The thesis deals with a parametric analysis of a magnetic multiband antenna and explains the principle of its operation. In the thesis, an optimization of the antenna by the particle swarm optimization is performed in order to meet impedance matching in prescribed frequency bands.

The aim of the work is to study the electromagnetic field theory, finite element method and the interaction of electromagnetic field with tissues. Gained knowledge is then used to calculate spreading of the electromagnetic field in the microwave field and to create a temperature profile of spreading the electromagnetic fields in human tissue. The finite element method was implemented in the Matlab programming environment, where the 1D model was created in the frequency and time domain and a simple 2D model created in time domain. The program was developed to analyze spreading electromagnetic wave. Another part of work was done in the programming environment of COMSOL Multiphysics. In this case was the human leg exposed to electromagnetic fields. The analysis determined the changes of temperature in these biological tissues for six minutes.

This thesis deals with the basic theory of the electromagnetic field in the first part and the field interactions with biological tissues. Than describes shortwave diathermy as a technique used for purposes of medical treatment. The aim is to built a model of tissue heating in shortwave diathermy in COMSOL Multiphysics environment, so there is included a description of the programming environment, including the mathematical method that COMSOL uses for calculations. The output of the whole work is a model of the lower limb in the knee part and display the results after his diathermy heating.

<div>Electrochemical energy storage devices play an integral role in the energy transition from fossil fuels to renewable. Still, technological breakthroughs are warranted to expand this progress and enable their use where hydrocarbons are still the dominant option. The requirements restricting further adoption of electrochemical devices are related to energy density, hampering costs of raw materials with the increased global demand, and safety in large scale operations. Furthermore, new applications in flexible electronics add new requisites to this list. Pushing these limits involves multidisciplinary efforts where the mechanics are a crucial part.</div><div> </div><div>This thesis explores the mechanical and kinetic behaviors of batteries at the nano to micro-meter scale through operando mechanical and optical characterization during ongoing electrochemical reactions. A unique experimental platform that enables simultaneous nanoindentation and electrochemical testing of active materials is developed. The validity of mechanical testing during operation in the customized liquid cell is systematically addressed. The evolution of the mechanical properties of electrodes as a function of lithium concentration is probed in real-time. This functional dependence between mechanical properties and composition is then used to introduce the concept of mechanics-informed chemical profiling. This new capability enables characterizing transport kinetics in a detailed and quantitative way, including the role of pressure gradients on diffusion. Pairing these experiments with multi-physics modeling led to a new understanding of the mechanisms regulating charging-rate capability and capacity loss in Li-ion batteries. Experiments on composite electrodes showed that liquid electrolytes change the mechanical properties of both conductive matrix and secondary particles. These observations help understand the interactions between the different components of a battery and demonstrate the need for in-situ mechanical characterization capabilities. </div>

Growing regions and tighter zoning in urban areas are pushing the hydrological bal-ances to establish new equilibriums which are causing a stress on the groundwater. Urbanization can affect the groundwater in several ways in which both raising and lowering of groundwater tables are a possibility. Both ways, sudden changes may bring on socioeconomic costs for the unprepared. Hydrogeological modelling creates the possibilities to visualise processes that cannot be seen with the naked eye. By combin-ing knowledge about the studied area from tests and measurements a conceptual model and additionally a numerical model can be created. To study the magnitude groundwater sensitivity to changes in land-cover a hydrogeological model was created using COMSOL multiphysics within the frame of a case study concerning a horse racetrack located in Täby, north of Stockholm. The model was calibrated against known data and was the applied on a future scenario where both the land-use and climate were changed. The outcome of the model showed that hydrogeological mod-elling is sensitive to the amount and quality of the in-data. Several insecurities in the results can be traced back to a lack of base material and by changing one parameter the result of other calibrated parameters would also change. Equifinality could thus be established to be a major issue when performing groundwater modelling. Further studies of relevant data requirements for different model objectives are required.

