Les films de nitrures métalliques nanostructurés sont généralement utilisés comme revêtements protecteurs. Ti1-xAlxN (0 ≤ x ≤ 1) peut être considéré comme un système modèle, où TiN (cubique) et AIN (hexagonal) sont partiellement miscibles. L’élaboration par dépôt physique en phase vapeur donne au film une microstructure colonnaire complexe composée de phase métastable pouvant cohabiter avec des précipités localisés aux joints de grains. Une haute dureté et une grande résistance à l’oxydation sont observées pour un maximum d’atomes de Ti substitué par des atomes de Al en réseau cubique. Les conditions de dépôt et la composition jouent un rôle majeur sur la substitution des éléments métalliques (Ti ,Al). Nous avons préparé deux séries de films déposés par pulvérisation cathodique magnétron réactive à partir de cibles TiAl compartimentées et frittées. La micro- et nanostructure des films ont été analysées par Diffraction, Spectroscopie d’Absorption des rayons X et Microscopie Electronique à Transmission. L’usure des revêtements a été étudiée par microtribologie. Nous observons pour les films riches en Ti (x < 0,5) des directions de croissances [200]c et [111]c, caractéristiques d’un réseau cubique. Tandis que, les films riches en Al (x > 0,7) présentent une croissance de domaines bien cristallisés suivant la direction [002]h du réseau hexagonal. De plus, nous avons mis en évidence l’apparition de la transition cubique / hexagonal à des teneurs en Al plus élevée pour les films issus de cible frittée. Ces films montrent une meilleure résistance à la fissuration et à l’usure que ceux déposés à partir de cible compartimentées. / Ti1-xAlxN (0 ≤ x ≤ 1) is considered as a model system, where TiN (fcc) and AlN (hcp) do not mix over the whole composition range due to their low miscibility. However, the physical vapour deposition (PVD) allows achieving metastable phases of Ti1-xAlxN, where Al atoms are partially substituting for Ti in fcc lattice. Ti1-xAlxN coatings exhibit high hardness and oxidation resistance for the maximum Al substituted to Ti in fcc lattice (about x=0.6). The proportion of grain boundaries and the limit solubility play a major role on the mechanical properties and resistance to wear of the coatings. Several techniques are employed to investigate two sets of Ti1-xAlxN thin films deposited by magnetron reactive sputtering from two types of metallic targets onto Si (100). Lattice symmetry of crystallised domains and columnar growth structure of the films are characterized by X-ray diffraction (XRD) and electron microscopy (TEM, HRTEM). Several local probes such as X-ray absorption fine structure (XAFS), diffraction anomalous fine structure (DAFS) and Electron Energy Loss Spectroscopies (EELS) which are very sensitive to the symmetry of the atomic sites either octahedral for fcc lattice or tetrahedral for hcp one are carried out. For Ti-rich films (x < 0.5), the competitive growth of cubic domains between [200]c and [111]c is observed. For Al-rich films (x > 0.7) have a domain growth well crystallized in the direction [002]h the hexagonal lattice. In addition, the cubic / hexagonal transition in Al contents higher is observed for films from sintered target. These films show better wear resistance than those deposited from target compartmentalized.

