Radio wave absorbing materials (RAM) are commonly found amongst high-tech products such as LCD electronic devices, laptop and desktop computers. Electromagnetic wave absorbing materials are composed of dielectric materials mixed with ferrite, a magnetic material, with varying shapes and sizes. It should be capable of absorbing electromagnetic energy at normal and large incident angles over a wide range of frequencies. This requires the material to possess a large relative complex dielectric constant (permitivity £`r), as well as a large relative complex magnetic permeability constant (£gr). Due to the nature of the complexity of the RAM, which surpasses standard analysis techniques, we have derived, for this thesis, frequency-domain two-dimensional finite-difference formulas for modeling the electromagnetic behavior of RAM. This involves using a material that has a given £`r(1:10 range) and £gr(1:1000 range) which covers a vast range of indices of refraction. To reduce the computational domain, we took care of implementing the numerical absorbing boundary conditions, while also implementing material averaging schemes for the finite-difference coefficients that cover the region where sample medium changes. Simple numerical examples are included to verify our mathematical model. We also implemented an optimal one-dimensional multi-layered RAM design, designed by using a constrained optimization searching technique. Included in the thesis are two complete, practical, optimal designs considering available material parameters (finite loss tangent) as well as their actual manufacturing limitations (layer thickness).

A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capacitors with sub-2.0 nm equivalent oxide thickness (EOT) have been achieved with the lightly Hf-doped TaOx. The low leakage currents and high dielectric constants of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 àtantalum nitride (TaNx) interface layer has been inserted between the Hf-doped TaOx films and the Si substrate to engineer the high-k/Si interface layer formation and properties. The electrical characterization result shows that the insertion of a 5 àTaNx between the doped TaOx films and the Si substrate decreased the film's leakage current density and improved the effective dielectric constant (keffective) value. The improvement of these dielectric properties can be attributed to the formation of the TaOxNy interfacial layer after high temperature O2 annealing. The main drawback of the TaNx interface layer is the high interface density of states and hysteresis, which needs to be decreased. Advanced metal nitride gate electrodes, e.g., tantalum nitride, molybdenum nitride, and tungsten nitride, were investigated as the gate electrodes for atomic layer deposition (ALD) HfO2 high-k dielectric material. Their physical and electrical properties were affected by the post metallization annealing (PMA) treatment conditions. Work functions of these three gate electrodes are suitable for NMOS applications after 800°C PMA. Metal nitrides can be used as the gate electrode materials for the HfO2 high-k film. The novel high-k gate stack structures studied in this study are promising candidates to replace the traditional poly-Si-SiO2 gate stack structure for the future CMOS technology node.

In this thesis, the study mainly focuses on developing multiband chip antennas for mobile handsets. Three possible solutions and their extended and integrated designs are presented. By using the dielectric material as the chip base, the chip antenna can be smaller in size and simpler in design. Most of the applications of the traditional chip antennas are rarely used as the mobile phone antenna and are commonly designed with a single operating band to cover GPS or WLAN operation only. Different types of the antennas are proposed in the thesis. The metal patterns of the monopole and loop antennas are manufactured inside the chip base with an occupied volume of generally less than 0.8 cc, some even as small as 0.3 cc. Electronic components like the lens of the embedded camera and the speaker can be integrated close to the chip antenna with little influences on the radiation characteristics. Consequently, the developed chip antennas are suitable for mobile communications and can cover not only GSM850/900/1800/1900/ UMTS bands but also WLAN/WiMAX bands.

Polyetherimide/(Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 (PEI/BSTZ8291) composites are fabricated using PEI, dispersant, solvents, and BSTZ powder. The effects of the content of BSTZ8291 filler on the chemical, physical, mechanical and dielectric properties of PEI/BSTZ8291 composites are studied in this paper. As the content of BSTZ filler increases from 10 wt% to 70 wt%, the relative permittivity of PEI/BSTZ8291 composites at 1 MHz increase from 2.58 to 17.71. The measurement of relative permittivity of PEI/BSTZ8291 composites is developed using the ¡§Rectangular Cavity Resonator¡¨ method from 1 GHz to 13.5 GHz. The relative permittivity is calculated by observing the frequencies of resonant cavity modes. The relative permittivity of PEI/BSTZ8291 composites is almost unchanged as the measured frequency increases from 1 GHz to 13.5 GHz. The presented characteristics are better than those of polymer/BaTiO3 composites. The improvement in the tensile strength of PEI/BSTZ8291 composites may be caused by the increased interactions between neat PEI and BSTZ8291 ceramic powder, and no phase separation phenomenon occurred. The Young¡¦s modulus of the PEI/BSTZ8291 composites is improved by about 58% as the content of BSTZ8291 filler from 0 to 50 wt% and the elongation at break of the composites decreases as the content of BSTZ8291 filler increases, indicating that the composite becomes somewhat brittle as compared with neat PEI. PEI/BSTZ8291 composite substrates are developed for the applications of circularly polarized (CP) antennas. A CP antenna with a simple structure is developed as the ultra high frequency (UHF) band radio frequency identification (RFID) reader application. The fabricated antenna has an impedance bandwidth spanning from 901 to 949 MHz, which covers the entire band of Taiwan UHF-RFID frequency. The measured return loss, Smith chart, axial ratio, radiation patterns and CP gain characteristics of antennas fabricated on PEI/BSTZ8291 composites are excellent in the band of Taiwan UHF-RFID frequency. It is demonstrated that the CP antenna fabricated on PEI/BSTZ substrate has the better characteristics and small size than those fabricated on FR4 substrate.

