Les dispositifs électrochromes sont des dispositifs qui permettent de moduler la réflexion ou la transmission de la lumière. Ils recouvrent une grande variété d’applications dans le domaine du visible (vitrages intelligents) et dans le domaine de l’infrarouge (protection thermique des satellites et discrétion optique infrarouge). Les travaux présentés dans ce manuscrit répondent essentiellement à une problématique visant à élaborer un dispositif électrochrome tout solide à émissivité infrarouge variable par un procédé unique de pulvérisation cathodique magnétron. Une nouvelle architecture d’empilement avec une électrode de travail monocouche bi fonctionnelle a été choisie pour réunir les propriétés apportées classiquement par deux couches ou plus sur le haut des empilements électrochromes. Cette nouvelle architecture a nécessité la mise en place d’un procédé de dépôt original de pulvérisation cathodique réactive hydratée. Ce procédé a permis d’obtenir une électrode monocouche à base de trioxyde de tungstène réunissant les propriétés optiques et électroniques souhaitées. Il a également permis de déposer les autres couches de l’empilement, la contre-électrode à base de trioxyde de tungstène et les électrolytes solides conducteurs protoniques à base d’oxyde de tantale ou de zirconium. L’étude de l’ajout d’une couche d’encapsulation à base de dioxyde de cérium a également été menée. Cette architecture a permis d’obtenir un empilement électrochrome tout solide fonctionnel. Ce dispositif complet ainsi élaboré présente de bonnes propriétés optiques dans l’infrarouge en terme de modulation d’émissivité dans les bandes spectrales d’intérêt, à savoir 13 % en bande II et 31 % en bande III. / Electrochromic materials are devices for modulating the reflection or transmission of light. They cover a wide variety of applications in the visible range (smart windows) and the infrared range (thermal protection for satellites and optical infrared discretion). The works presented in this manuscript were essentially responding to the problem of developping an all solid electrochromic device with a variable infrared emissivity by a single process of magnetron sputtering. A new stacking architecture with a working bi functional monolayer electrode was chosen to bring the properties conventionally made by two or more layers on top of electrochromic device. This new architecture has required the establishment of an original deposit process of hydrated reactive sputtering. This process yielded a monolayer electrode based on tungsten trioxide combining the desired optical and electronic properties. It allowed to deposit other layers of the stack, the counter electrode based on tungsten trioxide and the proton conductive solid electrolyte based on tantalum or zirconium oxide. The study of the addition of an encapsulation layer based on cerium dioxide was also conducted. This architecture has resulted in a functional all-solid electrochromic stack. The complete device thus prepared exhibits good optical properties in the infrared emissivity in terms of modulation and in particular in the spectral bands of interest, namely 13 % in MW and 31 % in LW.

Le développement de photocatalyseurs en couches minces supportées constitue un intérêt majeur autorisant une séparation efficace des produits de réaction, en dépit d’une réduction de leur surface spécifique par rapport à des nanopoudres du même matériau. La synthèse de revêtements de TiO2 par pulvérisation cathodique magnétron en condition réactive fait l’objet de recherches intensives. Cette technique permet de contrôler, à travers les paramètres d’élaboration, la structure et les propriétés physicochimiques et photocatalytiques des revêtements.Afin de s’affranchir de la contamination du catalyseur par le sodium du verre lors de traitements en température ou lors de recuits de couches déposées à l’ambiante, une barrière de diffusion en SiNx est intercalée et son épaisseur est fixée pour la suite de l’étude. Différentes couches de TiO2 ont été élaborées à haute pression dans un réacteur doté d’un système de contrôle en boucle fermée basé sur la spectroscopie d’émission optique. L’effet de la cristallisation in situ à différentes températures sur les différentes propriétés des revêtements TiO2 a été étudié et les propriétés de ces derniers ont été comparées à celles des échantillons synthétisés sur des substrats froids et recuits ex situ aux mêmes températures.Enfin, des premiers travaux portant sur l’influence de l’introduction de l’argent en différentes teneurs sur l’efficacité photocatalytique sous lumière visible des couches de TiO2 cristallisées in situ et ex situ sont présentés. / The development of supported photocatalysts thin films is of major interest allowing an efficient separation of the reaction products, in spite of their specific area reduction compared to nanometric scale powders. The synthesis of TiO2 coatings by reactive magnetron sputtering is the subject of intensive researches. This technique allows, trough the control of the deposition parameters, to manage the structure and the physicochemical and photocatalytic properties of the coatings. In order to hinder the sodium contamination of the catalyst from the glass substrate, either during in situ or ex situ heating of the coating, a SiNx diffusion barrier is intercalated with a fixed thickness. Different layers of TiO2 were prepared at high pressure in a reactor equipped with a closed-loop control system based on optical emission spectroscopy. The influence of the in situ crystallization at different temperatures on the properties of the TiO2 coatings was studied. These properties were compared with those of samples synthesized ex situ and at the same temperatures. Finally, first studies on the influence of silver enrichment at different contents on photocatalytic activity under visible light of TiO2 layers crystallized in situ and ex situ, are presented.

