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A polarization sensitive interferometer for Faraday rotation detectionLaForge, Joshua Michael 23 July 2007 (has links)
Time-resolved Faraday rotation (TRFR) is a pulsed laser pump/probe optical measurement used to characterize electron spin dynamics in semiconductor materials. A Mach-Zehnder type interferometer with orthogonally polarized arms is presented as a device for TRFR measurement that is superior to optical bridge detection, the traditional measuring technique, since Faraday rotation can be passively optically amplified via interference. Operation of the interferometer is analyzed under ideal conditions. Corrections to the ideal case stemming from imperfectly aligned optics, finite polarization extinction ratios, and an imperfect recombination optic are analyzed using a matrix transformation approach. The design of the interferometer is presented and chronicled. A description of the single-beam active control system utilized to stabilize the interferometer by continuous corrections to the optical path length of one arm with a piezoelectric actuator is given. Optical amplification by increasing the power in either arm of the interferometer is demonstrated and TRFR measurements taken with the interferometer at ambient temperatures are compared with measurements taken with the optical bridge. We find the interferometer to offer a detection limit on the order of 50 mrad at room temperature, which is five times more sensitive than the optical bridge. Isolation and stabilization of the interferometer were also successful in reducing signal noise to a level comparable with the optical bridge. Our results demonstrate that the interferometer is a better detection device for Faraday rotation under ambient conditions. In the immediate future, improvements to the control system should be made and experiments should be performed with high-quality samples at cryogenic temperatures to confirm that the interferometer performs as favorably under those conditions.
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Détection de traces d’éléments lanthanides par fluorescence en temps résolu : application industrielle au marquage anti contrefaçon et à l'analyse chimique / Detection of lanthanide elements by time-resolved fluorescence analysis : industrial application to anti-counterfeiting marking and chemical analysisMarais, Arthur 06 February 2018 (has links)
La fluorescence en temps résolu est une méthode d'analyse spectrophotométrique avancée permettant la sélection des photons émis par luminescence sur un critère temporel. Il est ainsi possible, et cela même dans des milieux complexes et pollués issu de l'industrie, de faire émerger sélectivement le signal d'espèces luminescentes présentant des durées de vie de luminescence relativement grandes.Ce type d'analyse spectrale est particulièrement adapté à la détection de trace d'éléments lanthanides. Chacun des éléments de la série présente en effet des propriétés luminescentes uniques bien que largement fonction de la nature des ligands qui les entourent. Les travaux de thèse présentés dans ce manuscrit utilisent avantageusement la constatation précédente. Deux technologies ont étés mise sur pied et/ou optimisées pour permettre un transfert vers des domaines industriels aux cahiers des charges bien définis.Ainsi dans le domaine de la lutte anti-contrefaçon l'ajout de marqueurs luminescents à temps résolu à base de lanthanide rend possible la surveillance de l'origine et du devenir de divers produits industriels.Dans le domaine pétrolier l'analyse des effluents à l'aide de sondes luminescentes à base de lanthanide permet de quantifier le taux résiduel de plusieurs classes d'additifs chimiques et permet d'optimiser la sécurité, la rentabilité et l'impact écologique du processus d'extraction.Dernièrement un prototype de spectrofluorimètre résolu en temps adapté à un usage industriel a été mis au point pour permettre un transfert technologique du laboratoire vers le milieu industriel / Time-resolved fluorescence is an advanced spectrophotometric analysis method which allows the selection of emitted luminescent photons on a time-based parameters. It is possible to extract the signal of long-lived luminescent species even in complex and polluted matrix from the industry. This type of analysis is especially fitted for the detection of lanthanide ions. During this thesis two technologies based on time-resolved analysis were designed to answer specific industrial problematics. The first one yields the residual concentration of chemical additives used during oil and gas extraction. The second one aims at protecting crude oils and refined fuels from counterfeiting. They both rely on the use of lanthanide complex and the measurement of their luminescent properties. A prototype of time-resolved spectrofluorimeter was also built to transfer the technologies from the laboratory to the industrial world
