The curiosity of researchers to find novel characteristics and properties of matter constantly pushes for the development of instrumentation based on X-radiation. I present in this thesis techniques for electron spectroscopy based on developments of X-ray sources both in time structure and energy. One part describes a laser driven High-Harmonic Generation source and the application of an off-plane grating monochromator with additional beamlines and spectrometers. In initial experiments, the source is capable of producing harmonics between the 13th and 23rd of the fundamental laser 800 nm wavelength. The intensity in the 19th harmonic, after monochromatization, was measured to be above 1.2·1010 photons/second with a repetition rate of 5 kHz.  The development of a chopper system synchronized to the bunch clock of an electron storage ring is also presented. The system can be used to adjust the repetition rate of a synchrotron radiation beam to values between 10 and 120 kHz, or for the modulation of continuous sources. The application of the system to both time of flight spectroscopy and laser pump X-ray probe spectroscopy is shown. It was possible to measure triple ionization of Kr and in applied studies the valence band of a laser excited dye-sensitized solar cell interface. The combination of the latter technique with transient absorption measurements is proposed. The organic molecule maleic anhydride (MA) and its binding configuration to the three anatase TiO2 crystals (101), (100), (001) has been investigated by means of Xray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine structure Spectroscopy (NEXAFS). The results provide information on the binding configuration to the 101 crystal. High Kinetic Energy Photoelectron Spectroscopy was used to investigate multilayers of complexes of iron, ruthenium and osmium. The benefit of hard X-rays for ex-situ prepared samples is demonstrated together with the application of resonant valence band measurements to these molecules.

Polymer-based photovoltaics have the potential to contribute to boosting photovoltaic energy conversion overall. Besides allowing large-area inexpensive processing, polymeric materials have the added benefit of opening new market applications for photovoltaics due to their low-weight and interesting mechanical properties. The energy conversion efficiency values of polymer photovoltaics have reached new record values over the past years. It is however crucial that stability issues are addressed together with efficiency optimization. Understanding fundamental materials aspects is key in both areas. In the work presented in this thesis, the morphology of polymer:fullerene films and its influence on device performance was studied, as well as the effect of light exposure on the surface of fullerene films. Several polyfluorene copolymers were used for the morphology studies, where the effects of changing spin-coating solvent and of side chain engineering were investigated with dynamic secondary ion mass spectrometry (dSIMS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Polymer-enriched surfaces were found in all blend films, even in the cases with homogeneous distributions in the bulk. Side chain engineering of the polymer led to gradual changes in the compositional variations perpendicular to the surface, and to slight variations in the photocurrent. The electronic structure of the fullerene derivative PCBM was studied in detail and the spectroscopic fingerprint of the materials was analysed by comparison with theoretically simulated spectra. Photo-stability studies done in air showed that the surface of fullerene films underwent severe damages at the molecular level, which is evident from changes in the valence band and X-ray absorption spectra. These changes were explained by transitions from sp2-type to sp3 hybridization of the carbon atoms in the cage that resulted in the destruction of the fullerene cage.