<p>Mechanical property and thermal stability of Zr-Si-N films of varying silicon contents deposited on Al₂O₃ (0001) substrates are characterized. All films provided for characterization were deposited by reactive DC magnetron sputter deposition technique from elemental Zr and Si targets in a N₂/Ar plasma at 800 ^oC. The hardness and microstructures of the as deposited films and post-annealed films up to 1100 ^oC are evaluated by means of nanoindentation, X-ray diffractometry and transmission electron microscopy. The Zr-Si-N films with 9.4 at.% Si exhibit hardness as high as 34 GPa and a strong (002) texture within which vertically elongated ZrN crystallites are embedded in a Si₃N₄ matrix. The hardness of these two dimensional nanocomposite films remains stable up to 1000 ^oC annealing temperatures which is in contrast to ZrN films where hardness degradation occurs already above 800 ^oC. The enhanced thermal stability is attributed to the presence of Si₃N₄ grain boundaries which act as efficient barriers to hinder the oxygen diffusion. X-ray amorphous or nanocrystalline structures are observed in Zr-Si-N films with silicon contents > 13.4 at.%. After the annealing treatments, crystalline phases such as ZrSi₂, ZrO₂ and Zr₂O are formed above 1000 ^oC in the Si-containing films while only zirconia crystallites are observed at 800 ^oC in pure ZrN films because oxygen acts as artifacts in the vacuum furnace. The structural, compositional and hardness comparison of as-deposited and annealed films reveal that the addition of silicon enhances the thermal stability compared to pure ZrN films and the hardness degradation stems from the formation of oxides at elevated temperatures.</p>

Mechanical property and thermal stability of Zr-Si-N films of varying silicon contents deposited on Al2O3 (0001) substrates are characterized. All films provided for characterization were deposited by reactive DC magnetron sputter deposition technique from elemental Zr and Si targets in a N2/Ar plasma at 800 oC. The hardness and microstructures of the as deposited films and post-annealed films up to 1100 oC are evaluated by means of nanoindentation, X-ray diffractometry and transmission electron microscopy. The Zr-Si-N films with 9.4 at.% Si exhibit hardness as high as 34 GPa and a strong (002) texture within which vertically elongated ZrN crystallites are embedded in a Si3N4 matrix. The hardness of these two dimensional nanocomposite films remains stable up to 1000 oC annealing temperatures which is in contrast to ZrN films where hardness degradation occurs already above 800 oC. The enhanced thermal stability is attributed to the presence of Si3N4 grain boundaries which act as efficient barriers to hinder the oxygen diffusion. X-ray amorphous or nanocrystalline structures are observed in Zr-Si-N films with silicon contents &gt; 13.4 at.%. After the annealing treatments, crystalline phases such as ZrSi2, ZrO2 and Zr2O are formed above 1000 oC in the Si-containing films while only zirconia crystallites are observed at 800 oC in pure ZrN films because oxygen acts as artifacts in the vacuum furnace. The structural, compositional and hardness comparison of as-deposited and annealed films reveal that the addition of silicon enhances the thermal stability compared to pure ZrN films and the hardness degradation stems from the formation of oxides at elevated temperatures.