Semi conductors are of technological importance and attracted many of the re-searchers. ZnO belongs to the family of II-VI semiconductors and has material properties well suitable to UV light emitters, varistors, Schottky diodes, gas sensors, spintronics, ferroelectric devices and thin film transistors. It has been considered as a competitor to GaN, which belongs to the family of III-V semiconductors. This is due to the fact that ZnO of high quality can be deposited at lower growth temperatures than GaN, leading to the possibility of transparent junctions on less expensive substrates such as glass. This will lead to low-cost UV lasers with important applications in high-density data storage systems etc. One of the most popular growth techniques of ZnO is physical sputtering. As compared to sol-gel and chemical-vapor deposition, the magnetron sputtering is a preferred method because of its simplicity and low operating temperatures. Hence, detailed investigations were carried out on undoped and doped ZnO thin films primarily deposited by magnetron sputtering. The obtained results in the present work are presented in the form of a thesis. Chapter 1: A brief discussion on the crystal structure of ZnO material and its possible applications in the different areas such as Schottky diodes, spintronics, ferroelectric devices and thin film transistors are presented. Chapter 2: This chapter deals with various deposition techniques used in the present study. It includes the magnetron sputtering, thermal oxidation, pulsed-laser ablation and sol-gel technique. The experimental set up details and the deposition procedures are described in detail i.e., the deposition principle and the parameters that will affect the film properties. A brief note on the structural characterization equipments namely, X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and the optical characterization equipments namely, transmission spectroscopy is presented. The transport properties of the films were studied which include Dielectric studies, impedance studies, device characterization and are discussed. Chapter 3: The optimization of ZnO thin films for Schottky diode formation and The characterization of various Schottky diodes is presented in this chapter. P-type conductivity in ZnO was implemented by the variation of partial pressure of oxygen during the sputtering and are discussed. A method to achieve low series resistance hetero-junction was achieved using thermal oxidation method and the detailed transport properties were studied. The optical investigation carried out on the ZnO thin films under various growth conditions are also presented. Chapter 4: This chapter deals with the processing, structural, electrical, optical and magnetic properties of Mn doped ZnO thin films grown by pulsed laser ablation. Structural investigations have shown that the Mn incorporation increases the c-axis length due to the relatively larger ionic size of the Mn ions. Studies conducted both at low and high concentration region of Zn1¡xMnxO thin films showed that the films are anti-ferromagnetic in nature. The transport measurements revealed that the electrical conductivity is dominated by the presence of shallow traps. Optical investigations suggested the absence of midgap absorption and confirm the uniform distribution of Mn in wurtzite structure. Chapter 5: Carrier induced ferromagnetism in Co doped ZnO thin films were studied and the results are presented in this chapter. High density targets were prepared by solid state reaction process and the thin films were deposited by pulsed laser ablation technique. Two compositions were studied and it was found that with increase in substrate temperature, c-axis length decreases. Optical studies suggested a strong mid gap absorption around 2eV and could be attributed to the d-d transitions of tetrahedral coordinated Co2+. The presence of ferromagnetism in these films makes them potential candidates for spintronics applications. Chapter 6: It has been reported in literature that o®-centered polarization will drive ferroelectric phase transition. Motivated by such results, substitution of Lithium in ZnO was studied in detail. The structural and electrical properties were investigated over a wide range of composition (0-25%). The ferroelectric studies were carried out both in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configuration and are presented in this chapter. The appearance of Ferro electricity in these films makes them potential candidates for ferroelectric memory devices. Chapter 7: This chapter describes the studies conducted on Mg doped ZnO Thin films grown by multi-magnetron sputtering. The hexagonal phases of the films were evaluated. All the films exhibited c-axis preferred orientation towards (002) orientation. Micro structural evolutions of the films were carried out through scanning electron microscopy and atomic force microscopy. Ferroelectric properties were investigated in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configurations. It was observed that the Mg concentration increases the band gap and the details on optical investigations are also presented in this chapter. Chapter 8: ZnO based thin film transistors have been fabricated and characterized using ZnO as active channel layer and Mg doped ZnO as dielectric layer. Excellent leakage properties of the gate dielectric were studied and presented in this chapter. These studies demonstrated that Mg doped ZnO thin films are suitable candidates for gate dielectric applications. Conclusions: This section presents the conclusions derived out of the present work. It also includes a few suggestions on future work on this material.

