Kohlenstoffnanoröhrchen (engl. carbon nanotube, CNT) sind vielversprechende Kandidaten für den Ersatz von Kupferleitbahnen die bei weiterer Strukturverkleinerung von integrierten Schaltkreisen notwendig wird. In dieser Arbeit wird mit Hilfe von ab-initio Simulationen auf Basis der Dichtefunktionaltheorie die elektronische Struktur von halbleitenden CNTs beispielhaft anhand des (8,4)-CNTs untersucht. Nach Besetzung des CNT mit Metallatomen, hier Kobalt, zeigen sich massive Änderungen der Bandstruktur. Es reichen bereits überraschend kleine Mengen des Metalls aus, um einen starken Effekt zu erreichen. Die Änderungen der elektronischen Struktur sind stark abhängig von der genauen Position der Metallatome relativ zum Kohlenstoffgerüst der CNTs, der Einfluss der mechanischen Verformung des CNTs als Reaktion auf die Anlagerung ist hingegen sehr gering. Die relevanten Bänder der Kobaltatome liegen leicht unterhalt der Fermi-Energie und sorgen bei der Integration in die Bandstruktur des CNTs für die Schließung der Bandlücke und somit für die Transformation eines vorher halbleitenden CNTs in ein leitendes. Diese Transformation konnte auch mit Simulationsrechnungen zum Elektronentransport bestätigt werden. Ferner wurden bei weiteren Rechnungen eine ausgeprägte Spinabhängigkeit der Bandstruktur ermittelt, welche noch weiterer Untersuchung bedarf.

Since the rediscovery of carbon nanotubes (CNTs) due to the publication of Sumio Iijima's article Helical microtubules of graphitic carbon in the magazine Nature in 1991 the interest in carbon nanotubes has rapidly increased. This bachelor thesis also deals with this popular material with the aim to functionalize CNTs for further uses in the microelectronic industry. A promising approach is the functionalization of the CNTs with metal nanoparticles or metal films. To achieve this, one can perform an atomic layer deposition (ALD) on CNTs. In the present work the Trimethylaluminum (TMA) ALD is the chosen process for the functionalization of the CNTs, which will be studied here. Since the available knowledge on the CNT-functionalization by gas phase reactions is very limited, a theoretical study of possible reaction pathways is necessary. Those studies are carried out with two modern quantumchemical programs, Turbomole and DMol³, which are described together with an introduction into Density Functional Theory, as well as an introduction of CNTs and the ALD process. A basic model of a CNT with a Single Vacancy defect, which had been selected according to the demands of the studies, is introduced. Because the TMA ALD process requires hydroxyl groups as its starting point, not only is the performance of a TMA ALD cycle on a CNT studied, but also reactions which result in the CNTs owning of hydroxyl groups. Consequently, this bachelor thesis will focus on two di erent aspects: The performance of one TMA ALD cycle and the study of possible educts for the TMA ALD process. This study of the educts includes possible structures which can be formed when a CNT comes into contact with air.:Abstract 1. Introduction 2. Carbon Nanotubes and the Atomic Layer Deposition 2.1. Carbon Nanotubes 2.1.1. Graphene and Its Relation to Carbon Nanotubes 2.1.2. Classi cations 2.1.3. Defects 2.2. Atomic Layer Deposition 2.2.1. Introduction to Atomic Layer Deposition 2.2.2. Trimethylaluminum Atomic Layer Deposition 3. Theoretical Background 3.1. The Schrödinger Equation and the Variational Principle 3.2. Electron Density 3.2.1. The Wave Function 3.2.2. The Electron Density 3.3. The Hohenberg-Kohn Theorems 3.3.1. The First Hohenberg-Kohn Theorem 3.3.2. The Second Hohenberg-Kohn Theorem 3.4. The Kohn-Sham Approach 4. Computational Details and the Model System 4.1. Model System 4.1.1. The Basic (5; 5)-CNT 4.1.2. Further Adjustments to the Basic (5; 5)-CNT 4.2. Computational Details 4.2.1. Materials Studio/Dmol³ 4.2.2. Turbomole 5. Results and Discussion 5.1. Educt Formation Reactions 5.1.1. Educts with Two Oxygen Atoms 5.1.2. Educts with Two Hydroxyl Groups and One Oxygen Atom 5.1.3. Educts with Two Hydroxyl Groups and Two Hydrogen Atoms 5.1.4. Educts with Four Hydroxyl Groups 5.1.5. Educts with Peroxy Groups 5.1.6. Summary - Educts 5.2. Performance of the First Trimethylaluminum Atomic Layer Deposition Cycle 5.2.1. The First Trimethylaluminum Atomic Layer Deposition Half Cycle 5.2.2. The Second Trimethylaluminum Atomic Layer Deposition Half Cycle 6. Summary and Outlook A. Appendix A.1. Note on the Multiplicity A.2. Note on the Computation Time A.3. Comparison between Dmol³ and Turbomole A.4. Tables of Energies for the Studied Educts in 5.1 A.5. Tables of Energies for the Study of the Trimethylaluminum Atomic Layer Deposition Cycle in 5.2 Bibliography Acknowledgment