This thesis reports both the optimizations of the vanadium oxide (VOx) thin film as an active infrared detector material by the magnetron sputtering deposition method and its use during fabrication of proper resistors for the microbolometers. Vanadium oxide is a preferred material for microbolometers, as it provides high TCR value, low noise, and reasonable resistance, and a number of high-tech companies have used this material to obtain state-of-the-art microbolometer arrays. This material is first used in microbolometers by Honeywell, who provides its recipe with license agreements, and there is not much information in the literature for its deposition recipe. This is the first study at METU for development of vanadium oxide thin film for microbolometers. The VOx material deposition studies started by identifying the deposition parameters of the magnetron sputtering system in order to obtain proper VOx resistors for the readout electronics. The obtained recipe includes high temperature deposition conditions of VOx, however, this causes a diffusion problem on the electrodes, preventing to obtain a good contact to VOx. Also, high oxygen level in the depositions makes a contamination on the electrodes. A number of studies were done to determine a proper electrode material which is proper with the deposition conditions of the VOx. Characterization of the vanadium oxide samples is done by XRD and XPS measurements to see the relation between the phases and resistivity of the vanadium oxide. It is known that V2O5 phase provides a high TCR and resistivity value, and the XRD results show that this phase is dominant in the highly-oxygen doped or annealed resistors. The TCR and noise measurements are done using resistors implemented with the developed VOx film, after the etching processes of the both VOx and the electrodes are optimized. The contamination on the electrodes is prevented by the help of a newly designed process. The TCR measurement results show that annealing of the resistors affect the TCR values, i.e., increasing the annealing duration increases the TCR values of the resistors. Two different resistors with different deposition conditions are annealed to see the effect of annealing, where TCR results of the resistors are -0.74%/K and -0.8 %/K before annealing. The TCR values of these resistors increase to -1.6 %/K and -4.35 %K, respectively, after annealing in same conditions, showing that both the deposition conditions and annealing change the TCR significantly. Although good TCR values are obtained, the noise values of the VOx resistors are much higher than the expected values, which suggest a further study to determine the cause of this noise.

Objective of the present work is a broad investigation of the so called &amp;quot;target poisoning&amp;quot; during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identified. / Gegenstand der Arbeit ist die Untersuchung der Targetvergiftung beim reaktiven Magnetronsputtern von TiN in Argon-Sticksoff Atmosphäre. Die Untersuchungen beinhalten die Echtzeit in-situ Ionenstrahlanalyse des Stickstoffeinbaus in das Titantarget während des Depositionsprozesses sowie die Analyse der Teilchenflüsse vom – und hin zum Sputtertarget mittels energieaufgelöster Massenspektrometrie. Das Magnetron wurde in einer Vakuumkammer installiert, welche an die Beamline des 5 MV Tandembeschleunigers angeschlossen war. Die Position des Magnetrons konnte mittels eines Manipulator verändert werden, was die laterale Untersuchung der Targetoberfläche ermöglichte. Während des Magnetronbetriebes wurde der Argonfluss in die Kammer konstant gehalten, während der Stickstofffluss variiert wurde um verschiedene Ausprägungen der Targetvergiftung zu erreichen. In einem ersten Schritt wurden die Eigenschaften des Plasmas, z.B. die Zusammensetzung des Sputtergases, das Verhalten des Reaktivgaspartialdruckes, das Plasmapotenzial und der Dissoziationsgrad der Reaktivgasmoleküle im Plasma, mit dem Massenspektrometer ermittelt. Aufgrund der ungleichmäßigen Gasentladung vor dem Magnetrontarget, wurden auch lateral variierende Teilchenflüssen und eine ungleichmäßige Targetvergiftung angenommen. Die Energie und die Ausbeute von gesputterten Teilchen wurde deshalb lateral aufgelöst untersucht. Das Massenspektrometer wurde zu diesem Zweck am Ort des Substrates positioniert und die Targetoberfläche konnte gescannt werden indem die Magnetronposition verändert wurde. Die so aufgenommenen Energieverteilungen der gesputterten Teilchen zeigen eine räumliche Abhängigkeit. Teilchen die aus dem Targetzentrum stammen unterscheiden