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Diese Arbeit präsentiert Untersuchungen zum Wachstum von GaAs Nanodrähten (NWs) und (In,Ga)As Hüllen mittels Molekularstrahlepitaxie (MBE) mit sekundärem Fokus auf den optischen Eigenschaften solcher Kern-Hülle Strukturen. Das ortsselektive Wachstum von GaAs NWs auf mit Oxidmasken beschichteten Si Substraten wird untersucht, wobei der entscheidende Einfluss der Oberflächenpreparation auf die vertikale Ausbeute von NW Feldern aufgedeckt wird. Basierend auf diesen Ergebnissen wird ein zweistufiger Wachstumprozess präsentiert der es ermöglicht NWs mit dünner und gerade Morphologie zu erhalten ohne die vertikale Ausbeute zu verringern. Für die detaillierte Beschreibung der NW Form wird ein Wachstumsmo- dell entwickelt, das die Einflüsse der Veränderung der Tropfen Größe während des Wachstums sowie direktes des Wachstums auf den NW Seitenwänden umfassend beschreibt. Dieses Wachstumsmodell wird benutzt für die Vorhersage der NW Form über einen großen Parameterraum um geeignete Bedingungen für die Realisierung von erwünschten NW Formen und Dimensionen zu finden. Ausgehend von diesen NW Feldern werden die optimalen Parameter für das Wachstum von (In,Ga)As Hüllen untersucht und wir zeigen, dass die Anordnung der Materialquellen im MBE System die Materialqualität entscheidend beeinflusst. Die dreidimensionale Struktur der NWs in Kombination mit der Substratrotation und der Richtungsabhängigkeit der Materialflüsse in MBE resultieren in unterschiedlichen Flusssequenzen auf der NW Seitenfacette welche die Wachstumsdynamik und infolgedessen die Punktde- fektdichte bestimmen. An Proben mit optimaler (In,Ga)As Hülle und äußerer GaAs Hülle zeigen wir, dass thermionische Emission mit anschließender nichtstrahlender Rekombination auf der Oberfläche zu einem starken thermischen Verlöschen der Lumineszenz Intensität führt, welches durch das Hinzufügen einer AlAs Barrierenhülle zur äußeren Hüllenstruktur erfolgreich unterdrückt werden kann. Abschließend wird ein Prozess präsentiert der das ex-situ Tempern von NWs bei hohen Temperaturen ermöglicht, was in der Reduzierung von Inhomogenitäten in den (In,Ga)As Hüllenquantentöpfen führt und in beispiellosen optischen Eigenschaften resultiert. / This thesis presents an investigation of the growth of GaAs nanowires (NWs) and (In,Ga)As shells by molecular beam epitaxy (MBE) with a second focus on the optical properties of these core-shell structures. The selective-area growth of GaAs NWs on Si substrates covered by an oxide mask is investigated, revealing the crucial impact of the surface preparation on the vertical yield of NW arrays. Based on these results, a two-step growth approach is presented that enables the growth of thin and untapered NWs while maintaining the high vertical yield. For a detailed quantitative description of the NW shape evolution, a growth model is derived that comprehensively describes the NW shape resulting from changes of the droplet size during elongation and direct vapour-solid growth on the NW sidewalls. This growth model is used to predict the NW shape over a large parameter space to find suitable conditions for the realization of desired NW shapes and dimensions. Using these GaAs NW arrays as templates, the optimum parameters for the growth of (In,Ga)As shells are investigated and we show that the locations of the sources in the MBE system crucially affect the material quality. Here, the three-dimensional structure of the NWs in combination with the substrate rotation and the directionality of material fluxes in MBE results in different flux sequences on the NW sidefacets that determine the growth dynamics and hence, the point defect density. For GaAs NWs with optimum (In,Ga)As shell and outer GaAs shell, we demonstrate that thermionic emission with successive nonradiative recombination at the surface leads to a strong thermal quenching of the luminescence intensity, which is succesfully suppressed by the addition of an AlAs barrier shell to the outer shell structure. Finally, a process is presented that enables the ex-situ annealing of NWs at high temperatures resulting in the reduction of alloy inhomogeneities in the (In,Ga)As shell quantum wells and small emission linewidths.

