Heart Failure is a common long term progressive and serious medical condition with high mortality and costly health services in the UK. By the year of 2010, there were around 90,000 people in the UK suffered from heart failure and in 2008, 10,000 heart failure patients were recorded death. Treatments of heart failure cost the National Health Service around £625 million every year. Although heart failure is highly pro-arrhythmic, the underlying mechanisms of the pro-arrhythmic effects of heart failure are not completely understood. Heart failure is associated with electrical remodelling of the properties and kinetics of some ionic channels responsible for the action potential of cardiac cells. However, it is still unclear whether this ionic channel remodelling can account for the pro-arrhythmic effects of heart failure as the complexity of the heart impedes a detailed experimental analysis. Biophysically detailed computational models have been developed in the last two decades, enabling the evaluation of experimental data. The aim of this thesis is to use arrhythmic mechanisms to investigate the pro-arrhythmic effects of heart failure-induced remodelling on the cardiac action potentials and Purkinje-ventricular junction. Single canine Purkinje fibre and ventricular cell models were developed to investigate the effects of heart failure-remodelled ionic channel currents on cell action potentials and identify optimal options for the potential clinical treatments. One-dimensional strand tissue model and three-dimensional wedge model were developed to further explore the effects of heart failure-induced remodelling in propagation of the canine Purkinje fibre, ventricle and Purkinje-ventricular junction. It was found that heart failure-induced remodelling on the Purkinje fibre and ventricle reduced the conduction safety and increased tissue’s vulnerability to the genesis of the unidirectional conduction block, especially at the Purkinje-ventricular junction, which may cause conduction failure, re-entry or both.

Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. In this thesis, radiation effects of 4H-SiC bipolar devices, circuits and dielectrics for SiC are investigated under various radiation types. We have demonstrated for the first time the radiation hardness of 4H-SiC logic circuits exposed to extremely high doses (332 Mrad) of gamma radiation and protons. Comparisons with previously available literature show that our 4H-SiC bipolar junction transistor (BJT) is 2 orders of magnitude more tolerant under gamma radiation to existing Si-technology. 4H-SiC devices and circuits irradiated with 3 MeV protons show about one order of magnitude higher tolerance in comparison to Si. Numerical simulations of the device showed that the ionization is most influential in the degradation process by introducing interface states and oxide charges that lower the current gain. Due to the gain reduction of the BJT, the voltage reference of the logic circuit has been affected and this, in turn, degrades the voltage transfer characteristics of the OR-NOR gates. One of the key advantages of 4H-SiC over other wide bandgap materials is the possibility to thermally grow silicon oxide (SiO2) and process device in line with advanced silicon technology. However, there are still questions about the reliability of SiC/SiO2 interface under high power, high temperature and radiation rich environments. In this regard, aluminium oxide (Al2O3), a chemically and thermally stable dielectric, has been investigated. It has been shown that the surface cleaning treatment prior to deposition of a dielectric layer together with the post dielectric annealing has a crucial effect on interface and oxide quality. We have demonstrated a new method to evaluate the interface between dielectric/4H-SiC utilizing an optical free carrier absorption technique to quantitative measure the charge carrier trapping dynamics. The radiation hardness of Al2O3/4H-SiC is demonstrated and the data suggests that Al2O3 is better choice of dielectric for devices in radiation rich applications. / <p>QC 20170119</p>

The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.

