This thesis reports the inspection and manipulation of thin ferroelectric films of lead titanate (PbTiO3 : PTO), lead zirconium titanate (Pb(Zr0.25Ti0.75)O3 : PZT), and barium titanate (BaTiO3 : BTO) by means of scanning force microscopy - specifically Piezoresponse and Kelvin-Probe. The film thickness of the investigated samples ranged between 50nm and 800nm. This experimental work focussed on the following issues: native domain structures, creation of domains by short voltage pulses and area-switching with the force microscope, local qualitative and quantitative measurements of the ferroelectric hysteresis loops, and investigations at the interface between film and platinum-electrode in the PZT/Pt-System. Lamellar domain structures were visualized with high lateral resolution of 5nm on the surface of the PTO-samples, whereas the PZT- and BTO-samples showed prepolarisation and no domains. In the switching experiments a pronounced thickness dependence was found and partly a good agreement to macroscopic measurements. For BTO-films of 50nm and 125nm thickness no stable switching of polarisation could be observed. Using appropriate preparation methods it was possible to provide evidence of a 200nm thick interface layer with reduced polarisation above the electrode in the PZT/Pt-system. / Gegenstand dieser Arbeit ist die Untersuchung dünner ferroelektrischer Schichten von Bleititanat (PbTiO3 : PTO), Bleizirkoniumtitanat (Pb(Zr0.25Ti0.75)O3 : PZT) und Bariumtitanat (BaTiO3 : BTO) und deren Manipulation auf der sub-µm-Skalamittels Rasterkraftmikroskopie. Die Dicke der Schichten lag im Bereich von 50nm bis 800nm. Zum Einsatz kamen die Meßmodi Piezoresponse und Kelvin-Sonde. Die experimentelle Arbeit erstreckte sich über die Abbildung von Domänenstrukturen, die Erzeugung von Domänen durch kurze Spannungspulse und flächiges Umschalten mit dem Kraftmikroskop, lokale qualitative und quantitative Messungen der ferroelektrischen Hysterese, sowie Untersuchungen an der Grenzschicht zwischen Film und Platin-Elektrode am PZT/Pt-System. Lamellenartige Domänenstrukturen konnten mit hoher lateraler Auflösung von 5nm auf der Oberfläche von PTO abgebildet werden. Die PZT- und BTO-Proben waren vorpolarisiert und es ließen sich keine Domänen nachweisen. Bei den Schaltversuchen wurde eine ausgeprägte Schichtdickenabhängigkeit der Koerzitivfeldstärken und teilweise gute Übereinstimmung mit makroskopischen Messungen gefunden. Für dünne BTO-Schichten von 50nm und 125nm Dicke konnte kein stabiles Umschalten der Polarisation gezeigt werden. Mittels geeigneter Präparation der PZT/Pt-Grenzschicht konnte durch direkte Messung eine Schicht von 200nm Dicke mit verminderter Polarisation oberhalb der Elektrode nachgewiesen werden.

Ferroelectric (FE) HfO₂-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–voltage (P–V) loops along the voltage axis due to the development of an internal electric bias, which can lead to the failure of the writing and retention functions. Here, to gain insight into the mechanism of the imprint effect in La-doped HfO₂ (La:HfO₂) capacitors, we combine the pulse switching technique with high-resolution domain imaging by means of piezoresponse force microscopy. This approach allows us to establish a correlation between the macroscopic switching characteristics and domain time–voltage-dependent behavior. It has been shown that the La:HfO₂ capacitors exhibit a much more pronounced imprint compared to Pb(Zr,Ti)O₃-based FE capacitors. Also, in addition to conventional imprint, which evolves with time in the poled capacitors, an easily changeable imprint, termed as “fluid imprint”, with a strong dependence on the switching prehistory and measurement conditions, has been observed. Visualization of the domain structure reveals a specific signature of fluid imprint—continuous switching of polarization in the same direction as the previously applied field that continues a long time after the field was turned off. This effect, termed as “inertial switching”, is attributed to charge injection and subsequent trapping at defect sites at the film–electrode interface.

