Le présent article se donne pour objectif d’examiner de façon critique les études précédentes sur le passif en Hawsa et de proposer, dans le cadre de lan théorie de l’énonciation de Antoine Culioli, une nouvelle approche. Le passif en Hawsa morphologiquement très simple offre une diversité complexe sur le plan sémantique. Cette complexité de signification ne peut être démêlée et appréhendée que par une approche transcatégorielle qui associe les différents types de procès, l’aspect et le passif dans leur interrelation nécessaire. Cette démarche a d’abord mis en évidence l’impossibilité de dériver le passif de l’actif. En second lieu, elle a permis de distinguer les types de passifs suivants : passif potentiel qui résulte de la combinaison du passif et de l’inaccompli, le passif résultatif obtenu avec l’accompli et qui se subdivise en passif conatif quand le verbe est discret et en passif qualitatif en haut degré avec les verbes denses. En fin, elle a permis de mieux comprendre le fonctionnement de certains verbes qui semblent avoir un comportement à priori singulier y compris le fonctionnement du passif dit « dégénéré » qui s’explique par le double rôle d’agent et d’agi du sujet grammatical.

In the aspect of electric-ship grounding, the time-domain behavior of the ship hull is needed. The grounding scheme impacts the nature of voltage transients during switching events and faults, identifiability and locatability of ground faults, fault current levels, and power quality. Due to the large size of ships compared with the wavelengths of the desired signals, time-domain measurement or simulation is a time-consuming process. Therefore, it is preferred that the behavior be studied in the frequency-domain. In the frequency-domain one can break down the whole ship hull into small blocks and find the frequency behavior of each block (scattering parameters) in a short time and then connect these blocks and find the whole ship hull scattering parameters. Then these scattering pa- rameters should be transferred to the time-domain. The problem with this process is that the measured frequency-domain data (or the simulated data) is band-limited so, while calculating time-domain solutions, due to missing DC and low frequency content the time-domain response encounters causality, passivity and time-delay problems. Despite availability of several software and simulation packets that convert frequency-domain information to time-domain, all are known to suffer from the above mentioned problems. This dissertation provides a solution for computing the Time-Domain Impulse-Response for a system by using its measured or simulated scattering parameters. In this regard, a novel wavelet computational approach is introduced.

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No description available.

京都大学 / 新制・課程博士 / 博士(工学) / 甲第23887号 / 工博第4974号 / 新制||工||1777(附属図書館) / 京都大学大学院工学研究科航空宇宙工学専攻 / (主査)教授 藤本 健治, 教授 泉田 啓, 教授 大塚 敏之 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

No description available.

<p>This thesis presents an investigation into the structure, composition and performance of naturally formed surface films on AZ alloys as a function of pH and alloyed Al concentration. STEM verified the film structure was bi-layer, consisting of an inner barrier layer, which was visibly deteriorated, and an outer porous layer. EDS SmartMaps™ coupled with the Inca™ software package determined the inner barrier layer was predominantly composed of MgO, whereas the outer layer was primarily Mg(OH)₂. However, both layers appeared to posses mixed oxide/hydroxide components according to ToF-SIMS analysis.</p> <p>Environmental pH had the largest effect on the structure and composition of the surface film. The near-neutral sample showed significant breakdown within the inner layer, which was attributed to natural hydration of MgO to Mg(OH)₂. This favourable hydration reaction is slower in alkaline environments and as such, the stability of the inner barrier layers of the pH 14 samples were noticeably improved. The effect of alloyed Al concentration was less significant however; increased enrichment of Al into the surface film structure appeared to cause a reduction in the thickness of the corrosion film itself.</p> <p>Drastic differences in corrosion performance were observed between the near-neutral and alkaline environments. Significantly better corrosion resistance to anodic dissolution was present in the alkaline environment coupled with a noticeably lower corrosion rate. The absence of breakdown potentials along with the presence of mass transport controlled anodic kinetics signified that the improved stability of the inner barrier layer was responsible for improved corrosion performance. In contrast, severe pitting and a narrow range of anodic stability were present for the near-neutral samples where the inner barrier layer was significantly compromised. This deterioration was deemed responsible for accelerated cathodic kinetics as well as minimal impedance to aggressive Cl^- ions from initiating wide scale electrochemical breakdown of the surface film.</p> / Master of Applied Science (MASc)

