Este trabalho estuda os efeitos de dose total ionizante (TID – Total Ionizing Dose) em amplificadores operacionais e em seus blocos básicos de construção. A radiação ionizante presente no espaço pode afetar o funcionamento das estruturas MOS, sendo que um dos parâmetros mais prejudicados é a tensão de limiar (Threshold Voltage). Em virtude da diferença nos mecanismos de aprisionamento de cargas nos óxidos dos transistores do tipo N e do tipo P, esses dois dispositivos exibem comportamentos distintos à medida que a dose acumulada aumenta referente à tensão de limiar. Por isso, foram investigados os comportamentos de dois tipos de amplificadores que podem ser ditos complementares entre si. Nesse contexto, através de simulações SPICE desvios na tensão de limiar foram promovidos através da injeção direta no arquivo de parâmetros da tecnologia considerada. Com isso, um conjunto de simulações foi feito para gerar a estimativa da tendência de comportamento de parâmetros que qualificam o desempenho dos amplificadores operacionais, como é o caso do produto ganho largura de banda (GB), ganho DC e THD (Total Harmonic Distortion). Nesse sentido, foi possível compreender os mecanismos associados à degradação de desempenho e concluir qual das duas arquiteturas pode apresentar melhor desempenho relacionado à TID. / This work studies the effects of Total Ionizing Dose (TID) in operational amplifiers as well as in their basics building blocks. The radiation from space may affect functionality of MOS structures. One the most affected parameters is the threshold voltage. Due to the difference between N-type and P-type transistors related to the mechanism of charge trapping into the oxides, these two devices exhibit different behaviors, related to the threshold voltage parameter according to accumulated dose. Therefore, this work investigates the behavior of two counterpart operational amplifiers. In this context, by means of SPICE simulations, threshold deviations are injected into the transistors by modifying the technology models of the devices. Thus, a set of simulations was performed in order to generate an estimative of tendency for some of performance parameters of operational amplifiers, such as: the gain-bandwidth product (GB), DC gain, THD (Total Harmonic Distortion). In this sense, it was possible to understand the mechanisms associated to performance degradation and also, to conclude which of both architectures is more robust related to TID.

Este trabalho estuda os efeitos de dose total ionizante (TID – Total Ionizing Dose) em amplificadores operacionais e em seus blocos básicos de construção. A radiação ionizante presente no espaço pode afetar o funcionamento das estruturas MOS, sendo que um dos parâmetros mais prejudicados é a tensão de limiar (Threshold Voltage). Em virtude da diferença nos mecanismos de aprisionamento de cargas nos óxidos dos transistores do tipo N e do tipo P, esses dois dispositivos exibem comportamentos distintos à medida que a dose acumulada aumenta referente à tensão de limiar. Por isso, foram investigados os comportamentos de dois tipos de amplificadores que podem ser ditos complementares entre si. Nesse contexto, através de simulações SPICE desvios na tensão de limiar foram promovidos através da injeção direta no arquivo de parâmetros da tecnologia considerada. Com isso, um conjunto de simulações foi feito para gerar a estimativa da tendência de comportamento de parâmetros que qualificam o desempenho dos amplificadores operacionais, como é o caso do produto ganho largura de banda (GB), ganho DC e THD (Total Harmonic Distortion). Nesse sentido, foi possível compreender os mecanismos associados à degradação de desempenho e concluir qual das duas arquiteturas pode apresentar melhor desempenho relacionado à TID. / This work studies the effects of Total Ionizing Dose (TID) in operational amplifiers as well as in their basics building blocks. The radiation from space may affect functionality of MOS structures. One the most affected parameters is the threshold voltage. Due to the difference between N-type and P-type transistors related to the mechanism of charge trapping into the oxides, these two devices exhibit different behaviors, related to the threshold voltage parameter according to accumulated dose. Therefore, this work investigates the behavior of two counterpart operational amplifiers. In this context, by means of SPICE simulations, threshold deviations are injected into the transistors by modifying the technology models of the devices. Thus, a set of simulations was performed in order to generate an estimative of tendency for some of performance parameters of operational amplifiers, such as: the gain-bandwidth product (GB), DC gain, THD (Total Harmonic Distortion). In this sense, it was possible to understand the mechanisms associated to performance degradation and also, to conclude which of both architectures is more robust related to TID.

