Thesis submitted in fulfillment of the requirements for the degree Master of Technology:Electrical Engineering in the Faculty ofEngineering at the Cape Peninsula University of Technology Supervisor:Prof MTE KAHN Bellville December 2013 / The work presented in this thesis consists of the simulation of a cooling plant for a future mobile satellite ground station in order to minimize the effects of the thermal noise and to maintain comfort temperatures onboard the same station. Thermal problems encountered in mobile satellite ground stations are a source of poor quality signals and also of the premature destruction of the front end microwave amplifiers. In addition, they cause extreme discomfort to the mission operators aboard the mobile station especially in hot seasons. The main concerns of effective satellite system are the quality of the received signal and the lifespan of the front end low noise amplifier (LNA). Although the quality of the signal is affected by different sources of noise observed at various stages of a telecommunication system, thermal noise resulting from thermal agitation of electrons generated within the LNA is the predominant type. This thermal noise is the one that affects the sensitivity of the LNA and can lead to its destruction. Research indicated that this thermal noise can be minimized by using a suitable cooling system. A moveable truck was proposed as the equipment vehicle for a mobile ground station. In the process of the cooling system development, a detailed quantitative study on the effects of thermal noise on the LNA was conducted. To cool the LNA and the truck, a 2 kW solar electric vapor compression system was found the best for its compliance to the IEA standards: clean, human and environment friendly. The principal difficulty in the development of the cooling system was to design a photovoltaic topology that would ensure the solar panels were always exposed to the sun, regardless the situation of the truck. Simulation result suggested that a 3.3 kW three sided pyramid photovoltaic topology would be the most effective to supply the power to the cooling system. A battery system rated 48 V, 41.6 Ah was suggested to be charged by the PV system and then supply the power to the vapor compression system. The project was a success as the objective of this project has been met and the research questions were answered.

The ever increasing diversity in communication systems has created a demand for constant improvements in receiver components. This thesis describes the design and characterisation of front-end receiver components for various challenging applications, including characterisation of low noise foundry processes, LNA design and multi-band antenna design. It also includes a new theoretical analysis of noise coupling in low noise phased array receivers.In LNA design much depends on the choice of the optimum active devices. A comprehensive survey of the performance of low noise transistors is therefore extremely beneficial. To this end a comparison of the DC, small-signal and noise behaviours of 10 state-of-the-art GaAs and InP based pHEMT and mHEMT low noise processes has been carried out. Their suitability in LNA designs has been determined, with emphasis on the SKA project. This work is part of the first known detailed investigation of this kind. Results indicate the superiority of mature GaAs-based pHEMT processes, and highlight problems associated with the studied mHEMT processes. Two of the more promising processes have then been used to design C-band and UHF-band MMIC LNAs. A new theoretical analysis of coupled noise between antenna elements of a low noise phased array receiver has been carried out. Results of the noise wave analysis, based on fundamental principles of noisy networks, suggest that the coupled noise contribution to system noise temperatures should be smaller than had previously been suggested for systems like the SKA. The principles are applicable to any phased array receiver. Finally, a multi-band antenna has been designed and fabricated for a severe operating environment, covering the three extremely crowded frequency bands, the 2.1 GHz UMTS, the 2.4 GHz ISM and the 5.8 GHz ISM bands. Measurements have demonstrated excellent performance, exceeding that of equivalent commercial antennas aimed at similar applications.

This thesis deals with a theoretical analysis of the basic parameters of receivers, input circuit architecture and signal digitization. According to the specified assignment it is outlined block scheme of front end for software receiver with specified components and the total bilance is calculated. Individual parts of the system are designed and realized. This is a set of four input filters for bandwidths: short waves up to 30 MHz, 87,5-108 MHz, 144-148 MHz and 174-230 MHz. The main point of design is a circuit containing a low-noise amplifiers, switches, and two amplifiers with adjustable amplification. Mainly are used integrated circuits from Analog Devices corporation. To control the various switches and adjustable amplifiers was designed a separate panel, which is connected to the main circuit via a cable. In the last phase was the whole system and its components subjected to measurements. Thanks to a number of mounted SMA connectors it is possible to measure different parts of the system and we are able to modify it partially.

