The persistence of biofilms in hospital settings are associated with Healthcare Associated Infections (HCAI), causing increased morbidity, mortality and healthcare costs. The resistance of biofilms against commonly used hospital disinfectants has been well reported. Metal and metal oxide nanoparticles (NP) such as silver (Ag), copper (Cu), zinc oxide (ZnO) and copper oxide (CuO) exhibit antimicrobial properties against various pathogens. Methods: Biofilm formation of Pseudomonas aeruginosa and Staphylococcus aureus in a Centre for Disease Control (CDC) biofilm reactor and a 96 well plate was compared. A three stage approach including Minimum Biofilm Reduction Concentration (MBRC), R2 values and log(10) reductions was used to assess the efficacy of Ag and ZnO NPs both alone and in combination against P. aeruginosa and S. aureus biofilms. Atomic Absorption Spectroscopy (AAS), Scanning Electron Microscopy (SEM) and Confocal Laser Scanning Microscopy (CLSM) was used to further assess the antimicrobial ability of the metal and metal oxide NPs. The prevention of P. aeruginosa and S. aureus adherence on Ag and ZnO thin film coating on silicon (Si) surfaces was also investigated, as well as icaC, ebpS and fnbB gene expression in S. aureus biofilms. Results: The CDC biofilm reactor demonstrated to be the most effective method for P. aeruginosa and S. aureus biofilm production in comparison to 96 well plates, with lower standard errors of the mean (SE) and higher replicability. Individual MBRC of ZnO and Ag NPs in suspension were 256 and 50 µg/ml for P. aeruginosa and 16 and 50 µg/ml for S. aureus respectively. The concentrations in combination were reduced by at least a half, with concentrations of 32/25 µg/ml of ZnO/Ag NPs in suspension resulting in a significant (p ≤0.05) reduction of 3.77 log(10) against P. aeruginosa biofilms and 8/12 µg/ml of ZnO/Ag NPs in suspension resulted in a 3.91 log(10) (p ≤0.05) against S. aureus biofilms. Both combinations showed an additive effect. Time point analysis confirmed that a 24 hour treatment is vital for any significant (p ≤0.05) antimicrobial activity. AAS data suggested that the Ag+ ions quenched Zn2+ ions, therefore the antimicrobial efficacy of the combination is mainly due to Ag+ ions. Damage of the biofilms from Ag and ZnO NPs was observed in the SEM imaging and energy dispersive X-ray (EDX) analysis confirmed the adherence of Zn and Ag within the biofilms. CLSM imaging showed dead (red) cells of P. aeruginosa and S. aureus biofilms throughout the depth of the biofilm. P. aeruginosa formation was reduced by 1.41 log(10) and 1.43 log(10) on Ag and ZnO thin film coatings respectively. For S. aureus, a reduction of 1.82 log(10) and 1.65 log(10) was obtained for Ag and ZnO coating respectively. Only low levels of ribonucleic acid (RNA) were achieved so no further gene analysis could occur. Conclusion: Reductions of ≥3 log(10) were observed for P. aeruginosa and S. aureus biofilm treatment with ZnO/Ag NP suspensions. It can be concluded that the ZnO/Ag NP suspensions had greater antimicrobial activity than Ag and ZnO coated surfaces owing to large concentrations of Ag+ and Zn2+ ions acting upon the biofilms. The slower release of ions from coated surfaces suggest an inadequate concentration of ions in the media, which are therefore unable to prevent biofilm formation as rapidly as NP suspensions, however provide a sustained release of ions over time. The results from this investigation propose that Ag and ZnO NPs in suspension could be a potential alternative to disinfectants for use in nosocomial environments against P. aeruginosa and S. aureus biofilms.

