Analogcircuit/IC design for high speed optical fiber communication is a fairly new research area in Dr. Ha's group. In the first project sponsored by ETRI (Electronics and Telecommunication Research Institute) we started to design the building blocks of receiver for next generation 400 Gb/s optical fiber communication. In this thesis research a transceiver architecture based on 4x100 Gb/s parallel communication is proposed. As part of the receiver, a transimpedance amplifier for 100 Gb/s optical communication is designed, analyzed and simulated. Simulation results demonstrate the excellent feasibility of proposed architecture. Bipolar technology based on III-V materials (e.g. - GaAs, InP based HBT, HEMT) has always dominated the high speed optical transceiver design because of their inherent properties of high mobility and low noise. But they are power hungry and bulky in size which made them less attractive for highly integrated circuit design. On the contrary, CMOS technology always drew attraction because of low cost, low power dissipation and high level of integration facility. But their notorious parasitic characteristic and inferior noise performance makes high speed transceiver design very challenging. The emergence of nano-scale CMOS offer highly scaled feature sized transistors with transition frequencies exceeding 200 GHz and can improve optical receiver performance significantly. Increasing bandwidth to meet the target data rate is the most challenging task of TIA design especially in CMOS technology. Several CMOS TIA architectures have been published recently [6]-[11] for 40 Gb/s data rate having bandwidth no more than 40 GHz. In contrast to existing works, the goal of this research is to step further and design a single channel stand-alone TIA compatible in serial 100 Gb/s data rate with enhanced bandwidth and optimized transimpedance gain, input referred noise and group delay variation. A 100 Gb/s transimpedance amplifier (TIA) for optical receiver front end is designed in this work. To achieve wide bandwidth and low group delay variation a differential TIA with active feedback network is proposed. Proposed design also combines regulated cascode front end, peaking inductors and capacitive degeneration to have wide band response. Simulation results show 70 GHz bandwidth, 42 dBΩ transimpedance gain and 2.8 ps of group delay variation for proposed architecture. Input referred noise current density is 26 pA/â while the total power dissipation from 1.2V supply is 24mW. Performance of the proposed TIA is compared with other existing TIAs, and the proposed TIA shows significant improvement in bandwidth and group delay variation compared to other existing TIA architectures. / Master of Science

Radiometers measures background radiation noise power of a target. The dominant quality factor of the radiometer is determined by how sensitive it is, so the lower the noise figure and the higher the gain, the more sensitive it is. It must also calibrate out any interfering noise such as sky background and system noise. Any change in gain of the radiometer receiver must also be taken into account. A Dicke radiometer compensates system gain and noise variation by switching between the target and a known noise source. To accomplish this, a single pole, double throw (SPDT) switch, switches between the receiving antenna and the noise source. The common terminal of the switch goes to the input of the low noise amplifier (LNA). This switch has a noise figure approximately equivalent to its loss and its noise is amplified by the LNA. To eliminate the loss of the switch, this paper studies a new approach of combining the switch and the LNA to become a “switchable” LNA by designing a two-stage gain block with the first stage capable of switching between the two inputs. Because the first stage is amplifying, there is no signal loss. This thesis investigates the new switching LNA and the design approach used in choosing the technology, the transistor size, biasing, extractions and matching. Two variations of the design were built using IBM’s SiGe 8HP 120nm process. The expected and measured results are compared. Results show a measured gain of 10dB and noise figure of 5dB at 19GHz. These results fall short of expectations for reasons explained in the thesis. The overall performance of this switching LNA is compared to the traditional methods. Performance criteria include gain, noise figure, isolation, matching and linearity vs. frequency and their stability vs. power and temperature variation. Power consumption, physical size and cost are also considered. The degree to which the two inputs track one another is discussed.

"A Low Noise Amplifier (LNA) is an important building block in the RF receiver chain. Typically the LNA should provide acceptable gain and high linearity while maintaining low noise and power consumption. To optimize these conflicting goals the so-called Cascode topology is widely used in industry. Here the gain cell is comprised of two transistors, one in common-source and the other in common gate configuration. Cascode has a number of competitive advantages over other topologies such as high output impedance that shields the input device from voltage variations at the output, good reverse isolation resulting in improved stability, and acceptable input matching. Moreover, the topology features excellent frequency characteristics. Unfortunately, a Cascode design is expensive to deploy in RF systems and it requires more careful tuning and matching. Since the design relies on many circuit components, optimization methods are generally difficult to implement and often inaccurate in their predictions. To overcome these problems, this thesis proposes a modeling environment within the Advanced Design Systems (ADS) simulator that utilized DC and RF measurements in an effort to characterize each transistor separately. The model creates an easy-to-apply design approach capable of predicting the most important circuit components of the Cascode topology. The validity of the method is tested in ADS with a realistic p-HEMT library device. The comparison between model prediction and the realistic device involves both standard transistor parameters and high-frequency parasitic effects. "

