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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
81

Efeitos polarônicos em estruturas semicondutoras em uma e duas dimensões. / Polaronic effects in one and two dimensional semiconductor heterostructures.

Osorio, Francisco Aparecido Pinto 18 May 1988 (has links)
Neste trabalho estudamos os efeitos polarônicos sobre um gás de elétrons quase bidimensional presente em heteroestruturas semicondutoras (heterojunções e poços quânticos de GaAs-AlGaAs) sob a ação de um campo magnético uniforme aplicado na direção perpendicular a interface, através de teoria de perturbação de segunda ordem. Calculamos a massa ciclotrônica considerando a interação elétron-fonon LO e os efeitos de blindagem e não parabolicidade da banda de condução do GaAs. Os resultados obtidos são comparados com recentes dados experimentais de ressonância ciclotronica e apresentam ótima concordância. Estudamos também a energia de ligação do estado fundamental de uma impureza hidrogenóide localizada no interior de um fio quântico retangular de GaAs envolvido por AlGaAs, como função das dimensões do fio para varias alturas das barreiras de variacional, usando várias formas para a função de onda tentativa do sistema. Consideramos também a contribuição polarônica a energia de ligação. Comparamos nossos resultados com recentes cálculos da energia de ligação, efetuados por outros autores. / In this work we study the polaronic effects on the two dimensional electron gas present in semiconductor heteroestructures (GaAs-AlGaAs heterojunctions and quantum wells) when a uniform magnetic field is applied perpendicular to the interface, using second order perturbation theory. By taking into account the effect of nonparabolicity and screening of the electron-fonon LO interaction the calculated effective mass is compared to the recent experimental date. Good agreement is found with available date. The binding energies of a hydrogenic impurity located in quantum well wires of GaAs surrounded by AlGaAs are calculated as a functions of the size of the wire for several values of the heights of the potential barriers and diferent positions of the impurity inside the wire. We follow a variational approach choosing several trial wave functions for the ground state. The polaronic contribution to the binding energy is considered. We compare our results with those previously obtained by other authors.
82

Teoria de funÃÃes de Green para uma impureza isolada localizada intersticialmente em sistemas ferromagnÃticos

MÃrcio de Melo Freire 15 February 2017 (has links)
Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico / Um formalismo da funÃÃo de Green à usado para calcular o espectro de excitaÃÃes associadas com uma impureza magnÃtica localizada intersticialmente em diferentes estruturas ferromagnÃticas descritas pelo modelo de Ising e de Heisenberg. No capÃtulo 3, descrevemos um ferromagneto de rede cÃbica simples semi-infinita atravÃs do modelo de Ising. Neste caso, as excitaÃÃes nÃo-ressonantes (isto Ã, os modos de defeito fora da regiÃo das ondas de spin de volume e de superfÃcie) e as excitaÃÃes ressonantes (os modos de defeito dentro da regiÃo das ondas de spin de volume) sÃo calculadas numericamente para a fase de alta-temperatura. Duas situaÃÃes sÃo analisadas, dependendo da posiÃÃo da impureza em relaÃÃo a seus vizinhos: a impureza està na superfÃcie; a impureza està na regiÃo de volume. Nos demais capÃtulos, usamos o modelo de Heisenberg/Ising (onde passamos do modelo de Heisenberg para o de Ising atravÃs do controle de um parÃmetro) para descrever os seguintes sistemas: ferromagneto de rede quadrada infinita (capÃtulo 4), ferromagneto de rede quadrada centrada infinita (capÃtulo 5), ferromagneto de rede cÃbica de corpo centrado infinita (capÃtulo 6) e rede favo de mel infinita (capÃtulo 7), todos contendo uma impureza magnÃtica localizada intersticialmente. Nos trÃs primeiros casos, sÃo calculados apenas os modos de defeito acima da banda de volume do material puro (modos Ãpticos). No capÃtulo 7, sÃo analisados apenas os modos de defeito abaixo da banda de volume do material puro (modos acÃsticos).
83

