No description available.

Submitted by Rosivalda Pereira (mrs.pereira@ufma.br) on 2017-08-21T18:33:57Z No. of bitstreams: 1 JosedlaCarvalho.pdf: 1669581 bytes, checksum: c58bd81c031e497afc020d8301a20f5f (MD5) / Made available in DSpace on 2017-08-21T18:33:57Z (GMT). No. of bitstreams: 1 JosedlaCarvalho.pdf: 1669581 bytes, checksum: c58bd81c031e497afc020d8301a20f5f (MD5) Previous issue date: 2016-08-31 / This is an anlisys about the cause and effects of the judicialization attempted towards the social and racial affirmative action police used in the graduation courses at UFMA, from a relational reflection upon the field in dispute, enfolding the candidates, the commission of enrollment validation, the superior administration of the institution, the and the Federal Justice of the State. Some analytical categories, black person, affirmative actions, institutional racism, hetero-identification and judicialization, are disposed in order to understand these processes enlightened by the peculiarities of the ethnic and racial relations in Brasil. I also resort to a careful documental analysis about the public notices that regulate the entrance in the higher education and the legal demands protocoled by the Union Public Defence, in Maranhão, against UFMA, due to the administrative acts of the Commission of Enrolment Validation, making a counterpoint between the formal prediction of rights and its efficacy for the historical excluded segments of the population, with the intention of identifying how much this judicialization compromises the democratization process of accessing the higher education. For that, I establish a dialogue between institutional racism and social-racial inequalities, pointing out the affirmative actions as a feasible way to minimize the distances between black person and Brazilian educational system. / Esta é uma análise sobre as causas e efeitos da judicialização intentada à política de cotas sociorraciais, adotadas para o ingresso nos cursos de graduação da UFMA, a partir de uma reflexão relacional do campo em disputa, envolvendo, os candidatos, a Comissão de Validação de Matrícula, a administração superior da instituição e a Justiça Federal do Estado. Algumas categorias analíticas como, negro, ação afirmativa, racismo institucional, heteroidentificação e judicialização, são acionadas com a finalidade de compreender esses processos à luz das peculiaridades das relações étnico raciais no Brasil. Recorro, também, a uma análise documental criteriosa sobre os editais que normatizam o ingresso ao ensino superior e as demandas judiciais protocoladas pela Defensoria Pública da União, no Maranhão, contra a UFMA, em razão dos atos administrativos da Comissão de Validação de Matrícula, fazendo um contraponto entre a previsão formal de direitos e a sua eficácia para os segmentos historicamente excluídos da população, na intenção de identificar, em que medida essa judicialização compromete o processo de democratização do acesso ao ensino superior. Para tanto, estabeleço um diálogo entre racismo institucional e desigualdades sociorraciais, apontando as ações afirmativas como um caminho viável para minimizar as distâncias entre negros e não negros no sistema educacional brasileiro.

This thesis is written with the intent to draw attention towards two of the gendernorms that affects us all while living in today’s society. By looking closer to the books, songs and stories children have access to and by both observing and interviewing teachers, I try to raise the knowledge of how the heteronorm and cisnorm are being challenged in the two preschools participating in this thesis. Both preschools are located in Sweden and the two persons I have interviewed are both preschoolteachers. I analyze the result of my research from a perspective that criticizes societal norms and has roots in both French post structuralism and queer theory. I also put my result in comparison to previous studies done by other researchers. My result shows that most of the books, songs and stories that children have access to in preschool are cisnormative and heteronormative and one of the teachers I have interviewed say that they don’t have enough knowledge about norms while the other teacher says that they have gotten enough knowledge about norms through in-service training. This thesis verifies, through my presentations of previous research and my own research, that our society is steeped in these two norms.

