La r eduction (\scaling") continue des dimensions des transistors MOS- FET nous a conduits a l' ere de la nano electronique. Le transistor a ef- fet de champ multi-grilles (MultiGate FET, MuGFET) avec l'architecture \nano l canal" est consid er e comme un candidat possible pour le scaling des MOSFET jusqu' a la n de la roadmap. Parall element au scaling des CMOS classiques ou scaling suivant la loi de Moore, de nombreuses propo- sitions de nouveaux dispositifs, exploitant des ph enom enes nanom etriques, ont et e faites. Ainsi, le transistor mono electronique (SET), utilisant le ph enom ene de \blocage de Coulomb", et le transistor a atome unique (SAT), en tant que transistors de dimensions ultimes, sont les premiers disposi- tifs nano electroniques visant de nouvelles applications comme la logique a valeurs multiples ou l'informatique quantique. Bien que le SET a et e ini- tialement propos e comme un substitut au CMOS (\Au-del a du dispositif CMOS"), il est maintenant largement consid er e comme un compl ement a la technologie CMOS permettant de nouveaux circuits fonctionnels. Toutefois, la faible temp erature de fonctionnement et la fabrication incompatible avec le proc ed e CMOS ont et e des contraintes majeures pour l'int egration SET avec la technologie FET industrielle. Cette th ese r epond a ce probl eme en combinant les technologies CMOS de dimensions r eduites, SET et SAT par le biais d'un sch ema d'int egration unique a n de fabriquer des transistors \Trigate" nano l. Dans ce travail, pour la premi ere fois, un SET fonction- nant a temp erature ambiante et fabriqu es a partir de technologies CMOS SOI a l' etat de l'art (incluant high-k/grille m etallique) est d emontr e. Le fonctionnement a temp erature ambiante du SET n ecessite une le (ou canal) de dimensions inf erieures a 5 nm. Ce r esultat est obtenu grce a la r eduction du canal nano l "trigate" a environ 5 nm de largeur. Une etude plus ap- profondie des m ecanismes de transport mis en jeu dans le dispositif est r ealis ee au moyen de mesures cryog eniques de conductance. Des simula- tions NEGF tridimensionnelles sont egalement utilis ees pour optimiser la conception du SET. De plus, la coint egration sur la m^eme puce de MOS- FET FDSOI et SET est r ealis ee. Des circuits hybrides SET-FET fonction- nant a temp erature ambiante et permettant l'ampli cation du courant SET jusque dans la gamme des milliamp eres (appel e \dispositif SETMOS" dans la litt erature) sont d emontr es de m^eme que de la r esistance di erentielle n egative (NDR) et de la logique a valeurs multiples. Parall element, sur la m^eme technologie, un transistor a atome unique fonc- tionnant a temp erature cryog enique est egalement d emontr e. Ceci est obtenu par la r eduction de la longueur de canal MOSFET a environ 10 nm, si bien qu'il ne comporte plus qu'un seul atome de dopant dans le canal (dif- fus ee a partir de la source ou de drain). A basse temp erature, le trans- port d' electrons a travers l' etat d' energie de ce dopant unique est etudi e. Ces dispositifs fonctionnent egalement comme MOSFET a temp erature am- biante. Par cons equent, une nouvelle m ethode d'analyse est d evelopp ee en corr elation avec des caract eristiques a 300K et des mesures cryog eniques pour comprendre l'impact du dopant unique sur les caracteristiques du MOSFET a temp erature ambiante.

