Ces travaux de recherche portent sur la conception et la réalisation de commutateurs RF basées sur l’intégration de matériaux innovants fonctionnels tels que le dioxyde de vanadium (VO2) et les alliages de chalcogénures de types Ge2Sb2Te5 (GST) et GeTe. Le principe de fonctionnement de ces composants repose sur le changement de résistivité que présentent ces matériaux. Le VO2 possède une transition Isolant-Métal (MIT) autour de 68°C à travers laquelle le matériau passe d’un état isolant (forte résistivité) à un état métallique (faible résistivité). La transition MIT présente l’intérêt de pouvoir être initiée sous l’effet de plusieurs types de stimuli externes (thermique, électrique et optique) avec de faibles temps de commutation. Les alliages de types GST et GeTe ont la particularité de commuter réversiblement entre un état amorphe à forte résistivité à un état cristallin à faible résistivité suite à un traitement thermique spécifique. Les commutateurs à base de GST ou de GeTe présentent l'avantage de pouvoir opérer en mode bistable car le changement de résistivité présenté par ces matériaux est de type non volatile. Les composants réalisés ont de bonnes performances électriques (isolation et pertes d’insertion) sur une large bande. Nos travaux de recherche visent à proposer une solution alternative aux solutions classiques (semi-conducteurs et MEMS-RF) pour réaliser des commutateurs RF qui peuvent être par la suite utilisés dans la conception des dispositifs reconfigurables (filtres, Antennes). / This research work focuses on the design and realization of RF switches based on the integration of new materials such as vanadium dioxide (VO2), Ge2Sb2Te5 (GST) and GeTe chalcogenides alloys. The operating principle of these devices is based on the resistivity change presented by these materials. VO2 exhibits a Metal-Insulator transition (MIT) around 68°C for which the material changes from an insulating state (high resistivity) to a metallic one (low resistivity). The MIT transition can be triggered in different ways (thermally, electrically and optically) with low switching time. GST and GeTe alloys have the particularity to be reversibly switched between a high resistive-amorphous state to low resistive-crystalline state, under a specific heat treatment. Thanks to the non-volatile resistivity change presented by these materials, GST/GeTe-based switches are able to operate in bistable mode. The fabricated devices exhibit good electrical performances (insertion loss and isolation) over a broadband. The aim of our work is to propose an alternative solution to conventional technologies (semiconductors and RF-MEMS), to design RF switches that can be used afterward in the design of reconfigurable devices (filters, antennas).