Des films minces d’oxydes de cuivre (Cu2O, Cu4O3 et CuO) ont été déposés à température ambiante sur des substrats en verre et en silicium par pulvérisation magnétron réactive. Une attention particulière a été portée à l’influence des conditions de synthèse (débit d’oxygène et pression totale) sur la structure et l’orientation préférentielle des dépôts. La pression totale est le paramètre principal influençant la texture des films de Cu2O et de Cu4O3. En revanche l’orientation préférentielle des films de CuO est contrôlée par le débit d’oxygène. Pour des films de Cu2O et de Cu4O3, un phénomène de croissance épitaxique locale (CEL) a été mis en évidence. Il résulte de l’utilisation d’une première couche qui joue le rôle d’une couche de germination lors du processus de croissance. Ainsi, les films peuvent croître avec une texture donnée indépendamment de leurs conditions de synthèse. Cet effet de CEL a été mis à profit pour élaborer des films biphasés (Cu2O + Cu4O3) qui présentent une microstructure originale. L’augmentation de la transmittance optique et du gap optique de films de Cu2O a été rendue possible par des traitements thermiques dans l’air qui permettent de diminuer la densité de défauts dans les films. Finalement, les propriétés optiques et la structure électronique des oxydes de cuivre qui ont été calculées par la méthode GW sont en accord avec des résultats expérimentaux obtenus par absorption optique, photoémission et spectroscopie de perte d’énergie des électrons. / Copper oxide (Cu2O, Cu4O3 and CuO) thin films have been deposited on unmatched substrates by sputtering at room temperature. The influence of oxygen flow rate and total pressure on the film structure and preferred orientation has been studied. The total pressure is a relevant parameter to control the texture of Cu2O and Cu4O3 films, while the oxygen flow rate is effective to tune the preferred orientation of CuO films. Local epitaxial growth, where epitaxial relationship exists in columns of sputtered films, has been observed in Cu2O and Cu4O3 films by using a seed layer. The seed layer will govern the growth orientation of top layer via the local epitaxy, independently of the deposition conditions of top layer. Unusual microstructure that both phases have the vertically aligned columnar growth has been evidenced in biphase Cu2O and Cu4O3, which may relate to the local epitaxial growth of Cu2O. The lower resistivity than that in single phase films has been observed in this biphase film. Annealing in air can increase the transmittance of Cu2O films in visible region by the reduction of the impurity scattering, while the optical band gap is enlarged due to the partial removal of defect band tail. The optical properties and electronic structure of copper oxides calculated by GW approach with an empirical on-site potential for Cu d orbital, are in good accordance with experimental results from optical absorption, photoemission and electron energy loss spectroscopies

[pt] A ustulação cloretante é um processo amplamente utilizado no âmbito da metalurgia extrativa, principalmente no que se diz respeito à obtenção de metais. Estudos demonstram que a partir de um agente cloretante gasoso e a incorporação no sistema de um agente redutor, tanto a cinética quanto a termodinâmica das reações são estimuladas. Neste contexto, compostos organoclorados, como CCl4 e C2Cl4, despontam como candidatos promissores à substituição do Cl2. O presente estudo realiza uma avaliação termodinâmica dos processos a partir de diagramas de especiação para o equilíbrio, assim como a modelagem de dados cinéticos associados à cloração do óxido de cobre (CuO - 923 K a 1173 K) e do pentóxido de tântalo (Ta2O5 - 1073 K a 1223 K), em atmosfera de C2Cl4 diluído em N2, mediante o emprego de equações já consolidadas no âmbito da modelagem de reações gás-sólido (núcleo não reagido, auto-catalítico e Avrami). Os modelos do núcleo não reagido com controle difusional pela camada de cinzas e controle químico, foram os dois que apresentaram ajustes de melhor qualidade. O modelo difusional apresentou energia de ativação