Το θέμα αυτής της διπλωματικής εργασίας είναι η παρασκευή με τη μέθοδο sputtering και ο χαρακτηρισμός μαγνητικών λεπτών υμενίων. Στo πρώτο κεφάλαιο, που αποτελεί και την εισαγωγή, γίνεται μια αναφορά στη τεχνολογία των λεπτών υμενίων και δίνεται το στοιχειώδες θεωρητικό υπόβαθρο των τεχνικών ανάπτυξης αυτών. Στο δεύτερο κεφάλαιο παρουσιάζεται η διάταξη sputtering που χρησιμοποιήθηκε για την ανάπτυξη των μαγνητικών υμενίων και δίνονται τα αποτελέσματα της βαθμονόμησης ενός μετρητικού πάχους υψηλής ακρίβειας. Το τρίτο κεφάλαιο αναφέρεται στην κατασκευή και πιστοποίηση μιας πλήρως αυτοματοποιημένης και χαμηλού κόστους διάταξης μέτρησης μαγνητικών βρόχων μέσω του φαινομένου Kerr, με μέγιστο πεδίο πόλωσης 2Τ. Το τέταρτο κεφάλαιο αναφέρεται στις πειραματικές λεπτομέρειες της παρασκευής των μαγνητικών λεπτών υμενίων Νικελίου και Κοβαλτίου και δίνονται τα αποτελέσματα του δομικού και μαγνητικού χαρακτηρισμού τους. Τέλος, στο πέμπτο κεφάλαιο, παρουσιάζονται τα συμπεράσματα και οι παρατηρήσεις που προέκυψαν κατά τη διάρκεια της ενασχόλησης με τη διπλωματική εργασία. Γίνονται, επιπλέον, και ορισμένες προτάσεις για τη μελλοντική εξέλιξη των συστημάτων sputtering και ΜΟΚΕ, ενώ τονίζεται και το τεχνολογικό ενδιαφέρον που παρουσιάζουν τα υμένια που παρασκευάσθηκαν. / The subject of this diploma thesis is the growth using the sputtering process and the characterization of thin magnetic films. The first chapter refers to thin films' technology and there is given the elementary theoretical background of the thin films’ growth. In the second chapter, there is presented the sputtering device, which is used for the growth of the magnetic films. Also, there is given the results of the calibration of a newly established thickness monitor, which is used for high accuracy thickness measurements. In the third chapter, there is given the description of the construction of a fully automatic and low cost magneto - optic Kerr effect magnetometer for the magnetic loops' measurement in a maximum magnetic field of 2T. There are, also, given the magnetic loops which are used for the construction’s certification. The fourth chapter refers to the experimental details about the preparation of the Nickel and Cobalt magnetic thin films. There are, also, given the results about the structural and magnetic characterization of the thin films. Finally, in the fifth chapter, there are presented the conclusions and the observations, which arose during the diploma thesis. There are, also, presented some proposals about the future progress of the sputtering and MOKE systems, whereas at the same, there is stressed the technical interest of the thin films, which are prepared.

Dünne Schichten aus hydrogenisiertem amorphem Silizium a-Si:H spielen für die Photovoltaik eine wichtige Rolle. Einerseits kommt für die Dünnschicht-Photovoltaik unterschiedlich dotiertes a-Si:H in den Schichten einer p-i-n-Solarzelle zur Anwendung, andererseits stellen Heterokontakt-Solarzellen aus amorphem und kristallinem Silizium (a-Si:H/c-Si) wegen ihres hohen Wirkungsgrades derzeit ein sehr aktuelles Forschungsthema dar. Die Abscheidung der a-Si:H-Schichten im Rahmen dieser Arbeit erfolgt mit der Methode des Magnetronsputterns (Kathodenzerstäubung). Dieses für die in-line-Beschichtung etablierte Verfahren wird speziell für die Photovoltaik noch nicht in industriellem Maßstab