Exploiter des effets dépendants du temps pour induire et contrôler des courants à travers des conducteurs mésoscopiques et nanoscopiques est un enjeu majeur dans le domaine du transport quantique. Dans cette thèse, nous considérons deux systèmes de taille nanométrique pour lesquels un courant est induit grâce au couplage entre champs extérieurs dépendants du temps et le transport d'électrons. Nous étudions d'abord un problème de pompage quantique au sein d'un système à trois sites en configuration d'anneau, en considérant la possibilité d'induire un courant continu par modulation temporelle des paramètres de contrôle. Nous nous intéressons en particulier à la transition entre régime adiabatique et antiadiabatique en présence d'un mécanisme de dissipation modélisé par un couplage entre le système et un bain extérieur.Nous montrons que le modèle dissipatif admet une solution analytique complète valable pour la composante DC du courant à fréquence arbitraire. Ceci nous permet de bien comprendre comment le courant induit dépend de la fréquence de pompage. Nous nous concentrons ensuite sur un autre système de contrôle du courant exploitant le phénomène des oscillations tunnel à un électron (SETOs). Contrairement au cas précédent, ici la circulation d'un courant continu à travers un circuit comportant une jonction tunnel produit, pour le régime approprié, un courant quasi-périodique d'électrons. On étudie le spectre de bruit à température nulle d'une jonction tunnel dans différents environnements résistifs dans le but de déterminer les limites du régime des SETOs et de quantifier leur degré de périodicité. Nous généralisons par la suite les résultats à température finie et discutons des effets des fluctuations quantiques. / Exploiting time-dependent effects to induce and control currents through mesoscopic and nano\-scopic conductors is a major challenge in the field of quantum transport. In this dissertation we consider two nanoscale systems in which a current can be induced through intriguing mechanisms of coupling between excitations by external fields and electron transport.We first study a quantum pumping problem, analyzing the possibility to induce a DC response to an AC parametric driving through a three-site system in a ring configuration. We are interested in particular in the crossover between adiabatic and antiadiabatic driving regimes and in the presence of dissipation, which is accounted for by coupling with an external bath. We show that for a clever choice of this coupling the dissipative model admits a full analytical solution for the steady state current valid at arbitrary frequency, which allows us to fully understand the pumping-frequency dependence of the induced current. We then focus on a different current-controlling scheme exploiting the phenomenon of single-electron tunneling oscillations (SETOs). In this case, opposite to what happens for pumping, an AC effect, an almost periodic current of single electrons, arises through a tunnel junction circuit as a consequence of a DC bias. We study the zero-temperature noise spectrum of a tunnel junction in different resistive environments with the aim to determine the boundaries of the SETOs regime and quantify their quality in terms of periodicity. We then discuss the finite-temperature generalization and the possibility to account for the effects of quantum fluctuations.

L'étude du transport électronique dans des nano-objets métalliques et magnétiques issus de la chimie est un challenge en spintronique. En particulier, le manque de résultats expérimentaux révèle la difficulté à positionner ces nano-objets entre des électrodes de mesures tout en préservant leurs propriétés (magnétisme, intégrité des barrières tunnel organiques...). Ce travail de thèse vise à contourner ces difficultés et à étudier le magnétotransport dans ces systèmes. Pour cela, nous avons conçu et développé à l'intérieur d'une boîte à gants couplée à un bâti de pulvérisation cathodique des systèmes expérimentaux d'assemblages de nano-objets. Nous avons étudié les mécanismes mis en jeu lors de l'assemblage par la technique de dip coating, et réussi à déposer des monocouches de nanoparticules (NPs) de natures différentes (FeCo, Fe, Co) sur des surfaces d'Au, de SiO2 et de résine fine (40 nm). Ces résultats, couplés à une technique de nanoindentation, ont permis de mesurer quelques - voire une- NP(s). Une autre technique, la diélectrophorèse, s'est révélée simple et efficace pour piéger et orienter des nano-objets de taille, de nature, et de forme différentes entre des électrodes. Grâce à cette technique et au dépôt d'une couche protectrice d'alumine, nous avons étudié les propriétés de magnétotransport de plusieurs types de nano-objets sensibles à l'oxydation ou à la vapeur d'eau: NPs de Fe, de