In this thesis, experimental studies are reported of ultrafast dynamics and third order optical nonlinear coefficients of carbon nanotubes, and time resolved coherent phonon dynamics of semiconductors and rare earth titanates. The thesis is divided into three parts. The first part presents (i) general introduction to theoretical background on nonlinear optical susceptibility and time resolved studies, and systems studied (chapter 1) and (ii) experimental techniques (chapter 2). The second part of the thesis deals with the measurements of third order nonlinear susceptibilities and ultrafast dynamics of single and double walled carbon nanotubes (chapter 3). The third part contains coherent phonon dynamics in semiconductors, Te (chapter 4), Bi2Te3 (chapter 5), and ZnTe (chapter 6) and spin-frustrated rare earth titanate insulators (chapter 7). Chapter 1: This chapter is a general introduction to the thesis. The chapter is divided into two parts: (i) light-matter interaction, and (ii) systems studied. Under light-matter interaction, we describe the required theoretical and conceptual background of nonlinear optical susceptibilities and time resolved carrier and phonon dynamics. In the next part, a brief summary of details of the systems studied, that include carbon nanotubes (single and double walled), semiconductors (Te, Bi2Te3 and ZnTe) and insulating spin-frustrated rare earth titanates (Gd2Ti2O7, Dy2Ti2O7 and Tb2Ti2O7), are presented. Chapter 2: Details of the ultrafast laser systems (femtosecond oscillator and amplifier), pulse width measurements and ultrafast experimental pump-probe and z-scan techniques, used in this thesis are given in this chapter. Chapter 3: Here the experimental results on the measurements of third order optical nonlinearity and ultrafast dynamics of single and double walled carbon nanotubes are presented. The chapter starts with a general overview of optical switching followed by known ultrafast dynamics and nonlinear studies on carbon nanotubes. In the next section, our theoretical modelling of nonlinear absorption and refraction in the limit of saturable absorption is described. The final two sections depict our results on single and double walled carbon nanotubes. These studies indicate that double walled carbon nanotubes are best candidates for ultrafast optical switching. Chapter 4: This chapter presents temperature and pump fluence dependent femtosecond time resolved reflectivity measurements on tellurium. The chapter starts with an overview of previous pump-probe reflectivity studies at room temperature on tellurium followed by our results. A totally symmetric A1 coherent phonon at 3.6 THz responsible for the oscillations in the reflectivity data is observed to be strongly positively chirped (i.e, phonon time period decreases at longer pump-probe delay times) with increasing photoexcited carrier density, more so at lower temperatures. We show for the first time that the temperature dependence of the coherent phonon frequency is anomalous (i.e, increasing with increasing temperature) at high photoexcited carrier density due to electron-phonon interaction. At the highest photoexcited carrier densities of ~ 1.4 x 1021cm-3 and the sample temperature of 3K, the lattice displacement of the coherent phonon mode is estimated to be as high as ~ 0.24 Å. Numerical simulations based on coupled effects of optical absorption and carrier diffusion reveal that the diffusion of carriers dominates the non-oscillatory electronic part of the time-resolved reflectivity. Finally, using the pump-probe experiments at low carrier density of 6 x 1018 cm-3, we separate the phonon anharmonicity to obtain the electron-phonon coupling contribution to the phonon frequency and linewidth. Chapter 5: This chapter begins with a introduction of previous ultrafast studies at room temperature on Bi2Te3 and then presents our results on the temperature dependent high pump fluence time resolved reflectivity measurements on Bi2Te3. The time resolved reflectivity data shows two coherently generated totally symmetric A1g modes at 1.85 THz and 3.6 THz at 296K which blue shift to 1.9 THz and 4.02 THz, respectively at 3K. At high photoexcited carrier density of ~ 1.7 x 1021cm-3, the phonon mode at 4.02 THz is two orders of magnitude higher positively chirped than the lower frequency mode at 1.9 THz. The chirp parameter, β is shown to vary inversely with temperature. The time evolution of these modes is studied using continuous wavelet transform of the time-resolved reflectivity data. The analysis shows that the build up time for the two coherent phonons is different. Chapter 6: This chapter starts with a general introduction on various as pects of ZnTe to be used in generation and detection of THz followed by our results on influence of carriers and sample temperature on coherent phonon and polariton generation in ZnTe. Combination of femtosecond Kerr, two photon absorption and impulsive stimulated Raman scattering experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in < 110 > cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two-photon induced free carriers on the creation of both the polaritons and phonons is largest at 4K where the free carrier lifetime is enhanced. Further, the temperature dependant impulsive stimulated Raman scattering on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X) in contrast to the assignment as two-phonon process in earlier studies. Chapter 7: This chapter starts with an introduction on previous Raman studies on the pyrochlore systems accompanied by our results on the generation of coherent optical phonons in spin frustrated pyrochlore single crystals Dy2Ti2O7, Gd2Ti2O7 and Tb2Ti2O7 and their behavior as a function of sample temperature from 296K to 4K. At 4K, two coherent phonons are observed at 5.3 THz (5.0 THz) and ~ 9.3 THz (9.4 THz) for Dy2Ti2O7 (Gd2Ti2O7) whereas three coherent phonons are generated at ~ 4.8 THz, 8.6 THz and 9.6 THz for Tb2Ti2O7. In the case of spin-ice Dy2Ti2O7, a clear discontinuity is observed in the linewidths of both the coherent phonons as well as in the phase of low energy coherent phonon mode, indicating a subtle structural change as also suggested by Raman studies. In comparison, such changes are not seen in the coherent phonons of Gd2Ti2O7, and Tb2Ti2O7. Another important observation is the phase difference of ‘π’ between the modes in all the samples, thus suggesting that the driving forces behind the generation of these modes are different in nature unlike a purely impulsive or displacive mechanism. Chapter 8: This chapter summarizes our results reported in this thesis and gives future directions.