eingesetzt (lediglich für transparente leitfähige Oxide TCO). Insbesondere existiert nur eine geringe Zahl von Veröffentlichungen zu Heterokontakten, welche mittels Magnetronsputtern hergestellt wurden. Ein Schwerpunkt der vorliegenden Arbeit ist daher die Herstellung sowie Charakterisierung solcher Heterokontakte unter dem Aspekt variierter Abscheide- und Prozessparameter (Substrattemperatur, Wasserstoffflussrate, Ionenbeschuss). Das für das Sputtern erforderliche Plasma wird mit einer im Mittelfrequenzbereich gepulsten Gleichspannung angeregt. Ein dadurch mehr oder weniger ausgeprägter Ionenbeschuss der wachsenden Schichten in Abhängigkeit der Pulsparameter wird hier analysiert. Die Charakterisierung der Heterokontakte erfolgt hauptsächlich anhand deren Strom-Spannung-Kennlinien, welche auch bei variierter Temperatur gemessen werden. Erzielte Gleichrichtungsverhältnisse um 10000:1 sowie Diodenidealitätsfaktoren η ≈ 1,3 kennzeichnen (p)a-Si:H/(n)c-Si-Heterokontakte mit den besten halbleiterphysikalischen Eigenschaften. Bei zu schwacher Schichthydrogenisierung wurde ein Ladungstransportmechanismus nachgewiesen, welcher in der Literatur als multi-tunneling capture-emission MTCE bekannt ist. Eine erhöhte Hydrogenisierung unterdrückt diesen Mechanismus nahezu vollständig. Durch Abscheidung unterschiedlich stark bordotierter a-Si:H-Schichten wird außerdem die Dotiereffizienz beurteilt. Hohe Werte sind bei amorphen Halbleitern im Allgemeinen schwer zu erreichen. Die mit stärkerer Dotierung erhöhte Gleichrichterwirkung lieferte hier ein Indiz für eine nachweisbare Dotiereffizienz.

Im Rahmen dieser Arbeit werden Schichten und Schichtsyteme untersucht, die mittels D.C. gepulstem Magnetronzerstäuben abgeschieden wurden. Die Untersuchungen der Schichten erfolgen unter dem Gesichtspunkt der Eignung dieser Schichten als Kontaktschichten für photovoltaische Anwendungen. Eine detaillierte Studie der Schichteigenschaften wurde mit Hilfe von optischen Spektroskopiemethoden sowie elektrischen Messungen erstellt. Diese stellt die Zusammenhänge der Abscheideparameter, insbesondere der Substrattemperatur und der Wasserstoffflussrate bei der Abscheidung mit den Schichteigenschaften her. Des Weiteren werden die wechselseitigen Abhängigkeiten der Schichteigenschaften dargelegt. Hierbei wurde unter anderem gezeigt, dass der allgemein in der Literatur akzeptierte lineare Zusammenhang zwischen der Tauc-Lorentz Bandlücke und dem Wasserstoffgehalt nicht für alle Proben bestätigt werden konnte. Stattdessen wurde die Abhängigkeit der Bandlücke im Wesentlichen dem Anteil der polyhydrierten Siliziumatome innerhalb der Schicht zugeordnet. Für Teilmengen der Proben ergibt sich hieraus wieder eine nahezu lineare Abhängigkeit zwischen dem Wasserstoffgehalt und der Bandlücke. Im zweiten Teil der Arbeit werden Heterostruktur-Dioden untersucht, die sich an der Grenzfläche zwischen amorphem und kristallinem Silizium ausbilden. Dabei werden vordergründig die elektrischen Eigenschaften untersucht. Dies umfasst die Untersuchung der Abscheideparameter auf grenzflächennahe Defektzustände, die mittels Ladungstransientenspektroskopie (QTS) gefunden wurden. Zudem wird der begünstigende Einfluss des kristallinen Siliziumsubstrats auf die Ausbildung von mikrokristallinen Strukturen der aufwachsenden Schichten mittels ramanspektroskopischen Untersuchungen dargelegt.