Carrier, spin, charge current, and spin current injection by one- and two-color optical schemes are investigated within 30-band k·p theory. Parameters of the band model are optimized to give full-Brillouin zone band structures for GaAs and Ge that give accurate Γ-point effective masses and gyromagnetic factors and give access to the L valley, and to the E₁ and E₁+Δ₁ critical points in the linear optical absorption. Calculations of one- and two-photon carrier and spin injection and two-color current injection are performed for excitation energies in the range of 0—4 eV in GaAs and 0—3.5 eV in Ge. Significant spin and spin current injection occurs with 30% spin polarization in GaAs and Ge at photon energy matching the E₁ critical point. Further, the anisotropy and disparity of the current injection between parallel and perpendicular linearly-polarized beam configurations are calculated. For light propagating along a <111> crystal axis, anisotropic contributions in coherent current control and two-photon spin injection give rise to normal current components and in-plane spin components. In Ge, contributions from the holes to spin, electrical current, and spin current injection are investigated. Optical orientation results in 83% spin-polarized holes at the band edge. The effects of carrier dynamics in Ge are treated within a rate-equation model. The detection of spin dynamics in a pump-probe setup is considered, and the Fermi-factor approach is justified for electrons but not for holes. Carrier and current injection are further investigated in single-layer and bilayer graphene within the tight-binding model. In single-layer graphene, the linear-circular dichroism in two-photon absorption yields an absorption coefficient that is twice as large for circularly polarized light compared to linearly polarized light. Coherent current injection is largest for co-circularly polarized beams and zero for cross-circularly polarized beams. For linearly polarized beams, the magnitude of the injected current is independent of beam polarizations. In contrast, the injected current in bilayer graphene shows disparity between parallel and perpendicular configurations of the beams. The resulting angular dependence of the current is a macroscopic, measurable consequence of interlayer coupling in the bilayer.

Carrier, spin, charge current, and spin current injection by one- and two-color optical schemes are investigated within 30-band k·p theory. Parameters of the band model are optimized to give full-Brillouin zone band structures for GaAs and Ge that give accurate Γ-point effective masses and gyromagnetic factors and give access to the L valley, and to the E₁ and E₁+Δ₁ critical points in the linear optical absorption. Calculations of one- and two-photon carrier and spin injection and two-color current injection are performed for excitation energies in the range of 0—4 eV in GaAs and 0—3.5 eV in Ge. Significant spin and spin current injection occurs with 30% spin polarization in GaAs and Ge at photon energy matching the E₁ critical point. Further, the anisotropy and disparity of the current injection between parallel and perpendicular linearly-polarized beam configurations are calculated. For light propagating along a <111> crystal axis, anisotropic contributions in coherent current control and two-photon spin injection give rise to normal current components and in-plane spin components. In Ge, contributions from the holes to spin, electrical current, and spin current injection are investigated. Optical orientation results in 83% spin-polarized holes at the band edge. The effects of carrier dynamics in Ge are treated within a rate-equation model. The detection of spin dynamics in a pump-probe setup is considered, and the Fermi-factor approach is justified for electrons but not for holes. Carrier and current injection are further investigated in single-layer and bilayer graphene within the tight-binding model. In single-layer graphene, the linear-circular dichroism in two-photon absorption yields an absorption coefficient that is twice as large for circularly polarized light compared to linearly polarized light. Coherent current injection is largest for co-circularly polarized beams and zero for cross-circularly polarized beams. For linearly polarized beams, the magnitude of the injected current is independent of beam polarizations. In contrast, the injected current in bilayer graphene shows disparity between parallel and perpendicular configurations of the beams. The resulting angular dependence of the current is a macroscopic, measurable consequence of interlayer coupling in the bilayer.