Orientadores: Lea Rodrigues Simioni,Yoko Oshima Franco / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Ciencias Medicas / Made available in DSpace on 2018-08-07T13:41:21Z (GMT). No. of bitstreams: 1 Bueno_LilianGobbodeFreitas_M.pdf: 986839 bytes, checksum: 048ec75c1469d547de311f325aab2cc3 (MD5) Previous issue date: 2006 / Resumo: Manganês, um bloqueador neuromuscular com atividades pré e pós-sinápticas, foi utilizado neste trabalho com o objetivo de estudar a neurotoxicidade e miotoxicidade induzida pelos venenos das serpentes Crotalus durissus terrificus (Cdt) e Bothrops jararacussu (Bjssu) em preparações biventer cervicis de pintainho (BCp). O pré-tratamento das preparações com Mn2+ (0,66 e 1,6 mM) não impediu o bloqueio neuromuscular induzido pelo veneno de Cdt, reduziu parcialmente a resposta contraturante à adição exógena de ACh, mas não à de KCl. Embora o bloqueio neuromuscular induzido pelo veneno de Bjssu seja irreversível, o pré-tratamento com ambas as concentrações de Mn2+ (0,66 e 1,6 mM) tornou o bloqueio parcialmente reversível após a lavagem das preparações com solução de Krebs, e somente nas preparações pré-tratadas com 1,6 mM Mn2+ houve redução do bloqueio da resposta contraturante à adição exógena de ACh (p<0,05). Os tipos de miotoxicidade induzidos pelos venenos de Cdt e Bjssu interferiram diferentemente na resposta contrátil. Em preparações pré-tratadas com Mn2+ (1,6 mM) houve redução parcial da porcentagem de dano muscular e da atividade miotóxica (CC, U/L) induzida por ambos os venenos. Os resultados desta pesquisa indicam que: Mn2+ interfere na contratura induzida pela ACh nos receptores nicotínicos; Mn2+ não evitou a neurotoxicidade do veneno de Cdt, mas reduziu parcialmente sua miotoxicidade in vitro, por sua ação estabilizante da membrana muscular; Mn2+ reduziu parcialmente a miotoxicidade e o bloqueio neuromuscular induzido pelo veneno de Bjssu. A dupla ação do Mn2+, pré- e pós-sináptica, é considerada útil para o estudo dos venenos de serpentes, uma vez que a maioria desses venenos apresenta também estas ações. Além disso, com a utilização deste cátion foi possível resgatar a coerência entre a interpretação dos resultados experimentais e clínicos / Abstract: In this study, we examined the effects of Mn2+, a neuromuscular blocker with pre and postsynaptic actions, on the neurotoxicity and myotoxicity induced by Crotalus durissus terrificus and Bothrops jararacussu venoms in chick biventer cervicis preparations. Pretreating the preparations with Mn2+ (0.66 or 1.6 mM) did not affect the blockade induced by C. d. terrificus venom or KCl-induced contractures, but partially reduced ACh-induced contractures. On the other hand, both concentrations of Mn2+ partially prevented the blockade induced by B. jararacussu venom (seen after washing the preparations with Krebs solution), whereas only 1.6 mM Mn2+ significantly restored ACh-induced contractures. Pretreatment with Mn2+ (1.6 mM) partially prevented the muscle damage and the release of creatine kinase induced by both venoms. These results show that Mn2+ did not prevent the neurotoxicity of Cdt venom, but partially reduced its myotoxicity, whereas this metal partially attenuated the myotoxicity and neuromuscular blockade caused by B. jararacussu venom. The pre- and postsynaptic actions of Mn2+ may be useful for studying snake venoms that show one or both of these activities / Mestrado / Mestre em Farmacologia

Orientador: Guillermo Gerardo Cabrera Oyarzún / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-18T12:28:58Z (GMT). No. of bitstreams: 1 Fernandes_ImaraLima_M.pdf: 9006612 bytes, checksum: accaacf2ec8bab2326612b97e18b9b16 (MD5) Previous issue date: 2011 / Resumo: Neste trabalho, apresentamos um estudo do tunelamento e do transporte quântico em sistemas mesoscópicos, particularmente em junções de tunelamento magnéticas, visando esclarecer a polarização magnética da corrente de tunelamento. Nos dispositivos de tunelamento, um filme isolante é crescido entre os eletrodos ferromagnéticos. Nesse sistema a condutância é controlada pelo coeficiente de transmissão do efeito túnel. Nos metais de transição (Fe, Co, Ni), as bandas s, p e d contribuem para a condução eletrônica, entretanto a magnetização deve-se à polarização das bandas d. Resultados experimentais mostram que essa polarização da corrente pode ser muito diferente da polarização do volume no nível de Fermi, podendo até estar invertida. Qualitativamente sabe-se que os elétrons da banda d apresentam menor probabilidade de tunelamento do que os elétrons s ou p. Os elétrons de condução do tipo s são representados por ondas planas com vetores