global para o CuO de 71,5592 mais ou menos 10 kJ.mol(-1) e de 62,2606 mais ou menos 10 kJ.mol (-1) para o Ta2O5, enquanto que com controle químico, para o CuO, obteve-se o valor de 118,0049 mais ou menos 10 kJ.mol(-1) e para o Ta2O5 um valor de 119,131 mais ou menos 10 kJ.mol(-1). Valores consistentes com o que é apresentado na literatura, sendo superiores em modelos com premissa química do que em modelos difusionais. Aspectos físicos também foram considerados e mediante ao número de Reynolds encontrado (Re=0,26 – escoamento laminar), reforçou-se um controle de natureza mista possível para ambos os óxidos. / [en] Chloride roasting is a process widely used in the field of extractive metallurgy, especially with regard to obtaining metals. Studies show that from a gaseous chlorinating agent and the incorporation of a reducing agent in the system, both the kinetics and the thermodynamics of the reactions are stimulated. In this context, organochlorine compounds, such as CCl4 and C2Cl4, stand out as promising candidates for the replacement of Cl2. The present study performs a thermodynamic evaluation of the processes from speciation diagrams for equilibrium, as well as the modeling of kinetic data associated with the chlorination of copper oxide (CuO - 923 K to 1173 K) and tantalum pentoxide (Ta2O5 - 1073 K to 1223 K), in an atmosphere of C2Cl4 diluted in N2, using equations already consolidated in the context of gas-solid reaction modeling (shrinking core, auto-catalytic and Avrami). The models of the shrinking core with diffusional control by the ash layer and chemical control, were the two that presented better quality adjustments. The diffusional model showed global activation energy for the CuO of 71.5592 plus-minus 10 kJ.mol (-1) and 62.2606 plus-minus 10 kJ.mol (-1) for Ta2O5, while with chemical control, for CuO, 118.0049 plus-minus 10 kJ.mol (-1) was obtained and for Ta2O5 a value of 119,131 plus-minus 10 kJ.mol (-1). Values consistent with what is presented in the literature, being higher in models with chemical premise than in diffusion models. Physical aspects were also considered and, based on the Reynolds number found (Re = 0,26 - laminar flow), a control of mixed nature possible for both oxides was reinforced.

This poster was presented in the Materials for Advanced Metallization (MAM) 2014 Conference in Chemnitz, Germany. Abstract: Atomic Layer Deposition (ALD) has emerged as an ubiquitous method for the deposition of conformal and homogeneous ultra-thin films on complex topographies and large substrates in microelectronics. Electrochemical deposition (ECD) is the first choice for the deposition of copper (Cu) into the trenches and vias of the interconnect system for ULSI circuits. The ECD of Cu necessitates an electrically conductive seed layer for filling the interconnect structures. ALD is now considered as a solution for conformal deposition of Cu seed layers on very high aspect ratio (AR) structures also for technology nodes below 20 nm, since physical vapor deposition is not applicable for structures with high AR. Cu seed layer deposition by the reduction of Cu2O, which has been deposited from the Cu(I) β-diketonate precursor [(nBu3P)2Cu(acac)], has been successfully carried out on different substrates like Ta, TaN, SiO2, and Ru [1, 2]. However, still many questions are unanswered regarding the underlying surface chemistry of the precursor on many substrates, leading to different growth modes during ALD. In this work, the surface chemistry of [(nBu3P)2Cu(acac)] on SiO2 substrate is investigated by in-situ X-ray photoelectron spectroscopy (XPS), reporting vital information about the oxidation state and the atomic concentration after chemisorption on the substrates kept at different temperatures. The aim of the investigation is to understand the stepwise change in the precursor oxidation state with increasing substrate temperature and to identify the temperature limit for the thermal ALD with this Cu precursor on SiO2. For the experiments, the Cu precursor was evaporated on SiO2 substrates kept at temperatures between 22 °C and 300 °C. The measured C/Cu and P/Cu concentration indicated that most of the nBu3P ligands were released either in the gas phase or during adsorption (Fig. 1a). No disproportionation was observed for the Cu precursor in the temperature range between 22 °C and 145 °C. Similarly, in this temperature range the Auger parameter calculated from Cu 2p3/2 and Cu L3VV spectra was found to be 360.0±0.2 eV, comparable to Cu(I) oxidation state [3]. However, disproportionation of the Cu precursor was observed above 200 °C, since C/Cu concentration ratio decreased and substantial metallic Cu was present on the substrate. Hence, 145 °C is the temperature limit for the ALD of Cu2O from this precursor, as the precursor must not alter its chemical state after chemisorption on the substrate. 500 ALD cycles with the probed Cu precursor and wet O2 as co reactant were carried out on SiO2 at 145 °C. After ALD, in situ XPS analysis confirmed the presence of Cu2O on the substrate. Ex-situ spectroscopic ellipsometry indicated an average film thickness of 2.5 nm of Cu2O deposited with a growth per cycle of 0.05 Å/cycle, comparable to previous experiments. References: [1] T. Waechtler, S. Oswald, N. Roth, A. Jakob, H. Lang, R. Ecke, S. E. Schulz, T. Gessner, A. Moskvinova, S. Schulze, M. Hietschold, J. Electrochem. Soc., 156 (6), H453 (2009). [2] T. Waechtler, S. -F. Ding, L. Hofmann, R. Mothes, Q. Xie, S. Oswald, C. Detavernier, S. E. Schulz, X. -P. Qu, H. Lang, T. Gessner, Microelectron. Eng., 88, 684 (2011). [3] J. P. Espinós, J. Morales, A. Barranco, A. Caballero, J. P. Holgado, A. R. González Elipe, J. Phys. Chem. B, 106, 6921 (2002).

Matrix Assisted Laser Desorption Ionization Mass Spectrometry (MALDI-MS) är en effektiv metod för att analysera biomolekyler såsom proteiner. Metoden är utmärkt för kvalitativ analys, medan kvantitativ analys har utrymme för förbättringar. Detta projekt syftade till att undersöka inkorporering av Cu2O-partiklar (Cu2O PS) i en DHB-matris som ett sätt att förbättra kvantitativ analys av äggproteiner och peptider. För att göra detta syntetiserades Cu2O PS och olika utspädningar av partiklarna blandades i matrisen, och en hybridmatris (Cu2O PS@DHB) skapades. Syntesen utfördes tre gånger och resulterade i tre olika uppsättningar av partiklar som undersöktes med hjälp av UV/Vis och DLS. Prover med både DHB och Cu2O PS@DHB analyserades senare med MALDI-MS och resultaten visade att de syntetiserade Cu2O PS inte förbättrade den kvantitativa analysen, även om de mindre, gula partiklarna hade en bättre effekt än de större, orangea partiklarna. En intressant upptäckt gjordes under projektet beträffande Cu2O PS@DHB-matrisen. Vid förberedelse av Cu2O PS@DHB bör blandningen användas omedelbart efter förberedelsen, annars minskar kvalitén på MALDI-MS-spektrumen dramatiskt.

Το αντικείμενο της παρούσας Διδακτορικής Διατριβής είναι η ανάπτυξη και ο χαρακτηρισμός προηγμένων υλικών για εφαρμογές σε νανοδιατάξεις. Στα πλαίσια αυτής, επικεντρωθήκαμε στην ανάπτυξη και μελέτη μαγνητικών και ημιαγωγικών λεπτών υμενίων που βασίζονται σε οξείδια παραδοσιακών μετάλλων και ημιαγωγών. Ο μαγνητικός και οπτικός χαρακτηρισμός των υλικών αυτών υπό τη μορφή της νανοδομής του λεπτού υμενίου, αποκαλύπτουν νέες ιδιότητες με εξαιρετικά μεγάλο τεχνολογικό ενδιαφέρον. Πιο συγκεκριμένα, έγινε καταρχήν ανάπτυξη πολυστρωματικών μαγνητικών υμενίων Ni/NiO, μονοστρωματικών ημιαγωγικών υμενίων Cu2O, CuO και NiO, όπως επίσης και μονοστρωματικών άμορφων μονωτικών υμενίων SiOx με ή και χωρίς ενσωματωμένες κβαντικές τελείες Si. Για κάθε σειρά υμενίων από τις κατηγορίες αυτές, έγινε μελέτη των μαγνητικών ή/και των οπτικών τους ιδιοτήτων. Τα υμένια Ni/NiO αναπτύχθηκαν σε διαφορετικά υποστρώματα με τη χρήση μιας μόνο κεφαλής magnetron sputtering και της μεθόδου της φυσικής οξείδωσης. Η διαστρωμάτωση του υλικού και η επαναληψιμότητα της μεθόδου αποδείχθηκαν εξαιρετικής ποιότητας. Για υμένια Ni/NiO με διαφορετικό πάχος στρώματος Ni έγινε εκτεταμένη μελέτη της εξάρτησης της μαγνήτισης και της ανισοτροπίας από τη θερμοκρασία. Βρέθηκε ότι τα υμένια με λεπτά στρώματα Ni εμφανίζουν τάση για κάθετη μαγνητική