La spécificité de l’objet de la PI imprime une singularité au régime du contrat d’entreprise. L’affirmation se constate aussi bien au sujet de la PLA qu’au sujet de la PIND et appelaient donc la recherche d’une théorie générale. Concernant la PLA, l’existence de droits moraux de l’auteur perturbe la relation contractuelle et justifie la mise en œuvre d’un formalisme important. L’objectif du législateur est alors de tenter de protéger l’auteur, envisagé comme la partie faible face au maître de l’ouvrage. Et quoique certaines exceptions aient été mises en place, elles demeurent insuffisantes. Une telle méthode « principe – exception » se révèle néanmoins alternativement inutile ou préjudiciable, de sorte qu’il conviendrait de convertir les exceptions en règle commune. À titre d’exemple, l’attribution initiale des droits d’auteur au maître de l’ouvrage dans le cadre de l’œuvre collective ou le logiciel devrait être généralisé. Si la protection apportée à l’entrepreneur dans le cadre du droit de la propriété littéraire et artistique apparaît ainsi excessive, elle est au contraire insuffisante dans le cadre du droit de la propriété industrielle. En effet, en dépit de fondements identiques, le contrat d’entreprise relatif aux droits de propriété industrielle est régi par les dispositions du Code civil, lesquelles ne protègent pas l’auteur ou le créateur. Ainsi, dans ce cadre, l’inventeur ne bénéficie pas d’un droit à la rémunération proportionnelle, car l’aspect économique domine toutes les étapes de la relation contractuelle, de l’obtention de la création à son exploitation. Néanmoins, les règles de l’attributions du droit à la création industrielle ne sont pas claires / The specificity of the subject of intellectual property entitled to a singularity of the contract of enterprise regime. The assertion is evident both on the literary and artistic property as about industrial property and therefore called the search for a general theory.Concerning the literary and artistic property, the existence of moral rights of the author disrupts the contractual relationship and justify the implementation of an important formalism. The aim of the legislator is then to try to protect the author, seen as the weak party to face the project Owner. And although some exceptions have been introduced, they remain insufficient. Nevertheless, such a method "principle - exception" proves alternately unnecessary or harmful, so the exceptions should be converted into common rule. For example, the initial attribution of copyright to the Owner project under the collective work or software should be generalized.If the protection provided to the contractor under the law of literary and artistic property thus appears excessive, it is insufficient otherwise under the law of industrial property. Indeed, despite identical basis, the contract of enterprise for industrial property rights is governed by the provisions of the Civil Code, which do not protect the author or creator. Thus, in this context, the inventor does not have a right to remuneration proportional because the economic aspect dominates all stages of the contractual relationship, obtaining creation to its exploitation. Nevertheless, the rules of the attribution of the right to creation industrial are not clear

Předkládaná dizertační práce se zabývá stanovením hlavních členů Williamsova asymptotického rozvoje popisujícího rovinné elektro-elastické pole v okolí piezoelektrických bi-materiálových vrubů a trhlin na rozhraní za použití rozšířeného Lechnického-Eshelbyho-Strohova formalismu v návaznosti na čistě anizotropní pružnost. Je ukázáno, že rozšířený Lechnického-Eshelbyho-Strohův formalismus představuje spolu s moderními programovacími koncepty v jazyku Python efektivní a také praktický nástroj pro lomovou analýzu piezoelektrických bi-materiálů. Teoretická část práce popisuje aspekty anizotropní pružnosti a její návaznost na piezoelektrické materiály. Základní rovnice zaměřené na speciální typy monoklinických materiálů, které umožňují oddělení rovinného a anti-rovinného problému, jsou vyjádřeny pomocí komplexních potenciálů. V praktické části práce je sestaven problém vlastního hodnot pro bi-materiálový vrub, na jehož základě jsou stanoveny exponenty singularity a pomocí dvoustavového -integrálu také zobecněné faktory intenzity napětí. Veškeré vztahy a numerické procedury jsou následně rozšířeny na problém piezoelektrických bi-materiálových vrubů a podrobně prozkoumány v uvedených příkladech. Zvláštní pozornost je věnována přechodu asymptotického řešení téměř zavřených vrubů a trhlin na rozhraní. Vliv směru polarizace na asymptotické řešení je také zkoumán. Přesnost stanovení zobecněných faktorů intenzity napětí je testována srovnáním asymptotického řešení a řešení získaného pomocí metody konečných prvků s velmi jemnou sítí konečných prvků. Na závěr je formalismus modifikován pro nepiezoelektrické materiály.

