This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.

Elektronik för extrema miljöer, som kan användas vid hög temperatur, hög strålning och omgivning med frätande gaser, har varit starkt önskvärd vid utforskning av rymden och övervakning av kärnreaktorer. Kiselkarbid (SiC) är en av kandidaterna inom material för extrema miljöer på grund av sin höga temperatur- och höga strålnings-tolerans. Syftet med denna avhandling är att karakterisera 4H-SiC MOSFETar vid hög temperatur och att konstruera SPICE modeller för 4H-SiC MOSFETar. MOSFET-transistorer karakteriserades till 500°C. Med användande av karaktäristik för en 4H-SiC NMOSFET med L/W = 10 µm / 50 µm, anpassades en SPICE LEVEL 2 kretsmodell. Modellen beskriver DC karakteristiska av 4H- SiC MOSFETar mellan 25ºC och 450ºC. Baserat på SPICE-kretsmodellen simulerades egenskaper för operationsförstärkare och digitala inverterar. Därutöver analyserades driften av pseudo-CMOS vid hög temperatur och principen för konstruktion av pseudo-CMOS föreslogs. Arean och utbytet (s.k. yield) av pseudo-CMOS integrerade kretsar uppskattades och det visar sig att SiC pseudo-CMOS integrerade kretsar kan använda mindre area än SiC CMOS integrerade kretsar. / Harsh environment electronics, which can be operated at high-temperature, high-radiation, and corrosive gas environment, has been strongly desired in space exploration and monitoring of nuclear reactors. Silicon Carbide (SiC) is one of the candidates of materials for harsh environment electronics because of its high-temperature and high-radiation tolerance.‌ The objective of this thesis is to characterize 4H-SiC MOSFETs at high- temperature and to construct SPICE models of the 4H-SiC MOSFETs. The MOSFET devices were characterized up to 500ºC. Using the characteristic of a 4H-SiC NMOSFET with L/W = 10 µm/50 µm, a SPICE LEVEL 2 circuit model was constructed. This model describes the DC characteristic of the 4H-SiC MOSFETs in the range of 25 – 450ºC. Based on the SPICE circuit model, the characteristics of operational amplifiers and digital inverters were simulated. Furthermore, the operation of pseudo-CMOS at high-temperature was analyzed and the operation principle of pseudo-CMOS was suggested. The device area and yield of pseudo-CMOS integrated circuits were estimated and it is shown that SiC pseudo-CMOS integrated circuits can use less area than SiC CMOS integrated circuits.

Wear resistant surfaces with high toughness and impact resistant properties are to be created to improve the life cycle cost of brake discs for trains. A potential solution to this industrial problem is to use an arc cladding process. This work describes the application of gas tungsten arc welding (GTAW) for a structural ceramic Metal Matrix Composite (MMC) on steel. The structure of the two ceramics examined indicates the possibility of development of a wear resistant surface, which would extend the life of the brake disc. Silicon Carbide (SiC) and Tungsten Carbide (WC) ceramics were studied to embed them in a steel matrix by an advanced GTAW method. WC particles penetrated the liquid weld pool and also partially dissolved in the steel matrix, whereas, SiC because of the physical properties never penetrated deeper into the weld pool but segregated on the surface. Successful embedding and bonding of WC led to the decision to exercise an in-depth analysis of the bonding between the WC particles and the matrix. Chemical analysis of the matrix revealed more WC dissolution as compared to particle form within the clad. It was observed that WC reinforcement particles built a strong chemical bond with the steel matrix. This was shown by electron backscatter diffraction (EBSD) analysis. The hard clad layer composed of WC reinforced steel matrix gave an matching friction coefficient to high-strength steel in cold wear conditions through Pin-on-Disc wear and friction testing. A prototype railway brake disc was created with the established GTAW parameters to find out the difficulties of producing industrial scale components.