This work examines extended, point, and surface defects in GaN by means of electric force microscopy, photoluminescence and deep-level transient spectroscopy. Modeling of the surface band bending, its origin, and the effects of fabrication processing steps are discussed in the first part of the dissertation. Experimental results indicate that spontaneous polarization does not play a predominant role in GaN band bending. An increase of surface band bending due to annealing and etching was observed, while passivation did not produce changes. However, passivation did reduce reverse-bias leakage current by one to two orders of magnitude in GaN Schottky diodes. The optical properties of GaN were found to be sensitive to fabrication processing steps, most likely due to changes in the total density of surface states.The second part of this dissertation concerns the reduction of extended defects and associated deep levels in layers of GaN grown on different templates. Templates employing a low temperature GaN nucleation layer, epitaxial lateral overgrowth, and SiNx nanonetwork are compared in terms of deep level concentrations in the resulting GaN films. The concentrations of two types of traps, A (Ec-ET ~ 0.54-0.58 eV) and B (Ec-ET ~ 0.20-0.24 eV), were the highest for the sample with a low temperature nucleation layer and lowest for a sample with a 6 min SiNx deposition time. We surmise that the defects responsible for the dominant trap A are located along dislocation lines and form clusters.In the last part we investigate the piezoelectric and ferroelectric properties of PZT in Pb(Zr, Ti)O3(PZT)/GaN structures, and the effects of interface states. Sol-gel derived thin PZT films on GaN and Pt/Ti/SiO2/Si surfaces were studied by piezoresponse force microscopy (PFM), where quantitative characterization of piezoelectric properties of PZT films was performed. Superior piezoelectric properties of PZT/GaN/sapphire structures as compared to PZT/ Pt/Ti/SiO2/Si structures were observed and explained by a different preferred orientation of PZT. Despite the possible existence of a strong depolarization field at the PZT/GaN interface, we confirm with PFM the presence of a remanent polarization in PZT/GaN/sapphire structures.

The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titaniumwas annealed in the presence of NaCl at 760 °C or 820 °C. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was respectively BaTi2O5/BaTi5O11 and Na2Ti6O13 for the two different systems, in contradiction to the previous studies. It was shown that NaCl reacted with BaO(PbO) resulting in loss of volatile BaCl2 (PbCl2 ) and formation and preferential growth of titanium oxide-rich nanorods instead of the target phase BaTiO3 (or PbTiO3 ). The molten salt synthesis route may therefore not necessarily yield nanorods of the target ternary oxide as reported previously. In addition, the importance of NaCl(g) for the growth of nanorods below the melting point of NaCl was demonstrated in a special experimental setup, where NaCl and the precursors were physically separated. In Paper II and III, a hydrothermal synthesis method to grow arrays and hierarchical nanostructures of PbTiO3 nanorods and platelets on substrates is presented. Hydrothermal treatment of an amorphous PbTiO3 precursor in the presence of a surfactant and PbTiO3 or SrTiO3 substrates resulted in the growth of PbTiO3 nanorods and platelets aligned in the crystallographic <100> orientations of the SrTiO3 substrates. PbTiO3 nanorods oriented perpendicular to the substrate surface could also be grown directly on the substrate by a modified synthesis method. The hydrothermal method described in Paper II and III was developed on the basis of the method described in Appendices I and II. In Paper IV, a template-assisted method to make PbTiO3 nanotubes is presented. An equimolar Pb-Ti sol was dropped onto porous alumina membranes and penetrated into the channels of the template. Single-phase PbTiO3 perovskite nanotubes were obtained by annealing at 700 °C for 6 h. The nanotubes haddiameters of 200 - 400 nm with a wall thickness of approximately 20 nm. Excess PbO or annealing in a Pb-containing atmosphere was not necessary in order to achieve single phase PbTiO3 nanotubes. The influence of the heating procedure and the sol concentration is discussed. In Paper V, a piezoresponse force microscopy study of single PbTiO3 nanorods is presented. The piezoelectric properties were studied in both vertical and lateral mode. Piezoelectric activity and polarization switching was observed in the vertical mode, demonstrating the ferroelectric nature of the nanorods. The nanorods decomposed after repeated cycling of the dc bias at one spot on the nanorod, which resulted in parts of the nanorod disappearing and/or accumulation of particles on the surface of the nanorod. In Paper VI, a method to contact single nanorods by electron beam induced deposition of platinum is presented. An organometallic compound, (trimethyl)-methylcyclopentadienylplatinum(IV), was used as precursor. A home-made apparatus was constructed for the purpose and was mounted onto a scanning electron microscope. Calculations based on apparatus geometry and molecular flow were used to estimate the deposition time and the height of the deposits. The location and height of the deposits were controlled so that single nanorods could be successfully contacted at the ends of the nanorods. Fabrication of a sample device for piezoresponse force microscopy studies of single nanorods using an axial dc bias setup is described in Appendix IV. A proposed experimental setup for such studies is also presented.

