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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
231

La génération de courant quantifié par des dispositifs en silicium pour la métrologie quantique / Quantified current generation by silicon devices for quantum metrology

Clapera, Paul 18 September 2015 (has links)
Les pompes à électrons ont été très étudiées et fabriquées par le monde scientifique. Elles génèrent un courant continu proportionnel à une fréquence très bien contrôlée en métrologie. Dans ce contexte métrologique, des principes et matériaux divers comme la pompe en GaAs ou Silicium ou encore le tourniquet supraconducteur ont marqué les avancées. Bien que les courants générés sont toujours plus grands et précis, les exigences fixées pour la métrologie sont difficiles à atteindre et pour l'heure aucune pompe à électrons ne peut être utilisable pour la mise en pratique du futur ampère quantique qui sera probablement défini dans quelques années.Par ailleurs, des chercheurs ont créé des circuits associant des transistors FETs (transistors à effet de champ) et des transistors SETs (transistors mono-électroniques), notamment dans une optique d'une électronique très basse consommation.Cette thèse apporte une contribution nouvelle dans ces deux domaines : une nouvelle pompe à électrons en silicium a été développée, et une co-intégration de circuit CMOS classique avec un dispositif de nanoélectronique quantique a été démontré.Notre pompe à électrons repose sur le principe de deux barrières tunnel réglables et d'un îlot central. Au travers de la modulation des barrières à la fréquence f, la charge électrostatique de l'îlot central est contrôlée, un courant continu I=ef est généré; et ceci même avec une tension nulle aux bornes de la pompe. Nos pompes à électrons utilisent la technologie nanofils silicium-sur-isolant développée par le CEA-LETI. Le nanofil est recouvert de deux grilles (2 MOSFETs en série) pour les barrières réglables, et un îlot de Coulomb métallique de petite taille est « isolé » entre ces deux transistors. Nos échantillons à 100mK nous ont permis de montrer que nous étions capables de contrôler adiabatiquement l'état de charge de l'îlot quantique et de générer des courants quantifiés jusqu'à 900MHz. Nous avons aussi fabriqué les premières pompes à électrons en lithographique optique uniquement, avec pour ces dernières une fréquence maximale de pompage de 300MHz.Notre technologie de fabrication de SETs à grande échelle repose sur une réduction des tailles. Ces techniques n'ont que très rarement été couplées avec des circuits CMOS conventionnels mais fonctionnant à basse température. L'intérêt d'une telle co-intégration est grand dans le domaine de l'information quantique: la mise en place de beaucoup de qubits couplés pourrait nécessiter des circuits « annexes » réalisés en CMOS classique mais cryogénique.Nous avons conçu et fabriqué avec le LETI-DACLE un circuit co-intégrant un circuit oscillant composé de FETs de grandes dimensions et un circuit nanoscopique composé de SETs. Un circuit d'essai comprenant une pompe à électrons pilotée sur la puce par un circuit oscillant a été réalisé et mesuré à basse température.Nos résultats montrent que les circuits oscillants basés sur des oscillateurs en anneaux pour des applications à 300K restent fonctionnels jusqu'à 1K, malgré une très faible baisse de la fréquence d'oscillation. En parallèle, nous avons par la mesure de courant de rectification sur le dispositif nanoscopique mis en évidence que la cohabitation entre circuit FET et SET était réalisable et qu'il est possible d'imaginer un circuit complexe pour réaliser une pompe à électrons et son électronique associée sur une même puce.La conception de pompe à électrons par l'approche de la technologie SOI a montré sa viabilité, avec nos dispositifs potentiellement équivalents aux meilleures pompes crées jusqu'à présent. L'avantage du silicium et des techniques de fabrication modernes ont prouvé qu'il était possible de créer des circuits complexes alliant FET et SET pour des applications faisant intervenir des phénomènes quantiques. Ces travaux montrent le caractère prometteur de la co-intégration de circuits et ouvre la voie à de plus amples investigations dans la réalisation des pompes à électrons en silicium. / Electrons pumps have been extensively studied and manufactured by the scientific world. They generate a DC current proportional to a frequency very well controlled metrology. In this metrological context, the various principles and materials such as GaAs or Silicon pump or the superconducting turnstile have shown great progress. Although the generated level of currents are always higher and accurate, the requirements for the metrology are difficult to meet and for now no electron pump can be used for the realisation of the future quantum ampere that will probably be defined in a few years.Moreover, researchers have created circuits involving transistors FETs (field effect transistors) and transistors SETs (single-electron transistors), particularly to the purpose of a low consumption electronic.This thesis makes a further contribution in both areas: a new silicon electron pump was developed and co-integration of conventional CMOS circuit with a quantum nanoelectronics device was demonstrated.Our electron pump is based on the principle of two tuneable tunnel barriers and a central island. Through the modulation of the barriers at the frequency f, the electrostatic charge of the central island is controlled, a direct current I = ef is generated; and this even with a zero voltage bias across the pump. Our electron pumps use the nanowire technology silicon-on-insulator developed by CEA-LETI. The nanowire is covered with two gates (two MOSFETs in series) as adjustable barriers, and a small metallic Coulomb island is "isolated" between these two transistors. Our samples at 100mK demonstrated that we were able to control the quantum island charge state adiabatically and generated quantified currents up to 900MHz. We also produced the first electron pumps only achieved by optical lithography, with a maximum pumping frequency of 300MHz.Our large scale SETs manufacturing technology is based on the extreme size shrinking. These techniques have rarely been coupled with conventional CMOS circuits, when operating at low temperature. The interest of such co-integration is strong in the field of the quantum information: the establishment of many coupled qubits may require "additionnal" circuits made with classic CMOS but in cryogenic environnement.We designed and fabricated with the LETI-DACLE a co-integration of an oscillating circuit composed of large FETs circuit and a circuit made of nanoscopic SETs. A test circuit comprising an electron pump driven on chip by an oscillating circuit was created and measured at low temperature.Our results show that the oscillating circuit based on ring oscillators for 300K applications remain functional up to 1K, despite a very slight decay in the oscillation frequency. In parallel, by measuring a rectification current on the nanoscale device we demonstrated that cohabitation between FET circuit and SET was realistic and makes possible to imagine a complex circuit to achieve an electron pump and its electronic embedded on a single chip.The electron pump design by the approach of SOI technology has demonstrated its viability, potentially our devices are equivalent versus the best pumps created so far. The advantage of silicon and modern manufacturing techniques have proved that was possible to create complex circuits combining FET and SET for applications involving quantum phenomena. This work shows the promising nature of the co-integration circuits and opens the way for further investigation in the implementation of silicon electron pumps.
232