ανισοτροπία, η οποία προέρχεται από την υπολογίσιμη θετική ανισοτροπία επιφανείας που επιδεικνύουν αυτά. Τα ημιαγωγικά υμένια οξειδίων του Cu και του Νi αναπτύχθηκαν μετά από οξείδωση υμενίων των αντίστοιχων μεταβατικών μετάλλων. Τα άμορφα μονωτικά υμένια SiOx αναπτύχθηκαν με τη τεχνική της “reactive” ιοντοβολής. Στη συνέχεια, μέρος αυτών οξειδώθηκε πλήρως μετά από θέρμανση σε θερμοκρασία 950 οC και σε περιβάλλον αέρα, ενώ κάποια άλλα υποβλήθηκαν σε θερμική αποσύνθεση μετά από θέρμανση σε συνθήκες κενού στους 1000 οC. Με τη διαδικασία της θερμικής αποσύνθεσης, όπως αποδεικνύουν και οι εικόνες ηλεκτρονικής μικροσκοπίας, σχηματίζονται νανοκρύσταλλοι Si ενσωματωμένοι σε άμορφη μήτρα οξειδίου του Si. Για τα υμένια των οξειδίων του Cu και του Ni μελετήθηκαν με τη χρήση της φασματοσκοπίας UV-VIS τα φαινόμενα κβαντικού περιορισμού που παρουσιάζουν αυτά. Βρέθηκε ότι σε κάθε περίπτωση εμφανίζεται μετατόπιση της ακμής απορρόφησης προς μεγαλύτερες ενέργειες, καθώς το πάχος του υμενίου μειώνεται και γίνεται συγκρίσιμο με την εξιτονική ακτίνα Bohr του αντίστοιχου υλικού. Τα υμένια SiOx βρέθηκε ότι μετά από τη διαδικασία της θερμικής τους αποσύνθεσης παρουσιάζουν φωτοφωταύγεια, η οποία προέρχεται από τις εξιτονικές επανασυνδέσεις στις κβαντικές τελείες Si που εμπεριέχονται σ’ αυτά. Από την εργασία στα πλαίσια αυτής της Διατριβής, διαπιστώνουμε ότι μπορούμε να μεταβάλλουμε τις ιδιότητες παραδοσιακών υλικών, όπως είναι για παράδειγμα τα μέταλλα, οι κλασσικοί ημιαγωγοί και τα οξείδια αυτών, όταν αυτά αναπτύσσονται υπό τη μορφή νανοδομών. Οι νανοδομές αυτές μπορεί να εμφανίζουν εξαιρετικό ενδιαφέρον για εφαρμογές σε νανοδιατάξεις με καινούργιες αλλά κι εντελώς ελεγχόμενες ιδιότητες. / The objective of this Thesis is the growth and the characterization of high tech materials which can be possible candidates for future applications in nanodevices. In the framework of the Thesis, we were mainly focused on the production and the study of magnetic and semiconducting thin films, which are based on oxides of metals and of conventional semiconductors. The magnetic and optical characterizations reveal that these materials, in the form of thin films exhibit new properties with exceptionally large technological interest. In more detail, magnetic Ni/NiO multilayers, semiconducting Cu2O, CuO and NiO thin films, as well as insulating amorphous SiOx thin films with or without embedded Si quantum dots, were produced. The magnetic and/or optical properties of each of the aforementioned thin film categories were studied and their impact on possible future applications was examined. The Ni/NiO multilayers were produced on various substrates with the aid of a single magnetron sputtering head and the natural oxidation process. The produced multilayers were of excellent layering and interface quality. An extended study of both the magnetization and the anisotropy as a function of the temperature and the varying Ni layer thickness was performed. It is found from the magnetic investigations, that the multilayers with thin Ni layers exhibit a trend for perpendicular magnetic anisotropy, which is attributed to the considerable positive surface anisotropy of the Ni/NiO interfaces. The semiconducting copper and nickel oxide thin films were produced via the oxidation of the corresponding metallic films. The amorphous SiOx films were fabricated via the reactive sputtering method. Part of the as deposited films was fully oxidized at 950 oC under the ambient air environment, whereas another part was thermally decomposed under vacuum conditions at 1000 oC. Electron microscopy investigations reveal that upon the thermal decomposition process of the films, embedded Si nanocrystals are formed in the amorphous matrix of the Si oxide. The Cu and Ni oxide films exhibited quantum confinement effects, which were studied via the UV-VIS spectroscopy. The recorded spectra reveal that the absorption edge shifts towards higher energies, as the layer thickness is reduced and becomes comparable with the excitonic Bohr radius of the material. The Si oxide thin films, after the thermal decomposition treatment are found to exhibit photoluminescence at the region between 1.3 and 1.5 eV which is originated to the excitonic recombination in the embedded Si quantum dots. Finally, it is deduced that conventional materials like metals, semiconductors and the oxides of them, can exhibit new properties when they are prepared in the form of nanostructure. These nanostructures can attract a lot of interest for possible applications in nanodevices with new but completely controllable properties.