No description available.

Les matériaux ferroélectriques sont caractérisés par l'existence d'une polarisation électrique spontanée, dont l'orientation peut être inversée par l'application d'un champ électrique adéquat. Permettant de coder l'information sous la forme d'un domaine ferroélectrique, i.e. une région du matériau avec une certaine orientation de la polarisation, les ferroélectriques ouvrent la voie au stockage de masse de très haute densité (>10 Tbit/in ²). Dans ce contexte, nous avons employé la Piezoresponse Force Microscopy (PFM), un mode particulier de Microscope à Force Atomique (AFM), permettant la manipulation et la détection des domaines ferroélectriques à l'échelle du nanomètre. Avec pour objectif d'étudier les mécanismes de formation des domaines par l'intermédiaire d'une pointe AFM, nos travaux ont mis en valeur la cinétique de croissance des domaines dans des films minces monocristallins de LiTaO3, avec une approche complémentaire de celle thermodynamique, dépendante du champ électrique et soulignant le rôle de l'humidité dans une possible conduction de surface. En parallèle, les films de LiTaO3 ont permis d'appréhender davantage la nature électro-mécanique de la réponse PFM, pour notamment relier l'amplitude du signal mesuré à la géométrie du domaine sous pointe. PFM et domaines ferroélectriques se sont en effet révélés tour à tour, objet d'étude et outil de caractérisation.

Made available in DSpace on 2016-06-02T20:16:51Z (GMT). No. of bitstreams: 1 5333.pdf: 5685389 bytes, checksum: 082b6b7ff9988cce9196ad87a26521b6 (MD5) Previous issue date: 2013-02-27 / Universidade Federal de Sao Carlos / In this work, the domain structure of a transparent ferroelectric ceramic of (Pb0,79La0,21)TiO3 (PLT 21) was investigated in detail by piezoresponse force microscopu (PFM) and a protocol of measurements and analysis of the piezoresponse for the tridimensional reconstruction of the polarization in ferroelectric domains, including from mono and polycrystalline materials was developed. With this protocol, properties of domains and domain walls of the PLT 21 ceramic and of a PbTiO3 (PT) thin film were investigated. Three types of domains were recognized in the PLT 21 ceramic: domains separated by 180° walls, and domains separated by 90° walls in two scales, one in wich the domains have dimensions of about 1 μm and another with dimensions lower than 100 nm. Classical domain structures of lamellae and herringbones, and even more exotic structures as quadrants could be observed in PLT 21. This last one might suggest the existence of flux closure states of polarization in ferroelectric ceramics. In our knowledge this is the first time that quadrant structures are observed in ceramics. We could also observe in PLT 21 ceramic, ferroelectric domains that run through de grain boundary. Analysis of the reorientation of polarization by applying a localized BIAS field, revealed a strong electromechanical coupling in the sample, with the appearance of new 90° domain structure as a way to compensate local deformations generated by the poling process. The domain structure of the PT thin film revealed grains with monodomain structure and grains with polydomain structure, being the latter preferentially formed by 90° walls. The study of the reorientation of domains in the thin films of PT, showed the formation of a monodomain structure in the majority of the grains after the poling process, what significantly differs from the results of the PLT 21 ceramics. Lastly, thin films of Pb(Fe0,5Nb0,5)O3 (PFN) with good structural, microstructural and electrical properties were produced by radio frequency sputtering (R.F. Sputtering) with different thickness (50 nm 950 nm). The values of remnant polarization and coercive field of the hysteresis loop were 7 μC/cm2 and 70 kV/cm, respectively, which are bigger than many results found in the literature. Ferroelectric local properties were investigated in monolithic thin films (i.e., films that have a single grain in the thickness) of PFN and compared with the properties obtained in polycrystalline thin films of PT. / Neste trabalho, a estrutura de domínios de uma cerâmica transparente de (Pb0,79La0,21)TiO3 (PLT 21) foi detalhadamente investigada por microscopia de piezoresposta e um protocolo