectroscopy elemental analysis shows steps of decreasing intensity corresponding to decreasing concentrations of Al2O3. A study of these steps suggests that they are produced by a combination of diffusion limited delivery of precursors with increasing precursor adsorption site density as discrete nuclei grow during the ALD process. This conceptual model has been applied to modify literature models for ALD penetration on high aspect ratio structures, allowing several parameters to be extracted from the experimental data. The Knudsen diffusion constant for trimethylaluminum (TMA) in these carbon nanotube forests has been found to be 0.3 cm2s-1. From the profile of the Al2O3 concentration at the steps, the sticking coefficient of TMA on Al2O3 was found to be 0.003.

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The unprecedented ability of plasmonic metal nano-structures to concentrate light into deep-subwavelength volumes has propelled their use in a vast array of nanophotonics technologies and research endeavors. They are used in sensing, super-resolution imaging, SPP lithography, SPP assisted absorption, SPP-based antennas, light manipulation, etc. To take full advantage of the attractive capabilities of CMOS compatible low-cost plasmonic structures based on Al and Cu, nanolaminate coatings are investigated to improve their long-term stability in corrosive physiological environments. The structures are fabricated using phase-shifting PDMS masks, e-beam deposition, RIE, Atomic Layer Deposition and Rapid Thermal Annealing. An alternate approach using Nanosphere Lithography (NSL) was also investigated. Films were examined using ellipsometry, atomic force microscopy and transmission measurements. Accelerated in-situ tests of Hafnium Oxide/Aluminum Oxide nanolaminate shells in a mildly pH environment with temperatures akin to physiological environments emulated using PBS show greatly enhanced endurance, with stable structures that last for more than one year. / Master of Science

L'optomécanique est la science des interactions entre la lumière et les mouvements mécaniques. Ce rapport de thèse décrit des expériences réalisées avec des microdisques fabriqué dans différents résonateurs semi-conducteurs III-V: l'Arséniure de Gallium (GaAs), l'Arséniure d'Aluminium Gallium (AlGaAs) et l'Arséniure d'Indium Phosphide (InGaP). Ces matériaux sont compatibles avec les fonctionnalités de l’optoélectronique et procurent un couplage optomécanique géant. Pour améliorer les performances des résonateurs en GaAs, nous avons développé des méthodes de traitement de surface permettant de réduire la dissipation optique par un facteur dix et ainsi d'atteindre un facteur de qualité de six millions. En plus de ces études sur le GaAs, nous avons réalisés une étude comparative des interactions optomecaniques dans des microdisques d'InGaP et d'AlGaAs, et nous avons mis en évidences leurs résonances optomécaniques. Finalement, nous avons réalisé des mesures de force avec des résonateurs en GaAs, démontrant un nouveau principe de détection basé sur notre étude de leur la trajectoire dans l'espace de phase et leur bruit de phase / Optomechanics studies the interaction between light and mechanical motion. This PhD thesis reports on optomechanical experiments carried with miniature disk resonators fabricated out of distinct III-V semiconductors: Gallium Arsenide (GaAs), Aluminium Gallium Arsenide (AlGaAs) and Indium Gallium Phosphide (InGaP). These materials are compliant with optoelectronics functionalities and provide giant optomechanical coupling. In order to boost performances of GaAs resonators, we implemented surface control techniques and obtained a ten-fold reduction of optical dissipation, attaining a Q of six million. On top of GaAs, we performed a comparative investigation of optomechanical interactions in InGaP and AlGaAs disk resonators, and demonstrated their operation as optomechanical oscillators. Finally, we carried out optomechanical force sensing experiments with GaAs resonators, analyzing a new sensing principle in light of the phase space trajectory and phase noise of the corresponding oscillators

