Submitted by Johnny Rodrigues (johnnyrodrigues@ufcg.edu.br) on 2018-04-06T20:12:23Z No. of bitstreams: 1 TACIANA REGINA DE GOUVEIA - TESE PPG-CEMat 2014..pdf: 4953603 bytes, checksum: ea581c261908041111cd0d411a551545 (MD5) / Made available in DSpace on 2018-04-06T20:12:23Z (GMT). No. of bitstreams: 1 TACIANA REGINA DE GOUVEIA - TESE PPG-CEMat 2014..pdf: 4953603 bytes, checksum: ea581c261908041111cd0d411a551545 (MD5) Previous issue date: 2014-08-28 / Capes / Os polímeros derivados do petróleo têm provocado impactos ambientais devido ao descarte inadequado. Uma alternativa para esse problema é a utilização de polímeros biodegradáveis ou a produção de blendas a partir destes polímeros. Neste trabalho, foram preparadas blendas de poli (ácido lático) - PLA, poli (caprolactona) - PCL, com três copolímeros diferentes: EMA, E-GMA e o EMAGMA que são copolímeros de etileno-acrilato de metila, etileno-metacrilato de glicidila e o terpolímero etileno-acrilato de metila-metacrilato de glicidila, respectivamente. As composições utilizadas para as blendas foram as seguintes: PLA/PCL (90/10), PLA/PCL (80/20), PLA/Copolímeros (90/10) e PLA/PCL/Copolímeros (80/10/10). Estas foram preparadas por fusão em uma extrusora de rosca dupla corrotativa e, em seguida, moldadas por injeção sob a forma de corpos de prova de tração, impacto e HDT. Todas as composições foram caracterizadas por: ensaios mecânicos de tração e impacto, temperatura de distorção térmica - HDT, calorimetria exploratória diferencial - DSC, difração de raios X - DRX, análise térmica dinâmica-mecânica - DMTA, espectroscopia na região do infravermelho por transformada de Fourier - FTIR, microscopia eletrônica de varredura - MEV, reometria de torque, ensaio reológico e reometria capilar. As propriedades mecânicas apresentaram redução nos valores do módulo e da resistência à tração e um aumento no alongamento e na resistência ao impacto para todas as composições quando comparadas com o PLA puro, com destaque para as composições que continham o copolímero EMA-GMA. A HDT não apresentou mudanças significativas para as diferentes composições em comparação com o PLA puro. O comportamento térmico e termomecânico foi avaliado por DSC e por DMTA e foi possível observar a transição térmica das blendas. Por DRX foi possível observar as fases cristalinas das blendas de PLA. A morfologia da superfície de fratura observada por MEV ilustrou que ocorreram mudanças significativas em função da composição. Os resultados de reometria de torque não apresentaram mudanças significativas no comportamento do PLA, enquanto que os resultados obtidos no ensaio reológico ilustraram aumento no módulo de armazenamento em todas as composições. A partir do ensaio de reometria capilar foi visto que houve redução da viscosidade aparente e da tensão de cisalhamento sob altas taxas de cisalhamento para todas as composições. / The polymers derived from petroleum have caused environmental impacts due to improper disposal. An alternative to this problem is the use of biodegradable polymers or blends production from these polymers. In this work, blends of poly (lactic acid) - PLA, poly (-caprolactone) - PCL, were prepared with three different copolymers: EMA, E-GMA and EMA-GMA are copolymers the ethylene-methyl acrylate, ethylene-glycidyl methacrylate and terpolymer ethylene-methyl acrylate-glycidyl methacrylate respectively. The compositions used in the blends were as follows: PLA/PCL (90/10) PLA/PCL (80/20) PLA/ Copolymer (90/10) and PLA/PCL/Copolymer (80/10/10). These were prepared by melting in an extruder twin screw co-rotating and then injection molded in the form of specimens tensile, impact and HDT. All compositions were characterized by: mechanical tensile and impact , heat distortion temperature - HDT, differential scanning calorimetry - DSC, X-ray diffraction - XRD, dynamic mechanical thermal analysis – DMTA, spectroscopy in the infrared region by transform Fourier - FTIR, scanning electron microscopy - SEM, torque rheometer, rheological testing and capillary rheometer. The mechanical properties showed reduced values of modulus and tensile strength and an increase in elongation and impact resistance for all compositions when compared with pure PLA, especially for compositions containing copolymer EMA-GMA. The HDT showed no significant changes for the different compositions compared with pure PLA. The thermal and thermomechanical behavior was evaluated by DSC and DMTA and it was possible to observe the thermal transition of the blends. XRD was possible to observe the crystalline phases of the blends of PLA. The morphology of the fracture surface was observed by SEM illustrated that significant changes as a function of composition. The torque rheometer results showed no significant change in the behavior of PLA, while the rheological test results illustrate the increase in storage modulus in all compositions. From the test capillary rheometer was seen that there was a reduction in the apparent viscosity and shear stress at high shear rates for all compositions.