Co, FeCo et [Fe(H-trz)2(trz)](BF4)] (composés à transition de spin). Trois jeux de barrières tunnel organiques greffés sur des NPs de fer ont présenté de la magnétorésistance tunnel jusqu'à température ambiante. De plus, des nano-objets de [Fe(H-trz)2(trz)](BF4)] de facteurs de forme variable, ont montré une variation de la conductance liée à la transition de spin. Enfin, nous avons étudié l'influence de la longueur des ligands sur les propriétés de conductions de NPs de Cobalt, qui a validé nos méthodes d'échange de ligands et ont pu être analysées quantitativement. Nos travaux rendent désormais envisageable l'utilisation de NPs issues de la chimie dans différents domaines de la spintronique / The study of charge transport in metallic and magnetic nano-objects chemically synthesized is a challenge in spintronic. Particularly, the lack of experimental results reveals the difficulty in locating such nano-objects in between electrodes while preserving their good properties. This thesis aims to overcome these difficulties in order to study the magnetotransport in such systems. Therefore, we have designed and developed technical processes which induce the self-assembly of the nano-objects inside a glove box-sputtering system. After studying the mechanisms involved in the self-assembly obtained by dip coating, we succeeded to deposit monolayers of nanoparticles (NPs) of different materials (FeCo, Fe, Co) on gold surfaces, SiO2 and thin resin film (40 nm). These results, coupled with a nanoindentation technique allows us to measure a few or a unique NP(s). Another technique, called dielectrophoresis, has been proved to be a simple and versatile way to trap (and align) nano-objects with different (aspect ratio), size, nature, and shape in between the electrodes. Thanks to this technique and the deposit of a protective capping layer of alumina, we studied the magnetotransport properties of a large number of nano-objects sensitive to oxidation or humidity: Fe, Co, FeCo and [Fe(H-trz)2(trz)](BF4)] (spin crossover compounds). Three sets of organic tunnel barriers surrounding different Fe NPs presented tunnel magnetoresistance up to room temperature. Moreover, [Fe(H-trz)2(trz)](BF4)] nano-objects with different aspect ratio, highlighted a change in conductance connected to the spin transition. Finally, we validated our ligands exchange methods by studying the influence of the ligands length on the conduction properties of Co NPs, which have been analyzed quantitatively. Our works demonstrate the possibility to use the chemical NPs in different fields of spintronics

Les amplificateurs paramétriques Josephson (JPA) se sont révélés être un outil indispensablepour l’étude expérimentale de dispositifs quantiques dans le régime micro-onde ; car ilsrajoutent uniquement le minimum de bruit imposé par la mécanique quantique[1]. Cependant,ces amplificateurs sont beaucoup plus difficiles à utiliser et optimiser que leurs homologuesclassiques. Récemment, plusieurs expériences réalisées avec des circuits supraconducteurs,composés d’une jonction Josephson polarisée en tension en série avec un résonateur microonde,ont montré qu’une paire de Cooper peut traverser la barrière de la jonction par effettunnel en émettant un ou plusieurs photons avec une énergie totale de 2e fois la tensionappliquée. Dans cette thèse, nous montrerons qu’un tel circuit permet de mettre en place unamplificateur micro-onde préservant la phase que nous appelons « Amplificateur basé sur letunneling inélastique de paires de Cooper » (ICTA). Il est alimenté par une tension continueet peut fonctionner avec un bruit très proche de la limite quantique.Nous commencerons en présentant le principe du fonctionnement de l’ICTA. Par analogieavec la théorie quantique des JPAs[2], nous avons étudié les performances de cet amplificateurcomme le gain, la bande passante et le bruit. Ensuite, nous présenterons la premièrepreuve expérimentale d’une amplification proche de la limite quantique sans utilisation d’unepompe micro-onde externe, mais simplement d’une tension continue dans une configurationextrêmement simple. Ces mesures ont été faites sur des échantillons avec des jonctionsen aluminium, dénommés ICTA de première génération. Selon nos résultats théoriques etexpérimentaux, nous avons conçu des circuits hyperfréquences où l’impédance présentéeà la jonction dépend de fréquences spécifiques afin d’optimiser les performances de notreamplificateur. Ces échantillons, dénommés ICTA de seconde génération, ont été fabriquésavec du nitrure de niobium. Une amélioration significative du gain et du bruit a été prouvée.Un tel amplificateur, alimenté par une simple tension continue, pourrait rendre la mesurede signaux micro-ondes au niveau du photon unique beaucoup plus faciles et permettred’intégrer plusieurs