de onda pequenos (centro da zona de Brillouin). Já os elétrons d possuem maior massa efetiva e um caráter localizado, portanto, são representados por pacotes de muitas componentes de ondas planas com vetores de onda maiores. Estudamos o tunelamento desses elétrons por barreiras de potencial que representam o material isolante entre eletrodos metálicos. Propomos um modelo simples para a corrente de tunelamento e estimamos o efeito da magnetoresitência / Abstract: This work introduces a detailed study of tunneling and quantum transport in mesoscopic systems, particularly in tunneling magnetic junctions, to understand the magnetic polarization of the tunneling current. These systems consist of two ferromagnetic metal layers separated by a thin insulating barrier layer. The conductance is controlled by the transmission coeficient of the tunnel effect. In the transition metal (Fe, Co, Ni), the bands s, p and d contribute to the electronic conduction, however, to the magnetization only the d-band contributes. Experimental results show that the current polarization may be different of the bulk polarization in the Fermi level and may be reversed. Qualitatively it is known that tunneling probability of the d-like electrons is lower than the s-like and p-like electrons. The s-electrons are represented by wave planes with small wave vector (center of the Brillouin zone). Since the d-electrons have higher effective mass and they are localized states, they are represented by wave packet with many components of wave planes with larger wave vectors. We investigate the tunneling of these electrons through potential barriers, which represent the insulating layer between the ferromagnetic electrodes. We propose a simple model for the tunneling current and estimated the effect of the magnetoresistance / Mestrado / Física da Matéria Condensada / Mestra em Física

The contractile state of microcirculatory vessels is a major determinant of the blood pressure of the whole systemic circulation. Continuous bi-directional communication exists between the endothelial cells (ECs) and smooth muscle cells (SMCs) that regulates calcium (Ca2+) dynamics in these cells. This study presents theoretical approaches to understand some of the important and currently unresolved microcirculatory phenomena. Agonist induced events at local sites have been shown to spread long distances in the microcirculation. We have developed a multicellular computational model by integrating detailed single EC and SMC models with gap junction and nitric oxide (NO) coupling to understand the mechanisms behind this effect. Simulations suggest that spreading vasodilation mainly occurs through Ca2+ independent passive conduction of hyperpolarization in RMAs. Model predicts a superior role for intercellular diffusion of inositol (1,4,5)-trisphosphate (IP3) than Ca2+ in modulating the spreading response. Endothelial derived signals are initiated even during vasoconstriction of stimulated SMCs by the movement of Ca2+ and/or IP3 into the EC which provide hyperpolarizing feedback to SMCs to counter the ongoing constriction. Myoendothelial projections (MPs) present in the ECs have been recently proposed to play a role in myoendothelial feedback. We have developed two models using compartmental and 2D finite element methods to examine the role of these MPs by adding a sub compartment in the EC to simulate MP with localization of intermediate conductance calcium activated potassium channels (IKCa) and IP3 receptors (IP3R). Both models predicted IP3 mediated high Ca2+ gradients in the MP after SMC stimulation with limited global spread. This Ca2+ transient generated a hyperpolarizing feedback of ~ 2-3mV. Endothelium derived hyperpolarizing factor (EDHF) is the dominant form of endothelial control of SMC constriction in the microcirculation. A number of factors have been proposed for the role of EDHF but no single pathway is agreed upon. We have examined the potential of myoendothelial gap junctions (MEGJs) and potassium (K+) accumulation as EDHF using two models (compartmental and 2D finite element). An extra compartment is added in SMC to simulate micro domains (MD) which have NaKα2 isoform sodium potassium pumps. Simulations predict that MEGJ coupling is much stronger in producing EDHF than alone K+ accumulation. On the contrary, K+ accumulation can alter other important parameters (EC Vm, IKCa current) and inhibit its own release as well as EDHF conduction via MEGJs. The models developed in this study are essential building blocks for future models and provide important insights to the current understanding of myoendothelial feedback and EDHF.