Cette thèse se concentre sur la contrôlabilité de l'indice de réfraction au niveau sub-micronique par changements d'indice induits par laser sur de longues dimensions i.e., avec des hauts rapports d'aspect élevés et des sections à l'échelle nanométrique. À cette fin, nous explorons les faisceaux ultracourts de Bessel non-diffractifs d'ordre zéro et les facteurs qui contribuent au confinement de l'énergie au-delà de la limite de diffraction. Le traitement par laser de matériaux transparents à l'aide de faisceaux non diffractifs offre un avantage important pour les structures sub-microniques en volume de haut rapport d'aspect à des fins applicatives en nanophotonique et en nanofluidique. Nous présentons l'effet de différentes conditions de focalisation et de paramètres laser sur la modification de la silice fondue, explorant ainsi les différents régimes d'interaction. Cette thèse aborde essentiellement des conditions modérées de focalisation car elles offrent un régime d'interaction stable sur une large gamme de paramètres laser, permettant l'ingénierie de la dispersion. La durée de l'impulsion laser s'est révélée être essentielle dans la définition du type de modification de l'indice de réfraction ou de modification structurale. Par exemple, l'usinage utilisant des impulsions laser femtosecondes entraîne une augmentation des structures d'indice de réfraction alors que les impulsions laser picosecondes engendrent une cavité uniforme i.e., des structures de faible indice. Pour acquérir un meilleur contrôle et une meilleure précision du dépôt d'énergie laser, un ensemble de mécanismes physiques responsables des dommages induits par laser dans des conditions d'excitation non-diffractives a été observé expérimentalement et examiné par des simulations indiquant le rôle essentiel de la diffusion de la lumière sur les électrons. Des mesures de microscopie pompe-sonde résolues en temps avec une résolution temporelle sub-picoseconde et spatiale sub-micronique donnent accès à l'excitation et à la relaxation dynamique instantanées. La transmission optique dynamique et le contraste de phase offrent des informations complémentaires sur la réponse électronique ou sur celle de la matrice vitreuse. La dynamique ultrarapide des porteurs libres a été particulièrement étudiée puisque le transfert d'énergie des électrons vers le réseau est la clé de transformation ultérieure du matériau. Le rôle de l'excitation instantanée pour différentes durées et énergie d'impulsion laser est exposé. Ainsi, la dynamique complète des porteurs de charge est présentée pour différents paramètres du laser. En particulier, la dynamique d'obtention de structures d'indice de réfraction positif et des cavités uniformes indique deux chemins différents de relaxation électronique et de dépôt de l'énergie: une relaxation rapide par l'intermédiaire de défauts pour les structures d'indice positif et une relaxation thermomécanique lente pour les cavités nanométriques. Enfin, en corrélant les résultats des études résolues en temps, les simulations et les résultats de photoluminescence après irradiation, nous formulons des scénarios potentiels de formation de l'indice de réfraction positif ainsi que des structures d'indice faible ou de vides uniformes / This thesis is focused on the controllability of laser-induced refractive index changes at sub-micron level over long dimensions i.e., with high aspect ratios and sections on the nanoscale. To this end, we explore non-diffractive zerothorder ultrafast Bessel beams and factors contributing to energy confinement beyond the diffraction limit. Laser processing of transparent materials using non-diffracting beams offers a strong advantage for high aspect ratio submicron structures inside the bulk in view of nanophotonics and nanouidics applications. We present the role of various focusing conditions and laser parameters on material modification in bulk fused silica and explore the different interaction regimes. This thesis tackles mostly the moderate focusing conditions as they offer a stable interaction regime backed up dispersion engineering over a large range of laser parameters. The laser pulse duration was found to be key in defining the type of laser induced refractive index or structural modification. For instance, machining using femtosecond laser pulses results in increased refractive index structures whereas picosecond laser pulses result in uniform void i.e., low index structures. To acquire better control over the laser energy deposition and precision, a range of physical mechanisms responsible for the laser induced damage in non-diffractive excitation conditions have been observed experimentally and further interrogated by simulations indicating a critical role of light scattering on