Standardization of CMM Algorithms and Development of Inspection Maps for Geometric Tolerances

January 2011 (has links)
abstract: The essence of this research is the reconciliation and standardization of feature fitting algorithms used in Coordinate Measuring Machine (CMM) software and the development of Inspection Maps (i-Maps) for representing geometric tolerances in the inspection stage based on these standardized algorithms. The i-Map is a hypothetical point-space that represents the substitute feature evaluated for an actual part in the inspection stage. The first step in this research is to investigate the algorithms used for evaluating substitute features in current CMM software. For this, a survey of feature fitting algorithms available in the literature was performed and then a case study was done to reverse engineer the feature fitting algorithms used in commercial CMM software. The experiments proved that algorithms based on least squares technique are mostly used for GD&T; inspection and this wrong choice of fitting algorithm results in errors and deficiency in the inspection process. Based on the results, a standardization of fitting algorithms is proposed in light of the definition provided in the ASME Y14.5 standard and an interpretation of manual inspection practices. Standardized algorithms for evaluating substitute features from CMM data, consistent with the ASME Y14.5 standard and manual inspection practices for each tolerance type applicable to planar features are developed. Second, these standardized algorithms developed for substitute feature fitting are then used to develop i-Maps for size, orientation and flatness tolerances that apply to their respective feature types. Third, a methodology for Statistical Process Control (SPC) using the I-Maps is proposed by direct fitting of i-Maps into the parent T-Maps. Different methods of computing i-Maps, namely, finding mean, computing the convex hull and principal component analysis are explored. The control limits for the process are derived from inspection samples and a framework for statistical control of the process is developed. This also includes computation of basic SPC and process capability metrics. / Dissertation/Thesis / M.S. Mechanical Engineering 2011
233