Polymer/ceramic nanocomposites benefit by combining high permittivities (r) of metal oxide nanoparticles with high dielectric strength and excellent solution-processability of polymeric hosts. Simple mixing of nanoparticles and polymer generally results in poor quality materials due mainly to the agglomeration of nanoparticles and poor miscibility of nanoparticles in host materials. Surface modification of metal oxide nanoparticles with phosphonic acid-based ligands was found to afford a robust surface modification and improve the processablity and the quality of nanocomposites. The use of phosphonic-acid modified barium titanate (BaTiO₃) nanoparticles in dielectric nanocomposites dramatically improved the stability of the nanoparticle dispersion and the quality of the nanocomposites. Surface modification of BaTiO₃ nanoparticles allowed high quality nanocomposite thin films in ferroelectric polymer hosts such as poly(vinylidene fluoride-co-hexafluoropropylene) with large volume fractions (up to 50 vol. %), which exhibited a remarkable combination of a high permittvity (35 at 1 kHz) and a high breakdown strength (210 V/µm) leading to a maximum energy storage density of 6.1 J/cm³. The effect of nanoparticle volume fractions on the dielectric properties of this nanocomposite system was investigated and compared with theoretical models. At high volume fraction of nanoparticles, the porosity of the nanocomposites was found to have important role in the dielectric performance. A combined effective medium theory and finite difference simulation was used to model the dielectric properties of high volume fraction dielectric nanocomposites with porosity. These results provide a guideline to optimize the volume fractions of nanoparticles for maximum energy density. Nanocomposites based on phosphonic acid-modified BaTiO₃ nanoparticles can also be used as printable high permittivity dielectrics in organic electronics. High volume fractions (up to 37 vol. %) of phosphonic acid-modified BaTiO₃ nanoparticles dispersed in cross-linked poly(4-vinylphenol) allowed solution-processable high permittivity thin films with a large capacitance density (~50 nF/cm²) and a low leakage current (10 8 A/cm²) suitable as a gate insulator in organic field-effect transistors (OFETs). Pentacene-based OFETs using these nanocomposites showed a low threshold voltage (< -2.0 V) and a large on/off current ratio (Ion/off 104 ~ 106) due to the high capacitance density and low leakage current of the gate insulator.

To enable fast and reliable processors, advances must be made in the interconnections on the printed circuit board and in the interconnections from the chip to the printed circuit board. Processing techniques have been demonstrated to fabricate a copper-clad encapsulated air dielectric layer to enable low loss off-chip electrical signal lines using sacrificial polymers and the three dimensional patterning capabilities of imprint lithography. The inclusion of an air gap can eliminate the dielectric loss allowing the signal to propagate over longer lengths. Additionally, the low dielectric constant of air lowers the loss contributions from the conductor and increases the signal propagation velocity reducing delay. The metal shielding could minimize the crosstalk noise and radiation losses that are significant at high frequencies. The three dimensional patterning capabilities of imprint lithography fabricated curved structures and rounded terminations which can reduce reflections at discontinuities. Furthermore, imprint lithography also created planarized surfaces which simplified the buildup process. Since imprint lithography, only uses temperature and pressure to make a pattern it is an inexpensive and simple process advancement. The metal-clad encapsulated air dielectric structures were fabricated in a comparable number of registration steps to traditional transmission lines. Implementation of all copper chip to substrate interconnects would provide high conductivity electrical connections, resistance to electromigration while avoiding formation of brittle intermetallics. High aspect ratio polymer molds for copper electroplating interconnects could enable improved integrated circuit electrical performance. The properties of a new aqueous base develop, negative-tone photosensitive polynorbornene polymer have been characterized to develop mechanically compliant all copper connections between the chip and printed circuit board. High aspect ratio features of 7:1 (height:width) were produced in 70 ìm thick films in a single coat with straight side-wall profiles and high fidelity. The polymer films studied had a contrast of 11.6 and a low absorption coefficient. To evaluate the polymer's suitability to microelectronics applications, epoxy cross-linking reactions were studied as a function of processing condition through Fourier transform infrared spectroscopy, nano-indentation, and dielectric measurements. The fully cross-linked films had an elastic modulus of 2.9 GPa and hardness of 0.18 GPa which can improve the mechanical compliance of the copper interconnections. A photo-imprint lithography process was developed to improve the photo-patterning of the polynorbornene polymer for high aspect ratio hollow structures. A shallow photo-imprint stamp was developed to physically displace material in the polymer core. Since the imprint stamp displaces material in the area of the feature, the effective film thickness is reduced compared to the bulk film. The reduction in film height reduced the effects of scattering in the core and also facilitated transport of developer within the core. The photo-imprint lithography process resulted in high aspect ratio hollow core pillars that exceeded optical resolution capabilities for comparable feature sizes.