de medida e análise da piezoresposta para a reconstrução tridimensional da polarização de domínios em ferroelétricos, incluindo materiais mono e policristalinos, foi desenvolvido. Com este protocolo, as propriedades de domínios e paredes de domínios da cerâmica de PLT 21 e de um filme fino de PbTiO3 (PT) foram investigadas. Três tipos de domínios puderam ser reconhecidos na cerâmica de PLT 21: domínios separados por paredes 180° e domínios separados por paredes de 90° em duas escalas, uma em que os domínios têm dimensão de aproximadamente 1 μm e outra com dimensão menor que 100 nm. Estruturas de domínios clássicas como as lamelas e espinhas de peixes, até estruturas mais exóticas como a de quadrantes, puderam ser observadas no PLT 21. Essa última estrutura, pode sugerir a existência de estados de polarização de flux closure em cerâmicas ferroelétricas. Em nosso conhecimento, esta é a primeira vez que estruturas de quadrantes são observadas em cerâmicas. Foi possível observar na cerâmica de PLT 21, domínios ferroelétricos que transpõe a barreira do contorno de grão. A análise da reorientação da polarização com a aplicação de campo localizado revelou um forte acoplamento eletromecânico na amostra, com o aparecimento de novas estruturas de domínios de 90° como forma de compensar as deformações locais geradas pelo processo de polarização. A estrutura de domínios de filme fino de PT apresentou grãos com estrutura de monodomínio e grãos com estrutura de polidomínios, sendo o último preferencialmente formado por paredes de 90°. Os estudos de reorientação dos domínios nos filmes de PT mostraram a formação de uma estrutura de monodomínios na maioria dos grãos após o processo de polarização, o que difere significativamente dos resultados obtidos cerâmicas de PLT 21. Por fim, filmes finos de Pb(Fe0,5Nb0,5)O3 (PFN) com boas propriedades estruturais e microestruturais e elétricas foram produzidos por sputtering em radiofrequência (R.F. Sputtering) com diferentes espessuras (50 nm até 950 nm). Os valores obtidos por histerese ferroelétrica foram de 7 μC/cm2 de polarização remanescente e 70 kV/cm de campo coercitivo, maiores do que a maioria dos resultados encontrados na literatura. Propriedades ferroelétricas locais foram investigadas nos filmes finos monolíticos (i.e., filmes formados por um único grão na espessura) de PFN e comparadas com as propriedades obtidas em filmes finos policristalinos de PT.

Magnetoelectricity (ME) is a physical property that results from an exchange between polar (electric dipole) and spin (magnetic dipole) subsystem: i.e., a change in polarization (P) with application of magnetic field (H), or a change in magnetization (M) with applied electric field (E). Magnetoelectricity can be found both in single phase and composite materials. Compared with single phase multiferroic materials, composite multiferroics have higher ME effects. Through a strictive interaction between the piezoelectricity of the ferroelectric phase and the magnetostriction of the ferromagnetic phase, said multiferroic composites are capable of producing relatively large ME coefficients. This Dissertation focused on the deposition and characterization of two-phase composite magnetoelectric thin films. First, single phase ferroelectric thin films were studied to improve the multiferroic properties of the composite thin films. Then structural, ferroelectric, ferromagnetic, and magnetoelectric properties of composite thin films were researched. Finally, regular nano-array composite films were deposited and characterized. First, for single phase ferroelectric thin films, the phase stability was controlled by epitaxial engineering. Because ferroelectric properties are strongly related to their crystal structure, it is necessary to study the crystal structures in single phase ferroelectric thin films. Through constraint of the substrates, the phase stability of the ferroelectric thin films were able to be altered. Epitaxial thin-layers of Pb(Fe1/2Nb1/2)O3 (or PFN) grown on (001), (110), and (111) SrTiO3 substrates are tetragonal, orthorhombic, and rhombohedral respectively. The larger constraint stress induces higher piezoelectric constants in tetragonal PFN thin film. Epitaxial thin-layers of Pb(Zr0.52Ti0.48)O3 (or PZT) grown on (001), (110), and (111) SrTiO3 substrates are tetragonal, monoclinic C, and rhombohedral respectively. Enhanced ferroelectric properties were found in the low symmetry monoclinic phase. A triclinic phase in BFO was observed when it was deposited on tilted (001) STO substrates by selecting low symmetry (or interim) orientations of single crystal substrates. Then, in two phase composite magnetoelectric thin films, the morphology stability was controlled by epitaxial engineering. Because multiferroic properties are strongly related to the nano-structures of the composite thin films, it is necessary to research the nano-structures in composite thin films. Nano-belt structures were observed in both BaTiO3-CoFe2O4 and BiFeO3-CoFe2O4 systems: by changing the orientation of substrates or annealing condition, the nano-pillar structure could be changed into nano-belts structure. By doing so, the anisotropy of ferromagnetic properties changes accordingly. The multi-ferroic properties and magnetoelectric properties or (001), (110) and (111) self-assembled BiFeO3-CoFe2O4 nano-composite thin film were also measured. Finally, the regular CoFe2O4-BiFeO3 nano-array composite was deposited by pulsed laser deposition patterned using a focused ion beam. Top and cross-section views of the composite thin film showed an ordered CoFe2O4 nano-array embedded in a BiFeO3 matrix. Multiferroic and magnetoelectric properties were measured by piezoresponse force microscopy and magnetic force microscopy. Results show (i) switching of the magnetization in ferromagnetic CoFe2O4 and of the polarization in ferroelectric BiFeO3 phases under external magnetic and electric field respectively, and (ii) changes of the magnetization of CoFe2O4 by applying an electric field to the BiFeO3 phase. / Ph. D.

Les matériaux ferroélectriques sont caractérisés par l'existence d'une polarisation électrique spontanée, dont l'orientation peut être inversée par l'application d'un champ électrique adéquat. Permettant de coder l'information sous la forme d'un domaine ferroélectrique, i.e. une région du matériau avec une certaine orientation de la polarisation, les ferroélectriques ouvrent la voie au stockage de masse de très haute densité (>10 Tbit/in ²). Dans ce contexte, nous avons employé la Piezoresponse Force Microscopy (PFM), un mode particulier de Microscope à Force Atomique (AFM), permettant la manipulation et la détection des domaines ferroélectriques à l'échelle du nanomètre. Avec pour objectif d'étudier les mécanismes de formation des domaines par l'intermédiaire d'une pointe AFM, nos travaux ont mis en valeur la cinétique de croissance des domaines dans des films minces monocristallins de LiTaO3, avec une approche complémentaire de celle thermodynamique, dépendante du champ électrique et soulignant le rôle de l'humidité dans une possible conduction de surface. En parallèle, les films de LiTaO3 ont permis d'appréhender davantage la nature électro-mécanique de la réponse PFM, pour notamment relier l'amplitude du signal mesuré à la géométrie du domaine sous pointe. PFM et domaines ferroélectriques se sont en effet révélés tour à tour, objet d'étude et outil de caractérisation. / Ferroelectric materials are characterized by their spontaneous polarization, whose direction can be reversed by the application of a suitable electric field. Using domains, i.e. regions of uniform polarization orientation, as information bits, ferroelectrics opens the pathway towards ultrahigh storage densities (>10 Tbit/in²). In this respect, Piezoresponse Force Microscopy (PFM), a technique derived from Atomic Force Microscopy (AFM), was used to manipulate and detect ferroelectric domains on the nanometer scale. Our study was focused on the domains formation mechanism in the local electric field of a nanosized tip. Within an approach complementary to the thermodynamic one, we underlined the kinetics of domains growth in single-crystal LiTaO3 thin films, and the role of humidity in a possible surface conduction. In parallel, the LiTaO3 thin films were used to better understand the PFM response, in particular the relation between the measured signal and the geometry of the domain below the tip. This way, PFM and ferroelectrics domains alternately appeared as object of study and characterization tool.