Vers l'industrialisation de l'auto-assemblage dirigé des copolymères à blocs : développement de procédés de lithographie compatibles avec les noeuds technologiques sub-10 nm pour des applications de type contacts / Towards the industrialization of directed self-assembly of block copolymers : development of lithographic processes compatible with sub-10 nm technology nodes for contact applications

Bouanani, Shayma 06 October 2017 (has links)
La course à la compétitivité que se disputent les industriels du semi-conducteur implique d’augmenter le nombre de fonctionnalités par puce ainsi que de réduire leur coût unitaire, ce qui se traduit par une diminution continue de leur taille. Pour ce faire, le DSA (Directed Self-Assembly), ou auto-assemblage dirigé des copolymères à blocs associe les techniques de lithographie conventionnelle avec les propriétés d’organisation à l’échelle moléculaire des copolymères. Dans ce cadre, l’objectif global de cette thèse est d’évaluer le potentiel d’industrialisation du DSA par grapho-épitaxie pour des applications de type « shrink » et « multiplication » de contacts. Il s’agit en particulier de démontrer la capacité de cette technique à répondre au cahier des charges de l’ITRS en termes d’uniformité de CD, de désalignement et de taux de défauts. Une première étude concernant le « shrink de contact », basée sur l’impact des propriétés matériaux, d’affinité de surface et de tailles de guides permet de comprendre les mécanismes qui rentrent en jeu dans l’apparition de défauts d’assemblage. Une seconde partie de l’étude porte sur la multiplication de contact. Pour adresser cette application, deux types de guides ont été étudié : les guides elliptiques et les guides complexes dits « peanut ». L’étude de la fenêtre de procédé en termes de paramètres procédé comme le temps et la température de recuit, mais aussi de commensurabilité, a été menée. Une attention particulière a été portée sur l’impact de la variation du guide sur le pitch final obtenu en DSA, dont les données expérimentales ont été corrélées avec des résultats de simulation. Les critères de réussite sont basés sur les performances lithographiques qu’il faut juger à travers une métrologie de pointe. Le développement d’une métrologie spécifique pour mesurer l’erreur de placement des contacts ainsi que leur pitch a été conduite. / The competitiveness-chasing in which industrial manufactures are involved, leads to an exponential increase in the number of functionalities per chips, as well as reducing their unit cost, which results in a continuous decrease of their size. To achieve this, DSA (Directed Self-Assembly) of block copolymers, combines conventional lithography techniques with the molecular-scale organizational properties of copolymers. In this framework, the overall objective of this thesis is to evaluate the industrialization potential of the DSA process by graphoepitaxy for contact hole shrink and contact multiplication applications. In particular, it is necessary to demonstrate the ability of this technique to meet the ITRS specifications in terms of CD uniformity, misalignment and hole open yield. A first study on contact shrink, based on the impact of material properties, surface affinity and guiding feature size, allows us to understand the mechanisms involved in the appearance of defects. A second part of the study deals with contact multiplication. To address this application, two types of guides have been studied: elliptical guiding patterns and more complex ones called "peanut". The study of the process window in terms of process parameters such as annealing time and temperature, but also commensurability was conducted. Particular attention was paid to guide size variation and its impact on DSA final pitch. Experimental data from this study were correlated with simulations. The success criteria are based on the lithographic performances that must be judged through advanced metrology. The development of a specific metrology to measure the placement error of contacts as well as their pitch was conducted.
234

