Fabrication of artificially structured superlattices, when controlled on a nanoscale level, can exhibit enhanced dielectric properties over a wide temperature range. Possible fabrication of new functional devices based on the parametric values of dielectric constants of these heterostructures was the major motivation behind the work. Chapter 1 gives a brief overview of ferroelectrics; their defining features and their commercial importance to electronic industry. An introduction to ferroelectric superlattices, their technological application and fundamental physics that influence the behavior of superlattices are provided. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 involves fabrication of two-component ferroelectric superlattices consisting of Barium Titanate (BTO), and Strontium Titanate (STO) with nanoscale control of superlattice periodicities by high-pressure multi target pulsed laser deposition on Pt (111)/Ti/SiO2/Si (100) substrate. Superlattices with varying periodicities were fabricated and their compositional variation across the thin film and the interface width were studied using Secondary Ion Mass Spectrometry (SIMS). Fabrications of superlattice structure were supported by observation of satellite peaks in XRD corresponding to the coherent heterostructures. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. Chapter 4 deals with ferroelectric studies of BTO/STO superlattices. The size dependent polarization behaviors of the superlattices are shown. The experimental realization of the dimensional range in which, the long-range coupling interaction dominates the overall polarization behavior of the system was studied. The dependence of average spontaneous polarization on the individual layer thickness, temperature and the dimensional range of interaction are discussed. The enhanced non-linear behaviors of the films were measured in terms of tunability. The dielectric phase transition behavior of superlattice structures of different periodicities was studied. Chapter 5 focuses on fabrication of three-component ferroelectric superlattices consisting of Barium Titanate (BTO), Calcium Titanate (CTO) and Strontium Titanate (STO). The fabrications of superlattice structures were confirmed by the presence of satellite reflections in XRD analysis and a periodic concentration of Sr, Ba and Ca throughout the film in Depth profile of SIMS analysis. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. The dielectric characteristic and polarization properties of the system are discussed. Large variations of lattice distortion in the consisting layers were achieved by varying the stacking sequence and superlattice periodicity. The influence of interfacial strain on enhancement of ferroelectric polarization was studied. The size dependence and the role of interfaces in the observed enhancements of the dielectric behaviors were highlighted. The tunability of about 55% was achieved in these systems and was higher than any of the single polycrystalline thin film of the constituent materials reported till date. The enhanced dielectric properties were thus discussed in terms of the interfacial strain driven polar region due to high lattice mismatch and electrostatic coupling due to polarization mismatch between individual layers. Chapter 6 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the superlattice structures. All the heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher’s universal type of relaxation behavior. The anomalous dispersion was observed in the imaginary dielectric constant at high frequencies. A Debye type relaxation behavior was observed in the impedance analysis at low temperatures, whereas, a departure from ideal ‘Debye’ type was noticed as the temperature was increased. The leakage currents of all the heterostructures were found to be a few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in al the superlattice structures fabricated. Chapter 7 summarizes the present study and discusses about the future work that could give more insight into the understanding of the ferroelectric perovskite heterostructures.

This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.

Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

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Die vorliegende Arbeit präsentiert die ersten detaillierten Untersuchungen des Spin-Reorientierungs-Übergangs in epitaktischen NdCo5-Schichten. Die Proben, die mit gepulster Laserdeposition hergestellt wurden, konnten sowohl als in-plane- als auch als out-of-plane-texturierte Schichten präpariert werden. Für beide Wachstumsvarianten ergaben Röntgendiffraktometrie- und Texturmessungen eine sehr gute Texturierung mit einer nahezu einheitlichen Orientierung der c-Achse, die eine Untersuchung der magnetischen Eigenschaften entlang ausgewählter kristallografischer Richtungen ermöglichte. Die globalen Magnetisierungsmessungen der In-plane-Proben zeigten einen Spin-Reorientierungs-Übergang von einer magnetisch leichten c-Achse für Temperaturen oberhalb von 310 K über einen magnetisch leichten Kegel hin zu einer magnetisch leichten Ebene (a-Achse) unterhalb von 255 K. Die Übergangstemperaturen liegen damit geringfügig über den bisher an Massivproben gemessenen Werten. Aus den magnetischen Hysteresemessungen wurden die magnetokristallinen Anisotropiekonstanten erster und zweiter Ordnung für den Temperaturbereich der magnetisch leichten c-Achse und der magnetisch leichten Ebene ermittelt. Die Untersuchungen der Out-of-plane-Proben wiesen die Existenz einer magnetokristallinen Anisotropie höherer als zweiter Ordnung nach. Sie bewirkt ein unterschiedliches Schaltverhalten der parallel zur a- bzw. b-Achse gemessenen magnetischen Hysteresekurven im Temperaturregime der magnetisch leichten Ebene. Für die in-plane-texturierten Schichten wurde das Domänenmuster und dessen Änderung mit der Temperatur im gesamten Spin-Reorientierungs-Bereich analysiert. Diese Untersuchungen basieren auf in Kooperation mit der Universität Hamburg durchgeführten SEMPA-Messungen. Oberhalb von 318 K liegt eine Zweidomänenkonfiguration mit einer Ausrichtung der Magnetisierung parallel zur c-Achse vor, die beim Abkühlen in das Regime des magnetisch leichten Kegels in einen Vierdomänenzustand übergeht. Unterhalb von 252 K bildet sich eine Zweidomänenkonfiguration mit parallel zur a-Achse orientierter Magnetisierung. Diese lokalen Messungen bestätigten den Spin-Reorientierungs-Übergang mit zu den globalen Magnetisierungsmessungen vergleichbaren Übergangstemperaturen. Für charakteristisch orientierte Domänenwände erfolgten genauere Analysen der Magnetisierungsprozesse in den angrenzenden Domänen. Um ein erweitertes Verständnis der Domänenkonfiguration, deren Temperaturabhängigkeit und der vorhandenen Domänenwände zu erarbeiten, erfolgten mikromagnetische Simulationsrechnungen für ausgewählte Temperaturen. Die Berechnungen wurden sowohl für homogene Systeme als auch für Geometrien mit verschiedenen Pinningzentren durchgeführt. Die Analyse der Domänenwände ergab, dass ihr Bloch- oder Néel-Charakter und die Domänenwandweite von der Temperatur sowie ihrer Ausrichtung parallel zur c- oder a-Achse abhängt. / This thesis presents the first detailed investigation of the spin-reorientation-transition in epitaxial NdCo5 thin films. The samples were prepared by pulsed laser deposition as in-plane or out-of-plane textured films. For both kinds of samples X-ray diffraction and texture measurements revealed a high degree of texture with one common orientation of the c-axis within the film, which allowed an investigation of the magnetic properties along distinct crystallographic directions. Global magnetization measurements of the in-plane textured films showed a spin-reorientation from a magnetic easy axis (c-axis) at temperatures above 310 K via a magnetic easy cone to a magnetic easy plane (a-axis) at temperatures below 255 K. The transition temperatures are slightly higher than values reported for bulk samples. The magnetocrystalline anisotropy constants of first and second order were determined for the regime of the magnetic easy axis and plane. Measurements of the out-of-plane textured films verified the existence of a magnetocrystalline anisotropy of order larger than two, which becomes obvious from a different magnetic switching behavior along the a- and b-axis in the temperature regime of the magnetic easy plane. The domain structure and its changes with temperature were investigated for the in-plane textured films. There exists a two domain state at temperatures above 318 K with an orientation of the magnetization parallel to the c-axis from which a four domain state evolves when cooling down the sample to the easy cone state. Finally, a two domain state exists in the regime of the magnetic easy plane (easy a-axis) with an orientation of the magnetization parallel to the a-axis at temperatures below 252 K. The local measurements confirm the spin-reorientation-transition with transition temperatures comparable to those derived from global magnetization measurements. In addition, a detailed analysis of the magnetization processes for some characteristically oriented domain walls was performed. Micromagnetic simulations were carried out for selected temperatures to achieve a deeper understanding of the temperature dependence of the domain configuration and of the domain walls. The simulations considered homogeneous systems as well as systems with pinning centers. An analysis of the domain walls showed that their character and width depend on temperature and the orientation parallel to the a- or c-axis.