A series of composite beam models are constructed for efficient high-fidelity beam analysis based on the variational-asymptotic method (VAM). Without invoking any a priori kinematic assumptions, the original three-dimensional, geometrically nonlinear beam problem is rigorously split into a two-dimensional cross-sectional analysis and a one-dimensional global beam analysis, taking advantage of the geometric small parameter that is an inherent property of the structure. The thermal problem of composite beams is studied first. According to the quasisteady theory of thermoelasticity, two beam models are proposed: one for heat conduction analysis and the other for thermoelastic analysis. For heat conduction analysis, two different types of thermal loads are modeled: with and without prescribed temperatures over the crosssections. Then a thermoelastic beam model is constructed under the previously solved thermal field. This model is also extended for composite materials, which removed the restriction on temperature variations and added the dependence of material properties with respect to temperature based on Kovalenoko’s small-strain thermoelasticity theory. Next the VAM is applied to model the multiphysics behavior of beam structure. A multiphysics beam model is proposed to capture the piezoelectric, piezomagnetic, pyroelectric, pyromagnetic, and hygrothermal effects. For the zeroth-order approximation, the classical models are in the form of Euler-Bernoulli beam theory. In the refined theory, generalized Timoshenko models have been developed, including two transverse shear strain measures. In order to avoid ill-conditioned matrices, a scaling method for multiphysics modeling is also presented. Three-dimensional field quantities are recovered from the one-dimensional variables obtained from the global beam analysis. A number of numerical examples of different beams are given to demonstrate the application and accuracy of the present theory. Excellent agreements between the results obtained by the current models and those obtained by three-dimensional finite element analysis, analytical solutions, and those available in the literature can be observed for all the cross-sectional variables. The present beam theory has been implemented into the computer program VABS (Variational Asymptotic Beam Sectional Analysis).

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both piezoelectric materials). This piezoelectric effect can be triggered by voltage applied to the device's gate contact and the existence of an HEMT-unique "two-dimensional electron gas" (2DEG) at the GaN-AlGaN interface. COMSOL Multiphysics computer software has been utilized to create a finite element (i.e. piece-by-piece) simulation to visualize both temperature and stress/strain distributions that can occur in the device, by coupling together (i.e. solving simultaneously) the thermal, electrical, structural, and piezoelectric effects inherent in the device. The 2DEG has been modeled not with the typically-used self-consistent quantum physics analytical equations, rather as a combined localized heat source* (thermal) and surface charge density* (electrical) boundary condition. Critical values of stress/strain and their respective locations in the device have been identified. Failure locations have been estimated based on the critical values of stress and strain, and compared with reports in literature. The knowledge of the overall stress/strain distribution has assisted in determining the likely device failure mechanisms and possible mitigation approaches. The contribution and interaction of individual stress mechanisms including piezoelectric effects and thermal expansion caused by device self-heating (i.e. fast-moving electrons causing heat) have been quantified. * Values taken from results of experimental studies in literature