The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Zahn, Michael Hietschold, Heinrich Lang and Thomas Gessner “Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications”, Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026 Available via http://www.sciencedirect.com or http://dx.doi.org/10.1016/j.mee.2012.10.026 © 2013 Elsevier B.V. Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that a decoration of the CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu can enhance the performance of CNT-based interconnects. The current work is therefore considered with thermal atomic layer deposition (ALD) of CuxO from the liquid Cu(I) β-diketonate precursor [(nBu3P)2Cu(acac)] and wet oxygen at 135°C. This paper focuses on different thermal in-situ pre-treatments of the CNTs with O2, H2O and wet O2 at temperatures up to 300°C prior to the ALD process. Analyses by transmission electron microscopy show that in most cases the CuxO forms particles on the multi-walled CNTs (MWCNTs). This behavior can be explained by the low affinity of Cu to form carbides. Nevertheless, also the formation of areas with rather layer-like growth was observed in case of an oxidation with wet O2 at 300°C. This growth mode indicates the partial destruction of the MWCNT surface. However, the damages introduced into the MWCNTs during the pre treatment are too low to be detected by Raman spectroscopy.

Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that the decoration of CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu instead of the currently used SiO2 can enhance the performance of CNT-based interconnects. Due to the high aspect ratio of CNTs an appropriate deposition technique has to be applied which is able to coat such structures uniformly. The current work is therefore considered with thermal atomic layer deposition (ALD) of CuxO from the liquid Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and wet oxygen at 135°C on variously pretreated multi-walled CNTs. The different in-situ pre-treatments of the CNTs with oxygen, water vapor and wet oxygen in a temperature range from 100 to 300°C at a pressure of 1.33 mbar have been carried out prior to the ALD to enable uniform nucleation on the otherwise chemical inert CNT surface. The reduction of the CuxO as well as the filling of the space between the CNTs is not part of this work. Variations of the oxidation temperature as well as the oxidation agents resulted in different growth modes of the CuxO. An oxidation with wet oxygen at 300°C yielded in a partially layer like growth of the CuxO. It is expected that this growth mode is connected to a partial destruction of the outer CNT shell due to the oxidation. However, the damage introduced to the CNTs was not high enough to be detected by Raman spectroscopy. For all other investigated pretreatments, the formation of nanoparticles (NPs) was observed by electron microscopy. This formation of CuxO NPs can be explained by the metal-tube-interaction. Furthermore, the NPs probably decorate defect sites of the CNTs due to their higher reactivity. Additionally, analysis of energy-dispersive X-ray spectroscopy and spectroscopic ellipsometry measurements suggests that the used precursor [(nBu3P)2Cu(acac)] requires reactive oxygen surface groups for initiating the ALD growth. The observation of layer-like growth of CuxO on CNTs pretreated with wet oxygen at 300°C appears promising for deposition processes of Cu seed layers on CNTs. However, more aggressive pretreatments at higher temperatures or with more aggressive oxidation agents could be required to enable layer like growth on the entire CNTs.