Im Rahmen der vorliegenden Arbeit wird eine Tight-Binding-Formulierung der Korringa-Kohn-Rostoker-Greenschen-Funktionsmethode vorgestellt. Dabei werden mittels eines geeignet gewählten Referenzsystems abgeschirmte Strukturkonstanten konstruiert. Es werden die Vorteile und Grenzen dieser Transformation des Formalismus diskutiert. Es wird gezeigt, daß der numerische Aufwand zur erechnung der Elektronenstruktur von Systemen mit langgestreckter Elementarzelle linear mit der Systemgröße wächst. Damit ist eine Behandlung von Systemen mit 500 und mehr Atomen pro Elementarzelle möglich. Anhand von umfangreichen Testrechnungen kann demonstriert werden, daß das neue Verfahren bezüglich seiner Genauigkeit mit dem traditionellen KKR-Verfahren vergleichbar ist. Es werden Anwendungen zur Berechnung der Elektronenstruktur sowie zur Zwischenlagenaustauschkopplung von Co/Cu(100)-Vielfachschichten vorgestellt. / A newly developed ab initio tight-binding-formulation of the Korringa-Kohn-Rostoker-Green's function method for layered systems is presented. Screened structure constants are calculated by means of a repulsive reference system. Advantages and limits of this transformation of the formalism are discussed in detail. The numerical effort for self consistent electronic structure calculations of systems with a large prolonged supercell scales linearly with the system size. Systems with up to 500 atoms per unit cell can be treated easily. The accuracy of the new method is of the same order as the traditional KKR method. Applications to electronic structure calculations and magnetic interlayer exchange coupling in Co/Cu(100) multilayers are presented.