Abstract Recently, the proliferating needs of high data rate communication systems are increasing the demand for higher frequency bands with broader bandwidth. The K-band (18~26.5 GHz), which include point to point communications (18~23 GHz), ISM band (24 GHz), and automotive radar applications (24 GHz and 22~29 GHz) is one of the most important frequency bands in modern wireless communication systems. This thesis mainly includes three parts. The first part of the thesis is the introduction to the principles and characteristics for active and passive components of CMOS process and the description of common transistors , such as BJT, CMOSFET, HBT and pHEMT. The principles of resistors, capacitors and inductors in simulations is shown. It is useful for the microwave circuit design to understand the structure and characteristics of active components and passive components in CMOS process. The second part describes the design principles and characteristics of power amplifier. The third part is the design and simulation of the 2 stages cascode configuration Class A power amplifier and the 3 stages cascode configuration Class A power amplifier with power combination. There are two important scaling trends that are making CMOS increasingly attractive for RF applications. One is the well known dramatic shrinkage of device size, so that transistors in the advanced process generation of CMOS have peak fT values in excess of 55 GHz.The other is the reverse scaling of interconnect. The thicker metal layer and more layers of wiring are enabling the realization of high-quality passive components which are critical for RF circuits. CMOS is the most attractive technology for its low cost, high yield and high level of integration. However, It is challenging to design a power amplifier with high output power. In the sub-micron CMOS technology, the challenges of CMOS power amplifier design include the low breakdown voltage, low transconductance (gm), and high substrate loss as compared with SiGe HBTs GaAs HBTs and InP-GaAs HBTs technologies. We made efforts in implementing a power amplifier at K-band. The design and simulation of two power amplifier is present. One is the 2 stages power amplifier, the other is the 3 stages power amplifier with power combination. In order to realize the inductive element and capacitive element in sub-milimeter wave or millimeter wave circuit design, the short stub microstrip line and open stub mircrostrip line are used in matching networks between all stages. The cascade configuration is effective structure to minimize Miller effect in high frequency. The peak gain of 2 stages power amplifier is 17 dB at 24 GHz and the saturation output power is 20 dBm. The OP1dB is over 16 dBm. The peak gain of 3 stages power amplifier with power combination is 20 dB at 24 GHz and the saturation output power is 20.5 dBm. The OP1dB is over 15 dBm.The power amplifier with the cascode configuration and power combination techniques is designed and simulated in TSMC 0.18 um CMOS process, which provides deep n-well, and MiM capacitors.

No description available.

Ultra-broadband Monolithic Microwave Integrated Circuit (MMIC) amplifiers find applications in multi-gigabit communication systems for 5G and millimeter wave measurement instrumentation systems. The aim of the research was to achieve maximum bandwidth of operation of the amplifier from the foundry process used and high reverse isolation ( < -25.0 dB) across the whole bandwidth. To achieve this, several design variations of DC - 110 GHzMMIC Cascode TravellingWave Amplifier (TWA) on 100 nm AlGaAs/GaAs pHEMT process were done for application in next generation instrumentation and high data transfer rate (100 Gb/s) optical modulator systems. The foundry service and device models used for the design are of the WINPP10-10 process from WIN Semiconductor Corp., Taiwan, a commercial and highly stable process. The cut-off frequency ft and maximum frequency of oscillation fmax for this process are 135 GHz and 185 GHz respectively. Thus, the design was aimed at pushing the ultimate limits of operation for this process. The design specifications were targeted to have S21 = 9.0 to 10.0 ± 1.0 dB, S11 & S22 ≤ -10.0 dB and S12 ≤ -25.0 dB in the whole frequency range. In order to achieve the targeted RF performance, it is imperative to have accurate transistor models over the frequency range of operation, transistor configuration mode and operating bias points. Using smaller periphery transistors results in lower extrinsic & intrinsic input and output capacitances that lead to achieving very wide band performance. Thus, device sizes as small as 2x10 μm were used for the design. A cascode topology, which is a series connection of a common-source and common-gate field effect transistor (FET), was used to achieve large bandwidth of operation, high reverse isolation and high input and output impedance. Using very small periphery devices at cascode bias points posed limitation in the design in terms of accuracy of transistor models under these conditions, specifically at high frequencies i.e., above 50 GHz. One of the major systemrequirements for the application of MMIC ultra-broadband amplifiers in instrumentation is to achieve and maintain high reverse isolation (≤ -25.0 dB) over the whole frequency range of operation which cannot be achieved alone by the cascode topology and new design techniques have to be devised. These twomajor challenges, namely high frequency small periphery FET model modification & development and design technique to achieve high reverse isolation in ultra-broadband frequency range have been addressed in this research.

