For many animals, rapid movements place high power demands on underlying muscles. Storage of muscle energy in elastic structures and the subsequent rapid release of that energy can effectively amplify muscle power. Elastic recoil can also confer thermal robustness to performance in behaviors occurring at variable temperatures. Muscle contractile performance tends to decrease at lower temperatures, but elastic recoil is less affected by temperature. Here I examine the impacts of temperature and scale in systems using elastic recoil and I explore possible interactive effects on movement performance. I explored the role that muscle contractile properties play in the differences in performance and thermal robustness between elastic and non-elastic systems by examining muscles from two species of plethodontid salamanders with elastically powered tongue projection and one with non-elastic tongue projection. These salamanders use tongue projection to capture prey and in species with elastic mechanisms, tongue projection is characterized by higher mechanical power output and thermal robustness compared to tongue projection of closely-related genera with non-elastic mechanisms. In vitro and in situ muscle experiments reveal that species differ in their muscle contractile properties, but these patterns do not predict the performance differences between elastic and non-elastic tongue projection. Overall, salamander tongue muscles are like other vertebrate muscles in contractile performance and thermal sensitivity. I conclude that changes in the tongue-projection mechanism, specifically the elaboration of elastic structures, are responsible for high performance and thermal robustness in species with elastic tongue projection. This suggests that the evolution of high-performance and thermally robust elastic-recoil mechanisms can occur via relatively simple changes to morphology, while muscle contractile properties remain relatively unchanged. The efficacy of elastic recoil in the face of changing temperature depends on the mechanical work done by muscle contraction being unaffected by temperature. In vitro stimulation of Cuban tree frog (Osteopilus septentrionalis) plantaris muscles reveals that interactions between force and temperature affect the mechanical work of muscle. At low temperatures (9 – 17°C), muscle work depends on temperature when shortening at any force, and temperature effects are greater at higher forces. At warmer temperatures (13 – 21°C), muscle work depends on temperature when shortening with intermediate and high forces (≥ 30% peak isometric tetanic force). Shortening velocity is most strongly affected by temperature at low temperatures and high forces. Power is also most strongly affected at low temperature intervals but this effect is minimized at intermediate forces. Effects of temperature on muscle force explain these interactions; force production decreases at lower temperatures, increasing the challenge of moving a constant force relative to the muscle’s capacity. These results suggest that animal performance that requires muscles to do work with low forces relative to a muscle’s maximum force production will be robust to temperature changes, and this effect should be true whether muscle acts directly or through elastic-recoil mechanisms and whether force is prescribed (i.e. internal) or variable (i.e. external). Conversely, performance requiring muscles to shorten with relatively large forces is expected to be more sensitive to temperature changes. How muscle work and power scale determines, in part, the scaling of movement performance. Muscle-mass-specific work is predicted to remain constant across a range of scales, assuming geometric similarity, while muscle-mass-specific power is expected to decrease with increasing scale. I tested these predictions by examining muscle morphology and contractile properties of plantaris muscles from frogs ranging in mass from 1.28 to 20.60 g. Scaling of muscle work and power was examined using both linear regression on log10-transformed data (LR) and non-linear regressions on untransformed data (NLR). In LR, muscle-mass-specific work decreased with increasing scale, but this is counteracted by a positive allometry of muscle mass to predict constant movement performance at all scales. These relationships were non-significant in NLR, though scaling with geometric similarity also predicts constant jump performance across scales. Both intrinsic shortening velocity and muscle-mass-specific power were positively allometric in both types of analysis. However, these differences between methods are caused not by large changes in scaling slopes, but by changing levels of statistical significance using corrections for multiple tests. The dependence of these conclusions on the method of regression, largely because of the setting and adjusting of an arbitrary alpha, demonstrates the importance of careful consideration of statistical methods when analyzing patterns of scaling. Nonetheless, scale accounts for little variation in contractile properties over the range of scales examined, indicating that other sources of intraspecific variation may be more important in determining muscle performance and its effects on movement. Elastic recoil used for power amplification is most often found in smaller animals, suggesting that performance in larger animals using less elastic recoil would be affected more by changing temperatures. To examine the interaction between scale and temperature on performance, I recorded jumps from 1-34 g Cuban tree frogs (Osteopilus septentrionalis) at 10, 20, and 30°C and compared jump performance to predictions based on the effects of temperature and scaling on muscle properties. High muscle-mass-specific power requirements from measured jumps indicate that frogs use elastic recoil at all scales to achieve performance that would be impossible using only muscle, and elastic recoil allows small frogs to achieve the same level of performance as large frogs. Performance that is greater at all temperatures than predictions from models using only muscle power could result from some combination of elastic recoil and power directly from muscle. The relative contributions of muscle power and elastic recoil cannot be discerned by examining temperature effects on performance because these effects are predicted to be so similar. Predicted performance from models of elastic recoil is significantly affected by changing temperature at all scales with temperature coefficient (Q10) values similar to predictions for muscle-powered jumping. Measured Q10 values are similar to those from both predictive models and there is no interaction between temperature and scale. Therefore, elastic recoil allows for jump performance that could not be achieved by muscle power alone at all temperatures and scales, but performance predictions from elastic recoil are not more thermally robust than predictions for muscle-powered jumping.