Presented diploma thesis is concerned with problems of a stress singularity exponent and a generalized stress intensity factor determination, by dint the stress field in the vicinity of the stress concentrator can be consecutively determined. This task is possible to sectionalize into three parts. The first part summarizes basic information about linear anisotropic materials, deals with fundamentals of the linear elastic fracture mechanics and introduces its generalization to the case of the generalized stress intensity factors. The second part is dedicated to a special theory of anisotropic elasticity - Lekhnitskii-Eshelby-Stroh formalism (LES). Furthermore, a theory of the psi-integral is introduced, by dint the stress intensity factor is determined. The final part applies the LES theory and the psi-integral to the concrete material configuration of a crack on the bimaterial interface, a special example of a sharp bimaterial notch. By means of analytical-numerical algorithm in ANSYS and Silverforst FNT95 software the stress singularity exponents and generalised stress intensity factors are consecutively computed.

Gegenstand dieser Arbeit ist die Forschungsdisziplin, welche in der Strukturmechanik als Modellordnungsreduktion bekannt ist. Im Mittelpunkt stehen Kopplungsprozesse von starren und elastischen Mehrkörpersystemen - sowohl in theoretischer Hinsicht als auch bezüglich der praktischen Realisation im Rahmen des Finite-Elemente-Programms ANSYS und des Mehrkörpersimulationsprogramms SIMPACK. Eine Vielfalt von strukturerhaltendenMOR-Methoden wurde zum Zwecke des Überblicks dargestellt. Darüber hinaus findet sich eine Kategorisierungsmethodik in Hinsicht auf den später beschriebenen FEM-MKS-Kopplungsprozess. Die Effizienz der MOR-Methoden wird sowohl hinsichtlich der Qualität der ROM als auch bezogen auf die hierfür benötigte Rechenzeit bemessen. Aus diesem Grunde wurden etliche MOR Schemata dargelegt, mit dem Ziel, den Effizienzfaktor während der Berechnung eines ROMs zu maximieren, das heißt maximale Qualität und minimale Rechenzeit zu erzielen. Die Validierung der dynamischen ROM-Eigenschaften basiert auf der Anwendung der sogenannten Modellkorrelationskriterien. Dies wurde an vier Anwendungsbeispielen aus dem Feld der Strukturmechanik getestet: der 3D-Balkenstruktur, der UIC60-Schiene, dem Pleuel und der Kurbelwelle. Die Anwendung der diagonal perturbation-Methodik verbessert die Kondition der Steifigkeitsmatrix eines Modells, von beiden Arten von Lösungsprozeduren, d.h. direkte und iterative Verfahren, betroffen sind. Die dynamische Bewegung mechanischer MKS wird als ein Index-3-DAE-Systemformuliert und die Information über die elastischen Körper wird in Form der sogenannten Standard Input Datei in einen MKS-Code transferriert. Die Einführung des Back-projection-Ansatzes ermöglicht die weitere Verwendung bestimmter ROM-Typen, derren assoziierten physikalische Eigenschaften unangemessen definiert wurden. Zum Abschluss werden die theoretischen, modellierenden und numerischen Fortschritte der Arbeit resümiert und kombiniert im Sinne der Model Order Reduction Package Toolbox (MORPACK). Die Matlab-basierte MORPACK-Toolbox ermöglicht den FEM-MKS-Kopplungsprozess für die Verwendung von ANSYS und SIMPACK. Hierin sind ein Großteil der zuvor erläuterten Erweiterungen eingeschlossen. Mit Hilfe der zwei integrierten inneren MOR- und SID-Schnittstellen als auch der vier Anwendungsebenen wird der Import von freien oder eingespannten ROM in SIMPACK ermöglicht. / The research discipline referred to as the Model Order Reduction in structural mechanics is the topic of this Thesis. Special emphasis is given to the coupling process of rigid and elastic Multi Body Dynamics in terms of both the theoretical aspects and the practical realization within the environment of the commercial Finite Element and the