The global energy market is continuously changing due to changes in demand and fuel availability. Amongst the technologies considered as capable of fulfilling these future energy requirements, Photovoltaics (PV) are one of the most promising. Currently the majority of the PV market is fulfilled by crystalline Silicon (c-Si) solar cell technology, the so called 1st generation PV. Although c-Si technology is well established there is still a lot to be done to fully exploit its potential. The cost of the devices, and their efficiencies, must be improved to allow PV to become the energy source of the future. The surface of the c-Si device is one of the most important parts of the solar cell as the surface defines the electrical and the optical properties of the device. The surface is responsible for light reflection and charge carrier recombination. The standard surface finish is a thin film layer of silicon nitride deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). In this thesis an alternative technique of coating preparation is presented. The HiTUS sputtering tool, utilising a remote plasma source, was used to deposit the surface coating. The remote plasma source is unique for solar cells application. Sputtering is a versatile process allowing growth of different films by simply changing the target and/or the deposition atmosphere. Apart from silicon nitride, alternative materials to it were also investigated including: aluminium nitride (this was the first use of the material in solar cells) silicon carbide, and silicon carbonitride. All the materials were successfully used to prepare solar cells apart from the silicon carbide, which was not used due to too high a refractive index. Screen printed solar cells with a silicon nitride coating deposited in HiTUS were prepared with an efficiency of 15.14%. The coating was deposited without the use of silane, a hazardous precursor used in the PECVD process, and without substrate heating. The elimination of both offers potential processing advantages. By applying substrate heating it was found possible to improve the surface passivation and thus improve the spectral response of the solar cell for short wavelengths. These results show that HiTUS can deposit good quality ARC for silicon solar cells. It offers optical improvement of the ARC s properties, compared to an industrial standard, by using the DL-ARC high/low refractive index coating. This coating, unlike the silicon nitride silica stack, is applicable to encapsulated cells. The surface passivation levels obtained allowed a good blue current response.

Silicon Carbide (SiC) has the potential to significantly improve electronics. As a material, it can conduct heat better, carry larger currents and can give faster responses compared to today’s technologies. One way to produce SiC for use in electronics is by growing a thin layer in a CVD-reactor (chemical vapour deposition). A CVD-reactor leads a carrier gas with small parts of active gas into a heated chamber (susceptor). The gas is then rapidly heated to high temperatures and chemical reactions occur. These new chemical substances can then deposit on the substrate surface and grow a SiC layer. This thesis investigates the effect of different opening angles on a susceptor inlet in a SiC horizontal hot-walled CVD-reactor at Linköping University. The susceptor inlet affects both the flow and heat transfer and therefore has an impact on the conditions over the substrate. A fast temperature rise in the gas as close to the substrate as possible is desired. Even temperaturegradients vertically over the substrate and laminar flow is desired. The CVD-reactor is modeled with conjugate heat transfer using CFD simulations for three different angles of the inlet. The results show that the opening angle mainly affects the temperature gradient over the substrate and that a wider opening angle will cause a greater gradient. The opening angle will have little effect on the temperature of the satellite and substrate.

Tandem solar cells are potentially much more efficient than the silicon solar cells that currently dominate the market but require materials with different bandgaps. This thesis presents work on silicon nanocrystals (Si-NC) embedded in silicon carbide (SiC), which are expected to have a higher bandgap than bulk Si due to quantum confinement, with a view to using them in the top cell of a tandem cell. The strong photoluminescence (PL) of precursor films used to prepare Si-NC in SiC (Si-NC/SiC) was markedly reduced upon Si-NC formation due to simultaneous out-diffusion of hydrogen that passivated dangling bonds. This cannot be reversed by hydrogenation and leads to weak PL that is due to, and limited by, non-paramagnetic defects, with an estimated quantum yield of ≤5×10^-7. Optical interference was identified as a substantial artefact and a method proposed to account for this. Majority carrier transport was found to be Ohmic at all temperatures for a wide range of samples. Hydrogenation decreases dangling bond density and increases conductivity up to 1000 times. The temperature-dependence of conductivity is best described by a combination of extended-state and variable-range hopping transport where the former takes place in the Si nanoclusters. Furthermore, n-type background doping by nitrogen and/or oxygen was identified. In the course of developing processing steps for Si-NC-based tandem cells, a capping layer was developed to prevent oxidation of Si-NC/SiC, and diffusion of boron and phosphorus in nanocrystalline SiC was found to occur via grain boundaries with an activation energy of 5.3±0.4 eV and 4.4±0.7 eV, respectively. Tandem cells with a Si-NC/SiC top cell and bulk Si bottom cell were prepared that exhibited open-circuit voltages V_oc of 900 mV and short-circuit current densities of 0.85 mAcm^-2. Performance was limited by photocurrent collection in the top cell; however, the V_oc obtained demonstrates tandem cell functionality.