A photo-voltaic system consists of solar cells, power converters, battery and the load. The power converter interfaces the solar cells, battery and the load. The battery serves to equalise the energy demand (load) and the energy supply (solar cell). Currently the solar cells and the battery cost nearly 90% of the system cost. A typical photo-voltaic system can adopt various power bus configurations. Battery tied bus is the simplest of the power bus configurations. In this topology, the battery is always attached to the bus. This system is extremely simple in terms of power circuit configuration as well as control. Such systems weigh less and are more reliable. However, the battery tied bus suffers certain disadvantages. The first among them is the poor utilisation of solar panels. The load has to tolerate the full swing of the battery voltage variation. On account of the constraint on the solar panel voltage, the solar panels may not be loaded to the maximum power capacity. Such operating conditions lead to gross under-utilisation of the expensive solar panels. The battery tied bus configuration is designed, built and evaluated experimentally with 4 solar panels rated at 35 W each and a lead acid battery of 12 V 42 AH rating. This thesis explores alternate power architecture to overcome the above limitations. Load regulation and maximum power harvesting from the solar panels are the objectives. In the proposed configuration, a bidirectional power converter is inserted between the bus and the battery. The bidirectional power converter operates in boost mode and charges the battery when the sunlight is available. During eclipse period, it operates in buck mode and meets the load demand. The maximum power is extracted from the panels by controlling the voltage across the solar panels. The bus voltage reference is computed by MPPT block and the bus voltage is regulated to the reference voltage through closed loop control. So the maximum power is extracted from the panels at the expense of extra bidirectional power converter. Even though there is an additional power loss due to the introduction of power converter, this power bus configuration is superior because it increases the output power from the panel itself. The entire control logic implementation is done digitally using dspic30F6010A. The simulation is done by writing script files in C language. The proposed bus configuration is designed, built and evaluated experimentally with the same setup and the results are then compared.

Fullerenhaltige Bulk-Heterojunction-Solarzellen auf Polymerbasis zeigen derzeit eine geringe Langzeitstabilität, die unter anderem auf der Entmischung der Bulkphasen beruht. In dieser Arbeit wurden daher auf neuartige Weise Blockcopolymere entwickelt, die zur Stabilisierung der Phasen dienen können. Ausgehend von Poly-3-hexylthiophen-Makroinitiatoren wurde ein zweiter Block mit reaktivem Comonomer polymerisiert, das zur Anbindung von reinem Fullerens bzw. von Fullerenderivaten diente. Die fullerenfunktionalisierten Polymere wurden in Modell-Systeme eingemischt und zeigten erste Verbesserungen bezüglich der Phasenstabilisierung.

As the efficiency potential for the industrial P-type Al-BSF silicon solar cell reaches its limit, new solar cell technologies are required to continue the pursuit of higher efficiency solar power at lower cost. It has been demonstrated in literature that among possible alternative solar cell structures, cells featuring a local BSF (LBSF) have demonstrated some of the highest efficiencies seen to date. Implementation of this technology in industry, however, has been limited due to the cost involved in implementing the photolithography procedures required. Recent advances in solar cell doping techniques, however, have identified ion implantation as a possible means of performing the patterned doping required without the need for photolithography. In addition, past studies have examined the potential for building solar cells on N-type silicon substrates, as opposed to P-type. Among other advantages, it is possible to create N-type solar cells which do not suffer from the efficiency degradation under light exposure that boron-doped P-type solar cells are subject to. Industry has not been able to capitalize on this potential for improved solar cell efficiency, in part because the fabrication of an N-type solar cell requires additional masking and doping steps compared to the P-type solar cell process. Again, however, recent advances in ion implantation for solar cells have demonstrated the possibility for bypassing these process limitations, fabricating high efficiency N-type cells without any masking steps. It is clear that there is potential for ion implantation to revolutionize solar cell manufacturing, but it is uncertain what absolute efficiency gains may be achieved by moving to such a process. In addition to development of a solar specific ion implant process, a number of new thermal processes must be developed as well. With so many parameters to optimize, it is highly beneficial to have an advanced simulation model which can describe the ion implant, thermal processes, and cell performance accurately. Toward this goal, the current study develops a process and device simulation model in the Sentaurus TCAD framework, and calibrates this model to experimentally measured cells. The study focuses on three main tasks in this regard: Task I - Implant and Anneal Model Development and Validation This study examines the literature in solar and microelectronics research to identify features of ion implant and anneal processes which are pertinent to solar cell processing. It is found that the Monte Carlo ion implant models used in IC fabrication optimization are applicable to solar cell manufacture, with adjustments made to accommodate for the fact that solar cell wafers are often pyramidally textured instead of polished. For modeling the thermal anneal processes required after ion implant, it is found that the boron