Nouvelles perspectives de métrologie dimensionnelle par imagerie de microscope électronique pour le contrôle de la variabilité des procédés de fabrication des circuits intégrés / New perspectives of dimensional metrology using electron microscope imaging for process variability control in integrated circuit manufacturing

Lakcher, Amine 09 July 2018 (has links)
Dans les noeuds technologiques avancés ainsi que les technologies dérivées, des règles de dessin de plus en plus aggressives sont nécessaires. Cela conduit à une complexification des structures dans les circuits intégrés actuels. De telles structures posent un défi important aux procédés de fabrication, notamment les étapes dites de patterning que sont la lithographie et la gravure. Afin d'améliorer et d'optimiser ces structures, les designers se basent sur les règles et connaissances qu’ont les ingénieurs de leurs procédés. Ces règles ont besoin d'être alimentées par des informations dimensionnelles et structurelles de plus en plus complexes : configurations de type bord arrondi, distance entre deux bouts de lignes, rétrecissement de ligne, etc. La métrologie doit évoluer afin que les ingénieurs soient capables de mesurer et quantifier les dimensions des structures les plus complexes dans le but d'estimer la variabilité de leur procédé. Actuellement la variabilité est principalement estimée à partir de données issues du suivi en ligne de structures simples car elles sont les seules à garantir une mesure robuste et reproductible. Mais, elles peuvent difficilement être considérées comme représentatives du procédé ou du circuit. Utiliser la métrologie par CD-SEM pour mesurer des structures complexes de manière robuste est un défi technique. La création de recettes de mesures est complexe, nécessite un temps non négligeable et ne garantit pas une mesure stable. Cependant, une quantité importante d'informations est contenue dans l'image SEM. Les outils d'analyses fournis par les équipementiers permettent aujourd'hui d'extraire les contours SEM d'une structure présente dans l’image. Ainsi, le CD-SEM prend des images et la partie métrologie est réalisée hors ligne afin d'estimer la variabilité. Cette thèse vise à proposer aux ingénieurs de nouvelles possibilités de métrologie dimensionnelle afin de l’appliquer pour le contrôle des structures les plus complexes. Les contours SEM sont utilisés comme source d’information et exploités pour générer de nouvelles métriques. / In advanced technological nodes as well as derived technologies, aggressive design rules are needed. This leads to a complexity of structures in the current integrated circuits. Such structures pose a significant challenge to chip manufacturing processes, in particular patterning steps of lithography and etching. In order to improve and optimize these structures, designers need to rely on the rules and knowledge that engineers have about their processes. These rules need to be fed by complex dimensional and structural information: corner rounding, tip to tip distances, line end shortening, etc. Metrology must evolve so that engineers are able to measure and quantify the dimensions of the most complex structures in order to assess the process variability. Currently the variability is mainly quantified using data from the inline monitoring of simple structures as they are the only ones to guarantee a robust and reproducible measurement. But, they can hardly be considered as representative of the process or the circuit. Using CD-SEM metrology to measure complex structures in a robust way is a technical challenge. The creation of measurement recipes is complex, time consuming and does not guarantee a stable measurement. However, a significant amount of information is contained in the SEM image. The analysis tools provided by the equipment manufacturers allow to extract the SEM contours of a structure present in the image. Thus, the CD-SEM takes images and the metrology part is performed offline to estimate the variability.This thesis offers engineers new possibilities of dimensional metrology in order to apply it for process control of complex structures. SEM contours are used as a source of information and used to generate new metrics.
235