The majority of signals, that need to be processed, are analog, which are continuous and can take an infinite number of values at any time instant. Precision of the analog signals are limited due to influence of distortion which leads to the use of digital signals for better performance and cost. Analog to Digital Converter (ADC), converts the continuous time signal to the discrete time signal. Most A/D converters are classified into two categories according to their sampling technique: nyquist rate ADC and oversampled ADC. The nyquist rate ADC operates at the sample frequency equal to twice the base-band frequency, whereas the oversampled ADC operates at the sample frequency greater than the nyquist frequency. The sigma delta ADC using the oversampling technique provides high resolution, low to medium speed, relaxed anti-aliasing requirements and various options for reconfiguration. On the contrary, resolution of the sigma delta ADC can be traded for high speed operation. Data sampling techniques plays a vital role in the sigma delta modulator and can be classified into discrete time sampling and continuous time sampling. Furthermore, the discrete time sampling technique can be implemented using the switched-capacitor (SC) integrator and the switched-current (SI) integrator circuits. The SC integrator technique provides high accuracy but occupies a larger area. Unlike the SC integrator, the SI integrator offers low input impedance and parasitic capacitance. This makes the SI integrator suitable for low supply voltage and high frequency applications. From a detailed literature study on the multi-bit sigma delta modulator, it is analyzed that, theneeds a highly linear digital to analogue converter (DAC) in its feedback path. The sigma delta modulators are very sensitive to linearity of the DAC which can degrade the performance without any attenuation. For this purpose T.C. Leslie and B. Singh proposed a Hybrid architecture using the multi-bit quantizer with a single bit DAC. The most significant bit is fed back to the DAC while the least significant bits are omitted. This omission requires a complex digital calibration to complete the analog to digital conversion process which is a small price to pay compared to the linearity requirements of the DAC. This project work describes the design of High-Speed Hybrid Current modeModulator with a single bit feedback DAC at the speed of 2.56GHz in a state-of-the-art 65 nm CMOS process. It comprises of both the analog and digital processing blocks, using T.C. Leslie and B. Singh architecture with the switched current integrator data sampling technique for low voltage, high speed operation. The whole system is verified mathematically in matlab and implemented using signal flow graphs and verilog a code. The analog blocks like switched current integrator, flash ADC and DAC are implemented in transistor level using a 65 nm CMOS technology and the functionality of each block is verified. Dynamic performance parameters such as SNR, SNDR and SFDR for different levels of abstraction matches the mathematical model performance characteristics.

No description available.

Analog-to-digital converters are inevitable in the modern communication systems and there is always a need for the design of low-power converters. There are different A/D architectures to achieve medium resolution at medium speeds and among all those Cyclic/Algorithmic structure stands out due to its low hardware complexity and less die area costs. This thesis aims at discussing the ongoing trend in Cyclic/Algorithmic ADCs and their functionality. Some design techniques are studied on how to implement low power high resolution A/D converters. Also, non-ideal effects of SC implementation for Cyclic A/D converters are explored. Two kinds of Cyclic A/D architectures are compared. One is the conventional Cyclic ADC with RSD technique and the other is Cyclic ADC with Correlated Level Shift (CLS) technique. This ADC is a part of IMST Design + Systems International GmbH project work and was designed and simulated at IMST GmbH. This thesis presents the design of a 12-bit, 1 Msps, Cyclic/Algorithmic Analog-to-Digital Converter (ADC) using the “Redundant Signed Digit (RSD)” algorithm or 1.5-bit/stage architecture with switched-capacitor (SC) implementation. The design was carried out in 130nm CMOS process with a 1.5 V power supply. This ADC dissipates a power of 1.6  mW when run at full speed and works for full-scale input dynamic range. The op-amp used in the Cyclic ADC is a two-stage folded cascode structure with Class A output stage. This op-amp in typical corner dissipates 631 uW power at 1.5 V power supply and achieves a gain of 77 dB with a phase margin of 64° and a GBW of 54 MHz at 2 pF load.

This thesis addresses the potential of implementing watt-level class-AB Power Amplifier (PA) for WLAN in 65 nm CMOS technology, at 2.4 GHz frequency. In total, five PAs have been compared, where the examined parameters were output power (Pout), linearity, power added efficiency (PAE), and area consumption. Four PAs were implemented using conventional cascode topology with different combination of transistors sizes in 65nm CMOS, and one PA using a high-voltage Extended Drain MOS (EDMOS) device, implemented in the same 65 nm CMOS with no process or mask changes. All schematics were created using Cadence Virtuoso CAD tools. The test benches were created using the Agilent's Advance Design System ( ADS) and simulated with the ADS-Cadence dynamic link. The simulation results show that the EDMOS PA (L=350 nm) has the smallest area, but has harder to reach the required Pout. Cascode no. 3 (L= 500,260 nm) has the best Pout (29.1 dBm) and PAE (49.5 %). Cascode no. 2 (L= 500,350 nm) has the best linearity (low EVM). Cascode no. 1 (L=500,500 nm) has low Pout (27.7 dBm). Cascode no.4 (L=500,60 nm) has very bad linearity. The thesis also gives an overview for CMOS technology, discusses the most important aspects in RF PAs design, such as Pout, PAE, gain, and matching networks. Different PA classes are also discussed in this thesis.