Orientador: Nelson Adami Andreollo / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Ciências Médicas / Made available in DSpace on 2018-08-26T20:48:16Z (GMT). No. of bitstreams: 1 CoelhoNeto_JoaodeSouza_D.pdf: 3555108 bytes, checksum: 8ec52e1b0f88869350f9b5b3aad97a23 (MD5) Previous issue date: 2015 / Resumo: A esofagogastrectomia total seguida de esofagocoloplastia é um procedimento cirúrgico complexo com alta morbimortalidade. Suas indicações são limitadas a algumas condições, principalmente nas ressecções radicais de grandes tumores da transição esôfago-gástrica que invadem ambas as vísceras e tumores esofágicos em pacientes com gastrectomias prévias. Objetivo: Analisar as indicações e os resultados das esofagogastrectomias totais seguidas de esofagocoloplastias nas neoplasias do esôfago distal e da transição esôfago-gástrica realizadas no Hospital de Clínicas da Faculdade de Ciências Médicas da UNICAMP no período de 1989 a 2013. Métodos: Estudo descritivo longitudinal retrospectivo, com os indivíduos submetidos à esofagogastrectomia total seguida de esofagocoloplastia. As variáveis foram obtidas da revisão retrospectiva dos prontuários médicos. Para a análise de sobrevida foi utilizado o método de estimação de Kaplan-Meier. Para as comparações das distribuições de sobrevida foi utilizado o teste de Wilcoxon (Breslow) ou Log Rank. Casuística: Vinte pacientes foram submetidos a esofagogastrectomia total seguida de esofagocoloplastia no Hospital de Clínicas da UNICAMP. Resultados: Em todos os casos, a técnica cirúrgica empregada consistiu em laparotomia mediana e cervicotomia lateral esquerda, sendo a esofagectomia realizada por via transhiatal, associado a linfadenectomia D2. Nas reconstruções foram realizadas nove esofagocoloduodenoplastias e as 11 demais foram esofagocolojejunoplastias em Y de Roux. A via de transposição preferencial foi a transmediastinal (65%). Três casos eram estadios I/II (15%), 15 (85%) eram estadios III/IV, refletindo o diagnóstico tardio destes tumores. A mortalidade peri-operatória foi de cinco pacientes (25%): uma mediastinite secundária à necrose do cólon transposto (5%), uma celulite abdominal secundária a infecção de ferida operatória, uma broncopneumonia grave, um choque irreversível e uma sepse associada a fístula da anastomose colo-jejunal. Não houve óbito no intra-operatório. Quatro pacientes faleceram no primeiro ano de pós-operatório, sendo três (15%) deveram-se a recidiva tumoral e um (5%) secundário a broncopneumonia. A sobrevida global estimada foi de 52,4% em um ano, de 30,6% em três anos e de 22,9% em cinco anos. A sobrevida mediana foi de 12,7 meses. Conclusão: A esofagogastrectomia total associada à esofagocoloplastia é procedimento de elevada morbimortalidade, portanto necessitando indicação precisa. Evidentemente, pacientes corretamente selecionados beneficiam-se da cirurgia. É um procedimento que visa o aumento da sobrevida e a melhora da qualidade de vida / Abstract: Introduction: Total esophagogastrectomy with colon interposition for esophageal replacement is a complex surgical procedure and has high morbidity and mortality ratios. Indications for surgery are limited to some condition when it is necessary to resect both viscera stomach and esophagus or when de stomach is not available due to previous gastrectomy. Objectives: Analyze the indications and the outcomes of total esophagogastrectomy in neoplasms of esophagus and esofagogastric junction performed in State University of Campinas's Hospital between 1989 and 2013. Methods: It is a longitudinal retrospective descriptive study. Medical records were reviewed to obtain data about pre and postoperative treatment. For descriptive analysis and estimation of the survival model it was used Kaplan-Meier curve and Wilcoxon (Breslow) or Log Rank tests. Casuistic: From 1989 to 2013, 20 patients underwent total esophagogastrectomy followed by esophagocoloplasty in the University Hospital Results: In all cases, were performed left neck incision, transhiatal esophagectomy associated to D2 lymphadenectomy. Reconstructions were performed in 9 cases by esophacoloduodenoplasty and esophagocolojejunoplasty in 11 cases (after 2004) in order to avoid alkaline reflux. The colon interposition grafts were performed thru the mediastinum in 65% of the patients. Three cases