A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The inherent atmospheric attenuation at 60 GHz due to oxygen absorption makes the frequency range ideal for short distance communication networks. For these mm-wave wireless networks, the low noise amplifier (LNA) is a critical subsystem determining the receiver performance i.e., the noise figure (NF) and receiver sensitivity. It however proves challenging to realise high performance mm-wave LNAs in a silicon (Si) complementary metal-oxide semiconductor (CMOS) technology. The mm-wave passive devices, specifically on-chip inductors, experience high propagation loss due to the conductivity of the Si substrate at mm-wave frequencies, degrading the performance of the LNA and subsequently the performance of the receiver architecture. The research is aimed at realising a high performance mm-wave LNA in a Si BiCMOS technology. The focal points are firstly, the fundamental understanding of the various forms of losses passive inductors experience and the techniques to address these issues, and secondly, whether the performance of mm-wave passive inductors can be improved by means of geometry optimising. An associated hypothesis is formulated, where the research outcome results in a preferred passive inductor and formulates an optimised passive inductor for mm-wave applications. The performance of the mm-wave inductor is evaluated using the quality factor (Q-factor) as a figure of merit. An increased inductor Q-factor translates to improved LNA input and output matching performance and contributes to the lowering of the LNA NF. The passive inductors are designed and simulated in a 2.5D electromagnetic (EM) simulator. The electrical characteristics of the passive structures are exported to a SPICE netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 13μ-m SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures as a benchmark, while the second LNA, identical to the first, replaces one inductor with the optimised inductor. Experimental verification allows complete characterization of the passive inductors and the performance of the LNAs to prove the hypothesis. According to the author's knowledge, the slow-wave coplanar waveguide (S-CPW) achieves a higher Q-factor than microstrip and coplanar waveguide (CPW) transmission lines at mm-wave frequencies implemented for the 130 nm SiGe BiCMOS technology node. In literature, specific S-CPW transmission line geometry parameters have previously been investigated, but this work optimises the signal-to-ground spacing of the S-CPW transmission lines without changing the characteristic impedance of the lines. Optimising the S-CPW transmission line for 60 GHz increases the Q-factor from 38 to 50 in simulation, a 32 % improvement, and from 8 to 10 in measurements. Furthermore, replacing only one inductor in the output matching network of the LNA with the higher Q-factor inductor, improves the input and output matching performance of the LNA, resulting in a 5 dB input and output reflection coefficient improvement. Although a 5 dB improvement in matching performance is obtained, the resultant noise and gain performance show no significant improvement. The single stage LNAs achieve a simulated gain and NF of 13 dB and 5.3 dB respectively, and dissipate 6 mW from the 1.5 V supply. The LNA focused to attain high gain and a low NF, trading off linearity and as a result obtained poor 1 dB compression of -21.7 dBm. The LNA results are not state of the art but are comparable to SiGe BiCMOS LNAs presented in literature, achieving similar gain, NF and power dissipation figures. / Dissertation (MEng)--University of Pretoria, 2012. / Electrical, Electronic and Computer Engineering / unrestricted