Complex-oxides have seen an enormous amount of attention in the realm of Condensed Matter Physics and Materials Science/Engineering over the last several decades. Their ability to host a wide variety of novel physical properties has even caused them to be exploited commercially as dielectric, metallic and magnetic materials. Indeed, since the discovery of high temperature superconductivity in the “Cuprates” in the late 1980’s there has been an explosion of activity involving complex-oxides. Further, as the experimental techniques and equipment for fabricating thin films and heterostructures of these materials has improved over the last several decades, the search for new and more exotic properties has intensified. These properties stem from the interfaces formed by depositing these materials onto one another. Whether it be interfacial strain induced by the mismatch between the crystal structures, modified exchange interactions, or some combination of these and other interactions, thin films and heterostuctures provide an invaluable tool the modern condensed matter community. Simply put, a “complex-oxide” is any compound that contains Oxygen and at least two other elements; or one atom in two different oxidation states. Transition Metal Oxides (TMO’s) are a subset of complex-oxides which are of particular interest because of their strong competition between their charge, spin and orbit degrees of freedom. As we progress down the periodic table from 3d to 4d to 5d transition metals, the crystal field, electron correlation and spin-orbit energies become more and more comparable. Therefore, TMO thin films and heterostructures are indispensable to the search for novel physical properties. KTaO3 (KTO) is a polar 5d TMO which has been investigated for its high-k dielectric properties. It is a band insulator with a cubic perovskite crystal structure which is isomorphic to SrTiO3 (STO). This is important because non-polar STO is famous for forming a highly mobile, 2-Dimensional Electron Gas (2DEG) at the hetero-interface with polar LaAlO3 (LAO) as a result of the so-called “polar catastrophe”. Here, I use this concept of polarity to ask an important question: “What happens at hetero-interfaces where two different polar complex oxides meet?” From this question we propose that a hetero-interface between two polar complex-oxides with opposite polarity (I-V/III-III) should be impossible because of the strong Coulomb repulsion between the adjacent layers. However, we find that despite this proposed conflict we are able to synthesize KTO thin films on (110) oriented GdScO3 (GSO) substrates and the conflict is avoided through atomic reconfiguration at the hetero-interface. SrRuO3 (SRO) is a 4d TMO, and an itinerant ferromagnet that is used extensively as an electrode material in capacitor and transistor geometries and proof-of-concept devices. However, in the thin film limit the ferromagnetic transition temperature, TC, and conductivity drop significantly and even become insulating and lose their ferromagnetic properties. Therefore, we ask “Are the transport properties of SRO thin films inherently inferior to single crystals, or is there a way to maintain and/or enhance the metallic properties in the thin film limit?” We have fabricated SRO thin films of various thickness on GSO substrates (tensile strain) and find that all of our samples have enhanced metallic properties and even match those of single crystals. Finally, we ask “Can these enhanced metallic properties in SRO thin films allow us to observe evidence of a topological phase without the complexity of off-stoichiometry and/or additional hetero-structural layers?” Recent reports of oxygen deficient EuO films as well as hetero-structures and superlattices of SRO mixed with SrIrO3 or La0.7Sr0.3MnO3 have suggested that a magnetic skyrmion phase may exist in these systems. By measuring the Hall resistivity, we are able to observer a topological Hall effect which is likely a result of a magnetic skyrmion. We find that of the THE exists in a narrow temperature range and the proposed magnetic skyrmions range in size from 20-120 nm. Therefore, the SRO/GSO system can provide a more viable means for investigating magnetic skyrmions and their fundamental interactions.