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Mesures résolues en temps dans un conducteur mésoscopique / Time resolved measurements in a mesoscopic conductorRoussely, Grégoire 07 July 2016 (has links)
Au cours de la dernière décennie, un important effort a été fait dans le domaine des conducteurs électroniques de basse dimensionnalité afin de réaliser une électronique à électrons uniques. Une idée particulièrement attractive étant de pouvoir contrôler complétement la phase d’un électron unique volant pour transporter et manipuler de l’information quantique dans le but de construire un qubit volant. L’injection contrôlée d’électrons uniques dans un système électronique bidimensionnel balistique peut être fait grâce à une source d’électrons uniques basée sur des pulses de tensions lorentziens sub-nanosecondes. Une telle source peut aussi être utilisée pour mettre en évidence de nouveaux phénomènes d’interférences électroniques. Lorsqu’un pulse de tension court est injecté dans un interféromètre électronique, de nouveaux effets d’interférences sont attendus du fait de l’interaction du pulse avec les électrons de la mer de Fermi. Pour la réalisation de cette expérience, il est important de connaître avec précision la vitesse de propagation du paquet d’onde électronique créé par le pulse.Dans cette thèse, nous présentons des mesures résolues en temps d’un pulse de tension court (<100 ps) injecté dans un fil quantique 1D formé dans gaz d’électron bidimensionnel qui nous ont permis de déterminer sa vitesse de propagation. Nous montrons que le pulse se propage bien plus vite que la vitesse de Fermi d’un système sans interaction. La vitesse de propagation est augmentée par les interactions électron-électron. Pour un fil quantique contenant un grand nombre de modes, la vitesse mesurée est en excellent accord avec la vitesse d’un plasmon dans un système 2D en présence de grilles métalliques. En modifiant le potentiel de confinement électrostatique et donc l’intensité des interactions, nous montrons qu’il est possible de contrôler la vitesse de propagation. Nous avons ensuite étudié un interféromètre électronique à deux chemins basé sur deux fils couplés par une barrière tunnel. Nos mesures préliminaires font ressortir une signature qui peut être attribuée à des oscillations tunnel cohérentes des électrons injectés dans ce système. Dans un future proche, cet interféromètre pourrait être utilisé pour mettre en évidence ces nouveaux effets spectaculaires dus à l’interaction du pulse avec les électrons de la mer de Fermi. / Over the past decade, an important effort has been made in the field of low dimensional electronic conductors towards single electron electronics with the goal to gain full control of the phase of a single electron in a solid-state system. A particular appealing idea is to use a single flying electron itself to carry and manipulate the quantum information, the so-called solid state flying qubit. On demand single electron injection into such a ballistic two-dimensional electron system can be realized by employing the recently developed single electron source based on sub-nanosecond lorentzian voltage pulses. Such a source could also be used to reveal interesting new physics. When a short voltage pulse is injected in an electronic interferometer, novel interference effects are expected due to the interference of the pulse with the surrounding Fermi sea. For the realization of such experiments it is important to know with high accuracy the propagation velocity of the electron wave packet created by the pulse.In this thesis, we present time resolved measurements of a short voltage pulse (<100 ps) injected into a 1D quantum wire formed in a two-dimensional electron gas and determine its propagation speed. We show that the voltage pulse propagates much faster than the Fermi velocity of a non-interacting system. The propagation speed is enhanced due to electron interactions within the quantum wire. For a quantum wire containing a large number of modes, the measured propagation velocity agrees very well with the 2D plasmon velocity for a gated two-dimensional electron gas. Increasing the confinement potential allows to control the strength of the electron interactions and hence the propagation speed. We then have studied an electronic two-path interferometer based on two tunnel-coupled wires. Our preliminary measurements show a signature that can be attributed to the coherent tunneling of the electrons injected into this system. In the near future, this system could be used to reveal these new striking effects due to the interaction of the voltage pulse with the Fermi sea.