Time-resolved Faraday rotation (TRFR) is a pulsed laser pump/probe optical measurement used to characterize electron spin dynamics in semiconductor materials. A Mach-Zehnder type interferometer with orthogonally polarized arms is presented as a device for TRFR measurement that is superior to optical bridge detection, the traditional measuring technique, since Faraday rotation can be passively optically amplified via interference. Operation of the interferometer is analyzed under ideal conditions. Corrections to the ideal case stemming from imperfectly aligned optics, finite polarization extinction ratios, and an imperfect recombination optic are analyzed using a matrix transformation approach. The design of the interferometer is presented and chronicled. A description of the single-beam active control system utilized to stabilize the interferometer by continuous corrections to the optical path length of one arm with a piezoelectric actuator is given. Optical amplification by increasing the power in either arm of the interferometer is demonstrated and TRFR measurements taken with the interferometer at ambient temperatures are compared with measurements taken with the optical bridge. We find the interferometer to offer a detection limit on the order of 50 mrad at room temperature, which is five times more sensitive than the optical bridge. Isolation and stabilization of the interferometer were also successful in reducing signal noise to a level comparable with the optical bridge. Our results demonstrate that the interferometer is a better detection device for Faraday rotation under ambient conditions. In the immediate future, improvements to the control system should be made and experiments should be performed with high-quality samples at cryogenic temperatures to confirm that the interferometer performs as favorably under those conditions.

Dans la perspective du développement de vitrages électrochromes « en milieu protonique », des films minces électrochromes à coloration anodique, à base d’oxyde de nickel, ont été synthétisés et caractérisés. Afin d’améliorer la durabilité des films minces à base de NiO, trois approches ont été envisagées. (i)Des films d’oxyde de nickel et d’oxyde mixte nickel/lithium, déposés par PLD (Pulsed Laser Deposition). Nous avons étudié l’influence du lithium sur les propriétés physico-chimiques (‘amorphisation..), et les caractéristiques électrochromes (électrochimique-optique) en milieu aqueux KOH 1M. (ii) Des films composites, préparés par voie chimique (solution), constitués d’une phase amorphe (en diffraction des Rayons X), de composition Ti1-xZnxO2-x?x, englobant des cristallites de NiO de ~ 5 nm de diamètre. Les courbes voltampérométriques révèlent que seule la phase NiO est électrochimiquement active, mais la phase amorphe, grâce aux lacunes anioniques neutres, ?x, renforce la tenue mécanique des films déposés sur les substrats FTO/verre. Il s’ensuit que ces films composites sont plus stables au cyclage, en milieu aqueux KOH 1M, que leurs homologues TiO2/NiO. (iii) Des films minces d’oxyde de nickel dopés par du carbone, préparés par une voie sol-gel originale, présentant une remarquable tenue en cyclage (> 25000 cycles en milieu aqueux KOH 1M), jamais observée jusqu’ici pour NiO. / Aiming at enhancing the electrochromic properties of NiO thin films, deposited on FTO substrates, we have employed three different approaches. They deal with: 1) lithium doping of NiO, the corresponding thin film-deposition method is PLD (Pulsed Laser Deposition); 2) NiO nanoparticles embedded into zinc doped amorphous titanium oxide matrix, a solution method is used to deposit the corresponding thin films ; 3) Carbon-doped NiO thin films deposited using, a specific sol-gel method. Owing to lithium doping of NiO, we could induce film amorphization, thereby enhancing the film electrochemical-capacity. Most importantly, the adhesion between the film and the FTO substrate was improved leading to enhanced electrochemical cyclability in aqueous KOH electrolyte. We could enhance the electrochromic performances of TiO2/NiO composite thin films by doping TiO2 with Zn2+, forming to a new composite thin film Ti1-xZnxO2-x?x-NiO. Finally we have successfully stabilized the electrochromic properties (durability and optical property) of NiO thin films in aqueous KOH electrolyte, owing to the development of a specific sol-gel method leading to carbon-doped NiO nanoparticles. For the first time 25000 cycles were successfully achieved without significant decrease of the electrochromic performances.