sich hinsichtlich ihrer Energie signifikant von den Teilchen die in der Target-Erosionszone gesputtert werden. Dieses Resultat zeigt die ungleichmäßige Targetvergiftung, wodurch es zu einer Veränderung der Oberflächenbindungsenergie kommt. Über die Verschiebung in der Energieverteilung lässt sich somit der Zustand der Targetoberfläche beschreiben. Diese experimentellen Ergebnisse zeigen Übereinstimmung mit den Ergebnissen der Modellrechnungen. Der Stickstoffgehalt des Targets wurde weiterhin mittels Ionenstrahlanalyse (NRA) bestimmt. Messungen bei verschiedenen Stickstoffflüssen demonstrieren direkt die Vergiftung des Targets. Die maximale Stickstoffkonzentration sättigt bei einem Wert, der dem Stickstoffgehalt in einer ca. 3 nm dicken Titannitridschicht entspricht. Bei ausreichend niedrigem Stickstofffluss zeigt die Messung quer über den Targetdurchmesser eine Variation im Stickstoffgehalt. Die Stickstoffkonzentration in der Erosionszone ist deutlich geringer als im Targetzentrum oder am Targetrand. Die Resultate wurden wiederum durch Modellrechnungen bestätigt. Die durchgeführten Computersimulationen basieren auf Sören Bergs Modell des reaktiven Sputterprozesses. Der Algorithmus wurde jedoch auf der Basis der experimentellen Ergebnisse erweitert. Das Modell beinhaltet nun Mechanismen des Reaktivgaseinbaus in das Target, wie Adsorption, Implantation und Recoilimplantation. Des Weiteren wurde die Ionenstromverteilung als Funktion des Targetdurchmessers in das Modell aufgenommen, was eine detailliertere Beschreibung des Prozesses ermöglicht. Die experimentellen Ergebnisse und die Resultate der Computersimulation zeigen, dass bei niedrigen Reaktivgasflüssen metallische und vergiftete Bereiche auf der Targetoberfläche gemeinsam existieren. Das ist im Widerspruch zu älteren Simulationen, in denen von einer homogenen Targetbedeckung durch das Reaktivgas ausgegangen wird. Basierend auf den Ergebnissen wurden die dominierenden Mechanismen des Reaktivgaseinbaus in das Sputtertarget, in Abhängigkeit von der Position und von der Sputtergaszusammensetzung, identifiziert.

The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering under simultaneous stress relaxation by ion implantation. An in situ instrument based on laser deflectometry on cantilever structures and in situ ellipsometry, was used for in situ stress measurements. The characteristic evolution of the instantaneous stress during the layered growth of cBN films observed in IBAD experiments, could be reproduced for magnetron sputter deposition. To achieve simultaneous stress relaxation by ion implantation, a complex bipolar pulsed substrate bias source was constructed. This power supply enables the growth of cBN thin films under low energy ion irradiation (up to 200 eV) and, for the first time, the simultaneous implantation of ions with an energy of up to 8 keV during high voltage pulses. It was demonstrated that the instantaneous stress in cBN thin films can be released down to -1.1 GPa by simultaneous ion bombardment during the high voltage pulses. A simultaneous stress relaxation during growth is possible in the total investigated ion energy range between 2.5 and 8 keV. These are the lowest ion energies reported for the stress relaxation in cBN. Since such a substrate bias power supply is easy to integrate in existing process lines, this result is important for industrial deposition of thin films, not only for cubic boron nitride films. It was found that the amount of stress relaxation depends on the number of atomic displacements (displacements per atom: dpa) that are induced by the high energy ion bombardment and is therefore dependent on the ion energy and the high energy ion flux. In practise, this means that the stress relaxation is controlled by the product of the pulse voltage and the pulse duty cycle or frequency. The cantilever bending measurements were complemented on microscopic scale by x-ray diffraction (XRD). The analysis of the cBN (111) lattice distances revealed a pronounced biaxial compressive state of stress in a non-relaxed cBN film with d(111) being larger in out-of-plane than in in-plane direction. Post deposition annealing at 900 ° C of a sample with an ion induced damage of 1.2 dpa, resulted in a complete relaxation of the lattice with equal in-plane and out-of-plane lattice parameters. In the case of medium-energy ion bombardment, the in-plane and out-of-plane lattice parameters approach the value of the annealed sample with increasing ion damage. This is a clear evidence for stress relaxation within the cBN lattice. The stability of cBN under