Multi Body Systems software packages, ANSYS and SIMPACK respectively. In this regard, a variety of structure preserving Model Order Reduction methods is presented and a categorization methodology is provided in view of the later FEM-MBS coupling process. The algorithmic scheme of several of the MOR methods indicates the capability of generating qualitatively better Reduced Order Models than the standardized Guyan and Component Mode Synthesis approaches. The efficiency of a MOR method is measured in terms of both the quality of the ROM and the associated time required for the .computation Based on the application of the, so called, Model Correlation Criteria the efficiency of the MOR schemes is tested on four application examples originating from the area of structural mechanics, i.e. the 3D elastic solid bar structure, the UIC60 elastic rail, the elastic piston rod, and the elastic crankshaft model. Herewith, the superiority of alternative MOR schemes in comparison to Guyan or CMS methods is demonstrated in terms of the ROM?s quality and the computation time by the use of either the one-step or the two-step MOR algorithms. Numerous of the FE discretized structures suffer from the, so called, ill-conditioned properties regarding the associated stiffness matrix. On one hand, the direct solution of a MOR method might produce erroneous ROMs due to the associated truncation phenomenon and on the other hand, any kind of iterative approach suffers from vast computation times. The application of the diagonal perturbation methodology improves the condition properties of the model?s stiffness matrix and thus, both kinds of the aforementioned solution procedures are affected. The back-projection approach is introduced, which projects the ROM belonging to the Non physical subspace reduction-expansion methods category back onto the physical configuration space and thus, enabling its further usage in a MBS code, e.g. SIMPACK. Finally, the theoretical, modelling, and numerical advancements are combined in terms of the Model Order Reduction Package. The Matlab-based MORPACK toolbox enables the FEM-MBS coupling process for the ANSYS-SIMPACK utilization and herewith, several of the aforementioned enhancements are included. With the help of the two integrated inner interfaces, i.e. MOR and SID, as well as four application levels, the import into SIMPACK of alternatively free or fixed ROMs is enabled. The functionality of MORPACK is demonstrated based on two application examples, namely, the 3D elastic solid bar and the UIC60 elastic rail, the dynamic properties of which are validated prior to their import into SIMPACK.

We investigate the electronic transport properties of semiconducting (m, n) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport calculations based on recursive Green's function techniques and an underlying density-functional-based tight-binding model for the description of the electronic structure. Zigzag CNTs as well as chiral CNTs of different diameter are considered. Different defects are exemplarily represented by monovacancies and divacancies. We show the energy-dependent transmission and the temperature-dependent conductance as a function of the number of defects. In the limit of many defetcs, the transport is described by strong localization. Corresponding localization lengths are calculated (energy dependent and temperature dependent) and systematically compared for a large number of CNTs. It is shown, that a distinction by (m − n)mod 3 has to be drawn in order to classify CNTs with different bandgaps. Besides this, the localization length for a given defect probability per unit cell depends linearly on the CNT diameter, but not on the CNT chirality. Finally, elastic mean free paths in the diffusive regime are computed for the limit of few defects, yielding qualitatively same statements.