and phosphorus cases need to be treated separately, with their own diffusion models. In particular, boron anneal simulation requires accurate treatment of boron-interstitial clusters (BICs), transient enhanced diffusion, and dose loss. Phosphorus anneal simulation requires treatment of vacancy and interstitial mediated diffusion, as well as dose loss and segregation. The required models are implemented in the Sentaurus AdvancedModels package, which is used in this study. The simulation is compared to both results presented in literature and physical measurements obtained on wafers implanted at the UCEP. It is found that good experimental agreement may be obtained for sheet resistance simulations of implanted wafers, as well as simulations of boron doping profile shape. The doping profiles of phosphorus as measured by the ECV method, however, contain inconsistencies with measured sheet resistance values which are not explained by the model. Task II - Device Simulation Development and Calibration This study also develops a 3D model for simulation of an N-type LBSF solar cell structure. The 3D structure is parametrized in terms of LBSF dot width and pitch, and an algorithm is used to generate an LBSF structure mesh with this parametrization. Doping profiles generated by simulations in Task I are integrated into the solar cell structure. Boundary conditions and free electrical parameters are calibrated using data from similar solar cells fabricated at the UCEP, as well as data from lifetime test wafers. This simulation uses electrical models recommended in literature for solar cell simulation. It is demonstrated that the 3D solar cell model developed for this study accurately reproduces the performance of an implanted N-type full BSF solar cell, and all parameters fall within ranges expected from theoretical calculations. The model is then used to explore the parameter space for implanted N-type local BSF solar cells, and to determine conditions for optimal solar cell performance. It is found that adding an LBSF to the otherwise unchanged baseline N-type cell structure can produce almost 1% absolute efficiency gain. An optimum LBSF dot pitch of 450um at a dot size of 100um was identified through simulation. The model also reveals that an LBSF structure can reduce the fill factor of the solar cell, but this effect can be offset by a gain in Voc. Further efficiency improvements may be realized by implementing a doping-dependent SRV model and by optimizing the implant dose and thermal anneal. Task III - Development of a Procedure for Ion Implanted N-type LBSF Cell Fabrication Finally, this study explores a method for fabrication of ion-implanted N-type LBSF solar cells which makes use of photolithographically defined nitride masks to perform local phosphorus implantation. The process utilizes implant, anneal, and metallization steps previously developed at the UCEP, as well as new implant masking steps developed in the course of this study. Although an LBSF solar cell has not been completely fabricated, the remaining steps of the process are successfully tested on implanted N-type full BSF solar cells, with efficiencies reaching 20.0%.

The objective of this thesis is to develop low-cost high-efficiency crystalline silicon solar cells which are at the right intersection of cost and performance to make photovoltaics (PV) affordable. The goal was addressed by improving the optical and electrical performance of silicon solar cells through process optimization, device modeling, clever cell design, fundamental understanding, and minimization of loss mechanisms. To define the right intersection of cost and performance, analytical models to assess the premium or value associated with efficiency, temperature coefficient, balance of system cost, and solar insolation were developed and detailed cost analysis was performed to quantify the impact of key system and financial parameters in the levelized cost of electricity from PV.

Ternary chalcopyrite compounds are the semiconductors with suitable properties to be used as absorber materials in thin film solar cells. AgInSe2 is a promising candidate with its several advantages over the widely used CuInSe2. The purpose of this study was to optimize the physical properties of the Ag-In-Se (AIS) thin films that were deposited by e-beam evaporation of Ag3In5Se9 single crystal powder for solar cell applications by means of post-annealing process under nitrogen atmosphere. The as-grown AIS thin films were annealed at 200, 300 and 400oC and their structural, optical, electrical and photoelectrical properties were examined to observe the effects of post-annealing process. Structural characterization of the films was performed by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses. Optical properties of the films were investigated by optical transmittance measurements. Electrical and photoelectrical properties of the films were examined by temperature dependent conductivity, photoconductivity under different illumination intensities and spectral photoresponse measurements. It was discovered that the annealing of AIS thin films at 200oC resulted in the best physical properties for solar cell applications. The obtained films were polycrystalline with mixed binary and ternary crystalline phases, such as Ag3In5Se9, AgInSe2 and InSe, and showed n-type conductivity with room temperature conductivity value of 2.3x10-6 (Ohm&shy / cm)-1. The band gap energy of the 200oC-annealed films was determined as 1.68 eV from spectral photoresponse measurements. The results of the study revealed that the inadequate Ag incorporation and segregation and/or reevaporation of Se atoms at high annealing temperatures were the major problems encountered in producing single phase polycrystalline AgInSe2 thin films. The required stoichiometry of thin films should be maintained during the growth of the films by means of an alternative deposition procedure and the films should be selenized during post-annealing process.