Shape memory alloys (SMAs) have been recognized as one of the most promising materials for MEMS micro-actuator applications. Among the available materials, Nickel/Titanium (NiTi) SMAs are more popular because, they exhibit unique properties in shape memory effect (SME) and pseudo-elasticity (PE). In addition NiTi SMA possesses high corrosion resistance, excellent mechanical properties and is also bio¬compatible. NiTi thin-film SMAs have been considered as the most significant material in the field of MEMS applications, which can be patterned with standard lithographic techniques to scale-up for batch production. However, the lack of proper understanding of basic materials’ properties and inability to reproduce, has limited the usage of this material in MEMS devices. The properties of NiTi SMA thin-films are very much sensitive to the elemental composition and structure, which are in turn decided by the deposition process and process parameters. A brief history of NiTi shape memory alloys (SMAs), basic information, transformation characteristics, crystal structure, phase diagram and literature reviewed for the current motivation have been presented in the second chapter In the third chapter, a brief summary about the deposition techniques relevant to NiTi film deposition has been presented. The deposition of NiTi films by a number of deposition techniques such as thermal evaporation, co-evaporation, molecular beam Epitaxy, pulsed laser deposition, flash evaporation, electron beam deposition, filtered arc deposition, ion beam assisted sputter deposition, vacuum plasma spraying, ion beam sputtering, ECR sputtering and magnetron sputtering techniques have been discussed. In order to achieve a precise control over film thickness and composition of the films on to the substrates, the selection of magnetron sputtering has been highlighted. In the present thesis, two prolonged approaches such as DC magnetron sputtering of an alloy target and co-sputtering of elemental targets have been presented. Various characterization techniques used for film thickness, composition, structure, micro¬structure, electrical, phase transformation and mechanical properties have also been briefly presented in the same chapter. In the fourth chapter, description of Conventional Alloy Target Sputtering System has been presented. DC magnetron sputtering of an alloy target with two different atomic ratios (Ni:Ti = 45:55 & 50:50) has been used for depositing the coatings. Several limitations in the reproducibility and repeatability have been observed with single alloy target sputtering, irrespective of the target composition ratio. In addition to this, incorporation of oxygen in the films during and after deposition has been observed, which has limited the extensive usage of this single alloy target system. The limitations regarding control over composition, thickness uniformity over large area have been improved by designing and fabricating a dedicated Three Target Magnetron Co-sputtering System. The vacuum diagnosis of the system under different conditions has been carried out by using PPR-200 Residual Gas Analyzer (RGA), which have included in Appendix I. Similar to alloy target sputtering system, the thickness uniformity and required composition with deposition parameters over a size of 75 mm diameter has been achieved and the process repeatability has been established. Oxygen incorporation in the films during deposition has been minimized by pre-sputtering of Ti target for known duration of time, which has resulted in significant reduction in partial pressure of oxygen in the chamber. The oxide layer formation on film surface has been eliminated by in-situ capping layer (TiN) deposition. In the fifth chapter, the influence of process parameters such as sample locations, substrate to target distance (STD), working pressure (WP), gas flow rates, deposition rates, deposition and annealing temperature, Target power, on the film thickness and composition uniformity have been presented for alloy target sputtering system as well as for the co-sputtering system. The film thicknesses have been measured with stylus method. Film compositions have been determined by energy dispersive X-ray spectroscopy (EDS), Secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS). The working pressure of 1.5 X 10-3 mbar, STD of 90 mm and target power of 100 W have been found to produce coatings having uniform thickness and composition over the given area for alloy target sputtering system. Similar investigations have been carried out for co-sputtered NiTiCu films. The working pressure of 1.5x 10-3 mbar, at a STD of 90 mm, at a rotational speed of 15 rpm and at target powers of 600, 50 and 12 W for Ti, Ni and Cu respectively, have resulted in the thickness and required composition uniformity over a size of 75 mm diameter substrate and the process repeatability has been established. In the Sixth chapter, the influence of process parameters on film structure and micro-structure on the NiTi/NiTiCu films deposited by a single alloy target and co¬sputtering have been studied by different analytical techniques like