Crime and Punishment in the Eyes of Cesare Beccaria An Analysis of an Enlightenment Penal Law Reform The Ph.D. dissertation is centred around a relatively concise, but extremely influential book: Cesare Beccaria's treatise On Crimes and Punishments (Dei delitti e delle pene). This work, first published in 1764, sums up in a clear, yet intellectually penetrating way all the main Enlightenment principles of a complex penal law reform. In its time, the book was not only of great philosophical importance and it not only changed the way western societies perceived crime and punishment, but it also served as a concrete guideline for various penal law reformers. It is therefore by no means an overstatement to say that it caused a true paradigm shift in both legal and moral philosophy. The main aim of the thesis is to give a legal-philosophical account of Beccaria's thoughts on crime and punishment, to examine their historical as well as moral background and show the actual impact they had on the legislation of many different, mainly European states. The first chapters of the dissertation are focused on Beccaria's life, his intellectual background and his formative influences (particularly the French, English and Scottish Enlightenment, the social contract theory, utilitarianism, Montesquieu's thoughts on penal...

Die fortschreitenden Entwicklungen in der Mikro- und Nanotechnologie erfordern eine solide Unterstützung durch Simulationen. Numerische Bauelementesimulationen waren und sind dabei unerlässliche Werkzeuge, die jedoch zunehmend an ihre Grenzen kommen. So basieren sie auf Parametern, die für beliebige Atomanordnungen nicht verfügbar sind, und scheitern für stark verkleinerte Strukturen infolge zunehmender Relevanz von Quanteneffekten. Diese Arbeit behandelt den Transport in Siliziumnanodrähten sowie durch NiSi2-Si-Grenzflächen. Dichtefunktionaltheorie wird dabei verwendet, um die stabile Atomanordnung und alle für den elektronischen Transport relevanten quantenmechanischen Effekte zu beschreiben. Bei der Untersuchung der Nanodrähte liegt das Hauptaugenmerk auf der radialen Abhängigkeit der elektronischen Struktur sowie deren Änderung bei Variation des Durchmessers. Dabei zeigt sich, dass der Kern der Nanodrähte für den Ladungstransport bestimmend ist. Weiterhin kann ein Durchmesser von ungefähr 5 nm identifiziert werden, oberhalb dessen die Zustandsdichte im Nanodraht große Ähnlichkeiten mit jener des Silizium-Volumenkristalls aufweist und der Draht somit zunehmend mit Näherungen für den perfekt periodischen Kristall beschrieben werden kann. Der Fokus bei der Untersuchung der NiSi2-Si-Grenzflächen liegt auf der Symmetrie von Elektron- und Lochströmen im Tunnelregime, welche für die Entwicklung von rekonfigurierbaren Feldeffekttransistoren besondere Relevanz hat. Verschiedene NiSi2-Si-Grenzflächen und Verzerrungszustände werden dabei systematisch untersucht. Je nach Grenzfläche ist die Symmetrie dabei sehr unterschiedlich und zeigt auch ein sehr unterschiedliches Verhalten bei externer Verzerrung. Weiterhin werden grundlegende physikalische Größen mit Bezug zu NiSi2-Si-Grenzflächen betrachtet. So wird beispielsweise die Stabilität anhand von Grenzflächen-Energien ermittelt. Am stabilsten sind {111}-Grenzflächen, was deren bevorzugtes Auftreten in Experimenten erklärt. Weitere wichtige Größen, deren Verzerrungsabhängigkeit untersucht wird, sind die Schottky-Barrierenhöhe, die effektive Masse der Ladungsträger sowie die Austrittsarbeiten von NiSi2- und Si-Oberflächen. Ein Beitrag zur Modellentwicklung numerischer Bauelementesimulationen wird durch einen Vergleich zwischen den Ergebnissen von Dichtefunktionaltheorie-basierten Transportrechnungen und denen eines vereinfachten Models basierend auf der Wentzel-Kramers-Brillouin-Näherung geliefert. Diese Näherung ist Teil vieler numerischer Bauelementesimulatoren und erlaubt die Berechnung des Tunnelstroms basierend auf grundlegenden physikalischen Größen. Der Vergleich ermöglicht eine Evaluierung des vereinfachten Models, welches anschließend genutzt wird, um den Einfluss der grundlegenden physikalischen Größen auf den Tunneltransport zu untersuchen.:Index of Abbreviations 1. Introduction 2. Silicon Based Devices and Silicon Nanowires 2.1. Introduction 