Ces dernières décennies, la mécanique des solides est allée au-delà de ses problématiques originelles ayant trait aux propriétés mécaniques des matériaux et des structures pour embrasser des questions issues d'autres champs scientifiques et en particulier de la physique. Les semi-conducteurs, matériaux de base de tous les dispositifs électroniques, sont un bon exemple où des solides cristallins présentent des couplages multiphysiques. En effet, la mécanique y joue un rôle important, à la fois dans le processus de fabrication et dans l'utilisation des dispositifs électroniques. Dans ce travail, nous examinons ces deux aspects en étudiant dans une première partie les couplages entre les phénomènes de transport électronique et les déformations mécaniques et dans une seconde partie les instabilités morphologiques qui apparaissent lors de la croissance épitaxiale des semi-conducteurs.Premièrement, en développant une théorie entièrement couplée des semi-conducteurs déformables qui inclut les champs mécaniques, électrique et électroniques, nous montrons, pour la première fois, l'existence d'une contribution électronique à la contrainte mécanique. Alors que pour les semi-conducteurs cristallins cette contribution est faible, l'effet des déformations sur le transport électronique demeure important par les modifications qu'elles induisent sur les niveaux d'énergie de bandes, les densités d'états et la mobilité des électrons et des trous. Compte tenu de l'avènement de nouvelles technologies d'électronique flexible, nous mettons en pratique la théorie générale pour calculer, au moyen de développements asymptotiques, l'effet de la flexion - qui entraîne des déformations non uniformes - sur la caractéristique courant-tension d'une jonction p-n, la brique élémentaire des cellules solaires. Pour compléter ce tableau, nous mesurons les changements induits par des contraintes uniaxiales sur la caractéristique électronique de cellules solaires silicium à hétérojonction.Dans la deuxième partie de ce travail, en descendant à l'échelle atomique, nous étudions le phénomène de la croissance épitaxiale sur des surfaces vicinales. Sur ces surfaces, le cristal croît par propagation de marches atomiques, qui peuvent développer de la mise en paquets, une instabilité par laquelle l'espacement régulier entre marches est brisé, donnant lieu à un motif alternant entre de larges terrasses atomiques et des paquets de marches. Au travers d'une analyse de stabilité linéaire exhaustive des équations de la dynamique des marches, nous discutons de l'influence de chaque mécanisme physique sur l'instabilité de la mise en paquets. En particulier, nous clarifions l'incidence sur la stabilité de la dynamique, de l'effet de saut d'adatomes ainsi que de l'élasticité, au-delà de l'hypothèse d'interactions de plus proches voisins. De plus, nous montrons que nos résultats généraux de stabilité, c'est-à-dire obtenus sans négliger les termes dynamiques, sont significativement différents de ceux obtenus avec l'approximation quasi-statique, et ce, même dans les régimes de déposition ou d'évaporation lentes où cette dernière était considérée comme suffisante. Non seulement intéressants d'un point de vue théorique, ces nouveaux résultats fournissent des explications possibles pour certains cas de mise en paquets observés sur le silicium et l'arséniure de gallium. Compte tenu de ces nouveaux aspects, nous réexaminons le phénomène de la mise en paquets sous électromigration et montrons que les effets de saut d'adatomes et de la dynamique n'affectent pas la dépendance de la stabilité à la direction du courant d'électromigration.Enfin, nous étudions les propriétés mécaniques, à l'échelle atomique, d'un autre matériau cristallin aux propriétés semi-conductrices, le graphène polycristallin. En utilisant des simulations de dynamique moléculaire, nous développons un modèle de zone cohésive pour la rupture le long des joints de grains. / In the last decades, solid mechanics has gone beyond its original issues of mechanical properties of materials and structures to embrace problems coming from other scientific fields and in particular physics. Semiconductors, the base materials of all electronic devices, are a prime example where crystalline solids show multiphysics couplings. Indeed, mechanics plays there an important role both in the fabrication process and in the operation of electronic devices. In this work, we examine these two aspects by studying first the couplings between electronic transport phenomena and mechanical deformations and second the morphological instabilities that develop in semiconductor epitaxial growth.First, developing a fully-coupled theory of deformable semiconductors that includes mechanical, electrical and electronic fields, we show for the first time the existence of an electronic contribution to mechanical stress. While for crystalline semiconductors this contribution is weak, the effect of strains on electronic transport remains significant through their modification on band energy levels, density of states and mobility of electrons and holes. Considering the advent of new technologies of flexible electronics, we apply the general theory to compute through asymptotic expansions, the effect of bending -causing non-uniform strains- on the current-voltage characteristic of a p-n junction, the basic device of solar cells. To complete this picture, we measure the changes induced by uniaxial stresses on the electronic characteristic of a silicon heterojunction solar cell.In the second part of this work, going down to the atomic scale, we consider the problem of epitaxial growth on vicinal surfaces. On these surfaces, the crystal grows through the propagation of the atomic steps, which may develop step bunching, an instability whereby the regular step spacing breaks down, resulting in an alternating pattern of wide atomic terraces and step bunches. Through a comprehensive linear stability analysis of the step dynamics governing equations, we discuss the influence of each physical mechanism on the step bunching instability. In particular, we clarify the impact on stability of the dynamics, of the recently pointed out adatom jump effect, and of elasticity, beyond the assumption of nearest-neighbor interactions. In addition, we show that our general stability results, i.e., obtained without neglecting the dynamics terms, are significantly different from those derived with the quasistatic approximation, even in regimes of slow deposition or evaporation where the latter was considered sufficient. Not only valuable from a theoretical prospective, these new results provide possible explanations for some cases of step bunching observed in silicon and gallium arsenide. In view of these new aspects, we reexamine the problem of step bunching under electromigration and show that the adatom jump and dynamics effects do not affect the stability dependence on the direction of the electromigration current.Finally, we investigate the mechanical properties at the atomic scale of another crystalline material with semiconducting properties, polycrystalline graphene. Using molecular dynamic simulation, we develop a cohesive zone model for fracture along grain boundaries.

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