Die besonderen Eigenschaften von Graphen ermöglichen das Design von elektronischen Bauteilen im Nanometerbereich. Graphen kann auf der Oberfläche von Siliziumkarbonat (SiC) durch das Ausdampfen von Si epitaktisch gewachsen werden. Ein detailliertes Verständnis der atomaren und elektronischen Struktur der Grenzschicht zwischen Graphen und SiC ist ein wichtiger Schritt um die Wachstumsqualität zu verbessern. Wir nutzen Dichtefunktionaltheorie um das Hybridsystem Graphen-SiC auf atomarer Ebene zu beschreiben. Experimentelle Arbeiten auf der Si Seite von SiC haben gezeigt, dass die Grenzschicht (ZLG) durch eine teilweise kovalent gebundene Kohlenstofflage wächst; darüber bildet sich die erste Graphenlage (MLG). Durch das Konstruieren eines ab initio Oberflächenphasendiagrams zeigen wir, dass sowohl ZLG als auch MLG Gleichgewichtsphasen sind. Unsere Ergebnisse implizieren, dass Temperatur- und Druckbedingungen für den selbstbegrenzenden Graphenwachstum existieren. Wir zeigen, dass sich das Doping und die Riffellung von epitaktischem Graphene durch H-Interkalation reduzieren. Im Experiment unterscheidet sich das Graphenwachstum auf der C Seite qualitativ von der Si Seite. Zu Beginn des Graphenwachstums wird eine Mischung verschiedener Oberflächenphasen beobachtet. Wir diskutieren die Stabilität dieser konkurierenden Phasen. Die atomaren Strukturen von einigen dieser Phasen, inklusive der Graphen-SiC Grenzschicht, sind nicht bekannt wodurch die theoretische Beschreibung erschwert wird. Wir präsentieren ein neues Model für die bisher unbekannte (3x3) Rekonstruktion, das Si Twist Model. Die Oberflächenenergie vom Si Twist Model und von der bekannten (2x2)c Phase schneiden sich direkt an der Grenze zur Graphitbildung. Dies erklärt die experimentell beobachtete Phasenkoexistenz zu Beginn des Graphenwachstums. Wir schlussfolgern, dass auf der C Seite der kontrollierte Graphenewachstum durch Si-reiche Oberflächenphasen blockiert wird. / Graphene with its unique properties spurred the design of nanoscale electronic devices. Graphene films grown by Si sublimation on SiC surfaces are promising material combinations for graphene applications. Understanding the atomic and electronic structure of the SiC-graphene interface, is an important step to refine the growth quality. In this work, density-functional theory is used to simulate the SiC-graphene interface on an atomistic level without empirical parameters. Experimental work has shown that on the Si face of SiC, a partially covalently bonded carbon layer, the zero-layer graphene (ZLG), grows. On top of the ZLG layer forms mono-layer graphene (MLG) as large ordered areas and then few-layer graphene. By constructing an ab initio surface phase diagram, we show that ZLG and MLG are at least near equilibrium phases. Our results imply the existence of temperature and pressure conditions for self-limiting growth of MLG key to the large-scale graphene production. H intercalation significantly reduces both the corrugation and the graphene doping. Our calculations demonstrate that unsaturated Si atoms in the ZLG influence the electronic structure of graphene. The situation on the C face of SiC is very different. The experimental growth of large areas of graphene with well defined layer thickness is difficult. At the onset of graphene formation a phase mixture of different surface phases is observed. We will address the stability of the different occuring surface phases. However, the atomic structure of some of the competing surface phases, as well as of the SiC-graphene interface, is unknown. We present a new model for the (3x3) reconstruction, the Si twist model. The surface energies of this Si twist model, the known (2x2)c adatom phase, and a graphene covered (2x2)c phase cross at the chemical potential limit of graphite, which explains the observed phase mixture. We argue that well-controlled graphene formation is hindered by Si-rich surface phases.

In this thesis, the implementation of the incremental scheme for open-shell systems with unrestricted Hartree-Fock reference wave functions is described. The implemented scheme is tested within robustness and performance with respect to the accuracy in the energy and the computation times. New approaches are discussed to implement a fully automated incremental scheme in combination with the domain-specific basis set approximation. The alpha Domain Partitioning and Template Equalization are presented to handle unrestricted wave functions for the local correlation treatment. Both orbital schemes are analyzed with a test set of structures and reactions. As a further goal, the DSBSenv orbital basis sets and auxiliary basis sets are optimized to be used as environmental basis in the domain-specific basis set approach. The performance with respect to the accuracy and computation times is analyzed with a test set of structures and reactions. In another project, a scheme for the optimization of auxiliary basis sets for uranium is presented. This scheme was used to optimize the MP2Fit auxiliary basis sets for uranium. These auxiliary basis enable density fitting in quantum chemical methods and the application of the incremental scheme for systems containing uranium. Another project was the systematical analysis of the binding energies of four water dodecamers. The incremental scheme in combination with the CCSD(T) and CCSD(T)(F12*) method were used to calculate benchmark energies for these large clusters.