ion bombardment was investigated by IR spectroscopy and XRD. The crystalline cBN was found to be very stable against ion irradiation. However a short-range ordered, sp3/sp2 - mixed phase may exist in the films, which could be preferably converted to a sp2 -phase at high damage values. From the analysis of the near surface region by XANES, it can be concluded the stress relaxation by the energetic ion bombardment is less at the surface than in the bulk film. This is explained with the dynamic profile of the ion induced damage, that reaches the stationary bulk value in 15-20 nm depth, whereas it is decreasing towards the surface. This fits with the results that the stress relaxation is dependent on the amount of ion induced damage. Comparing the results from substrate curvature measurement, XRD, XANES, and IR spectroscopy possible mechanisms of stress relaxation are discussed. Concluding the results, it can be stated that using simultaneous ion implantation for stress relaxation during the deposition it is possible to produce BN films with a high amount of the cubic phase and with very low residual stress.

No description available.

Research on the characterisation and understanding of pulsed magnetron discharges used for the deposition of thin, especially dielectric, films has been carried out between 2003 and 2008 at Chemnitz University of Technology. This thesis is a collection and summary of the original research during this period. In the main part of the thesis, work published in peer-reviewed scientific papers is summarised and yet unpublished results are given in more detail. Different aspects highlighted in the publications are described in a general context of the characterisation of the pulsed discharges for the principal understanding. The cross-linking of the published results is addressed and where necessary extensions to the publications are given. The main part is organised in three sections. In the first one, basics of pulsed magnetron discharges, their application, and important questions are summarised. The second section describes general results and physics of the discharges that have been obtained during the research work. It also emphasises the successful development or modifications of experimental techniques for the time-resolved characterisation. The third section addresses the possibilities to modify and control the process by external parameters that are typically accessible during the application or required by it. An appendix to the thesis comprises selected published research work which is made available as reprints of the original publications. Other publications which are not included as reprints are referenced to in the main part. / Untersuchungen zur Charakterisierung und zum Verständnis gepulster Magnetronentladungen, die zur Abscheidung von dünnen Schichten, besonders von dielektrischen Schichten, verwendet werden, wurden in den Jahren 2003 bis 2008 an der Technischen Universität Chemnitz durchgeführt. Diese Arbeit ist eine Sammlung und Zusammenfassung von neuen Forschungsergebnissen, die in diesem Zeitraum gewonnen wurden. Im Hauptteil der Habilitationsschrift werden die Arbeiten, die in referierten wissenschaftlichen Zeitschriften erschienen sind, zusammengefasst und noch unveröffentlichte Ergebnisse ausführlicher beschrieben. Verschiedene Aspekte, die in den Veröffentlichungen herausgestrichen wurden, werden in einem allgemeinen Zusammenhang der Charakterisierung gepulster Entladungen für ein prinzipielles Verständnis dargestellt. Querverbindungen zwischen den veröffentlichten Ergebnissen werden herausgearbeitet und wo nötig werden Erweiterungen der Originalveröffentlichungen vorgenommen. Der Hauptteil der Habilitationsschrift ist in drei Abschnitte unterteilt. Im ersten Teil werden Grundzüge gepulster Entladungen, ihre Anwendung und wesentliche Fragestellungen zusammengefasst. Der zweite Abschnitt beschreibt allgemeine Ergebnisse und die Physik der Entladungen, die während der Forschungsarbeit herausgearbeitet wurden. Er stellt auch die erfolgreiche Neuentwicklung oder Modifikation von Messtechniken zur zeitaufgelösten Charakterisierung heraus. Der dritte Abschnitt befasst sich mit den Möglichkeiten, den Beschichtungsprozess durch externe Parameter, die typischerweise während der Prozessanwendung zugänglich oder auch erforderlich sind, zu modifizieren und zu steuern. Der Anhang der Schrift beinhaltet ausgewählte Originalveröffentlichungen, die in Form von Reprints zugänglich gemacht werden. Andere Veröffentlichungen, die nicht im Anhang enthalten sind, werden im Hauptteil zitiert.