were stages I / II (15%), while 17 (85%) cases were stages III / IV, reflecting the delayed diagnosis of these tumors. The operative mortality occurred in five patients (25%): one mediastinitis secondary to necrosis of the transposed colon, one cellulites secondary to abdominal wound infection, one severe bronchopneumonia, one severe shock in the immediate post operatory day and one sepsis associated with abdominal colojejunostomy anastomotic leak. Four patients died in the first year after surgery, being three due to tumor recurrence (15%) and one secondary to bronchopneumonia (5%). The estimated overall survival was 52.4% in one year, 30.6% in three years and 22.9% in five years. The median survival was 12.7 months. Conclusion: The total esophagogastrectomy associated to esophagocoloplasty presented high morbidity and mortality, thus requiring precise indication, and of course, properly selected patients benefit greatly from surgery, with the risk-benefit ratio acceptable, improving their quality of life and survival / Doutorado / Fisiopatologia Cirúrgica / Doutor em Ciências

The increasing demand of renewable energy is the big driving force for the research and development of more efficient solar energy conversion solutions. Solar cells, which use the photovoltaic effect to convert the photon energy to electrical current, are an important solar energy conversion technique. One solar cell technology is thin-film solar cells. Thin-film solar cells use an absorption layer with a direct band gap. A direct band gap has the advantage that the photons will penetrate less deep until a photoexcitation occur compared to semiconductors with an indirect band gap (e.g. silicon). For this reason the thin-film solar cells can be made very thin.CIGS is a common thin-film solar cell absorber material containing copper (Cu), indium (In), gallium (Ga) and selenium (Se). One objective of this work has been to determine element concentrations of CIGS absorption layers from sample measurements. The GGI ratio determines the band gap, which is an important factor for optimising the efficiency of the solar cell.1 The copper vacancy is the main acceptor dopant in CIGS. The Cu concentration has shown to be important for the efficiency and for other properties of the absorber [2].The measuring technique used in this work has been photoelectron spectroscopy (PES). PES produces a spectrum showing distinct peaks corresponding to electron binding energy levels for specific element subshells. Measurements with different photon energies have been performed on samples with and without post deposition treatment (PDT). A great deal of the effort has been to calculate relative element concentrations based on the PES peak intensities. Two important parameters when performing the calculations are the photoionization cross section (including the angular dependence of the cross section) and the inelastic mean free path of the photoelectrons.The results show that the GGI and the corresponding band gap will be almost the same with and without PDT except for close to the surface where PDT lowers the GGI.The calculations showed that the copper concentration is lowest at the surface. Moreover, PDT with RbF results in lower copper concentration closer to the junction.The results show a discrepancy of the GGI and CGI ratios when using the angular dependent cross sections in [10] and [11] compared to using the cross sections in [6] and [7]. / Det ökande behovet av förnybar energi gör att forskning och utveckling av solenergilösningar är av största vikt. Solceller, vilka utnyttjar den fotovoltaiska effekten, är den vanligaste tekniken för omvandling av solenergi till elektricitet. Tunnfilmssolceller är en typ av solceller vars absorbent har ett direkt bandgap, till skillnad från kisel som har ett indirekt bandgap. Fördelen med ett direkt bandgap är att det ljusabsorberande materialet kan göras mycket tunt.En vanlig tunnfilmssolcell är CIGS. Det är en komposit bestående av koppar (Cu), indium (In), gallium (Ga) och selen (Se). Ett syfte med detta självständiga arbete har varit att beräkna koncentrationerna av de ingående ämnena i halvledarskiktet av CIGS. GGI-kvoten bestämmer bandgapet, vilket är en viktig faktor för solcellens verkningsgrad. Kopparvakansen är den huvudsakliga halvledaracceptorn i