This thesis has evaluated how electrical surface resistance can be measured on conductive coated textiles using two different probes. The electrical surface resistance is a measurement for how difficult it is for current to flow through a material. For textiles, the surface resistance can be measured using four metallic plates, that measure the difference between current supply and voltage drop, this method is called a linear four-point probe.   There is no standard method for measuring the electrical surface resistance on conductive textiles. Therefore, it is not possible to compare textiles made by different producers. It is also not possible to decide what the true resistance is and as conductive textiles are becoming more popular to use, this has started to become a problem in the industry.   Two probes with electrodes of different dimensions were used to evaluate how different electrodes would affect the measured resistance. Measurements were conducted on conductive coated textiles with varying parameters, like coating thickness, sample size and textile construction, to show how the electrical resistance properties differ depending on what probe was used.   It was found that in contrast to other research on conductive textiles and collinear four-point probes, the probes used in this study could detect electrical anisotropic properties. The resistance was different depending on what angle it was measured in. This was found for both a thicker coating and a thinner one. It was also found that the probes could detect a correlation between the angular resistance and the textile construction used.   By measuring the resistance on small samples with the same dimension as the probes electrodes, the resistance was increased compared to when measurements were conducted on samples with dimensions significantly larger than the probes.   Furthermore, the results showed that increasing the distance between the inner electrodes of the probe decreased the measured resistance for both large and small samples. Additionally, it was found that by increasing the width of the outer electrodes the resistance was decreased, an increase in outer electrode width also made it easier to detect electrical anisotropic properties.

Les nanomatériaux suscitent depuis quelques décennies de plus en plus d’intérêt tant sur le plan des études fondamentales que sur celui des applications. Parmi ces nouveaux matériaux, les nanotubes de carbone ont attiré beaucoup d’attention au sein de la communauté scientifique à cause de leurs propriétés physiques remarquables. Les travaux présentés dans cette thèse, concernent l’élaboration et la caractérisation de composites solides à base de nanotubes de carbone. Le choix des matériaux s’est porté sur une matrice solide à base de Bromure de Potassium (KBr) et des nanotubes de carbone mono et multifeuillets (SWNT, MWNT). L’étude de ces composites concerne deux aspects : dans un premier temps, l’effet de la charge et de la nature des nanotubes de carbone sur les propriétés électriques et thermiques ont été étudiés. L’étude des propriétés thermiques a été réalisée à l’aide d’une technique photothermique, la photoacoustique, qui présente un grand avantage pour ce type de composites. L’évolution des propriétés thermiques en fonction de la charge a montré un comportement atypique, une augmentation puis une diminution, avec un maximum autour de 2% de charge en nanotubes. Un modèle physique permettant de décrire cette évolution a été proposé. Concernant les propriétés électriques, cette étude a permis de mettre en évidence le phénomène de percolation et d’en déterminer le seuil. Dans un deuxième temps, l’étude a porté sur l’influence du gaz environnant sur les propriétés thermiques et électriques, et sur l’éventuelle utilisation de ces composites comme capteurs de gaz. La caractérisation thermique en présence d’éthanol n’a pas permis de mettre en évidence un changement notable des propriétés thermiques des composites. En revanche, la caractérisation électrique a montré une bonne réponse à ce gaz. L’évolution de la sensibilité en fonction de la charge en nanotubes dans les composites a montré une augmentation pour des charges inférieures à 4% et une stabilisation au-delà. L’influence d’autre gaz comme le dioxyde d’azote et le toluène a été aussi étudié. La réponse électrique au dioxyde d’azote a montré une forte interaction du gaz avec les composites. La réponse au toluène n’a pas montré d’influence de ce gaz sur les propriétés électriques des composites à base de SWNT, cependant, dans le cas des composites à base de MWNT, une réponse électrique comparable à celle de l’éthanol a été observée. / In the recent decades, nanomaterials arouse a growing interest both in their fundamental studies and in their applications. Among these new materials, carbon nanotubes have attracted much attention within the scientific community because of their remarkable physical properties.The work presented in this thesis, involve the preparation and characterization of solid composites based on carbon nanotubes. A solid matrix containing potassium bromide (KBr) and carbon nanotubes, single and multiwalled (SWNT, MWNT) was chosen. The study of these composites involves two aspects: initially, the effect of the loading fraction and the nature of carbon nanotubes on the electrical and thermal properties were investigated. The study of thermal properties was carried out by a photothermal technique, the photoacoustic, which offers great advantages for this type of composites. The evolution of thermal properties according to the loading fraction of nanotubes showed an atypical behavior, an increase followed by a decrease, with a maximum around 2% of nanotubes loading fraction. A physical model describing this evolution has been proposed. Regarding the electrical properties, this study has highlighted the phenomenon of percolation and allowed the determination of the percolation threshold. In a second step, the study focused on the influence of surrounding gas on the thermal and electrical properties, and the possible use of these composites as gas sensors. The thermal characterization with ethanol did not reveal a significant change in thermal properties of composites. However, the electrical characterization showed a good response to this gas. The evolution of the sensitivity depending on the nanotubes loading fraction in the composites showed an increase for loads below 4% and a stabilization beyond this value. The influence of other gases such as nitrogen dioxide and toluene were also studied. The electrical response to nitrogen dioxide showed a strong interaction of the gas with composites. The response to toluene did not show any influence of this gas on the electrical properties of SWNT-based composites, however, in the case of MWNT-based composite, an electrical response similar to that of ethanol was observed.