carriers. Time-resolved pump-probe microscopy measurements with a sub-picosecond temporal and sub-micron spatial resolution allow access to the instantaneous excitation and relaxation dynamics. Dynamic optical transmission and phase contrast o_er complementary information of either electronic and glass matrix response. Primarily, ultrafast dynamics of free carriers was studied as the electron mediated energy transfer to the lattice is key to the subsequent material transformation. Role of instantaneous excitation at different laser pulse durations and energies is outlined. Then complete carrier dynamics is presented at different laser parameters. Particularly dynamics in conditions of positive refractive index structures and uniform voids is indicating two different paths of electronic relaxation and energy deposition: a fast defect mediated relaxation for positive index structures and slow thermomechanical relaxation for nanosize void structures. Finally, by correlating the results of time resolved studies, simulations and post-irradiated photoluminescence results, we formulate potential formation scenarios for the positive refractive index and low index or uniform void structures

<p>Plasmonics with the capability to harness electromagnetic waves at a nanoscale can be utilized for multitude of applications in ultra-compact miniature optical devices. Plasmonic metasurfaces which are artificially designed sub-wavelength structures have gained unprecedented interest in being able to engineer and effectively modulate the amplitude and phase of the incident wave. Introducing randomness to such plasmonic metasurfaces can also advance possibilities for extraordinary wave manipulation. Hence, by exploiting the plasmonic response of the ordered and disordered metasurfaces, we can design high performance devices for nanoscale optics.</p> <p>Aiming to provide a holistic solution to the current device limitations and bio-compatibility, my research focuses on non-toxic and environment-friendly coloration using plasmonic disordered metasurfaces. These structures generate a broad range of long-lasting colors in reflection that can be applied to real-life artistic or technological applications with a spatial resolution on the order of 0.3 mm or less. Moreover, my research also deals with the possibility of even concentrating energy in the smallest phase-space volume in optics in the form of coherent radiation through designing nanolasers. The study of carrier dynamics and photophysics of the gain media can be extremely beneficial towards the practicability of these lasers. This work elucidates the evolution of different competing mechanisms for coherent lasing. The dynamic study and experimental demonstration of these devices and respective materials can therefore provide a novel aspect to fundamental and applied research.</p>

This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within the inorganic semiconductors. Inorganic semiconductor nanowires and their blends with semiconducting polymers have been investigated using state-of-the-art ultrafast optical techniques to provide information on the sub-picosecond to nanosecond photoexcitation dynamics in these systems. Chapters 1 and 2 introduce the theory and background behind the work and present a literature review of previous work utilising nanowires in hybrid organic photovoltaic devices, revealing the performances to date. The experimental methods used during the thesis are detailed in Chapter 3. Chapter 4 describes the crucial roles of surface passivation on the ultrafast dynamics of exciton formation in gallium arsenide (GaAs) nanowires. By passivating the surface states of nanowires, exciton formation via the bimolecular conversion of electron-hole plasma can observed over few hundred picoseconds, in-contrast to the fast carrier trapping in 10 ps observed in the uncoated nanowires. Chapter 5 presents a novel method to passivate the surface-states of GaAs nanowires using semiconducting polymer. The carrier lifetime in the nanowires can be strongly enhanced when the ionization potential of the overcoated semiconducting polymer is smaller than the work function of the nanowires and the surface native oxide layers of nanowires are removed. Finally, Chapter 6 shows that the carrier cooling in the type-II wurtzite-zincblend InP nanowires is reduced by order-of magnitude during the spatial charge-transfer across the type-II heterojunction. The works decribed in this thesis reveals the crucial role of surface-states and bulk defects on the carrier dynamics of semiconductor nanowires. In-addition, a novel approach to passivate the surface defect states of nanowires using semiconducting polymers was developed.

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