Thin film nanostructures may be defined as assemblies, arrays, or randomly distributed nanoparticles, nanowires, or nanotubes, which together form a layer of materials supported on a substrate surface. Because such nanostructures are supported on a substrate surface, their potential applications cover a wide area in optical, magnetic, electrochemical, electromagnetic, and optoelectronic devices. The focus of the present thesis is the development of methodologies to grow certain thin film nanostructures of some transition metal oxides (TMOs), including copper oxides and LixCoO2, through CVD, sol-gel, and electromagnetic radiation-mediated approaches. The work towards this objective can be divided into three parts: first, the design, synthesis, and systematic identification of novel metalorganic precursors of copper (monometallic) and Li and Co (bimetallic); second, the growth of nanostructured oxides thin films using these precursors; and third, the application of electromagnetic radiation to control or tailor the growth of as grown nanostructures. The underlying growth mechanisms substantiated by appropriate evidence have been put forward, wherever found relevant and intriguing. It may be added that the principal objective of the work reported here has been to explore the several ideas noted above and examine possibilities, rather than to study any specific one of them in significant detail. It is hoped earnestly that this has been accomplished to a reasonable extent. Chapter 1 reviews briefly the reports available in the literature on three specific methods of growing thin films nanostructures, namely chemical vapour deposition, sol-gel processing and light-induced approach. The objective of this chapter has been to provide the background of the work done in the thesis, and is substantiated with a number of illustrative examples. Some of the fundamental concepts involved, viz., plasmons and excitons, have been defined with illustration wherever found relevant in the context of the work. Chapter 2 describes the various techniques used for synthesis and characterisation of the metalorganic complexes as well as of the thin films. This chapters covers mostly experimental details, with brief descriptions of the working principles of the analytical procedures adopted, namely, infrared spectroscopy, mass spectroscopy, elemental analysis, and thermal analysis for characterisation of the metalorganic complexes. This is followed by a similarly brief account of techniques employed to characterize the thin films prepared in this work, viz., glancing incidence X-ray diffraction (GIXRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), electrostatic force microscopy (EFM), transmission electron microscopy (TEM), glancing incidence infra-red spectroscopy (GIIR) and, UV-visible spectroscopy. The metalorganic chemical vapour deposition (MOCVD) systems built in house and used for growth of films are described in detail. The topics in the different sections of the chapter are accompanied by pertinent diagrams. Chapter 3 deals with the design, synthesis and characterisation of novel polynuclear complexes of copper and cobalt. Keeping in mind the various advantages such as low toxicity, ease of synthesis, non-pyrophoricity, and low temperature volatility, of environmentally benign complexes based on biologically compatible such as triethanolamine, diethanolamine, the objective has been to synthesize complexes containing triethanolamine and diethanolamine of transition metals such as cobalt and copper, and to investigate their applicability in MOCVD processes as a novel class of precursors. With the notion of ‘better’ and efficient design of precursors, an attempt has been made, through a semi-empirical modeling, to understand the correlation between volatility and various intrinsic molecular parameters such as lattice energy, vibrational-rotational energy, and internal symmetry. Chapter 4 discusses the growth of nanoporous Cu4O3-C composite films through the MOCVD process employing Cu4(deaH)(dea)(oAc)5.