Le diamant est un semi-conducteur à grande bande interdite extrêmement prometteur, notamment en électronique et en radiodétection. Notre étude s’intéresse à la production de films diamant en hétéroépitaxie sur du silicium. Cette association constitue en effet un enjeu majeur compte tenu de l’importance du silicium en microélectronique. Les films sont obtenus par dépôt chimique en phase vapeur assisté par plasma microonde (MPCVD), tandis qu’une procédure de polarisation (BEN) sert à initier la germination. L’objectif est d’améliorer le taux d’épitaxie des cristaux diamant et leur densité, deux critères décisifs pour la qualité d’un film diamant hautement orienté. Des analyses MEB, AFM, XPS et RHEED ont ainsi montré que la formation d’une couche de carbure de silicium intermédiaire par carbonisation in situ est très avantageuse, mais qu’elle impose l’utilisation d’une courte durée de polarisation afin de préserver l’intégrité de la couche. Une faible concentration en méthane permet par ailleurs d’éviter une croissance dégradée du diamant. Ces ajustements ont permis de passer d’un taux d’épitaxie de 10 à 45 %, au détriment cependant de la densité. Ceci a pu être compensé par l’amélioration de l’état de surface du substrat via un prétraitement plasma modifiant sa structure (densité multipliée par 20) ou en déposant du carbure de silicium monocristallin. Cette dernière méthode a engendré une germination du diamant « par domaine », très prometteuse et inédite sur ce matériau. Ces travaux montrent donc comment améliorer la qualité de la germination du diamant et permettent d’envisager la production sur silicium de films diamant plus minces et de meilleure qualité cristalline. / Diamond is a wide band gap semiconductor which is very promising, especially in electronics or in radiodetection.Our study is focused in particular on the production of heteroepitaxial diamond films on silicon substrates. In fact, this association is a major issue because of the wide use of silicon in microelectronics. Films are produced by microwave plasma assisted chemical vapour deposition (MPCVD), with a bias procedure (BEN) which enable us to initiate nucleation. Our aim is to achieve a better epitaxial rate of the diamond crystals and also a better density, which are two decisive criteria for the quality of highly oriented diamond films. SEM, AFM, XPS and RHEED analyses have shown that the formation of an intermediary silicon carbide layer by in situ carbonization provides important advantages but that the bias procedure should be short in order to avoid a deterioration of this layer. Moreover, we noticed that the use of a low methane concentration prevents a defective growth of the diamond crystal. These adjustments allowed us to raise the epitaxial rate from 10 to 45 % but, on the other hand, the density decreased. To compenate for this density drop, the state of the substrate surface can be improved, by optimizing its structure through a plasma pretreatment (density mutiplied bu 20) or by preparing a layer of monocrystalline silicon carbide. In this last case, we obtained a diamond nucleation forming domains, which is unusual on silicon carbide but very promising. Consequently, our work shows how to directly improve the quality of the diamond nucleation. This paves the way to the production on silicon of thinner diamond films with better crystal quality.