Die Ferroelektrische Lithografie ist ein im letzten Jahrzehnt entwickeltes Verfahren zur gezielten Steuerung des Aufbaus von Nanostrukturen auf ferroelektrischen Oberflächen. Hierbei wird ausgenutzt, dass die unterschiedlich orientierte Spontanpolarisation des Materials in den einzelnen Domänen zu einer charakteristischen Variation der Oberflächenchemie führt. Die vorliegende Dissertation behandelt die Umsetzung dieses Ansatzes zur gezielten und steuerbaren Deposition von Nanostrukturen aus Edelmetallen oder organischen Molekülen. Diese Deposition erfolgte mittels einer nasschemischen Prozessierung unter UV-Beleuchtung auf magnesiumdotierten, einkristallinen Lithiumniobat-Substraten. Als typisches Ergebnis zeigte sich sowohl für in Wasser gelöste Silber-, Gold- und Platinsalze als auch für wässrige Lösungen des organischen Fluoreszenzfarbstoffs Rhodamin 6G eine bevorzugte Abscheidung des Materials an den 180°-Domänenwänden auf der Substratoberfläche. Dabei beginnt die Abscheidung in Form einzelner Nanopartikel innerhalb eines 150−500 nm breiten Streifens parallel zur Domänenwand. Bei fortgesetzter Beleuchtung erfolgt ein weiteres Wachstum der Kristallite bis zur ihrer gegenseitigen Berührung. Damit ermöglicht dieser Abscheideprozess den Aufbau organischer oder metallisch polykristalliner Nanodrähte mit Abmessungen um 100 nm in Breite und Höhe. Die Länge ist lediglich durch die Probenabmessungen begrenzt. Die so erzeugten Strukturen wurden im Rahmen der experimentellen Arbeiten topografisch, elektrisch und optisch charakterisiert. Am Beispiel einzeln kontaktierter Platindrähte konnte dabei deren annähernd ohmsches Leitfähigkeitsverhalten nachgewiesen werden. Zudem reagiert der Widerstand eines solchen Platin-Nanodrahtes sehr sensitiv auf Änderungen des umgebenden Gasmediums, was die Eignung solcher Strukturen für die Integration in künftige Sensorbauelemente unterstreicht. Weitergehende Untersuchungen beschäftigten sich mit der Klärung der Ursachen dieser sogenannten Domänenwanddekoration. Hierzu wurde die Lage der abgeschiedenen Strukturen mit dem zu Grunde liegenden Domänenmuster verglichen. Bis auf wenige Ausnahmen wurde dabei eine auf die Domänengrenze zentrierte, symmetrische Bedeckung nachgewiesen. Als Erklärungsansatz wird die Trennung der photoinduzierten Elektron-Loch-Paare durch das elektrostatische Feld der Polarisations- und Abschirmladungen diskutiert. Diese führt zur Ladungsträgerakkumulation und erhöhten chemischen Reaktivität an den Domänengrenzen. / Ferroelectric lithography is a method for a controlled assembly of nanostructures on ferroelectric surfaces, which has has been established throughout the last decade. It exploits the characteristic variations in surface chemistry arising from the different orientations of the spontaneous polarisation within the separate domains. The scope of this thesis is the application of that approach for the directed and controlled deposition of nanostructures consisting of noble metals or organic molecules. For this deposition, a wet chemical processing under UV illumination was carried out on magnesium doped lithium niobate single crystals. As a typical result, the decoration of 180° domain walls was observed for aqueous solutions of silver, gold and platinum salts as well as for the dissolved organic fluorescent dye Rhodamine 6G. The deposition starts within a stripe of 150−500 nm in width parallel to the domain wall. Under continuing illumination, the crystallites grow further until they finally touch each other. Using this technique, organic or metallic polycrystalline nanowires with dimensions in the range of 100nm in width and height can be assembled. Their length is only limited by the sample size. These nanostructures were characterised in respect of their topographical, electrical and optical properties. In the case of contacted single platinum wires an electrical conduction was measured, which showed approximately ohmic behaviour. It was also shown that the resistance of such a platinum nanowire is very sensitive to changes in the surrounding gas medium. This emphasises the suitability of such structures for integration in future sensor devices. Further experiments were carried out to investigate the physical background of the observed domain wall decoration. For this, the positions of the deposited structures were compared with the underlying domain structure. Apart from few exceptions, a symmetric deposition centered at the domain wall was observed. As a starting point for explanation, the separation of electron-hole-pairs by the electrostatic field from polarisation and screening charges is discussed. This process leads to charge carrier accumulation at the domain boundaries, thus enhancing the local chemical reactivity.