amplificateurs sur une seule puce. Il pourrait donc être un élémentimportant pour la lecture de qubit dans les processeurs quantiques à grande échelle. / Josephson parametric amplifiers (JPA), have proven to be an indispensable tool for awide range of experiments on quantum devices in the microwave frequency regime, becausethey provide the lowest possible noise. However, JPAs remain much more difficult to use andoptimize than conventional microwave amplifiers. Recent experiments with superconductingcircuits consisting of a DC voltage-biased Josephson junction in series with a resonator,showed that a tunneling Cooper pair can emit one or several photons with a total energyof 2e times the applied voltage. In this thesis we show that such q circuit can be used toimplement a new type of phase preserving microwave amplifier, which we call InelasticCooper pair Tunneling Amplifier (ICTA). It is powered by a simple DC bias and offers nearquantum-limited noise performance.We start this work by presenting a brief and simple picture of the basic ICTA operatingprinciples. In analogy with the quantum theory of JPAs, we calculate the performances ofthis amplifier such as the gain, bandwidth and noise. Then, we present the first experimentalproof that amplification close to the quantum limit is possible without microwave drive inan extremely simple setup. These measurements are made on a first generation of samplesbased on aluminium junctions. According to our theoretical and experimental results, wehave designed microwave circuits presenting specific frequency-dependent impedances tothe junction in order to optimize the performances of our amplifier. This second generationof ICTA samples is fabricated from niobium nitride and provide significantly lower noiseand higher gain.We expect that once fully optimized, such an amplifier, powered by simple DC voltagescould then make measuring microwave signals at the single photon level much easier andallow to deploy many amplifiers on a chip. It could therefore be an important ingredient forqubit readout in large-scale quantum processors.

We report on conductance measurements in carbon nanotube based double quantum dots connected to two normal electrodes and a central superconducting finger. By operating our devices as Cooper pair beam splitters, we provide evidence for Crossed Andreev Reflection (CAR). We inject Cooper pairs in the superconducting electrode and measure the differential conductance at both left and right arm. The contacts split the device into two coupled quantum dots. Each of the quantum dots can be tuned by a lateral sidegate. If the two sidegates are tuned such that both quantum dots are at a transmission resonance, a considerable part of the injected Cooper pairs splits into different normal contacts. On the contrary, if only one of the two dots is at resonance, nearly all pairs tunnel to the same normal contact. By comparing different triple points in the double dot stability diagram, we demonstrate the contribution of split Cooper pairs to the total current. In this manner, we are able to extract a splitting efficiency of up to 50% in the resonant case. Carbon Nanotubes ensure ballistic transport and long spin-flip scattering lengths. Due to these properties they are promising candidates to investigate EPR-type correlations in solid state systems.

Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer MOS transistors. Single Electron Transistor (SET) has attracted attention mainly because of its unique Coulomb blockade oscillations characteristics, ultra low power dissipation and nanoscale feature size. Despite the high potential, due to some intrinsic limitations (e.g., very low current drive) it will be very difficult for SET to compete head-to-head with CMOS’s large-scale infrastructure, proven design methodologies, and economic predictability. Nevertheless, the characteristics of SET and MOS transistors are quite complementary. SET advocates low-power consumption and new functionality (related to the Coulomb blockade oscillations), while CMOS has advantages like high-speed driving and voltage gain that can compensate the intrinsic drawbacks of SET. Therefore, although a complete replacement of CMOS by single-electronics is unlikely in the near future, it is also true that combining SET and CMOS one can bring out new functionalities, which are unmirrored in pure CMOS technology. As the hybridization of CMOSand SET is gaining popularity, silicon SETs are appearing to be more promising than metallic SETs for their possible integration with CMOS. SETs are normally studied on the basis of the classical Orthodox Theory, where quantization of energy states in the island is completely ignored. Though this assumption greatly simplifies the physics involved, it is valid only when