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Photostructuration par laser infrarouge femtoseconde de verres photosensibles de phosphates de zinc, d'argent et de gallium / Photostructurable infrared femtosecond laser glass photosensitive phosphate zinc, silver and galliumBourhis, Kevin 23 November 2011 (has links)
La focalisation de lasers à impulsions ultra-brèves dans les verres a montré des potentialités importantes pour la structuration des matériaux transparents, permettant d’envisager la réalisation de dispositifs tout-optique en une seule étape. Le développement de nouveaux matériaux vitreux de composition 40P2O5-55ZnO-xAg2O-(5-x)Ga2O3 permet de tirer avantage de la photosensibilité de l’ion Ag+ pour la structuration de propriétés optiques au cœur du matériau. L’augmentation du taux d’oxyde de gallium provoque la dépolymérisation des chaînes phosphates et s’accompagne de la réticulation du réseau vitreux par des polyèdres GaOx (4 ≤ x ≤ 6). La formation de des derniers n’affecte pas les propriétés d’émission lumineuses, qui proviennent des ions Ag+ isolés dans différents sites cristallographiques. L’exposition des verres sous faisceau laser intense provoque la formation de centres-trous Ag2+, responsables d’une luminescence intense, et de pièges d'électrons Ag0. Un traitement thermique consécutif ou simultané à l’irradiation provoque la dissociation de ces espèces, et s’accompagne de la formation d’agrégats moléculaires de la forme Agmx+. L’utilisation d’un laser femtoseconde à haute cadence permet, en combinant création de paires électron-trou et élévation locale de la température, de réaliser des architectures complexes conduisant à la structuration de propriétés optiques. / The development of new vitreous materials in the 40P2O5-55ZnO-xAg2O-(5-x)Ga2O3 diagram permits to take advantage of the Ag+ ion photosensitivity for structuring optical properties within the material. Increasing the gallium oxide content leads to the depolymerisation of the phosphate chains and the reticulation of the glass network by GaOx polyhedra (4 ≤ x ≤ 6). The formation of the latters does not affect the luminescence properties which are related to silver ions in various crystallographic environments. The intense laser exposure of the glasses leads to the formation of Ag2+ hole centers responsible for an intense luminescence and electron traps Ag0. A subsequent or simultaneous heat treatment provokes the dissociation of the hole centers and is accompanied by the formation of Agmx+ molecular-like clusters. The use of a high repetition rate femtosecond laser combining electrons and hole traps and temperature rising permits to obtain complex features leading to the structuring of optical properties.
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Structures de semiconducteurs II-VI à alignements de bande de type II pour le photovoltaïque / II-VI semiconductor heterostructures with type-II band alignments for photovoltaicsGérard, Lionel 17 December 2013 (has links)
Ce travail porte sur l'étude d'hétérostructures de semiconducteurs II-VI à alignements de bande de type II, en particulier sous forme de superréseaux. Il s'agit d'un système qui peut être prometteur pour une application photovoltaïque, et c'est dans cette optique qu'est orienté ce travail. Une première partie traite ainsi d'une réflexion conceptuelle sur l'apport des interfaces de type II au photovoltaïque.Nous présentons ensuite une étude sur la croissance de CdSe et ZnTe par épitaxie par jets moléculaires, sur différents substrats. Ces matériaux sont particulièrement intéressants et adaptés pour cette application car ils ont un gap direct, quasiment le même paramètre de maille, un alignement de bandes de type II, et le CdSe une bande interdite compatible avec le spectre solaire. Mais en contrepartie il s'agit de semiconducteurs binaires qui n'ont aucun atome en commun, de sorte que la croissance d'échantillons avec des épaisseurs précises à la monocouche près constitue un vrai défi. Pour cette raison nous avons procédé à une étude fine des interfaces grâce à des analyses de diffraction de rayons X et de microscopie en transmission, qui nous permet de conclure sur la nature chimique des atomes à proximité des interfaces.Vient ensuite une étude poussée de spectroscopie sur les effets des interfaces de type II sur les porteurs de charges, à travers leur énergie et cinétique de recombinaison. Nous avons développé un modèle analytique qui permet d'ajuster précisément toutes les caractéristiques observées en relation avec ces interfaces, et qui témoigne d'un mécanisme de séparation des charges très efficace. Nous montrons par la suite que ces effets observés sont des caractéristiques intrinsèques de toutes les interfaces de type II, indépendamment des matériaux et des structures, et que ceux-ci nous permettent d'extraire avec précision les valeurs des décalages de bandes entre différents matériaux à alignement de type II. / This work focuses on the study of II-VI semiconductor heterostructures with type II band alignments, especially in the form of superlattices. This is a system that can be promising for photovoltaic applications, and my