Especialmente nas últimas quatro décadas, muitos estudos se voltaram às variáveis determinantes para a implementação efetiva de sistemas flexíveis de manufatura, tais como seu design, sequenciamento e controle. Neste ínterim, o manejo apropriado do conjunto de ferramentas necessárias para a fabricação de um respectivo lote de produtos foi destacado como fator crucial no desempenho do sistema de produção como um todo. Neste trabalho, abordamos a otimização do número de inserções e remoções de ferramentas no magazine de uma ou mais máquinas numericamente controladas, admitindo-se que uma parcela significativa do tempo de produção é dispensada com estas trocas de ferramentas. De forma mais precisa, a minimização do número de trocas de ferramentas consiste em determinar a ordem de processamento de um conjunto de tarefas, bem como o carregamento ótimo do(s) compartimento(s) de ferramentas da(s) máquina(s), a fim de que o número de trocas seja minimizado. Como demostrado na literatura, mesmo o caso restrito à existência de apenas uma máquina de manufatura (MTSP, do inglês Minimization of Tool Switches Problem) é um problema NP-difícil, o que pode justificar o fato observado de que a maioria dos métodos de solução existentes o abordam de maneira heurística. Consequentemente, concluímos que a extensão ao contexto de múltiplas máquinas é também um problema NP-difícil, intrinsecamente complicado de se resolver. Nosso objetivo consiste em estudar formas eficientes de otimizar o número de trocas de ferramentas em ambientes equipados com máquinas flexíveis de manufatura. Para tanto, abordamos o problema básico, MTSP, e duas de suas variantes, em níveis crescentes de abrangência, que consideram o sequenciamento de tarefas em um conjunto de: (i) máquinas paralelas e idênticas (IPMTC, do inglês Identical Parallel Machines problem with Tooling Constraints); e (ii) máquinas paralelas e idênticas inseridas em um ambiente do tipo job shop (JSSPTC, do inglês Job Shop Scheduling Problem with Tooling Constraints). Classificamos as principais contribuições desta tese com respeito a três aspectos. Primeiramente, empurramos as fronteiras da literatura do MTSP propondo formulações matemáticas para os problemas IPMTC e JSSPTC. Desenvolvemos, também, algoritmos baseados em diferentes técnicas de resolução, como redução de domínio, Path relinking, Adaptive large neighborhood search e a elaboração de regras de despacho. Por último, com o intuito de bem avaliar a eficiência e o alcance de nossos métodos, propomos três novos conjuntos de instâncias teste. Acreditamos, assim, que este trabalho contribui positivamente com pesquisas futuras em um cenário abrangente dentro da minimização das trocas de ferramentas em um sistema flexível de manufatura. / Several studies, especially in the last four decades, have focused on decisive elements for the effective implementation of flexible manufacturing systems, such as their design, scheduling and control. In the meantime, the appropriate management of the set of tools needed to manufacture a certain lot of products has been highlighted as a crucial factor in the performance of the production system as a whole. This work deals with the optimization of the number of insertions and removals from the magazine of one or more numerical controlled machines, assuming that a significant part of the production time is wasted with such tool switches. More precisely, the minimization of tool switches problem (MTSP) consists on determining the processing order of a set of jobs, as well as the optimal loading of the magazine(s) of the machine(s), so that the total number of switches is minimized. As formally demonstrated in the literature, the MTSP is a NP-hard problem even when considering the existence of only one manufacturing machine, which could justify the fact that most of the solution methods tackles it heuristically. We thus conclude that its extension to the case of multiples machines is also NP-hard and, therefore, a problem intrinsically difficult to solve. Our goal consists in studying efficient ways to optimize the number of tool switches in environments equipped with flexible manufacturing machines. For that, we address the basic problem, MTSP, and two MTSP variants, in increasing levels of reach, that consider the job sequencing in a set of: (i) identical parallel machines (Identical Parallel Machines problem with Tooling Constraints, IPMTC); and (ii) identical parallel machines inserted in a job shop environment (Job Shop Scheduling Problem with Tooling Constraints, JSSPTC). The main contributions of this thesis are classified according three aspects. First, we pushed the frontier of the MTSP literature by proposing mathematical formulations for IPMTC and JSSPTC. We also developed algorithms based on different solution techniques, such as domain reduction, Path Relinking, Adaptive Large Neighborhood Search and dispatching rules. Finally, to fully evaluate the effectiveness and limits of our methods, three new sets of benchmark instances were generated. We believe that this work contributes positively to the future of research in a broad scenario inside the minimization of tool switches in flexible manufacturing systems.