This Thesis aimed the synthesis of new metal complexes with triazenido ligands and triazenes chains directly linked to ferrocene fragment by a new synthesis methodology. The complex bis-[1,3-bis(2-biphenyl)triazenido-κN1]mercury(II) was synthesized, melting point 222–224 °C and yield 82 %, characterized by IR, UV-Vis, 1H e 13C RMN, elemental analysis, mass spectrometry by ESI(+)TOF, single crystal x-ray diffraction. The triazenes 1,1’-bis[1-phenyl-3(H)triazene]ferrocene (Compound 1) and 1,1’-bis(benzo-1,2,3-triazol-1-phenyltriazene)ferrocene (Compound 6) were synthesized by ferrocene metalation with BuLi and substitution by correspondent azide, with yields higher than 70 %, melting points 151 and 160 °C, respectively, were characterized by UV-Vis (Compound 1), 1H and 13C NMR, elemental analysis, IE-MS (Compound 1) ESI(+)TOF (Compound 6), single crystal x-ray diffraction (Compoound 1), powder x-ray diffraction, scanning electron microscopy (SEM) and thermogravimetric analysis. Starting from Compound 1 the following heterobimetallic complexes were sinthesized: {[Fe(C5H4NNNH5C6)]2Ni2} (Compound 2), {[Fe(C5H4NNN(H)H5C6)]2Cl2Cu2} (Compound 3 with protonated triazene), {[Fe(C5H4NNNH5C6)]2[Cu(PPh3)2]2} (Compound 4), {[Fe(C5H4NNN(H)H5C6)]2Cu4} (Compound 5). Compounds 6 and 7 didn’t yields suitable single crystals for X-ray diffraction, but based on the MS-ESI(+)TOF and 1H NMR analysis the respective structures based on 1,1’-bis[1-phenyl-3(H)triazene]ferrocene could be predicted. The new triazenes synthesis by methodology under study showed good yields and can be done in two steps. The compounds purification is simple by only extraction with organic solvent and water precipitation followed by filtration enabling the development of further new triazenes including other metallocenes and other azides. / O objetivo desta tese foi a síntese de novos complexos metálicos envolvendo ligantes triazenidos e triazenos diretamente ligados ao ferroceno. Foi sintetizado o complexo bis-[1,3-bis(2-bifenil)triazenido-κN1]mercúrio(II) com ponto de fusão 222–224 °C e rendimento de 82 %, caracterizado por infravermelho, UV-Vis, 1H e 13C RMN, análise elementar, espectroscopia de massas por ESI(+)TOF, difração de raios X em monocristal. Os triazenos 1,1’-bis[1-fenil-3(H)triazeno]ferroceno (Composto 1) e 1,1’-bis(benzo-1,2,3-triazol-1-feniltriazeno)ferroceno (Composto 6) foram sintetizados por metalação via BuLi, seguida da substituição pela azida correspondente com rendimentos superiores a 70 %, com pontos de fusão de 151 e 160 °C, respectivamente, foram caracterizados por UV-Vis (Composto 1), 1H e 13C RMN, análise elementar, espectroscopia de massas por IE (Composto 1) ESI(+)TOF (Composto 6), difração de raios X em monocristal (Composto 1), difração de raio X de pó, microscopia eletrônica de varredura e análise termogravimétrica. A partir do Composto 1 foram sintetizados os complexos multinucleares: {[Fe(C5H4NNNH5C6)]2Ni2} (Composto 2), {[Fe(C5H4NNN(H)H5C6)]2Cl2Cu2} (Composto 3 com triazeno protonado), {[Fe(C5H4NNNH5C6)]2[Cu(PPh3)2]2} (Composto 4), {[Fe(C5H4NNN(H)H5C6)]2Cu4} (Composto 5). O Composto 6 e o Composto 7 não resultaram em cristais adequados para medida, com as análises por EM-ESI(+)TOF e 1H RMN pode-se fazer uma predição da estrutura baseada nas estruturas com o 1,1’-bis[1-fenil-3(H)triazeno]ferroceno. A síntese de novos triazenos pela metodologia estudada possui bom rendimento e é realizada em apenas duas etapas, a purificação dos triazenos é simples, envolvendo apenas a extração com solvente orgânico e a precipitação em água seguida de filtração possibilitando o desenvolvimento de novos triazenos com outros metalocenos e outras azidas.