Este trabalho estuda os efeitos de dose total ionizante (TID – Total Ionizing Dose) em amplificadores operacionais e em seus blocos básicos de construção. A radiação ionizante presente no espaço pode afetar o funcionamento das estruturas MOS, sendo que um dos parâmetros mais prejudicados é a tensão de limiar (Threshold Voltage). Em virtude da diferença nos mecanismos de aprisionamento de cargas nos óxidos dos transistores do tipo N e do tipo P, esses dois dispositivos exibem comportamentos distintos à medida que a dose acumulada aumenta referente à tensão de limiar. Por isso, foram investigados os comportamentos de dois tipos de amplificadores que podem ser ditos complementares entre si. Nesse contexto, através de simulações SPICE desvios na tensão de limiar foram promovidos através da injeção direta no arquivo de parâmetros da tecnologia considerada. Com isso, um conjunto de simulações foi feito para gerar a estimativa da tendência de comportamento de parâmetros que qualificam o desempenho dos amplificadores operacionais, como é o caso do produto ganho largura de banda (GB), ganho DC e THD (Total Harmonic Distortion). Nesse sentido, foi possível compreender os mecanismos associados à degradação de desempenho e concluir qual das duas arquiteturas pode apresentar melhor desempenho relacionado à TID. / This work studies the effects of Total Ionizing Dose (TID) in operational amplifiers as well as in their basics building blocks. The radiation from space may affect functionality of MOS structures. One the most affected parameters is the threshold voltage. Due to the difference between N-type and P-type transistors related to the mechanism of charge trapping into the oxides, these two devices exhibit different behaviors, related to the threshold voltage parameter according to accumulated dose. Therefore, this work investigates the behavior of two counterpart operational amplifiers. In this context, by means of SPICE simulations, threshold deviations are injected into the transistors by modifying the technology models of the devices. Thus, a set of simulations was performed in order to generate an estimative of tendency for some of performance parameters of operational amplifiers, such as: the gain-bandwidth product (GB), DC gain, THD (Total Harmonic Distortion). In this sense, it was possible to understand the mechanisms associated to performance degradation and also, to conclude which of both architectures is more robust related to TID.

Orientadores: Jacobus Willibrordus Swart, Jader Alves de Lima Filho / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-08T17:33:52Z (GMT). No. of bitstreams: 1 Agostinho_PetersonRibeiro_M.pdf: 4830694 bytes, checksum: d3db6a2118db3df2774037e49df52865 (MD5) Previous issue date: 2006 / Resumo: Este trabalho descreve o procedimento de projeto de amplificadores operacionais rail-to-rail em tecnologia CMOS. Para isto, foram objetos desse processo quatro configurações distintas. As quatro topologias utilizam estágio de entrada rail-to-rail com controle de gm e estágio de saída classe-AB com controle de corrente quiescente. Como especificação para as três primeiras configurações estão tensão de alimentação de ± 0.9V, ganho de manha aberta em baixas freqüências de 60dB e freqüência de ganho unitário de 4MHz para uma carga externa de 10k? em paralelo com 10pF. A quarta configuração é uma nova topologia adaptada para que os transistores operem na região de inversão fraca, com o objetivo de reduzir o consumo de potência. Como especificação para esta configuração temos tensão de alimentação de ± 0.75V e minimização do consumo de potência. Os resultados obtidos a partir dos protótipos fabricados em tecnologia CMOS 0.35µm foram próximos às especificações. Uma placa de circuito impresso foi implementada para caracterização dos amplificadores e, além disso, foi utilizado nessa placa um amplificador comercial para realizar comparações / Abstract: This dissertation describes the process of designing rail-to-rail operational amplifiers in CMOS technology. To accomplish this, the author focused on four distinct structures. The four topologies have rail-to-rail input stage with gm-control circuit and Class-AB output stage with quiescent-current control. The specification of three configurations included the nominal power supply of ± 0.9V, minimum open-loop low-frequency gain of 60dB and unity-gain frequency of 4MHz driving an external load of 10k? in parallel with 10pF. The fourth one is a new topology adapted to operate with transistors in weak inversion, in order to decrease the power consumption. The specification included nominal power supply of ± 0.75V and minimization of power consumption. Prototypes of the amplifiers were fabricated in 0.35µm CMOS