<p>Combination of the Calphad method and theoretical calculations provides new possibilities for the study of materials science. This work is a part of the efforts within the CCT project (Centre of Computational Thermodynamics) to combine these methods to facilitate modeling and to extend the thermodynamic databases with critically assessed volume data. In this work, the theoretical calculations refer to first-principles and Debye-Grüneisen calculations. The first-principles (i.e. ab initio) electronic structure calculations, based on the Density- Functional Theory (DFT), are capable of predicting various physical properties at 0 K, such as formation energy, volume and bulk modulus. The ab initio simulation software, VASP, was used to calculate the binding curves (i.e. equation of state at 0 K) of metallic elements, cubic carbides and nitrides. From the binding curves, the equilibrium volumes at 0 K were calculated for several metastable structures as well as stable structures. The vibrational contribution to the free energy was calculated using the Debye-Grüneisen model combined with first-principles calculations. Two different approximations for the Grüneisen parameter, γ, were used in the Debye-Grüneisen model, i.e. Slater’s and Dugdale-MacDonald’s expressions. The thermal electronic contribution was evaluated from the calculated electronic density of states. The calculated thermal expansivities for metallic elements, cubic carbides and nitrides were compared with Calphad assessments. It was found that the experimental data are within the limits of the calculations using the two approximations for γ. By fitting experimental heat capacity and thermal expansivity around Debye temperatures, we obtained optimal Poisson’s ratio values and used them to evaluate Young’s and Shear moduli. In order to reach a reasonable agreement with the experiments, it is necessary to use the logarithmic averaged mass of the constitutional atoms. The agreements between the calculations and experiments are generally better for bulk modulus and Young’s modulus than that for shear modulus. A new model describing thermodynamic properties at high pressures was implemented in Thermo-Calc. The model is based on an empirical relation between volume and isothermal bulk modulus. Pure Fe and solid MgO were assessed using this model. Solution phases will be considered in a future work to check the model for compositional dependence.</p>

Environ 3% des antiprotons (p) stoppés dans l'heliurn survivent plusieurs microsecondes contre quelques picosecondes dans tout autre matériau. Cette métastabilité inhabituelle résulte d'une capture sur des états liés de l'atome exotique pHe+, dénommé atomcule car il s'apparente à la fois à un atome de Rydberg quasi-circulaire quasi-classique de grand moment angulaire l ~ n - 1 ~ 37 et à une molécule diatomique composée d'un noyau chargé négativement et caractérisée par une forte excitation rotationnelle J = l. En dehors de cette structure duale originale accessible par spectroscopie laser, la physico-chimie de leur interaction avec d'autres atomes ou molécules a fait l'objet de mesures résolues en état. Alors que les atomcules résistent à des millions de collisions dans l'helium pur, des contaminants moléculaires comme H2 les détruisent immédiatement, même à basse température. Dans le cadre Born-Oppenheimer, nous interprétons l'interaction moléculaire, calculée par des techniques de chimie quantique ab initio, en termes de chemins réactifs classiques, qui présentent des barrières d'activation compatibles avec celles mesurées pour He et H2. Nous montrons par une approche Monte Carlo de trajectoires classiques que la thermalisation détruit fortement les populations initiales, portant la fraction estimée des états de capture à 3 %. Nous étudions aussi la recombinaison dissociative pHé + é + e- dans une approche de trajectoires classiques pour les noyaux: nous prédisons la synthèse d'antihydrogène avec un rapport de branchement de 10 %, ainsi qu'une nouvelle classe d'atomcules métastables (alpha, p, e+, 2e-), qui pourrait être confirmée par spectroscopie. Ce travail illustre la transférabilité des concepts de chimie physique à l'étude de processus exotiques en présence d'antimatière, et apporte un éclairage nouveau sur la physico-chimie des radicaux interstellaires froids.