work is presented in this perspective. Thus the first part deals with a conceptual reflection on the contribution of type II interfaces for photovoltaics.In a second step I present a study on the growth of CdSe and ZnTe by molecular beam epitaxy on various substrates. These materials are particularly interesting and suitable for this application because they have a direct bandgap, are almost lattice-matched, present a type II band alignment, and CdSe shows a bandgap compatible with the solar spectrum. But in return these are binary semiconductors which have no atoms in common, so that the growth of samples with specific thicknesses close to the monolayer is challenging. For this reason we conducted a detailed study at the interfaces through analysis of X-ray diffraction and transmission electron microscopy, which allows us to conclude on the chemical nature of the atoms near the interfaces.This is followed by a detailed spectroscopy study on the effects of type II interfaces on the charge carriers through their energy and kinetics of recombination. We have developed an analytical model that allows to precisely adjust all the features observed in relation to these interfaces, and shows a very efficient charge separation mechanism. We show later that these effects are inherent characteristics of all interfaces of type II, regardless of materials and structures, and that they allow us to accurately extract the values of band offsets between different materials with type II band alignments.
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Investigation of thermal and mechanical behavior of ultra-thin liquids at GHz frequencies / Investigation des propriétés thermiques et mécaniques de liquides ultra-minces aux fréquences GHzChaban, Levgeniia 11 December 2017 (has links)
La structuration des liquides près d'interfaces est liée aux forces d'interactions liquides/interface à des distances de quelques dimensions moléculaires. Cet effet universel joue un rôle primordial dans divers domaines tels que le transport de chaleur, le transport de particules à travers les membranes biologiques, la nanofluidique, la microbiologie et la nanorhéologie.Le but principal de cette thèse est de réaliser l'échographie par laser de liquides nanostructurés près d'une interface, afin de mieux comprendre les propriétés physiques de liquides confinés à des échelles moléculaires. La méthode utilisée est la technique d'acoustique picoseconde, qui est une technique tout optique impliquant des lasers impulsionnels pour la génération et la détection d'ultrasons picosecondes. Nous avons adapté la technique pour étudier les propriétés acoustiques longitudinales à haute fréquence des liquides ultra-minces. Les résultats de la diffusion de Brillouin dans le domaine temporel sont utilisés pour déterminer le profil de distribution de la température dans le volume de liquide étudié qui peut être extrapolé aux dimensions nanométriques. Les résultats sur le changement de la fréquence de Brillouin aussi bien que sur l’atténuation acoustique en fonction de la puissance du laser donnent un aperçu de la relation entre les propriétés thermiques et mécaniques des liquides. L'analyse de Fourier des résultats pour différentes épaisseurs de liquide donnent l'information sur la vitesse du son et de l’atténuation aux fréquences GHz. Ce nouveau schéma expérimental est une première étape vers la compréhension des liquides confinés mesuré par l'échographie d'ultrasons aux fréquences GHz. / The phenomenon of liquid structuring near interfaces is related to the liquid/interface interaction forces at distances of some molecular dimensions. Despite the fact that this universal structuring effect plays a key role in various fields such as heat transport, particle transport through biological membranes, nanofluidics, microbiology and nanorheology, the experimental investigation of liquid structuring remainschallenging.The aim of this PhD thesis is the experimental study of the structuring/ordering of liquids at nanoscale distances from their interfaces with solids. In this context, we have adapted the experimental technique of picosecond laser ultrasonics to investigate high-frequency longitudinal acoustic properties of ultrathin liquids confined between solid surfaces of different types. At first, we will present results of time-domain Brillouin scattering (TDBS) used to determine the temperature distribution profile in the investigated liquid volume which can be extrapolated to nanometer dimensions. Results for the evolution of the extracted Brillouin scattering frequencies and attenuation rates recorded at different laser powers give insight to the intrinsic relationship between thermal and mechanical properties of liquids. Second, we will describe our results for the measurements of mechanical properties of ultrathin liquids with a nanometric resolution. Fourier analysis of the recorded TDBS signals for different liquid thicknesses yield the value of the longitudinal speed of sound and attenuation at GHz frequencies. This novel TDBS experimental scheme is a first step towards the understanding of confined liquids measured by GHz ultrasonic probing.