XRD, TEM, AFM, SEM etc. Phase transformation temperatures and kind of transformations have been investigated by DSC, Resistivity / Temperature and Stress/ Temperature studies and correlations have been established. The process parameters have been optimized for TiN deposition, which act as the capping layer to protect NiTi films from surface oxidation. The variation in mechanical behavior for the NiTi/ NiTiCu films before and after TiN capping by nano-indentation test have also presented. XRD and TEM studies have shown that the NiTi / NiTiCu films deposited at room temperature to 400o C are amorphous. Post-annealing, at a temperature of 450O C or above resulted in the film crystallization with oxide layer formation at the film surface, which has been confirmed by XRD and XTEM studies. In the case of Ni-rich NiTi films, R-phase diffraction peaks have also been identified in addition to the Austenite / Martensite phase. XRD investigations have shown that Ti-rich NiTi and Ni-rich NiTi films have resulted in precipitate free films. In the case of Ti-rich NiTiCu and Ni-rich NiTiCu films, the variations in Ti/Ni target power has resulted in the formation of NiTi 2 and Ni3Ti precipitates along with their parent Martensite and Austenite phases. When the Cu content is increased in NiTiCu films, an increase in number of Martensite phase diffraction peaks in XRD spectrum has been observed. XTEM studies have confirmed formation of oxide layer, inter-metallic layer and interface layer at higher post annealing temperatures. SEM studies have shown that the films deposited at higher gas flow rate results in the columnar micro-structure. In the context of NiTiCu films, the films deposited at higher Ti target power have shown more compact and tightly packed film micro-structure. AFM studies have shown increase in the average crystallite size and film roughness with post annealing temperature and duration. TiN coating has been used as the capping layer onto NiTi / NiTiCu films. Structural and micro-structural comparison of these films before and after TiN coating has resulted the appearance of (111) TiN peak in all TiN capped films. SEM and AFM studies have shown that the film roughness have decreased after capping layer deposition. DSC thermal cycling used to verify the film crystallization temperature has shown the appearance of exothermic peak in NiTi / NiTiCu films. DSC, Resistivity-temperature, stress-temperature response has been confirmed the transformation temperature and kind of transformations in all the films. Residual stress measurements have shown that the crystalline films exhibited lower bi-axial stress in comparison to the amorphous films. Ti-rich NiTi films have shown single phase transformations (M-A and A-M) whereas two phase transformations (M-R-A and A-R-M) have been observed in Ni-rich NiTi films. Higher deposition / annealing temperature have shown the appearance of distinct phase transformation peaks in resistivity vs. temperature studies. In the case of NiTiCu films, the decrease in film crystallization temperature with increase in the Cu content has been observed. The phase transformation temperature evaluated from second thermal cycle has shown decrease in the width of hysteresis loop with increase in the Cu content in NTC films. Nano-indentation studies have been carried out to evaluate the micro-hardness and modulus values of TiN capped and uncapped NiTi / NiTiCu films. The modulus and hardness uniformity have been confirmed for the different location over a diameter of 75 mm. The modulus and hardness values have increased with increase in the substrate and annealing temperature. Increase in the Cu target power has resulted in the increase in the hardness and modulus values under same deposition conditions. TiN coated NiTi / NiTiCu films have shown larger modulus and hardness values than the uncapped films. In the Seventh chapter, the fabrication process and actuation response for silicon dioxide, Aluminum and NiTi SMA coated micro-cantilevers has been discussed. Various nano-structures such as pyramids, beams and pillars by focused ion beam (FIB) micro-machining have been fabricated. High aspect ratio nano-pillars have been selected for micro-compression testing. In summary, this thesis emphasizes on the fabrication of specific sputtering systems relevant to NiTi film deposition and process parameter optimization for desired film thickness and composition uniformity. DC magnetron sputtering of a NiTi alloy target (50:50 and 45:55 at. %) and co-sputtering of elemental targets (Ni, Ti and Cu) have been presented. These films have been investigated for structural, micro-structural, phase transformation and mechanical properties. In-situ deposition of TiN capping layer, on to NiTi / NiTiCu films has been carried out to reduce the oxygen trapping. The fabrication process and actuation response of micro-cantilevers have been described. The etching characteristics to generate various nano-structures viz. pyramids, beams and pillars by focused ion beam (FIB) micro-machining have been investigated and mechanical testing of selected nano-structures have also been reported.