Une étude expérimentale a été effectuée sur diverses formules de trois familles d’enrobés bitumineux avec des taux de recyclage variables et la présence ou non de régénérant. La composition des mélanges et le procédé de fabrication ont été élaborés afin d’effectuer une étude comparative. L’enrobage produit des variations des paramètres physico-chimiques des liants telles que la consistance, la température de transition vitreuse, les fractions cristallisables, les taux d’aromatiques et d’asphaltènes ; ces variations sont limitées en présence de régénérant. Lorsque le taux d’AE augmente, la compactibilité et l’orniérage des mélanges diminuent et leur rigidité viscoélastique augmente, mais le régénérant limite ces variations. Globalement, les AE produisent une augmentation de la résistance à la fatigue des formules et un aplatissement des droites de Wöhler. Le régénérant améliore le paramètre de fatigue ɛ6 ; les performances en fatigue augmentent avec la TBA et l’indice colloïdal du liant ainsi qu’avec la diminution de la viscosité de l’enrobé. L’impact favorable d’un taux élevé d’AE et du régénérant sur le trafic admissible a été déterminé suite au dimensionnement d’une structure souple tri-couche. À basse température, la détérioration par les AE de la ductilité en traction et de la température de rupture par retrait empêché se trouvent limitées par le régénérant ; un compromis est cependant à trouver avec la résistance à la fatigue. Les formules régénérées mises en œuvre sur la couche de roulement d’une route départementale ont subi une moindre évolution après six ans de service que les mélanges non régénérés. / An experimental programme has been performed on three types of bituminous mixes with variable recycling rates and the possible addition of rejuvenator. The mix composition and the production process have been defined in order to perform a comparative analysis. The coating process modifies the physico-chemical parameters of the binders, like consistency, glassy transition temperature, cristallizable moiety, aromatics and asphaltenes rates; the above variations are limited by using the rejuvenator. As the RAP content increases, the compactibility and the rutting of the mixes decrease and the viscoelastic stiffness increases, but the rejuvenation reduces these variations. Globally, RAP increases the fatigue resistance of the mixes and flattens the Wöhler curve. Rejuvenation enhances ɛ6 fatigue parameter; fatigue performances increase with R&B temperature and colloidal index of the binder and as the viscous component of the mixes decreases. The positive impact of a high rate of RAP and of the rejuvenation on the allowable traffic has been evaluated from the structural design of a threelayered pavement. At low temperature, the deterioration of the tension ductility and of the stress restrained failure temperature produced by the RAP, is limited by the rejuvenation; a compromise with the fatigue resistance has to be found. The rejuvenated mixes laid as surface layers on a provincial road have experienced a smaller evolution that non rejuvenated mixes.

Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft. / Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature.

Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft.:Lists of Abbreviations and Symbols VIII Lists of Figures and Tables XIV 1 Introduction 1 I Theoretical Part 3 2 Nickel and Nickel Oxides 4 2.1 Introduction and Existence 5 2.2 Material properties of Nickel and Nickel Oxide 5 2.3 Application in electronic industry 5 3 Atomic Layer Deposition 7 3.1 History 8 3.2 Definition 8 3.3 Features of thermal-ALD 8 3.3.1 ALD growth mechanism – an ideal view 8 3.3.2 ALD growth behaviour 10 3.3.3 Growth mode 11 3.3.4 ALD temperature window 11 3.4 Benefits and limitations 12 3.5 Precursor properties for thermal-ALD 13 3.6 ALD & CVD of Nickel – A literature survey 13 4 Metrology 17 4.1 Thermal analysis of precursors 18 4.2 Film and growth characterization 21 4.2.1 Quartz Crystal Microbalance 21 4.2.2 Spectroscopic Ellipsometry 24 4.2.3 X-Ray Photoelectron Spectroscopy 28 4.2.4 Scanning Electron Microscopy 29 4.2.5 X-Ray Reflectometry and X-Ray Diffraction 29 4.2.6 Four Point Probe Technique 20 5 Rapid Thermal Processing 32 5.1 Introduction 33 5.2 Basics of RTP 33 5.3 Nickel Silicides-A literature survey 33 II Experimental Part 36 6 Methodologies 37 6.1 Experimental setup 38 6.2 ALD process 41 6.2.1 ALD process types and substrate setups 41 6.2.2 Process parameters 41 6.3 Experimental procedure 42 6.3.1 Tool preparation 42 6.3.2 Thermal analysis and ALD experiments from nickel precursors 43 6.3.3 Data acquisition and evaluation 44 6.3.4 Characterization of film properties 46 7 Results and discussion 48 7.1 Introduction 49 7.2 QCM verification with Aluminum Oxide ALD process 49 7.3 ALD process from the reference precursor 50 7.3.1 Introduction 50 7.3.2 TG analysis for Ni(amd) precursor 51 7.3.3 Thermal stability test for Ni(amd) 51 7.3.4 ALD process optimization 52 7.3.5 Film properties 54 7.4 Evaluating the novel Nickel precursors 55 7.4.1 Screening tests for precursor P1 55 7.4.2 Screening tests for precursor P2 62 7.4.3 Screening tests for precursor P3 66 7.4.4 Screening tests for precursor P4 70 7.4.5 Screening tests for precursor P5 72 7.5 Comparison of all nickel precursors used in this work 74 8 Conclusions and outlook 77 References 83 III Appendix 101 A Deposition temperature control & Ellipsometry model 102 B Gas flow plan 105 / Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature.:Lists of Abbreviations and Symbols VIII Lists of Figures and Tables XIV 1 Introduction 1 I Theoretical Part 3 2 Nickel and Nickel Oxides 4 2.1 Introduction and Existence 5 2.2 Material properties of Nickel and Nickel Oxide 5 2.3 Application in electronic industry 5 3 Atomic Layer Deposition 7 3.1 History 8 3.2 Definition 8 3.3 Features of thermal-ALD 8 3.3.1 ALD growth mechanism – an ideal view 8 3.3.2 ALD growth behaviour 10 3.3.3 Growth mode 11 3.3.4 ALD temperature window 11 3.4 Benefits and limitations 12 3.5 Precursor properties for thermal-ALD 13 3.6 ALD & CVD of Nickel – A literature survey 13 4 Metrology 17 4.1 Thermal analysis of precursors 18 4.2 Film and growth characterization 21 4.2.1 Quartz Crystal Microbalance 21 4.2.2 Spectroscopic Ellipsometry 24 4.2.3 X-Ray Photoelectron Spectroscopy 28 4.2.4 Scanning Electron Microscopy 29 4.2.5 X-Ray Reflectometry and X-Ray Diffraction 29 4.2.6 Four Point Probe Technique 20 5 Rapid Thermal Processing 32 5.1 Introduction 33 5.2 Basics of RTP 33 5.3 Nickel Silicides-A literature survey 33 II Experimental Part 36 6 Methodologies 37 6.1 Experimental setup 38 6.2 ALD process 41 6.2.1 ALD process types and substrate setups 41 6.2.2 Process parameters 41 6.3 Experimental procedure 42 6.3.1 Tool preparation 42 6.3.2 Thermal analysis and ALD experiments from nickel precursors 43 6.3.3 Data acquisition and evaluation 44 6.3.4 Characterization of film properties 46 7 Results and discussion 48 7.1 Introduction 49 7.2 QCM verification with Aluminum Oxide ALD process 49 7.3 ALD process from the reference precursor 50 7.3.1 Introduction 50 7.3.2 TG analysis for Ni(amd) precursor 51 7.3.3 Thermal stability test for Ni(amd) 51 7.3.4 ALD process optimization 52 7.3.5 Film properties 54 7.4 Evaluating the novel Nickel precursors 55 7.4.1 Screening tests for precursor P1 55 7.4.2 Screening tests for precursor P2 62 7.4.3 Screening tests for precursor P3 66 7.4.4 Screening tests for precursor P4 70 7.4.5 Screening tests for precursor P5 72 7.5 Comparison of all nickel precursors used in this work 74 8 Conclusions and outlook 77 References 83 III Appendix 101 A Deposition temperature control & Ellipsometry model 102 B Gas flow plan 105