technology and the results were in good agreements with the specifications. A printed circuit board was implemented to test the amplifiers and, additionally, was inserted a commercial amplifier, to make comparisons / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Είναι γνωστό ότι τα κυκλώματα των τελεστικών ενισχυτών (Op-Amps) είναι από τις βασικότερες δομικές βαθμίδες στον χώρο της σχεδίασης αναλογικών ολοκληρωμένων κυκλωμάτων. Μια εναλλακτική δομή του τελεστικού ενισχυτή αποτελεί το κύκλωμα ενός Current Feedback Operational Amplifier (CFOA). Ένας CFOA είναι ουσιαστικά ένας μεταφορέας ρεύματος (Current Conveyor-CCII) σε σειρά με έναν ακολουθητή τάσης (Voltage Follower), και είναι ιδιαιτέρως χρήσιμος κατά την σχεδίαση κυκλωμάτων χαμηλής τάσης τροφοδοσίας. Στην εργασία αυτή μελετήθηκαν τέσσερις δομές CFOA, σχεδιασμένες για λειτουργία με χαμηλή τάση τροφοδοσίας, και χρησιμοποιήθηκαν για τον σχεδιασμό φίλτρων με τις μεθόδους Leapfrog, τοπολογικής εξομοίωσης και κυματική. Στο πρώτο κεφάλαιο αναφέρονται οι γενικές αρχές που ισχύουν στην σχεδίαση κυκλωμάτων για λειτουργία με χαμηλή τάση τροφοδοσίας καθώς και τις πιο συχνά χρησιμοποιούμενες τεχνικές σχεδίασης. Στο δεύτερο κεφάλαιο μελετώνται αναλυτικά οι τέσσερις δομές CFOA συγκρίνοντας τους βασικότερους παράγοντες απόδοσής τους. Τα κυκλώματα των CFOA που μελετώνται βασίζονται σε πρόσφατα δημοσιευμένες δομές Current Conveyor (CCII). Στο τρίτο κεφάλαιο αναλύεται η μέθοδος σχεδίασης φίλτρων Leapfrog, και χρησιμοποιείται για την σχεδίαση ενός Butterworth φίλτρου 3ης τάξης. Ως δομική βαθμίδα για την σχεδίαση αυτού του φίλτρου χρησιμοποείται ο CFOA [2]. Το τρίτο κεφάλαιο ολοκληρώνεται με την παρουσίαση των βασικότερων παραγώντων απόδοσης. Στο τέταρτο κεφάλαιο παρουσιάζεται η τοπολογική μέθοδος σχεδίασης φίλτρων, στην οποία γίνεται τοπολογική αντικατάσταση πηνίου, σε παθητικό φίλτρο, από ισοδύναμο κύκλωμα με ενεργά στοιχεία. Και στην περίπτωση αυτή η δομική μονάδα σχεδιασμού είναι ο CFOA [2]. Στο πέμπτο κεφάλαιο παρουσιάζεται η σχεδίαση ενός Butterworth φίλτρου 3ης τάξης με την κυματική μέθοδο. Η σχεδίαση πραγματοποιήθηκε χρησιμοποιώντας ως δομική βαθμίδα τον CFOA [1]. Στο έκτο κεφάλαιο παρουσιάζεται η φυσική σχεδίαση (layout) του Butterworth φίλτρου 3ης τάξης που σχεδιάστηκε με την leapfrog μέθοδο στο τρίτο κεφάλαιο. Η φυσική σχεδίαση πραγματοποιήθηκε με την χρήση του λογισμικού Cadence και του περιβάλλοντος Virtuoso που περιλαμβάνει για την φυσική σχεδίαση αναλογικών ηλεκτρονικών κυκλωμάτων . Τέλος στο έβδομο κεφάλαιο γίνεται σύγκριση των αποτελεσμάτων εξομοίωσης των δομών CFOA’s αλλά και των αποτελεσμάτων εξομοίωσης των φίλτρων που σχεδιάστηκαν στα παραπάνω κεφάλαια . Επίσης παρουσιάζονται κάποιες προτάσεις για μελλοντική και περαιτέρω έρευνα. / Operational amplifier is one of most important analog building block. An alternative structure for operational amplifier is a Current Feedback Operational Amplifier (CFOA). A CFOA is essentially consists of a current conveyor (CCII) connecting with a Voltage Follower (VF). The usage of CFOA for the low-voltage analog IC design is quite useful. In this work four different CFOA structures, designed for low-voltage operation, were considered. Also the aforementioned CFOAs were used to build a butterworth filter with Leapfrog method, topological simulation method and wave method. In first chapter the basic design rules and the most common design techniques for low-voltage IC design is presented. In chapter 2 the four structures of CFOAs circuits were considered, under the light of comparison of most critical factors of operation. The CFOAs circuits were based in most resent published topologies of Current Conveyor (CCII). In chapter 3 the Leapfrog method for filters design was discussed. Also a 3rd order butterworth filter is designed based on this method. The CFOA of ref [2] is the main building lock to construct this filter. In chapter 4 another method for filter design is presented named topological simulation method. According to this method passive elements such as inductors and capacitors are replaced by active elements. The main building block is also CFOA of ref [2]. In Chapter 5 a 3rd order butterworth filter based on wave method is designed. In this case the main building block was the CFOA circuit of ref [1]. Chapter 6 presents the layout of the 3rd order butterworth filter which designed at chapter 3 with leapfrog method. The layout design was implemented using Virtuoso environment of Cadence design framework II platform. Chapter 7 conclude this work presenting the simulated comparison results for all four CFOAs circuits and the 3rd order butterworth filters that were designed with the three different methods. Some thoughts for further research in the this subject are also presented.