Música impura: a noção de presença na criação e performance sonora / -

Gregory Ribeiro Silva 15 December 2016 (has links)
A pesquisa tem o intuito de explorar a noção de \"Presença\", que é amplamente estudada no campo das artes da cena e em performance art. Essa noção é emancipada a um dispositivo conceitual criativo nas áreas da música e de arte sonora. Passando por questionamentos acerca da performance musical, contrapõe o conceito de obra à ideia de impureza, que surge como um território propício para a investigação do conceito de presença. Para isso, é levantada uma definição desse conceito, balizada em estudos teatrais e filosóficos, que possibilitam a abertura de um campo de estudos em criação e performance sonora. Dentro desse contexto, são feitas reflexões sobre artistas que buscam relacionar seus trabalhos a elementos extramusicais, e que, de alguma forma, tangenciam o conceito de presença que fora delineado. / The research aims to explore the notion of \"presence,\" which is widely studied in the stage arts and performance art. This notion is emancipated to a creative conceptual device in the areas of music and sound art. Through discusses about the musical performance, the research opposes the concept of work to the idea of impurity, which appears as a breeding ground for the investigation of the concept of presence. Therefore, it is raised a definition of this concept, rooted by theatrical and philosophical studies, which allows the opening of a field of sound studies about performance and composition. In this context, reflections are made about artists who seek to relate their work to extramusical elements, and that, somehow, are related to the concept of presence that had been outlined by this research.
84

Mechanical behavior of alternative multicrystalline silicon for solar cells

Orellana Pérez, Teresa 15 July 2013 (has links) (PDF)
The usage of more inexpensive silicon feedstock for the crystallization of multicrystalline silicon blocks promises cost reduction for the photovoltaic industry. Less expensive substrates made out of metallurgical silicon (MG-Si) are used as a mechanical support for the epitaxial solar cell. Moreover, conventional inert solar cells can be produced from up-graded metallurgical silicon (UMG-Si). This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Solar cell processing steps can also exert a change in the values of mechanical strength of processed multicrystalline silicon wafers until the fabrication of a solar cell. Bending tests, fracture toughness and dynamic elastic modulus measurements are performed in this work in order to research the mechanical behavior of multicrystalline silicon crystallized with different qualities of silicon feedstock. Bending tests and residual stress measurements allows the quantification of the mechanical strength of the wafers after every solar cell processing step. The experimental results are compared with theoretical models found in the classical literature about the mechanical properties of ceramics. The influence of second phase particles and thermal processes on the mechanical strength of silicon wafers can be predicted and analyzed with the theoretical models. Metals like Al and Cu can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, amorphous silicon oxide particles (SiOx) lower the mechanical strength of multicrystalline silicon due to thermal residual stresses and elastic mismatch with silicon. Silicon nitride particles (Si3N4) reduce fracture toughness and cause failure by radial cracking in its surroundings due to its thermal mismatch with silicon. Finally, silicon carbide (SiC) and crystalline silicon oxide (SiOx) introduce thermal residual stresses but can have a toughening effect on the silicon matrix and hence, increase the mechanical strength of silicon wafers if the particles are smaller than a certain size. The surface of as-cut wafers after multi-wire sawing presents sharp micro-cracks that control their mechanical behavior. Subsequent removal of these micro-cracks by texture or damage etching approximately doubles the mechanical strength of silicon wafers. The mechanical behavior of the wafers is then governed by defects like cracks and particles formed during the crystallization of multicrystalline silicon blocks. Further thermal processing steps have a minor impact on the mechanical strength of the wafers compared to as-cut wafers. Finally, the mechanical strength of final solar cells is comparable to the mechanical strength of as-cut wafers due to the high residual thermal stress introduced after the formation of the metallic contacts which makes silicon prone to crack.
85

Analysis of GaN/AlxGa1−xN Heterojunction Dual-Band Photodetectors Using Capacitance Profiling Techniques