<p>Пасивна индуктивна компонента и нискошумни појачавач у технологији<br />монолитних интегрисаних кола за широкопојасне примјене пројектовани<br />су, фабриковани и карактерисани. Приликом пројектовања индуктора<br />изабрана је топологија меандар, а осим софтверских алата за<br />пројектовање интегрисаних кола, кориштен је и симулатор<br />електромагнетског поља. Осим карактеризације основних параметара,<br />пажња је посвећена и анализи процесних и температурских варијација.<br />Спроведена је механичка карактеризација материјала од којег се састоји<br />заштитни слој фабрикованог интегрисаног кола. Нискошумни појачавач<br />пројектован је као први степен пријемника широкопојасне технологије, а<br />карактеризацијом је потврђена успјешност поступка.</p> / <p>Pasivna induktivna komponenta i niskošumni pojačavač u tehnologiji<br />monolitnih integrisanih kola za širokopojasne primjene projektovani<br />su, fabrikovani i karakterisani. Prilikom projektovanja induktora<br />izabrana je topologija meandar, a osim softverskih alata za<br />projektovanje integrisanih kola, korišten je i simulator<br />elektromagnetskog polja. Osim karakterizacije osnovnih parametara,<br />pažnja je posvećena i analizi procesnih i temperaturskih varijacija.<br />Sprovedena je mehanička karakterizacija materijala od kojeg se sastoji<br />zaštitni sloj fabrikovanog integrisanog kola. Niskošumni pojačavač<br />projektovan je kao prvi stepen prijemnika širokopojasne tehnologije, a<br />karakterizacijom je potvrđena uspješnost postupka.</p> / <p>A passive inductive component and a low-noise amplifier are designed,<br />fabricated in standard monolithic CMOS technology and characterized, both<br />intended for wideband operation. For the design of the inductor, meander<br />topology is chosen. Along with the integrated circuit design tools,<br />electromagnetic field simulator is used. Besides the standard parameter<br />characterization, special attention is dedicated to the analysis of process and<br />temperature variations. Furthermore, mechanical characterization of the<br />material that comprises the protection layer has been undertaken. Low-noise<br />amplifier is designed as the first stage of an ultra wideband receiver and the<br />results show that the circuit is successfully designed.</p>

Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. This becomes relevant in quantum computers operated at cryogenic temperatures as LNAs constitutes the 4 K quantum bit (qubit) readout signal amplification chain. The goal of this project is to investigated the superconducting element niobium (Nb) as contact material for indium phosphide (InP) high-electron-mobility transistors (HEMTs), being the active component in cryogenic high-frequency LNAs. For contact and barrier resistance determination, test structures were fabricated and utilized according to the transfer length method(TLM) and the recess TLM respectively. Measurements were performed in room temperature as well as in cryogenic temperatures below and above Nb’s bulk transition temperature of 9.25 K. The results show low-resistance Nb-based ohmic contacts for n-In0.65Ga0.35As, with the non-alloyed Nb(50 nm)/Au(100 nm) stack yielding a room temperature contact resistivity of (9.4 ± 0.5) × 10−8 Ωcm2. For all contacts the contact resistivity increased moving to cryogenic temperatures, as expected when electron occupation of high-energy states decreases. At cryogenic temperatures nosuperconducting transition was observed, attributed to the Nb layer thickness being roughly equal to its coherence length. Considering the effective barrier resistance, the Ni/Ge/Au/Nb/Au alloyed contact had the lowest room temperature resistance, reporting 143 Ω µm. In cryogenic temperatures the effective barrier resistance unexpectedly decreased in all contacts. The Nb/Au contact showed the best cryogenic performance, with a barrier resistance of 28 − 37 Ω µm. This indicates great potential for non-alloyed Nb/Au contacts in cryogenic InP HEMTs. / Alla halvledarkomponenter, som dioder och transistorer, har ohmska kontakter. Att sänka kontaktresistansen hos de ohmska kontakterna är ett sätt att höja prestandan hos en komponent. Särskilt gäller detta för lågbrusförstärkare, som har en brustemperatur som minskar både direkt och indirekt med avtagande kontaktresistans. För kvantdatorer som måste kylas till kryogena temperaturer för att fungera är detta relevant eftersom förstärkningen av utläsningssignalen från kvantbitar sker via lågbrusförstärkare vid 4 K. Målet för detta examensprojekt är att undersöka ohmska kontakter baserade på det supraledande materialet niobium (Nb) i indiumfosfidbaserade högelektronmobilitetstransistorer, som är den aktivakomponenten i kryogena