Ce travail porte sur l'étude du mélange thermodurcissable - thermoplastique (époxyamine / polyetherimide avec séparation de phase) pour évaluer les performances électriques et thermiques. Ces matériaux seraient des nouveaux candidats pour remplacer la couche d'encapsulation dans les semi-conducteurs, par exemple ceux utilisés comme interrupteur dans les applications électroniques de puissance. Les mélanges de polymères seraient un nouveau candidat en tant qu'isolant pour le système. La matrice epoxy-amine seul et les melanges epoxy / Polyetherimide on été caractérisés par microscopie électronique à transmission, microscopie électronique à balayage, Calorimétrie différentielle à balayage, analyse thermogravimétrique, analyse mécanique dynamique, analyse diélectrique avec simulation analytique et des mesures de conductivité électrique et de tension de claquage ont également été entreprises. Ces techniques complémentaires ont d'abord été utilisées pour étudier la séparation de phases et ensuite pour quantifier la taille des nodules de thermoplastiques dans la matrice thermodurcissable. Cette séparation de phase a été examiné et a montré une diminution des valeurs diélectriques de 15% et une augmentation de la tension de claquage par rapport au système époxy-amine pur. / This work deals with the study of thermoset-thermoplastic blend (epoxy-amine/poly-etherimide phase separated) to assess the electrical and thermal performances. These materials would be new candidates to replace the encapsulation layer in semiconductors, for example ones used as switches in power electronic applications. Polymers blends would be a novel candidate as an insulator for the system. Pure epoxy system as well as Epoxy/Polyetherimide blends where characterized by transmission electron microscopy, scanning electron microscopy, differential scanning calorimetry, thermogravimetric analysis, dynamic mechanical analysis, dielectric analysis with analytical simulation, electrical conductivity and breakdown voltage measurements. These complementary techniques were used first to investigate the presence of the phase separation phenomenon and secondly to quantify the separated nodules size. The effect of this phase separation was examined and showed a decrease in the dielectric values of 15 % and an increase in the breakdown voltage compared to the pure epoxy system. It was finally simulated to show a close assumption of what is found experimentally.

Discovery of ferroelectric (FE) behavior in HfO 2 removed the compatibility roadblocks between the state-of-the-art CMOS and FE memories. Even though FE FETs (FeFETs) are scaled into 22 nm nodes and beyond, the limits of the technology as well as the physical mechanisms and reliability are still under research. In this paper we successfully developed a multiscale modeling platform to understand the interplay between the FE switching and charge trapping. Starting from the nucleation theory and rigorous charge transport modeling we present for the first time a self-consistent modeling framework we used for investigation of reliability and variability in FeFETs.