This Master thesis deals with low-current measurement in order of picoamps up to a few tens of femtoamps. Such low currents measuring is necessary for determination of air ions concentration. Disturbances, which are otherwise negligible for ordinary measurements must be considered. For example, leakage currents and noise generated in measuring device circuit. The choice of a precise operation amplifier with low input bias current is as important as the selection of low noise passive components. The aim of the thesis is to design and implement a precise low-level amplifier for the purposes of air ions concentration measurements.

The performance of analog integrated circuits is dependent on the technology. Digital circuits are scalable in nature, and the same circuit can be scaled from one technology to another with improved performance. But, in analog integrated circuits, the circuit components must be re-designed to maintain the desired performance across different technologies. Moreover, in the case of digital circuits, minimum feature-size (short channel length) devices can be used for better performance, but analog circuits are still being designed using channel lengths larger than the minimum feature sizes. The research in this thesis is aimed at understanding the impact of technology scaling and short channel length devices on the performance of analog integrated circuits. The operational amplifier (op amp) is chosen as an example circuit for investigation. The performance of the conventional op amps are studied across different technologies for short channel lengths, and techniques to develop technology-independent op amp architectures have been proposed. In this research, three op amp architectures have been developed whose performance is relatively independent of the technology and the channel length. They are made scalable, and the same op amp circuits are scaled from a 0.25 um CMOS onto a 0.18 um CMOS technology with the same components. They are designed to achieve large small-signal gain, constant unity gain-bandwidth frequency and constant phase margin. They are also designed with short channel length transistors. Current feedback, gm-boosted, CMOS source followers are also developed, and they are used in the buffered versions of these op amps.

The electronics industry has developed incredibly in last few years and the need for low voltage and low power consuming devices is reflected with its growth. A small extension in battery life can be reflected in an order of magnitude in terms of retail prices. From multimedia gadgets (like laptops, mobiles, notebook etc.) to the biomedical device, all applications have seen a rapid advancement. All these devices need a low voltage and low power transceiver to connect with the wireless networks. This PhD thesis is focused on the development of new designing techniques for low voltage, low power integrated circuits, having close attention on circuits suitable for analog devices. The vast majority of high performance analog circuit cells realized in metal–oxide–semiconductor field-effect transistor (MOSFET) technologies traditionally exploits transistors operating in saturation. Meanwhile there exists a region of weak inversion, which was left unexploited until recently, where the behavior of a MOS transistor is similar to a bipolar transistor in qualitative terms. This region could be exploited for the devices which require operating with low voltage supply. Instead of operating in saturation region, the MOS devices employed in this design, operate in weak inversion. The MOS devices in the proposed circuits are bulk-controlled. In the conventional mode of biasing the bulk terminal is left unused and is connected with lowest supply voltage or ground while the gate is usually chosen for the input signal introduction to bias the circuit. The bulk can be used as an input for signal, can lower the threshold of a transistor if biased properly, ultimately lowering