No description available.

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

Heavy Ion Elastic Recoil Detection Analysis (HIERDA) is a versatile Ion Beam Analysis technique well suited to multi-elemental depth profiling of thin layered structures and near-surface regions of materials. An existing limitation is the inability to accurately account for the pronounced broadening and tailing effects of multiple scattering typically seen in HIERDA spectra. This thesis investigates the role of multiple large angle scattering in heavy ion applications such as HIERDA, and seeks to quantify its contribution to experimental output. This is achieved primarily by the development of a computer simulation capable of predicting these contributions and using it to classify and quantify the interactions that cause them. Monte Carlo ion transport simulation is used to generate simulated HIERDA spectra and the results are compared to experimental data acquired using the Time of Flight HIERDA facility at the Australian Nuclear Science and Technology Organisat ion. A Monte Carlo simulation code was adapted to the simulation of HIERDA spectra with considerable attention on improving the modelling efficiency to reduce processing time. Efficiency enhancements have achieved simulation time reductions of two to three orders of magnitude. The simulation is shown to satisfactorily reproduce the complex shape of HIERDA spectra. Some limitations are identified in the ability to accurately predict peak widths and the absolute magnitude of low energy tailing in some cases. The code is used to identify the plural scattering contribution to the spectral features under investigation, and the complexity of plurally scattered ion and recoil paths is demonstrated. The program is also shown to be useful in the interpretation of overlapped energy spectra of elements of similar mass whose signals cannot be reliably separated experimentally. The effect of large angle scattering on the transmission of heavy ions through a nano-scale aperture mask, used to collimate an ion beam to a very small beam spot, is modelled using a version of the program adapted to handle the more complex geometry of the aperture mask. The effectiveness of nano-aperture collimation was studied for a variety of ion-energy combinations. Intensity, energy, and angular distributions of transmitted ions were calculated to quantify the degree to which scattering within the mask limits the spatial resolution achievable. The simulation successfully predicted the effect of misaligning the aperture and the beam, and the result has subsequently been observed experimentally. Transmitted ion distributions showed that the higher energy heavier ions studied are more effectively collimated than are lower energy lighter ions. However, there is still a significant probability of transmission of heavy ions with substantial residual energy beyond the perimeter of the aperture. For the intended application, ion beam lithography, these ions are likely to be problematic. The results indicate that medium energy He ions are the more attractive option, as the residual energy of scattered transmitted ions can be more readily managed by customising the etching process. Continuing research by experimentalists working in this area is proceeding in this direction as a result of the conclusions from this work.