the SET is made of metallic island. As one cannot neglect the quantization of energy states in a semi conductive island, it is extremely important to study the effects of energy quantization on hybrid CMOSSET integrated circuits. The main objectives of this thesis are: (1) understand energy quantization effects on SET by numerical simulations; (2) develop simple analytical models that can capture the energy quantization effects; (3)analyze the effects of energy quantization on SET logic inverter, and finally; (4)developa CAD framework for CMOS-SETco-simulation and to study the effects of energy quantization on hybrid circuits using that framework. In this work the widely accepted SIMON Monte Carlo (MC) simulator for single electron devices and circuits is used to study the effects of energy quantization. So far SIMON has been used to study SETs having metallic island. In this work, for the first time, we have shown how one can use SIMON to analyze SET island properties having discrete energy states.It is shown that energy quantization mainly changes the Coulomb Blockade region and drain current of SET devices and thus affects the noise margin, power dissipation, and the propagation delay of SET logic inverter. Anew model for the noise margin of SET inverter is proposed, which includes the energy quantization term. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. An analytical expression is developed, which explicitly defines the maximum energy quantization (termedas “Quantization Threshold”)that an SET inverter logic circuit can withstand before its noise margin upper bound crosses the acceptable tolerance limit. It is found that SET inverter designed with CT : CG =0.366 (where CT and CG are tunnel junction and gate capacitances respectively) offers maximum robustness against energy quantization. Then the effects of energy quantization are studied for Current biased SET (CBS), which is an integral part of almost all hybrid CMOS-SET circuits. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics though it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: Negative Differential Resistance (NDR) and Neurone Cell, which use CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term. A novel CAD framework is then developed for CMOS-SET co-simulation, whichuses MCsimulator for SET devices alongwithconventional SPICE. Using this framework, the effects of energy quantization are studied for some hybrid circuits, namely, SETMOS, multiband voltage filter, and multiple valued logic circuits. It is found that energy quantization degrades the performance of hybrid circuit, which could be compensated by properly tuning the bias current of SET devices. Though this study is primarily done by exhaustive MC simulation, effort has also been put to develop first order compact model for SET that includes energy quantization effects. Finally it has been demonstrated that the SET behavior under energy quantization can be predicted byslightlymodifyingthe existing SETcompact models that are valid for metallic devices having continuous energy states.

My thesis is devoted to the study of transport properties of Silicon Nanowires obtained by a bottom-up approach. The choice for the material system has been limited to undoped SiNWs because they are considered as the ultimate choice for ultrascaled electronic devices. For these systems, the problem of an effective carrier injection in the semiconductor is particularly important. The mechanism of carrier injection in Gate-All-Around Schottky barrier transistors was studied by temperature dependent measurements. Multiple gates are used to discriminate between different device switching mechanisms occurring either at the source and drain contacts, or at the level of the silicon channel. The gating scheme has proved be effective in suppressing the Schottky barrier enabling carrier injection at low temperature. Moreover, different electronic functionalities like p-n junctions and logic gates can be successfully implemented in such devices without the need of doping. I will describe a novel technique for the fabrication of metal silicide contacts to individual silicon nanowires based on an electrically-controlled Joule annealing process. This has enabled the realization of silicide-silicon-silicide tunnel junctions with silicon channel lengths down to 8nm. The silicidation of silicon nanowires by Nickel and Platinum could be observed in-situ and in real time by performing the experiments of Joule assisted silicidation in the chamber of a Scanning Electron Microscope. Lastly, signatures of resonant tunneling through an isolated Platinum Silicide cluster were detected in a Silicon tunnel junction. Tunneling spectroscopy in a magnetic field revealed the Zeeman splitting of the ground and the excited states.