The rapid development of organic electronics is leading to a number of promising devices in the area of energy sources and conservation (e.g., solar cells and solid-state lighting), while also advancing display technology, sensors, and thin-film transistors. One obstacle to this development is the susceptibility of these devices to water vapor and oxygen, which are well known to cause rapid degradation in many organic electronic devices. In order to guarantee the minimum lifetime needed for various applications, high barrier performance encapsulation materials and structures must be developed and has been the object of much experimental research. However, there is a dearth of comprehensive studies which link the characterization, modeling, and integration of ultra-high barrier films with organic electronics. Such studies are necessary in order to advance the understanding of thin-film encapsulation and to find methodologies which greatly improve its performance. The present work investigates the processing and development of high quality single-layer and multilayer encapsulation architectures for ultra-high barrier films. For compatibility with organic electronics, this study focuses on low temperature fabrication processes which can lead to poor film quality. To circumvent the issue of defects, multilayer encapsulation films with alternating inorganic and organic layers were used to provide ultra-low permeation films. By reducing the complexity of typical multilayer architectures, a new encapsulation processing procedure was developed which combines a plasma enhanced chemical vapor deposition fabricated inorganic film followed by a high quality film deposited by atomic layer deposition. The improvements that this hybrid film provided were through the quick coating of the device via plasma-based deposition followed by a short atomic layer deposition exposure to seal the defects in the first film. The barrier performance of all thin-film encapsulation was characterized in terms of the effective water vapor transmission rate (WVTR) by using Ca corrosion tests. A detailed study of the water vapor permeation mechanism through thin-film layers was presented. Finally, fully characterized encapsulation layers were integrated with organic solar cells to validate the effectiveness of the barrier layers. The compatibility of the encapsulation process with organic devices was investigated by comparing the performance parameters of organic device before and after encapsulation. The parameters of encapsulated organic devices with various encapsulation structures were compared with their initial values as a function of exposure time to atmosphere to provide a link between effective WVTR and shelf-lifetime of encapsulated organic devices.