the supply voltage requirement of the transistor. In this work a modified Nauta’s Transconductor, which operates on very low voltages and have a tunable transconductance is employed to design filters. The filter constructed can be tuned in the range of few MHz. The proposed filter is operated using a 0.5V supply and its cutoff frequency can be easily adjusted. All circuits are designed and analyzed using a triple well 0.13μm CMOS process. This OTA is further modified to achieve better performance, in order to implement it in a complex filter. In low IF devices the down-conversion of image signal along with the wanted signal at the same frequency is a major problem. Complex filter can easily remove this image signal by applying a frequency shifting operation. A sixth order complex filter by implementing Leapfrog technique is designed using the differential OTA. The filter is designed to meet the Bluetooth and Zigbee standard requirements. The filter operates on a 0.5V supply voltage, and has very good results for Image rejection, sensitivity, noise and the filter is orthogonally tunable. The performance of the filter has been evaluated through simulation results by employing a triple well 0.13μm CMOS process. This filter design can be implemented in the Bluetooth devices used for the biomedical applications. / Η βιομηχανία της ηλεκτρονικής έχει αναπτυχθεί απίστευτα τα τελευταία χρόνια και η ανάπτυξη αυτή συνδυάζεται με την ανάγκη για συσκευές που λειτουργούν σε χαμηλή τάση και με χαμηλή κατανάλωση ενέργειας. Σε ότι αφορά την εμπορική τιμή, μια μικρή αύξηση της διάρκειας ζωής της μπαταρίας μπορεί να αντανακλάται σε μια αύξηση κατά μία τάξη μεγέθους της τιμής. Όλες οι εφαρμογές, από τις συσκευές πολυμέσων (όπως κινητά τηλέφωνα, φορητούς υπολογιστές, notebook κ.λπ.) έως και τις βιοϊατρικές συσκευές έχουν δει μια ταχεία πρόοδο. Όλες αυτές οι συσκευές, για να συνδέονται με ασύρματα δίκτυα, χρειάζονται πομποδέκτη χαμηλής τάσης και χαμηλής κατανάλωσης ισχύος. Η παρούσα διδακτορική διατριβή επικεντρώνεται στην ανάπτυξη νέων τεχνικών σχεδιασμού για ολοκληρωμένα κυκλώματα με έμφαση στα αναλογικά κυκλώματα, χαμηλής τάσης και χαμηλής ισχύος. Η συντριπτική πλειοψηφία των δομικών βαθμίδων αναλογικών κυκλωμάτων υψηλών επιδόσεων πραγματοποιείται σε τεχνολογία μετάλλου οξειδίου ημιαγωγού τρανζίστορ φαινομένου πεδίου (MOSFET) και εκμεταλλεύεται τα τρανζίστορ που παραδοσιακά λειτουργούν σε κόρο. Ωστόσο, υπάρχει η περιοχή ασθενούς αναστροφής, η οποία αφέθηκε ανεκμετάλλευτη μέχρι πρόσφατα, όπου η συμπεριφορά των τρανζίστορ MOS είναι παρόμοια με αυτήν των διπολικών τρανζίστορ. Αυτή η περιοχή θα μπορούσε να αξιοποιηθεί για τις συσκευές που απαιτούν λειτουργία με χαμηλή τάση τροφοδοσίας. Αντί να λειτουργούν στην περιοχή κόρου, τα τρανζίστορ MOS που χρησιμοποιούνται σε αυτό το σχεδιασμό, λειτουργούν σε ασθενή αναστροφή. Τα τρανζίστορ MOS στα προτεινόμενα κυκλώματα είναι ελεγχόμενα από το υπόστρωμα (bulk-driven). Στο συμβατικό τρόπο οδήγησης το υπόστρωμα παραμένει αχρησιμοποίητο και συνδέεται με την χαμηλότερη τάση τροφοδοσίας ή τη γείωση, ενώ η πύλη συνήθως, επιλέγεται για την εισαγωγή σήματος εισόδου και οδηγεί το κύκλωμα. Το υπόστρωμα μπορεί να χρησιμοποιηθεί ως είσοδος για το σήμα, μπορεί να μειώσει την τάση κατωφλίου (threshold voltage) των τρανζίστορ, και τελικά, χαμηλώνει την τάση λειτουργίας του τρανζίστορ. Σε αυτήν την διδακτορική διατριβή χρησιμοποιείται ως διαγωγός (transconductor) ένα τροποποιημένο κύκλωμα Nauta, ο οποίος λειτουργεί σε πολύ χαμηλές τάσεις. Οι ελεγχόμενοι διαγωγοί χρησιμοποιούνται για το σχεδιασμό των προτεινόμενων συντονιζόμενων φίλτρων. Τα κατασκευασμένα φίλτρα μπορούν να συντονιστούν στην περιοχή των λίγων MHz. Τα προτεινόμενα φίλτρα λειτουργούν χρησιμοποιώντας τάση τροφοδοσίας 0.5V και η συχνότητα αποκοπής τους μπορεί εύκολα να προσαρμοστεί. Όλα τα κυκλώματα σχεδιάζονται και εξομοιώνονται χρησιμοποιώντας μία τεχνολογία CMOS triple well 0.13μm. Ο υπό μελέτη τελεστικός ενισχυτής διαγωγιμότητας (Operational