[pt] Nesta tese foram estudados três sistemas nanoscópicos compostos de pontos quânticos (PQs). No primeiro deles foi analisada a denominada nuvem Kondo, ou a extensão da blindagem que os spins da banda de condução fazem do spin de uma impureza magnética embebida em uma matriz metálica e representada, no nosso caso, por um PQ. As propriedades da nuvem Kondo foram obtidas através da manifestação da ressonância Kondo na densidade de estados local nos sítios da matriz metálica e também através das correlações de spin entre o spin do elétron no PQ e os spins da banda de condução. Foi possível encontrar uma concordância entre as extensões da nuvem Kondo obtidas com ambos métodos. O segundo sistema estudado consiste em uma estrutura de três PQs alinhados e com o PQ central acoplado a dois contatos metálicos. Foi analisada a operação deste sistema como uma porta lógica quântica cujo funcionamento depende do estado de carga do PQ central. Foi feito um estudo dependente do tempo das propriedades do sistema e, em particular, da correlação dos spins dos PQs laterais. Mostramos que o efeito Kondo, refletido na condutância do sistema, pode ser uma ferramenta fundamental para conhecer o estado da porta quântica. Os primeiros dois sistemas foram tratados usando o método dos Bósons Escravos na aproximação de campo médio. Finalmente, foi estudado o transporte termoelétrico em um sistema de dois PQs quando um deles está acoplado a contatos metálicos unidimensionais. O sistema foi analisado no regime de resposta linear e não linear a um potencial externo no regime de bloqueio de Coulomb. Mostramos que a presença de ressonâncias Fano e de uma singularidade de Van-Hove na densidade de estados dos contatos unidimensionais perto do nível de Fermi são ingredientes fundamentais para o aumento da eficiência termoelétrica do dispositivo. O problema de muitos corpos foi resolvido na aproximação de Hubbard III que permite um estudo correto das propriedades de transporte deste sistema para T maior que TK, onde TK é a temperatura Kondo. / [en] In this thesis, were studied three nanoscopic quantum dot (QD) systems. First, the so-called Kondo cloud was analyzed, the extension of the conduction band spin screening of a magnetic impurity embedded in a metallic matrix and represented, in our case, by a QD. The Kondo cloud properties were obtained studying the way in which the local density of states of the metallic matrix sites reflects the Kondo resonance and also through the spin-spin correlations between the QD and the conduction band spins. It was possible to find a good agreement between the Kondo cloud extensions obtained using both methods. The second system consists of three aligned QDs with the central QD connected to two metallic leads. The operation of this system as a quantum gate was studied, which depends on the central QD charge. A time dependent study of the system properties and, in particular, of the lateral QDs spin correlation was developed. We showed that the Kondo effect, reflected in the conductance, could be a fundamental tool to measure the information contained in the quantum gate state. The first two systems were treated using the Slave Bosons Mean Field Approximation method. Finally, we studied the thermoelectric transport of a two QD system when one of them is connected to two onedimensional leads. The system was analyzed in the linear and nonlinear response to an external applied potential, always in the Coulomb blockade regime. It was found that the presence of Fano resonances and a Van-Hove singularity in the one-dimensional lead density of states near the Fermi level are fundamental ingredients to enhance thermoelectric efficiency. The many-body problem was treated in the Hubbard III approximation, which is a correct approach to study the transport properties for T greater than TK, where TK is the Kondo temperature.

La compréhension des propriétés de transport de charge des nanostructures métalliques et magnétiques est très importante pour le développement et la miniaturisation des dispositifs fonctionnels modernes. En particulier, les nanostructures synthétisées chimiquement sont intéressant car elles permettent de mieux contrôler leur forme et leur taille, ce qui peut être utilisé pour ajuster leurs propriétés de transport de charge. L'objectif de cette thèse est d'étudier les aspects différents des propriétés de transport de charge qui résultent de la petite taille et de la nature magnétique de différents types de nanostructures comprenant des nanoparticules de Pt (1,3-3 nm), des particules magnétiques FeCo (⁓10 nm), et complexe de coordination à base de triazole Fe (II). Pour préciser davantage, des phénomènes tels que le blocage de Coulomb, la magnétorésistance tunnel et la transition de spin seront mis en évidence. En fonction de la propriété souhaitée, ces nanostructures peuvent être exploitées pour leurs applications dans divers capteurs, actionneurs et dispositifs spintroniques, etc. / Understanding charge transport properties of metallic and magnetic nano-structures is highly important for the development and miniaturization of modern functional devices. In particular, chemically synthesized nano-structures are in focus as they provide better control over their shape and size, which can be used to tune their charge transport properties. The aim of this thesis is to study the various aspects of charge transport properties which emerge due to the small size and magnetic nature of different types of nanostructures which include Pt nanoparticles (1.3-3 nm), FeCo magnetic particles (⁓10 nm), and Fe (II) triazole based coordination complex. To further specify, phenomenon such as Coulomb blockade, tunnel magnetoresistance and spin-transition will be in focus. Depending on the desirable property, these nanostructures can be exploited for their applications in a variety of sensors, actuators and spintronic devices etc.