L'introduction du transistor à un électron (SET) a secoué l'industrie des semi-conducteurs, avec des promesses d'efficacité inégalée. Cependant, le coût et la complexité associés à la réalisation d'un fonctionnement stable ont fortement entravé leur adoption. Après être tombé en dehors des grâces de l'industrie, la recherche universitaire a continué à pousser, démontrant des techniques novatrices pour la création de SET. Au cœur de ce problème de stabilité, il y a le besoin de construire de manière contrôlable des nanoislands de moins de 10 nm. Parmi les méthodes disponibles pour cette formation nanoisland, le dépôt de couche atomique (ALD) se distingue comme un processus hautement contrôlable industriellement. La deuxième barrière à l'entrée est la création d'électrodes nanogap, utilisées pour injecter du courant à travers ces nanoislands, pour lesquelles les chercheurs se sont largement appuyés sur des techniques de fabrication non évolutives comme la lithographie par faisceau d'électrons et le faisceau ionique focalisé. La technique d'évaporation de bord d'ombre surmonte les problèmes de complexité et d'échelle de la fabrication de nanogap, ouvrant de nouvelles possibilités. Dans ce travail, ALD sera démontré comme une superbe technique pour la culture de vastes réseaux 3D de nanoparticules de platine sous 2nm encapsulées dans Al2O3. ALD a fourni un moyen de faire croître ces matrices de nanoparticules en un seul processus, sous vide et à basse température. Grâce à l'évaporation du bord d'ombre, la lithographie UV a ensuite été utilisée pour former des électrodes nanogap avec des largeurs latérales élevées (100μm), avec des écarts démontrés au-dessous de 7 nm. La combinaison de ces techniques aboutit à un procédé de fabrication à haut rendement et à faible besoin pour la construction de SET complets. A partir des transistors résultants, de fines lamelles ont été préparées à l'aide de FIB et des modèles 3D ont été reconstruits par tomographie TEM pour analyse. La caractérisation électrique a été effectuée jusqu'à 77K, avec une modélisation révélant le transport de Poole-Frenkel en parallèle à un éventuel cotunneling. Des blocus de Coulomb stables, la signature des SET, ont été observés avec une périodicité régulière et étaient identifiables jusqu'à 170K. L'optimisation de ce processus pourrait produire des SETs de surface élevée capables de fonctionner de manière stable à température ambiante. / The introduction of the single electron transistor (SET) shook the semiconductor industry, with promises of unrivaled efficiency. However, the cost and complexity associated with achieving stable operation have heavily hindered their adoption. Having fallen out of the graces of industry, academic research has continued to push, demonstrating novel techniques for SET creation. At the core of this stability issue is a need to controllably build nanoislands smaller than 10nm. Among the methods available for this nanoisland formation, atomic layer deposition (ALD) sets itself apart as an industrially scalable, highly controllable process. The second barrier to entry is the creation of nanogap electrodes, used to inject current through these nanoislands, for which researchers have leaned heavily on non-scalable fabrication techniques such as electron beam lithography and focused ion beam. The shadow edge evaporation technique overcomes the complexity and scaling issues of nanogap fabrication, opening new possibilities. In this work, ALD will be demonstrated as a superb technique for growing vast 3D arrays of sub 2nm platinum nanoparticles encapsulated in Al2O3. ALD provided a means of growing these nanoparticle matrices in a single process, under vacuum, and at low temperatures. Through shadow edge evaporation, UV lithography was then utilized to form nanogap electrodes with high lateral widths (100µm), with gaps demonstrated below 7nm. The combination of these techniques results in a high yield, low requirement fabrication process for building full SETs. From the resulting transistors, thin lamellas were prepared using FIB and 3D models were reconstructed via TEM tomography for analysis. Electrical characterization was performed down to 77K, with modeling revealing Poole-Frenkel transport alongside possible cotunneling. Stable Coulomb blockades, the signature of SETs, were observed with regular periodicity and were identifiable up to 170K. Optimization of this process could yield high surface area SETs capable of stable operation at room temperature.