högfrekvens-lågbrusförstärkare. För bestämning av kontaktoch barriärresistans producerades teststrukturer enligt Transfer Length-metoden (TLM) respektive etsad TLM. Mätningar genomfördes i rumstemperatur samt vid kryogena temperaturer både över och under niobiumets kritiska temperatur på 9.25 K. Resultatet visar låg kontaktresistans för Nb-baserade ohmska kontakter på n-In0.65Ga0.35As. Den icke-legerade Nb(50 nm)/Au(100 nm)-kontakten hade en kontaktresistivitet på (9.4 ± 0.5) × 10−8 Ωcm2 . Vid kryogena temperaturer ökade kontaktresistansen för samtliga Nb-baserade kontakter, vilket är förväntat då färre elektroner fyller högenergitillstånd. Inget supraledande tillstånd observerades vid kryogena temperaturer, vilket kan förklaras av att tjockleken på niobiumlagret var ungefär lika med dess koherenslängd. Lägst barriärresistans vid rumstemperatur hade den legerade Ni/Ge/Au/Nb/Au-kontakten, med ett värde på 143 Ω µm. Vid kryogena temperaturer skedde en oväntad minskning hos barriärsresistansen hos samtliga kontakter, där den lägst barriärsresistans uppmättes på den icke-legerade Nb/Au-kontakten, 28 − 37 Ω µm. Slutsatsen som dras är att det finns stor potential för användning av icke-legerade Nb/Au-kontakter för kryogena lågbrusförstärkare baserade på indiumfosfid.

The prevalence of wireless standards and the introduction of dynamic standards/applications, such as software-defined radio, necessitate the next generation wireless devices that integrate multiple standards in a single chip-set to support a variety of services. To reduce the cost and area of such multi-standard handheld devices, reconfigurability is desirable, and the hardware should be shared/reused as much as possible. This research proposes several novel circuit topologies that can meet various specifications with minimum cost, which are suited for multi-standard applications. This doctoral study has two separate contributions: 1. The low noise amplifier (LNA) for the RF front-end; and 2. The analog-to-digital converter (ADC). The first part of this dissertation focuses on LNA noise reduction and linearization techniques where two novel LNAs are designed, taped out, and measured. The first LNA, implemented in TSMC (Taiwan Semiconductor Manufacturing Company) 0.35Cm CMOS (Complementary metal-oxide-semiconductor) process, strategically combined an inductor connected at the gate of the cascode transistor and the capacitive cross-coupling to reduce the noise and nonlinearity contributions of the cascode transistors. The proposed technique reduces LNA NF by 0.35 dB at 2.2 GHz and increases its IIP3 and voltage gain by 2.35 dBm and 2dB respectively, without a compromise on power consumption. The second LNA, implemented in UMC (United Microelectronics Corporation) 0.13Cm CMOS process, features a practical linearization technique for high-frequency wideband applications using an active nonlinear resistor, which obtains a robust linearity improvement over process and temperature variations. The proposed linearization method is experimentally demonstrated to improve the IIP3 by 3.5 to 9 dB over a 2.5–10 GHz frequency range. A comparison of measurement results with the prior published state-of-art Ultra-Wideband (UWB) LNAs shows that the proposed linearized UWB LNA achieves excellent linearity with much less power than previously published works. The second part of this dissertation developed a reconfigurable ADC for multistandard receiver and video processors. Typical ADCs are power optimized for only one operating speed, while a reconfigurable ADC can scale its power at different speeds, enabling minimal power consumption over a broad range of sampling rates. A novel ADC architecture is proposed for programming the sampling rate with constant biasing current and single clock. The ADC was designed and fabricated using UMC 90nm CMOS process and featured good power scalability and simplified system design. The programmable speed range covers all the video formats and most of the wireless communication standards, while achieving comparable Figure-of-Merit with customized ADCs at each performance node. Since bias current is kept constant, the reconfigurable ADC is more robust and reliable than the previous published works.