Phononic frequency combs

Ganesan, Adarsh January 2018 (has links)
Optical frequency combs have resulted in significant advances in optical frequency metrology and found wide application to precise physical measurements and molecular fingerprinting. A direct analogue of frequency combs in the phononic or acoustic domain has not been reported to date. This thesis describes a series of results to provide the first clear evidence for the generation of phononic frequency combs in the domain of micromechanical resonators. These results are supported by a theoretical framework which was originally developed to predict the existence of such features of combs in physical systems described by Fermi-Pasta-Ulam dynamics. The phononic frequency combs is mediated by nonlinear coupling between a primary driven mode and one or more parametrically excited internal modes. We provide experimental evidence for the formation of such phononic frequency combs in systems comprising of 2 or more coupled modes, with results qualitatively consistent with previous numerical studies based on Fermi-Pasta-Ulam dynamics. Additionally, externally pumped comb processes are also reported. Through systematic experiments at different drive frequencies and amplitudes, we portray the well-connected processes of phononic frequency comb formation and define attributes to control their concomitant features. Further, the interplay between these new nonlinear resonances and the well-established Duffing phenomenon is also discussed. While the experimental verification of the existence of phononic frequency combs is of scientific interest, several potential engineering applications exist including the unique capability to track resonant frequency of a micromechanical resonator without the requirement for an external feedback loop to sustain oscillations at the resonant frequency. The initial experimental results also demonstrate that good short-term frequency stability may be obtained for such micromechanical resonators operated under ambient conditions.
236

Model Agnostic Extreme Sub-pixel Visual Measurement and Optimal Characterization

January 2012 (has links)
abstract: It is possible in a properly controlled environment, such as industrial metrology, to make significant headway into the non-industrial constraints on image-based position measurement using the techniques of image registration and achieve repeatable feature measurements on the order of 0.3% of a pixel, or about an order of magnitude improvement on conventional real-world performance. These measurements are then used as inputs for a model optimal, model agnostic, smoothing for calibration of a laser scribe and online tracking of velocimeter using video input. Using appropriate smooth interpolation to increase effective sample density can reduce uncertainty and improve estimates. Use of the proper negative offset of the template function has the result of creating a convolution with higher local curvature than either template of target function which allows improved center-finding. Using the Akaike Information Criterion with a smoothing spline function it is possible to perform a model-optimal smooth on scalar measurements without knowing the underlying model and to determine the function describing the uncertainty in that optimal smooth. An example of empiric derivation of the parameters for a rudimentary Kalman Filter from this is then provided, and tested. Using the techniques of Exploratory Data Analysis and the "Formulize" genetic algorithm tool to convert the spline models into more accessible analytic forms resulted in stable, properly generalized, KF with performance and simplicity that exceeds "textbook" implementations thereof. Validation of the measurement includes that, in analytic case, it led to arbitrary precision in measurement of feature; in reasonable test case using the methods proposed, a reasonable and consistent maximum error of around 0.3% the length of a pixel was achieved and in practice using pixels that were 700nm in size feature position was located to within ± 2 nm. Robust applicability is demonstrated by the measurement of indicator position for a King model 2-32-G-042 rotameter. / Dissertation/Thesis / Measurement Results (part 1) / Measurement Results (part 2) / General Presentation / M.S. Mechanical Engineering 2012
237

[en] CONSIDERATIONS ON THE TEACHING OF METROLOGY AT THE TECHNICAL LEVEL WITH REFERENCE TO THE NEEDS OF THE PRODUCTIVE SECTOR / [pt] CONSIDERAÇÕES SOBRE O ENSINO DA METROLOGIA EM NÍVEL TÉCNICO INCORPORANDO DEMANDAS DO SETOR PRODUTIVO