CIGS. Kopparkoncentrationen har visat sig vara viktig för bl.a. solcellens verkningsgrad [2].Mättekniken som används i detta arbete kallas fotoelektronspektroskopi (PES). PES-mätningar ger ett spektrum där spektrallinjerna representerar olika nivåer av elektroners bindningsenergi för olika grundämnen. Mätningar med olika fotonenergier, på prover med och utan ytbehandling (PDT), har utförts. En stor del av arbetet har varit att beräkna relativa koncentrationer av de olika grundämnena från spektrallinjerna i spektrumet. Viktiga parametrar som man behöver ta hänsyn till i uträkningarna är sannolikheten för en fotoemissionsprocess hos fotonerna, vinkelberoendet och den fria medelväglängden hos fotoelektronerna.Resultaten visar att GGI-kvot och bandgap blir nästan detsamma med eller utan PDT, förutom närmast ytan där PDT minskar GGI-kvoten.Resultaten visar också att kopparkoncentrationen är lägst på ytan och att PDT med RbF minskar kopparkoncentrationen närmast ytan.Resultaten visar att det blir skillnader mellan GGI- och CGI-kvoterna beroende på om beräkningarna baserats på vinkelberoende träffytor enligt [10] och [11] eller baserats på träffytor enligt [6] och [7].

Ce travail de thèse porte sur l'étude et la réalisation de Lasers à Emission par la Surface à Cavité Verticale pompés électriquement (EP-VCSELs) à base d'antimoniures émettant dans le moyen-infrarouge au-delà de 2 µm. Ces VCSELs proposent des caractéristiques intéressantes pour la détection de gaz tel qu'une émission monomode et une large accordabilité sans saut de mode. L'objectif de ce travail était de développer de tels composants. La première partie de ce mémoire présente les propriétés des couches qui seront empilés pour former la structure VCSEL. La seconde partie traite des différentes conditions pour obtenir une source laser monomode. La troisième partie présente les procédés de fabrication qui ont étés mis en place. Notamment de la sous-gravure sélective de la Jonction Tunnel (JT), qui est une technique de confinement originale dans le système GaSb. Celle-ci permet de réduire le diamètre de la JT jusqu'à 6 µm, ce qui est la condition pour obtenir une émission monomode.La dernière partie de ce manuscrit présente les caractérisations menées sur les structures monolithiques à JT sous-gravées. La sous-gravure sélective nous a ainsi permis d'obtenir le premier EP-VCSEL monolithique monomode. Ce composant fonctionne au-delà de la température ambiante et en régime continu. Avec des courants de seuils aussi bas que 1,9 mA et un fonctionnement jusqu'à 70°C. Le développement des structures monolithique à zone active (ZA) en cascade a également permis d'augmenter les puissances optiques en sortie de ces composants. Celles-ci sont passées de 300 µW @ 20°C à 950 µW pour la première structure citée classique et la structure à ZA en cascades respectivement. / This thesis deals with study and conception of GaSb-based electrically pumped Vertical Cavity Surface Emitting Lasers (EP-VCSELs) emitting in the mid-infrared range above 2 µm. This VCSELs exhibits suitable characteristics for gas analysis like single-mode emission and a large current tunability without mode-hopping. The objective of this work was to develop such devices. The first part of this work is about properties of the epitaxial stack layers used to form the VCSEL structure. The second parts deal with characteristics and the confinement system to design a single mode cavity. The third part presents manufacturing process which has been set up, like Tunnel Junction (TJ) under-etching, which is an innovate approach on the GaSb system. It allows reducing TJ diameter down to 6 µm, which is a necessary point to demonstrate single-mode operation.The final part of this manuscript presents the characterisations purchased on the under-etched TJ monolithic-VCSELs. Selective under-etching of the TJ allowed the first demonstration of the first single-mode monolithic EP-VCSEL. This device emits around 2.3 µm in continuous regime above room temperature. This device exhibits threshold currents as low as 1.9 mA and operate up to 70°C. The development of bipolar cascaded VCSELs has also allowed increasing the optical power on large diameter multimode, with a maximum output power of 300 µW and 950 µW@20°C for the classic and the bipolar cascaded VCSEL respectively.