Zinc Oxide falls under the classification of transparent conductive oxides. They typical optical transmittance of Zinc Oxide is 90% in the visible wavelength region. Though stoichiometric ZnO is an insulator, due to the presence of internal defects such as Zn interstitials and Oxygen vacancies, it exists as a n-type conductor. The other important property of ZnO which could be used by the optical field is its widebandgap. ZnO has a wide bandgap of 3.2eV -3.3eV. The additional advantage of being a direct bandgap semiconductor has increased the probability of using ZnO for short wavelength applications. These practical applications are directly related to the fabrication of homostructural p-n junctions. ZnO can be readily doped n-type. Doping ZnO P-type is very difficult due to its native defects and the self-compensation that occurs during doping. But when P-type doping is obtained in ZnO it could be used in various optical applications such as light emitting diodes and laser diodes. This provided the motivation for this research. Theoretical studies have proposed nitrogen as a suitable material to achieve p-type ZnO. Literature provides a set of conditions that could be used to improve the doping in ZnO films. In this research, a set of these conditions were used to implement p-type doping in ZnO films. A sputtering system with a setup to support two Torus - 5M guns was used to deposit the ZnO films. A codoping technique using an aluminium doped zinc oxide target was the first method. Though an improvement in the nitrogen incorporation was found in this method in the beginning, a further increase in the nitrogen pressure did not show further improvement. A co-sputtering technique of a 99.999% pure ZnO target and a 99.99% pure Zn metal target was the second method. The ZnO target was rf sputtered while the Zn target was dc sputtered using the two guns provided in the deposition chamber. The extra Zinc obtained from sputtering the metallic Zn target was used to improve the incorporation of nitrogen. The films were later deposited in an oxygen ambient where the excess oxygen was used to suppress the oxygen vacancies that act as hole killers during the doping process. Four point probe measurement and Keithley 900 series Hall equipment were used for the electrical characterization of the films. An ORIEL monochromator was used to optically characterize the films. Hitachi S-800 T EDAX analysis system was used to measure the atomic weight % of nitrogen incorporated in the ZnO:N films. Deposition at an oxygen partial pressure of 0.3mT and 0.8mT of nitrogen produced p-type ZnO films. These films showed a carrier absorption in the short wavelength region. The carrier concentration and the mobility obtained for these films were 4.0 x1016 cm-3 and 0.12 cm2 /V-s respectively.

Tato diplomová práce se věnuje výrobě vrstev grafitu/grafenu a meření jejich transportních vlastností v závislosti na relativní vlhkosti. Grafenové šupinky byly nanášeny pomocí mechanického odlupování . Pro kontaktování grafenových šupinek byla využita elektronová litografie a na pozorování byly využity optická mikroskopie, mikroskopie atomárních sil a elektronová mikroskopie. V práci jsou popsány jednotlivé kroky výroby, analýzy a měření transportních vlastností nanesených grafenových šupinek.

>Magister Scientiae - MSc / The growth of the Internet has led to many interesting developments for both educational and commercial purposes. In this project an attempt was made to use the Internet for a research purpose to facilitate the determination of the thermal stability of diffusion barriers. Another purpose of this thesis is to investigate the teaching and training use of the Internet through the development of online interactive tools and activities as well as materials. The training aspects are mentioned as it is hoped that this thesis can serve as a form of documentation of the use of the Internet, while the central part was the determination of thermal stability of TiN, TaN and TiW diffusion barriers on Ag.