REGINALDO DA SILVA 26 October 2005 (has links)
[pt] Os novos padrões de qualidade estimulados pelas grandes transformações ocorridas no cenário mundial vêm induzindo uma crescente demanda por conhecimento em Metrologia. A maioria dos técnicos de nível médio que atuam nos setores metrológicos das empresas não possui formação técnica de nível médio especificamente em Metrologia. Em geral, esses profissionais, ao ingressarem em empresas para atuação na área de Metrologia, precisam ser capacitados após a contratação. Geralmente, esta habilitação é efetuada através de cursos de curta duração, os quais requerem investimento financeiro e de tempo. O aumento da oferta de cursos de Metrologia em nível técnico, bem como a melhor adequação dos já existentes às reais demandas do setor produtivo são estratégias relevantes para a melhoria da produtividade das empresas. Assim, objetivando abordar esse importante tema foi elaborada a presente dissertação intitulada Considerações sobre o ensino da Metrologia em nível técnico incorporando demandas do setor produtivo. No presente trabalho foi realizada uma pesquisa exploratória através de entrevistas junto a três diferentes setores: a) setor produtivo que requer recursos humanos capacitados em Metrologia, b) profissionais experientes no ensino de Metrologia, c) formandos de um curso de Metrologia em nível técnico. Os resultados da presente pesquisa indicaram que: os setores de calibração, massa, temperatura e força são os mais exigidos da área de Metrologia nas várias empresas investigadas. Dos 171 profissionais de nível técnico que atuam nas empresas pesquisadas somente 8 possuem formação em curso de Metrologia em nível técnico. O trabalho também observou que existem dificuldades específicas na atuação profissional dos técnicos formados em curso técnico de longa duração em Metrologia. Além disso, os formandos do curso de Metrologia em nível técnico entrevistados expressaram grande interesse e entusiasmo pela Metrologia durante a sua formação, baseada em ampla grade curricular. Referenciando-se às demandas indicadas e com base nas entrevistas, foi elaborada uma matriz curricular para um curso técnico em Metrologia com duração de 2 anos. A grade curricular elaborada contribui para a adequação da formação dos profissionais de Metrologia às necessidades apontadas pelo setor produtivo, possuindo abrangência suficiente para possibilitar a maior eficiência dos profissionais no diálogo entre as várias áreas de atuação em Metrologia. Os resultados do presente trabalho podem contribuir para a melhoria da qualidade da formação de técnicos de nível médio em Metrologia, promovendo o adequado atendimento às variadas demandas do setor produtivo. / [en] New quality standards of goods and services caused by the dramatic changes in the global economy are inducing a growing demand for proficiency in Metrology. However, most technicians employed in Metrology divisions of manufacturing companies rarely possess a sound background in Metrology. Once hired, they are usually trained in the workplace. The courses are costly and timeconsuming. As a result, industry-oriented courses in Metrology are more sought after by the productive sector, in order to reduce costs and increase productivity. The aim of the present Master´s dissertation is to carry out an exhaustive survey by interviewing experts in Metrology training, professionals from the industrial sector and students in their final year of technical education in order to develop syllabi to meet the demand from the productive sector. The results indicated that the sectors of calibration and of mass, temperature and force measurements are the most in demand by the many firms investigated. Only 8 out of 171 professionals interviewed were adequately trained in Metrology. Many of those who had attend training in Metrology of long duration were unable to perform their daily metrology activities appropriately. The students expressed a growing interest in Metrology in their final year study and enthusiastically welcome a wide and diversified syllabus in Metrology. Based on our analysis, a curriculum for a two-year training programme in Metrology was proposed. The objective of the syllabus suggested here is to adapt current training of professionals in Metrology to the demands of industry and to facilitate communication between professionals of different areas of Metrology.
238

Stříbrné mincovnictví pozdní doby římské (od doby Arkádia a Honoria do konce 5. století našeho letopočtu) / Late Roman Silver Coinage (from Arcadius and Honorius to the end of the 5th century AD)