2.2. The Reconfigurable Field-effect Transistor 2.2.1. Design and Functionality 2.2.2. Fabrication 2.3. Overview Over Silicon Nanowires 2.3.1. Geometric Structure 2.3.2. Fabrication Techniques 2.3.3. Electronic Properties 3. Simulation Tools 3.1. Introduction 3.2. Electronic Structure Calculations 3.2.1. Introduction and Basis Functions 3.2.2. Density Functional Theory 3.2.3. Description of Exchange and Correlation Effects 3.2.4. Practical Aspects of Density Functional Theory 3.3. Electron Transport 3.3.1. Introduction 3.3.2. Scattering Theory 3.3.3. Wentzel-Kramers-Brillouin Approximation for a Triangular Barrier 3.3.4. Non-equilibrium Green’s Function Formalism A. Radially Resolved Electronic Structure and Charge Carrier Transport in Silicon Nanowires A.1. Introduction A.2. Model System A.3. Results and Discussion A.4. Summary and Conclusions A.5. Appendix A: Computational Details A.6. Appendix B: Supplementary Material A.6.1. Comparison of the Band Gap Between Relaxed and Unrelaxed SiNWs A.6.2. Band Structures for Some of the Calculated SiNWs A.6.3. Radially Resolved Density of States for Some of the Calculated SiNWs B. Electron Transport Through NiSi2-Si Contacts and Their Role in Reconfigurable Field-effect Transistors B.1. Introduction B.2. Model for Reconfigurable Field-effect Transistors B.2.1. Atomistic Quantum Transport Model to Describe Transport Across the Contact Interface B.2.2. Simplified Compact Model to Calculate the Device Characteristics B.3. Results and Discussion B.3.1. Characteristics of a Reconfigurable Field-effect Transistor B.3.2. Variation of the Crystal Orientations and Influence of the Schottky Barrier B.3.3. Comparison to Fabricated Reconfigurable Field-effect Transistors B.4. Summary and Conclusions B.5. Appendix: Supplementary Material B.5.1. Band Structure and Density of States of the Contact Metal B.5.2. Relaxation Procedure B.5.3. Total Transmission Through Multiple Barriers C. Formation and Crystallographic Orientation of NiSi2-Si Interfaces C.1. Introduction C.2. Fabrication and characterization methods C.3. Model System and Simulation Details C.4. Results and discussion C.4.1. Atomic structure of the interface C.4.2. Discussion of ways to modify the interface orientation C.5. Summary C.6. Appendix: Supplementary Material D. NiSi2-Si Interfaces Under Strain: From Bulk and Interface Properties to Tunneling Transport D.1. Introduction D.2. Model System and Simulation Approach D.3. Computational Details D.3.1. Electronic Structure Calculations (Geometry Relaxations) D.3.2. Electronic Structure Calculations (Electronic Structure) D.3.3. Device Calculations D.4. Tunneling Transport From First-principles Calculations D.4.1. Evaluation of the Current D.4.2. Isotropic Strain D.4.3. Anisotropic Strain D.5. Transport Related Properties and Effective Modeling Schemes D.5.1. Schottky Barrier Height D.5.2. Simplified Transport Model D.5.3. Models for the Schottky Barrier Height D.6. Summary and Conclusions D.7. Appendix: Supplementary Material D.7.1. Schottky Barriers of the {110} Interface Under Anisotropic Strain D.7.2. Silicon Band Structure, Electric Field, and Number of Transmission Channels D.7.3. k∥-resolved Material Properties D.7.4. Evaluation of the Work Functions and Electron Affinities D.7.5. Verification of the Work Function Calculation 4. Discussion 5. Ongoing Work and Possible Extensions 6. Summary Bibliography List of Figures List of Tables Acknowledgements Selbstständigkeitserklärung Curriculum Vitae Scientific Contributions / The ongoing developments in micro- and nanotechnologies require a profound support from simulations. Numerical device simulations were and still are essential tools to support the device development. However, they gradually reach their limits as they rely on parameters, which are not always available, and neglect quantum effects for small structures. This work addresses the transport in silicon nanowires and through NiSi2-Si interfaces. By using density functional theory, the atomic structure is considered, and all electron transport related quantum effects are taken into account. Silicon nanowires are investigated with special attention to their radially resolved electronic structure and the corresponding modifications