Research on the characterisation and understanding of pulsed magnetron discharges used for the deposition of thin, especially dielectric, films has been carried out between 2003 and 2008 at Chemnitz University of Technology. This thesis is a collection and summary of the original research during this period. In the main part of the thesis, work published in peer-reviewed scientific papers is summarised and yet unpublished results are given in more detail. Different aspects highlighted in the publications are described in a general context of the characterisation of the pulsed discharges for the principal understanding. The cross-linking of the published results is addressed and where necessary extensions to the publications are given. The main part is organised in three sections. In the first one, basics of pulsed magnetron discharges, their application, and important questions are summarised. The second section describes general results and physics of the discharges that have been obtained during the research work. It also emphasises the successful development or modifications of experimental techniques for the time-resolved characterisation. The third section addresses the possibilities to modify and control the process by external parameters that are typically accessible during the application or required by it. An appendix to the thesis comprises selected published research work which is made available as reprints of the original publications. Other publications which are not included as reprints are referenced to in the main part. / Untersuchungen zur Charakterisierung und zum Verständnis gepulster Magnetronentladungen, die zur Abscheidung von dünnen Schichten, besonders von dielektrischen Schichten, verwendet werden, wurden in den Jahren 2003 bis 2008 an der Technischen Universität Chemnitz durchgeführt. Diese Arbeit ist eine Sammlung und Zusammenfassung von neuen Forschungsergebnissen, die in diesem Zeitraum gewonnen wurden. Im Hauptteil der Habilitationsschrift werden die Arbeiten, die in referierten wissenschaftlichen Zeitschriften erschienen sind, zusammengefasst und noch unveröffentlichte Ergebnisse ausführlicher beschrieben. Verschiedene Aspekte, die in den Veröffentlichungen herausgestrichen wurden, werden in einem allgemeinen Zusammenhang der Charakterisierung gepulster Entladungen für ein prinzipielles Verständnis dargestellt. Querverbindungen zwischen den veröffentlichten Ergebnissen werden herausgearbeitet und wo nötig werden Erweiterungen der Originalveröffentlichungen vorgenommen. Der Hauptteil der Habilitationsschrift ist in drei Abschnitte unterteilt. Im ersten Teil werden Grundzüge gepulster Entladungen, ihre Anwendung und wesentliche Fragestellungen zusammengefasst. Der zweite Abschnitt beschreibt allgemeine Ergebnisse und die Physik der Entladungen, die während der Forschungsarbeit herausgearbeitet wurden. Er stellt auch die erfolgreiche Neuentwicklung oder Modifikation von Messtechniken zur zeitaufgelösten Charakterisierung heraus. Der dritte Abschnitt befasst sich mit den Möglichkeiten, den Beschichtungsprozess durch externe Parameter, die typischerweise während der Prozessanwendung zugänglich oder auch erforderlich sind, zu modifizieren und zu steuern. Der Anhang der Schrift beinhaltet ausgewählte Originalveröffentlichungen, die in Form von Reprints zugänglich gemacht werden. Andere Veröffentlichungen, die nicht im Anhang enthalten sind, werden im Hauptteil zitiert.