Gambacorta, Federico January 2014 (has links)
This PhD research has furnished the occasion to update the outdated works about Late Roman coinage focusing especially on a topic not so commonly examined like the Late Roman silver coinage. More precisely, it is analysed and discussed some of its more intriguing aspects. First of all how silver, as metal, was considered and perceived in Late Roman society and, therefore, why during fifth century AD silver bullion was used to produce fine silver objects rather than coins. Two different Late Roman customs concerning silver coinage are then reviewed: hoarding, with a list of most recent findings, and clipping. Finally a chapter is dedicated to the metrology and fineness of Late Roman silver coins together with an accurate analysis of the 7 different denominations. This extensive and deep discussion about Late Roman silver coinage's main problematics is completed by the most recent and updated catalogue of all the Late Roman silver denominations known so far. Such a review has given not only the possibility of updating or modifying some of the previous theories but also the opportunity to suggest some new ideas. --------------------------------------- Podrobně jsou zkoumány některé konkrétní zásadsní otázky, především jakým způsobem bylo v pozdně římské společnosti vnímáno stříbro jako kov a proč tedy...
239

[en] UNCERTAINTY OF MEASUREMENT IN ARTIFICIAL NEURAL NETWORKS APPLIED ON THE PREVENTATIVE MAINTENANCE OF TRANSFORMERS / [pt] INCERTEZA DE MEDIÇÃO EM REDES NEURAIS ARTIFICIAIS APLICADAS À MANUTENÇÃO PREDITIVA DE TRANSFORMADORES

CHRISTIANE SAMPAIO DE ALMEIDA GUSMAN 30 March 2012 (has links)
[pt] Diversas pesquisas sobre monitoramento e diagnóstico de equipamentos do sistema elétrico foram iniciadas com o objetivo de elevar a garantia e confiabilidade no sistema. Autores, não somente no Brasil, desenvolveram pesquisas sobre o tema, dentre eles (Bengtson, 1996; Kovacevic & Dominelli, 2003; Freitas, 2000). O objetivo é garantir a confiabilidade dos equipamentos instalados e incrementar o desempenho aumentando a vida útil dos mesmos. Nesse contexto (Freitas, 2000; Cavaleiro, 2003; dentre outros) discorrem sobre o tema. As redes neurais artificiais são utilizadas como uma das possíveis ferramentas disponíveis para análise, diagnóstico e monitoramento de equipamentos. A inovação deste trabalho está em apresentar uma nova metodologia desenvolvida para analisar a propagação das incertezas de medição das variáveis de entrada em redes neurais artificiais aplicadas à Manutenção Preditiva de Transformadores. Com base nos conceitos da metrologia foram analisados não somente os dados de entrada como também a incerteza de medição associadas aos mesmos. O método desenvolvido permite que se estime a incerteza de medição das variáveis de saída, contribuindo para a avaliação da confiabilidade de modelagens baseadas em redes neurais. Também foi realizado um estudo de caso, no qual se avaliou a propagação das incertezas de medição em sete redes neurais destinadas a estimar a concentração dos gases (saídas das redes) dissolvidos no óleo de transformadores de potência, com base nas características físico-químicas do óleo (variáveis de entrada). A metodologia utilizada baseou-se na introdução de perturbações na entrada das redes analisadas e na consequente análise de como estas perturbações afetam a saída das redes, permitindo-se assim calcular os coeficientes de sensibilidade de cada entrada. Em seguida, combinando-se as incertezas de medição das variáveis de entrada (disponíveis nos certificados de calibração dos instrumentos utilizados nas respectivas medições), por meio dos coeficientes de sensibilidade, é possível estimar a incerteza de medição das variáveis de saída. / [en] Research about monitoring and diagnostics of electrical system equipment was initiated with the objective of upgrading the guarantee and trust of a system. Authors, not only in Brazil, have developed research about the subject, among them (Bengtson, 1996; Kovacevic & Dominelli, 2003; Freitas, 2000). The objective is to guarantee the confidence in the equipment installed and enhance the performance and increase the durability of the equipment. Within this context (Freitas, 2000; Cavaleiro, 2003; among others) talk about this subject. The artificial Neural Networks are used as one of the possible available tools for analysis, diagnostics and monitoring of equipment. The innovation of this paper is to present a new methodology developed to analyze the propagation of uncertainty measurement variables of input in artificial neural networks applied to predictive maintenance of transformers. Based on the concepts of metrology, not only the input data was analyzed but also the uncertainty measurements that were associated with the equipment. The method that was developed allows us to estimate the measurement of uncertainty of output variables, contributing to the evaluation of confidence of models based on neural networks. There was also a case study, in which the propagation of uncertainties of measurement were evaluated within seven designated neural networks to estimate the concentration of gases (output of the networks) dissolved in potency transformer oil, based on the physical-chemical characteristics of the oil (input variables). The methodology that was utilized was based on the introduction of perturbation at the input of the networks that were analyzed and the consequent analysis of how these perturbation affect the output of the networks, this way allowing the calculation of the coefficients of sensibility of each entry. Then we match the input variables of the uncertainty measurements (available on the calibration certificates of the instruments utilized on the respective measurements), through the coefficients of sensibility, it is possible to estimate the output variables of the uncertainty measurements.
240