L'objectif de ce travail a été de comprendre les mécanismes menant à la formation de Nitrure de Gallium monocristallin ( GaN ) sur substrat de silicium par croissance cristalline en configuration Vapeur-Liquide-Solide (VLS), à partir d'une phase liquide de gallium, dans la perspective d'un amélioration ultérieure de la qualité des couches hétéro-épitaxiales de GaN sur silicium destinées aux composants pour l'électronique de puissance.Notre étude s'est concentrée autour de la croissance sur couche-germe 3C-SiC déposée par CVD sur silicium, l'ajout de cette couche intermédiaire permettant d'obtenir des couches de GaN en compression, tout en évitant les interactions chimiques entre le silicium du substrat et le Ga liquide.Une étude expérimentale paramétrique a mis en lumière la sensibilité de la croissance du GaN vis à vis des principaux paramètres de croissance ( température, flux de précurseur azoté ), et en particulier l'influence de ces paramètres sur les proportions des quantités formées des deux polytypes les plus stables du GaN ( 3C-GaN et 2H-GaN ). Nous avons montré, par exemple, qu'une simple variation de 50°C de la température conduit à une variation importante du mode de nitruration des gouttes de gallium, et à un changement radical du polytype majoritaire du GaN formé. Nous avons aussi montré que la croissance cristalline du GaN est très sensible à l'état de surface de la couche-germe CVD de 3C-SiC hétéro-épitaxial. Celle-ci est composée d'une coalescence d'îlots de SiC. Cette morphologie particulière impose sa géométrie quasi-périodique à la distribution des gouttes de gallium et peut favoriser la nucléation du GaN en périphérie des gouttes dans les premiers stades de la croissance.A partir des résultats de cette exploration préliminaire, nous avons pu identifier des conditions de croissance permettant de réaliser une couche quasi-continue de GaN par coalescence de cristallites résultant de la nitruration de gouttes de gallium liquide submicroniques / The aim of this work was to understand the mechanisms that lead to the formation of monocrystalline gallium nitride ( GaN ) on silicon substrate by crystalline growth with the Vapor-Liquid-Solid (VLS) configuration, from a gallium liquid phase, in the perspective of an ulterior improvement of the GaN hetero-epitaxial layers quality on silicon intended for power electronics components. Our study focused on the growth on 3C-SiC seed-layer deposited by CVD on silicon, this layer adding permits to obtain GaN layers in compression with avoiding any interactions between the silicon substrate and the liquid gallium. A parametric experimental study has enlightened the sensitivity of the GaN growth with the growth conditions (the temperature, the flux of the nitrogen precursor) and particularly the influence of the parameters on the ratio of formed quantities of the two most stable GaN polytypes (3C-GaN ou 2H-GaN). We have shown, for example, that a simple variation of 50°C of the temperature permits an important variation of the gallium droplets nitriding mod, and of the GaN preferential polytype. We also showed that the growth of GaN is very sensitive to surface state of the 3C-SiC CVD hetero-epitaxial seed-layer. This one is composed of some SiC coalescing islands. This peculiar morphology imposes its quasi-periodic geometry at the gallium droplet distribution and can favor the GaN nucleation at the droplet periphery during the first stage of the growth. From the results of this preliminary exploration, we were able to identify some growth conditions allowing to obtain an almost continued layer of GaN resulting of the nitriding of submicronic liquid gallium droplets

We demonstrate a novel and ready to prepare thermoreversible hetero Diels–Alder dilinker on the basis of dithiooxalates, enabling the mild, rapid and catalyst-free linkage of diverse diene species under ambient conditions for applications in the fields of, for example, modular ligation, self-healing or recyclable materials and surface modification amongst others. The linker was studied using quantum chemical calculations, and experimentally in small molecular reactions via UV/Vis spectroscopy, mass spectrometry and NMR as well as in step-growth polymerizations with diene-difunctional building blocks – characterized via (temperature dependent) SEC and HT NMR – as an example for efficient polymer ligation.

Organic transistors with vertical current transport like the Permeable Base Transistor (PBT) show a high performance while allowing for an easy fabrication on the device level. For a simple implementation on a circuit level, ambipolar transistors, providing the functionality of n-type as well as p-type devices, have a benefit for complementary logic. This requires transistors where electrons and holes are present. Here, we investigate a potential concept of bipolar current transport in PBTs. In our device structure, we use the base electrode to control the current flow, but also to investigate the charge carrier transport. The ambipolar organic PBT achieves a charge carrier transmission of 88% and a current density above 200mA=cm². Additionally, we show that recombination near the base is required in an ambipolar PBT for a good performance.