Ce travail porte sur la compréhension des mécanismes de nucléation-croissance et le développement de contraintes associé lors du dépôt par pulvérisation de films minces métalliques. Le développement d’un dispositif de mesure in-situ en cours de croissance de la résistivité électrique est présenté et les potentialités offertes par son couplage avec deux autres diagnostics in-situ : la mesure de courbure du substrat et la spectroscopie différentielle de surface, ainsi qu’avec des caractérisations structurales, morphologiques et chimiques ex-situ (DRX, XRR, METHR, EELS, AFM) ont permis de mettre en évidence : le rôle clé joué par la température homologue et la structure d’équilibre du matériau déposé pour guider le mode de croissance 2D ou 3D et les contraintes associées. Pour les métaux à croissance 3D étudiés (Ag, Au, Pd et Ir) tous de structure CC, nous avons montré que l’amplitude du pic de tension associée au stade de coalescence était liée à la mobilité atomique des adatomes ; son maximum correspondant à la continuité du film. Nous avons montré que l’épaisseur de coalescence et donc la microstructure et la contrainte des éléments de forte mobilité pouvaient être contrôlées par la présence d’un surfactant en cours de croissance. Il est exposé que pour les métaux de faible mobilité atomique (Mo, W, Ta, Fe) et/ou de structure CC, la croissance débute par la stabilisation d’une amorphe suivie par la cristallisation vers la phase d’équilibre CC (Mo, Fe) ou la structure quadratique dans le cas du Ta, induite par la minimisation des énergies de surface/interface. Les premiers stades de croissance complexes du système Pd/Si liés à une forte réactivité d’interface ont été expliqués par la formation d’un siliciure d’interface tout d’abord amorphe qui cristallise, lorsque l’épaisseur de Pd déposée devient suffisante, par ségrégation dynamique du Si dans le métal. La très forte dissymétrie des interfaces Pd/Si et Si/Pd ainsi que le rôle de la température et du réservoir de Si sur la formation du siliciure ont été étudiés. Les interdépendances entre contrainte de croissance en régime stationnaire, microstructure, énergie déposée et cinétique de croissance dans le cas de métaux de faible mobilité ont été élucidées et le rôle majeur des joints de grains et des puits de surface sur la relaxation des défauts de types interstitiels en excès induits lors de dépôts énergétiques démontré. Une extension aux dépôts énergétiques du modèle cinétique de Chason de développement des contraintes est proposée. / Size reduction for the race towards nanoscale devices impacts physical properties of materials due to morphology, microstructure, defects and presence of surfaces and interfaces, but also makes challenging their structural characterizations. Moreover, thin film growth by physical vapor deposition is a non-equilibrium process involving dynamics effects, which inherently affects nanostructure formation. Thanks to the development and use of in situ and real-time diagnostics, easily implementable in a vacuum chamber, as those based on the wafer curvature measurement, electrical resistivity or also the surface reflectance spectroscopy, described in this work, we are able to address these issues. An original 4 points probe resistivity setup, in situ and real-time, in a magnetron chamber, has been developed for this study, allowing samples introduction by a load-lock system and the growth of homogeneous, dense metallic films. Potentialities of these techniques are highlighted by studying magnetron sputtered metallic systems with various atomic mobility and interfacial reactivity. The sensibility of these techniques, at the sub monolayer scale, allows a better understanding of the firsts growth stages, nucleation processes, phase transformations and defects incorporation. Influence of microstructure (grain size), kinetics (growth rate) and deposited energy has been systematically studied. The main results obtained revealed: a correlation between the magnitude of tensile stress associated with the coalescence stage and the atomic mobility of adatoms during Volmer-Weber growth of Ag, Au, Pd and Ir thin films on a-SiOx; a two dimensional growth mode for films of lower mobility (Fe, Mo, Ta) on a-Si, with the stabilization of an amorphous layer before the crystallization of the equilibrium bcc structure (Fe and Mo) or the metastable tetragonal structure in the case of Ta, driven by the minimization of surface/interface energies; the strong reactivity of Pd films sputtered on Si or Ge (amorphous or crystalline) substrates, leading to the room-temperature formation of a crystalline silicide (germanide) Pd2Si (or Pd2Ge) phase whose crystallographic orientation depends on the nature of the sublayer and where the silicon is the fast diffuser; the complementary roles of surface and grain boundaries on the steady-state compressive stress regime observed under energetic conditions of growth (10-100eV). To account for these observations, an extension of Chason’s theoretical model is presented.