Transconductor Amplifier - OTA) έχει τροποποιηθεί περαιτέρω, για να επιτευχθεί καλύτερη απόδοση και να εφαρμοστεί σε ένα μιγαδικό φίλτρο. Η μετατροπή σήματος από τις μεσαίες συχνότητες (IF) στις χαμηλές συχνότητες παρουσιάζεται ένα σημαντικό πρόβλημα όπου μαζί με το επιθυμητό σήμα εμφανίζεται και το σήμα εικόνας στην ίδια συχνότητα. Τα μιγαδικά (complex) φίλτρα μπορούν να αφαιρέσουν εύκολα το σήμα εικόνας, εφαρμόζοντας μια διαδικασία μετατόπισης συχνότητας. Ένα μιγαδικό Leapfrog φίλτρο έχει σχεδιαστεί χρησιμοποιώντας διαφορικούς ενισχυτές διαγωγιμότητας. Το τελικό μιγαδικό φίλτρο δωδέκατης τάξης έχει σχεδιαστεί για να καλύψει τις απαιτήσεις του προτύπου Bluetooth και Zigbee. Το φίλτρο λειτουργεί με τάση τροφοδοσίας 0.5V και έχει πολύ καλά αποτελέσματα στην απόρριψη εικόνας, την ευαισθησία και το θόρυβο. Επίσης, η κεντρική συχνότητα και το εύρος συχνοτήτων είναι ανεξάρτητα ρυθμιζόμενα. Η απόδοση του φίλτρου έχει επαληθευτεί μέσω προσομοίωσης χρησιμοποιώντας μοντέλα τρανζίστορ μιας τεχνολογίας CMOS triple well 0.13μm. Φίλτρα που σχεδιάζονται με την προτεινόμενη μέθοδο μπορούν να εφαρμοστούν σε συσκευές Bluetooth που χρησιμοποιούνται και σε βιοϊατρικές εφαρμογές.

The aim of this thesis is to design a universal analog oscillator using transconductance amplifiers. For studying behaviour of chaotic dynamical systems can be used systems Class C. Suitable way for the purpose modeling dynamic phenomena arising in these systems is an electronic circuit that exhibits the same behavior as modeled system. After familiarization with the basic principles of synthesis of integrators systems, and studying the involvement of frequently used functional blocks were designed the concept of universal chaotic oscillator using transconductance amplifiers. The functionality of this circuit has been verified by PSpice simulation program. A typical feature of chaotic oscillator is extremely sensitivity to initial conditions. Each small change on the initial parameters can lead to major change in the shape of the attractor. The result of this thesis is a functional sample of a universal chaotic oscillator, which was verified by the dynamic behavior of the given differential equations.

A high-precision mixed-signal mismatch measurement technique for metal-oxide metal (MoM) capacitors as well as the design of a 13-GHz 5-bit 360-degree phase shifter are presented. This thesis presents a high-precision, mixed-signal mismatch measurement technique for metal-oxide–metal capacitors. The proposed technique incorporates a switched-capacitor op amp within the measurement circuit to significantly improve the measurement precision while relaxing the resolution requirement on the backend analog-to-digital converter (ADC). The proposed technique is also robust against multiple types of errors. A detailed analysis is presented to quantify the sensitivity improvement of the proposed technique over the conventional one. In addition, this thesis proposes a multiplexing technique to measure a large number of capacitors in a single chip and a new layout to improve matching. A prototype fabricated in 180 nm CMOS technology demonstrates the ability to sense capacitor mismatch standard deviation as low as 0.045% with excellent repeatability, all without the need of a high-resolution ADC. The 13-GHz 5-bit 360-degree phase shifter consists of 2 stages. The first stage utilizes a delay line for 4-bit 180-degree phase shift. A second stage provides 1-bit 180-degree phase shift. The phase shifter includes gain tuning so as to allow a gain variation of less than 1 dB. The design has been fabricated in 180 nm CMOS technology and measurement results show a complete 360◦ phase shift with an average step size of 10.7◦ at 13-GHz. After calibration the phase shifter presented an output gain S21 of 0.5 dB with a gain variation of less than 1 dB across all codes at 13-GHz. The remaining s-parameter testing showed a S22 and S11 below -11 dB and a S12 below -49 dB at 13 GHz.