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Tempos de relaxação e decoerência em ensembles de pontos quânticos / Decoherence and relaxation time in an ensemble of quantum dotsGonzalez Hernandez, Felix Guillermo 10 May 2007 (has links)
Orientador: Gilberto Medeiros Ribeiro / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-09T10:48:50Z (GMT). No. of bitstreams: 1
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Previous issue date: 2007 / Resumo: Medidas experimentais foram realizadas para determinar as escalas de tempo de relaxação e decoerência do spin eletrônico como bit quântico. A estrutura dos estados de exciton foi investigada com o objetivo de servir como estados intermediários na manipulação do spin. O sistema utilizado para o estudo de decoerência é um ensemble de pontos quânticos auto-formados semicondutores.
Dois temas servem como eixos centrais dos três experimentos desenvolvidos nesta tese: a polarização de spin e o fator g de Landé. No primeiro experimento, ao incluir o efeito do reservatório térmico, foi obtido o grau de polarização do spin (populações dos níveis up e down) para as camadas s e p. O desdobramento dos níveis orbitais em subníveis de spin permitiu obter a magnitude do fator g para estes estados. Mudando a orientação do campo magnético, foram observadas as anisotropias do tensor g e a sua relação com os detalhes do potencial de confinamento. Estas características permitiram inferir o tempo de relaxação T1.
A medida da polarização resolvida no tempo foi realizada através de es-pectroscopia óptica de bombeio-prova. Os pulsos de luz e o campo magnético transverso permitem que uma polarização líquida seja inicializada. A rotação de Kerr permitiu observar oscilações desta polarização em torno do campo magnético com freqüência determinada pelo fator g. A perda da coerência de fase do spin resulta no decaimento destas oscilações numa escala de tempo T2. Medidas realizadas num ensemble de spins implicam em que o tempo de decoerência encontra-se limitado pela escala de defasagem T¤2< T2. Uma técnica semelhante à refocalização por spin-eco em experimentos de ressonância magnética nuclear, foi aplicada utilizando pulsos de laser para reverter a defasagem do ensemble. Tanto a possibilidade de medir o sinal de eco como o tempo de decoerência foram medidos como função da temperatura.
A estrutura de níveis de exciton e a sua distribuição no ensemble foi estudada também com espectroscopia de bombeio-prova. Foram observados batimentos quânticos entre os níveis de estrutura fina do exciton para sis-temas 0D e 2D limitados pelo tempo de recombinação / Abstract: Experimental measurements were carried out to determine the scales of the relaxation and decoherence time for the electronic spin as quantum bit. The structure of the exciton states was investigated with the objective to serve as intermediate states in the spin manipulation. The system studied for the implementation of the quantum computation is an ensemble of self-assembled semiconductor quantum dots.
Two subjects serve as central axes of the three experiments developed in this thesis: the spin polarization and the Landé g-factor. In the first experiment, when including the effect of the thermal reservoir, the degree of spin polarization (populations for the up and down levels) was measured for layers s and p. The splitting of the orbital levels in spin sublevels allowed to get the magnitude of factor g for these states. Changing the orientation of the magnetic field, the g-tensor anisotropies and its relation with the details of the confinement potential had been observed. These characteristics had allowed to infer the relaxation time T1.