This work investigates organic solar cells made of small molecules. Using the material system α,ω-bis(dicyanovinylene)-sexithiophene (DCV6T) - C60 as model, the correlation between the photovoltaic active layer morphology and performance of the solar cell is studied. The chosen method for controlling the layer morphology is applying different substrate temperatures (Tsub ) during the deposition of the layer. In neat DCV6T layers, substrate heating induces higher crystallinity as is shown by X-ray diffraction and atomic force microscopy (AFM). The absorption spectrum displays a more distinct fine structure, a redshift of the absorption peaks by up to 11 nm and a significant increase of the low energy absorption band at Tsub = 120°C compared to Tsub = 30°C. Contrary to general expectations, the hole mobility as measured in field effect transistors and with the method of charge extraction by linearly increasing voltage (CELIV) does not increase in samples with higher crystallinity. In mixed layers, investigations by AFM and UV-Vis spectroscopy reveal a stronger phase separation induced by substrate heating, leading to larger domains of DCV6T. This is indicated by an increased grain size and roughness of the topography, the increase of the DCV6T luminescence signal, and the more distinct fine structure of the DCV6T related absorption. Based on the results of the morphology analysis, the effect of different substrate temperatures on the performance of solar cells with flat and mixed DCV6T - C60 heterojunctions is investigated. In flat heterojunction solar cells, a slight increase of the photocurrent by about 10% is observed upon substrate heating, attributed to the increase of DCV6T absorption. In mixed DCV6T : C60 heterojunction solar cells, much more pronounced enhancements are achieved. By varying the substrate temperature from -7°C to 120°C, it is shown that the stronger phase separation upon substrate heating facilitates the charge transport, leading to a significant increase of the internal quantum efficiency (IQE), photocurrent, and fill factor. Consequently, the power conversion efficiency (PCE) increases from 0.5% at Tsub = -7°C to about 3.0 % at Tsub ≥ 77°C. Subsequent optimization of the DCV6T : C60 mixing ratio and the stack design of the solar cell lead to devices with PCE of 4.9±0.2 %. Using optical simulations, the IQE of these devices is studied in more detail to identify major remaining loss mechanisms. The evaluation of the absorption pattern in the wavelength range from 300 to 750 nm shows that only 77 % of the absorbed photons contribute to the exciton generation in photovoltaic active layers, while the rest is lost in passive layers. Furthermore, the IQE of the photovoltaic active layers, consisting of an intrinsic C60 layer and a mixed DCV6T : C60 layer, exhibits a lower exciton diffusion efficiency for C60 excitons compared to DCV6T excitons, attributed to exciton migration into the adjacent electron transport layer. / Diese Arbeit befasst sich mit organischen Solarzellen aus kleinen Molekülen. Anhand des Materialsystems α,ω-bis(Dicyanovinylen)-Sexithiophen (DCV6T) - C60 wird der Zusammenhang zwischen Morphologie der photovoltaisch aktiven Schicht und dem Leistungverhalten der Solarzellen untersucht. Zur Beeinflussung der Morphologie werden verschiedene Substrattemperaturen (Tsub ) während des Schichtwachstums der aktiven Schicht eingestellt. Beim Heizen des Substrates weisen DCV6T Einzelschichten eine erhöhte Kristallinität auf, die mittels Röntgenbeugung und Rasterkraftmikroskopie (AFM) erkennbar ist. Zudem bewirkt die Erhöhung der Substrattemperatur von 30°C auf 120°C eine ausgeprägtere Feinstrukturierung des Absorptionsspektrums, eine Rotverschiebung um bis zu 11 nm und eine Verstärkung der niederenergetischen Absorptionsbande. Entgegen den Erwartungen wird weder in Feldeffekttransistoren noch mit der Methode der Ladungsextraktion bei linear steigenden Spannungspulsen (CELIV) eine Verbesserung der Löcherbeweglichkeit in Zusammenhang mit der erhöhten Kristallinität gemessen. Mischschichten mit C60 weisen bei erhöhten Substrattemperaturen eine stärkere Phasentrennung auf, die zu größeren DCV6T Domänen innerhalb der Schicht führt. Dieser Effekt wird zum Einen durch größere Körnung und Rauigkeit der Topographie, zum Anderen durch die Erhöhung des Lumineszenzsignals von DCV6T sowie der Ausprägung der Feinstruktur im Absorptionsspektrum nachgewiesen. Ausgehend von den Ergebnissen der Morphologieuntersuchung werden die Auswirkungen von verschiedenen Substrattemperaturen auf das Leistungsverhalten von DCV6T - C60 Solarzellen mit planarem und Volumen-Heteroübergang analysiert. Solarzellen mit planarem Heteroübergang weisen eine geringe Verbesserung des Photostromes von etwa 10 % beim Heizen des Substrates auf. Diese wird durch die Erhöhung der DCV6T Absorption verursacht. In Volumen-Heteroübergängen führt die stärkere Phasentrennung bei steigender Substrattemperatur im untersuchten Temperaturbereich von -7°C bis 120°C zu einer Verbesserung des Ladungsträgertransports. Dadurch verbessern sich die interne Quanteneffizienz (IQE), der Photostrom und der Füllfaktor. Der Wirkungsgrad der Solarzellen erhöht sich von 0.5 % bei Tsub = -7°C auf 3.0 % bei Tsub ≥ 77°C. Eine weitere Optimierung des DCV6T : C60 Mischverhältnisses und des Schichtaufbaus ermöglicht Solarzellen mit Wirkungsgraden von 4.9±0.2 %. Mittels optischer Simulationen wird die IQE dieser Solarzellen näher untersucht, um verbleibende Verlustmechanismen zu identifizieren. Es ergibt sich, dass innerhalb des Wellenlängenbereichs von 300 bis 750 nm nur 77 % der absorbierten Photonen tatsächlich in den photovoltaisch aktiven Schichten absorbiert werden, während der Rest in nicht aktiven Schichten verloren geht. Des Weiteren kann nachgewiesen werden, dass C60 Exzitonen aus der aktiven Schicht, bestehend as einer intrinsischen C60 Schicht und einer DCV6T : C60 Mischschicht, durch Diffusion in die angrenzende Elektronentransportschicht verloren gehen.