(CH3)2CO as the precursor. The various characteristic aspects of as-grown films, such as their crystallinity, morphology, and composition have been covered elaborately in various sections of this chapter. The chapter describes the efficient guiding and confining of light exploiting the photonic band gap of these nanoporous films, which indicates the potential usefulness of these and similar films as optical waveguides. A model described in the literature on absorbing photonic crystals, wherein a periodically modulated absorption entails an inevitable spatial modulation of dispersion, i.e., of the index contrast to open a photonic band gap, has been used to calculate the indices of refraction of one of these nanoporous films. The chapter also reports briefly the preliminary electrochemical investigations carried out on a typical film, examining the notion of its application as the anode in a Li-ion rechargeable battery. Chapter 5 describes the synthesis of nanocrystalline LixCoO2 films by the sol-gel method. Reports available in literature indicate that the various phases of LixCoO2 are extremely sensitive to processing temperature, making it difficult to control dimensionality of a given phase using temperature as one of process parameters. We have investigated the possibility of using incoherent light to tailor the particle size/shape of this material. The as-grown and irradiated films were characterised by X-ray diffraction, and by microscopic and spectroscopic techniques.Optical spectroscopy was carried out in order to gain insight into the physico-chemical mechanism involved in such structural and morphological transformation. Chapter 6 deals with the synthesis of self-assembled nanostructures from the pre-synthesized nanocrystals building blocks, through optical means of exciton formation and dissociation. It has been demonstrated that, upon prolonged exposure to (incoherent) ultraviolet-visible radiation, LixCoO2 nanocrystals self-assemble into acicular architectures, through intermediate excitation of excitons. Furthermore, it has been shown that such self-assembly occurs in nanocrystals, which are initially anchored to the substrate surface such as that of fused quartz. This new type of process for the self-assembly of nanocrystals, which is driven by light has been investigated by available microscopic and spectroscopic techniques. Chapter 7 describes the stabilisation of chemically reactive metallic lithium in a carbonaceous nanostructure, viz., a carbon nanotube, achieved through the MOCVD process involving a lithium-alkyl moiety. This moiety is formed in situ during deposition through partial decomposition of a metalorganic precursor synthesized in house, which contains both lithium and cobalt. It is surmised that the stabilization of metallic Li in the nanostructure in situ occurs through the partial decomposition of the metalorganic precursor. Quantitative X-ray photoelectron spectroscopy carried out on such a film reveals that as much as 33.4% metallic lithium is trapped in carbon. Lastly, Chapter 8 briefly highlights the outlook for further investigations suggested by the work undertaken for this thesis. Novel precursors derived from biologically compatible ligands can open up possibility of growing new type of micro/nano-structures, and of unusual phases in the CVD grown films. Furthermore, it is proposed that the novel method of growth and alignment of nanocrystals through irradiation with incoherent light, employed for the specific material LixCoO2, may be employed for various other metallic and semiconducting materials.

The atomic layer deposition (ALD) of copper oxide films from [(ⁿBu₃P)₂Cu(acac)] and wet oxygen on SiO₂ and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO₂, along with a strong variation of the optical properties of the films in the early stages of the growth and signs of quantum confinement, typical for nanocrystals. In addition, differences both in growth behavior and film properties appear on dry and wet thermal SiO₂. Electron diffraction together with transmission electron microscopy shows that nanocrystalline Cu₂O with crystallites < 5 nm is formed, while upon prolonged electron irradiation the films decompose and metallic copper crystallites of approximately 10 nm precipitate. On TaN, the films grow in a linear, layer-by-layer manner, reproducing the initial substrate roughness. Saturated growth obtained at 120&deg;C on TaN as well as dry and wet SiO₂ indicates well-established ALD growth regimes. <br> &copy; 2009 The Electrochemical Society. All rights reserved.