The time resolved polarization measurement was carried out by optical pump-probe spectroscopy. The pulses of light and the transverse magnetic field allow the initialization of a net polarization. The Kerr rotation allowed to observe oscillations of this polarization around the magnetic field with frequency determined for factor g. The loss of the spin phase coherence results in the decay of these oscillations in a time scale T2. Measurements carried out in an ensemble of spins imply that the decoherence time is limited by the ensemble dephasing time T¤2 < T2. A technique similar to the spin-echo refocalization in nuclear magnetic resonance experiments using laser pulses was applied to reverse the ensemble dephasing. The possibility to measure the echo signal and the decoherence time was measured as a function of the temperature.
The structure of exciton levels and its distribution in ensemble were also studied with pump-probe spectroscopy. Quantum beats were observed be-tween the fine structure exciton levels for 0D and 2D systems, yet limited by the recombination time / Doutorado / Física da Matéria Condensada / Doutor em Ciências
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Estudo de sistema micelares em misturas de água/acetonitrila / Studies micellar systems in mixtures of water/acetonitrileChang Yihwa 18 August 2000 (has links)
Neste trabalho, estudou-se o efeito da adição de acetonitrila nas propriedades de micelas do detergente aniônico, dodecil sulfato de sódio (SDS), e do detergente catiônico, cloreto de hexadeciltrimetilamônio (CTACl). Medidas de condutividade foram utilizadas para determinar a concentração micelar crítica, cmc, e o grau de dissociação, α, das micelas em função da fração molar de acetonitrila, XAc. Medidas de supressão de fluorescência, resolvida no tempo, com pireno como sonda, foram utilizadas para determinar a influência de acetonitrila no número de agregação das micelas, N, e na dinâmica de migração de solutos entre as fases aquosa e micelar. Em baixas frações molares XAc < 0,2), a acetonitrila insere-se nas cavidades da água, quebrando parcialmente as pontes de hidrogênio da água com a formação de novas pontes de hidrogênio entre as moléculas de acetonitrila e as moléculas de água. Nesta faixa de concentração, ocorre um aumento da cmc e do α, acompanhada de uma diminuição de N. Observa-se também alterações na dinâmica da interação de contra-íons e co-íons supressores na micela. Assim, as micelas de SDS e CTACl formadas em misturas acetonitrila-água são menores, mais dissociadas e apresentam maior fluidez interna. Ao redor de XAc = 0,2, as misturas de água-acetonitrila tornam-se microheterogêneos com o aparecimento de microdomínios ricos em acetonitrila e microdomínios ricos em água. A proporção das regiões ricas em acetonitrila aumenta com o aumento da fração molar de acetonitrila, com apenas pequenas modificações das propriedades dos dois tipos de microdomínios. Em XAc > 0,2 a variação de cmc e de α com a XAc passa a ser menos acentuada, sugerindo que o detergente forma agregados preferencialmente nas regiões mais aquosas; a sonda fluorescente pireno começa sair das micelas durante o tempo de vida do estado excitado; e há claras mudanças na dinâmica de incorporação de íons nos agregados. / This work presents a study of the effect of added acetonitrile on the properties of the micelles of the anionic detergent sodium dodecylsulfate (SDS) and the cationic detergent hexadecyltrimethylammonium chloride (CTACl). Conductimetric measurements were employed to determine the critical micelle concentration, cmc, and the degree of counterion dissociation, α, of the micelles as a function of the mole fraction of added acetonitrile, XAc. Time resolved fluorescence quenching measurements with pyrene as probe were employed to determine the effect of acetonitrile on the micellar aggregation number, N, and the dynamics of solute migration between the micellar and aqueous phases. At low mole fractions (XAc < 0.2), acetonitrile inserts into the cavities present in liquid water, partially disrupting the hydrogen bonding of water, with formation of new hydrogen bonds between water and acetonitrile. In this range, both the cmc and α increase, while N decreases. The dynamics of incorporation of counterionic and coionic quenchers into the micelles is also altered. Thus, the SDS and CTACl micelles formed in these acetonitrile-water mixtures are smaller, more highly dissociated and internally more fluid than those in aqueous solution. Above XAc of ca. 0,2, acetonitrile-water mixtures become microheterogeneous, the solution containing microdomains rich in acetonitrile and microdomains rich in water. The proportion of acetonitrile-rich microdomians increases with increasing XAc, with only small changes in the properties of the two types of microdomains. Correspondingly, at XAc > > ca. 0.2: the variation of the cmc and α with XAc is much less pronounced, suggesting that the detergent forms aggregates preferentially in the aqueous-rich domains; the fluorescence probe pyrene begins to exit the micelles during its excited state lifetime; and there are distinct changes in the rate constants for the incorporation of ions into the micelles.