Les nanofils d’or ultrafins sont des objets fascinants présentant une morphologie quasi 1D, leur diamètre n’excédant par 2 nm pour une longueur micrométrique. Les quelques 30 atomes qui composent la section de ses fils sont principalement des atomes de surface, permettant d’envisager des applications de type capteurs. De plus, l’anisotropie de forme unique pourrait permettre un confinement électronique unidimensionnel, menant à de nouvelles propriétés physiques. Nous avons réalisé une étude fondamentale de la synthèse et réaliser une première étude de transport sur une assemblée de nanofils.La première partie du manuscrit, divisée en quatre chapitres, consiste en l’étude du mécanisme de croissance de ces nanofils ultrafins. Suite à une analyse détaillée des modèles proposés, nous introduisons la technique de diffusion des rayons X aux petits angles (SAXS) utilisée pour nos études mécanistiques. Le chapitre 3 est consacré à l’étude de la synthèse de nanofils en milieu confiné. Contrairement aux postulats précédents, un suivi cinétique in-situ par SAXS nous a permis de montrer que la phase lamellaire n’intervenait pas dans la croissance des objets, voir même qu’elle était détrimentaire à leur formation. Le dernier chapitre présente la synthèse en milieu isotrope. Un mécanisme de croissance efficace où les sphères jouent le rôle de germe est avancé. L’auto-organisation des fils en solution suivant une phase hexagonale appuie l’hypothèse d’une stabilisation des fils par une double couche d’oleylamine et de chlorure d’ammonium. Un mécanisme de croissance analogue aux mécanismes proposés pour les bâtonnets d’or dans l’eau est donc proposé.La deuxième partie du manuscrit, divisée en trois chapitres, consiste en une caractérisation des propriétés de transport électronique dans ces nanofils d’or ultrafins. Nous dressons, dans un premier temps, un bilan des différents régimes de transport observés au sein de nano-objets de basse dimensionnalité. Suite aux étapes indispensables de dépôt et de connexion, le troisième chapitre présente les premières mesures de transport effectuées sur des assemblées de nanofils d’or faiblement couplées. Nous mettons ainsi en évidence, grâce à une étude sur une large gamme de températures et de tensions de polarisation, un transport de charge coopératif dans le cadre d’un régime de blocage de Coulomb. / Ultra-narrow gold nanowires are captivating objects with a quasi-1D morphology, with a diameter lower than 2 nm and a micrometric length. The few 30 atoms which compose the wire section are mainly surface atoms, allowing to consider applications such as sensors. Moreover, the unique anisotropic shape may permit a one-dimensional electronic confinement, leading to new physical properties. We conducted a fundamental study of the synthesis and a preliminary transport study on an assembly of nanowires.The first part of the manuscript, divided into four chapters, consist of the growth mechanism study of these ultra-narrow gold nanowires. Further to a detail analysis of the proposed models, we present the small angle X-rays scattering (SAXS) technique used for our mechanistic studies. The third chapter deals with the study of the nanowires synthesis in a confined environment. Unlike the previous postulates, a in-situ kinetic monitoring by SAXS allow us to point out that the lamellar phase was not involved in the objects’ growth, even more that it was detrimental for their formation. The last chapter presents the synthesis in an isotropic system. An efficient growth mechanism where the spheres act as seeds is advanced. The wires’ self-assembly in solution in a hexagonal super-lattice supports the hypothesis of wire stabilization by a bilayer of oleylamine and oleylammonium chloride. Therefore, a growth mechanism similar to the one proposed in the case of gold nanorods in water is proposed.The second part of the manuscript, divided into three chapters, consist in a characterization of the electronic transport properties in these ultra-narrow gold nanowires. At first, we report on the different types of transport observed low-dimensionality nano-objects. Further to the necessary deposit and connection steps, the third chapter presents the first transport measurements performed weakly coupled assemblies of gold nanowires. We highlight, through a study on a wide range of temperatures and bias voltages, a cooperative charges transport through a Coulomb blockade regime.