>Magister Scientiae - MSc / The growth of the Internet has led to many interesting developments for both educational and commercial purposes. In this project an attempt was made to use the Internet for a research purpose to facilitate the determination of the thermal stability of diffusion barriers. Another purpose of this thesis is to investigate the teaching and training use of the Internet through the development of online interactive tools and activities as well as materials. The training aspects are mentioned as it is hoped that this thesis can serve as a form of documentation of the use of the Internet, while the central part was the determination of thermal stability of TiN, TaN and TiW diffusion barriers on Ag. The fact that most advanced instruments are computer driven or can be interfaced with a computer was exploited to set up a virtual laboratory facility through which sophisticated and scarce instrumentation can be remotely accessed. The major piece of equipment that forms part of the laboratory is a four-point probe furnace at Arizona State University, Tempe, USA. The Internet made it possible to use the facility to perform an online experiment to determine the effectiveness of different diffusion barriers for silver metallisation. This was accomplished by measuring the resistance of the different samples remotely over the Internet through the control of the four-point probe furnace at Arizona State University. Four types of analysis were used to determine the thermal stability of the diffusion barriers, namely the Scanning Electron Microscopy, Rutherford Backscattering Spectrometry, X-Ray Diffraction and resistivity measurements. Similar facilities exist at Oak Ridge National Laboratory, Tennessee, USA, where a range of different electron microscopes can be accessed remotely via the Internet. The measurements of the diffusion barriers form the main part of this work. However, the other aspects required for the use of the Internet in such a system, such as the development of a website to receive and upload scanning electron microscopy (SEM) images, the development of the virtual scanning electron microscope and the learning of the Virtual Reality Markup Language are also included.

Optically transparent carbon based nanomaterials including graphene and carbon nanotubes(CNTs) are promising candidates as transparent conductive electrodes due to their high electrical conductivity coupled with high optical transparency, can be flexed several times with minimal deterioration in their electronic properties, and do not require costly high vacuum processing conditions. CNTs are easily solution processed through the use of surfactants sodium dodecyl sulfate(SDS) and sodium cholate(SC). Allowing CNTs to be deposited onto transparent substrates through vacuum filtration, ultrasonic spray coating, dip coating, spin coating, and inkjet printing. However, surfactants are electrically insulating, limit chemical doping, and increase optical absorption thereby decreasing overall performance of electrodes. Surfactants can be removed through nitric acid treatment and annealing in an inert environment (e.g. argon). In this thesis, the impact of surfactant removal on electrode performance was investigated. Nitric acid treatment has been shown to p-dope CNTs and remove the surfactant SDS. However, nitric acid p-doping is naturally dedoped with exposure to air, does not completely remove the surfactant SC, and has been shown to damage CNTs by creating defect sites. Annealing at temperatures up to 1000°C is advantageous in that it removes insulating surfactants. However, annealing may also remove surface functional groups that dope CNTs. Therefore, there are competing effects when annealing CNT electrodes. The impacts on electrode performance were investigated through the use of conductive-tip atomic force microscopy, sheet resistance, and transmittance measurements. In this thesis, the potential of graphene CNT composite electrodes as high performing transparent electrodes was investigated. As-made and annealed graphene oxide CNT composites electrodes were studied. Finally, a chemical vapor deposition grown graphene CNT composite electrode was also studied.

Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft. / Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature.

Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft.:Lists of Abbreviations and Symbols VIII Lists of Figures and Tables XIV 1 Introduction 1 I Theoretical Part 3 2 Nickel and Nickel Oxides 4 2.1 Introduction and Existence 5 2.2 Material properties of Nickel and Nickel Oxide 5 2.3 Application in electronic industry 5 3 Atomic Layer Deposition 7 3.1 History 8 3.2 Definition 8 3.3 Features of thermal-ALD 8 3.3.1 ALD growth mechanism – an ideal view 8 3.3.2 ALD growth behaviour 10 3.3.3 Growth mode 11 3.3.4 ALD temperature window 11 3.4 Benefits and limitations 12 3.5 Precursor properties for thermal-ALD 13 3.6 ALD & CVD of Nickel – A literature survey 13 4 Metrology 17 4.1 Thermal analysis of precursors 18 4.2 Film and growth characterization 21 4.2.1 Quartz Crystal Microbalance 21 4.2.2 Spectroscopic Ellipsometry 24 4.2.3 X-Ray Photoelectron Spectroscopy 28 4.2.4 Scanning Electron Microscopy 29 4.2.5 X-Ray Reflectometry and X-Ray Diffraction 29 4.2.6 Four Point Probe Technique 20 5 Rapid Thermal Processing 32 5.1 Introduction 33 5.2 Basics of RTP 33 5.3 Nickel Silicides-A literature survey 33 II Experimental Part 36 6 Methodologies 37 6.1 Experimental setup 38 6.2 ALD process 41 6.2.1 ALD process types and substrate setups 41 6.2.2 Process parameters 41 6.3 Experimental procedure 42 6.3.1 Tool preparation 42 6.3.2 Thermal analysis and ALD experiments from nickel precursors 43 6.3.3 Data acquisition and evaluation 44 6.3.4 Characterization of film properties 46 7 Results and discussion 48 7.1 Introduction 49 7.2 QCM verification with Aluminum Oxide ALD process 49 7.3 ALD process from the reference precursor 50 7.3.1 Introduction 50 7.3.2 TG analysis for Ni(amd) precursor 51 7.3.3 Thermal stability test for Ni(amd) 51 7.3.4 ALD process optimization 52 7.3.5 Film properties 54 7.4 Evaluating the novel Nickel precursors 55 7.4.1 Screening tests for precursor P1 55 7.4.2 Screening tests for precursor P2 62 7.4.3 Screening tests for precursor P3 66 7.4.4 Screening tests for precursor P4 70 7.4.5 Screening tests for precursor P5 72 7.5 Comparison of all nickel precursors used in this work 74 8 Conclusions and outlook 77 References 83 III Appendix 101 A Deposition temperature control & Ellipsometry model 102 B Gas flow plan 105 / Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature.:Lists of Abbreviations and Symbols VIII Lists of Figures and Tables XIV 1 Introduction 1 I Theoretical Part 3 2 Nickel and Nickel Oxides 4 2.1 Introduction and Existence 5 2.2 Material properties of Nickel and Nickel Oxide 5 2.3 Application in electronic industry 5 3 Atomic Layer Deposition 7 3.1 History 8 3.2 Definition 8 3.3 Features of thermal-ALD 8 3.3.1 ALD growth mechanism – an ideal view 8 3.3.2 ALD growth behaviour 10 3.3.3 Growth mode 11 3.3.4 ALD temperature window 11 3.4 Benefits and limitations 12 3.5 Precursor properties for thermal-ALD 13 3.6 ALD & CVD of Nickel – A literature survey 13 4 Metrology 17 4.1 Thermal analysis of precursors 18 4.2 Film and growth characterization 21 4.2.1 Quartz Crystal Microbalance 21 4.2.2 Spectroscopic Ellipsometry 24 4.2.3 X-Ray Photoelectron Spectroscopy 28 4.2.4 Scanning Electron Microscopy 29 4.2.5 X-Ray Reflectometry and X-Ray Diffraction 29 4.2.6 Four Point Probe Technique 20 5 Rapid Thermal Processing 32 5.1 Introduction 33 5.2 Basics of RTP 33 5.3 Nickel Silicides-A literature survey 33 II Experimental Part 36 6 Methodologies 37 6.1 Experimental setup 38 6.2 ALD process 41 6.2.1 ALD process types and substrate setups 41 6.2.2 Process parameters 41 6.3 Experimental procedure 42 6.3.1 Tool preparation 42 6.3.2 Thermal analysis and ALD experiments from nickel precursors 43 6.3.3 Data acquisition and evaluation 44 6.3.4 Characterization of film properties 46 7 Results and discussion 48 7.1 Introduction 49 7.2 QCM verification with Aluminum Oxide ALD process 49 7.3 ALD process from the reference precursor 50 7.3.1 Introduction 50 7.3.2 TG analysis for Ni(amd) precursor 51 7.3.3 Thermal stability test for Ni(amd) 51 7.3.4 ALD process optimization 52 7.3.5 Film properties 54 7.4 Evaluating the novel Nickel precursors 55 7.4.1 Screening tests for precursor P1 55 7.4.2 Screening tests for precursor P2 62 7.4.3 Screening tests for precursor P3 66 7.4.4 Screening tests for precursor P4 70 7.4.5 Screening tests for precursor P5 72 7.5 Comparison of all nickel precursors used in this work 74 8 Conclusions and outlook 77 References 83 III Appendix 101 A Deposition temperature control & Ellipsometry model 102 B Gas flow plan 105