[en] METROLOGY, STANDARDIZATION AND REGULATION OF NANOMATERIALS IN BRAZIL: A PROPOSAL FOR AN ANALYTICALPROSPECTIVE MODEL / [pt] METROLOGIA, NORMALIZAÇÃO E REGULAÇÃO DE NANOMATERIAIS NO BRASIL: PROPOSIÇÃO DE UM MODELO ANALÍTICO-PROSPECTIVO

ANA RUSMERG GIMÉNEZ LEDESMA 24 May 2011 (has links)
[pt] O objetivo da dissertação é propor um modelo analítico-prospectivo como ferramenta de apoio a processos decisórios em questões referentes à metrologia, normalização e regulação de nanomateriais no Brasil, baseando-se em referenciais internacionais e iniciativas em curso no mundo. No contexto do desenvolvimento da nanotecnologia no Brasil, a motivação da pesquisa é destacar a importância e os benefícios para o país da metrologia, normalização e regulação de nanomateriais, na perspectiva de aplicação do modelo pelos principais grupos de interesse comprometidos com o desenvolvimento responsável desses novos materiais. A metodologia compreende: (i) pesquisa bibliográfica e documental; (ii) levantamento de iniciativas referentes à metrologia, normalização e regulação de nanotecnologia em nível internacional; (iii) desenvolvimento de um modelo conceitual que integre as três funções – metrologia, normalização e regulação de nanomateriais; e (iv) elaboração do instrumento de pesquisa survey e da ferramenta para a construção de roadmaps estratégicos. Destacam-se como resultados: (i) visão global dos referenciais externos sobre metrologia, normalização e regulação de nanomateriais, em geral, e de nanopartículas, em particular; (ii) o modelo analítico-prospectivo; e (iii) o instrumento de pesquisa survey para a construção de indicadores nacionais e a ferramenta de construção de roadmaps estratégicos das atividades de metrologia, normalização e regulação de nanomateriais no Brasil. / [en] The main objective of this dissertation is to propose an analyticalprospective model as a tool to support decision-making processes concerning metrology, standardization and regulation of nanomaterials in Brazil, based on international references and ongoing initiatives in the world. In the context of nanotechnology development in Brazil, the motivation for carrying out this research is to identify potential benefits of metrology, standardization and regulation of nanomaterials production, within the perspective of applying the model in the country, by the main stakeholders in these areas. The methodology encompasses: (i) bibliographical and documental review on metrology, standardization and regulation of nanomaterials, in general, and nanoparticles, in special; (ii) review of international studies concerning dissertation’s central themes; (iii) development of a conceptual model that integrates the three functions - metrology, standardization and regulation of nanomaterials; (iv) development of a survey questionnaire and a strategic roadmapping tool. The main results can be summarized as follows: (i) an overview of international studies on metrology, standardization and regulation of nanomaterials, and nanoparticles, in special; (ii) the analytical-prospective model; and (iii) the survey questionnaire and the roadmapping tool for metrology, standardization and regulation of nanomaterials in Brazil, based on international references and ongoing initiatives in the world.

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