Silicon Germanium (Si1-xGex) is an alloy semiconductor that has caught considerable attention of the semiconductor industry in the past decade. Effects of strain in thin films are the reason for this. Strain leads to considerable deformation of bands providing enhanced mobility for both electrons and holes. Another important aspect of SiGe is the reduction of band gap. This makes band gap engineering feasible in all silicon technology. Yet another attractive point is the adaptability and compatibility of SiGe to silicon process technology.In CMOS circuits the p-channel MOSFET needs more than double the area of the n-channel MOSFET due to the lower mobility of holes in silicon. Hence a p-channel hetero MOSFET (HMOSFET) is chosen as the object of this dissertation.A simple general device structure that can provide considerable enhancement in performance, compared to a conventional MOSFET, is selected. A one dimensional Poisson equation is solved for this hetero junction device. Using these results an Excel spreadsheet is used as a tool to design a complete analytical program that can provide internal as well as terminal parameters of this device. The analytical program is tested by comparing the results with ISE-TCAD numerical device simulator results. The results were found to match very well. This analytical program yields results in a fraction of the time compared to numerical programs. For the device of choice variable parameters are identified. It is found that these parameters are interconnected in many ways and trade offs between them need to be applied.From the front end of the spreadsheet input parameters can be varied and parameters like potentials, hole density and terminal characteristics can be plotted very easily while simultaneously computing other parameters like threshold voltage and saturation current.The main contribution of this dissertation research is(1) Development of a very efficient and accurate analytical program to interactively design and optimize a p-channel HMOSFET(2) A detailed understanding and explanation of various design parameters, their implications, interdependency and trade offs(3) Study and explanation of certain special characteristics ofp-HMOSFET like dual threshold voltage, low off-currents, structural limitations etc.

<p>Doktorska disertacija naslovljena Lik stranca u srpskom romanu 19. veka imagolo&scaron;kim istraživanjem identifikuje i osvetljava dominantne obrasce opisivanja drugoga (hetero-slika) kroz reflektovanje sopstenog identiteta (auto-slika) u razvojnom putu od staroga, preko novoga, do modernog srpskog romana. Slika stranca u srpskom romanu 19. veka kroz vreme istovremeno prikazuje i sam razvoj srpskog romana kao književne vrste od skromnih početaka, do najvi&scaron;ih dostignuća. Slika stranca se kroz faze rada usložnjava i postaje od pukoga stereotipa, originalan autorski izraz stvaraoca, koji osim književne, ima i kulturolo&scaron;ku, sociolo&scaron;ku, psiholo&scaron;ku i političku vrednost. Nudeći svoj uspostavljeni sistem kao obrazac, novo čitanje klasika koje se u ovom radu preduzima predstavlja istraživanje koje sažima i reinterpretira, revalorizuje i ponovo otkriva do sada zapostavljene, a u ovom radu potvrđene vrednosti srpskoga romana 19. veka. Rezultati koje takav pristup daje, mogu biti primenjeni i van okvira nauke o književnosti. Njihova multidisciplinarnost proizlazi iz čitavih studija o karakterima, nacijama i pojedincima, proiza&scaron;lih iz devetnaestovekovnog konteksta stvarnosti prenesene u srpski roman. Ovi rezultati kao relevantni mogu biti primenjeni u savremenim istoriografskim, politikolo&scaron;kim i sociolo&scaron;kim istraživanjima celokupne srpske devetnaestovekovne kulture, jer pružaju savremen i unikatan pristup složenoj problematici dru&scaron;tvenih procesa koji su u 19. započeti (npr, stvaranje nacija, izmi&scaron;ljanje tradicija), a na Balkanu im se ni danas ne vidi kraj.</p>