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Efeito de interface nas propriedades ópticas de pontos quânticos de InP/GaAs / Interface effect on the optical properties of InP/GaAs quantum dotsGirardi, Tiago Illipronti, 1986- 21 August 2018 (has links)
Orientador: Fernando Iikawa / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-21T01:34:49Z (GMT). No. of bitstreams: 1
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Previous issue date: 2012 / Resumo: Neste trabalho, estudamos o efeito de diferentes condições de interface de InP/GaAs nas propriedades ópticas de pontos quânticos auto-organizados, crescidos por epitaxia de feixe químico, no modo Stranskii-Krastanov. Espera-se que os pontos quânticos de InP/GaAs apresentem alinhamento de bandas do tipo II, e somente os elétrons ficam confinados, enquanto os buracos ficam localizados nas camadas de GaAs em volta do ponto quântico, atraídos pelo elétron. No entanto, devido ao efeito de mistura de átomos nas interfaces o perfil de potencial nas interfaces pode ser alterado significativamente, afetando, com isso, as propriedades ópticas dos pontos quânticos. Foram estudadas amostras com as seguintes condições de interface entre a camada de InP e as camadas de GaAs: inclusão ou não de uma camada de InGaP em uma ou nas duas interfaces. O InGaP gera uma barreira para ambos os tipos de portadores de carga em uma junção tanto com o GaAs como InP e evita a difusa de As das camadas de GaAs para a de InP. Através de medidas de fotoluminescência resolvida no tempo, observamos a variação do tempo de decaimento da emissão óptica associada aos pontos quânticos de acordo com as diferentes condições de interface. Foi observado um tempo curto de decaimento em amostras sem a inclusão de InGaP e com a inclusão apenas na interface superior, enquanto foi observado um tempo longo quando incluímos camadas de InGaP em ambas as interfaces. O tempo de decaimento curto é incompatível com o alinhamento de bandas do tipo II, que deveria separar espacialmente o elétron do buraco. A partir desses resultados e estudos anteriores a esse trabalho, pudemos concluir que o tempo curto se deve à mistura de átomos nas regiões de ambas as interfaces, gerando ligas que localizam os portadores próximos um ao outro. O tempo longo na amostra contendo InGaP nas duas interfaces é atribuído à separação espacial do elétron e do buraco. O efeito de mistura de átomos nas interfaces, neste caso, não forma uma liga na interface que localize os dois tipos de portadores próximos um ao outro. Isso pode ser uma alternativa de preparação de pontos quânticos de InP/GaAs onde se mantém separados espacialmente o elétron e o buraco / Abstract: We studied the effect of different interface conditions on the optical properties of InP/GaAs self-assembled quantum dots grown by chemical beam epitaxy in the Stranskii-Krastanov mode. InP/GaAs quantum dots is expected to present type II band alignment, and only electrons are confined, whereas the holes are localized in the GaAs layers around the quantum dot, attracted by the electron. However, due to the atomic intermixing effect in the interface the potential profile can be strongly changed, affecting the optical properties of the quantum dots. We studied samples with the following conditions at the interfaces between the InP layer and GaAs layers: the inclusion, or the lack of, a InGaP layer at one of or both interfaces. InGaP generates a barrier for both types of carriers in a junction with GaAs and InP, and avoid the diffusion of As from the GaAs layers to the InP one. Using time-resolved photo-luminescence, we observed a change of the optical emission decay times associated to the quantum dots as the interface condition is changed. We observed a short decay lifetime in samples without InGaP layers and with the inclusion in the top interface only, whereas we observed a long decay time when we included InGaP layers in both interfaces. The short decay lifetime is incompatible with the type II band alignment, where the electron and the hole should be spatially separated. Using these and other previous results, we concluded that the short decay lifetime is due to the atomic intermixing in both interfaces regions, forming alloys that localize the carriers near each other. The long lifetime observed for sample containing InGaP in both interfaces is attributed to the large electron-hole spatial separation. In this case intermixing effects at the interfaces do not form a potential well to localize the carries near each other / Mestrado / Física / Mestre em Física