付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」 / 京都大学 / 新制・課程博士 / 博士(工学) / 甲第24620号 / 工博第5126号 / 新制||工||1980(附属図書館) / 京都大学大学院工学研究科電気工学専攻 / (主査)教授 土居 伸二, 教授 小嶋 浩嗣, 准教授 薄 良彦, 教授 引原 隆士 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Ce travail met sur un plan de comparaison deux auteurs apparemment écartées l’un de l’autre: C.E.Gadda et M.Merleau-Ponty. La "Meditazione Milanes"e constitue le premier plan d'approche entre eux: écrite dans le cadre de l’éventuel diplôme de Gadda en philosophie, ce texte est aussi point de référence et de départ de son œuvre littéraire, plus connue et importante. Sur les rélations entre philosophie et littérature s'axe la confrontation avec Merleau-Ponty, qui pérçoit l’exigence d’élargir le domaine de la philosophie à l'art, et la littérature notamment. La première partie, «Une phénoménologie», analyse d'abord la problématique posée à la philosophie et à la littérature par la phénoménologie, et se concentre ensuite sur la comparaison entre la conception merleau-pontienne de corps et les propositions corporelles présentées dans l’œuvre de Gadda.La deuxième partie, «Le baroque», scrute de près les structures du baroque (gaddien et merleau-pontien) à travers l’analyse des notions de structure et de monade, puis des problématiques liées à l’expression et au travail de Saussure; ensuite introduit les thèmes de la multiplicité et du devenir à partir de la confrontation des deux auteurs avec le langage cinématographique. Le chapitre final approfondit le thème gaddien du rapport entre totalité et multiplicité par le biais des figures merleau-pontiennes du chiasme et de la chair, et montre tout acte de language comme déformation, c'est-à-dire tant comme création que comme passivité, où le silence est cosubstantiel aux paroles. / This doctoral thesis conducts a comparison between two authors seemingly distant from each other: C. E. Gadda and M. Merleau-Ponty. The Meditazione milanese represents a first step of approximation between them: written by Gadda with a view to his eventual philosophy degree, this text is also the point of departure of his more noted and important literary work. The comparison with Merleau-Ponty is based on the relationship between philosophy and literature, as, like Gadda, Merleau-Ponty maintains that philosophy must abandon its conceptual vocabulary in order to broaden its own horizon towards art and literature in particular. Entitled “A Phenomenology”, the first part of this thesis analyses above all the contribution of phenomenology to philosophy and literature; subsequently, it concentrates on the analogies between Merleau-Ponty’s notion of the body and the theme of corporeality as it is present in Gadda’s writings. The second part, “The Baroque”, scrutinises the baroque structures evident in the works of Gadda and Merleau-Ponty by examining the ideas of the system and the monad; it then broadens the topic of language on the grounds of F. Saussure’s Cours de linguistique; finally, departing from an engagement with cinematic language, it introduces the themes of multiplicity and becoming which the two authors have in common. The final chapter deepens Gadda’s concern with the relationship between totality and multiplicity through Merleau-Ponty’s figures of the chiasm and the flesh, describing every linguistic and expressive act as a deformation, i.e. as a movement which is both creation and passivity, where silence is the co-substance of words. / Questo lavoro mette a confronto due autori apparentemente distanti tra loro: C.E Gadda e M. Merleau-Ponty. La Meditazione milanese costituisce un primo livello di accostamento tra loro: questo testo, scritto da Gadda in previsione dell'eventuale laurea in filosofia, è anche il punto di partenza della sua opera letteraria, più nota e importante.Sulla relazione tra filosofia e letteratura si struttura il confronto con Merleau-Ponty, il quale, al pari di Gadda, ritiene che la filosofia debba rinunciare ad un vocabolario concettuale, per allargare il proprio orizzonte all'arte, e alla letteratura in particolare.La prima parte di questo lavoro, “Una fenomenologia”, analizza anzitutto il contributo della fenomenologia alla filosofia e letteratura; si concentra in seguito sulle analogie tra la nozione merleau-pontiana di corpo e le tematiche della corporeità presenti negli scritti di Gadda.La seconda parte, “il barocco”, scruta le strutture del barocco (gaddiano e merleau-pontiano) attraverso l'analisi delle nozioni di sistema e di monade; approfondisce poi il tema del linguaggio sulla base del Cours de linguistique di Saussure; introduce infine i temi della molteplicità e del divenire a partire da un confronto con il linguaggio cinematografico, comune ai due autori. Il capitolo conclusivo, approfondisce il problema gaddiano del rapporto tra la totalità e la molteplicità attraverso le figure merleau-pontiane del chiasma e della carne, e mostra ogni atto linguistico ed espressivo come una deformazione, ovvero come un movimento che è insieme creazione e passività, dove il silenzio è consustanziale alle parole.