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

>Magister Scientiae - MSc / Hydrogen has high energy density and it is regarded as the future energy carrier. Hydrogen can be stored as a gas in high-pressure cylinders, as a liquid in cryogenic tanks and as a solid in metal hydrides. The storage of hydrogen in gas and liquid form has many limitations. Light metal hydrides show high energy density and are a promising and more practical mode of hydrogen storage. In particular, titanium and its alloys are promising metal hydrides for hydrogen storage due to their high affinity to hydrogen. The aim of this study is to investigate the effect of thermal annealing on hydrogen storage capacity of Ti-Pd multilayer systems. Ti-Pd multilayer films were prepared on CP-Ti (commercial pure Ti) and Ti6Al4V substrates using an electron beam evaporator equipped with a thickness monitor. The sequential deposition of layers Pd(50nm)/Ti(25nm)/Pd(50nm) was done at a constant deposition rate of 0.6 Å/s. The first batch of samples were thermally annealed at 550 °C in vacuum for two hours, the second batch of samples were annealed at 550 oC under H2(15%)/Ar(85%) gas mixture for two hours and the third series of samples was annealed under pure H2 gas at 550 oC for one hour. SEM showed relatively homogeneous and smooth topography of surfaces in as-deposited samples, while a rough textured surface was observed in both samples annealed under vacuum and under H2/Ar gas mixture. The samples annealed under pure H2 gas did not show any sign of crystallites grow but instead a relatively smooth surface with sign of etching. XRD revealed structural transformation as evidenced by the presence of PdTi2 phase in samples annealed under vacuum; in samples annealed under the gas mixture Pd2Ti was noted in addition to TiH2 and TiO2. While the TiH2 phase is an indication of hydrogen absorption, the TiPd2 phase suggests intermixing of the deposited layers and the presence of TiO2 is evidence of oxidation. The samples annealed under pure H2 gas showed only TiH2 with no trace of structural transformation. RBS confirmed the intermixing of layers in the samples annealed under vacuum and H2(15%)/Ar(85%) gas mixture, while samples annealed under pure H2 gas did not show any intermixing of layers. ERDA revealed an average H content of ~ 3.5 at.% in CP-Ti and ~6.2 at.% in Ti6Al4V for samples annealed under H2(15%)/Ar(85%) gas mixture. We recorded an hydrogen content of ~19.5 at.% in CP-Ti annealed under pure H2 while ~25.5 at.% was found in Ti6Al4V annealed under the same conditions. When the thickness of the Pd catalyst layers was increased to 100 nm (i.e. Pd (100 nm)/Ti (25 nm)/Pd (100 nm)), only ~ 12.5 at.% and 11.2 at. % hydrogen content was recorded in samples prepared on CP-Ti and Ti6Al4V alloy respectively, both annealed under pure hydrogen for one hour as above.