Ferroelectricity is a material property were a remanent polarization exists under zero electrical field that can be reversed by applying an electrical field [1]. As consequence, two nonvolatile states exist that can be switched by an electrical field. This feature makes ferroelectrics ideally suited for nonvolatile memories with low write energy. Therefore, already in the 1950s first attempts have been made to realize ferroelectric nonvolatile memories based on ferroelectric barium titanate (BTO) crystals having evaporated electrodes on both sides [2]. The success of this approach was hindered by disturb issues that could be solved in the early 1990s by adding a transistor device as a selector [3]. Such a memory is referred to as a ferroelectric random access memory (FeRAM). Since reading of the ferroelectric polarization from a capacitor requires switching of the ferroelectric [1], the information will be destroyed and a write back is necessary. This can be avoided if the ferroelectric is placed inside of the gate stack of a MOS transistor resulting in a ferroelectric field effect transistor (FeFET) [1]. Conventional ferroelectric materials like BTO or lead- zirconium titanate (PZT) cannot be placed directly on silicon since unwanted interface reactions will occur. The necessary interface layer together with the space charge region of the transistor device leads to a rather low capacitance in series with the ferroelectric dielectric and consequently results in a strong depolarization field that has destroyed the nonvolatility of the FeFET device for many years and hinters scaling as well [4]. Today FeRAM devices are established on the market [3,5], but are limited to niche application since scaling is hindered by many integration problems associated to materials like PZT.

The aim of the diploma thesis is the reconstruction of Milevsko railway station. The platforms with access persons with reduced mobility are designed in this station. The rail substructure and station drainage system design was necessary to do within the reconstruction. New assembly of a switches and crossing is the part of reconstruction design as well.

The design of reconstruction of railway stations Šternberk and Bohuňovice comprises the proposal to increase the line speed of the main track to the maximum possible value, the design of station tracks and reconstruction of railway switches and crossings, the design of the new platforms, which implements the requirements for people with reduced mobility and the design of new drainage system. Next, the design of reconstruction comprises the design of the railway superstructure and substructure and the design of railway level crossings.

The subject of the Master's thesis is to design the redevelopment of the Veseli nad Moravou railway station. This renovation will include renewal of both, railway superstructure and substructure, including drainage system and new platform construcion proposal in order to meet current legislation regarding access of persons with reduced mibility and orientation skills. This thesis also deals with design of the track geometry compoments and geometry of set of switches at both heads of the railway station to fulfill the maximum train velocity demands at certain tracks. Last but not least, the rail track scheme of the station has been simplified.

Cette thèse est une étude sur la caractérisation, la modélisation et l’optimisation des effets substrat dans les circuits intégrés, dédies à des applications WLAN.L’objectif de ces travaux de recherche est de développer une nouvelle méthodologie d’extraction qui prenne en compte tous les parasites ; à savoir les modèles RLCK distribués, les effets électromagnétiques, ainsi que le couplage substrat.Les effets substrat ont été optimisés grâce au développement de nouvelles structures d’isolation utilisant des tranches profondes d’isolation (DTI).La prédictibilité des simulations circuits a été améliorée grace à l’introduction d’une nouvelle méthodologie d’extraction, basée sur une approche quasi-statique prenant en compte avec précision la description exacte et complète du procédé BiCMOS ainsi que les pertes dans le substrat, aussi bien diélectriques que résistives.La validité de cette méthodologie a été évaluée en comparant les résultats de simulation avec les mesures sur silicium. La bonne corrélation des résultats démontre la pertinence de cette nouvelle méthodologie. Cette méthode permet de plus, de réduire le « time to maket » grâce à l’optimisation des temps de simulations. / This thesis is about characterization, modelling and optimization of substrate effects in integrated circuits, dedicated to WLAN applications.The objective of this thesis is to develop a new extraction methodology that takes into account all parasites; distributed RLCK models, electromagnetic effects, as well as substrate coupling.Substrate effects have been optimized through the development of a new insulation strategies using deep isolation isolation (DTIs).The circuit predictability has been improved thanks to the development of a new extraction methodology, based on a quasi-static approach taking into account the complete description of the BiCMOS process as well as the substrate loss, both capacitive and resistive effects.The validation of this methodology was evaluated by comparing simulation results with silicon measurements. The good correlation of the obtained results demonstrates the accuracy of this new methodology. This method also makes it possible to reduce the time to market thanks to the optimization of the simulation times.