Byrum, Laura E. 01 December 2009 (has links)
Capacitance-voltage-frequency measurements on n+-GaN/AlxGa1−xN UV/IR dual-band detectors are reported. The presence of shallow Si-donor, deep Si-donor, and C-donor/N-vacancy defect states were found to significantly alter the electrical characteristics of the detectors. The barrier Al fraction was found to change the position of the interface defect states relative to the Fermi level. The sample with Al fraction of 0.1 shows a distinct capacitance-step and hysteresis, which is attributed to C-donor/N-vacancy electron trap states located above the Fermi level (200 meV) at the heterointerface; whereas, the sample with Al fraction of 0.026 shows negative capacitance and dispersion, indicating C-donor/N-vacancy and deep Si-donor defect states located below the Fermi level (88 meV). When an i-GaN buffer layer was added to the structure, an anomalous high-frequency capacitance peak was observed and attributed to resonance scattering due to hybridization of localized Si-donor states in the band gap with conduction band states at the i-GaN/n+-GaN interface.
86

Economics Of Carbon Dioxide Sequestration In A Mature Oil Field

Rasheed, Ali Suad 01 December 2008 (has links) (PDF)
To meet the goal of atmospheric stabilization of carbon dioxide (CO2 ) levels a technological transformation should occur in the energy sector. One strategy to achieve this is carbon sequestration. Carbon dioxide can be captured from industrial sources and sequestered underground into depleted oil and gas reservoirs. CO2 injected into geological formations, such as mature oil reservoirs can be effectively trapped by hydrodynamical (structural), solution, residual (capillary) and mineral trapping methods. In this work, a case study was conducted using CMG-STARS software for CO2 sequestration in a mature oil field. History matching was done with the available production, bottom hole pressures and water cut data to compare the results obtained from the simulator with the field data. Next, previously developed optimization methods were modified and used for the case of study. The main object of the optimization was to determine the optimal location, number of injection wells, injection rate, injection depth and pressure of wells to maximize the total trapped amount of CO2 while enhancing the amount of oil recovered. A second round of simulations was carried out to study the factors that affect the total oil recovery and CO2 &not / storage amount. These include relative permeability end points effect, hysteresis effect, fracture spacing and additives of simultaneous injection of carbon dioxide with CO and H2S. Optimization runs were carried out on a mildly heterogeneous 3D model for variety of cases. When compared with the base case, the optimized case led to an increase of 20% in the amount of oil that is recovered / and more than 95% of the injected CO2 was trapped as solution gas on and as an immobile gas. Finally, an investigation of the economical feasibility was accomplished. NPV values for various cases were obtained, selected and studied yielding in a number of cases that are found to be applicable for the field of concern.
87

Spectral functions of low-dimensional quantum systems

Dargel, Piet 30 November 2012 (has links)
No description available.
88

Between honor and shame :|bmartyrdom in 2 Maccabees 6-7 within the socio-cultural arena