when the silicon diameter is reduced. The charge transport occurs mostly in the nanowire core. A diameter of around 5 nm can be identified, above which the nanowire core exhibits a similar density of states as bulk silicon. Thus, bulk approximations become increasingly valid above this diameter. NiSi2-Si interfaces are studied with focus on the symmetry between electron and hole currents in the tunneling regime. The symmetry is especially relevant for the development of reconfigurable field-effect transistors. Different NiSi2-Si interfaces and strain states are studied systematically. The symmetry is found to be different between the interfaces. Changes of the symmetry upon external strain are also very interface dependent. Furthermore, fundamental physical properties related to NiSi2-Si interfaces are evaluated. The stability of the different interfaces is compared in terms of interface energies. {111} interfaces are most stable, which explains their preferred occurrence in experiments. Other properties, whose strain dependence is studied, include the Schottky barrier height, the effective mass of the carriers, and work functions. A contribution to the development of numerical device simulators will be given by comparing the results from density functional theory based transport calculations and a model based on the Wentzel-Kramers-Brillouin approximation. This approximation, which is often employed in numerical device simulators, offers a relation between interface properties and the tunneling transport. The comparison allows an evaluation of the simplified model, which is then used to investigate the relation between the fundamental physical properties and the tunneling transport.:Index of Abbreviations 1. Introduction 2. Silicon Based Devices and Silicon Nanowires 2.1. Introduction 2.2. The Reconfigurable Field-effect Transistor 2.2.1. Design and Functionality 2.2.2. Fabrication 2.3. Overview Over Silicon Nanowires 2.3.1. Geometric Structure 2.3.2. Fabrication Techniques 2.3.3. Electronic Properties 3. Simulation Tools 3.1. Introduction 3.2. Electronic Structure Calculations 3.2.1. Introduction and Basis Functions 3.2.2. Density Functional Theory 3.2.3. Description of Exchange and Correlation Effects 3.2.4. Practical Aspects of Density Functional Theory 3.3. Electron Transport 3.3.1. Introduction 3.3.2. Scattering Theory 3.3.3. Wentzel-Kramers-Brillouin Approximation for a Triangular Barrier 3.3.4. Non-equilibrium Green’s Function Formalism A. Radially Resolved Electronic Structure and Charge Carrier Transport in Silicon Nanowires A.1. Introduction A.2. Model System A.3. Results and Discussion A.4. Summary and Conclusions A.5. Appendix A: Computational Details A.6. Appendix B: Supplementary Material A.6.1. Comparison of the Band Gap Between Relaxed and Unrelaxed SiNWs A.6.2. Band Structures for Some of the Calculated SiNWs A.6.3. Radially Resolved Density of States for Some of the Calculated SiNWs B. Electron Transport Through NiSi2-Si Contacts and Their Role in Reconfigurable Field-effect Transistors B.1. Introduction B.2. Model for Reconfigurable Field-effect Transistors B.2.1. Atomistic Quantum Transport Model to Describe Transport Across the Contact Interface B.2.2. Simplified Compact Model to Calculate the Device Characteristics B.3. Results and Discussion B.3.1. Characteristics of a Reconfigurable Field-effect Transistor B.3.2. Variation of the Crystal Orientations and Influence of the Schottky Barrier B.3.3. Comparison to Fabricated Reconfigurable Field-effect Transistors B.4. Summary and Conclusions B.5. Appendix: Supplementary Material B.5.1. Band Structure and Density of States of the Contact Metal B.5.2. Relaxation Procedure B.5.3. Total Transmission Through Multiple Barriers C. Formation and Crystallographic Orientation of NiSi2-Si Interfaces C.1. Introduction C.2. Fabrication and characterization methods C.3. Model System and Simulation Details C.4. Results and discussion C.4.1. Atomic structure of the interface C.4.2. Discussion of ways to modify the interface orientation C.5. Summary C.6. Appendix: Supplementary Material D. NiSi2-Si Interfaces Under Strain: From Bulk and Interface Properties to Tunneling Transport D.1. Introduction D.2. Model System and Simulation Approach