This dissertation presents a fibre-optic sensing approach to provide continuous measurements of CO2 concentration at discrete points under typical conditions of geological CO2 storage. Carbon capture and storage is considered to have potential for a large-scale reduction in CO2 emissions in a relatively short period of time while other solutions to replace fossil fuels are being investigated. One significant drawback of carbon capture and storage is the possibility of long-term CO2 leakage. Therefore, the development of reliable technology for monitoring, verification, and accounting of geological CO2 storage is critical to fulfill safety regulations and achieve public acceptance. The major limitations of current technology include relatively low resolutions, high costs, and the lack of continuous monitoring for long periods of time. To address these limitations, two types of fibre-optic sensors are investigated, namely long period gratings and Mach-Zehnder interferometers. The sensing principle for CO2 detection is based on the sensitivity of these sensors to the refractive index of the medium that surrounds the fibre. Fibre-optic sensors are attractive for downhole applications due to the possibility of fabricating inexpensive high resolution devices that are able to operate in harsh environments over long periods of time. This dissertation focuses on increasing the refractive index sensitivity of long period gratings and Mach-Zehnder interferometers by applying coatings that have a high refractive index. The dip-coating method is used to coat long period gratings with polystyrene, and the sensitivity at low refractive indices is increased by tuning coating thickness. The results show that long period gratings coated with polystyrene are able to detect CO2 in gaseous and aqueous media. This work reports the first measurement of CO2 dissolution in water at high pressure with a fibre-optic sensor. Additionally, atomic layer deposition is investigated to coat long period gratings and Mach-Zehnder interferometers with hafnium oxide. The study of this coating technique aims to address the main limitation of the dip-coating method: the challenge to achieve precise control over coating thickness. The results show that atomic layer deposition is suitable to maximize the sensitivity of long period gratings and Mach-Zehnder interferometers at a target refractive index. / Graduate / 0548 / 0752 / 0799 / luismelo@uvic.ca

The work investigates the selective deposition of cobalt oxide via atomic layer deposition. Methoxysilanes chlorosilane and poly(trimethylsilylstyrene) self-assembled monolayers are utilized to prevent wetting of water and cobalt bis(N-tert butyl, N'-ethylpropionamidinate) from the substrate, thereby controlling nucleation on the substrate and providing a pathway to enable selective deposition of cobalt oxide. Sr and Al are deposited atop the oxide films to scavenge oxygen and yield carbon-free cobalt metal films. Thermal reduction of the oxide layer in the presence of CO and H 2 was also investigated as an alternative. Finally, we demonstrate control over the tunability of the coercivity of the resultant films by controlling the reduction conditions.

Thin films are an enabling technology for a wide range of applications, from microprocessors to diffusion barriers. Nanolaminate thin films combine two (or more) materials in a layered structure to achieve performance that neither film could provide on its own. Atomic layer deposition (ALD) is a chemical vapor deposition technique in which film growth occurs through self limiting surface reactions. The atomic scale control of ALD is well suited for producing nanolaminate thin films. In this thesis, ALD of two nanolaminate systems will be investigated: Al₂O₃-Ta₂O₅ and ZnO-SnO₂. Al₂O₃ and Ta₂O₅ are high κ dielectrics that find application as gate oxides for field effect devices such as metal oxide semiconductor field effect transistors and thin film transistors. Al₂O₃-Ta₂O₅ nanolaminate films of a fixed composition and total thickness, but with varied laminate structures, were produced to explore the influence of layer thickness on dielectric behavior. Layer thickness was found to have little impact on the dielectric constant but a strong impact on the leakage current. Thick layered nanolaminates (with 2.5 to 10 nm layers) performed better than either pure material. Showing structure provides a means of tailoring nanolaminate properties. ZnSnO is an amorphous oxide semiconductor used to make transparent TFTs. Although ALD is naturally suited to the production of nanolaminates, the deposition of homogenous ternary compounds is still uncommon. For very thin depositions, nucleation behavior can dominate, resulting in ALD growth rates different than for thicker films. Initial work on ALD of the ZnO-SnO₂ system is presented, focusing on nucleation and growth of each material on the other. It was found that both ZnO and SnO₂ inhibit the growth of one another and a method was developed to characterize the average growth rate for few cycle depositions. / Graduation date: 2011