Dans le but d’observer l’influence du nombre de plans atomiques sur les propriétés op- tiques de couches ultra-minces de pérovskite d’halogénure de plomb méthylammonium, des échantillons ont été fabriqués suivant trois méthodes de synthèse, une par synthèse liquide en deux étapes et deux par évaporation. La qualité des échantillons synthétisés selon la méthode liquide a été vérifiée par des mesures de spectroscopie rayon X à angle rasant. Nous avons observé que les temps de trempage utilisés n’étaient pas assez longs afin de convertir tout le PbI 2 . Aucun autre échantillon n’a cependant été synthétisé selon cette mé- thode puisque leur épaisseur était trop grande pour ce qui était recherché. Les échantillons synthétisés par évaporation ont été vérifiés par rétrodiffusion Rutherford. Afin de vérifier les propriétés optiques de ces échantillons, des mesures de photoluminescence ont été ef- fectuées. Aucune émission pouvant être attribuée aux pérovskites n’a été trouvée. Suivant l’hypothèse que cela était dû à la dégradation des couches par l’humidité, des mesures de RBS utilisant la résonance de l’oxygène ont été effectuées afin de voir s’il y avait une aug- mentation dans la quantité d’oxygène comparativement à un substrat de silicium vierge. Nous avons trouvé (11±2)×10 15 atomes/cm 2 d’oxygène dans le substrat vierge par rapport à (7±2)×10 15 atomes/cm 2 d’oxygène pour l’échantillon. Il y a donc 36% moins d’oxygène dans l’échantillon, alors que la quantité de silicium dans le pic d’oxyde était similaire dans les deux mesures, suggérant la même épaisseur d’oxyde initiale. Il semble donc qu’une des étapes de synthèse enlève de l’oxygène et qu’il y a globalement une diminution dans la quantité d’oxy- gène. Comme cela ne concorde avec aucune des deux situations envisagées, dégradation ou non, il n’était pas possible de déterminer par ces mesures si l’absence de signal de photo- luminescence était due à l’humidité. Des mesures RBS/ERD ont donc été effectuées afin de mesurer s’il y avait insertion de l’autre composant de l’humidité, soit l’hydrogène. Nous avons trouvé que la quantité d’hydrogène présente était 3.6 fois plus élevée que ce qui de- vrait être le cas à partir de la quantité des précurseurs évaporés. Une si grande différence ne peut être expliquée par la dégradation par l’humidité, il y a forcément d’autres mécanismes qui provoquent une augmentation de la quantité d’hydrogène. Il s’avère donc que la chimie entourant la synthèse et la dégradation des échantillons est plus complexe qu’initialement considérée. / In order to observe the influence of the number of atomic layers on the optical properties of ultrathin layers of methylammonium lead iodide perovskite, samples were synthesized using three different methods, one by a two-step liquid synthesis and two by evaporation. The quality of the samples synthesized by the liquid method was verified by grazing incidence X-ray diffraction spectroscopy measurements. We observed that the soaking times used were not long enough to convert all the PbI2. No other sample was synthesized by this method since the thickness of these was too great for our goal. The samples synthesized by evaporation were checked by Rutherford backscattering spectrometry. In order to verify the optical properties of these samples, photoluminescence measurements were made. No emission that can be attributed to perovskites has been found. Under the assumption that this was due to moisture degradation of the perovskite layers, RBS measurements using oxygen resonance were performed to see if there was an increase in the amount of oxygen compared to a virgin silicon substrate. We found (11±2)×1015atoms/cm2 of oxygen for the substrate versus (7±2)×1015atoms/cm2 of oxygen for the sample. There is 36% less oxygen in the sample, whereas the quantity of silicon in the surface is similar in both measurements, suggesting the same initial oxide thickness. It seems that one of the synthesis steps removes oxygen and that there is globally a decrease in the amount of oxygen. Since this does not concord with either of the two situations considered, degradation or not, it was not possible to determine just from these measurement if the lack of photoluminescence signal was due to moisture. RBS / ERD measurements were then taken to measure whether there was an increase in the other component of moisture, hydrogen. We found that the amount of hydrogen present was 3.6 time higher then predicted by the amount of evaporated precursors. Such a large difference can not be explained solely by moisture degradation, there are inevitably other mechanisms that cause an increase in the amount of hydrogen. It turns out that the chemistry surrounding the synthesis and the degradation of the samples is more complex than initially considered.

<p>Mechanical property and thermal stability of Zr-Si-N films of varying silicon contents deposited on Al₂O₃ (0001) substrates are characterized. All films provided for characterization were deposited by reactive DC magnetron sputter deposition technique from elemental Zr and Si targets in a N₂/Ar plasma at 800 ^oC. The hardness and microstructures of the as deposited films and post-annealed films up to 1100 ^oC are evaluated by means of nanoindentation, X-ray diffractometry and transmission electron microscopy. The Zr-Si-N films with 9.4 at.% Si exhibit hardness as high as 34 GPa and a strong (002) texture within which vertically elongated ZrN crystallites are embedded in a Si₃N₄ matrix. The hardness of these two dimensional nanocomposite films remains stable up to 1000 ^oC annealing temperatures which is in contrast to ZrN films where hardness degradation occurs already above 800 ^oC. The enhanced thermal stability is attributed to the presence of Si₃N₄ grain boundaries which act as efficient barriers to hinder the oxygen diffusion. X-ray amorphous or nanocrystalline structures are observed in Zr-Si-N films with silicon contents > 13.4 at.%. After the annealing treatments, crystalline phases such as ZrSi₂, ZrO₂ and Zr₂O are formed above 1000 ^oC in the Si-containing films while only zirconia crystallites are observed at 800 ^oC in pure ZrN films because oxygen acts as artifacts in the vacuum furnace. The structural, compositional and hardness comparison of as-deposited and annealed films reveal that the addition of silicon enhances the thermal stability compared to pure ZrN films and the hardness degradation stems from the formation of oxides at elevated temperatures.</p>