Le marché du stockage de l'énergie est en perpétuelle expansion, tant pour les applications nomades que fixes. Afin de répondre aux exigences requises pour les diverses applications (appareils électroniques, véhicules hybrides et électriques, stockage des énergies renouvelables…), des batteries toujours plus performantes, compactes et légères doivent être développées. Pour cela, les batteries utilisant du lithium métallique en tant qu'anode sont les plus attractives en termes de densités d'énergies. Néanmoins, l'utilisation d'électrolytes liquides conventionnels, généralement des solvants organiques inflammables, dans de tels dispositifs soulève des problématiques de sécurité. Les travaux de recherche présentés dans ce manuscrit concernent l'étude de matériaux vitreux pouvant être utilisés en tant qu'électrolyte solide afin de permettre le développement de batteries tout-solide sûres et performantes. Des verres de sulfures au lithium, attractifs pour leurs propriétés de conduction ionique, sont étudiés et caractérisés. Les propriétés de conduction ionique dans les verres étant toujours mal comprises et sujettes à controverses, l'analyse structurale des verres présente ici un réel intérêt pour une meilleure compréhension des corrélations entre structure et propriétés. Un effort de recherche a donc été porté sur l'étude de l'ordre local dans les verres préparés via différentes techniques d'analyse structurale complémentaires. Enfin, les matériaux vitreux, sont de manière générale relativement faciles à mettre en forme. Les verres étudiés dans ce manuscrit peuvent alors également être utilisés en tant qu'électrolytes sous forme de couches minces dans les micro-batteries. Des premiers essais de dépôts par pulvérisation cathodique RF magnétron de couches minces conductrices ont donc été effectués et constituent la première brique à la fabrication de micro-batteries. / The energy storage market is in constant growth for both portable and stationary applications. To satisfy the requirements of various applications (electronic devices, hybrid-electric vehicles, renewable energy storage…), always more efficient, more compact and lightweight batteries have to be developed. Then, thanks to their high energy densities, batteries using Li metal anodes are the most promising to complete this challenge. However, the use of conventional liquid electrolytes raises safety issues, mainly related to the flammability of the organic liquid. In this thesis, glassy materials, exhibiting great interest towards developing solid electrolytes are considered and might enable the development of safe and efficient all-solid-state batteries. Here, Li-sulfide glasses, attractive for their ionic conduction properties, have been studied and characterized. The ionic conduction properties of glasses are still misunderstood and controversial, the structural investigation of glasses is of great interest in order to get a better understanding of structure-properties relationship. Then, the short and intermediate range order of prepared glasses have been investigated by the mean of various complementary structural analysis techniques. Finally, glassy materials are usually quite easy to shape. Thus, studied glasses in this thesis can also be used as thin-film electrolytes in microbatteries. First tests of sputtering of conducting thin-films have been performed by RF magnetron sputtering and constitute a first step in order to design microbatteries.

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