While the car fleet becomes increasingly larger it is important to lower the amounts of pollutants from each individual diesel or gasoline engine to almost zero levels. The pollutants from these engines predominantly originate from high NOx emissions and particulates, in the case when diesel is utilized, and emissions at cold start from gasoline engines. One way of treating the high NOx levels is to introduce ammonia in the diesel exhausts and let it react with the NOx to form nitrogen gas and water, which is called SCR (Selective Catalytic Reduction). However, in order to make this system reduce NOx efficiently enough for meeting future legislations, closed loop control is required. To realize this type of system an NOx or ammonia sensor is needed. The cold start emissions from gasoline vehicles are primarily due to a high light-off time for the catalytic converter. Another reason is the inability to quickly heat the sensor used for controlling the air-to-fuel ratio in the exhausts, also called the lambda value, which is required to be in a particular range for the catalytic converter to work properly. This problem may be solved utilizing another, more robust sensor for this purpose. This thesis presents the efforts made to test the SiC-based field effect transistor (SiC-FET) sensor technology both as an ammonia sensor for SCR systems and as a cold start lambda sensor. The SiC-FET sensor has been shown to be highly sensitive to ammonia both in laboratory and engine measurements. As a lambda sensor it has proven to be both sensitive and selective, and its properties have been studied in lambda stairs both in engine exhausts and in the laboratory. The influence of metal gate restructuring on the linearity of the sensor has also been investigated. The speed of response for both sensor types has been found to be fast enough for closed loop control in each application. / <p>On the day of the public defence of the doctoral thesis, the status of article III was: in press. Report code: LiU-Tek-Lic-2003:50.</p>

De nombreuses études ont montré la faisabilité de la fabrication de pièces composites en carbure de bore et de silicium par l’infiltration de silicium fondu dans une préforme poreuse en carbure de bore (Reaction bonding). Cette méthode permet l’obtention d'un composite fortement chargé en carbure de bore (phase qui nous intéresse pour les applications balistiques), sans pour autant avoir besoin de monter à des températures de frittage de plus de 2200°C (température habituellement utilisée pour fritter le B4C). Dans notre cas la température maximale est comprise entre 1400-1600°C. Cette thèse s’intéresse plus particulièrement à l’adaptation du procédé de « reaction bonding » au chauffage sous champ micro-ondes. Les micro-ondes sont particulièrement intéressantes en ce qui concerne la rapidité du cycle thermique et le chauffage préférentiel de certaines phases (dans le cas des multi-matériaux). Pour ce faire, plusieurs verrous technologiques ont dû être levés (travail sous atmosphère et sous champs électromagnétiques, température élevée, …). Les composites obtenus sont comparés à leurs équivalents en chauffage conventionnel. Des différences microstructurales ont été observées au niveau du SiC formé lors de la réaction. Cette thèse nous a donc permis de :-trouver des conditions de fabrication de pièces en carbure de bore par chauffage micro-ondes (Argon/Hydrogéné10%, légère surpression : 1.4 bars)-montrer que les propriétés mécaniques (dureté, module d’Young,…) obtenues en four micro-ondes sont équivalentes à celles obtenus en four conventionnel (dureté : 14-20GPa) -montrer d’importante différences microstructurales du carbure de silicium formé, entre les échantillons obtenus sous vide (four conventionnel) et ceux obtenus sous atmosphère contrôlée (micro-ondes et four conventionnel).-montrer que le passage à des plus grandes tailles est possible, il est même plus simple d’infiltrer de grandes pièces que de petites à cause de l’effet de la masse sur la réponse du matériau aux champs électromagnétiques des micro-ondes.Ces résultats sont très prometteurs pour des applications balistiques : fabrication de gilets pare-balles et blindages légers. / Many studies have shown the feasibility of processing silicon-boron carbide composite by infiltration of molten silicon through a porous preform made of boron carbide (Reaction Bonding Process). Using this method, the obtained composite contains a large amount of boron carbide, which is the hardest and the most interesting phase for ballistic application. In our developed process, the maximum processing temperature is 1600°C, which is far below the usual high temperature stage/pressure conditions commonly used to sinter B4C by conventional method (respectively 2200°C and40MPa). The main goal of this thesis is to develop a novel reaction bonded process based on microwave heating. Microwaves heating has many interesting features, including fast heating process, selective heating mechanism (in case of heating multi-materials) and volumetric heating distribution. . To fulfill our goal, many technological issues need to be addressed (working in controlled atmosphere and under microwave field, high temperature ...). This thesis reports the development of this novel process, and materials made from it, exhibit similar properties compared to those made conventionally. However, some microstructural differences were observed in SiC resulting phases. This thesis has allowed to-find out the boron carbide composite piece fabrication conditions in microwave cavity (Argon/Hydrogen10%, slight overpressure: 14bars)-show that mechanical properties (hardness, Young’s modulus…) obtained are comparable to those measured on conventionally reaction bonded produced materials. -show that formed SiC has some microstructural peculiarities, between vacuum samples (for conventional) and ones obtained in hydrogenous argon (using microwave).-show that it is possible to produce larger size piece (66mm of diameter). These results are shown to be promising for ballistic applications, including the fabrication of bulletproof jacket and light armor