D.3. Computational Details D.3.1. Electronic Structure Calculations (Geometry Relaxations) D.3.2. Electronic Structure Calculations (Electronic Structure) D.3.3. Device Calculations D.4. Tunneling Transport From First-principles Calculations D.4.1. Evaluation of the Current D.4.2. Isotropic Strain D.4.3. Anisotropic Strain D.5. Transport Related Properties and Effective Modeling Schemes D.5.1. Schottky Barrier Height D.5.2. Simplified Transport Model D.5.3. Models for the Schottky Barrier Height D.6. Summary and Conclusions D.7. Appendix: Supplementary Material D.7.1. Schottky Barriers of the {110} Interface Under Anisotropic Strain D.7.2. Silicon Band Structure, Electric Field, and Number of Transmission Channels D.7.3. k∥-resolved Material Properties D.7.4. Evaluation of the Work Functions and Electron Affinities D.7.5. Verification of the Work Function Calculation 4. Discussion 5. Ongoing Work and Possible Extensions 6. Summary Bibliography List of Figures List of Tables Acknowledgements Selbstständigkeitserklärung Curriculum Vitae Scientific Contributions

This paper contains brief introduction into modeling and simulation using Discrete Event Specified System (DEVS) formalism. It defines basic models (atomic and coupled DEVS) and shows how they are simulated. Examples of derived DEVS formalism like parallel DEVS or DESS are also presented. It is described how to create DEVS models using graphic modeling software and advantages and disadvantages of this approach. A short summary of known programs are also covered. Storing models in the XML language, validation of XML document and transformation capabilities by XSLT are discussed. The main section is dedicated to the design of a graphic editor for simulation models inspired by design patterns including classes for canvas, model representation, export module interface and main application. The XML document used for storing DEVS models and simple DEVS simulator are also described. Implementation section presents used programming libraries, reasons why they have been used and their advantages and disadvantages. Paper ends with an example of a simple DEVS model created by implemented graphic editor for simulation DEVS models.

This MSc Thesis is focused on the multimodeling area, especially on the cooperation of the C++ language and the Prolog language. The recent research is established on my semester study, which also dealt with the multimodeling area. During this research a prototype of interconnection library for cooperation of above mentioned programming languages was developed. This prototype of the library was finished within the scope of this thesis and some case-studies were created, too, using also another simulation library - SIMLIB/C++. These case-studies have their focus in the problems of artificial intelligence. The main benefit of this thesis is the confrontation of methods with and without using artificial intelligence.

Crime and Punishment in the Eyes of Cesare Beccaria An Analysis of an Enlightenment Penal Law Reform The Ph.D. dissertation is centred around a relatively concise, but extremely influential book: Cesare Beccaria's treatise On Crimes and Punishments (Dei delitti e delle pene). This work, first published in 1764, sums up in a clear, yet intellectually penetrating way all the main Enlightenment principles of a complex penal law reform. In its time, the book was not only of great philosophical importance and it not only changed the way western societies perceived crime and punishment, but it also served as a concrete guideline for various penal law reformers. It is therefore by no means an overstatement to say that it caused a true paradigm shift in both legal and moral philosophy. The main aim of the thesis is to give a legal-philosophical account of Beccaria's thoughts on crime and punishment, to examine their historical as well as moral background and show the actual impact they had on the legislation of many different, mainly European states. The first chapters of the dissertation are focused on Beccaria's life, his intellectual background and his formative influences (particularly the French, English and Scottish Enlightenment, the social contract theory, utilitarianism, Montesquieu's thoughts on penal...