Low-loss off-chip interconnects are required for energy-efficient communication in dense microprocessors. To meet these needs, air cavity parallel plate and microstrip lines with copper conductors were fabricated on an FR-4 epoxy-fiberglass substrate using conventional microelectronics manufacturing techniques. Copper transmission lines were separated by a composite dielectric of air and Avatrel 2000P and by a dielectric layer of air only. The composite dielectric lines were characterized to 10 GHz while the all air dielectric lines were characterized to 40 GHz. The transmission line structures showed loss as low 1.5 dB/cm at 40 GHz with an effective dielectric constant below 1.4. These novel structures show low loss in the dielectric due to the reduced relative permittivity and loss tangent introduced by the air cavity. Transmission line structures with a composite dielectric were built by coating the sacrificial polymer poly(propylene carbonate) (PPC) over a copper signal line, encapsulating with an overcoat polymer, electroplating a ground line, and decomposing PPC to form an air cavity. The signal and ground wires were separated by a layer of 15 µm of air and 20 µm of Avatrel 2000P. Air cavity formation reduced dielectric constant more than 30 percent and loss of less than 0.5 dB/cm was measured at 10 GHz. Residue from PPC decomposition was observed in the cavity of composite dielectric structures and the decomposition characteristics of PPC were evaluated to characterize the residue and understand its formation. Analysis of PPC decomposition based on molecular weight, molecular backbone structure, photoacid concentration and vapor pressure, casting solvent, and decomposition environment was performed using thermogravimetric analysis and extracting kinetic parameters. Novel interaction of copper and PPC was observed and characterized for the self-patterning of PPC on copper. Copper is dissolved from the surface during PPC spincoating and interacts with the polymer chains to improve stability. The improved thermal stability allows selective patterning of PPC on copper. Decomposition characteristics, residual metals analysis, and diffusion profile were analyzed. The unique interaction could simplify air-gap processing for transmission lines. Inorganic-organic hybrid polymers were characterized for use as overcoat materials. Curing characteristics of the monomers and mechanical properties of the polymer films were analyzed and compared with commercially available overcoat materials. The modulus and hardness of these polymers was too low for use as an air-gap overcoat, but may be valuable as a barrier layer for some applications. The knowledge gained from building transmission line structures with a composite dielectric, analyzing PPC decomposition, interaction with copper, and comparison of hybrid polymers with commercial overcoats was used to build air-gap structures with improved electrical design. The ground metal was separated from the signal only by air. The signal wire was supported from above using 60 µm of Avatrel 8000P as an overcoat. Structures showed loss of less than 1.5 dB/cm at 40 GHz, the lowest reported value for a fully encapsulated transmission line structure.

A new model for the complex dielectric constant, ε, of aqueous ammonia (NH4OH) has been developed based on laboratory measurements in the frequency range between 2-8.5 GHz for ammonia concentrations of 0-8.5 %NH3/volume and temperatures between 277-297 K. The new model has been validated for temperatures up to 313 K, but may be consistently extrapolated up to 475 K and ammonia concentrations up to 20 %NH3/volume. The model fits 60.26 % of all laboratory measurements within 2σ uncertainty. The new model is identical to the Meissner and Wentz (2004) model of the complex dielectric constant of pure water, but it contains a correction for dissolved ammonia. A description of the experimental setups, uncertainties associated with the laboratory measurements, the model fitting process, the new model, and its application to approximating jovian cloud opacity for NASA's Juno mission to Jupiter are provided.

<p>This report is introduced with a presentation of fundamental electromagnetic theories, which have helped a lot in the achievement of methods for calculation and design of microstrip transmission lines and circulators. The used software for the work is also based on these theories. </p><p>General considerations when designing microstrip solutions, such as different types of transmission lines and circulators, are then presented. Especially the design steps for microstrip lines, which have been used in this project, are described. Discontinuities, like bends of microstrip lines, are treated and simulated. There are also sections about power handling capability of microstrip transmission lines and different substrate materials. </p><p>In the result part there are computed and simulated dimensions of the microstrip transmission lines used in the prototype system. Simulations of conceivable loads in the cavity illustrate quantitatively the reflection coefficient. Even practical measurements are made in a network analyzer and are presentedin this part. </p><p>Suitable materials and dimensions for the final microwave feed transmission line system for high powers are then presented. Since circulators are included in the system a basic introduction to the design of these in stripline and microstrip techniques is also made. </p><p>At last conclusions, examinations of the designed system and comparisons to the today’s systems are made.</p>

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 158-172). Available also in a digital version from Dissertation Abstracts.