A forte polarisation (V >1V), une jonction tunnel planaire peut émettre de la lumière dans le domaine optique à des fréquences f<eV/h ~ 10¹⁴Hz. Cette émission résulte du rayonnement de plasmons-polariton de surface, générés par le bruit de grenaille dans la jonction. La densité spectrale de rayonnement dP/df est alors directement reliée à la densité spectrale des fluctuations du courant SII via une simple impédance de rayonnement: dP/df = R × SII. De la même manière, la densité spectrale de rayonnement du corps noir est reliée aux fluctuations thermiques du courant dans un conducteur ohmique via le théorème fluctuation-dissipation (TFD). Il semble alors naturel de décrire le rayonnement d'une jonction tunnel par la relation fluctuation-dissipation, dérivée par Scalapino et Rogovin [Annals of Physics 1974], généralisant le TFD aux conducteurs hors équilibre (V≠0). Nous avons étudié cette relation dans un régime où la jonction tunnel est fortement hors équilibre, lorsque eV ~1eV est de l'ordre de la hauteur de la barrière tunnel. La RFD est vérifiée à fréquence nulle (MHz), mais est violée de manière flagrante à fréquence finie (10¹⁴Hz). Nous attribuons cette violation à la non linéarité intrinsèque de la jonction. Nous dérivons une nouvelle expression pour la puissance émise, à partir de l'approche quantique de Landaueur-Büttiker du transport électronique. L'émission est alors interprétée en terme de recombinaison électron-trou dans les électrodes et rend compte d'une accumulation de charges dans la barrière. L'efficacité du couplage électron-photon est évaluée quantitativement via l'impédance de rayonnement de la jonction. Ce travail de thèse s'adresse à deux communautés, celle de la physique mésoscopique étudiant les mécanismes du transport électronique, et celle des opticiens voulant comprendre et optimiser l'émission de lumière dans ces systèmes. / In a strongly voltaged biased tunnel junction, optical photon emission occurs at frequencies below the threshold f<eV/h ~ 10¹⁴Hz, mediated by the shot-noise-generated surface plasmon-polaritons. The spectral power density dP/df depends only on the current fluctuation spectral density SII and a radiation impedance: dP/df = R × SII . This expression is analogous to the relation between the power spectral density of a black body and thermal current fluctuations in a ohmic conductor, via the fluctuation-dissipation theorem (FDT). Therefore, it seems natural that the optical power emitted by a tunnel junction be given by the fluctuation-dissipation relation (FDR) derived by Scalapino and Rogovin [Annals of Physics 1974], which extends the FDT to out-of-equilibrium conductors (V≠0). When the junction is far-from-equilibrium, i.e. when eV ~1eV is of the order of magnitude of the tunnel barrier height, our experiments show that the FDR holds at zero frequency (MHz), but breaks down at finite frequency (10¹⁴Hz). We attribute the discrepancy between the FDR and our measurements to the junction's intrinsic current-voltage non-linearity. We derive a new expression for emitted optical power, based on the Landauer-Büttiker formalism for quantum electronic transport. Light emission from the junction can then be interpreted as due to electron-hole recombination processes in the electrodes. This expression also account for charge accumulation in the tunnel barrier. The resulting estimate of the junction's radiation impedance is a measure of the electron-photon coupling e_ciency in our device. This work should be of interest to both mesoscopic physicists studying electronic transport mechanisms, and those of optics community studying light emission in microstructures.