A metallic hole array of a rectangular converging-diverging channel (RCDC) shape exhibits extraordinary transmission for wavelengths larger than the periodicity of the holes. We use a three-dimensional (3D) finite element method to analyze the transmission characteristics of two-dimensional metallic hole arrays (2D-MHA) with RCDC. For a straight channel MHA, when the aperture size is reduced, the transmission peaks have a blue-shift. The same result is observed for a smaller gap throat for the RCDC structure. For the rectangular holes with a high length-width ratio, a similar blue-shift in the transmission peaks as well as a narrower full width at half maximum (FWHM) are observed. The asymmetry from the rectangular shape gives this structure high selectivity for light with different polarizations. Furthermore, the RCDC shape gives extra degrees of geometrical variables to 2D-MHA for tuning the location of the transmission peak and the FWHM. Tunable extraordinary transmission via changing temperature of a porous metallic layer on top of a thin layer of dielectric strontium titanate (STO) is then studied. The metallic layer has a through-hole array and each hole has a circular converging-diverging channel (CDC) shape, which induces the excitation of surface plasmon polaritons (SPPs) and then results in a controllable extraordinary optical transmission in the terahertz (THz) frequency range. We use a three-dimensional (3D) finite element method to analyze the transmission characteristics of the structure. Location and magnitude of the transmission peaks can be adjusted by the hole size, converging angle, and thicknesses of metal and STO layers. Remarkably, the suggested structure presents a strong transmission dependency on temperature, which offers a new approach to actively and externally tune the transmission. Currently, the performances of thin film solar cells are limited by poor light absorption and carrier collection. In this research, large, broadband, and polarization-insensitive light absorption enhancement is realized via integrating with unique metallic nanogratings. Through simulation, three possible mechanisms are identified to be responsible for such an enormous enhancement. A test for totaling the absorption over the solar spectrum shows an up to ~30% broadband absorption enhancement when comparing to bare thin film cells. Overall performance of a thin film solar cell is determined by the efficiency of conversing photons to electrons that include light absorption, carrier generation and carrier collection processes. Photon management via hybrid designing has been emerging as a powerful means to further boost the conversion efficiency. Here a new nanograting solar cell design, which can be universal and a new solar cell platform technology, is proposed with goals to achieve large enhancement on broadband light absorption and carrier generation, most importantly, under the much reduced usage of active and non-earth-abundant materials. A test for the short circuit current density in CuIn[subscript x]Ga([subscript 1-x])Se₂ (CIGS) thin film solar cells shows an up to ~250% enhancement when comparing to the corresponding bare thin film cells. Besides that, by placing metal strips on top of the nanograting, which act as the top electrode, this design is able to reduce the use of non-earth-abundant materials such as indium that is normally used in both active and transparent conducting materials. / text