by Choy Wing Hong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 95-102). / Text in English; abstract also in Chinese. / by Choy Wing Hong. / ABSTRACT --- p.vi / ACKNOWLEDGEMENTS --- p.x / LIST OF FIGURES --- p.xi / LIST OF TABLES --- p.xiii / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Surface passivation techniques --- p.2 / Chapter 1.2.1 --- Sulfide solution passivation --- p.2 / Chapter 1.2.2 --- Gas-phase sulfide passivation --- p.3 / Chapter 1.2.3 --- Ultra-violet and ozone exposure --- p.4 / Chapter 1.3 --- Surface structure of sulfide-passivated surface --- p.5 / Chapter 1.4 --- Surface structure of ultra-violet/ozone oxidation --- p.8 / Chapter 1.5 --- Objectives of present study --- p.10 / Chapter Chapter 2 --- Instrumentation --- p.12 / Chapter 2.1 --- Introduction --- p.12 / Chapter 2.2 --- Atomic force microscopy (AFM) --- p.12 / Chapter 2.2.1 --- The development of AFM --- p.12 / Chapter 2.2.2 --- Basic principles of AFM --- p.12 / Chapter 2.2.3 --- Forces and their relevance to atomic force microscopy --- p.13 / Chapter 2.2.3.1 --- Van Der Waals forces --- p.15 / Chapter 2.2.3.2 --- Repulsive forces --- p.15 / Chapter 2.2.3.3 --- Capillary forces --- p.15 / Chapter 2.2.4 --- Displacement sensor of AFM --- p.15 / Chapter 2.2.4.1 --- Electron tunneling --- p.16 / Chapter 2.2.4.2 --- Optical interference --- p.16 / Chapter 2.2.4.3 --- Laser beam deflection --- p.16 / Chapter 2.2.5 --- Instrument specification --- p.17 / Chapter 2.2.5.1 --- Contact mode AFM --- p.17 / Chapter 2.3 --- X-ray photoelectron spectroscopy --- p.19 / Chapter 2.3.1 --- The development of XPS --- p.19 / Chapter 2.3.2 --- Basic principles of XPS --- p.19 / Chapter 2.3.3 --- XPS experiments --- p.23 / Chapter 2.3.4 --- Quantitative analysis --- p.26 / Chapter 2.3.4.1 --- Atomic concentration of a homogenous materials --- p.26 / Chapter 2.3.4.2 --- Layer structure --- p.27 / Chapter 2.4 --- Rutherford backscattering spectrometry (RBS) --- p.29 / Chapter 2.4.1 --- Basic principles --- p.29 / Chapter 2.4.2 --- Kinematics --- p.29 / Chapter 2.4.3 --- Channeling --- p.31 / Chapter Chapter 3 --- Surface treatments --- p.32 / Chapter 3.1 --- Semiconductor wafer --- p.32 / Chapter 3.2 --- Cleaning procedures --- p.32 / Chapter 3.3 --- Polysulfide passivation --- p.34 / Chapter 3.4 --- UV/Ozone oxidation --- p.39 / Chapter Chapter 4 --- Surface roughness and oxide contents of sulfide passivation --- p.41 / Chapter 4.1 --- Introduction --- p.41 / Chapter 4.2 --- Experimental methodology --- p.42 / Chapter 4.3 --- Etching --- p.44 / Chapter 4.3.1 --- Etching effect of polysulfide solution --- p.45 / Chapter 4.3.2 --- Possible consequences of the etching effect --- p.45 / Chapter 4.4 --- Oxide contents --- p.47 / Chapter 4.4.1 --- Oxide gained during polysulfide solution treatment --- p.47 / Chapter 4.4.2 --- Oxide gained after polysulfide passivation --- p.47 / Chapter 4.5 --- Surface roughness --- p.49 / Chapter 4.5.1 --- Surface roughness after different passivation methods --- p.49 / Chapter 4.5.2 --- The sticking probability after different passivations --- p.51 / Chapter 4.6 --- The spiral ladder of solution-phase passivation --- p.55 / Chapter 4.7 --- Conclusions --- p.58 / Chapter Chapter 5 --- Sulfide on Ge/GaAs heterojunction --- p.59 / Chapter 5.1 --- Introduction --- p.59 / Chapter 5.1.1 --- Band structure of Ge/GaAs heteroj unction --- p.59 / Chapter 5.1.2 --- Lattice match of Ge/GaAs heteroj unction --- p.60 / Chapter 5.1.3 --- The growth of Ge on GaAs using molecular beam epitaxy --- p.62 / Chapter 5.2 --- The growth of Ge on GaAs using thermal pulse annealing --- p.63 / Chapter 5.3 --- Sulfide as an atomic interdiffusion barrier --- p.65 / Chapter 5.3.1 --- Experimental methodology --- p.65 / Chapter 5.3.2 --- Crystallinity of Ge --- p.67 / Chapter 5.3.3 --- Results and discussions --- p.67 / Chapter 5.3.3.1 --- RBS and XPS results --- p.67 / Chapter 5.3.3.2 --- AFM and I-V results --- p.71 / Chapter 5.4 --- Conclusions --- p.71 / Chapter Chapter 6 --- UV/03 on Ge/GaAs heterojunction --- p.72 / Chapter 6.1 --- Introduction of UV/o3 oxidation --- p.72 / Chapter 6.2 --- UV/o3 oxidation on GaAs --- p.74 / Chapter 6.3 --- Ge on UV/o3 treated GaAs --- p.76 / Chapter 6.3.1 --- Experimental methodology --- p.76 / Chapter 6.3.2 --- Crystallinity of Ge --- p.77 / Chapter 6.3.3 --- AFM results --- p.77 / Chapter 6.3.4 --- RBS results --- p.80 / Chapter 6.4 --- Diodes --- p.82 / Chapter 6.4.1 --- Fabrication of diode --- p.82 / Chapter 6.4.2 --- Diode characteristics --- p.84 / Chapter 6.4.3 --- I-V characteristics --- p.90 / Chapter 6.5 --- Conclusions --- p.90 / Chapter Chapter 7 --- Conclusion and future work --- p.93 / Chapter 7.1 --- Conclusions --- p.93 / Chapter 7.2 --- Future works --- p.94 / Reference --- p.95