Mechanical property and thermal stability of Zr-Si-N films of varying silicon contents deposited on Al2O3 (0001) substrates are characterized. All films provided for characterization were deposited by reactive DC magnetron sputter deposition technique from elemental Zr and Si targets in a N2/Ar plasma at 800 oC. The hardness and microstructures of the as deposited films and post-annealed films up to 1100 oC are evaluated by means of nanoindentation, X-ray diffractometry and transmission electron microscopy. The Zr-Si-N films with 9.4 at.% Si exhibit hardness as high as 34 GPa and a strong (002) texture within which vertically elongated ZrN crystallites are embedded in a Si3N4 matrix. The hardness of these two dimensional nanocomposite films remains stable up to 1000 oC annealing temperatures which is in contrast to ZrN films where hardness degradation occurs already above 800 oC. The enhanced thermal stability is attributed to the presence of Si3N4 grain boundaries which act as efficient barriers to hinder the oxygen diffusion. X-ray amorphous or nanocrystalline structures are observed in Zr-Si-N films with silicon contents &gt; 13.4 at.%. After the annealing treatments, crystalline phases such as ZrSi2, ZrO2 and Zr2O are formed above 1000 oC in the Si-containing films while only zirconia crystallites are observed at 800 oC in pure ZrN films because oxygen acts as artifacts in the vacuum furnace. The structural, compositional and hardness comparison of as-deposited and annealed films reveal that the addition of silicon enhances the thermal stability compared to pure ZrN films and the hardness degradation stems from the formation of oxides at elevated temperatures.

Controlled thermonuclear fusion may become an attractive future electrical power source. The most promising of all fusion machine concepts is called a tokamak. The fuel, a plasma made of deuterium and tritium, must be confined to enable the fusion process. It is also necessary to protect the wall of tokamaks from erosion by the hot plasma. To increase wall lifetime, the high-Z metal tungsten is foreseen as wall material in future fusion devices due to its very high melting point. This thesis focuses on the following consequences of plasma impact on a high-Z wall: (i) erosion, transport and deposition of high-Z wall materials; (ii) fuel retention in tokamak walls; (iii) long term effects of plasma impact on structural machine parts; (iv) dust production in tokamaks. An extensive study of wall components has been conducted with ion beam analysis after the final shutdown of the TEXTOR tokamak. This unique possibility offered by the shutdown combined with a tracer experiment led to the largest study of high-Z metal migration and fuel retention ever conducted. The most important results are:   - transport is greatly affected by drifts and flows in the plasma edge; - stepwise transport along wall surfaces takes place mainly in the toroidal direction; - fuel retention is highest on slightly retracted wall elements; - fuel retention is highly inhomogeneous.   A broad study on structural parts of a tokamak has been conducted on the TEXTOR liner. The plasma impact does neither degrade mechanical properties nor lead to fuel diffusion into the bulk after 26 years of duty time. Peeling deposition layers on the liner retain fuel in the order of 1g and represent a dust source. Only small amounts of dust are found in TEXTOR with overall low deuterium content. Security risks in future fusion devices due to dust explosions or fuel retention in dust are hence of lesser concern. / <p>QC 20170630</p>