Hefer, Barend Joachim January 2012 (has links)
The study, “Between honor and shame: Martyrdom in 2 Maccabees 6-7 within the socio-cultural arena”, presents a look at how the community viewed martyrdom in 2 Maccabees 6:18-7:42 from the perspective of honor and shame. The chief objective is to determine whether or not the community supported or challenged the notion of the martyrs’ death being either honorable or shameful. In order to reach a satisfactory conclusion to this objective, this study set as goals the identification of key themes which shed light upon the views of the community in regard to the martyrs, as well as the investigation of the community’s understanding of honor and shame found in 2 Maccabees 6:18-7:42. This study incorporates a contextual analytical method comprising of an analysis of sociocultural vocabulary, an analysis of the socio-cultural vocabulary within the Greek text of 2 Maccabees 6:18-7:42 and a synthesis of the analysis of both the socio-cultural and the Greek context. As criteria for the study of the socio-cultural context the aspects of sacred-profane, pure-impure, the patron-client relationship and the relationship between individual and group(s) are implemented. Core-findings of this study may be divided into two main categories: evidence in defence of an honorable conduct during death, and evidence in defence of the dishonorable manner of death. Evidence in defence of honorable conduct during death, are: • The martyrs remain completely loyal and devoted to God (their Chief-Patron), His laws and • the customs of the forefathers. • They are portrayed as being bodily whole. • They safeguard their set-apartness. • They remain pure – especially in the ritualistic sense. • As individuals belonging to the collected identity of various groups, the martyrs prove themselves loyal and honorable. Evidence in defence for the dishonorable manner in which the martyrs die, are: • Torture was deemed disgraceful by the community and would therefore degrade honor. • Mutilation went into the very fabric of the wholeness of the body by destroying the bodily unity, thereby disqualifying a person to come into the realm of the sacred. • Certain members of the community would regard the martyrs’ rejection of the lesser patrons’ favor as disrespectful and therefore as dishonorable conduct. Despite this evidence, it is still found that the community could remain undecided on how to judge the martyrs and martyrdom. Therefore, it is proposed, and successfully implemented, that an emotional argument might be the key to tipping the scale toward viewing the martyrs and martyrdom as honorable. It must therefore be concluded that the community would have indeed challenged the notion of martyrdom being honorable, for torture and mutilations in themselves, were regarded as being disgraceful. Yet the community would have been persuaded to accept the honor of the martyrs because of their honorable conduct and the emotional appeal made by the author of Maccabees. / Thesis (MA (Greek))--North-West University, Potchefstroom Campus, 2013.
89

Estudo de materiais adsorvedores para o preparo de geradores de Ge-68/Ga-68 / Studies of adsorber materials for preparing sup(68)Ge/sup(68)Ga generators

BRAMBILLA, TANIA de P. 09 October 2014 (has links)
Made available in DSpace on 2014-10-09T12:41:57Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:43Z (GMT). No. of bitstreams: 0 / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
90

Efeitos polarônicos em estruturas semicondutoras em uma e duas dimensões. / Polaronic effects in one and two dimensional semiconductor heterostructures.

Francisco Aparecido Pinto Osorio 18 May 1988 (has links)
Neste trabalho estudamos os efeitos polarônicos sobre um gás de elétrons quase bidimensional presente em heteroestruturas semicondutoras (heterojunções e poços quânticos de GaAs-AlGaAs) sob a ação de um campo magnético uniforme aplicado na direção perpendicular a interface, através de teoria de perturbação de segunda ordem. Calculamos a massa ciclotrônica considerando a interação elétron-fonon LO e os efeitos de blindagem e não parabolicidade da banda de condução do GaAs. Os resultados obtidos são comparados com recentes dados experimentais de ressonância ciclotronica e apresentam ótima concordância. Estudamos também a energia de ligação do estado fundamental de uma impureza hidrogenóide localizada no interior de um fio quântico retangular de GaAs envolvido por AlGaAs, como função das dimensões do fio para varias alturas das barreiras de variacional, usando várias formas para a função de onda tentativa do sistema. Consideramos também a contribuição polarônica a energia de ligação. Comparamos nossos resultados com recentes cálculos da energia de ligação, efetuados por outros autores. / In this work we study the polaronic effects on the two dimensional electron gas present in semiconductor heteroestructures (GaAs-AlGaAs heterojunctions and quantum wells) when a uniform magnetic field is applied perpendicular to the interface, using second order perturbation theory. By taking into account the effect of nonparabolicity and screening of the electron-fonon LO interaction the calculated effective mass is compared to the recent experimental date. Good agreement is found with available date. The binding energies of a hydrogenic impurity located in quantum well wires of GaAs surrounded by AlGaAs are calculated as a functions of the size of the wire for several values of the heights of the potential barriers and diferent positions of the impurity inside the wire. We follow a variational approach choosing several trial wave functions for the ground state. The polaronic contribution to the binding energy is considered. We compare our results with those previously obtained by other authors.

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