A obtenção de cerâmicas de SiC pela sinterização com a presença de aditivos que promovam a formação de uma fase líquida (SFL) durante o processo tem sido uma forma adequada para garantir a menor temperatura de sinterização. Pelo fato de o SiC ser frágil, a busca por melhores propriedades mecânicas e avaliação correta das mesmas, para ser aplicado em ambientes agressivos, é contínua. Com base nisso, na primeira etapa, foram estudados, quanto à molhabilidade sobre o SiC, os sistemas AlN/Re2O3 (Re = Dy, Yb) para serem utilizados como aditivos. Os ângulos de contato medidos foram menores que 10° e considerados adequados para a SFL. O SiC sinterizado com esses aditivos permitiu produzir microestruturas diferentes com o aumento da temperatura. Na segunda etapa, foram sinterizadas amostras na forma de pastilhas em várias temperaturas, cujas condições que apresentaram os melhores resultados de massa específica real e densidade relativa foram tomadas como referência para a sinterização na forma de barras prismáticas. Na terceira etapa, essas amostras foram avaliadas quanto à sua tenacidade à fratura (KIC) pelo método da barra entalhada em V, dureza e resistência à flexão. O comportamento de KIC foi avaliado em função da profundidade e raio de curvatura dos entalhes. Os valores variaram entre 2,59 e 3,64 MPam1/2. Verificou-se que os valores de KIC confiáveis foram aqueles encontrados com pequeno raio de curvatura na ponta do entalhe. Quando o raio foi grande, o mesmo não manteve a singularidade da raiz quadrada da ponta do entalhe, e forneceu valores de KIC superestimados. Foram realizados testes para determinar KIC em ar atmosférico e em água, cujos resultados foram menores em água que em ar, com queda entre 2,56 e 11,26%. A maior resistência sob flexão determinada em 4 pontos foi de 482 MPa. Observou-se correlação direta do tamanho dos grãos nos valores de KIC, dureza e módulo de ruptura das cerâmicas de SiC. / Obtaining SiC ceramics by sintering in the presence of additives that promote a liquid phase formation (LPS) during the process has been a proper manner to ensure the lowest sintering temperature. Because SiC is brittle, an ongoing search for better mechanical properties and proper evaluation of these properties for application in aggressive environments maintained. Thus, in the first stage we studied AlN/Re2O3 systems (Re = Dy, Yb), as to their wettability on SiC, for use as additives. The measured contact angles were smaller than 10° and considered suitable for the LPS. The sintered SiC with these additives allowed the production of different microstructures with the increase in temperature. In the second stage, pellet-shaped samples were sintered at various temperatures, and the conditions showing the best density results were taken as reference for sintering prism-shaped bars. In the third stage, these samples were evaluated for toughness (KIC) by single edge V-notched beam method, hardness, and flexural strength. The behavior of KIC was assessed for notch depth and notch radius of curvature. Values ranged between 2.59 and 3.64 MPa/m1/2. The reliable values of KIC were those found with small radius of curvature at the notch tip. When the radius was large, it did not maintain the singularity of the square root of notch tip and provided overestimated KIC values. Tests were performed to determine KIC in atmospheric air and water, and results were lower in water than in air, dropping between 2.56 and 11.26%. The greatest strength under the 4-point bending test was 482 MPa. We observed a direct correlation of grains size in KIC values, hardness and bending strength of SiC ceramics.