Ce travail contribue à mieux connaître et contraindre la minéralogie du plomb. L'incorporation du plomb dans des minéraux du manteau terrestre a été étudiée ; on observe que deux phases importantes du globe sont des candidates pour accueillir le plomb : la phase CAS dans les plaques en subduction et la phase pérovskite CaSiO3 troisième minéral majeur du manteau inférieur. D'autres minéraux du manteau supérieur ont été également étudiés pour une incorporation du plomb. Des calculs ab-initio ont été réalisés sur un composé simple de plomb, PbO2. Ces calculs permettent de mettre en évidence l'évolution de PbO2 à hautes pressions jusqu'à 130 GPa. La spéciation du plomb dans des minéraux naturels métamictes a aussi été explorée : cette étude de l'élément fils des éléments radioactifs U et Th, dans ces minéraux naturels permet de mieux contraindre l'immobilisation durable des déchets nucléaires

The electronic structure of the zero-gap two-dimensional graphene has a charge neutrality point exactly at the Fermi level that limits the practical application of this material. There are several ways to modify the Fermi-level-region of graphene, e.g. adsorption of graphene on different substrates or different molecules on its surface. In all cases the so-called dispersion or van der Waals interactions can play a crucial role in the mechanism, which describes the modification of electronic structure of graphene. The adsorption of water on graphene is not very accurately reproduced in the standard density functional theory (DFT) calculations and highly-accurate quantum-chemical treatments are required. A possibility to apply wavefunction-based methods to extended systems is the use of local correlation schemes. The adsorption energies obtained in the present work by means of CCSD(T) are much higher in magnitude than the values calculated with standard DFT functional although they agree that physisorption is observed. The obtained results are compared with the values available in the literature for binding of water on the graphene-like substrates. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

In this thesis a reduced dimensionality quantum scattering model is applied to the study of polyatomic reactions of type X + CH4 <--> XH + CH3. Two dimensional quantum scattering of the symmetric hydrogen exchange reaction CH3+CH4 <--> CH4+CH3 is performed on an 18-parameter double-Morse analytical function derived from ab initio calculations at the CCSD(T)/cc-pVTZ//MP2/cc-pVTZ level of theory. Spectator mode motion is approximately treated via inclusion of curvilinear or rectilinear projected zero-point energies in the potential surface. The close-coupled equations are solved using R-matrix propagation. The state-to-state probabilities and integral and differential cross sections show the reaction to be primarily vibrationally adiabatic and backwards scattered. Quantum properties such as heavy-light-heavy oscillating reactivity and resonance features significantly influence the reaction dynamics. Deuterium substitution at the primary site is the dominant kinetic isotope effect. Thermal rate constants are in excellent agreement with experiment. The method is also applied to the study of electronically nonadiabatic transitions in the CH3 + HCl <--> CH4 + Cl(2PJ) reaction. Electrovibrational basis sets are used to construct the close-coupled equations, which are solved via Rmatrix propagation using a system of three potential energy surfaces coupled by spin-orbit interaction. Ground and excited electronic surfaces are developed using a 29-parameter double-Morse function with ab initio data at the CCSD(T)/ccpV( Q+d)Z-dk//MP2/cc-pV(T+d)Z-dk level of theory, and with basis set extrapolated data, both corrected via curvilinear projected spectator zero-point energies. Coupling surfaces are developed by fitting MCSCF/cc-pV(T+d)Z-dk ab initio spin orbit constants to 8-parameter functions. Scattering calculations are performed for the ground adiabatic and coupled surface models, and reaction probabilities, thermal rate constants and integral and differential cross sections are presented. Thermal rate constants on the basis set extrapolated surface are in excellent agreement with experiment. Characterisation of electronically nonadiabatic nonreactive and reactive transitions indicate the close correlation between vibrational excitation and nonadiabatic transition. A model for comparing the nonadiabatic cross section branching ratio to experiment is discussed.