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Ultrafast photogeneration and photodetection of coherent acoustic phonons in ferroelectric BiFeO3 / Photogénération et Photodétection Ultrarapide de Phonons Acoustiques Cohérentes dans le Ferroélectrique BiFeO3Lejman, Mariusz 06 October 2015 (has links)
La technique d’optique ultra-rapide pompe-sonde, qui repose sur l’emploi de lasers à impulsion ultracourte(femtoseconde), permet de déclencher et étudier des processus ultrarapides dans la matière. L’acoustique picoseconde concerne pour sa part l’étude des processus de génération et détection de phonons acoustiques haute fréquence ainsi quel’analyse des nanomatériaux avec ces phonons (nanoéchographie). Les travaux de recherche de cette thèse avaient pourbut l’étude des couplages électronphonon acoustique dans le matériau ferroélectrique BiFeO3 par acoustique ultrarapide. Nous avons pu mettre en évidence que selon l’orientation du cristal photoexcité, l’émission des phonons acoustiques cohérents longitudinaux (LA) et transverses (TA) pouvait être modulée. De manière spectaculaire, nous avons purévéler un couplage électron-phonon acoustique transverse très efficace comme cela n’avait jamais été observé jusqu’alors dans les métaux, semiconducteurs ou nanostructures artificielles. Une étude détaillée indique que le mécanismepiézoélectrique inverse semble être le moteur de ce couplage électron-phonon (Lejman et al, Nature Communications, 2014). Dans une seconde partie, nous avons montré que BFO, ainsi qu’un autre ferroélectrique biréfringent LiNbO3 (LNO), peuvent être utilisés pour la conversion de mode ultra-rapide par processus acousto-optique (manipulation de la polarisation de la lumière à l’échelle de la picoseconde avec des phonons acoustiques). Cet effet, jamais mis enévidence jusqu’alors dans le domaine GHz, pourrait potentiellement être exploité dans de nouveaux dispositifs photoniques/phononiques pour des modulations acousto-optiques à haute cadence. / Ultrafast optical pump-probe technique, by exploiting ultrashort laser pulses (femtosecond), allows to initiate and monitor ultrafast processes in matter. Picosecond acoustics is a research field that focuses on the generation and detection mechanisms of high frequency coherent acoustic phonons in different media, as well as on their application in testing of nanomaterials and nanostructures. This PhDs research project was devoted to study of electron-acoustic phonon coupling in ferroelectric BiFeO3 (bismuth ferrite, BFO) by ultrafast acoustics. We have evidenced that depending on the BFO crystal orientation it was possible to tune the coherent phonons spectrum with in particular variable amplitude of longitudinal (LA) and transverse (TA) acoustic modes. In some grains with particular crystallographic orientations much stronger TA than LA signal was observed. Spectacularly, we have revealed an efficient coupling between electron and transverse acousticphonon. Such high ratio never reported before in any metal, semiconductor or nanostructure before, can be principally attributed to the photoinduced inverse piezoelectric effect (Lejman et al Nature Communications 2014). In a second part, we have shown that BFO as well as another birefringent ferroelectric LiNbO3 (LNO) can be used for ultrafast acousto-optic modeconversion (manipulation of light polarization at the picosecond time scale with coherent acoustic phonons). This effect, never reported at GHz up to now, can be potentially applied in photonics for ultrafast manipulation of light polarization bycoherent acoustic phonons in next generation photonic/phononic devices.
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